A Low Resistance Calcium/Reduced Titania Passivated Contact for High Efficiency Crystalline Silicon Solar Cells

Recent advances in the efficiency of crystalline silicon (c‐Si) solar cells have come through the implementation of passivated contacts that simultaneously reduce recombination and resistive losses within the contact structure. In this contribution, low resistivity passivated contacts are demonstrated based on reduced titania (TiO_x) contacted with the low work function metal, calcium (Ca). By using Ca as the overlying metal in the contact structure we are able to achieve a reduction in the contact resistivity of TiO_x passivated contacts of up to two orders of magnitude compared to previously reported data on Al/TiO_x contacts, allowing for the application of the Ca/TiO_x contact to n‐type c‐Si solar cells with partial rear contacts. Implementing this contact structure on the cell level results in a power conversion efficiency of 21.8% where the Ca/TiO_x contact comprises only ≈6% of the rear surface of the solar cell, an increase of 1.5% absolute compared to a similar device fabricated without the TiO_x interlayer.     

High Open-Circuit Voltage (1.197 V) in Large-Area (1 cm2) Inverted Perovskite Solar Cell via Interface Planarization and Highly Polar Self-Assembled Monolayer

The efficiency loss caused by area scaling is one of the key factors hindering the industrial development of perovskite solar cells. The energy loss and contact issues in the buried interface are the main reasons. Here, a new self-assembled monolayer (SAM), Ph-4PACz, with a large dipole moment (2.32 D) is obtained . It is found that Ph-4PACz with high polarity can improve the band alignment and minimize the energy loss , resulting in an open-circuit voltage (V_oc) as high as 1.2 V for 1.55 eV perovskite. However, when applied to large-area devices, the fill factor (FF) still suffered from significant attenuation. Therefore, alumina nanoparticles (Al₂O₃-NPs) are introduced to the interface between Ph-4PACz and rough FTO substrate to further improve the flatness , resulting in a conformal perovskite film with almost no voids in the buried interface, thus promoting low exciton binding energy, fast hot-carrier extraction and low non-radiative recombination. The final devices achieved a small-area power conversion efficiency (PCE) of 25.60% and a large-area (1 cm²) PCE of 24.61% (certified at 24.48%), which represents one of the highest PCE for single device ≥ 1 cm² area. Additionally, mini-modules and stability testing are also carried out to demonstrate the feasibility of commercialization.     

Doping‐Free Asymmetrical Silicon Heterocontact Achieved by Integrating Conjugated Molecules for High Efficient Solar Cell

Organic conjugated molecule/silicon (Si) heterojunction has been widely investigated to build up an asymmetrical heterocontact for efficient photovoltaics. However, it is still unclear how the organic molecular structures can affect their electronic coupling interaction with Si. Here, two widely explored electron acceptors of poly{[N,N′‐bis(2‐octyldodecyl)‐naphthalene‐1,4,5,8‐bis(dicarboximide)‐2,6‐diyl]‐alt‐5,5′‐(2,2′‐bithiophene)} (N2200) and [6,6]‐phenyl‐C₆₁‐butyric acid methyl ester (PCBM) are used to build up asymmetrical Si heterocontact to investigate their electronic coupling interaction. It is found that PCBM displays different electronic coupling with Si from N2200, which is ascribed to their various physical distance with Si based on a systematic and detailed density functional theory calculation. Organic layer incorporation not only suppresses the surface charge recombination velocity but also leads to an Ohmic contact between Si and Al. Therefore, a doping‐free organic/Si heterojunction photovoltaic with a power conversion efficiency of 14.9% is achieved with PCBM layer. This work discloses a key factor affecting organic/Si electronic coupling interaction, which helps build up high quality Si heterocontact for solar cells and other optoelectronic devices. Furthermore, the simplified heterocontact achieved by a low temperature, solution processed, and lithography‐free steps has a dramatic improvement on conventional diffusion doped‐silicon one at high temperature.     

Disorder‐Induced Open‐Circuit Voltage Losses in Organic Solar Cells During Photoinduced Burn‐In

The photoinduced open‐circuit voltage (V_oc) loss commonly observed in bulk heterojunction organic solar cells made from amorphous polymers is investigated. It is observed that the total charge carrier density and, importantly, the recombination dynamics are unchanged by photoinduced burn‐in. Charge extraction is used to monitor changes in the density of states (DOS) during degradation of the solar cells, and a broadening over time is observed. It is proposed that the V_oc losses observed during burn‐in are caused by a redistribution of charge carriers in a broader DOS. The temperature and light intensity dependence of the V_oc losses can be described with an analytical model that contains the amount of disorder broadening in a Gaussian DOS as the only fit parameter. Finally, the V_oc loss in solar cells made from amorphous and crystalline polymers is compared and an increased stability observed in crystalline polymer solar cells is investigated. It is found that solar cells made from crystalline materials have a considerably higher charge carrier density than those with amorphous materials. The effects of a DOS broadening upon aging are suppressed in solar cells with crystalline materials due to their higher carrier density, making crystalline materials more stable against V_oc losses during burn‐in.     

Lithium Fluoride Based Electron Contacts for High Efficiency n‐Type Crystalline Silicon Solar Cells

Low‐resistance contact to lightly doped n‐type crystalline silicon (c‐Si) has long been recognized as technologically challenging due to the pervasive Fermi‐level pinning effect. This has hindered the development of certain devices such as n‐type c‐Si solar cells made with partial rear contacts (PRC) directly to the lowly doped c‐Si wafer. Here, a simple and robust process is demonstrated for achieving mΩ cm² scale contact resistivities on lightly doped n‐type c‐Si via a lithium fluoride/aluminum contact. The realization of this low‐resistance contact enables the fabrication of a first‐of‐its‐kind high‐efficiency n‐type PRC solar cell. The electron contact of this cell is made to less than 1% of the rear surface area, reducing the impact of contact recombination and optical losses, permitting a power conversion efficiency of greater than 20% in the initial proof‐of‐concept stage. The implementation of the LiF_x/Al contact mitigates the need for the costly high‐temperature phosphorus diffusion, typically implemented in such a cell design to nullify the issue of Fermi level pinning at the electron contact. The timing of this demonstration is significant, given the ongoing transition from p‐type to n‐type c‐Si solar cell architectures, together with the increased adoption of advanced PRC device structures within the c‐Si photovoltaic industry.     

Dopant‐Free Partial Rear Contacts Enabling 23% Silicon Solar Cells

Over the past five years, there has been a significant increase in both the intensity of research and the performance of crystalline silicon devices which utilize metal compounds to form carrier‐selective heterocontacts. Such heterocontacts are less fundamentally limited and have the potential for lower costs compared to the current industry dominating heavily doped, directly metalized contacts. A low temperature (≤230 °C), TiO_x/LiF_x/Al electron heterocontact is presented here, which achieves mΩcm² scale contact resistivities ρ_c on lowly doped n‐type substrates. As an extreme demonstration of the potential of this heterocontact, it is trialed in a newly developed, high efficiency n‐type solar cell architecture as a partial rear contact (PRC). Despite only contacting ≈1% of the rear surface area, an efficiency of greater than 23% is achieved, setting a new benchmark for n‐type solar cells featuring undoped PRCs and confirming the unusually low ρ_c of the TiO_x/LiF_x/Al contact. Finally, in contrast to previous versions of the n‐type undoped PRC cell, the performance of this cell is maintained after annealing at 350–400 °C, suggesting its compatibility with conventional surface passivation activation and sintering steps.     

Overcoming Electrode‐Induced Losses in Organic Solar Cells by Tailoring a Quasi‐Ohmic Contact to Fullerenes via Solution‐Processed Alkali Hydroxide Layers

It is shown that the performance of inverted organic solar cells can be significantly improved by facilitating the formation of a quasi‐ohmic contact via solution‐processed alkali hydroxide (AOH) interlayers on top of n‐type metal oxide (aluminum zinc oxide, AZO, and zinc oxide, ZnO) layers. AOHs significantly reduce the work function of metal oxides, and are further proven to effectively passivate defect states in these metal oxides. The interfacial energetics of these electron collecting contacts with a prototypical electron acceptor (C₆₀) are investigated to reveal the presence of a large interface dipole and a new interface state between the Fermi energy and the C₆₀ highest occupied molecular orbital for AOH‐modified AZO contacts. These novel interfacial gap states are a result of ground‐state electron transfer from the metal hydroxide‐functionalized AZO contact to the adsorbed molecules, which are hypothesized to be electronically hybridized with the contact. These interface states tail all the way to the Fermi energy, providing for a highly n‐doped (metal‐like) interfacial molecular layer. Furthermore, the strong “light‐soaking” effect is no longer observed in devices with a AOH interface.     

Tantalum Nitride Electron‐Selective Contact for Crystalline Silicon Solar Cells

Minimizing carrier recombination at contact regions by using carrier‐selective contact materials, instead of heavily doping the silicon, has attracted considerable attention for high‐efficiency, low‐cost crystalline silicon (c‐Si) solar cells. A novel electron‐selective, passivating contact for c‐Si solar cells is presented. Tantalum nitride (TaN _x ) thin films deposited by atomic layer deposition are demonstrated to provide excellent electron‐transporting and hole‐blocking properties to the silicon surface, due to their small conduction band offset and large valence band offset. Thin TaN_x interlayers provide moderate passivation of the silicon surfaces while simultaneously allowing a low contact resistivity to n‐type silicon. A power conversion efficiency (PCE) of over 20% is demonstrated with c‐Si solar cells featuring a simple full‐area electron‐selective TaN_x contact, which significantly improves the fill factor and the open circuit voltage (V_oc) and hence provides the higher PCE. The work opens up the possibility of using metal nitrides, instead of metal oxides, as carrier‐selective contacts or electron transport layers for photovoltaic devices.     

Conductive and Stable Magnesium Oxide Electron‐Selective Contacts for Efficient Silicon Solar Cells

A high Schottky barrier (>0.65 eV) for electrons is typically found on lightly doped n‐type crystalline (c‐Si) wafers for a variety of contact metals. This behavior is commonly attributed to the Fermi‐level pinning effect and has hindered the development of n‐type c‐Si solar cells, while its p‐type counterparts have been commercialized for several decades, typically utilizing aluminium alloys in full‐area, and more recently, partial‐area rear contact configurations. Here the authors demonstrate a highly conductive and thermally stable electrode composed of a magnesium oxide/aluminium (MgO_x/Al) contact, achieving moderately low resistivity Ohmic contacts on lightly doped n‐type c‐Si. The electrode, functionalized with nanoscale MgO_x films, significantly enhances the performance of n‐type c‐Si solar cells to a power conversion efficiency of 20%, advancing n‐type c‐Si solar cells with full‐area dopant‐free rear contacts to a point of competitiveness with the standard p‐type architecture. The low thermal budget of the cathode formation, its dopant‐free nature, and the simplicity of the device structure enabled by the MgO_x/Al contact open up new possibilities in designing and fabricating low‐cost optoelectronic devices, including solar cells, thin film transistors, or light emitting diodes.     

Donor‐Acceptor Interfacial Interactions Dominate Device Performance in Hybrid P3HT‐ZnO Nanowire‐Array Solar Cells

The adsorption of self‐assembled monolayers (SAMs) on metal oxide surfaces is a promising route to control electronic characteristics and surface wettability. Here, arylphosphonic acid derivatives are used to modulate the surface properties of vertically oriented ZnO nanowire arrays. Arylphosphonate‐functionalized ZnO nanowires are incorporated into hybrid organic‐inorganic solar cells in which infiltrated poly(3‐hexylthiophene) (P3HT) serves as the polymer donor. Strong correlations between device short‐circuit current density (J _sc) and power conversion efficiencies (PCEs) with ZnO surface functionalization species are observed and a weak correlation in the open‐circuit voltage (V _oc) is observed. Inverted solar cells fabricated with these treated interfaces exhibit PCEs as high as 2.1%, primarily due to improvements in J _sc. Analogous devices using untreated ZnO arrays having efficiencies of 1.6%. The enhancement in J _sc is attributed to surface passivation of ZnO by SAMs and enhanced wettability from P3HT, which improve charge transfer and reduce carrier recombination at the organic‐inorganic interface in the solar cells.     

Interfaces in Perovskite Solar Cells

Rapid improvement in photoconversion efficiency (PCE) of solution processable organometallic hybrid halide based perovskite solar cells (PSCs) have taken the photovoltaic (PV) community with a surprise and has extended their application in other electronic devices such as light emitting diodes, photo detectors and batteries. Together with efforts to push the PCE of PSCs to record values >22% – now at par with that of crystalline silicon solar cells – origin of their PV action and underlying physical processes are also deeply investigated worldwide in diverse device configurations. A typical PSC consists of a perovskite film sandwiched between an electron and a hole selective contact thereby creating ESC/perovskite and perovskite/HSC interfaces, respectively. The selective contacts and their interfaces determine properties of perovskite layer and also control the performance, origin of PV action, open circuit voltage, device stability, and hysteresis in PSCs. Herein, we define ideal charge selective contacts, and provide an overview on how the choice of interfacing materials impacts charge accumulation, transport, transfer/recombination, band‐alignment, and electrical stability in PSCs. We then discuss device related considerations such as morphology of the selective contacts (planar or mesoporous), energetics and electrical properties (insulating and conducting), and its chemical properties (organic vs inorganic). Finally, the outlook highlights key challenges and future directions for a commercially viable perovskite based PV technology.     

High‐Efficiency Low‐Temperature ZnO Based Perovskite Solar Cells Based on Highly Polar,Nonwetting Self‐Assembled Molecular Layers

Herein, this study reports high‐efficiency, low‐temperature ZnO based planar perovskite solar cells (PSCs) with state‐of‐the‐art performance. They are achieved via a strategy that combines dual‐functional self‐assembled monolayer (SAM) modification of ZnO electron accepting layers (EALs) with sequential deposition of perovskite active layers. The SAMs, constructed from newly synthesized molecules with high dipole moments, act both as excellent surface wetting control layers and as electric dipole layers for ZnO‐EALs. The insertion of SAMs improves the quality of PbI₂ layers and final perovskite layers during sequential deposition, while charge extraction is enhanced via electric dipole effects. Leveraged by SAM modification, our low‐temperature ZnO based PSCs achieve an unprecedentedly high power conversion efficiency of 18.82% with a V_OC of 1.13 V, a J_SC of 21.72 mA cm^?2, and a FF of 0.76. The strategy used in this study can be further developed to produce additional performance enhancements or fabrication temperature reductions.     

Doping‐Induced Screening of the Built‐in‐Field in Organic Solar Cells: Effect on Charge Transport and Recombination

We report on the effects of screening of the electric field by doping‐induced mobile charges on photocurrent collection in operational organic solar cells. Charge transport and recombination were studied using double injection (DI) and charge extraction by linearly increasing voltage (CELIV) transient techniques in bulk‐heterojunction solar cells made from acceptor‐donor blends of poly(3‐n‐hexylthiophene):phenyl‐C61‐butyric acid methyl ester (P3HT:PC60BM). It is shown that the screening of the built‐in field in operational solar cells can be controlled by an external voltage while the influence on charge transport and recombination is measured. An analytical theory to extract the bimolecular recombination coefficient as a function of electric field from the injection current is also reported. The results demonstrate that the suppressed (non‐Langevin) bimolecular recombination rate and charge collection are not strongly affected by native doping levels in this materials combination. Hence, it is not necessary to reduce the level of doping further to improve the device performance of P3HT‐based solar cells.     

Light-Harvesting Properties of Embedded Tin Oxide Nanoparticles for Partial Rear Contact Silicon Solar Cells

In this paper, a novel method of preparation and systematic study of application of low-loss tin oxide (SnO₂) nanospheres located at the rear side of crystalline silicon solar cells having partial rear contact have been presented. The improvement in efficiency due to light harvesting through optical scattering of tin oxide nanospheres is significant for thin silicon solar cells. Finite-difference time-domain (FDTD) simulations reveal that embedding of the rear-located nanospheres is necessary for back scattering of light from the rear surface. An analytical electrical model has been developed utilizing the results of optical simulations to estimate the solar cell parameters and efficiency enhancement of solar cells. The model shows that an absolute efficiency enhancement of ～19% can be achieved for 16% efficient 10-μm thin silicon solar cell with partial rear contact. The enhancement is lower (～6%) for thicker (180 μm) partial rear contact cells. Experimentally, SnO₂ nanospheres have been synthesized and applied at the rear side of partial rear contact solar cell as a proof of experiment to validate the potential of this approach. A relative enhancement of short-circuit current by 2.3% and open-circuit voltage by 2.5% has been achieved experimentally for 180-μm silicon solar cells leading to 5.2% higher efficiency with respect to baseline efficiency validating this concept.     

Corrugation Architecture Enabled Ultraflexible Wafer‐Scale High‐Efficiency Monocrystalline Silicon Solar Cell

Advanced classes of modern application require new generation of versatile solar cells showcasing extreme mechanical resilience, large‐scale, low cost, and excellent power conversion efficiency. Conventional crystalline silicon‐based solar cells offer one of the most highly efficient power sources, but a key challenge remains to attain mechanical resilience while preserving electrical performance. A complementary metal oxide semiconductor‐based integration strategy where corrugation architecture enables ultraflexible and low‐cost solar cell modules from bulk monocrystalline large‐scale (127 × 127 cm²) silicon solar wafers with a 17% power conversion efficiency. This periodic corrugated array benefits from an interchangeable solar cell segmentation scheme which preserves the active silicon thickness of 240 µm and achieves flexibility via interdigitated back contacts. These cells can reversibly withstand high mechanical stress and can be deformed to zigzag and bifacial modules. These corrugation silicon‐based solar cells offer ultraflexibility with high stability over 1000 bending cycles including convex and concave bending to broaden the application spectrum. Finally, the smallest bending radius of curvature lower than 140 µm of the back contacts is shown that carries the solar cells segments.     

Nongeminate Recombination in Planar and Bulk Heterojunction Organic Solar Cells

Nongeminate recombination in organic solar cells based on copper phthalocyanine (CuPc) and C₆₀ is investigated. Two device architectures, the planar heterojunction (PHJ) and the bulk heterojunction (BHJ), are directly compared in view of differences in charge carrier decay dynamics. A combination of transient photovoltage (TPV) experiments, yielding the small perturbation charge carrier lifetime, and charge extraction measurements, providing the charge carrier density is applied. In organic solar cells, charge photogeneration and recombination primarily occur at the donor–acceptor heterointerface. Whereas the BHJ can often be approximated by an effective medium due to rather small scale phase separation, the PHJ has a well defined two‐dimensional heterointerface. In order to study nongeminate recombination dynamics in PHJ devices the charge accumulation at this interface is most relavent. As only the spatially averaged carrier concentration can be determined from extraction techniques, the charge carrier density at the interface n_int is derived from the open circuit voltage. Comparing the experimental results with macroscopic device simulation, the differences of recombination and charge carrier densities in CuPc:C₆₀ PHJ and BHJ devices are discussed with respect to the device performance. The open circuit voltage of BHJ is larger than for PHJ at low light intensities, but at 0.3 sun the situation is reversed: here, the PHJ can finally take advantage of its generally longer charge carrier lifetimes, as the active recombination region is smaller.     

Interfacial Modification Using Hydrogenated TiO2 Electron‐Selective Layers for High‐Efficiency and Light‐Soaking‐Free Organic Solar Cells

Optimizing the interfacial contacts between the photoactive layer and the electrodes is an important factor in determining the performance of organic solar cells (OSCs). A charge‐selective layer with tailored electrical properties enhances the charge collection efficiency and interfacial stability. Here, the potential of hydrogenated TiO₂ nanoparticles (H‐TiO₂ NPs) as an efficient electron‐selective layer (ESL) material in OSCs is reported for the first time. The H‐TiO₂ is synthesized by discharge plasma in liquid at atmospheric pressure, which has the benefits of a simple one‐pot synthesis process, rapid and mild reaction conditions, and the capacity for mass production. The H‐TiO₂ exhibits high conductivity and favorable energy level formation for efficient electron extraction, providing a basis for an efficient bilayer ESL system composed of conjugated polyelectrolyte/H‐TiO₂. Thus, the enhanced charge transport and extraction efficiency with reduced recombination losses at the cathode interfacial contacts is achieved. Moreover, the OSCs composed of H‐TiO₂ are almost free of light soaking, which has been reported to severely limit the performance and stability of OSCs based on conventional TiO₂ ESLs. Therefore, H‐TiO₂ as a new efficient, stable, and cost‐effective ESL material has the potential to open new opportunities for optoelectronic devices.     

The Role of Charge Selective Contacts in Perovskite Solar Cell Stability

Lead halide perovskite solar cells have rapidly achieved high efficiencies comparable to established commercial photovoltaic technologies. The main focus of the field is now shifting toward improving the device lifetime. Many efforts have been made to increase the stability of the perovskite compound and charge‐selective contacts. The electron and hole selective contacts are responsible for the transport of photogenerated charges out of the solar cell and are in intimate contact with the perovskite absorber. Besides the intrinsic stability of the selective contacts themselves, the interfaces at perovskite/selective contact and metal/selective contact play an important role in determining the overall operational lifetime of perovskite solar cells. This review discusses the impact of external factors, i.e., heat, UV‐light, oxygen, and moisture, and measured conditions, i.e., applied bias on the overall stability of perovskite solar cells (PSCs). The authors summarize and analyze the reported strategies, i.e., material engineering of selective contacts and interface engineering via the introduction of interlayers in the aim of enhancing the device stability of PSCs at elevated temperatures, high humidity, and UV irradiation. Finally, an outlook is provided with an emphasis on inorganic contacts that is believed to be the key to achieving highly stable PSCs.     

Nitrile‐Substituted QA Derivatives: New Acceptor Materials for Solution‐Processable Organic Bulk Heterojunction Solar Cells

The development of non‐fullerene‐based electron acceptors (especially organic molecules with sufficient absorption property within the solar spectrum region) for bulk‐heterojunction (BHJ) organic solar cells (OSCs) is an important issue for the achievement of high photoconversion efficiency. In this contribution, a new class of organic acceptors di‐cyan substituted quinacridone derivatives (DCN‐nCQA, n = 4, 6 and 8) for BHJ solar cells was designed and synthesized. DCN‐nCQA molecules possess facile synthesis, solution processability, visible and near‐IR light absorption and relatively stable characteristics. The DCN‐8CQA molecule exhibited a proper LUMO energy level (–4.1 eV), small bandgap (1.8 eV) and moderate electron mobility (10^?4 cm² V^?1 S^?1), suggesting that this molecule is an ideal acceptor material for the classical donor material regio‐regular poly (3‐hexylthiophene) (P3HT). A photovoltaic device with a structure of [ITO/PEDOT:PSS/P3HT:DCN‐8CQA/LiF/Al] displayed a power conversion efficiency of 1.57% and a fill factor of 57% under 100 mW cm^?2 AM 1.5G simulated solar illumination. The DCN‐nCQA molecules showed remarkable absorption in the region from 650 to 700 nm, where P3HT has a weak absorption promoting overlap with the solar spectrum and potentially improving the performance of the solar cell.     

Morphology and Efficiency: The Case of Polymer/ZnO Solar Cells

The performance of polymer solar cells critically depends on the morphology of the interface between the donor‐ and acceptor materials that are used to create and transport charge carriers. Solar cells based on poly(3‐hexylthiophene) and ZnO were fully characterized in terms of their efficiency and three‐dimensional (3D) morphology on the nanoscale. Here, we establish a quantitative link between efficiency and morphology by using the experimental 3D morphology as direct input for a 3D optoelectronic device model. This model includes the effects of exciton diffusion and quenching; space‐charge; recombination, generation, drift and diffusion of charge carriers; and the injection/extraction of carriers at the contacts. The observed trend in internal quantum efficiency as a function of layer thickness is reproduced with a single set of parameters. Several morphological aspects that determine the internal quantum efficiency are discussed and compared to other organic solar cells. This first direct use of morphological data in an optoelectronic device model highlights the importance of morphology in solar cells.