A Hierarchically Organized Photoelectrode Architecture for Highly Efficient CdS/CdSe‐Sensitized Solar Cells

A form of photoelectrode architecture suitable for inorganic semiconductor solar cells is reported. The developed architecture consists of hierarchically organized TiO₂ nanostructures with several tens of nanometer‐sized particles that have a large surface area and open channels with several hundred‐nanometer‐gaps perpendicular to the substrate. These are tailored by controlling the kinetic energy of the ablated species during pulsed laser deposition (PLD). To fabricate the solar cells, CdS and CdSe inorganic sensitizers are assembled onto the architecture by successive ionic layer adsorption and reaction and polysulfide solution is used as an electrolyte with lead sulfide counter‐electrodes. The inorganic semiconductor solar cells using the developed architecture (PLD‐TiO₂) show high energy conversion efficiencies of 5.57% compared to a conventional mesoporous TiO₂ film(NP‐TiO₂) (3.84%) with an optical mask at 1 sun of illumination. The improved cell performance of PLD‐TiO₂ is attributed to greater light‐harvesting ability, which results in the enhancement of the J_sc value. PLD‐TiO₂ absorbs more CdS/CdSe because of its larger surface area and excellent adhesion properties with fluorine‐doped tin oxide (FTO) substrates. Additionally, due to its unique channel‐shaped architecture, PLD‐TiO₂ has a longer electron lifetime compared to NP‐TiO₂.     

Advanced Alkali Treatments for High‐Efficiency Cu(In,Ga)Se2 Solar Cells on Flexible Substrates

Flexible, lightweight Cu(In,Ga)Se₂ (CIGS) solar cells grown on polymer substrates are a promising technology with fast growing market prospects. However, power conversion efficiencies of solar cells grown at low temperatures (≈450 °C) remain below the efficiencies of cells grown at high temperature on glass substrates. This contribution discusses the impact on cell efficiency of process improvements of low‐temperature CIGS deposition on flexible polyimide and glass substrates. Different strategies for incorporation of alkali elements into CIGS are evaluated based on a large number of depositions. Postdeposition treatment with heavy alkali (here RbF) enables a thickness reduction of the CdS buffer layer and increases the open‐circuit voltage. Na supply during 3rd stage CIGS deposition positively impacts the cell performance. Coevaporation of heavy alkali (e.g., RbF) during capping layer deposition mitigates the adverse shunting associated with high Cu contents, yielding highest efficiencies with near‐stoichiometric absorber compositions. Furthermore, optimization of the deposition sequence results in absorbers with a 1 µm wide notch region with nearly constant bandgap minimum. The improved processes result in a record cell efficiency of 20.8% for CIGS on flexible substrate.     

Kinetically Controlled Growth of Phase‐Pure SnS Absorbers for Thin Film Solar Cells: Achieving Efficiency Near 3% with Long‐Term Stability Using an SnS/CdS Heterojunction

Facile control over the morphology of phase pure tin monosulfide (SnS) thin films, a promising future absorber for thin film solar cells, is enabled by controlling the growth kinetics in vapor transport deposition of congruently evaporated SnS. The pressure during growth is found to be a key factor in modifying the final shape of the SnS grains. The optimized cube‐like SnS shows p‐type with the apparent carrier concentration of ≈10¹⁷ cm^?3 with an optical bandgap of 1.32 eV. The dense and flat surface morphology of 1 µm thick SnS combined with the minimization of pinholes directly leads to improved diode quality and increased shunt resistance of the SnS/CdS heterojunction (cell area of 0.30 cm²). An open‐circuit voltage of up to 0.3068 V is achieved, which is independently characterized at the Korea Institute of Energy Research (KIER). Detailed high‐resolution transmission electron microscopy analysis confirms the absence of detrimental secondary phases such as Sn₂S₃ or SnS₂ in the SnS grains or at intergrain boundaries. The initial efficiency level of 98.5% is maintained even after six months of storage in air, and the final efficiency of the champion SnS/CdS cell, certified at the KIER, is 2.938% with an open‐circuit voltage of 0.2912 V.     

Highly Efficient Flexible Hybrid Nanocrystal‐Cu(In,Ga)Se2 (CIGS) Solar Cells

A novel scheme for hybridizing inkjet‐printed thin film Cu(In,Ga)Se₂ (CIGS) solar cells with self‐assembled clusters of nanocrystal quantum dots (NQDs), which provides a 10.9% relative enhancement of the photon conversion efficiency (PCE), is demonstrated. A non‐uniform layer of NQD aggregates is deposited between the transparent conductive oxide and a CdS/CIGS p‐n junction using low cost pulsed‐spray deposition. Hybridization significantly improves the external quantum efficiency of the hybrid devices in the absorption range of the NQDs and in the red to near‐IR parts of the spectrum. The low wavelength response enhancement is found to be induced by luminescent down‐shifting (LDS) from the NQD layer, while the increase at longer wavelengths is attributed to internal scattering from NQD aggregates. LDS is demonstrated using time‐resolved spectroscopy, and the morphology of the NQD layer is investigated in fluorescence microscopy and cross‐sectional transmission electron microscopy. The influence of the NQD dose on the PCE of the hybrid devices is investigated and an optimum value is obtained. The low costs and limited material consumptions associated with pulsed‐spray deposition make these flexible hybrid devices promising candidates to help push thin‐film photovoltaic technology towards grid parity.     

The Development of Hydrazine‐Processed Cu(In,Ga)(Se,S)2 Solar Cells

The hydrazine‐based deposition of Cu(In,Ga)(S,Se)₂ (CIGS) thin films has attracted considerable attention in recent years due to its potential for the high‐throughput production of photovoltaic devices based on this absorber material. This article provides an introduction as well as presenting a complete picture of the current status of hydrazine‐based CIGS solar‐cell fabrication, including the three major steps of this deposition process: dissolution of the precursor materials in hydrazine, deposition of a film from the resulting precursor solution, and the completion and characterization of a photovoltaic device following absorber deposition. Recent discoveries are then discussed, regarding the dissolution chemistry of the relevant precursor complexes in hydrazine, which together represent the true foundation of this processing method. Recent studies on CIGS film formation are then summarized, including the control and analysis of the crystalline phase, electronic bandgap, and film morphology. Finally, the latest progress in high‐performance device fabrication is highlighted, with a focus on optoelectronic characterization including current–voltage, junction capacitance, and minority carrier lifetime measurements. Finally, a discussion and future outlook is provided.     

Efficiency Enhancement of Organic Solar Cells Using Hydrophobic Antireflective Inverted Moth‐Eye Nanopatterned PDMS Films

Poly‐dimethylsiloxane (PDMS) films with 2D periodic inverted moth‐eye nanopatterns on one surface are implemented as antireflection (AR) layers on a glass substrate for efficient light capture in encapsulated organic solar cells (OSCs). The inverted moth‐eye nanopatterned PDMS (IMN PDMS) films are fabricated by a soft imprint lithographic method using conical subwavelength grating patterns formed by laser interference lithography/dry etching. Their optical characteristics, together with theoretical analysis using rigorous coupled‐wave analysis simulation, and wetting behaviors are investigated. For a period of 380 nm, IMN PDMS films laminated on glass substrates exhibit a hydrophobic surface with a water contact angle (θ_CA) of ≈120° and solar weighted transmittance (SWT) of ≈94.2%, both significantly higher than those (θ_CA≈ 36° and SWT ≈ 90.3%) of bare glass substrates. By employing IMN PDMS films with a period of 380 nm on glass substrates for OSCs, an enhanced power conversion efficiency (PCE) of 6.19% is obtained mainly due to the increased short‐circuit current density (J_sc) of 19.74 mA cm^‐2 compared to the OSCs with the bare glass substrates (PCE = 5.16% and J_sc = 17.25 mA cm^‐2). For the OSCs, the device stability is also studied.     

Vacuum‐Assisted Growth of Low‐Bandgap Thin Films (FA0.8MA0.2Sn0.5Pb0.5I3) for All‐Perovskite Tandem Solar Cells

All‐perovskite multijunction photovoltaics, combining a wide‐bandgap (WBG) perovskite top solar cell (E_G ≈1.6–1.8 eV) with a low‐bandgap (LBG) perovskite bottom solar cell (E_G < 1.3 eV), promise power conversion efficiencies (PCEs) >33%. While the research on WBG perovskite solar cells has advanced rapidly over the past decade, LBG perovskite solar cells lack PCE as well as stability. In this work, vacuum‐assisted growth control (VAGC) of solution‐processed LBG perovskite thin films based on mixed Sn–Pb perovskite compositions is reported. The reported perovskite thin films processed by VAGC exhibit large columnar crystals. Compared to the well‐established processing of LBG perovskites via antisolvent deposition, the VAGC approach results in a significantly enhanced charge‐carrier lifetime. The improved optoelectronic characteristics enable high‐performance LBG perovskite solar cells (1.27 eV) with PCEs up to 18.2% as well as very efficient four‐terminal all‐perovskite tandem solar cells with PCEs up to 23%. Moreover, VAGC leads to promising reproducibility and potential in the fabrication of larger active‐area solar cells up to 1 cm².     

Full‐Spectrum Liquid‐Junction Quantum Dot–Sensitized Solar Cells by Integrating Surface Plasmon–Enhanced Electrocatalysis

Full‐spectrum solar energy utilization is the ultimate goal of high‐performance photovoltaic devices. However, the present approaches to enhance sunlight harvesting in the cost‐effective quantum dot–sensitized solar cells mainly focus on the use of high‐frequency photons with the long‐wavelength sunlight being left behind. Here, a full‐spectrum solar cell architecture is proposed and the near‐infrared light–enhanced cell performance is demonstrated with a plasmonic and electrocatalytic dual‐function CuS nanostructure electrode. In the CdS/CdSe quantum dot–sensitized solar cells, an enhancement factor as high as 15% in power conversion efficiency is obtained for the device with near‐infrared part of 1‐sun light irradiating from the counter electrode side and ultraviolet–visible part incidence from the photoanode side. Electrochemical characterizations show that the enhanced electrocatalytic activity toward polysulfide reduction is attributed to the better device performance. This may be due to the plasmon‐induced photothermal effect and interfacial energy transfer from the counter electrode under the near‐infrared light, which accelerate the preceding chemical reactions for polysulfide reduction and improve the charge transfer at the electrode–electrolyte interface. This strategy provides an alternative way to achieve a full‐spectrum liquid‐junction solar cell via the integration of plasmon‐enhanced electrocatalysis into photovoltaics.     

Efficiency Enhancement of Ultra-thin CIGS Solar Cells Using Bandgap Grading and Embedding Au Plasmonic Nanoparticles

The objective of this study is to enhance the efficiency of copper indium gallium selenide (CIGS) solar cells. To accomplish that, composition grading of absorber layer was carried out by using SILVACO’s technology aided computer design (TCAD) ATLAS program. Results showed a meaningful improvement of output parameters including open-circuit voltage (V_oc), short-circuit current (I_sc), fill factor (FF), and power conversion efficiency (η). For further performance improvement of the cell, Au plasmonic scattering nanoparticles were loaded on the top of the ZnO window layer. Plasmonic nanoparticles can restrict, absorb, navigate, or scatter the incident light. By using the spherical Au nanoparticles, a very good increase in the light absorption in the cell over the reference planar CIGS solar cell was observed. The highest η = 19.01% was achieved for the designed ultra-thin bandgap-graded CIGS solar cell decorated by Au nanoparticles.

     

Electrochemical Design of Nanostructured ZnO Charge Carrier Layers for Efficient Solid‐State Perovskite‐Sensitized Solar Cells

The preparation of ZnO structured films designed to act as electron transport layers in efficient ZnO/perovskite CH₃NH₃PbI₃/spirobifluorene (spiro‐OMeTAD) solid‐state solar cells by electrochemical deposition is reported. Well‐conducting ZnO layers are deposited in chloride medium and grown with tailored (nano)structures ranging from arrays of nanowires to a compact, well‐covering film. Moreover, the effect of a thin intermediate overlayer of ZnO conformally electrodeposited in nitrate medium and with a low n‐type doping (i‐ZnO) is discussed. The results show higher power conversion efficiencies for the nanostructured oxide layers compared to the dense one. Moreover, the presence of the i‐ZnO layer is shown to markedly improve the cell short‐circuit current and the open‐circuit voltage due to charge recombination reduction. For the best cells, the active layers efficiently absorb light over a large spectral range from near‐UV to near infrared region and exhibit excellent charge collection efficiencies. Solar cells based on an optimized design generate a very large photocurrent and the power conversion efficiency at one sun is as high as 10.28%.     

Oxygenated CdS Buffer Layers Enabling High Open‐Circuit Voltages in Earth‐Abundant Cu2BaSnS4 Thin‐Film Solar Cells

Earth‐abundant Cu₂BaSnS₄ (CBTS) thin films exhibit a wide bandgap of 2.04–2.07 eV, a high absorption coefficient > 10⁴ cm^?1, and a p‐type conductivity, suitable as a top‐cell absorber in tandem solar cell devices. In this work, sputtered oxygenated CdS (CdS:O) buffer layers are demonstrated to create a good p–n diode with CBTS and enable high open‐circuit voltages of 0.9–1.1 V by minimizing interface recombination. The best power conversion efficiency of 2.03% is reached under AM 1.5G illumination based on the configuration of fluorine‐doped SnO₂ (back contact)/CBTS/CdS:O/CdS/ZnO/aluminum‐doped ZnO (front contact).     

A Delaminated Defect‐Rich ZrO2 Hierarchical Nanowire Photocathode for Efficient Photoelectrochemical Hydrogen Evolution

An efficient way to combat the energy crisis and the greenhouse gas effect of fossil fuels is the production of hydrogen fuel from solar‐driven water splitting reaction. Here, this study presents a p‐type ZrO₂ nanoplate‐decorated ZrO₂ nanowire photocathode with a high photoconversion efficiency that makes it potentially viable for commercial solar H₂ production. The composition of oxygen vacancy defects, low charge carrier transport property, and high specific surface area of these as‐grown hierarchical nanowires are further improved by an hydrofluoric acid (HF) treatment, which causes partial delamination and produces a thin amorphous ZrO₂ layer on the surface of the as‐grown nanostructured film. The presence of different types of oxygen vacancies (neutral, singly charged, and doubly charged defects) and their compositional correlation to the Zr^x+ oxidation states (4 > x > 2) are found to affect the charge transfer process, the p‐type conductivity, and the photocatalytic activity of the ZrO₂ nanostructured film. The resulting photocathode provides the highest overall photocurrent (?42.3 mA cm^?2 at 0 V vs reversible hydrogen electrode (RHE)) among all the photocathodes reported to date, and an outstanding 3.1% half‐cell solar‐to‐hydrogen conversion efficiency with a Faradaic efficiency of 97.8%. Even more remarkable is that the majority of the photocurrent (69%) is produced in the visible light region.     

Si‐Doped Cu(In,Ga)Se2 Photovoltaic Devices with Energy Conversion Efficiencies Exceeding 16.5% without a Buffer Layer

In this communication, novel and simplified structure Cu(In,Ga)Se₂ (CIGS) solar cells, which nominally consist of only a CIGS photoabsorber layer sandwiched between back and front contact layers but yet demonstrate high photovoltaic efficiencies, are reported. To realize this accomplishment, Si‐doped CIGS films grown by the three‐stage coevaporation method, B‐doped ZnO transparent conductive oxide front contact layers deposited by chemical vapor deposition, and heat–light soaking treatments are used. Si‐doping of CIGS films is found to modify the film surfaces and grain boundary properties and also affect the alkali metal distribution profiles in CIGS films. These effects are expected to contribute to improvements in buffer‐free CIGS device performance. Heat–light soaking treatments, which are occasionally performed to improve conventional buffer‐based CIGS device performance, are found to be also effective in enhancing buffer‐free CIGS photovoltaic efficiencies. This result suggests that the mechanism behind the beneficial effects of heat–light soaking treatments originates from CIGS bulk issues and is independent of the buffer materials. Consequently, over 16.5% efficiencies, including an independently certified value, are demonstrated from completely buffer‐free CIGS photovoltaic devices.     

Relation of Nanostructure and Recombination Dynamics in a Low‐Temperature Solution‐Processed CuInS2 Nanocrystalline Solar Cell

The understanding and control of nanostructures with regard to transport and recombination mechanisms is of key importance in the optimization of the power conversion efficiency (PCE) of solar cells based on inorganic nanocrystals. Here, the transport properties of solution‐processed solar cells are investigated using photo‐CELIV (photogenerated charge carrier extraction by linearly increasing voltage) and transient photovoltage techniques; the solar cells are prepared by an in‐situ formation of CuInS₂ nanocrystals (CIS NCs) at the low temperature of 270 °C. Structural and morphological analyses reveal the presence of a metastable CuIn₅S₈ phase and a disordered morphology in the CuInS₂ nanocrytalline films consisting of polycrystalline grains at the nanoscale range. Consistent with the disordered morphology of the CIS NC thin films, the CIS NC devices are characterized by a low carrier mobility. The carrier density dynamic indicates that the recombination kinetics in these devices follows the dispersive bimolecular recombination model and does not fully behave in a diffusion‐controlled manner, as expected by Langevin‐type recombination. The mobility–lifetime product of the charge carriers properly explains the performance of the thin (200 nm) CIS NC solar cell with a high fill‐factor of 64% and a PCE of over 3.5%.     

Binary Indium–Zinc Oxide Photoanodes for Efficient Dye‐Sensitized Solar Cells

The benefits of incorporating binary metal‐oxide electrodes en route toward efficient dye‐sensitized solar cells (DSSCs) have recently emerged. The current work aims at realizing efficient indium‐doped zinc oxide based DSSCs by means of enhancing charge transport processes and reducing recombination rates. Electrochemical impedance spectroscopic assays corroborate that low amounts of indium reduce charge transport resistances and increase electron recombination resistances. The latter are in concert with a remarkable enhancement of the charge collection efficiency from 33% to 83% for devices with ZnO and In₁₅Zn₈₅O photoanodes, respectively. Going beyond 15 mol% of indium, an effective electron trapping increases the charge transport resistance and, in turn, dramatically reduces charge collection efficiency. Upon implementing In₁₅Zn₈₅O into an electron cascade photoanode architecture featuring an In₁₅Zn₈₅O bottom layer and a ZnO top layer, a device efficiency of 5.77% and a significantly high current density of 20.4 mA cm^?2 in binary ZnO DSSCs are achieved.     

Nanowire‐Based Three‐Dimensional Transparent Conducting Oxide Electrodes for Extremely Fast Charge Collection

A 3D transparent conducting oxide (3D‐TCO) has been fabricated by growing Sn‐doped indium oxide (ITO) nanowire arrays on glass substrates via a vapor transport method. The 3D TCO charge‐collection properties have been compared to those of conventional two‐dimensional TCO (2D‐TCO) thin films. For use as a photoelectrode in dye‐sensitized solar cells, ITO‐TiO₂ core‐shell nanowire arrays were prepared by depositing a 45 nm‐thick mesoporous TiO₂ shell layer consisting of ～6 nm anatase nanoparticles using TiCl₄ treatments. Dye‐sensitized solar cells fabricated using these ITO‐TiO₂ core‐shell nanowire arrays show extremely fast charge collection owing to the shorter electron paths across the 45 nm‐thick TiO₂ shell compared to the 2D TCO. Interestingly, the charge‐collection time does not increase with the overall electrode thickness, which is counterintuitive to conventional diffusion models. This result implies that, in principle, maximum light harvesting can be achieved without hindering the charge collection. The proposed new 3D TCO should also be attractive for other photovoltaic applications where the active layer thickness is limited by poor charge collection.     

Three‐Dimensional Nanostructured Indium‐Tin‐Oxide Electrodes for Enhanced Performance of Bulk Heterojunction Organic Solar Cells

A three‐dimensional indium tin oxide (ITO) nanohelix (NH) array is presented as a multifunctional electrode for bulk heterojunction organic solar cells for simultaneously improving light absorption and charge transport from the active region to the anode. It is shown that the ITO NH array, which is easily fabricated using an oblique‐angle‐deposition technique, acts as an effective antireflection coating as well as a light‐scattering layer, resulting in much enhanced light harvesting. Furthermore, the larger interfacial area between the electrode and the active layer, together with the enhanced carrier mobility through highly conductive ITO NH facilitate transport and collection of charge carriers. The optical and electrical improvements enabled by the ITO NH electrode result in a 10% increase in short‐circuit current density and power‐conversion efficiency of the solar cells.     

The Physics of Small Molecule Acceptors for Efficient and Stable Bulk Heterojunction Solar Cells

Organic bulk heterojunction solar cells based on small molecule acceptors have recently seen a rapid rise in the power conversion efficiency with values exceeding 13%. This impressive achievement has been obtained by simultaneous reduction of voltage and charge recombination losses within this class of materials as compared to fullerene‐based solar cells. In this contribution, the authors review the current understanding of the relevant photophysical processes in highly efficient nonfullerene acceptor (NFA) small molecules. Charge generation, recombination, and charge transport is discussed in comparison to fullerene‐based composites. Finally, the authors review the superior light and thermal stability of nonfullerene small molecule acceptor based solar cells, and highlight the importance of NFA‐based composites that enable devices without early performance loss, thus resembling so‐called burn‐in free devices.     

(040)‐Crystal Facet Engineering of BiVO4 Plate Photoanodes for Solar Fuel Production

A (040)‐crystal facet engineered BiVO₄ ((040)‐BVO) photoanode is investigated for solar fuel production. The (040)‐BVO photoanode is favorable for improved charge carrier mobility and high photocatalytic active sites for solar light energy conversion. This crystal facet design of the (040)‐BVO photoanode leads to an increase in the energy conversion efficiency for solar fuel production and an enhancement of the oxygen evolution rate. The photocurrent density of the (040)‐BVO photoanode is determined to be 0.94 mA cm^?2 under AM 1.5 G illumination and produces 42.1% of the absorbed photon‐to‐current conversion efficiency at 1.23 V (vs RHE, reversible hydrogen electrode). The enhanced charge separation efficiency and improved charge injection efficiency driven by (040) facet can produce hydrogen with 0.02 mmol h^?1 at 1.23 V. The correlation between the (040)‐BVO photoanode and the solar fuel production is investigated. The results provide a promising approach for the development of solar fuel production using a BiVO₄ photoanode.     

High‐Surface‐Area Porous Platinum Electrodes for Enhanced Charge Transfer

Cobalt‐based electrolytes are highly tunable and have pushed the limits of dye‐sensitized solar cells, enabling higher open‐circuit voltages and new record efficiencies. However, the performance of these electrolytes and a range of other electrolytes suffer from slow electron transfer at platinum counter electrodes. High surface area platinum would enhance catalysis, but pure platinum structures are too expensive in practice. Here, a material‐efficient host‐guest architecture is developed that uses an ultrathin layer of platinum deposited upon an electrically conductive scaffold, niobium‐doped tin oxide (NTO). This nanostructured composite enhances the counter electrode performance of dye‐sensitized solar cells (DSCs) using a Co^(II/III)BPY₃ electrolyte with an increased fill factor and power conversion efficiency (11.26%), compared to analogous flat films. The modular strategy is elaborated by integrating a light scattering layer onto the counter electrode to reflect unabsorbed light back to the photoanode to improve the short‐circuit current density and power conversion efficiency.