Chemical Consequences of Alkali Inhomogeneity in Cu2ZnSnS4 Thin‐Film Solar Cells

This study offers new insight into the role of Na in Cu₂ZnSnS₄ (CZTS) thin film solar cells by studying samples with a spatially varying alkali distribution. This is achieved by omitting a diffusion barrier between the soda‐lime glass substrate and the Mo back contact, where compositional variations of the glass inherently result in non‐uniform alkali distributions in the CZTS. By correlating light beam induced current (LBIC) maps with secondary ion mass spectrometry composition maps, it is shown that samples containing regions of higher Na concentration (“hot spots”) have corresponding LBIC hot spots on comparable length scales. Samples containing an alkali diffusion barrier have lower LBIC dispersion; thus, LBIC can be used to evaluate non‐uniformity in CZTS devices, where a common cause is Na inhomogeneity. Moreover, it is shown that the Na hot spots are strongly correlated with other compositional variations in the device, including increased Cu in‐diffusion with the underlying MoS₂ layer and decreased diffusion of Cd to the back contact. Neither of these effects are well understood in CZTS devices, and neither have previously been correlated with the presence or absence of Na.     

Nanoscale Microstructure and Chemistry of Cu2ZnSnS4/CdS Interface in Kesterite Cu2ZnSnS4 Solar Cells

Sulfurization with various atmosphere and postheat treatments has been reported for earth abundant kesterite Cu₂ZnSnS₄ (CZTS) preparation as cost‐effective material for next‐generation solar cells. A full understanding of the nanoscale microstructure and chemistry of CZTS/CdS interface obtained from these different fabrication routes is currently lacking, yet is critical to developing optimal processing routes for high‐performance kesterite solar cells. Here, the first detailed investigation of the interfacial microstructure and chemistry of CdS/Cu₂ZnSnS₄ heterojunctions is presented. For CZTS obtained from sulfurization in a sulfur‐only atmosphere where highly defective surfaces are present, air annealing followed by etching in the initial stage of chemical bath deposition (CBD) process can effectively eliminate interfacial defects and allow the epitaxial growth of CBD‐CdS, improving the minority lifetime, open circuit voltage (V_OC), and fill factor (FF) of the devices, while blocking Cd diffusion and deteriorating short circuit current (J_sc). For CZTS from sulfurization in a combined sulfur and SnS atmosphere where CBD‐CdS can directly epitaxially grow on CZTS and Cd‐diffusion is clearly observed, associated devices show the longest lifetime and the highest efficiency of 8.76%. Epitaxial growth of CdS and Cd diffusion into CZTS are found to be two crucial features minimizing interfacial recombination and achieving high‐efficiency devices. This will not only enhance the understanding of the device structure and physics of kesterite based solar cells, but also provide an effective way for designing other chalcogenide heterojunction solar cells.     

The Role of Hydrogen from ALD‐Al2O3 in Kesterite Cu2ZnSnS4 Solar Cells: Grain Surface Passivation

In this research, a new route of surface passivation is reported by introducing hydrogen from the atomic layer deposited (ALD) Al₂O₃ layer into pure sulfide Cu₂ZnSnS₄ (CZTS) solar cells. Different amounts of hydrogen are incorporated into the Cu₂ZnSnS₄/CdS interface through controlling the thickness of the ALD‐Al₂O₃ layer. The device with three cycles of ALD‐Al₂O₃ yields the highest efficiency of 8.08% (without antireflection coating) with improved open‐circuit voltage of up to 70 mV. With closer examination on the passivation route of ALD‐Al₂O₃, it is revealed by the surface chemisty study that the Al₂O₃ can be etched away by ammonium hydroxide in the CdS buffer deposition process. Instead, the hydrogen is detected within a shallow depth from the CZTS surface, and makes a significant difference in the measured distribution of contact potential difference and device performance. This may be interpreted by the effect of hydrogen passivation of the CZTS surface by curing dangling bonds at the surface of CZTS grains. This work may provide a new direction of further improving the performance of kesterite solar cells.     

Solution‐Based Silicon in Thin‐Film Solar Cells

Solution‐based semiconductors give rise to the next generation of thin‐film electronics. Solution‐based silicon as a starting material is of particular interest because of its favorable properties, which are already vastly used in conventional electronics. Here, the application of a silicon precursor based on neopentasilane for the preparation of thin‐film solar cells is reported for the first time, and, for the first time, a performance similar to conventional fabrication methods is demonstrated. Because three different functional layers, n‐type contact layer, intrinsic absorber, and p‐type contact layer, have to be stacked on top of each other, such a device is a very demanding benchmark test of performance of solution‐based semiconductors. Complete amorphous silicon n‐i‐p solar cells with an efficiency of 3.5% are demonstrated, which significantly exceeds previously reported values.     

Photovoltaic Materials and Devices Based on the Alloyed Kesterite Absorber (AgxCu1–x)2ZnSnSe4

The photovoltaic absorber Cu₂ZnSn(S_xSe_1–x)₄ (CZTSSe) has attracted interest in recent years due to the earth‐abundance of its constituents and the realization of high performance (12.6% efficiency). The open‐circuit voltage in CZTSSe devices is believed to be limited by absorber band tailing caused by the exceptionally high density of Cu/Zn antisites. By replacing Cu in CZTSSe with Ag, whose covalent radius is ≈15% larger than that of Cu and Zn, the density of I–II antisite defects is predicted to drop. The fundamental properties of the mixed Ag‐Cu kesterite compound are reported as a function of the Ag/(Ag + Cu) ratio. The extent of band tailing is shown to decrease with increasing Ag. This is verified by comparing the optical band gap extrapolated from transmission data with the position of the room‐temperature photoluminescence peak; these values converge for the pure‐Ag compound. Additionally, the pinning of the Fermi level in CZTSSe, attributed to heavy defect compensation and band tailing, is not observed in the pure‐Ag compound, offering further evidence of improved electronic structure. Finally, a device efficiency of 10.2% is reported for a device containing 10% Ag (no antireflection coating); this compares to ≈9% (avg) efficiency for the baseline pure‐Cu CZTSe.     

Thin‐Film Solar Cells with InP Absorber Layers Directly Grown on Nonepitaxial Metal Substrates

The design and performance of solar cells based on InP grown by the nonepitaxial thin‐film vapor–liquid–solid (TF‐VLS) growth technique is investigated. The cell structure consists of a Mo back contact, p‐InP absorber layer, n‐TiO₂ electron selective contact, and indium tin oxide transparent top electrode. An ex situ p‐doping process for TF‐VLS grown InP is introduced. Properties of the cells such as optoelectronic uniformity and electrical behavior of grain boundaries are examined. The power conversion efficiency of first generation cells reaches 12.1% under simulated 1 sun illumination with open‐circuit voltage (V_OC) of 692 mV, short‐circuit current (J_SC) of 26.9 mA cm^?2, and fill factor (FF) of 65%. The FF of the cell is limited by the series resistances in the device, including the top contact, which can be mitigated in the future through device optimization. The highest measured V_OC under 1 sun is 692 mV, which approaches the optically implied V_OC of ≈795 mV extracted from the luminescence yield of p‐InP.     

Oxygenated CdS Buffer Layers Enabling High Open‐Circuit Voltages in Earth‐Abundant Cu2BaSnS4 Thin‐Film Solar Cells

Earth‐abundant Cu₂BaSnS₄ (CBTS) thin films exhibit a wide bandgap of 2.04–2.07 eV, a high absorption coefficient > 10⁴ cm^?1, and a p‐type conductivity, suitable as a top‐cell absorber in tandem solar cell devices. In this work, sputtered oxygenated CdS (CdS:O) buffer layers are demonstrated to create a good p–n diode with CBTS and enable high open‐circuit voltages of 0.9–1.1 V by minimizing interface recombination. The best power conversion efficiency of 2.03% is reached under AM 1.5G illumination based on the configuration of fluorine‐doped SnO₂ (back contact)/CBTS/CdS:O/CdS/ZnO/aluminum‐doped ZnO (front contact).     

Trade‐Offs in Thin Film Solar Cells with Layered Chalcostibite Photovoltaic Absorbers

Discovery of novel semiconducting materials is needed for solar energy conversion and other optoelectronic applications. However, emerging low‐dimensional solar absorbers often have unconventional crystal structures and unusual combinations of optical absorption and electrical transport properties, which considerably slows down the research and development progress. Here, the effect of stronger absorption and weaker carrier collection of 2D‐like absorber materials are studied using a high‐throughput combinatorial experimental approach, complemented by advanced characterization and computations. It is found that the photoexcited charge carrier collection in CuSbSe₂ solar cells is enhanced by drift in an electric field, addressing a different absorption/collection balance. The resulting drift solar cells efficiency is <5% due to inherent J _SC/V _OC trade‐off, suggesting that improved carrier diffusion and better contacts are needed to further increase the CuSbSe₂ performance. This study also illustrates the advantages of high‐throughput experimental methods for fast optimization of the optoelectronic devices based on emerging low‐dimensional semiconductor materials.     

Atomic‐Scale Observation of Oxygen Substitution and Its Correlation with Hole‐Transport Barriers in Cu2ZnSnSe4 Thin‐Film Solar Cells

Kesterite‐type Cu₂ZnSn(S,Se)₄ has been extensively studied over the past several years, with researchers searching for promising candidates for indium‐ and gallium‐free inexpensive absorbers in high‐efficiency thin‐film solar cells. Many notable experimental and theoretical studies have dealt with the effects of intrinsic point defects, Cu/Zn/Sn nonstoichiometry, and cation impurities on cell performance. However, there have been few systematic investigations elucidating the distribution of oxygen at an atomic scale and the correlation between oxygen substitution and charge transport despite unavoidable incorporation of oxygen from the ambient atmosphere during thin‐film fabrication. Using energy‐dispersive X‐ray spectroscopy, scanning transmission electron microscopy, and electron energy‐loss spectroscopy, the presence of nanoscale layers is directly demonstrated in which oxygen is substantially substituted for Se, near grain boundaries in polycrystalline Cu₂ZnSnSe₄ films. Density‐functional theory calculations also show that oxygen substitution remarkably lowers the valence band maximum and subsequently widens the overall bandgap. Consequently, anion modification by oxygen can make a major contribution to the formation of a robust barrier blocking the holes from bulk grains into grain boundaries, thereby efficiently attaining electron?hole separation. The findings provide crucial insights into achieving better energy conversion efficiency in kesterite‐based thin‐film solar cells through optimum control of oxidation during the fabrication process.     

Cadmium Free Cu2ZnSnS4 Solar Cells with 9.7% Efficiency

Cu₂ZnSnS₄(CZTS) thin‐film solar cell absorbers with different bandgaps can be produced by parameter variation during thermal treatments. Here, the effects of varied annealing time in a sulfur atmosphere and an ordering treatment of the absorber are compared. Chemical changes in the surface due to ordering are examined, and a downshift of the valence band edge is observed. With the goal to obtain different band alignments, these CZTS absorbers are combined with Zn_1?xSn_xO_y (ZTO) or CdS buffer layers to produce complete devices. A high open circuit voltage of 809 mV is obtained for an ordered CZTS absorber with CdS buffer layer, while a 9.7% device is obtained utilizing a Cd free ZTO buffer layer. The best performing devices are produced with a very rapid 1 min sulfurization, resulting in very small grains.     

Indoor Thin‐Film Photovoltaics: Progress and Challenges

Energy generation and consumption have always been an important component of social development. Interests in this field are beginning to shift to indoor photovoltaics (IPV) which can serve as power sources under low light conditions to meet the energy needs of rapidly growing fields, such as intelligence gathering and information processing which usually operate via the Internet‐of‐things (IoT). Since the power requirements for this purpose continue to decrease, IPV systems under low light may facilitate the realization of self‐powered high‐tech electronic devices connected through the IoT. This review discusses and compares the characteristics of different types of IPV devices such as those based on silicon, dye, III‐V semiconductors, organic compounds, and halide perovskites. Among them, specific attention is paid to perovskite photovoltaics which may potentially become a high performing IPV system due to the fascinating photophysics of the halide perovskite active layer. The limitations of such indoor application as they relate to the toxicity, stability, and electronic structure of halide perovskites are also discussed. Finally, strategies which could produce highly functional, nontoxic, and stable perovskite photovoltaics devices for indoor applications are proposed.     

Influence of Aggregation on the Performance of All‐Polymer Solar Cells Containing Low‐Bandgap Naphthalenediimide Copolymers

The authors present efficient all‐polymer solar cells comprising two different low‐bandgap naphthalenediimide (NDI)‐based copolymers as acceptors and regioregular P3HT as the donor. It is shown that these naphthalene copolymers have a strong tendency to preaggregate in specific organic solvents, and that preaggregation can be completely suppressed when using suitable solvents with large and highly polarizable aromatic cores. Organic solar cells prepared from such nonaggregated polymer solutions show dramatically increased power conversion efficiencies of up to 1.4%, which is mainly due to a large increase of the short circuit current. In addition, optimized solar cells show remarkable high fill factors of up to 70%. The analysis of the blend absorbance spectra reveals a surprising anticorrelation between the degree of polymer aggregation in the solid P3HT:NDI copolymer blends and their photovoltaic performance. Scanning near‐field optical microscopy (SNOM) and atomic force microscopy (AFM) measurements reveal important information on the blend morphology. It is shown that films with high degree of aggregation and low photocurrents exhibit large‐scale phase‐separation into rather pure donor and acceptor domains. It is proposed that, by suppressing the aggregation of NDI copolymers at the early stage of film formation, the intermixing of the donor and acceptor component is improved, thereby allowing efficient harvesting of photogenerated excitons at the donor–acceptor heterojunction.     

Sodium Passivation of the Grain Boundaries in CuInSe2 and Cu2ZnSnS4 for High‐Efficiency Solar Cells

It is well known that sodium at grain boundaries (GBs) increases the photovoltaic efficiencies of CuInSe₂ and Cu₂ZnSnS₄ significantly. However, the mechanism of how sodium influences the GBs is still unknown. Based on the recently proposed self‐passivation rule, it is found that the dangling bonds in the GBs can completely be saturated through doping the Na, thus GB states are successfully passivated. It is shown that the Na can easily incorporate into the GB with very low formation energy. Although Cu can also passivate the GB states, it requires a copper rich condition which, however, suppresses the formation of copper vacancies in the bulk and thus decreases the concentration of hole carriers, so copper passivation is practically not as beneficial as sodium. The present work reveals the mechanism about how the Na enhances the photovoltaic performance through passivating the dangling bonds in the GBs of chalcogenide semiconductors, and sheds light on how to passivate dangling bonds in GBs with alterative processes.