Electron‐Beam‐Evaporated Nickel Oxide Hole Transport Layers for Perovskite‐Based Photovoltaics

High‐quality charge carrier transport materials are of key importance for stable and efficient perovskite‐based photovoltaics. This work reports on electron‐beam‐evaporated nickel oxide (NiO_x) layers, resulting in stable power conversion efficiencies (PCEs) of up to 18.5% when integrated into solar cells employing inkjet‐printed perovskite absorbers. By adding oxygen as a process gas and optimizing the layer thickness, transparent and efficient NiO_x hole transport layers (HTLs) are fabricated, exhibiting an average absorptance of only 1%. The versatility of the material is demonstrated for different absorber compositions and deposition techniques. As another highlight of this work, all‐evaporated perovskite solar cells employing an inorganic NiO_x HTL are presented, achieving stable PCEs of up to 15.4%. Along with good PCEs, devices with electron‐beam‐evaporated NiO_x show improved stability under realistic operating conditions with negligible degradation after 40 h of maximum power point tracking at 75 °C. Additionally, a strong improvement in device stability under ultraviolet radiation is found if compared to conventional perovskite solar cell architectures employing other metal oxide charge transport layers (e.g., titanium dioxide). Finally, an all‐evaporated perovskite solar mini‐module with a NiO_x HTL is presented, reaching a PCE of 12.4% on an active device area of 2.3 cm².     

Enhancing the Open‐Circuit Voltage of Perovskite Solar Cells by up to 120 mV Using π‐Extended Phosphoniumfluorene Electrolytes as Hole Blocking Layers

Four π‐extended phosphoniumfluorene electrolytes (π‐PFEs) are introduced as hole‐blocking layers (HBL) in inverted architecture planar perovskite solar cells with the structure of ITO/PEDOT:PSS/MAPbI₃/PCBM/HBL/Ag. The deep‐lying highest occupied molecular orbital energy level of the π‐PFEs effectively blocks holes, decreasing contact recombination. It is demonstrated that the incorporation of π‐PFEs introduces a dipole moment at the PCBM/Ag interface, resulting in significant enhancement of the built‐in potential of the device. This enhancement results in an increase in the open‐circuit voltage of the device by up to 120 mV, when compared to the commonly used bathocuproine HBL. The results are confirmed both experimentally and by numerical simulation. This work demonstrates that interfacial engineering of the transport layer/contact interface by small molecule electrolytes is a promising route to suppress nonradiative recombination in perovskite devices and compensates for a nonideal energetic alignment at the hole‐transport layer/perovskite interface.     

A Printable Organic Electron Transport Layer for Low‐Temperature‐Processed,Hysteresis‐Free,and Stable Planar Perovskite Solar Cells

Despite recent breakthroughs in power conversion efficiencies (PCEs), which have resulted in PCEs exceeding 22%, perovskite solar cells (PSCs) still face serious drawbacks in terms of their printability, reliability, and stability. The most efficient PSC architecture, which is based on titanium dioxide as an electron transport layer, requires an extremely high‐temperature sintering process (≈500 °C), reveals hysterical discrepancies in the device measurement, and suffers from performance degradation under light illumination. These drawbacks hamper the practical development of PSCs fabricated via a printing process on flexible plastic substrates. Herein, an innovative method to fabricate low‐temperature‐processed, hysteresis‐free, and stable PSCs with a large area up to 1 cm² is demonstrated using a versatile organic nanocomposite that combines an electron acceptor and a surface modifier. This nanocomposite forms an ideal, self‐organized electron transport layer (ETL) via a spontaneous vertical phase separation, which leads to hysteresis‐free, planar heterojunction PSCs with stabilized PCEs of over 18%. In addition, the organic nanocomposite concept is successfully applied to the printing process, resulting in a PCE of over 17% in PSCs with printed ETLs.     

Negligible‐Pb‐Waste and Upscalable Perovskite Deposition Technology for High‐Operational‐Stability Perovskite Solar Modules

An upscalable perovskite film deposition method combining raster ultrasonic spray coating and chemical vapor deposition is reported. This method overcomes the coating size limitation of the existing stationary spray, single‐pass spray, and spin‐coating methods. In contrast with the spin‐coating method (>90% Pb waste), negligible Pb waste during PbI₂ deposition makes this method more environmentally friendly. Outstanding film uniformity across the entire area of 5 cm × 5 cm is confirmed by both large‐area compatible characterization methods (electroluminescence and scattered light imaging) and local characterization methods (atomic force microscopy, scanning electron microscopy, photoluminescence mapping, UV–vis, and X‐ray diffraction measurements on multiple sample locations), resulting in low solar cell performance decrease upon increasing device area. With the FAPb(I_0.85Br_0.15)₃ (FA = formamidinium) perovskite layer deposited by this method, champion solar modules show a power conversion efficiency of 14.7% on an active area of 12.0 cm² and an outstanding shelf stability (only 3.6% relative power conversion efficiency decay after 3600 h aging). Under continuous operation (1 sun light illumination, maximum power point condition, dry N₂ atmosphere with <5% relative humidity, no encapsulation), the devices show high light‐soaking stability corresponding to an average T₈₀ lifetime of 535 h on the small‐area solar cells and 388 h on the solar module.     

Improved Performance and Reliability of p‐i‐n Perovskite Solar Cells via Doped Metal Oxides

Perovskite photovoltaics (PVs) have attracted attention because of their excellent power conversion efficiency (PCE). Critical issues related to large‐area PV performance, reliability, and lifetime need to be addressed. Here, it is shown that doped metal oxides can provide ideal electron selectivity, improved reliability, and stability for perovskite PVs. This study reports p‐i‐n perovskite PVs with device areas ranging from 0.09 cm² to 0.5 cm² incorporating a thick aluminum‐doped zinc oxide (AZO) electron selective contact with hysteresis‐free PCE of over 13% and high fill factor values in the range of 80%. AZO provides suitable energy levels for carrier selectivity, neutralizes the presence of pinholes, and provides intimate interfaces. Devices using AZO exhibit an average PCE increase of over 20% compared with the devices without AZO and maintain the high PCE for the larger area devices reported. Furthermore, the device stability of p‐i‐n perovskite solar cells under the ISOS‐D‐1 is enhanced when AZO is used, and maintains 100% of the initial PCE for over 1000 h of exposure when AZO/Au is used as the top electrode. The results indicate the importance of doped metal oxides as carrier selective contacts to achieve reliable and high‐performance long‐lived large‐area perovskite solar cells.     

Few‐Layer MoS2 Flakes as Active Buffer Layer for Stable Perovskite Solar Cells

Solution‐processed few‐layer MoS₂ flakes are exploited as an active buffer layer in hybrid lead–halide perovskite solar cells (PSCs). Glass/FTO/compact‐TiO₂/mesoporous‐TiO₂/CH₃NH₃PbI₃/MoS₂/Spiro‐OMeTAD/Au solar cells are realized with the MoS₂ flakes having a twofold function, acting both as a protective layer, by preventing the formation of shunt contacts between the perovskite and the Au electrode, and as a hole transport layer from the perovskite to the Spiro‐OMeTAD. As prepared PSC demonstrates a power conversion efficiency (η) of 13.3%, along with a higher lifetime stability over 550 h with respect to reference PSC without MoS₂ (Δη/η = ?7% vs. Δη/η = ?34%). Large‐area PSCs (1.05 cm² active area) are also fabricated to demonstrate the scalability of this approach, achieving η of 11.5%. Our results pave the way toward the implementation of MoS₂ as a material able to boost the shelf life of large‐area perovskite solar cells in view of their commercialization.     

Low‐Cost N,N′‐Bicarbazole‐Based Dopant‐Free Hole‐Transporting Materials for Large‐Area Perovskite Solar Cells

Despite the recent unprecedented development of efficient dopant‐free hole transporting materials (HTMs) for high‐performance perovskite solar cells (PSCs) on small‐area devices (≤0.1 cm²), low‐cost dopant‐free HTMs for large‐area PSCs (≥1 cm²) with high power conversion efficiencies (PCEs) have rarely been reported. Herein, two novel HTMs, 3,3′,6,6′ (or 2,2′,7,7′)‐tetrakis(N,N′‐di‐p‐methoxyphenylamine)‐N,N′‐bicarbazole (3,6 BCz‐OMeTAD or 2,7 BCz‐OMeTAD), are synthesized via an extremely simple route from very cheap raw materials. Owing to their excellent film‐forming abilities and matching energy levels, 3,6 BCz‐OMeTAD and 2,7 BCz‐OMeTAD can be successfully employed as a perfect ultrathin (≈30 nm) hole transporting layer in large‐area PSCs up to 1 cm². The 3,6 BCz‐OMeTAD and 2,7 BCz‐OMeTAD based large‐area PSCs show highest PCEs up to 17.0% and 17.6%, respectively. More importantly, high performance large‐area PSCs based on 2,7 BCz‐OMeTAD retain 90% of the initial efficiency after 2000 h storage in an ambient environment without encapsulation.     

Effect of Electron‐Transport Material on Light‐Induced Degradation of Inverted Planar Junction Perovskite Solar Cells

This paper presents a systematic study of the influence of electron‐transport materials on the operation stability of the inverted perovskite solar cells under both laboratory indoor and the natural outdoor conditions in the Negev desert. It is shown that all devices incorporating a Phenyl C₆₁ Butyric Acid Methyl ester ([60]PCBM) layer undergo rapid degradation under illumination without exposure to oxygen and moisture. Time‐of‐flight secondary ion mass spectrometry depth profiling reveals that volatile products from the decomposition of methylammonium lead iodide (MAPbI₃) films diffuse through the [60]PCBM layer, go all the way toward the top metal electrode, and induce its severe corrosion with the formation of an interfacial AgI layer. On the contrary, alternative electron‐transport material based on the perylendiimide derivative provides good isolation for the MAPbI₃ films preventing their decomposition and resulting in significantly improved device operation stability. The obtained results strongly suggest that the current approach to design inverted perovskite solar cells should evolve with respect to the replacement of the commonly used fullerene‐based electron‐transport layers with other types of materials (e.g., functionalized perylene diimides). It is believed that these findings pave a way toward substantial improvements in the stability of the perovskite solar cells, which are essential for successful commercialization of this photovoltaic technology.     

Anomalous Charge‐Extraction Behavior for Graphene‐Oxide (GO) and Reduced Graphene‐Oxide (rGO) Films as Efficient p‐Contact Layers for High‐Performance Perovskite Solar Cells

Reduced graphene oxides (rGO) are synthesized via reduction of GO with reducing agents as a hole‐extraction layer for high‐performance inverted planar heterojunction perovskite solar cells. The best efficiencies of power conversion (PCE) of these rGO cells exceed 16%, much greater than those made of GO and poly(3,4‐ethenedioxythiophene):poly(styrenesulfonate) films. A flexible rGO device shows PCE 13.8% and maintains 70% of its initial performance over 150 bending cycles. It is found that the hole‐extraction period is much smaller for the GO/methylammonium lead‐iodide perovskite (PSK) film than for the other rGO/PSK films, which contradicts their device performances. Photoluminescence and transient photoelectric decays are measured and control experiments are performed to prove that the reduction of the oxygen‐containing groups in GO significantly decreases the ability of hole extraction from PSK to rGO and also retards the charge recombination at the rGO/PSK interface. When the hole injection from PSK to GO occurs rapidly, hole propagation from GO to the indium‐doped tin oxide (ITO) substrate becomes a bottleneck to overcome, which leads to a rapid charge recombination that decreases the performance of the GO device relative to the rGO device.     

Efficient Indium‐Doped TiOx Electron Transport Layers for High‐Performance Perovskite Solar Cells and Perovskite‐Silicon Tandems

In addition to a good perovskite light absorbing layer, the hole and electron transport layers play a crucial role in achieving high‐efficiency perovskite solar cells. Here, a simple, one‐step, solution‐based method is introduced for fabricating high quality indium‐doped titanium oxide electron transport layers. It is shown that indium‐doping improves both the conductivity of the transport layer and the band alignment at the ETL/perovskite interface compared to pure TiO₂, boosting the fill‐factor and voltage of perovskite cells. Using the optimized transport layers, a high steady‐state efficiency of 17.9% for CH₃NH₃PbI₃‐based cells and 19.3% for Cs_0.05(MA_0.17FA_0.83)_0.95Pb(I_0.83Br_0.17)₃‐based cells is demonstrated, corresponding to absolute efficiency gains of 4.4% and 1.2% respectively compared to TiO₂‐based control cells. In addition, a steady‐state efficiency of 16.6% for a semi‐transparent cell is reported and it is used to achieve a four‐terminal perovskite‐silicon tandem cell with a steady‐state efficiency of 24.5%.     

New Strategy for Two‐Step Sequential Deposition: Incorporation of Hydrophilic Fullerene in Second Precursor for High‐Performance p‐i‐n Planar Perovskite Solar Cells

In p‐i‐n planar perovskite solar cells (pero‐SCs) based on methylammonium lead iodide (MAPbI₃) perovskite, high‐quality MAPbI₃ film, perfect interfacial band alignment and efficient charge extracting ability are critical for high photovoltaic performance. In this work, a hydrophilic fullerene derivative [6,6]‐phenyl‐C₆₁‐butyric acid‐(3,4,5‐tris(2‐(2‐(2‐methoxyethoxy)ethoxy)ethoxy)phenyl)methanol ester (PCBB‐OEG) is introduced as additive in the methylammonium iodide precursor solution in the preparation of MAPbI₃ perovskite film by two‐step sequential deposition method, and obtained a top‐down gradient distribution with an ultrathin top layer of PCBB‐OEG. Meanwhile, a high‐quality perovskite film with high crystallinity, less trap‐states, and dense‐grained uniform morphology can well grow on both hydrophilic (poly(3,4‐ethylenedioxythiophene)/poly(styrenesulfonic acid)) and hydrophobic (polytriarylamine, PTAA) hole transport layers. When the PCBB‐OEG‐containing perovskite film (pero‐0.1) is prepared in a p‐i‐n planar pero‐SC with the configuration of ITO/PTAA/pero‐0.1/[6,6]‐phenyl‐C₆₁‐butyric acid methyl ester/Al, the device delivers a promising power conversion efficiency (PCE) of 20.2% without hysteresis, which is one of the few PCE over 20% for the p‐i‐n planar pero‐SCs. Importantly, the pero‐0.1‐based device shows an excellent stability that can retain 98.4% of its initial PCE after being exposed for 300 h under ambient atmosphere with a high humidity, and the flexible pero‐SCs based on pero‐0.1 also demonstrate a promising PCE of 18.1%.     

Solvent Engineering Boosts the Efficiency of Paintable Carbon‐Based Perovskite Solar Cells to Beyond 14%

Carbon‐based hole transport material (HTM)‐free perovskite solar cells (PSCs) have shown much promise for practical applications because of their high stability and low cost. However, the efficiencies of this kind of PSCs are still relatively low, especially for the simplest paintable carbon‐based PSCs, in comparison with the organic HTM‐based PSCs. This can be imputed to the perovskite deposition methods that are not very suitable for this kind of devices. A solvent engineering strategy based on two‐step sequential method is exploited to prepare a high‐quality perovskite layer for the paintable carbon‐based PSCs in which the solvent for CH₃NH₃I (MAI) solution at the second step is changed from isopropanol (IPA) to a mixed solvent of IPA/Cyclohexane (CYHEX). This mixed solvent not only accelerates the conversion of PbI₂ to CH₃NH₃PbI₃ but also suppresses the Ostwald ripening process resulting in a high‐quality perovskite layer, e.g., pure phase, even surface, and compact capping layer. The paintable carbon‐based PSCs fabricated from IPA/CYHEX solvent exhibits a considerable enhancement in photovoltaic performance and performance reproducibility in comparison with that from pure IPA, especially on fill factor (FF), owing mainly to the better contact of perovskite/carbon interface, lower trap density in perovskite, higher light absorption ability, and faster charge transport of perovskite layer. As a result, the highest power conversion efficiency (PCE) of 14.38% is obtained, which is a record value for carbon‐based HTM‐free PSCs. Furthermore, a PCE of as high as 10% is achieved for the large area device (1 cm²), also the highest of its kind.     

UV‐Inert ZnTiO3 Electron Selective Layer for Photostable Perovskite Solar Cells

Although planar‐structured perovskite solar cells (PSCs) have power conversion efficiencies exceeding 24%, the poor photostability, especially with ultraviolet irradiance (UV) severely limits commercial application. The most commonly‐used TiO₂ electron selective layer has a strong photocatalytic effect on perovskite/TiO₂ interface when TiO₂ is excited by UV light. Here a UV‐inert ZnTiO₃ is reported as the electron selective layer in planar PSCs. ZnTiO₃ is a perovskite‐structured semiconductor with excellent chemical stability and poor photocatalysis. Solar cells are fabricated with a structure of indium doped tin oxide (ITO)/ZnTiO₃/Cs_0.05FA_0.81MA_0.14PbI_2.55Br_0.45/Sprio‐MeOTAD/Au. The champion device exhibits a stabilized power conversion efficiency of 19.8% with improved photostability. The device holds 90% of its initial efficiency after 100 h of UV soaking (365 nm, 8 mW cm^?2), compared with 55% for TiO₂‐based devices. This work provides a new class of electron selective materials with excellent UV stability in perovskite solar cell applications.     

Highly stable and Efficient Perovskite Solar Cells Based on FAMA‐Perovskite‐Cu:NiO Composites with 20.7% Efficiency and 80.5% Fill Factor

To solve critical issues related to device stability and performance of perovskite solar cells (PSCs), FA_0.026MA_0.974PbI_3?yCl_y‐Cu:NiO (formamidinium methylammonium (FAMA)‐perovskite‐Cu:NiO) and Al₂O₃/Cu:NiO composites are developed and utilized for fabrication of highly stable and efficient PSCs through fully‐ambient‐air processes. The FAMA‐perovskite‐Cu:NiO composite crystals prepared without using any antisolvents not only improve the perovskite film quality with large‐size crystals and less grain boundaries but also tailor optical and electronic properties and suppress charge recombination with reduction of trap density. A champion device based on the composites as light absorber and Al₂O₃/Cu:NiO interfacial layer between electron transport layer and active layer yields power conversion efficiency (PCE) of 20.67% with V_OC of 1.047 V, J_SC of 24.51 mA cm^?2, and fill factor of 80.54%. More importantly, such composite‐based PSCs without encapsulation show significant enhancement in long‐term air‐stability, thermal‐ and photostability with retaining 97% of PCE over 240 d under ambient conditions (25–30 °C, 45–55% humidity).     

Investigating the Role of 4‐Tert Butylpyridine in Perovskite Solar Cells

The majority of hole‐transporting layers used in n‐i‐p perovskite solar cells contain 4‐tert butylpyridine (tBP). High power‐conversion efficiencies and, in particular, good steady‐state performance appears to be contingent on the inclusion of this additive. On the quest to improve the steady state efficiencies of the carbon nanotube‐based hole‐transporter system, this study has found that the presence of tBP results in an extraordinary improvement in the performance of these devices. By deconstructing a prototypical device and investigating the effect of tBP on each individual layer, the results of this study indicate that this performance enhancement must be due to a direct chemical interaction between tBP and the perovskite material. This study proposes that tBP serves to p‐dope the perovskite layer and investigates this theory with poling and work function measurements.     

High‐Performance Planar Perovskite Solar Cells Using Low Temperature,Solution–Combustion‐Based Nickel Oxide Hole Transporting Layer with Efficiency Exceeding 20%

NiO_x hole transporting layer has been extensively studied in optoelectronic devices. In this paper, the low temperature, solution–combustion‐based method is employed to prepare the NiO_x hole transporting layer. The resulting NiO_x thin films show better quality and preferable energy alignment with perovskite thin film compared to high temperature sol–gel‐processed NiO_x. With this, high‐performance perovskite solar cells are fabricated successfully with power conversion efficiency exceeding 20% using a modified two‐step prepared MA_1?yFA_yPbI_3?xCl_x perovskite. This efficiency value is among the highest values for NiO_x‐based devices. Various characterizations and analyses provide evidence of better film quality, enhanced charge transport and extraction, and suppressed charge recombination. Meanwhile, the device exhibits much better device stability compared to sol–gel‐processed NiO_x and poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate)‐based devices.     

Diffraction‐Grated Perovskite Induced Highly Efficient Solar Cells through Nanophotonic Light Trapping

Achieving light harvesting is crucial for the efficiency of the solar cell. Constructing optical structures often can benefit from micro‐nanophotonic imprinting. Here, a simple and facile strategy is developed to introduce a large area grating structure into the perovskite‐active layer of a solar cell by utilizing commercial optical discs (CD‐R and DVD‐R) and achieve high photovoltaic performance. The constructed diffraction grating on the perovskite active layer realizes nanophotonic light trapping by diffraction and effectively suppresses carrier recombination. Compared to the pristine perovskite solar cells (PSCs), the diffraction‐grating perovskite devices with DVD obtain higher power conversion efficiency and photocurrent density, which are improved from 16.71% and 21.67 mA cm^?2 to 19.71% and 23.11 mA cm^?2. Moreover, the stability of the PSCs with diffraction‐grating‐structured perovskite active layer is greatly enhanced. The method can boost photonics merge into the remarkable perovskite materials for various applications.     

Dopant‐Free Hole Transporting Polymers for High Efficiency,Environmentally Stable Perovskite Solar Cells

Over the past five years, a rapid progress in organometal‐halide perovskite solar cells has greatly influenced emerging solar energy science and technology. In perovksite solar cells, the overlying hole transporting material (HTM) is critical for achieving high power conversion efficiencies (PCEs) and for protecting the air‐sensitive perovskite active layer. This study reports the synthesis and implementation of a new polymeric HTM series based on semiconducting 4,8‐dithien‐2‐yl‐benzo[1,2‐d;4,5‐d′]bistriazole‐alt‐benzo[1,2‐b:4,5‐b′]dithiophenes (pBBTa‐BDTs), yielding high PCEs and environmentally‐stable perovskite cells. These intrinsic (dopant‐free) HTMs achieve a stabilized PCE of 12.3% in simple planar heterojunction cells—the highest value to date for a polymeric intrinsic HTM. This high performance is attributed to efficient hole extraction/collection (the most efficient pBBTa‐BDT is highly ordered and orients π‐face‐down on the perovskite surface) and balanced electron/hole transport. The smooth, conformal polymer coatings suppress aerobic perovskite film degradation, significantly enhancing the solar cell 85 °C/65% RH PCE stability versus typical molecular HTMs.     

Low‐Temperature Solution‐Processed CuCrO2 Hole‐Transporting Layer for Efficient and Photostable Perovskite Solar Cells

Organic–inorganic hybrid perovskite solar cells (PVSCs) have become the front‐running photovoltaic technology nowadays and are expected to profoundly impact society in the near future. However, their practical applications are currently hampered by the challenges of realizing high performance and long‐term stability simultaneously. Herein, the development of inverted PVSCs is reported based on low temperature solution‐processed CuCrO₂ nanocrystals as a hole‐transporting layer (HTL), to replace the extensively studied NiO_x counterpart due to its suitable electronic structure and charge carrier transporting properties. A ≈45 nm thick compact CuCrO₂ layer is incorporated into an inverted planar configuration of indium tin oxides (ITO)/c‐CuCrO₂/perovskite/[6,6]‐phenyl‐C61‐butyric acid methyl ester (PCBM)/bathocuproine (BCP)/Ag, to result in the high steady‐state power conversion efficiency of 19.0% versus 17.1% for the typical low temperature solution‐processed NiO_x‐based devices. More importantly, the optimized CuCrO₂‐based device exhibits a much enhanced photostability than the reference device due to the greater UV light‐harvesting of the CuCrO₂ layer, which can efficiently prevent the perovskite film from intense UV light exposure to avoid associated degradation. The results demonstrate the promising potential of CuCrO₂ nanocrystals as an efficient HTL for realizing high‐performance and photostable inverted PVSCs.     

Structurally Reconstructed CsPbI2Br Perovskite for Highly Stable and Square‐Centimeter All‐Inorganic Perovskite Solar Cells

Although all‐inorganic perovskite solar cells (PSCs) demonstrate high thermal stability, cesium‐lead halide perovskites with high iodine content suffer from poor stability of the black phase (α‐phase). In this study, it is demonstrated that incorporating InCl₃ into the host perovskite lattice helps to inhibit the formation of yellow phase (δ‐phase) perovskite and thereby enhances the long‐term ambient stability. The enhanced stability is achieved by a strategy for the structural reconstruction of CsPbI₂Br perovskite by means of In³⁺ and Cl^? codoping, which gives rise to a significant improvement in the overall spatial symmetry with a closely packed atom arrangement due to the crystal structure transformation from orthorhombic (Pnma) to cubic (Pm‐3m). In addition, a novel thermal radiation heating method that further improves the uniformity of the perovskite thin films is presented. This approach enables the construction of all‐inorganic InCl₃:CsPbI₂Br PSCs with a champion power conversion efficiency of 13.74% for a small‐area device (0.09 cm²) and 11.4% for a large‐area device (1.00 cm²).