Incorporating CsF into the PbI2 Film for Stable Mixed Cation‐Halide Perovskite Solar Cells

Adding a small amount of CsI into mixed cation‐halide perovskite film via a one‐step method has been demonstrated as an excellent strategy for high‐performance perovskite solar cells (PSCs). However, the one‐step method generally relies on an antisolvent washing process, which is hard to control and not suitable for fabricating large‐area devices. Here, CsF is employed and Cs is incorporated into perovskite film via a two‐step method. It is revealed that CsF can effectively diffuse into the PbI₂ seed film, and drastically enhances perovskite crystallization, leading to high‐quality Cs‐doped perovskite film with a very long photoluminescence carrier lifetime (1413 ns), remarkable light stability, thermal stability, and humidity stability. The fabricated PSCs show power conversion efficiency (PCE) of over 21%, and they are highly thermally stable: in the aging test at 60 °C for 300 h, 96% of the original PCE remains. The CsF incorporation process provides a new avenue for stable high‐performance PSCs.     

Mixed 3D–2D Passivation Treatment for Mixed‐Cation Lead Mixed‐Halide Perovskite Solar Cells for Higher Efficiency and Better Stability

Layered low‐dimensional perovskite structures employing bulky organic ammonium cations have shown significant improvement on stability but poorer performance generally compared to their 3D counterparts. Here, a mixed passivation (MP) treatment is reported that uses a mixture of bulky organic ammonium iodide (iso‐butylammonium iodide, iBAI) and formammidinium iodide (FAI), enhancing both power conversion efficiency and stability. Through a combination of inactivation of the interfacial trap sites, characterized by photoluminescence measurement, and formation of an interfacial energetic barrier by which ionic transport is reduced, demonstrated by Kelvin probe force microscopy, MP treatment of the perovskite/hole transport layer interface significantly suppresses photocurrent hysteresis. Using this MP treatment, the champion mixed‐halide perovskite cell achieves a reverse scan and stabilized power conversion efficiency of 21.7%. Without encapsulation, the devices show excellent moisture stability, sustaining over 87% of the original performance after 38 d storage in ambient environment under 75 ± 20% relative humidity. This work shows that FAI/ i BAI, is a new and promising material combination for passivating perovskite/selective‐contact interfaces.     

Understanding Interface Engineering for High‐Performance Fullerene/Perovskite Planar Heterojunction Solar Cells

Interface engineering is critical for achieving efficient solar cells, yet a comprehensive understanding of the interface between a metal electrode and electron transport layer (ETL) is lacking. Here, a significant power conversion efficiency (PCE) improvement of fullerene/perovskite planar heterojunction solar cells from 7.5% to 15.5% is shown by inserting a fulleropyrrolidine interlayer between the silver electrode and ETL. The interface between the metal electrode and ETL is carefully examined using a variety of electrical and surface potential techniques. Electrochemical impedance spectroscopy (EIS) measurements demonstrate that the interlayer enhances recombination resistance, increases electron extraction rate, and prolongs free carrier lifetime. Kelvin probe force microscopy (KPFM) is used to map the surface potential of the metal electrode and it indicates a uniform and continuous work function decrease in the presence of the fulleropyrrolidine interlayer. Additionally, the planar heterojunction fullerene/perovskite solar cells are shown to have good stability under ambient conditions.     

Cesium Doped NiOx as an Efficient Hole Extraction Layer for Inverted Planar Perovskite Solar Cells

Organic–inorganic hybrid perovskite solar cells have resulted in tremendous interest in developing next generation photovoltaics due to high record efficiency exceeding 22%. For inverted structure perovskite solar cells, the hole extraction layers play a significant role in achieving efficient and stable perovskite solar cell by modifying charge extraction, interfacial recombination losses, and band alignment. Here, cesium doped NiO_x is selected as a hole extraction layer to study the impact of Cs dopant on the optoelectronic properties of NiO_x and the photovoltaic performance. Cs doped NiO_x films are prepared by a simple solution‐based method. Both doped and undoped NiO_x films are smooth and highly transparent, while the Cs doped NiO_x exhibits better electron conductivity and higher work function. Therefore, Cs doping results in a significant improvement in the performance of NiO_x‐based inverted planar perovskite solar cells. The best efficiency of Cs doped NiO_x devices is 19.35%, and those devices show high stability as well. The improved efficiency in devices with Cs:NiO_x is attributed to a significant improvement in the hole extraction and better band alignment compared to undoped NiO_x. This work reveals that Cs doped NiO_x is very promising hole extraction material for high and stable inverted perovskite solar cells.     

Metal Halide Perovskite Materials for Solar Cells with Long‐Term Stability

Metal halide perovskite solar cells (PSCs) have emerged as promising candidates for photovoltaic technology with their power conversion efficiencies over 23%. For prototypical organic–inorganic metal halide perovskites, their intrinsic instability poses significant challenges to the commercialization of PSCs. Recently, the scientific community has done tremendous work in composition engineering to develop more robust light‐absorbing layers, including mixed‐ion hybrid perovskites, low‐dimensional hybrid perovskites, and all‐inorganic perovskites. This review provides an overview of the impact of these perovskites on the efficiency and long‐term stability of PSCs.     

Inorganic Halide Perovskite Solar Cells: Progress and Challenges

All‐inorganic perovskite semiconductors have recently drawn increasing attention owing to their outstanding thermal stability. Although all‐inorganic perovskite solar cells (PSCs) have achieved significant progress in recent years, they still fall behind their prototype organic–inorganic counterparts owing to severe energy losses. Therefore, there is considerable interest in further improving the performance of all‐inorganic PSCs by synergic optimization of perovskite films and device interfaces. This review article provides an overview of recent progress in inorganic PSCs in terms of lead‐based and lead‐free composition. The physical properties of all‐inorganic perovskite semiconductors as well as the hole/electron transporting materials are discussed to unveil the important role of composition engineering and interface modification. Finally, a discussion of the prospects and challenges for all‐inorganic PSCs in the near future is presented.     

Vacuum Deposited Triple‐Cation Mixed‐Halide Perovskite Solar Cells

Hybrid lead halide perovskites are promising materials for future photovoltaics applications. Their spectral response can be readily tuned by controlling the halide composition, while their stability is strongly dependent on the film morphology and on the type of organic cation used. Mixed cation and mixed halide systems have led to the most efficient and stable perovskite solar cells reported, so far they are prepared exclusively by solution‐processing. This might be due to the technical difficulties associated with the vacuum deposition from multiple thermal sources, requiring a high level of control over the deposition rate of each precursor during the film formation. In this report, thermal vacuum deposition with multiple sources (3 and 4) is used to prepare for the first time, multications/anions perovskite compounds. These thin‐film absorbers are implemented into fully vacuum deposited solar cells using doped organic semiconductors. A maximum power conversion efficiency of 16% is obtained, with promising device stability. The importance of the control over the film morphology is highlighted, which differs substantially when these compounds are vacuum processed. Avenues to improve the morphology and hence the performance of fully vacuum processed multications/anions perovskite solar cells are proposed.     

LiTFSI‐Free Spiro‐OMeTAD‐Based Perovskite Solar Cells with Power Conversion Efficiencies Exceeding 19%

To date, the most efficient perovskite solar cells (PSCs) employ an n–i–p device architecture that uses a 2,2′,7,7′‐tetrakis(N,N‐di‐p‐methoxyphenyl‐amine)‐9,9′‐spirobifluorene (spiro‐OMeTAD) hole‐transporting material (HTM), which achieves optimum conductivity with the addition of lithium bis(trifluoromethane)sulfonimide (LiTFSI) and air exposure. However, this additive along with its oxidation process leads to poor reproducibility and is detrimental to stability. Herein, a dicationic salt spiro‐OMeTAD(TFSI)₂, is employed as an effective p‐dopant to achieve power conversion efficiencies of 19.3% and 18.3% (apertures of 0.16 and 1.00 cm²) with excellent reproducibility in the absence of LiTFSI and air exposure. As far as it is known, these are the highest‐performing n–i–p PSCs without LiTFSI or air exposure. Comprehensive analysis demonstrates that precise control of the proportion of [spiro‐OMeTAD]⁺ directly provides high conductivity in HTM films with low series resistance, fast hole extraction, and lower interfacial charge recombination. Moreover, the spiro‐OMeTAD(TFSI)₂‐doped devices show improved stability, benefitting from well‐retained HTM morphology without forming aggregates or voids when tested under an ambient atmosphere. A facile approach is presented to fabricate highly efficient PSCs by replacing LiTFSI with spiro‐OMeTAD(TFSI)₂. Furthermore, this study provides an insight into the relationship between device performance and the HTM doping level.     

Interface Engineering for Highly Efficient and Stable Planar p‐i‐n Perovskite Solar Cells

Organic‐inorganic halide perovskite materials have become a shining star in the photovoltaic field due to their unique properties, such as high absorption coefficient, optimal bandgap, and high defect tolerance, which also lead to the breathtaking increase in power conversion efficiency from 3.8% to over 22% in just seven years. Although the highest efficiency was obtained from the TiO₂ mesoporous structure, there are increasing studies focusing on the planar structure device due to its processibility for large‐scale production. In particular, the planar p‐i‐n structure has attracted increasing attention on account of its tremendous advantages in, among other things, eliminating hysteresis alongside a competitive certified efficiency of over 20%. Crucial for the device performance enhancement has been the interface engineering for the past few years, especially for such planar p‐i‐n devices. The interface engineering aims to optimize device properties, such as charge transfer, defect passivation, band alignment, etc. Herein, recent progress on the interface engineering of planar p‐i‐n structure devices is reviewed. This review is mainly focused on the interface design between each layer in p‐i‐n structure devices, as well as grain boundaries, which are the interfaces between polycrystalline perovskite domains. Promising research directions are also suggested for further improvements.