Low‐Temperature Solution‐Processed CuCrO2 Hole‐Transporting Layer for Efficient and Photostable Perovskite Solar Cells

Organic–inorganic hybrid perovskite solar cells (PVSCs) have become the front‐running photovoltaic technology nowadays and are expected to profoundly impact society in the near future. However, their practical applications are currently hampered by the challenges of realizing high performance and long‐term stability simultaneously. Herein, the development of inverted PVSCs is reported based on low temperature solution‐processed CuCrO₂ nanocrystals as a hole‐transporting layer (HTL), to replace the extensively studied NiO_x counterpart due to its suitable electronic structure and charge carrier transporting properties. A ≈45 nm thick compact CuCrO₂ layer is incorporated into an inverted planar configuration of indium tin oxides (ITO)/c‐CuCrO₂/perovskite/[6,6]‐phenyl‐C61‐butyric acid methyl ester (PCBM)/bathocuproine (BCP)/Ag, to result in the high steady‐state power conversion efficiency of 19.0% versus 17.1% for the typical low temperature solution‐processed NiO_x‐based devices. More importantly, the optimized CuCrO₂‐based device exhibits a much enhanced photostability than the reference device due to the greater UV light‐harvesting of the CuCrO₂ layer, which can efficiently prevent the perovskite film from intense UV light exposure to avoid associated degradation. The results demonstrate the promising potential of CuCrO₂ nanocrystals as an efficient HTL for realizing high‐performance and photostable inverted PVSCs.     

Investigating the Influence of Interfacial Contact Properties on Open Circuit Voltages in Organic Photovoltaic Performance: Work Function Versus Selectivity

The role of work function and thermodynamic selectivity of hole collecting contacts on the origin of open circuit voltage (V_OC) in bulk heterojunction organic photovoltaics is examined for poly(N‐9′‐heptadecanyl‐2,7‐carbazole‐alt‐5,5‐(4′,7′‐di‐2‐thienyl‐2′,1′,3′‐benzothiadiazole) (PCDTBT) and [6,6]‐phenyl‐C₇₁ butyric acid methyl ester (PC₇₁BM) solar cells. In the absence of a charge selective, electron blocking contact, systematic variation of the work function of the contact directly dictates the V_OC, as defined by the energetic separation between the relative Fermi levels for holes and electrons, with little change in the observed dark saturation current, J₀. Improving the charge selectivity of the contact through an increased barrier to electron injection from the fullerene in the blend into the hole contact results in a decreased reverse saturation current (decreased J₀ and increased shunt resistance, R_SH) and improved V_OC. Based on these observations, we provide a set of contact design criteria for tuning the V_OC in bulk heterojunction organic photovoltaics.     

Light‐Induced Degradation of Polymer:Fullerene Photovoltaic Devices: An Intrinsic or Material‐Dependent Failure Mechanism?

Although degradation mechanisms in organic photovoltaic devices continue to receive increased attention, it is only recently that the initial light‐induced failure, or so‐called burn‐in effect, has been considered. Both prototypical polythiophene:fullerene and polycarbazole:fullerene systems exhibit an exponential performance loss of ≈40% upon 150 h of continuous solar illumination. While the decrease in both the short‐circuit current (J_SC) and open‐circuit voltage (V_OC) is the origin of performance loss in poly(3‐hexylthiophene):[6,6]‐phenyl‐C61‐butyric acid methyl ester (P3HT:PC₆₀BM), in poly(N‐9′‐hepta‐decanyl‐2,7‐carbazole‐alt‐5,5‐(4′,7′‐di‐2‐thienyl‐2′,1′,3′‐benzothiadiazole)):[6,6]‐phenyl‐C71‐butyric acid methyl ester (PCDTBT:PC₇₀BM) the decline of the fill factor dominates. By systematic variation of the interface layers, active layer thickness, and acceptor in polythiophene:fullerene cells, the loss in J_SC is ascribed to a degradation in the bulk of the P3HT:PC₆₀BM, while the drop in V_OC is reversible and arises from charge trapping at the contact interfaces. By replacing the C₆₀ fullerene derivative with a C₇₀ derivative, or by modifying the electron transport layer, the J_SC or V_OC, respectively, are stabilized. These insights prove that the burn‐in process stems from multiple concurrent failure mechanisms. Comparing the ageing and recovery processes in P3HT and PCDTBT blends results in the conclusion that their interface failures differ in nature and that burn‐in is a material dependent, rather than an intrinsic, failure mechanism.     

High‐Performance Planar Perovskite Solar Cells Using Low Temperature,Solution–Combustion‐Based Nickel Oxide Hole Transporting Layer with Efficiency Exceeding 20%

NiO_x hole transporting layer has been extensively studied in optoelectronic devices. In this paper, the low temperature, solution–combustion‐based method is employed to prepare the NiO_x hole transporting layer. The resulting NiO_x thin films show better quality and preferable energy alignment with perovskite thin film compared to high temperature sol–gel‐processed NiO_x. With this, high‐performance perovskite solar cells are fabricated successfully with power conversion efficiency exceeding 20% using a modified two‐step prepared MA_1?yFA_yPbI_3?xCl_x perovskite. This efficiency value is among the highest values for NiO_x‐based devices. Various characterizations and analyses provide evidence of better film quality, enhanced charge transport and extraction, and suppressed charge recombination. Meanwhile, the device exhibits much better device stability compared to sol–gel‐processed NiO_x and poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate)‐based devices.     

Balanced Carrier Mobilities: Not a Necessary Condition for High‐Efficiency Thin Organic Solar Cells as Determined by MIS‐CELIV

A novel technique based upon injection‐charge extraction by linearly increasing voltage (i‐CELIV) in a metal‐insulator‐semiconductor (MIS) diode structure is described for studying charge transport in organic semiconductors. The technique (MIS‐CELIV) allows selective measurement of both electron and hole mobilities of organic solar cells with active layers thicknesses representative of operational devices. The method is used to study the model high efficiency bulk heterojunction combination poly[N‐9′′‐heptadecanyl‐2,7‐carbazole‐alt‐5,5‐(4′,7′‐di‐2‐thienyl‐2′,1′,3′‐benzothiadiazole)] (PCDTBT) and [6,6]‐phenyl C70‐butyric acid methyl ester (PC70BM) at various blend ratios. The absence of bipolar transport in PCDTBT‐and‐PC70BM‐only diodes is shown and strongly imbalanced carrier mobility is found in the most efficient “optimized” blend ratios. The mobility measurements are correlated with overall device performance and it is found that balanced and high charge carrier mobility are not necessarily required for high efficiencies in thin film organic solar cells.     

Electron‐Beam‐Evaporated Nickel Oxide Hole Transport Layers for Perovskite‐Based Photovoltaics

High‐quality charge carrier transport materials are of key importance for stable and efficient perovskite‐based photovoltaics. This work reports on electron‐beam‐evaporated nickel oxide (NiO_x) layers, resulting in stable power conversion efficiencies (PCEs) of up to 18.5% when integrated into solar cells employing inkjet‐printed perovskite absorbers. By adding oxygen as a process gas and optimizing the layer thickness, transparent and efficient NiO_x hole transport layers (HTLs) are fabricated, exhibiting an average absorptance of only 1%. The versatility of the material is demonstrated for different absorber compositions and deposition techniques. As another highlight of this work, all‐evaporated perovskite solar cells employing an inorganic NiO_x HTL are presented, achieving stable PCEs of up to 15.4%. Along with good PCEs, devices with electron‐beam‐evaporated NiO_x show improved stability under realistic operating conditions with negligible degradation after 40 h of maximum power point tracking at 75 °C. Additionally, a strong improvement in device stability under ultraviolet radiation is found if compared to conventional perovskite solar cell architectures employing other metal oxide charge transport layers (e.g., titanium dioxide). Finally, an all‐evaporated perovskite solar mini‐module with a NiO_x HTL is presented, reaching a PCE of 12.4% on an active device area of 2.3 cm².     

Impact of Hole Transport Layer Surface Properties on the Morphology of a Polymer‐Fullerene Bulk Heterojunction

Investigations on the impact of interfacial modification on organic optoelectronic device performance often attribute the improved device performance to the optoelectronic properties of the modifier. A critical assumption of such conclusions is that the organic active layer deposited on top of the modified surface (interface) remains unaltered. Here the validity of this assumption is investigated by examining the impact of substrate surface properties on the morphology of poly(3‐hexylthiophene):1‐(3‐methoxycarbonyl)‐propyl‐1‐phenyl‐[6,6]C₆₁ (P3HT:PCBM) bulk‐heterojunction (BHJ). A set of four nickel oxide and poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) hole transport layers (HTL) with contrasting surface properties and performance in organic photovoltaic (OPV) devices is studied. Differences in vertical composition variation and structural morphologies are observed across the samples, but only in the near‐interface region of <～20 nm. Near‐interface differences in morphology are most closely correlated with surface polarity and surface roughness of the HTL. Surface polarity is more influenced by surface composition than surface roughness and crystal structure. These findings corroborate the previously mentioned conclusions that the differences in device performance observed in solar cells employing these HTLs are dominated by the electronic properties of the HTL/organic photoactive active layer interface and not by unintentional alteration in the BHJ active layer morphology.     

Cesium Doped NiOx as an Efficient Hole Extraction Layer for Inverted Planar Perovskite Solar Cells

Organic–inorganic hybrid perovskite solar cells have resulted in tremendous interest in developing next generation photovoltaics due to high record efficiency exceeding 22%. For inverted structure perovskite solar cells, the hole extraction layers play a significant role in achieving efficient and stable perovskite solar cell by modifying charge extraction, interfacial recombination losses, and band alignment. Here, cesium doped NiO_x is selected as a hole extraction layer to study the impact of Cs dopant on the optoelectronic properties of NiO_x and the photovoltaic performance. Cs doped NiO_x films are prepared by a simple solution‐based method. Both doped and undoped NiO_x films are smooth and highly transparent, while the Cs doped NiO_x exhibits better electron conductivity and higher work function. Therefore, Cs doping results in a significant improvement in the performance of NiO_x‐based inverted planar perovskite solar cells. The best efficiency of Cs doped NiO_x devices is 19.35%, and those devices show high stability as well. The improved efficiency in devices with Cs:NiO_x is attributed to a significant improvement in the hole extraction and better band alignment compared to undoped NiO_x. This work reveals that Cs doped NiO_x is very promising hole extraction material for high and stable inverted perovskite solar cells.     

Effect of Photogenerated Dipoles in the Hole Transport Layer on Photovoltaic Performance of Organic–Inorganic Perovskite Solar Cells

Judicious choice of transport layer in organic–inorganic halide perovskite solar cells can be one of the essential parameters in photovoltaic design and fabrication techniques. This article reports the effect of optically generated dipoles in transport layer on the photovoltaic actions in active layer in perovskite solar cells with the architecture of indium tin oxide (ITO)/TiO _x /CH₃NH₃PbI_3–x Cl _x /hole transport layer (HTL)/Au. Here, PTB7‐thieno[3,4‐b]thiophene‐alt‐benzodithiophene and P3HT‐poly(3‐hexylthiophene) are separately used as the HTL with significant and negligible photoinduced dipoles, respectively. Electric field‐induced photoluminescence quenching provides the first‐hand evidence to indicate that the photoinduced dipoles are partially aligned in the amorphous PTB7 layer under the influence of device built‐in field. By monitoring the recombination process through magneto‐photocurrent measurements under device operation condition, it is shown that the photoinduced dipoles in PTB7 layer can decrease the recombination of photogenerated carriers in the active layer in perovskite solar cells. Furthermore, the capacitance measurements suggest that the photoinduced dipoles in PTB7 can decrease charge accumulation at the electrode interface. Therefore, the studies indicate the important role of photoinduced dipoles in the HTL on charge recombination dynamics and provide a fundamental insight on how the polarization in transport layer can influence the device performance in perovskite solar cells.     

Highly‐Tunable Nickel Cobalt Oxide as a Low‐Temperature P‐Type Contact in Organic Photovoltaic Devices

We report on the investigation of nickel cobalt oxide (Ni_xCo_3?xO₄) thin films grown by pulsed laser deposition as hole‐transport interlayers (HTL) in organic photovoltaic (OPV) devices. Films of 7 nm thickness were grown under various oxygen deposition pressures (pO₂) in the range of 2–200 mTorr. We explore both bulk and surface properties of these thin films. The workfunction (?) for each of the films was statistically similar (～4.7 eV), regardless of pO₂. There was not a strong dependence of the power conversion efficiency (η) on the conductivities of the HTLs varying between 0.009 ‐ 10 S/cm. The observed differences in OPV efficiencies (ranging from 1.16 to 2.46%) were correlated to the near surface chemical composition of the Ni_xCo_3?xO₄ HTL, as observed by differences in the relative surface hydroxyl concentration. The critical role of the near‐surface composition of the HTL at the HTL/organic interface was further explored by modifying the hydroxyl concentration using an oxygen plasma treatment. This treatment mitigated the impact of surface hydroxyl coverage, demonstrating either identical or increased values for ? and η, regardless of initial pO₂ in the creation of the Ni_xCo_3?xO₄ HTL. To further explore this we also employed a phosphonic acid surface modification agent on the HTL, increasing ? to 5.2 eV producing the best η value of 3.4%, equivalent to the PEDOT:PSS control devices. These results indicate that nickel cobalt oxide is a promising p‐type oxide for carrier‐selective interlayers in organic solar cells; however, for this to be fully realized the specific surface chemistry at the oxide/polymer interface must be controlled to increase ? and optimize device performance.     

Greatly Reduced Processing Temperature for a Solution‐Processed NiOx Buffer Layer in Polymer Solar Cells

By application of thermal annealing and UV ozone simultaneously, a solution‐processed NiO_x film can achieve a work function of approximately –5.1 eV at a temperature below 150 °C, which allows the processing of NiO_x that is compatible with fabrication of polymer solar cells (PSCs) on plastic substrates. The low processing temperature, which is greatly reduced from 250–400 °C to 150 °C, is attributed to the high concentration of NiOOH species on the film surface. This concentration will result in a large surface dipole and lead to increased work function. The pretreated NiO_x is demonstrated to be an efficient buffer layer in PSCs based on polymers with different highest occupied molecular orbital energy levels. Compared with conventional poly(3,4‐ethylenedioxy‐thiophene):poly(styrenesulfonate)‐buffered PSCs, the NiO_x‐buffered PSCs achieve similar or improved device performance as well as enhanced device stability.     

Germanium‐ and Silicon‐Substituted Donor–Acceptor Type Copolymers: Effect of the Bridging Heteroatom on Molecular Packing and Photovoltaic Device Performance

The effects of heteroatom substitution from a silicon atom to a germanium atom in donor‐acceptor type low band gap copolymers, poly[(4,4′‐bis(2‐ethylhexyl)dithieno[3,2‐b:2′,3′‐d]silole)‐2,6‐diyl‐alt‐(2,1,3‐benzothiadiazole)‐4,7‐diyl] (PSiBTBT) and poly[(4,4′‐bis(2‐ethylhexyl)dithieno[3,2‐b:2′,3′‐d]germole)‐2,6‐diyl‐alt‐(2,1,3‐benzothiadiazole)‐4,7‐diyl] (PGeBTBT), are studied. The optoelectronic and charge transport properties of these polymers are investigated with a particular focus on their use for organic photovoltaic (OPV) devices in blends with phenyl‐C₇₀‐butyric acid methyl ester (PC₇₀BM). It is found that the longer C‐Ge bond length, in comparison to C‐Si, modifies the molecular conformation and leads to a more planar chain conformation in PGeBTBT than PSiBTBT. This increase in molecular planarity leads to enhanced crystallinity and an increased preference for a face‐on backbone orientation, thus leading to higher charge carrier mobility in the diode configuration. These results provide important insight into the impact of the heavy atom substitution on the molecular packing and device performance of polymers based on the poly[2,6‐(4,4‐bis‐(2‐ethylhexyl)‐4H‐cyclopenta[2,1‐b;3,4‐b]‐dithiophene)‐alt‐4,7‐(2,1,3‐benzothiadiazole) (PCPDTBT) backbone.     

The Effect of PCBM Dimerization on the Performance of Bulk Heterojunction Solar Cells

Increasing the lifetime of polymer based organic solar cells is still a major challenge. Here, the photostability of bulk heterojunction solar cells based on the polymer poly[4,4′‐bis(2‐ethylhexyl)dithieno[3,2‐b:2′,3′‐d]silole)‐2,6‐diyl‐alt‐[2,5‐bis(3‐tetradecylthiophen‐2‐yl)thiazole[5,4‐d]thiazole)‐1,8‐diyl] (PDTSTzTz) and the fullerene [6,6]‐phenyl‐C₆₁‐butyric acid methyl ester (PC₆₀BM) under inert atmosphere is investigated. Correlation of electrical measurements on complete devices and UV‐vis absorption measurements as well as high‐performance liquid chromatography (HPLC) analysis on the active materials reveals that photodimerization of PC₆₀BM is responsible for the observed degradation. Simulation of the electrical device parameters shows that this dimerization results in a significant reduction of the charge carrier mobility. Both the dimerization and the associated device performance loss turn out to be reversible upon annealing. BisPC₆₀BM, the bis‐substituted analog of PC₆₀BM, is shown to be resistant towards light exposure, which in turn enables the manufacture of photostable PDTSTzTz:bisPC₆₀BM solar cells.     

Highly Efficient and Stable Perovskite Solar Cells Using a Dopant‐Free Inexpensive Small Molecule as the Hole‐Transporting Material

The hole transporting layer (HTL) plays an important role in realizing efficient and stable perovskite solar cells (PSCs). In spite of intensive research efforts toward the development of HTL materials, low‐cost, dopant‐free hole transporting materials that lead to efficient and stable PSCs remain elusive. Herein, a simple polycyclic heteroaromatic hydrocarbon‐based small molecule, 2,5,9,12‐tetra(tert‐butyl)diacenaphtho[1,2‐b:1′,2′‐d]thiophenen, as an efficient HTL material in PSCs is presented. This molecule is easy to synthesize and inexpensive. It is hydrophobic and exhibits excellent film‐forming properties on perovskites. It has unusually high hole mobility and a desirable highest occupied molecular orbital energy level, making it an ideal HTL material. PSCs fabricated using both the n‐i‐p planar and mesoscopic architectures with this compound as the HTL show efficiencies as high as 15.59% and 18.17%, respectively, with minimal hysteresis and high long term stability under ambient conditions.     

How Photoinduced Crosslinking Under Operating Conditions Can Reduce PCDTBT‐Based Solar Cell Efficiency and then Stabilize It

Bulk heterojunction (BHJ) photovoltaic devices made of PCDTBT (poly[N‐9′‐hepta‐decanyl‐2,7‐carbazole‐alt‐5,5‐(4′,7′‐di‐2‐thienyl‐2′,1′,3′‐benzothiadiazole)]) and PC₇₀BM ([6,6]‐phenyl‐C₇₀‐butyric acid methyl ester) are among the most efficient and stable devices studied so far. However, during a short regime called “burn‐in”, a significant decrease of power conversion efficiency was observed. A study of the photochemical mechanisms involved in the PCDTBT:PCBM active layer exposed to light in encapsulated systems is presented. It is found that the photochemical reactions resulting from the absorption of light by PCDTBT involve crosslinking between the 2,7 carbazole unit of PCDTBT and the fullerene unit of PCBM. Those reactions stabilize the BHJ by avoiding the formation of microsized PCBM crystals known to cause failure of BHJ solar cells. Using classical electron paramagnetic resonance spectroscopy (EPR) (without illumination), paramagnetic defects along the polymer chains have been detected. The kinetics of defects intensity show a burn‐in trend. The evolution of their relaxation times upon aging is in good agreement with a structural change (crosslinking) of the BHJ observed from the nanomechanical properties. Finally, light‐induced electron paramagnetic resonance (LEPR) measurements performed on aged samples revealed that electron transfer is not significantly affected upon aging, confirming thus the stabilization of the BHJ in solar cell operating conditions.     

In Situ Formation of MoO3 in PEDOT:PSS Matrix: A Facile Way to Produce a Smooth and Less Hygroscopic Hole Transport Layer for Highly Stable Polymer Bulk Heterojunction Solar Cells

A solution‐processed neutral hole transport layer is developed by in situ formation of MoO₃ in aqueous PEDOT:PSS dispersion (MoO₃‐PEDOT:PSS). This MoO₃‐PEDOT:PSS composite film takes advantage of both the highly conductive PEDOT:PSS and the ambient conditions stability of MoO₃; consequently it possesses a smooth surface and considerably reduced hygroscopicity. The resulting bulk heterojunction polymer solar cells (BHJ PSC) based on poly[2,3‐bis‐(3‐octyloxyphenyl)quinoxaline‐5,8‐diyl‐alt‐thiophene‐2,5‐diyl] (TQ1):[6,6]‐phenyl‐C₇₁‐butyric acid methyl ester (PC₇₀BM) blends using MoO₃‐PEDOT:PSS composite film as hole transport layer (HTL) show considerable improvement in power conversion efficiency (PCE), from 5.5% to 6.4%, compared with the reference pristine PEDOT:PSS‐based device. More importantly, the device with MoO₃‐PEDOT:PSS HTL shows considerably improved stability, with the PCE remaining at 80% of its original value when stored in ambient air in the dark for 10 days. In comparison, the reference solar cell with PEDOT:PSS layer shows complete failure within 10 days. This MoO₃‐PEDOT:PSS implies the potential for low‐cost roll‐to‐roll fabrication of high‐efficiency polymer solar cells with long‐term stability at ambient conditions.     

Overcoming Interfacial Losses in Solution‐Processed Organic Multi‐Junction Solar Cells

Organic solar cells are promising in terms of full‐solution‐processing which enables low‐cost and large‐scale fabrication. While single‐junction solar cells have seen a boost in power conversion efficiency (PCE), multi‐junction solar cells are promising to further enhance the PCE. In all‐solution‐processed multi‐junction solar cells, interfacial losses are often encountered between hole‐transporting layer (HTL) and the active layers and therefore greatly limit the application of newly developed high‐performance donor and acceptor materials in multi‐junction solar cells. Here, the authors report on a systematic study of interface losses in both single‐junction and multi‐junction solar cells based on representative polymer donors and HTLs using electron spectroscopy and time‐of‐flight secondary ion mass spectrometry. It is found that a facile mixed HTL containing poly(3,4‐ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) and MoO _x nanoparticles successfully overcomes the interfacial losses in both single‐ and multi‐junction solar cells based on various active layers by reducing interface protonation, promoting better energy‐level alignment, and forming a dense and smooth layer. Solution‐processed single‐junction solar cells are demonstrated to reach the same performance as with evaporated MoO _x (over 7%). Multi‐junction solar cells with polymers containing nitrogen atoms as the first layer and the mixed PEDOT:PSS and MoO _x nanoparticles as hole extraction layer reach fill factor (FF) of over 60%, and PCE of over 8%, while the identical stack with pristine PEDOT:PSS or MoO _x nanoparticles show FF smaller than 50% and PCE less than 5%.     

Enhanced Photovoltaic Performance of Amorphous Donor–Acceptor Copolymers Based on Fluorine‐Substituted Benzodioxocyclohexene‐Annelated Thiophene

Donor–acceptor (D‐A) type π‐conjugated copolymers with crystalline behavior have been extensively investigated as donor semiconductors in organic photovoltaics (OPVs). On the other hand, the development of high‐performance amorphous donor materials is still behind. The amorphous donor copolymer DTS‐C₀(F₂) consisting of dithieno[3,2‐b:2′,3′‐d]silole ( DTS ) donor unit and the recently developed fluorine‐substituted naphtho[2,3‐c]thiophene‐4,9‐dione ( C₀(F₂) ) acceptor unit shows moderate photovoltaic performance upon blending with PC₇₁BM. In this work, to enhance the hole‐transporting characteristics, a 3‐hexylthiophene ( HT ) spacer unit is integrated into the conjugated backbone, resulting in a new amorphous copolymer DTS‐HT‐C₀(F₂) . The strong electron‐accepting nature of C₀(F₂) allows the introduction of the HT spacer without affecting the frontier orbital energies and thus the D‐A character. Without using solvent additives and thermal annealing, OPVs based on DTS‐HT‐C₀(F₂) and [6,6]‐phenyl‐C71‐butyric acid methyl ester PC₇₁BM show an improved power conversion efficiency of 9.12%. Investigation of the device physics unambiguously reveals that the hole mobility of the copolymer in the blend is increased by an order of magnitude by the introduction of HT , while keeping an amorphous film nature, leading to higher short‐circuit current density and fill factor. These results demonstrate the realization of high‐performance OPVs based on amorphous active layers.     

New Strategy for Two‐Step Sequential Deposition: Incorporation of Hydrophilic Fullerene in Second Precursor for High‐Performance p‐i‐n Planar Perovskite Solar Cells

In p‐i‐n planar perovskite solar cells (pero‐SCs) based on methylammonium lead iodide (MAPbI₃) perovskite, high‐quality MAPbI₃ film, perfect interfacial band alignment and efficient charge extracting ability are critical for high photovoltaic performance. In this work, a hydrophilic fullerene derivative [6,6]‐phenyl‐C₆₁‐butyric acid‐(3,4,5‐tris(2‐(2‐(2‐methoxyethoxy)ethoxy)ethoxy)phenyl)methanol ester (PCBB‐OEG) is introduced as additive in the methylammonium iodide precursor solution in the preparation of MAPbI₃ perovskite film by two‐step sequential deposition method, and obtained a top‐down gradient distribution with an ultrathin top layer of PCBB‐OEG. Meanwhile, a high‐quality perovskite film with high crystallinity, less trap‐states, and dense‐grained uniform morphology can well grow on both hydrophilic (poly(3,4‐ethylenedioxythiophene)/poly(styrenesulfonic acid)) and hydrophobic (polytriarylamine, PTAA) hole transport layers. When the PCBB‐OEG‐containing perovskite film (pero‐0.1) is prepared in a p‐i‐n planar pero‐SC with the configuration of ITO/PTAA/pero‐0.1/[6,6]‐phenyl‐C₆₁‐butyric acid methyl ester/Al, the device delivers a promising power conversion efficiency (PCE) of 20.2% without hysteresis, which is one of the few PCE over 20% for the p‐i‐n planar pero‐SCs. Importantly, the pero‐0.1‐based device shows an excellent stability that can retain 98.4% of its initial PCE after being exposed for 300 h under ambient atmosphere with a high humidity, and the flexible pero‐SCs based on pero‐0.1 also demonstrate a promising PCE of 18.1%.     

Stability of Nonfullerene Organic Solar Cells: from Built‐in Potential and Interfacial Passivation Perspectives

Remarkable progress has been made in the development of high‐efficiency solution‐processable nonfullerene organic solar cells (OSCs). However, the effect of the vertical stratification of bulk heterojunction (BHJ) on the efficiency and stability of nonfullerene OSCs is not fully understood yet. In this work, we report our effort to understand the stability of nonfullerene OSCs, made with the binary blend poly[(2,6‐(4, 8‐bis(5‐(2‐ethylhexyl)thiophen‐2‐yl)‐benzo[1,2‐b:4,5‐b′]dithiophene))‐alt‐(5,5‐(1′,3′‐di‐2‐thienyl‐5′,7′‐bis(2‐ethylhexyl)benzo[1′,2′‐c:4′,5′‐c′] dithiophene‐4,8‐dione)] (PBDB‐T):3,9‐ bis(2‐methylene‐(3‐(1,1‐dicyanomethylene)‐indanone))‐5,5,11,11‐tetrakis(4‐hexylphenyl)‐ dithieno[2,3‐d:2′,3′‐d′]‐s‐indaceno[1,2‐b:5,6‐b′] dithiophene (ITIC) system. It shows that a continuous vertical phase separation process occurs, forming a PBDB‐T‐rich top surface and an ITIC‐rich bottom surface in PBDB‐T:ITIC BHJ during the aging period. A gradual decrease in the built‐in potential (V₀) in the regular configuration PBDB‐T:ITIC OSCs, due to the interfacial reaction between the poly(3,4‐ethylenedioxythiophene)‐poly(styrenesulfonate) (PEDOT:PSS) hole transporting layer and ITIC acceptor, is one of the reasons responsible for the performance deterioration. The reduction in V₀, caused by an inevitable reaction at the ITIC/PEDOT:PSS interface in the OSCs, can be suppressed by introducing a MoO₃ interfacial passivation layer. Retaining a stable and high V₀ across the BHJ through interfacial modification and device engineering, e.g., as seen in the inverted PBDB‐T:ITIC OSCs, is a prerequisite for efficient and stable operation of nonfullerene OSCs.