The Synergism of DMSO and Diethyl Ether for Highly Reproducible and Efficient MA0.5FA0.5PbI3 Perovskite Solar Cells

Composition and film quality of perovskite are crucial for the further improvement of perovskite solar cells (PSCs), including efficiency, reproducibility, and stability. Here, it is demonstrated that by simply mixing 50% of formamidinium (FA⁺) into methylammonium lead iodide (MAPbI₃), a highly crystalline, stable phase, and compact, polycrystalline grain morphology perovskite is formed by using a solvent‐mediated phase transformation process via the synergism of dimethyl sulfoxide and diethyl ether, which shows long carrier lifetime, low trap state density, and a record certified 21.8% power conversion efficiency (PCE) in pure‐iodide, alkaline‐metal‐free MA_0.5FA_0.5PbI₃ perovskite‐based PSCs. These PSCs show very high operational stability, with 85% PCE retention upon 1000 h 1 Sun intensity illumination. A 17.33% PCE module (6.5 × 7 cm²) is also demonstrated, attesting to the scalability of such devices.     

Highly stable and Efficient Perovskite Solar Cells Based on FAMA‐Perovskite‐Cu:NiO Composites with 20.7% Efficiency and 80.5% Fill Factor

To solve critical issues related to device stability and performance of perovskite solar cells (PSCs), FA_0.026MA_0.974PbI_3?yCl_y‐Cu:NiO (formamidinium methylammonium (FAMA)‐perovskite‐Cu:NiO) and Al₂O₃/Cu:NiO composites are developed and utilized for fabrication of highly stable and efficient PSCs through fully‐ambient‐air processes. The FAMA‐perovskite‐Cu:NiO composite crystals prepared without using any antisolvents not only improve the perovskite film quality with large‐size crystals and less grain boundaries but also tailor optical and electronic properties and suppress charge recombination with reduction of trap density. A champion device based on the composites as light absorber and Al₂O₃/Cu:NiO interfacial layer between electron transport layer and active layer yields power conversion efficiency (PCE) of 20.67% with V_OC of 1.047 V, J_SC of 24.51 mA cm^?2, and fill factor of 80.54%. More importantly, such composite‐based PSCs without encapsulation show significant enhancement in long‐term air‐stability, thermal‐ and photostability with retaining 97% of PCE over 240 d under ambient conditions (25–30 °C, 45–55% humidity).     

Halogen Engineering for Operationally Stable Perovskite Solar Cells via Sequential Deposition

The performance of perovskite solar cells (PSCs) relies on the synthesis method and chemical composition of the perovskite materials. So far, PSCs that have adopted two‐step sequential deposited perovskite with the state‐of‐art composition (FAPbI₃)_1?x(MAPbBr₃)_x (x < 0.05) have achieved record power conversion efficiency (PCE), while their one‐step antisolvent dripping counterparts with typical composition Cs_0.05FA_0.81MA_0.14Pb(I_0.85Br_0.15)₃ with more bromine have exhibited much better long‐term operational stability. Thus, halogen engineering that aims to elevate bromine content in sequential deposited perovskite film would push operational stability of PSCs toward that of antisolvent dripping deposited perovskite materials. Here, a Br‐rich seeding growth method is devised and perovskite seed solution with high bromine content is introduced into a PbI₂ precursor, leading to bromine incorporation in the resulting perovskite film. Photovoltaic devices fabricated by Br‐rich seeding growth method exhibit a PCE of 21.5%, similar to 21.6% for PSCs having lower bromine content. Whereas, the operational stability of PSCs with higher bromine content is significantly enhanced, with over 80% of initial PCE retained after 500 h tracking at maximum power point under 1‐sun illumination. This work highlights the vital importance of halogen composition for the operational stability of PSCs, and introduces an effective way to incorporate bromine into mixed‐cation‐halide perovskite film via sequential deposition method.     

Solvent Engineering Boosts the Efficiency of Paintable Carbon‐Based Perovskite Solar Cells to Beyond 14%

Carbon‐based hole transport material (HTM)‐free perovskite solar cells (PSCs) have shown much promise for practical applications because of their high stability and low cost. However, the efficiencies of this kind of PSCs are still relatively low, especially for the simplest paintable carbon‐based PSCs, in comparison with the organic HTM‐based PSCs. This can be imputed to the perovskite deposition methods that are not very suitable for this kind of devices. A solvent engineering strategy based on two‐step sequential method is exploited to prepare a high‐quality perovskite layer for the paintable carbon‐based PSCs in which the solvent for CH₃NH₃I (MAI) solution at the second step is changed from isopropanol (IPA) to a mixed solvent of IPA/Cyclohexane (CYHEX). This mixed solvent not only accelerates the conversion of PbI₂ to CH₃NH₃PbI₃ but also suppresses the Ostwald ripening process resulting in a high‐quality perovskite layer, e.g., pure phase, even surface, and compact capping layer. The paintable carbon‐based PSCs fabricated from IPA/CYHEX solvent exhibits a considerable enhancement in photovoltaic performance and performance reproducibility in comparison with that from pure IPA, especially on fill factor (FF), owing mainly to the better contact of perovskite/carbon interface, lower trap density in perovskite, higher light absorption ability, and faster charge transport of perovskite layer. As a result, the highest power conversion efficiency (PCE) of 14.38% is obtained, which is a record value for carbon‐based HTM‐free PSCs. Furthermore, a PCE of as high as 10% is achieved for the large area device (1 cm²), also the highest of its kind.     

Incorporating CsF into the PbI2 Film for Stable Mixed Cation‐Halide Perovskite Solar Cells

Adding a small amount of CsI into mixed cation‐halide perovskite film via a one‐step method has been demonstrated as an excellent strategy for high‐performance perovskite solar cells (PSCs). However, the one‐step method generally relies on an antisolvent washing process, which is hard to control and not suitable for fabricating large‐area devices. Here, CsF is employed and Cs is incorporated into perovskite film via a two‐step method. It is revealed that CsF can effectively diffuse into the PbI₂ seed film, and drastically enhances perovskite crystallization, leading to high‐quality Cs‐doped perovskite film with a very long photoluminescence carrier lifetime (1413 ns), remarkable light stability, thermal stability, and humidity stability. The fabricated PSCs show power conversion efficiency (PCE) of over 21%, and they are highly thermally stable: in the aging test at 60 °C for 300 h, 96% of the original PCE remains. The CsF incorporation process provides a new avenue for stable high‐performance PSCs.     

Efficient and Highly Air Stable Planar Inverted Perovskite Solar Cells with Reduced Graphene Oxide Doped PCBM Electron Transporting Layer

Reduced graphene oxide (rGO) is added in the [6,6]‐Phenyl‐C61‐butyric acid methyl ester (PCBM) electron transport layer (ETL) of planar inverted perovskite solar cells (PSCs), resulting in a power conversion efficiency (PCE) improvement of ≈12%, with a hysteresis‐free PCE of 14.5%, compared to 12.9% for the pristine PCBM based device. The universality of the method is demonstrated in PSCs based on CH₃NH₃PbI_3?x Cl_x and CH₃NH₃PbI₃ perovskites, deposited through one step and two step spin coating process, respectively. After a comprehensive spectroscopic characterization of both devices, it is clear that the introduction of rGO in PCBM ETL results in an important increase of the ETL conductivity, together with reduced series resistance and surface roughness. As a result, a significant photoluminescence quenching of such perovskite/ETL is observed, confirming the increased measured short circuit current density. Transient absorption measurements reveal that in the rGO‐based device, the relaxation process of the excited electrons is significantly faster compared to the reference, which implies that the charge injection rate is significantly faster for the first. Furthermore, the light soaking effect is significantly reduced. Finally, aging measurements reveal that the rGO stabilizes the ELT/perovskite interface, which results in the stabilization of perovskite crystal structure after prolonged illumination.     

Diammonium and Monoammonium Mixed‐Organic‐Cation Perovskites for High Performance Solar Cells with Improved Stability

Remarkable power conversion efficiencies (PCE) of metal–halide perovskite solar cells (PSCs) are overshadowed by concerns about their ultimate stability, which is arguably the prime obstacle to commercialization of this promising technology. Herein, the problem is addressed by introducing ethane‐1,2‐diammonium (⁺NH₃(CH₂)₂NH₃⁺, EDA²⁺) cations into the methyl ammonium (CH₃NH₃⁺, MA⁺) lead iodide perovskite, which enables, inter alia, systematic tuning of the morphology, electronic structure, light absorption, and photoluminescence properties of the perovskite films. Incorporation of <5 mol% EDA²⁺ induces strain in the perovskite crystal structure with no new phase formed. With 0.8 mol% EDA²⁺, PCE of the MAPbI₃‐based PSCs (aperture of 0.16 cm²) improves from 16.7% ± 0.6% to 17.9% ± 0.4% under 1 sun irradiation, and fabrication of larger area devices (aperture 1.04 cm²) with a certified PCE of 15.2% ± 0.5% is demonstrated. Most importantly, EDA²⁺/MA⁺‐based solar cells retain 75% of the initial performance after 72 h of continuous operation at 50% relative humidity and 50 °C under 1 sun illumination, whereas the MAPbI₃ devices degrade by approximately 90% within only 15 h. This substantial improvement in stability is attributed to the steric and coulombic interactions of embedded EDA²⁺ in the perovskite structure.     

A Novel Anion Doping for Stable CsPbI2Br Perovskite Solar Cells with an Efficiency of 15.56% and an Open Circuit Voltage of 1.30 V

The Cs‐based inorganic perovskite solar cells (PSCs), such as CsPbI₂Br, have made a striking breakthrough with power conversion efficiency (PCE) over 16% and potential to be used as top cells for tandem devices. Herein, I^? is partially replaced with the acetate anion (Ac^?) in the CsPbI₂Br framework, producing multiple benefits. The Ac^? doping can change the morphology, electronic properties, and band structure of the host CsPbI₂Br film. The obtained CsPbI_2?x Br(Ac)_x perovskite films present lower trap densities, longer carrier lifetimes, and fast charge transportation compared to the host CsPbI₂Br films. Interestingly, the CsPbI_2?x Br(Ac)_x PSCs exhibit a maximum PCE of 15.56% and an ultrahigh open circuit voltage (V_oc) of 1.30 V without sacrificing photocurrent. Notably, such a remarkable V_oc is among the highest values of the previously reported CsPbI₂Br PSCs, while the PCE far exceeds all of them. In addition, the obtained CsPbI_2?x Br(Ac)_x PSCs exhibit high reproducibility and good stability. The stable CsPbI_2?x Br(Ac)_x PSCs with high V_oc and PCE are desirable for tandem solar cell applications.     

Extrinsic Movable Ions in MAPbI3 Modulate Energy Band Alignment in Perovskite Solar Cells

Ionic movement is considered awful in perovskite solar cells (PSCs) for relating with the hysteresis and long‐term instability. However, the positive role of ions to enhance the energy band bending for high performance PSC is always overlooked, let alone reducing the hysteresis. In this work, LiI is doped in CH₃NH₃PbI₃. It is observed that the aggregation of Li⁺/I^? tunes the energy level of the perovskite and induces n/p doping in CH₃NH₃PbI₃, which makes charge extraction quite efficient from perovskite to both NiO and [6,6]‐phenyl‐C61‐butyric acid methyl ester (PCBM) layer. Therefore, in NiO/LiI doped perovskite/PCBM solar cells, Li⁺ and I^? modulate the interface energy band alignment to facilitate the electron/hole transport and reduce the interface energy loss. On the other hand, n/p doping enlarges Fermi energy level splitting of the PSCs to improve the photovoltage. The performance of LiI doped PSCs is much higher with reduced hysteresis compared to the undoped solar cells. This work highlights the positive effect of selective ionic doping, which is promisingly important to design the stable and efficient PSCs.     

2‐Thiopheneformamidinium‐Based 2D Ruddlesden–Popper Perovskite Solar Cells with Efficiency of 16.72% and Negligible Hysteresis

Formamidinium (FA)‐based 3D perovskite solar cells (PSCs) have been widely studied and they show reduced bandgap, enhanced stability, and improved efficiency compared to MAPbI₃‐based devices. Nevertheless, the FA‐based spacers have rarely been studied for 2D Ruddlesden–Popper (RP) perovskites, which have drawn wide attention due to their enormous potential for fabricating efficient and stable photovoltaic devices. Here, for the first time, FA‐based derivative, 2‐thiopheneformamidinium (ThFA), is successfully synthesized and employed as an organic spacer for 2D RP PSCs. A precursor organic salts‐assisted crystal growth technique is further developed to prepare high quality 2D (ThFA)₂(MA)_n?1Pb_nI_3n+1 (nominal n = 3) perovskite films, which shows preferential vertical growth orientations, high charge carrier mobilities, and reduced trap density. As a result, the 2D RP PSCs with an inverted planar p‐i‐n structure exhibit a dramatically improved power conversion efficiency (PCE) from 7.23% to 16.72% with negligible hysteresis, which is among the highest PCE in 2D RP PSCs with low nominal n‐value of 3. Importantly, the optimized 2D PSCs exhibit a dramatically improved stability with less than 1% degradation after storage in N₂ for 3000 h without encapsulation. These findings provide an effective strategy for developing FA‐based organic spacers toward highly efficient and stable 2D PSCs.     

Vacuum‐Assisted Growth of Low‐Bandgap Thin Films (FA0.8MA0.2Sn0.5Pb0.5I3) for All‐Perovskite Tandem Solar Cells

All‐perovskite multijunction photovoltaics, combining a wide‐bandgap (WBG) perovskite top solar cell (E_G ≈1.6–1.8 eV) with a low‐bandgap (LBG) perovskite bottom solar cell (E_G < 1.3 eV), promise power conversion efficiencies (PCEs) >33%. While the research on WBG perovskite solar cells has advanced rapidly over the past decade, LBG perovskite solar cells lack PCE as well as stability. In this work, vacuum‐assisted growth control (VAGC) of solution‐processed LBG perovskite thin films based on mixed Sn–Pb perovskite compositions is reported. The reported perovskite thin films processed by VAGC exhibit large columnar crystals. Compared to the well‐established processing of LBG perovskites via antisolvent deposition, the VAGC approach results in a significantly enhanced charge‐carrier lifetime. The improved optoelectronic characteristics enable high‐performance LBG perovskite solar cells (1.27 eV) with PCEs up to 18.2% as well as very efficient four‐terminal all‐perovskite tandem solar cells with PCEs up to 23%. Moreover, VAGC leads to promising reproducibility and potential in the fabrication of larger active‐area solar cells up to 1 cm².     

SrTiO3/Al2O3‐Graphene Electron Transport Layer for Highly Stable and Efficient Composites‐Based Perovskite Solar Cells with 20.6% Efficiency

For practical use of perovskite solar cells (PSCs) the instability issues of devices, attributed to degradation of perovskite molecules by moisture, ions migration, and thermal‐ and light‐instability, have to be solved. Herein, highly efficient and stable PSCs based on perovskite/Ag‐reduced graphene oxide (Ag‐rGO) and mesoporous Al₂O₃/graphene (mp‐AG) composites are reported. The mp‐AG composite is conductive with one‐order of magnitude higher mobility than mp‐TiO₂ and used for electron transport layer (ETL). Compared to the mp‐TiO₂ ETL based cells, the champion device based on perovskite/Ag‐rGO and SrTiO₃/mp‐AG composites shows overall a best performance (i.e., V_OC = 1.057 V, J_SC = 25.75 mA cm^?2, fill factor (FF) = 75.63%, and power conversion efficiency (PCE) = 20.58%). More importantly, the champion device without encapsulation exhibits not only remarkable thermal‐ and photostability but also long‐term stability, retaining 97–99% of the initial values of photovoltaic parameters and sustaining ≈93% of initial PCE over 300 d under ambient conditions.     

Long‐Lasting Nanophosphors Applied to UV‐Resistant and Energy Storage Perovskite Solar Cells

Recently, considerable progress is achieved in lab prototype perovskite solar cells (PSCs); however, the stability of outdoor applications of PSCs remains a challenge due to the high sensitivity of perovskite material under moist and ultraviolet (UV) light conditions. In this work, the UV photostability of PSC devices is improved by incorporating a photon downshifting layer—SrAl₂O₄: Eu²⁺, Dy³⁺ (SAED)—prepared using the pulsed laser deposition approach. Light‐induced deep trap states in the photoactive layer are depressed, and UV light‐induced device degradation is inhibited after the SAED modification. Optimized power conversion efficiency (PCE) of 17.8% is obtained through the enhanced light harvesting and reduced carrier recombination provided by SAED. More importantly, a solar energy storage effect due to the long‐persistent luminescence of SAED is obtained after light illumination is turned off. The introduction of downconverting material with long‐persistent luminescence in PSCs not only represents a new strategy to improve PCE and light stability by photoconversion from UV to visible light but also provides a new paradigm for solar energy storage.     

Molecular Engineering Using an Anthanthrone Dye for Low‐Cost Hole Transport Materials: A Strategy for Dopant‐Free,High‐Efficiency,and Stable Perovskite Solar Cells

In this report, highly efficient and humidity‐resistant perovskite solar cells (PSCs) using two new small molecule hole transporting materials (HTM) made from a cost‐effective precursor anthanthrone (ANT) dye, namely, 4,10‐bis(1,2‐dihydroacenaphthylen‐5‐yl)‐6,12‐bis(octyloxy)‐6,12‐dihydronaphtho[7,8,1,2,3‐nopqr]tetraphene (ACE‐ANT‐ACE) and 4,4′‐(6,12‐bis(octyloxy)‐6,12‐dihydronaphtho[7,8,1,2,3‐nopqr]tetraphene‐4,10‐diyl)bis(N,N‐bis(4‐methoxyphenyl)aniline) (TPA‐ANT‐TPA) are presented. The newly developed HTMs are systematically compared with the conventional 2,2′,7,7′‐tetrakis(N,N′‐di‐p‐methoxyphenylamino)‐9,9′‐spirbiuorene (Spiro‐OMeTAD). ACE‐ANT‐ACE and TPA‐ANT‐TPA are used as a dopant‐free HTM in mesoscopic TiO₂/CH₃NH₃PbI₃/HTM solid‐state PSCs, and the performance as well as stability are compared with Spiro‐OMeTAD‐based PSCs. After extensive optimization of the metal oxide scaffold and device processing conditions, dopant‐free novel TPA‐ANT‐TPA HTM‐based PSC devices achieve a maximum power conversion efficiency (PCE) of 17.5% with negligible hysteresis. An impressive current of 21 mA cm^?2 is also confirmed from photocurrent density with a higher fill factor of 0.79. The obtained PCE of 17.5% utilizing TPA‐ANT‐TPA is higher performance than the devices prepared using doped Spiro‐OMeTAD (16.8%) as hole transport layer at 1 sun condition. It is found that doping of LiTFSI salt increases hygroscopic characteristics in Spiro‐OMeTAD; this leads to the fast degradation of solar cells. While, solar cells prepared using undoped TPA‐ANT‐TPA show dewetting and improved stability. Additionally, the new HTMs form a fully homogeneous and completely covering thin film on the surface of the active light absorbing perovskite layers that acts as a protective coating for underlying perovskite films. This breakthrough paves the way for development of new inexpensive, more stable, and highly efficient ANT core based lower cost HTMs for cost‐effective, conventional, and printable PSCs.     

Synergistic Crystal and Interface Engineering for Efficient and Stable Perovskite Photovoltaics

The presence of bulk and surface defects in perovskite light harvesting materials limits the overall efficiency of perovskite solar cells (PSCs). The formation of such defects is suppressed by adding methylammonium chloride (MACl) as a crystallization aid to the precursor solution to realize high‐quality, large‐grain triple A‐cation perovskite films and that are combined with judicious engineering of the perovskite interface with the electron and hole selective contact materials. A planar SnO₂/TiO₂ double layer oxide is introduced to ascertain fast electron extraction and the surface of the perovskite facing the hole conductor is treated with iodine dissolved in isopropanol to passivate surface trap states resulting in a retardation of radiationless carrier recombination. A maximum solar to electric power conversion efficiency (PCE) of 21.65% and open circuit photovoltage (V_oc) of ≈1.24 V with only ≈370 mV loss in potential with respect to the band gap are achieved, by applying these modifications. Additionally, the defect healing enhances the operational stability of the devices that retain 96%, 90%, and 85% of their initial PCE values after 500 h under continuously light illumination at 20, 50, and 65 °C, respectively, demonstrating one of the most stable planar PSCs reported so far.     

Surface Engineering of TiO2 ETL for Highly Efficient and Hysteresis‐Less Planar Perovskite Solar Cell (21.4%) with Enhanced Open‐Circuit Voltage and Stability

Interfacial studies and band alignment engineering on the electron transport layer (ETL) play a key role for fabrication of high‐performance perovskite solar cells (PSCs). Here, an amorphous layer of SnO₂ (a‐SnO₂) between the TiO₂ ETL and the perovskite absorber is inserted and the charge transport properties of the device are studied. The double‐layer structure of TiO₂ compact layer (c‐TiO₂) and a‐SnO₂ ETL leads to modification of interface energetics, resulting in improved charge collection and decreased carrier recombination in PSCs. The optimized device based on a‐SnO₂/c‐TiO₂ ETL shows a maximum power conversion efficiency (PCE) of 21.4% as compared to 19.33% for c‐TiO₂ based device. Moreover, the modified device demonstrates a maximum open‐circuit voltage (V_oc) of 1.223 V with 387 mV loss in potential, which is among the highest reported value for PSCs with negligible hysteresis. The stability results show that the device on c‐TiO₂/a‐SnO₂ retains about 91% of its initial PCE value after 500 h light illumination, which is higher than pure c‐TiO₂ (67%) based devices. Interestingly, using a‐SnO₂/c‐TiO₂ ETL the PCE loss was only 10% of initial value under continuous UV light illumination after 30 h, which is higher than that of c‐TiO₂ based device (28% PCE loss).     

Improving Perovskite Solar Cells: Insights From a Validated Device Model

To improve the efficiency of existing perovskite solar cells (PSCs), a detailed understanding of the underlying device physics during their operation is essential. Here, a device model has been developed and validated that describes the operation of PSCs and quantitatively explains the role of contacts, the electron and hole transport layers, charge generation, drift and diffusion of charge carriers and recombination. The simulation to the experimental data of vacuum‐deposited CH₃NH₃PbI₃ solar cells over multiple thicknesses has been fit and the device behavior under different operating conditions has been studied to delineate the influence of the external bias, charge‐carrier mobilities, energetic barriers for charge injection/extraction and, different recombination channels on the solar cell performance. By doing so, a unique set of material parameters and physical processes that describe these solar cells is identified. Trap‐assisted recombination at material interfaces is the dominant recombination channel limiting device performance and passivation of traps increases the power conversion efficiency (PCE) of these devices by 40%. Finally, guidelines to increase their performance have been issued and it is shown that a PCE beyond 25% is within reach.     

Few‐Layer MoS2 Flakes as Active Buffer Layer for Stable Perovskite Solar Cells

Solution‐processed few‐layer MoS₂ flakes are exploited as an active buffer layer in hybrid lead–halide perovskite solar cells (PSCs). Glass/FTO/compact‐TiO₂/mesoporous‐TiO₂/CH₃NH₃PbI₃/MoS₂/Spiro‐OMeTAD/Au solar cells are realized with the MoS₂ flakes having a twofold function, acting both as a protective layer, by preventing the formation of shunt contacts between the perovskite and the Au electrode, and as a hole transport layer from the perovskite to the Spiro‐OMeTAD. As prepared PSC demonstrates a power conversion efficiency (η) of 13.3%, along with a higher lifetime stability over 550 h with respect to reference PSC without MoS₂ (Δη/η = ?7% vs. Δη/η = ?34%). Large‐area PSCs (1.05 cm² active area) are also fabricated to demonstrate the scalability of this approach, achieving η of 11.5%. Our results pave the way toward the implementation of MoS₂ as a material able to boost the shelf life of large‐area perovskite solar cells in view of their commercialization.     

Luminescence Imaging Characterization of Perovskite Solar Cells: A Note on the Analysis and Reporting the Results

In this essay, the authors use two properly encapsulated high‐efficiency mesoscopic perovskite solar cells (PSCs), which use a state‐of‐the‐art perovskite composition (HC(NH₂)₂PbI₃)_0.85(CH₃NH₃PbBr₃)_0.15 with excess PbI₂ as the active layer, to demonstrate the potential effect of dynamical electroluminescence responses on the analysis and interpretation of PSCs electrical characteristic. The essay does not aim to determine how to overcome this issue, nor to investigate its physical/chemical origin, although tentative propositions are made; but rather, to warn researchers in the field about the interpretation and reporting the results obtained from luminescence imaging measurements and the effect of image collection timing on the results. This is a critical message since the authors predict that luminescence imaging techniques will soon become one of the key tools for PSCs characterization, both for long‐term stability assessment and fabrication process optimization.     

Simultaneous Improvement of Photovoltaic Performance and Stability by In Situ Formation of 2D Perovskite at (FAPbI3)0.88(CsPbBr3)0.12/CuSCN Interface

To solve the stability issues of perovskite solar cells (PSC), here a novel interface engineering strategy that a versatile ultrathin 2D perovskite (5‐AVA)₂PbI₄ (5‐AVA = 5‐ammoniumvaleric acid) passivation layer that is in situ incorporated at the interface between (FAPbI₃)_0.88(CsPbBr₃)_0.12 and the hole transporting CuSCN is reported. Surface analysis using X‐ray photoelectron spectroscopy confirms the formation of 2D perovskite. Hysteresis is reduced by the interfacial 2D layer, which could be ascribed to improvement of interfacial charge extraction efficiency, associated with suppression of recombination. Moreover, introduction of the interface passivating layer enhances the moisture stability and photostability as compared to the control perovskite film due to hydrophobic nature of 2D perovskite. The unencapsulated device retains 98% of the initial power conversion efficiency (PCE) after 63 d under moisture exposure of about 10% in the dark. A PCE of the control device is boosted from 13.72 to 16.75% as a consequence of enhanced open‐circuit voltage (V_oc) and fill factor along with slightly increased short‐circuit current density (J_sc), which results from reduced trap states of (FAPbI₃)_0.88(CsPbBr₃)_0.12 as evidenced by enhanced carrier lifetimes and charge extraction. The perovskite/hole transport material interface engineering gives insight into simultaneous improvements of PCE and device stability.