A Novel Anion Doping for Stable CsPbI2Br Perovskite Solar Cells with an Efficiency of 15.56% and an Open Circuit Voltage of 1.30 V

The Cs‐based inorganic perovskite solar cells (PSCs), such as CsPbI₂Br, have made a striking breakthrough with power conversion efficiency (PCE) over 16% and potential to be used as top cells for tandem devices. Herein, I^? is partially replaced with the acetate anion (Ac^?) in the CsPbI₂Br framework, producing multiple benefits. The Ac^? doping can change the morphology, electronic properties, and band structure of the host CsPbI₂Br film. The obtained CsPbI_2?x Br(Ac)_x perovskite films present lower trap densities, longer carrier lifetimes, and fast charge transportation compared to the host CsPbI₂Br films. Interestingly, the CsPbI_2?x Br(Ac)_x PSCs exhibit a maximum PCE of 15.56% and an ultrahigh open circuit voltage (V_oc) of 1.30 V without sacrificing photocurrent. Notably, such a remarkable V_oc is among the highest values of the previously reported CsPbI₂Br PSCs, while the PCE far exceeds all of them. In addition, the obtained CsPbI_2?x Br(Ac)_x PSCs exhibit high reproducibility and good stability. The stable CsPbI_2?x Br(Ac)_x PSCs with high V_oc and PCE are desirable for tandem solar cell applications.     

Synergistic Crystallization Kinetics Modulation and Deep/Shallow Level Defect Passivation via an Organometallic Cobaltocenium Salt Toward High-Performance Inverted Perovskite Solar Cells

Numerous deep/shallow level defects generated at the surface/grain boundaries of perovskite during uncontrollable crystallization pose a formidable challenge to the photovoltaic performance of perovskite solar cells (PSCs). Herein, an organometallic cobaltocenium salt additive, 1-propanol-2-(1,2,3-triazol-4-yl) cobaltocenium hexafluorophosphate (PTCoPF₆), is incorporated into the perovskite precursor solution to regulate crystallization and minimize holistic defects for high-performance inverted PSCs. The cobaltocenium cations and PF₆⁻ in PTCoPF₆ stabilize the Pb-I framework and repair the shallow-level defects of positively and negatively charged vacancies in the perovskite. The N═N in the triazole ring of PTCoPF₆ can passivate the deep-level defects of uncoordinated lead. The interaction between PTCoPF₆ and perovskite materials delays perovskite nucleation and crystal growth, ensuring high-quality perovskite with large grains, and suppressing non-radiative recombination and ion migration. Therefore, the PTCoPF₆-incorporated PSC achieves an impressive power conversion efficiency of 25.03% and outstanding long-term stability. Unencapsulated and encapsulated PTCoPF₆-incorporated PSCs maintain 93% and 95% of their initial efficiencies under 85 °C storage in a nitrogen atmosphere for 1000 h and maximum power point tracking for nearly 1000 h, respectively. Synergistic crystallization kinetic modulation and deep/shallow level defect passivation with ionized metal-organic complex additives will become prevalent methods to improve the efficiency and stability of PSCs.     

High‐Efficiency CsPbI2Br Perovskite Solar Cells with Dopant‐Free Poly(3‐hexylthiophene) Hole Transporting Layers

CsPbI₂Br is emerging as a promising all‐inorganic material for perovskite solar cells (PSCs) due to its more stable lattice structure and moisture resistance compared to CsPbI₃, although its device performance is still much behind this counterpart. Herein, a preannealing process is developed and systematically investigated to achieve high‐quality CsPbI₂Br films by regulating the nucleation and crystallization of perovskite. The preannealing temperature and time are specifically optimized for a dopant‐free poly(3‐hexylthiophene) (P3HT)‐based device to target dopant‐induced drastic performance degradation for spiro‐OMeTAD‐based devices. The resulting P3HT‐based device exhibits comparable power conversion efficiency (PCE) to spiro‐OMeTAD‐based devices but much enhanced ambient stability with over 95% PCE after 1300 h. A diphenylamine derivative is introduced as a buffer layer to improve the energy‐level mismatch between CsPbI₂Br and P3HT. A record‐high PCE of 15.50% for dopant‐free P3HT‐based CsPbI₂Br PSCs is achieved by alleviating the open‐circuit voltage loss with the buffer layer. These results demonstrate that the preannealing processing together with a suitable buffer layer are applicable strategies for developing dopant‐free P3HT PSCs with high efficiency and stability.     

Precursor Engineering for Ambient‐Compatible Antisolvent‐Free Fabrication of High‐Efficiency CsPbI2Br Perovskite Solar Cells

High temperature stable inorganic CsPbX₃ (X: I, Br, or mixed halides) perovskites with their bandgap tailored by tuning the halide composition offer promising opportunities in the design of ideal top cells for high‐efficiency tandem solar cells. Unfortunately, the current high‐efficiency CsPbX₃ perovskite solar cells (PSCs) are prepared in vacuum, a moisture‐free glovebox or other low‐humidity conditions due to their poor moisture stability. Herein, a new precursor system (HCOOCs, HPbI₃, and HPbBr₃) is developed to replace the traditional precursors (CsI, PbI₂, and PbBr₂) commonly used for solar cells of this type. Both the experiments and calculations reveal that a new complex (HCOOH?Cs⁺) is generated in this precursor system. The new complex is not only stable against aging in humid air ambient at 91% relative humidity, but also effectively slows the perovskite crystallization, making it possible to eliminate the popular antisolvent used in the perovskite CsPbI₂Br film deposition. The CsPbI₂Br PSCs based on the new precursor system achieve a champion efficiency of 16.14%, the highest for inorganic PSCs prepared in ambient air conditions. Meanwhile, high air stability is demonstrated for an unencapsulated CsPbI₂Br PSC with 92% of the original efficiency remaining after more than 800 h aging in ambient air.     

Carrier Interfacial Engineering by Bismuth Modification for Efficient and Thermoresistant Perovskite Solar Cells

Organic–inorganic halide perovskite solar cells (PSCs) have emerged as attractive alternatives to conventional solar cells. It is still a challenge to obtain PSCs with good thermal stability and high permanence, especially at extreme outdoor temperatures. This work systematically studies the effects of Bi³⁺ modification on structural, electrical, and optical properties of perovskite films (FA_0.83MA_0.17Pb(I_0.83Br_0.17)₃) and the performance of corresponding PSCs. The results indicate that Bi³⁺ modified PSCs can achieve better thermal stability, photovoltaic response, and reproducibility compared with control cells due to the decreased grain boundaries, enhanced crystallization, and improved electron extraction from perovskite film. As a result, the modified PSC exhibits an optimized power conversion efficiency (PCE) of 19.4% compared with 18.3% for the optimized control device, accompanied by better thermoresistant ability under 100–180 °C and enhanced long‐term stability. The degradation rate of the modified device is reduced by an order of magnitude due to effective structural defect modification in perovskite photoactive layer. It could maintain more than two months at 60 °C. These results shed light on the origin of crystallization and thermal stability of perovskite films, and provide an approach to solve thermal stability issue of PSCs.     

Structurally Reconstructed CsPbI2Br Perovskite for Highly Stable and Square‐Centimeter All‐Inorganic Perovskite Solar Cells

Although all‐inorganic perovskite solar cells (PSCs) demonstrate high thermal stability, cesium‐lead halide perovskites with high iodine content suffer from poor stability of the black phase (α‐phase). In this study, it is demonstrated that incorporating InCl₃ into the host perovskite lattice helps to inhibit the formation of yellow phase (δ‐phase) perovskite and thereby enhances the long‐term ambient stability. The enhanced stability is achieved by a strategy for the structural reconstruction of CsPbI₂Br perovskite by means of In³⁺ and Cl^? codoping, which gives rise to a significant improvement in the overall spatial symmetry with a closely packed atom arrangement due to the crystal structure transformation from orthorhombic (Pnma) to cubic (Pm‐3m). In addition, a novel thermal radiation heating method that further improves the uniformity of the perovskite thin films is presented. This approach enables the construction of all‐inorganic InCl₃:CsPbI₂Br PSCs with a champion power conversion efficiency of 13.74% for a small‐area device (0.09 cm²) and 11.4% for a large‐area device (1.00 cm²).     

Dopant-free Starlike Molecular Hole Conductor with Ordered Packing for Durable all-Inorganic Perovskite Solar Cells

All-inorganic n-i-p perovskite solar cells (PSCs) using doped Spiro-OMeTAD as hole transport material (HTM) suffer from photothermal stability due to ionic diffusion and radical-induced degradation by the dopants. In this article, dopant-free starlike molecule (N2, N2-bis(4-(bis(4-methoxyphenyl)amino)phenyl)-N5,N5-bis(4-methoxyphenyl)pyridine-2,5-diamine (BD)) is synthesized to engineer the stacking properties and delivered higher hole mobility than doped Spiro-OMeTAD (3.2 × 10⁻⁴ versus 1.76 × 10⁻⁴ cm² V⁻¹ s⁻¹) as dopant-free HTM. Starlike BD HTM has a twisted acceptor unit and strong dipole, forming crystalline and ordered packing film to ensure intramolecular charge transfer and improve mobility. The BD CsPbI₃ PSCs deliver the maximum efficiency of 19.19%, which is the highest performance for all-inorganic PSCs based on dopant-free HTMs. Meanwhile, the ordered molecules-packing blocks the migration channel of I⁻ ions to metal electrodes and improves the device stability. BD-based devices maintain more than 93% and 80% of the initial efficiency after 85 °C storage for 35 days and maximum power point (MPP) tracking at 85 °C for 1000 h, respectively.     

In Situ Polymerization of Cross-Linked Perovskite–Polymer Composites for Highly Stable and Efficient Perovskite Solar Cells

Mixed-halide perovskites have emerged as outstanding light absorbers that enable the fabrication of efficient solar cells; however, their instability hinders the commercialization of such systems. Grain-boundary (GB) defects and lattice tensile strain are critical intrinsic-instability factors in polycrystalline perovskite films. In this study, the light-induced cross-linking of acrylamide (Am) monomers with non-crystalline perovskite films is used to fabricate highly efficient and stable perovskite solar cells (PSCs). The Am monomers induce the preferred crystal orientation in the polycrystalline perovskite films, enlarge the perovskite grain size, and cross-link the perovskite grains. Additionally, the liquid properties of Am effectively releases lattice strain during perovskite-film crystallization. The cross-linked interfacial layer functions as an airtight wall that protects the perovskite film from water corrosion. Devices fabricated using the proposed strategy show an excellent power conversion efficiency (PCE) of 24.45% with an open-circuit voltage (V_OC) of 1.199 V, which, to date, is the highest V_OC reported for hybrid PSCs with electron transport layers (ETLs) comprised of TiO₂. Large-area PSC modules fabricated using the proposed strategy show a power conversion efficiency of 20.31% (with a high fill factor of 77.1%) over an active area of 33 cm², with excellent storage stability.     

A Low-Temperature Additive-Involved Leaching Method for Highly Efficient Inorganic Perovskite Solar Cells

Inorganic CsPbI₃ perovskite with an optical bandgap ranging from 1.67 to 1.75 eV is a promising light-harvesting material as a top cell in tandem solar cells, but its high fabrication temperature can damage the middle layers or the bottom subcells. Here, an additive-involved leaching method to fabricate CsPbI₃ perovskite films is demonstrated, which can decrease the preparation temperature to 100 °C. The CsPbI₃ perovskite films with high crystallinity are achieved by a solution assisted reaction between DMAPbI₃ and Cs₄PbI₆ with the leaching of DMA⁺, Cs⁺, and I⁻. The as-prepared CsPbI₃ perovskite films exhibit much superior stability compared to their high-temperature counterparts. As a result, a power conversion efficiency of over 16% is obtained, and the unencapsulated device maintains over 93% of the initial efficiency after aging for 30 days in air with a relative humidity of 10%.     

Columnar Liquid Crystal Enables In-Situ Dispersing of Excess PbI2 Crystals for Efficient and Stable Perovskite Solar Cells

Excess PbI₂ has been deemed as indispensable component to boost the efficiency of perovskite solar cells (PSCs). However, the random aggregation of PbI₂ crystals seriously disturbs the transport behavior of the carrier and accelerates the degradation of perovskite film. Herein, an effective strategy to in situ disperse excess PbI₂ crystals via the columnar liquid crystal (T6TE) is developed. Rapid self-assembly induced by intermolecular π–π interaction enables T6TE to form the ordered columnar phase with “edge-on” orientation in perovskite. The columnar T6TE can efficiently disperse excess PbI₂ crystals with the merits of strong negative electrostatic potential and highly steric hindrance. Target perovskite deserves preferable crystallization and reconstructed surface, leading to reduced defects density, less residual stress, and efficient carrier transport. Besides, the T6TE significantly impedes the degradation of perovskite film and the formation of Pb⁰ defects. Resultant T6TE-assisted PSCs achieve the champion power conversion efficiency (PCE) of 24.27% for mixed Cs⁺-FA⁺-MA⁺ perovskite. The PCE of a larger area (1 cm²) device reaches to 21.50%. The unencapsulated device maintains ≈85% of the initial PCE after 1500 h storage in the atmosphere with 40–60% relative humidity. This work provides a new strategy to in situ disperse excess PbI₂ by incorporating columnar liquid crystal for the first time.     

Patterned Wettability Surface for Competition‐Driving Large‐Grained Perovskite Solar Cells

Novel photovoltaic perovskite solar cells (PSCs) with high‐efficient photovoltaic property are largely in thrall to the uncertain perovskite grain size and inevitable defects. Here, inspired by the competitive growth between tree and grass in the forest system, a competitive perovskite grain growth approach via micro‐contact print (MicroCP) method (CD disk as templates) for printing wettability‐patterned substrate is proposed, aiming to achieve large‐grained perovskite and avoid discontinuous perovskite films caused by the low wettability of substrates. A MicroCP process is employed to construct a patterned wettability surface for the perovskite competitive growth mechanism on the electrode surface. This approach modifies the substrates quickly, ensures the uniform coverage of perovskite due to the function of ‐NH₂ and Pb²⁺ bonds, and converts the perovskite films composed of small grains and pinholes into high‐quality perovskite films, free from pinholes and made up of large grains, resulting in efficiencies over 20% for the MicroCP PSCs.     

Indium Iodide Additive Realizing Efficient Mixed Sn─Pb Perovskite Solar Cells

Low-bandgap mixed tin (Sn)-lead (Pb) perovskite solar cells promise efficiency beyond the pure-Pb ones. However, the difference in the interaction rate of SnI₂ and PbI₂ with organic salts causes spatial distribution heterogeneity of Sn²⁺ and Pb²⁺ in mixed Sn─Pb perovskite layers. This causes a Sn-rich surface, which can trigger more severe Sn²⁺ oxidation and nonradiative recombination. A strategy, of introducing indium ion (In³⁺) into the perovskite precursor solution to compete with Sn²⁺ when reacting with organic salts is developed. Therefore, the nucleation and crystallization of perovskite films are well-controlled, leading to improved film quality with a more balanced Sn/Pb ratio on the film surface. Additionally, In³⁺ has a lower reduction potential compared to Sn²⁺ which can generate an extra energy barrier for Sn²⁺ oxidation. The improved film quality and reduced surface oxidation result in accelerated electron transfer and reduced carrier recombination rate. The modified devices achieve a power conversion efficiency (PCE) of 23.34%, representing one of the highest PCEs in mixed Sn─Pb solar cells made with PCBM.     

In Situ Study of Purified Phase Transition Path for α-FAPbI3 Crystallization

Phase transition during annealing in the two-step sequential deposition has drawn intensive attention as its significance in fabricating superior perovskite films. However, previous works have not paid enough attention to the importance of the purified phase transition path in the crystallization process. Herein, different from the mixed paths in the conventional cognition, purified phase transition path for α-FAPbI₃ crystallization is achieved by introducing dimethylurea (DMU) into lead iodide (PbI₂) precursor solution. The multifunctional molecule is found to design a penetrable porous PbI₂ film and fundamentally regulate the perovskite crystallization by forming single phase transition path via the complete δ-phase during annealing of perovskite. The role of DMU in purified transition path for α-FAPbI₃ crystallization is unraveled with in situ photoluminescence and grazing incidence wide-angle x-ray scattering (GIWAXS) investigation. The crystal quality of perovskite films is significantly improved, resulting in single crystal-like film. The best-performing perovskite solar cells (PSCs) deliver a power conversion efficiency of 24.75%, resulting from the higher FF of 83.25% and an improved long-term stability up to 3600 h. This work highlights the importance of purified phase transition path for the superior crystal quality toward high-performance perovskite photovoltaics.     

Efficient Perovskite Solar Cells Fabricated by Co Partially Substituted Hybrid Perovskite

In the past years, hybrid perovskite materials have attracted great attention due to their superior optoelectronic properties. In this study, the authors report the utilization of cobalt (Co²⁺) to partially substitute lead (Pb²⁺) for developing novel hybrid perovskite materials, CH₃NH₃Pb_1‐xCo_xI₃ (where x is nominal ratio, x = 0, 0.1, 0.2 and 0.4). It is found that the novel perovskite thin films possess a cubic crystal structure with superior thin film morphology and larger grain size, which is significantly different from pristine thin film, which possesses the tetragonal crystal structure, with smaller grain size. Moreover, it is found that the 3d orbital of Co²⁺ ensures higher electron mobilities and electrical conductivities of the CH₃NH₃Pb_1‐xCo_xI₃ thin films than those of pristine CH₃NH₃Pb₄ thin film. As a result, a power conversion efficiency of 21.43% is observed from perovskite solar cells fabricated by the CH₃NH₃Pb_0.9Co_0.1I₃ thin film. Thus, the utilization of Co, partially substituting for Pb to tune physical properties of hybrid perovskite materials provides a facile way to boost device performance of perovskite solar cells.     

Pb‐Reduced CsPb0.9Zn0.1I2Br Thin Films for Efficient Perovskite Solar Cells

Fabrication of efficient Pb reduced inorganic CsPbI₂Br perovskite solar cells (PSC) are an important part of environment‐friendly perovskite technology. In this work, 10% Pb reduction in CsPb_0.9Zn_0.1I₂Br promotes the efficiency of PSCs to 13.6% (AM1.5, 1sun), much higher than the 11.8% of the pure CsPbI₂Br solar cell. Zn²⁺ has stronger interaction with the anions to manipulate crystal growth, resulting in size‐enlarged crystallite with enhanced growth orientation. Moreover, the grain boundaries (GBs) are passivated by the Cs‐Zn‐I/Br compound. The high quality CsPb_0.9Zn_0.1I₂Br greatly diminishes the GB trap states and facilitates the charge transport. Furthermore, the Zn4s‐I5p states slightly reduce the energy bandgap, accounting for the wider solar spectrum absorption. Both the crystalline morphology and energy state change benefit the device performance. This work highlights a nontoxic and stable Pb reduction method to achieve efficient inorganic PSCs.     

Morphology Controlling of All‐Inorganic Perovskite at Low Temperature for Efficient Rigid and Flexible Solar Cells

All‐inorganic cesium lead halide (CsPbX₃) perovskites have emerged as promising photovoltaic materials owing to their superior thermal stability compared to traditional organic–inorganic hybrid counterparts. However, the CsPbX₃ perovskites generally need to be prepared at high‐temperature, which restricts their application in multilayer or flexible solar cells. Herein, the formation of CsPbX₃ perovskites at room‐temperature (RT) induced by dimethylsulphoxide (DMSO) coordination is reported. It is further found that a RT solvent (DMSO) annealing (RTSA) treatment is valid to control the perovskite crystallization dynamics, leading to uniform and void‐free films, and consequently a maximum power conversion efficiency (PCE) of 6.4% in the device indium tin oxide (ITO)/NiO _x /RT‐CsPbI₂Br/C₆₀/Bathocuproine (BCP)/Ag, which is, as far as it is known, the first report of RT solution‐processed CsPbX₃‐based perovskite solar cells (PSCs). Moreover, the efficiency can be boosted up to 10.4% by postannealing the RTSA‐treated perovskite film at an optimal temperature of 120 °C. Profiting from the moderate temperature, flexible PSCs are also demonstrated with a maximum PCE of 7.3% for the first time. These results may stimulate further development of all‐inorganic CsPbX₃ perovskites and their application in flexible electronics.     

Simultaneous Improved Performance and Thermal Stability of Planar Metal Ion Incorporated CsPbI2Br All‐Inorganic Perovskite Solar Cells Based on MgZnO Nanocrystalline Electron Transporting Layer

The high thermal stability and facile synthesis of CsPbI₂Br all‐inorganic perovskite solar cells (AI‐PSCs) have attracted tremendous attention. As far as electron‐transporting layers (ETLs) are concerned, low temperature processing and reduced interfacial recombination centers through tunable energy levels determine the feasibility of the perovskite devices. Although the TiO₂ is the most popular ETL used in PSCs, its processing temperature and moderate electron mobility hamper the performance and feasibility. Herein, the highly stable, low‐temperature processed MgZnO nanocrystal‐based ETLs for dynamic hot‐air processed Mn²⁺ incorporated CsPbI2Br AI‐PSCs are reported. By holding its regular planar “n–i–p” type device architecture, the MgZnO ETL and poly(3‐hexylthiophene‐2,5‐diyl) hole transporting layer, 15.52% power conversion efficiency (PCE) is demonstrated. The thermal‐stability analysis reveals that the conventional ZnO ETL‐based AI‐PSCs show a serious instability and poor efficiency than the Mg²⁺ modified MgZnO ETLs. The photovoltaic and stability analysis of this improved photovoltaic performance is attributed to the suitable wide‐bandgap, low ETL/perovskite interface recombination, and interface stability by Mg²⁺ doping. Interestingly, the thermal stability analysis of the unencapsulated AI‐PSCs maintains >95% of initial PCE more than 400 h at 85 °C for MgZnO ETL, revealing the suitability against thermal degradation than conventional ZnO ETL.     

Highly Efficient Perovskite Solar Cells Enabled by Multiple Ligand Passivation

In the past decade, the efficiency of perovskite solar cells quickly increased from 3.8% to 25.2%. The quality of perovskite films plays vital role in device performance. The films fabricated by solution‐process are usually polycrystalline, with significantly higher defect density than that of single crystal. One kind of defect in the films is uncoordinated Pb²⁺, which is usually generated during thermal annealing process due to the volatile organic component. Another detrimental kind of defect is Pb⁰, which is often observed during the film fabrication process or solar cell operation. Because the open circuit voltage has a close relation with the defect density, it is thus desirable to passivate these two kinds of defects. Here, a molecule with multiple ligands is introduced, which not only passivates the uncoordinated Pb²⁺ defects, but also suppresses the formation of Pb⁰ defects. Meanwhile, such a treatment improves the energy level alignment between the valence band of perovskite and the highest occupied molecular orbital of spiro‐OMeTAD. As a result, the performance of perovskite solar cells significantly increases from 19.0% to 21.4%.     

14.1% CsPbI3 Perovskite Quantum Dot Solar Cells via Cesium Cation Passivation

Surface manipulation of quantum dots (QDs) has been extensively reported to be crucial to their performance when applied into optoelectronic devices, especially for photovoltaic devices. In this work, an efficient surface passivation method for emerging CsPbI₃ perovskite QDs using a variety of inorganic cesium salts (cesium acetate (CsAc), cesium idodide (CsI), cesium carbonate (Cs₂CO₃), and cesium nitrate (CsNO₃)) is reported. The Cs‐salts post‐treatment can not only fill the vacancy at the CsPbI₃ perovskite surface but also improve electron coupling between CsPbI₃ QDs. As a result, the free carrier lifetime, diffusion length, and mobility of QD film are simultaneously improved, which are beneficial for fabricating high‐quality conductive QD films for efficient solar cell devices. After optimizing the post‐treatment process, the short‐circuit current density and fill factor are significantly enhanced, delivering an impressive efficiency of 14.10% for CsPbI₃ QD solar cells. In addition, the Cs‐salt‐treated CsPbI₃ QD devices exhibit improved stability against moisture due to the improved surface environment of these QDs. These findings will provide insight into the design of high‐performance and low‐trap‐states perovskite QD films with desirable optoelectronic properties.     

Flash Infrared Annealing for Antisolvent‐Free Highly Efficient Perovskite Solar Cells

Organic–inorganic perovskites have demonstrated an impressive potential for the design of the next generation of solar cells. Perovskite solar cells (PSCs) are currently considered for scaling up and commercialization. Many of the lab‐scale preparation methods are however difficult to scale up or are environmentally unfriendly. The highest efficient PSCs are currently prepared using the antisolvent method, which utilizes a significant amount of an organic solvent to induce perovskite crystallization in a thin film. An antisolvent‐free method is developed in this work using flash infrared annealing (FIRA) to prepare methylammonium lead iodide (MAPbI₃) PSCs with a record stabilized power conversion efficiency of 18.3%. With an irradiation time of fewer than 2 s, FIRA enables the coating of glass and plastic substrates with pinhole‐free perovskite films that exhibit micrometer‐size crystalline domains. This work discusses the FIRA‐induced crystallization mechanism and unveils the main parameters controlling the film morphology. The replacement of the antisolvent method and the larger crystalline domains resulting from flash annealing make FIRA a highly promising method for the scale‐up of PSC manufacture.