Improved Bulk Materials with Thermoelectric Figure‐of‐Merit Greater than 1: Tl10–xSnxTe6 and Tl10–xPbxTe6

Noting the steadily worsening problem of depleted fossil fuel sources, alternate energy sources have become increasingly important; these include thermoelectrics, which may use waste heat to generate electricity. To be economically viable, the thermoelectric figure‐of‐merit, zT, which is related to the energy conversion efficiency, needs to be in excess of unity (zT > 1). Tl₄SnTe₃ and Tl₄PbTe₃ were reported to attain a thermoelectric figure‐of‐merit zT _max = 0.74 and 0.71, respectively, at 673 K. Here, the thermoelectric properties of both materials are presented as a function of x in Tl_10–x Sn _x Te₆ and Tl_10–x Pb _x Te₆, with x varying between 1.9 and 2.05, culminating in zT values in excess of 1.2. These materials are charge balanced when x = 2, according to (Tl⁺)₈(Sn²⁺)₂(Te^2?)₆ and (Tl⁺)₈(Pb²⁺)₂(Te^2?)₆ (or: (Tl⁺)₄Pb²⁺(Te^2?)₃). Increasing x causes an increase in valence electrons, and thus a decrease in the dominating p‐type charge carriers. Larger x values occur with a smaller electrical conductivity and a larger Seebeck coefficient. In each case, the lattice thermal conductivity remains under 0.5 W m^?1 K^?1, resulting in several samples attaining the desired zT _max > 1. The highest values thus far are exhibited by Tl_8.05Sn_1.95Te₆ with zT = 1.26 and Tl_8.10Pb_1.90Te₆ with zT = 1.46 around 685 K.     

Subtle Roles of Sb and S in Regulating the Thermoelectric Properties of N‐Type PbTe to High Performance

A high ZT (thermoelectric figure of merit) of ≈1.4 at 900 K for n‐type PbTe is reported, through modifying its electrical and thermal properties by incorporating Sb and S, respectively. Sb is confirmed to be an amphoteric dopant in PbTe, filling Te vacancies at low doping levels (<1%), exceeding which it enters into Pb sites. It is found that Sb‐doped PbTe exhibits much higher carrier mobility than similar Bi‐doped materials, and accordingly, delivers higher power factors and superior ZT . The enhanced electronic transport is attributed to the elimination of Te vacancies, which appear to strongly scatter n‐type charge carriers. Building on this result, the ZT of Pb_0.9875Sb_0.0125Te is further enhanced by alloying S into the Te sublattice. The introduction of S opens the bandgap of PbTe, which suppresses bipolar conduction while simultaneously increasing the electron concentration and electrical conductivity. Furthermore, it introduces point defects and induces second phase nanostructuring, which lowers the lattice thermal conductivity to ≈0.5 W m^?1 K^?1 at 900 K, making this material a robust candidate for high‐temperature (500–900 K) thermoelectric applications. It is anticipated that the insights provided here will be an important addition to the growing arsenal of strategies for optimizing the performance of thermoelectric materials.     

Controlling Metallurgical Phase Separation Reactions of the Ge0.87Pb0.13Te Alloy for High Thermoelectric Performance

We demonstrate the potential of metallurgical controlling of the phase separation reaction, by means of spark plasma sintering consolidation and subsequently controlled heat treatments sequence, for enhancement the thermoelectric properties of the p‐type Ge_0.87Pb_0.13Te composition. Very high ZTs of up to ～2, attributed to the nucleation of sub‐micron phase separation domains and to comparable sized twinning and dislocation networks features, were observed. Based on the experimentally measured transport properties, combined with the previously reported phase separated n‐type (Pb_0.95Sn_0.05Te)_0.92(PbS)_0.08 composition, a maximal efficiency value of ～11.5% was theoretically calculated. These ZT and efficiency values are among the highest reported for single composition non‐segmented bulk material legs.     

Enhancement of Thermoelectric Figure of Merit by the Insertion of MgTe Nanostructures in p‐type PbTe Doped with Na2Te

The thermoelectric properties of crystalline melt‐grown ingots of p‐type PbTe–xMgTe (x = 1–3 mol%) doped with Na₂Te (1–2 mol%) were investigated over the temperature range of 300 K to 810 K. While the powder X‐ray diffraction patterns show that all samples crystallize in the NaCl‐type structure with no MgTe or other phases present, transmission electron microscopy reveals ubiquitous MgTe nanoprecipitates in the PbTe. The very small amounts of MgTe in PbTe have only a small effect on the electrical transport properties of the system, while they have a large effect on thermal transport significantly reducing the lattice thermal conductivity. A ZT of 1.6 at 780 K is achieved for the PbTe containing 2% MgTe doped with 2% Na₂Te.     

High Thermoelectric Performance in Polycrystalline SnSe Via Dual‐Doping with Ag/Na and Nanostructuring With Ag8SnSe6

Single crystalline SnSe is one of the most intriguing new thermoelectric materials but the thermoelectric performance of polycrystalline SnSe seems to lag significantly compared to that of a single crystal. Here an effective strategy for enhancing the thermoelectric performance of p‐type polycrystalline SnSe by Ag/Na dual‐doping and Ag₈SnSe₆ (STSe) nanoprecipitates is reported. The Ag/Na dual‐doping leads to a two orders of magnitude increase in carrier concentration and a convergence of valence bands (VBM₁ and VBM₅), which in turn results in sharp enhancement of electrical conductivities and high Seebeck coefficients in the Ag/Na dual‐doped samples. Additionally, the SnSe matrix becomes nanostructured with dispersed nanoprecipitates of the compound Ag₈SnSe₆, which further strengthens the scattering of phonons. Specifically, ≈20% reduction in the already ultralow lattice thermal conductivity is realized for the Sn_0.99Na_0.01Se–STSe sample at 773 K compared to the thermal conductivity of pure SnSe. Consequently, a peak thermoelectric figure of merit ZT of 1.33 at 773 K with a high average ZT (ZT_ave) value of 0.91 (423–823 K) is achieved for the Sn_0.99Na_0.01Se–STSe sample.     

High Thermoelectric Efficiency of n‐type PbS

PbS shares several features with the other lead chalcogenides PbX (X: Te, Se), which are good thermoelectric materials. PbS has a potential advantage in that it is quite earth abundant and inexpensive. In this work we tune the transport properties in n‐type, single‐phase polycrystalline PbS_1‐xCl_x (x ≤ 0.008) with different carrier densities. Lead chloride provides a nearly 100% efficient doping control up to 1.2 × 10²⁰ cm^?3. The maximum zT achieved at 850 K is 0.7 with a predicted zT ～ 1 at 1000 K. This is about twice as high as what was previously reported (～0.4) for binary PbS. Compared with the other lead chalcogenides the higher effective mass and higher lattice thermal conductivity makes binary PbS an inferior thermoelectric material. However this study also predicts greater potential of zT improvement in PbS by material engineering such as alloying or nanostructuring compared to PbSe or PbTe. Considering their abundance and low cost, PbS based materials are quite competitive among the lead chalcogenides for thermoelectric applications.     

CdTe1‐xSex/Cd0.5Zn0.5S core/shell quantum dots: core composition and property

Alloy CdTe_1‐xSe_x quantum dots (QDs) have been fabricated by an organic route using Cd, Te and Se precursors in a mixture of trioctylamine and octadecylphosphonic acid at 280 °C. The variation of photoluminescence (PL) peak wavelength of the CdTe_1‐xSe_x QDs compared with CdTe QDs confirmed the formation of an alloy structure. The Se component drastically affected the stability of CdTe_1‐xSe_x QDs. A Cd_0.5Zn_0.5S shell coating on CdTe_1‐xSe_x cores was carried out using oleic acid as a capping agent. CdTe_1‐xSe_x/Cd_0.5Zn_0.5S core/shell QDs revealed dark red PL while a yellow PL peak was observed for the CdTe_1‐xSe_x cores. The PL efficiency of the core/shell QDs was drastically increased (less than 1% for the cores and up to 65% for the core/shell QDs). The stability of QDs in various buffer solutions was investigated. Core/shell QDs can be used for biological applications because of their high stability, tunable PL and high PL efficiency. Copyright © 2013 John Wiley & Sons, Ltd.     

Lead‐Free Thermoelectrics: High Figure of Merit in p‐type AgSnmSbTem+2

Thermoelectric materials based on Pb‐free compositions are of considerable current interest in environmentally friendly power‐generation applications derived from waste‐heat sources. Here, a new study of the thermoelectric properties of the tin‐based compositions with the general formula AgSn_mSbTe_m+2 (m = 2, 4, 5, 7, 10, 14, 18) is presented, where the m value is used as the tuning parameter of the thermoelectric properties. The electrical conductivity, Seebeck coefficient, and thermal conductivity are measured from 300 K to 723 K and the resulting thermoelectric figure of merit is determined as a function of the SnTe/AgSbTe₂ ratio. A thermoelectric figure of merit ZT ≈1 is obtained at 710 K for m = 4, indicating that the system AgSn_mSbTe_m+2 holds great promise as an alternative p‐type, lead‐free, thermoelectric material.     

Understanding the Film Formation Kinetics of Sequential Deposited Narrow‐Bandgap Pb–Sn Hybrid Perovskite Films

Developing efficient narrow bandgap Pb–Sn hybrid perovskite solar cells with high Sn‐content is crucial for perovskite‐based tandem devices. Film properties such as crystallinity, morphology, surface roughness, and homogeneity dictate photovoltaic performance. However, compared to Pb‐based analogs, controlling the formation of Sn‐containing perovskite films is much more challenging. A deeper understanding of the growth mechanisms in Pb–Sn hybrid perovskites is needed to improve power conversion efficiencies. Here, in situ optical spectroscopy is performed during sequential deposition of Pb–Sn hybrid perovskite films and combined with ex situ characterization techniques to reveal the temporal evolution of crystallization in Pb–Sn hybrid perovskite films. Using a two‐step deposition method, homogeneous crystallization of mixed Pb–Sn perovskites can be achieved. Solar cells based on the narrow bandgap (1.23 eV) FA_0.66MA_0.34Pb_0.5Sn_0.5I₃ perovskite absorber exhibit the highest efficiency among mixed Pb–Sn perovskites and feature a relatively low dark carrier density compared to Sn‐rich devices. By passivating defect sites on the perovskite surface, the device achieves a power conversion efficiency of 16.1%, which is the highest efficiency reported for sequential solution‐processed narrow bandgap perovskite solar cells with 50% Sn‐content.     

Integrating Band Structure Engineering with All‐Scale Hierarchical Structuring for High Thermoelectric Performance in PbTe System

PbTe_1?x Se_x ‐2%Na‐y%SrTe system is investigated and a high maximum ZT of 2.3 at 923 K for PbTe_0.85Se_0.15‐2%Na‐4%SrTe is reported. This is achieved by performing electronic band structures modifications as well as all‐scale hierarchical structuring and combining the two effects. It is found that high ZTs in PbTe_0.85Se_0.15‐2%Na‐4%SrTe are possible at all temperature from 300 to 873 K with an average ZT_ave of 1.23. The high performance in PbTe_1?x Se_x ‐2%Na‐y%SrTe can be achieved by either choosing PbTe‐2Na‐4SrTe or PbTe_0.85Se_0.15‐2Na as a matrix. At room temperature the carrier mobility shows negligible variations as SrTe fraction is increased, however the lattice thermal conductivity is significantly reduced from ≈1.1 to ≈0.82 W m^?1 K^?1 when 5.0% SrTe is added, correspondingly, the lattice thermal conductivity at 923 K decreases from ≈0.59 to ≈0.43 W m?¹ K^?1. The power factor maxima of PbTe_1?x Se_x ‐2Na‐4SrTe shift systematically to higher temperature with rising Se fractions due to bands divergence. The maximum power factors reach ≈27, ≈30, ≈31 μW cm^?1 K^?2 for the x = 0, 0.05, and 0.15 samples peak at 473, 573, and 623 K, respectively. The results indicate that ZT can be increased by synergistic integration of band structure engineering and all‐scale hierarchical architectures.     

Optimizations of Pulsed Plated p and n‐type Bi2Te3‐Based Ternary Compounds by Annealing in Different Ambient Atmospheres

This work presents a comprehensive study of the fabrication and optimization of electrodeposited p‐ and n‐type thermoelectric films. The films are deposited on Au and stainless steel substrates over a wide range of deposition potentials. The influence of the preparative parameters such as the composition of the electrolyte bath and the deposition potential are investigated. Furthermore, the p‐doped (Bi_xSb_1‐x)₂Te₃ and the n‐doped Bi₂(Te_xSe_1‐x)₃ films are annealed for a period of about 1 h under helium and under tellurium atmosphere at 250 °C for 60h. Annealing in He already leads to significant improvements in the thermoelectric performance. Furthermore, due to the equilibrium conditions during the process, annealing in Te atmosphere leads to a strongly improved film composition, charge carrier density and mobility. The Seebeck coefficients increase to values up to +182 μV K^?1 for p‐doped and–130 μV K^?1 for n‐doped materials at room temperature. The power factors also exhibit improvements with 1320 μW m^?1 K^?2 and 820 μW m^?1 K^?2 for p‐doped and n‐doped films, respectively. Additionally, in‐situ XRD measurements performed during annealing of the films up to 600K under He atmosphere show stepwise improvements of the crystal structure leading to the improvements in thermoelectric parameters. The thermal conductivity is between 1.2 W m^?1 K^?1 and 1.0 W m^?1 K^?1.     

Effect of Hf Concentration on Thermoelectric Properties of Nanostructured N‐Type Half‐Heusler Materials HfxZr1–xNiSn0.99Sb0.01

Half‐Heusler n‐type thermoelectric materials MNiSn (M = Hf, Zr) have been shown to exhibit peak thermoelectric dimensionless figure‐of‐merit (ZT) of ～1.0 at 600–700 °C with a composition of Hf_0.75Zr_0.25NiSn_0.99Sb_0.01. This work demonstrates that it is possible to achieve the same ZT by reducing the concentration of the most expensive component Hf to one third of the previously reported best composition, i.e., Hf_0.25Zr_0.75NiSn_0.99Sb_0.01, which corresponds to an overall 50% reduction on material cost. The samples are prepared by ball milling the arc melted ingot and hot pressing the finely ground powders. The reduction of Hf concentration is crucial for such materials to be used in large‐scale waste heat recovery.     

New Na‐Ion Solid Electrolytes Na4−xSn1−xSbxS4 (0.02 ≤ x ≤ 0.33) for All‐Solid‐State Na‐Ion Batteries

Sulfide Na‐ion solid electrolytes (SEs) are key to enable room‐temperature operable all‐solid‐state Na‐ion batteries that are attractive for large‐scale energy storage applications. To date, few sulfide Na‐ion SEs have been developed and most of the SEs developed contain P and suffer from poor chemical stability. Herein, discovery of a new structural class of tetragonal Na_4?xSn_1?xSb_xS₄ (0.02 ≤ x ≤ 0.33) with space group I4₁/acd is described. The evolution of a new phase, distinctly different from Na₄SnS₄ or Na₃SbS₄, allows fast ionic conduction in 3D pathways (0.2–0.5 mS cm^?1 at 30 °C). Moreover, their excellent air stability and reversible dissolution in water and precipitation are highlighted. Specifically, TiS₂/Na–Sn all‐solid‐state Na‐ion batteries using Na_3.75Sn_0.75Sb_0.25S₄ demonstrates high capacity (201 mA h (g of TiS₂)^?1) with excellent reversibility.     

Low‐Temperature Solution‐Based Phosphorization Reaction Route to Sn4P3/Reduced Graphene Oxide Nanohybrids as Anodes for Sodium Ion Batteries

Different from previously reported mechanical alloying route to synthesize Sn _x P₃, novel Sn₄P₃/reduced graphene oxide (RGO) hybrids are synthesized for the first time through an in situ low‐temperature solution‐based phosphorization reaction route from Sn/RGO. Sn₄P₃ nanoparticles combining with advantages of high conductivity of Sn and high capacity of P are homogenously loaded on the RGO nanosheets, interconnecting to form 3D mesoporous architecture nanostructures. The Sn₄P₃/RGO hybrid architecture materials exhibit significantly improved electrochemical performance of high reversible capacity, high‐rate capability, and excellent cycling performance as sodium ion batteries (SIBs) anode materials, showing an excellent reversible capacity of 656 mA h g^?1 at a current density of 100 mA g^?1 over 100 cycles, demonstrating a greatly enhanced rate capability of a reversible capacity of 391 mA h g^?1 even at a high current density of 2.0 A g^?1. Moreover, Sn₄P₃/RGO SIBs anodes exhibit a superior long cycling life, delivering a high capacity of 362 mA h g^?1 after 1500 cycles at a high current density of 1.0 A g^?1. The outstanding cycling performance and rate capability of these porous hierarchical Sn₄P₃/RGO hybrid anodes can be attributed to the advantage of porous structure, and the synergistic effect between Sn₄P₃ nanoparticles and RGO nanosheets.     

Amphoteric Indium Enables Carrier Engineering to Enhance the Power Factor and Thermoelectric Performance in n‐Type AgnPb100InnTe100+2n (LIST)

The Ag and In co‐doped PbTe, Ag_nPb₁₀₀In_nTe_100+2n (LIST), exhibits n‐type behavior and features unique inherent electronic levels that induce self‐tuning carrier density. Results show that In is amphoteric in the LIST, forming both In³⁺ and In¹⁺ centers. Through unique interplay of valence fluctuations in the In centers and conduction band filling, the electron carrier density can be increased from ≈3.1 × 10¹⁸ cm^?3 at 323 K to ≈2.4 × 10¹⁹ cm^?3 at 820 K, leading to large power factors peaking at ≈16.0 µWcm^?1 K^?2 at 873 K. The lone pair of electrons from In⁺ can be thermally continuously promoted into the conduction band forming In³⁺, consistent with the amphoteric character of In. Moreover, with rising temperature, the Fermi level shifts into the conduction band, which enlarges the optical band gap based on the Moss–Burstein effect, and reduces bipolar diffusion and thermal conductivity. Adding extra Ag in LIST improves the electrical transport properties and meanwhile lowers the lattice thermal conductivity to ≈0.40 Wm^?1 K^?1. The addition of Ag creates spindle‐shaped Ag₂Te nanoprecipitates and atomic‐scale interstitials that scatter a broader set of phonons. As a result, a maximum ZT value ≈1.5 at 873 K is achieved in Ag₆Pb₁₀₀InTe₁₀₂ (LIST).     

Effect of different temperatures to remove reduction gas on the photoluminescence properties of Eu‐doped Li2(Ba1‐xSrx)SiO4 phosphors

In this study, Eu‐doped Li₂(Ba_1‐xSr_x)SiO₄ powders (x = 0, 0.2, 0.4, and 0.6) were synthesized at 850°C in a reduction atmosphere (5% H₂ + 95% N₂) for a duration of 1 h using a solid‐state reaction method. The reduction atmosphere was infused as the synthesis temperature reached 850°C, and was removed as the temperature dropped to 800–500°C. Li₂(Ba_1‐xSr_x)SiO₄ (or Li₂BaSiO₄), (Ba,Sr)₂SiO₄ (or BaSiO₄), and Li₄SiO₄ phases co‐existed in the synthesized Eu‐doped Li₂(Ba_1‐xSr_x)SiO₄ powders. A new finding was that the reduction atmosphere removing (RAR) temperature of the Li₂(Ba_1‐xSr_x)SiO₄ phosphors had a large effect on their photoluminescence excitation (PLE) and PL properties. Except for the 800°C‐RAR‐treated Li₂BaSiO₄ phosphor, PLE spectra of all other Li₂(Ba_1‐xSr_x)SiO₄ phosphors had one broad emission band with two emission peaks centred at ~242 and ~283 nm; these PL spectra had one broad emission band with one emission peak centred at 502–514 nm. We showed that the 800°C‐RAR‐treated Li₂BaSiO₄ phosphor emitted a red light and all other Li₂(Ba_1‐xSr_x)SiO₄ phosphors emitted a green light. Reasons for these results are discussed thoroughly.     

Thermoelectric Property Study of Nanostructured p‐Type Half‐Heuslers (Hf,Zr, Ti)CoSb0.8Sn0.2

Based on the best peak theromoelectric figure‐of‐merit value (ZT) of ca. 0.8 in Hf_0.5Zr_0.5CoSb_0.8Sn_0.2 and ca. 1 in Hf_0.8Ti_0.2CoSb_0.8Sn_0.2, the effect of Ti on thermoelectric properties is studied in (Hf, Zr, Ti)CoSb_0.8Sn_0.2, with the aim of further improving the ZT and reducing the usage of Hf. By either partial replacement of Hf and Zr with Ti in Hf_0.5Zr_0.5CoSb_0.8Sn_0.2 or partial replacement of Hf and Ti with Zr in Hf_0.8Ti_0.2CoSb_0.8Sn_0.2, a peak ZT of ≥1 is achieved at 800°C in Hf_0.44Zr_0.44Ti_0.12CoSb_0.8Sn_0.2. This composition has two advantages over the previous two best compositions: higher ZT than Hf_0.5Zr_0.5CoSb_0.8Sn_0.2 and less Hf than in Hf_0.8Ti_0.2CoSb_0.8Sn_0.2. A higher ZT with less Hf is very much desired since Hf is much more expensive than other constituent elements. The ZT improvement is the result of thermal conductivity reduction due to phonon scattering by both alloy and the nanostructure effect.     

Functional Graded Germanium–Lead Chalcogenide‐Based Thermoelectric Module for Renewable Energy Applications

High thermoelectric conversion efficiencies can be achieved by making use of materials with, as high as possible, figure of merit, ZT, values. Moreover, even higher performance is possible with appropriate geometrical optimization including the use of functionally graded materials (FGM) technology. Here, an advanced n‐type functionally graded thermoelectric material based on a phase‐separated (PbSn_0.05Te)_0.92(PbS)_0.08 matrix is reported. For assessment of the thermoelectric potential of this material, combined with the previously reported p‐type Ge_0.87Pb_0.13Te showing a remarkable dimensionless figure of merit of 2.2, a finite‐element thermoelectric model is developed. The results predict, for the investigated thermoelectric couple, a very impressive thermoelectric efficiency of 14%, which is more than 20% higher than previously reported values for operating under cold and hot junction temperatures of 50 °C and 500 °C, respectively. Validation of the model prediction is done by a thermoelectric couple fabricated according to the model's geometrical optimization conditions, showing a good agreement to the theoretically calculated results, hence approaching a higher technology readiness level.     

Enhancement of Thermoelectric Performance of n‐Type PbSe by Cr Doping with Optimized Carrier Concentration

Ti, V, Cr, Nb, and Mo are found to be effective at increasing the Seebeck coefficient and power factor of n‐type PbSe at temperatures below 600 K. It is found that the higher Seebeck coefficients and power factors are due to higher Hall mobility ≈1000 cm² V^?1s^?1 at lower carrier concentration. A larger average ZT value (relevant for applications) can be obtained by an optimization of carrier concentration to ≈10¹⁸–10¹⁹ cm^?3. Even though the highest room temperature power factor ≈3.3 × 10^?3 W m^?1 K^?2 is found in 1 at% Mo‐doped PbSe, the highest ZT is achieved in Cr‐doped PbSe. Combined with the lower thermal conductivity, ZT is improved to ≈0.4 at room temperature and peak ZTs of ≈1.0 are observed at ≈573 K for Pb_0.9925Cr_0.0075Se and ≈673 K for Pb_0.995Cr_0.005Se. The calculated device efficiency of Pb_0.995Cr_0.005Se is as high as ≈12.5% with cold side 300 K and hot side 873 K, higher than those of all the n‐type PbSe materials reported in the literature.     

Weak Electron Phonon Coupling and Deep Level Impurity for High Thermoelectric Performance Pb1−xGaxTe

High ZT of 1.34 at 766 K and a record high average ZT above 1 in the temperature range of 300‐864 K are attained in n‐type PbTe by engineering the temperature‐dependent carrier concentration and weakening electron–phonon coupling upon Ga doping. The experimental studies and first principles band structure calculations show that doping with Ga introduces a shallow level impurity contributing extrinsic carriers and imparts a deeper impurity level that ionizes at higher temperatures. This adjusts the carrier concentration closer to the temperature‐dependent optimum and thus maximizes the power factor in a wide temperature range. The maximum power factor of 35 µW cm⁻¹ K⁻² is achieved for the Pb_0.98Ga_0.02Te compound, and is maintained over 20 µWcm⁻¹ K⁻² from 300 to 767 K. Band structure calculations and X‐ray photoelectron spectroscopy corroborate the amphoteric role of Ga in PbTe as the origin of shallow and deep levels. Additionally, Ga doping weakens the electron–phonon coupling, leading to high carrier mobilities in excess of 1200 cm² V⁻¹ s⁻¹. Enhanced point defect phonon scattering yields a reduced lattice thermal conductivity. This work provides a new avenue, beyond the conventional shallow level doping, for further improving the average ZT in thermoelectric materials.