Surface Cleaning and Passivation Using (NH4)2S Treatment for Cu(In,Ga)Se2 Solar Cells: A Safe Alternative to KCN

With the aim of developing a safe alternative to the KCN etchant for the removal of Cu_xSe secondary phases at the surface of Cu(In,Ga)Se₂ (CIGSe) absorber, a method based on ammonium sulfide (AS) chemical treatment is proposed. Although lower etching rates are observed compared with the KCN reference solution, the AS solution is found to selectively etch Cu_xSe phases. In addition, it allows modifying the surface chemical state of the CIGSe absorber by incorporation of sulfur. As a consequence, the minority carrier lifetime located close to the surface of the absorber is found to be improved. Furthermore, it is demonstrated that optimizing the AS treatment time induces a remarkable enhancement in the electrical performances of the CIGSe‐based solar cells.     

Solution‐Processed Low‐Bandgap CuIn(S,Se)2 Absorbers for High‐Efficiency Single‐Junction and Monolithic Chalcopyrite‐Perovskite Tandem Solar Cells

A novel molecular‐ink deposition route based on thiourea and N,N‐dimethylformamide (DMF) that results in a certified solar cell efficiency world record for non‐vacuum deposited CuIn(S,Se)₂ (CIS) absorbers and non‐vacuum deposited absorbers with a bandgap of 1.0 eV, is presented. It is found that by substituting the widely employed solvent dimethyl sulfoxide with DMF, the coordination chemistry of InCl₃ could be altered, dramatically improving ink stability, enabling up to tenfold increased concentrations, omitting the necessity for elevated ink temperatures, and radically accelerating the deposition process. Furthermore, it is shown that by introducing compositionally graded precursor films, film porosity, compositional gradients, and the surface roughness of the absorbers are effectively reduced and device conversion efficiencies are increased up to 13.8% (13.1% certified, active area). The reduced roughness is also seen as crucial to realize monolithically interconnected CIS‐perovskite tandem devices, where semitransparent MAPbI₃ devices are directly deposited on the CIS bottom cell. Confirming the feasibility of this approach, monolithic devices with near perfect voltage addition between subcells of up to 1.40 V are presented.     

Rear Surface Passivation for Ink-Based,Submicron CuIn(S,Se)2 Solar Cells

A N, N-dimethylformamide and thiourea-based route is developed to fabricate submicron (0.55 and 0.75 µm) thick CuIn(S,Se)₂ (CISSe) thin films for photovoltaic applications, addressing challenges of material usage, throughput, and manufacturing costs. However, reducing the absorber film thickness below 1 µm in a regular CISSe solar cell decreases the device efficiency due to losses at the highly-recombinative, and mediocre-reflective Mo/CISSe rear interface. For the first time, to mitigate the rear recombination losses, a novel rear contacting structure involving a surface passivation layer and point contact openings is developed for solution processed CISSe films and demonstrated in tangible devices. An atomic layer deposited Al₂O₃ film is employed to passivate the Mo/CISSe rear surface while precipitates formed via chemical bath deposition of CdS are used to generate nanosized point openings. Consequently, Al₂O₃ passivated CISSe solar cells show an increase in the open-circuit voltage (V_OC) and short-circuit current density when compared to reference cells with equivalent absorber thicknesses. Notably, a V_OC increase of 59 mV contributes to active area efficiencies of 14.2% for rear passivated devices with 0.75 µm thick absorber layers, the highest reported value for submicron-based solution processed, low bandgap CISSe solar cells.     

Advanced Alkali Treatments for High‐Efficiency Cu(In,Ga)Se2 Solar Cells on Flexible Substrates

Flexible, lightweight Cu(In,Ga)Se₂ (CIGS) solar cells grown on polymer substrates are a promising technology with fast growing market prospects. However, power conversion efficiencies of solar cells grown at low temperatures (≈450 °C) remain below the efficiencies of cells grown at high temperature on glass substrates. This contribution discusses the impact on cell efficiency of process improvements of low‐temperature CIGS deposition on flexible polyimide and glass substrates. Different strategies for incorporation of alkali elements into CIGS are evaluated based on a large number of depositions. Postdeposition treatment with heavy alkali (here RbF) enables a thickness reduction of the CdS buffer layer and increases the open‐circuit voltage. Na supply during 3rd stage CIGS deposition positively impacts the cell performance. Coevaporation of heavy alkali (e.g., RbF) during capping layer deposition mitigates the adverse shunting associated with high Cu contents, yielding highest efficiencies with near‐stoichiometric absorber compositions. Furthermore, optimization of the deposition sequence results in absorbers with a 1 µm wide notch region with nearly constant bandgap minimum. The improved processes result in a record cell efficiency of 20.8% for CIGS on flexible substrate.     

Fully Solution‐Processed TCO‐Free Semitransparent Perovskite Solar Cells for Tandem and Flexible Applications

Semitransparent perovskite solar cells (st‐PSCs) have received remarkable interest in recent years because of their great potential in applications for solar window, tandem solar cells, and flexible photovoltaics. However, all reported st‐PSCs require expensive transparent conducting oxides (TCOs) or metal‐based thin films made by vacuum deposition, which is not cost effective for large‐scale fabrication: the cost of TCOs is estimated to occupy ≈75% of the manufacturing cost of PSCs. To address this critical challenge, this study reports a low‐temperature and vacuum‐free strategy for the fabrication of highly efficient TCO‐free st‐PSCs. The TCO‐free st‐PSC on glass exhibits 13.9% power conversion efficiency (PCE), and the four‐terminal tandem cell made with the st‐PSC top cell and c‐Si bottom cell shows an overall PCE of 19.2%. Due to the low processing temperature, the fabrication of flexible st‐PSCs is demonstrated on polyethylene terephthalate and polyimide, which show excellent stability under repeated bending or even crumbing.     

Cation Substitution of Solution‐Processed Cu2ZnSnS4 Thin Film Solar Cell with over 9% Efficiency

To alleviate the limitations of pure sulfide Cu₂ZnSnS₄ (CZTS) thin film, such as band gaps adjustment, antisite defects, secondary phase and microstructure, Cadmium is introduced into CZTS thin film to replace Zn partially to form Cu₂Zn_1?xCd_xSnS₄ (CZCTS) thin film by low‐cost sol–gel method. It is demonstrated that the band gaps and crystal structure of CZCTS thin films are affected by the change in Zn/Cd ratio. In addition, the ZnS secondary phase can be decreased and the grain sizes can be improved to some degree by partial replacement of Zn with Cd in CZCTS thin film. The power conversion efficiency of CZTS solar cell device is enhanced significantly from 5.30% to 9.24% (active area efficiency 9.82%) with appropriate ratio of Zn/Cd. The variation of device parameter as a function of Zn/Cd ratio may be attributed to the change in electronic structure of the bulk CZCTS thin film (i.e., phase change from kesterite to stannite), which in turn affects the band alignment at the CZCTS/buffer interface and the charge separation at this interface.     

Highly Efficient Flexible Hybrid Nanocrystal‐Cu(In,Ga)Se2 (CIGS) Solar Cells

A novel scheme for hybridizing inkjet‐printed thin film Cu(In,Ga)Se₂ (CIGS) solar cells with self‐assembled clusters of nanocrystal quantum dots (NQDs), which provides a 10.9% relative enhancement of the photon conversion efficiency (PCE), is demonstrated. A non‐uniform layer of NQD aggregates is deposited between the transparent conductive oxide and a CdS/CIGS p‐n junction using low cost pulsed‐spray deposition. Hybridization significantly improves the external quantum efficiency of the hybrid devices in the absorption range of the NQDs and in the red to near‐IR parts of the spectrum. The low wavelength response enhancement is found to be induced by luminescent down‐shifting (LDS) from the NQD layer, while the increase at longer wavelengths is attributed to internal scattering from NQD aggregates. LDS is demonstrated using time‐resolved spectroscopy, and the morphology of the NQD layer is investigated in fluorescence microscopy and cross‐sectional transmission electron microscopy. The influence of the NQD dose on the PCE of the hybrid devices is investigated and an optimum value is obtained. The low costs and limited material consumptions associated with pulsed‐spray deposition make these flexible hybrid devices promising candidates to help push thin‐film photovoltaic technology towards grid parity.     

A Bottom‐Up Approach toward All‐Solution‐Processed High‐Efficiency Cu(In,Ga)S2 Photocathodes for Solar Water Splitting

The development of solution‐processable routes to prepare efficient photoelectrodes for water splitting is highly desirable to reduce manufacturing costs. Recently, sulfide chalcopyrites (Cu(In,Ga)S₂) have attracted attention as photocathodes for hydrogen evolution owing to their outstanding optoelectronic properties and their band gap—wider than their selenide counterparts—which can potentially increase the attainable photovoltage. A straightforward and all‐solution‐processable approach for the fabrication of highly efficient photocathodes based on Cu(In,Ga)S₂ is reported for the first time. It is demonstrated that semiconductor nanocrystals can be successfully employed as building blocks to prepare phase‐pure microcrystalline thin films by incorporating different additives (Sb, Bi, Mg) that promote the coalescence of the nanocrystals during annealing. Importantly, the grain size is directly correlated to improved charge transport for Sb and Bi additives, but it is shown that secondary effects can be detrimental to performance even with large grains (for Mg). For optimized electrodes, the sequential deposition of thin layers of n‐type CdS and TiO₂ by solution‐based methods, and platinum as an electrocatalyst, leads to stable photocurrents saturating at 8.0 mA cm^–2 and onsetting at ≈0.6 V versus RHE under AM 1.5G illumination for CuInS₂ films. Electrodes prepared by our method rival the state‐of‐the‐art performance for these materials.     

Solution‐Based Silicon in Thin‐Film Solar Cells

Solution‐based semiconductors give rise to the next generation of thin‐film electronics. Solution‐based silicon as a starting material is of particular interest because of its favorable properties, which are already vastly used in conventional electronics. Here, the application of a silicon precursor based on neopentasilane for the preparation of thin‐film solar cells is reported for the first time, and, for the first time, a performance similar to conventional fabrication methods is demonstrated. Because three different functional layers, n‐type contact layer, intrinsic absorber, and p‐type contact layer, have to be stacked on top of each other, such a device is a very demanding benchmark test of performance of solution‐based semiconductors. Complete amorphous silicon n‐i‐p solar cells with an efficiency of 3.5% are demonstrated, which significantly exceeds previously reported values.     

Carbon Nanotube‐Silicon Solar Cells

Due to the high cost of silicon photovoltaics there is currently great interest in finding alternative semiconductor materials for light harvesting devices. Single‐walled carbon nanotubes are an allotrope of carbon with unique electrical and optical properties and are promising as future photovoltaic materials. It is thus important to investigate the methods of exploiting their properties in photovoltaic devices. In addition to already extensive research using carbon nanotubes in organic photovoltaics and photoelectrochemical cells, another way to do this is to combine them with a relatively well understood model semiconductor such as silicon. Nanotube‐silicon heterojunction solar cells are a recent photovoltaic architecture with demonstrated power conversion efficiencies of up to ～14% that may in part exploit the photoactivity of carbon nanotubes.