Kinetically Controlled Growth of Phase‐Pure SnS Absorbers for Thin Film Solar Cells: Achieving Efficiency Near 3% with Long‐Term Stability Using an SnS/CdS Heterojunction

Facile control over the morphology of phase pure tin monosulfide (SnS) thin films, a promising future absorber for thin film solar cells, is enabled by controlling the growth kinetics in vapor transport deposition of congruently evaporated SnS. The pressure during growth is found to be a key factor in modifying the final shape of the SnS grains. The optimized cube‐like SnS shows p‐type with the apparent carrier concentration of ≈10¹⁷ cm^?3 with an optical bandgap of 1.32 eV. The dense and flat surface morphology of 1 µm thick SnS combined with the minimization of pinholes directly leads to improved diode quality and increased shunt resistance of the SnS/CdS heterojunction (cell area of 0.30 cm²). An open‐circuit voltage of up to 0.3068 V is achieved, which is independently characterized at the Korea Institute of Energy Research (KIER). Detailed high‐resolution transmission electron microscopy analysis confirms the absence of detrimental secondary phases such as Sn₂S₃ or SnS₂ in the SnS grains or at intergrain boundaries. The initial efficiency level of 98.5% is maintained even after six months of storage in air, and the final efficiency of the champion SnS/CdS cell, certified at the KIER, is 2.938% with an open‐circuit voltage of 0.2912 V.     

Studies on Thermoelectric Properties of n‐type Polycrystalline SnSe1‐xSx by Iodine Doping

Iodine‐doped n‐type SnSe polycrystalline by melting and hot pressing is prepared. The prepared material is anisotropic with a peak ZT of ≈0.8 at about 773 K measured along the hot pressing direction. This is the first report on thermoelectric properties of n‐type Sn chalcogenide alloys. With increasing content of iodine, the carrier concentration changed from 2.3 × 10¹⁷ cm^?3 (p‐type) to 5.0 × 10¹⁵ cm^?3 (n‐type) then to 2.0 × 10¹⁷ cm^?3 (n‐type). The decent ZT is mainly attributed to the intrinsically low thermal conductivity due to the high anharmonicity of the chemical bonds like those in p‐type SnSe. By alloying with 10 at% SnS, even lower thermal conductivity and an enhanced Seebeck coefficient were achieved, leading to an increased ZT of ≈1.0 at about 773 K measured also along the hot pressing direction.     

Sodium‐Doped Tin Sulfide Single Crystal: A Nontoxic Earth‐Abundant Material with High Thermoelectric Performance

Lead‐free tin sulfide (SnS), with an analogous structure to SnSe, has attracted increasing attention because of its theoretically predicted high thermoelectric performance. In practice, however, polycrystalline SnS performs rather poorly as a result of its low power factor. In this work, bulk sodium (Na)‐doped SnS single crystals are synthesized using a modified Bridgman method and a detailed transport evaluation is conducted. The highest zT value of ≈1.1 is reached at 870 K in a 2 at% Na‐doped SnS single crystal along the b‐axis direction, in which high power factors (2.0 mW m^?1 K^?2 at room temperature) are realized. These high power factors are attributed to the high mobility associated with the single crystalline nature of the samples as well as to the enhanced carrier concentration achieved through Na doping. An effective single parabolic band model coupled with first‐principles calculations is used to provide theoretical insight into the electronic transport properties. This work demonstrates that SnS‐based single crystals composed of earth‐abundant, low‐cost, and nontoxic chemical elements can exhibit high thermoelectric performance and thus hold potential for application in the area of waste heat recovery.     

Bringing Conducting Polymers to High Order: Toward Conductivities beyond 105 S cm−1 and Thermoelectric Power Factors of 2 mW m−1 K−2

Here, an effective design strategy of polymer thermoelectric materials based on structural control in doped polymer semiconductors is presented. The strategy is illustrated for two archetypical polythiophenes, e.g., poly(2,5‐bis(3‐dodecyl‐2‐thienyl)thieno[3,2‐b]thiophene) (C₁₂‐PBTTT) and regioregular poly(3‐hexylthiophene) (P3HT). FeCl₃ doping of aligned films results in charge conductivities up to 2 × 10⁵ S cm^?1 and metallic‐like thermopowers similar to iodine‐doped polyacetylene. The films are almost optically transparent and show strongly polarized near‐infrared polaronic bands (dichroic ratio >10). The comparative study of structure–property correlations in P3HT and C₁₂‐PBTTT identifies three conditions to obtain conductivities beyond 10⁵ S cm^?1: i) achieve high in‐plane orientation of conjugated polymers with high persistence length; ii) ensure uniform chain oxidation of the polymer backbones by regular intercalation of dopant molecules in the polymer structure without disrupting alignment of π‐stacked layers; and iii) maintain a percolating nanomorphology along the chain direction. The highly anisotropic conducting polymer films are ideal model systems to investigate the correlations between thermopower S and charge conductivity σ. A scaling law S ∝ σ^?1/4 prevails along the chain direction, but a different S ∝ ?ln(σ) relation is observed perpendicular to the chains, suggesting different charge transport mechanisms. The simultaneous increase of charge conductivity and thermopower along the chain direction results in a substantial improvement of thermoelectric power factors up to 2 mW m^?1 K^?2 in C₁₂‐PBTTT.     

Engineering Electronic Structure of Stannous Sulfide by Amino‐Functionalized Carbon: Toward Efficient Electrocatalytic Reduction of CO2 to Formate

Engineering electronic structure to enhance the binding energies of reaction intermediates in order to achieve a high partial current density can lead to increased yield of target products. Herein, amino‐functionalized carbon is used to regulate the electronic structure of tin‐based catalysts to enhance activity of CO₂ electroreduction. The hollow nanotubes composed of SnS (stannous sulfide) nanosheets are modified with amino‐functionalized carbon layers, achieving a highest formate Faraday efficiency of 92.6% and a remarkable formate partial current density of 41.1 mA cm^?2 (a total current density of 52.1 mA cm^?2) at a moderate overpotential of 0.9 V versus reversible hydrogen electrode, as well as a good stability. Density functional theory calculations demonstrate that the superior activity is attributed to the synergistic effect among SnS and Aminated‐C in increasing the adsorption energies of the key intermediates and accelerating the charge transfer rate.     

Balancing Light Absorption and Charge Transport in Vertical SnS2 Nanoflake Photoanodes with Stepped Layers and Large Intrinsic Mobility

Significant optical absorption in the blue–green spectral range, high intralayer carrier mobility, and band alignment suitable for water splitting suggest tin disulfide (SnS₂) as a candidate material for photo‐electrochemical applications. In this work, vertically aligned SnS₂ nanoflakes are synthesized directly on transparent conductive substrates using a scalable close space sublimation (CSS) method. Detailed characterization by time‐resolved terahertz and time‐resolved photoluminescence spectroscopies reveals a high intrinsic carrier mobility of 330 cm² V^?1 s^?1 and photoexcited carrier lifetimes of 1.3 ns in these nanoflakes, resulting in a long vertical diffusion length of ≈1 µm. The highest photo‐electrochemical performance is achieved by growing SnS₂ nanoflakes with heights that are between this diffusion length and the optical absorption depth of ≈2 µm, which balances the competing requirements of charge transport and light absorption. Moreover, the unique stepped morphology of these CSS‐grown nanoflakes improves photocurrent by exposing multiple edge sites in every nanoflake. The optimized vertical SnS₂ nanoflake photoanodes produce record photocurrents of 4.5 mA cm^?2 for oxidation of a sulfite hole scavenger and 2.6 mA cm^?2 for water oxidation without any hole scavenger, both at 1.23 V_RHE in neutral electrolyte under simulated AM1.5G sunlight, and stable photocurrents for iodide oxidation in acidic electrolyte.     

Highly Reproducible Sn‐Based Hybrid Perovskite Solar Cells with 9% Efficiency

The low power conversion efficiency (PCE) of tin‐based hybrid perovskite solar cells (HPSCs) is mainly attributed to the high background carrier density due to a high density of intrinsic defects such as Sn vacancies and oxidized species (Sn⁴⁺) that characterize Sn‐based HPSCs. Herein, this study reports on the successful reduction of the background carrier density by more than one order of magnitude by depositing near‐single‐crystalline formamidinium tin iodide (FASnI₃) films with the orthorhombic a‐axis in the out‐of‐plane direction. Using these highly crystalline films, obtained by mixing a very small amount (0.08 m ) of layered (2D) Sn perovskite with 0.92 m (3D) FASnI₃, for the first time a PCE as high as 9.0% in a planar p–i–n device structure is achieved. These devices display negligible hysteresis and light soaking, as they benefit from very low trap‐assisted recombination, low shunt losses, and more efficient charge collection. This represents a 50% improvement in PCE compared to the best reference cell based on a pure FASnI₃ film using SnF₂ as a reducing agent. Moreover, the 2D/3D‐based HPSCs show considerable improved stability due to the enhanced robustness of the perovskite film compared to the reference cell.     

Highly Stable Transparent Conductive Silver Grid/PEDOT:PSS Electrodes for Integrated Bifunctional Flexible Electrochromic Supercapacitors

Silver grids are attractive for replacing indium tin oxide as flexible transparent conductors. This work aims to improve the electrochemical stability of silver‐based transparent conductors. A silver grid/PEDOT:PSS hybrid film with high conductivity and excellent stability is successfully fabricated. Its functionality for flexible electrochromic applications is demonstrated by coating one layer of WO₃ nanoparticles on the silver grid/PEDOT:PSS hybrid film. This hybrid structure presents a large optical modulation of 81.9% at 633 nm, fast switching, and high coloration efficiency (124.5 cm² C^?1). More importantly, an excellent electrochemical cycling stability (sustaining 79.1% of their initial transmittance modulation after 1000 cycles) and remarkable mechanical flexibility (optical modulation decay of only 7.5% after 1200 compressive bending cycles) is achieved. A novel smart supercapacitor is presented that functions as a regular energy‐storage device and simultaneously monitors the level of stored energy by a rapid and reversible color variation even at high current charge/discharge conditions. The film sustains an optical modulation of 87.7% and a specific capacitance of 67.2% at 10 A g^?1 compared to their initial value at a current density of 1 A g^?1. The high‐performance silver grid/PEDOT:PSS hybrid transparent films exhibit promising features for various emerging flexible electronics and optoelectronic devices.     

Overcoming Efficiency Limitations of SnS‐Based Solar Cells

Thin‐film solar cells are made by vapor deposition of Earth‐abundant materials: tin, zinc, oxygen and sulfur. These solar cells had previously achieved an efficiency of about 2%, less than 1/10 of their theoretical potential. Loss mechanisms are systematically investigated and mitigated in solar cells based on p‐type tin monosulfide, SnS, absorber layers combined with n‐type zinc oxysulfide, Zn(O,S) layers that selectively transmit electrons, but block holes. Recombination at grain boundaries is reduced by annealing the SnS films in H₂S to form larger grains with fewer grain boundaries. Recombination near the p‐SnS/n‐Zn(O,S) junction is reduced by inserting a few monolayers of SnO₂ between these layers. Recombination at the junction is also reduced by adjusting the conduction band offset by tuning the composition of the Zn(O,S), and by reducing its free electron concentration with nitrogen doping. The resulting cells have an efficiency over 4.4%, which is more than twice as large as the highest efficiency obtained previously by solar cells using SnS absorber layers.     

Scalable Water‐Based Production of Highly Conductive 2D Nanosheets with Ultrahigh Volumetric Capacitance and Rate Capability

Highly conductive and ultrathin 2D nanosheets are of importance for the development of portable electronics and electric vehicles. However, scalable production and rational design for highly electronic and ionic conductive 2D nanosheets still remain a challenge. Herein, an industrially adoptable fluid dynamic exfoliation process is reported to produce large quantities of ionic liquid (IL)‐functionalized metallic phase MoS₂ (m‐MoS₂) and defect‐free graphene (Gr) sheets. Hybrid 2D–2D layered films are also fabricated by incorporating Gr sheets into compact m‐MoS₂ films. The incorporated IL functionalities and Gr sheets prevent aggregation and restacking of the m‐MoS₂ sheets, thereby creating efficient and rapid ion and electron pathways in the hybrid films. The hybrid film with a high packing density of 2.02 g cm^?3 has an outstanding volumetric capacitance of 1430.5 F cm^?3 at 1 A g^?1 and an extremely high rate capability of 80% retention at 1000 A g^?1. The flexible supercapacitor assembled using a polymer‐gel electrolyte exhibits excellent resilience to harsh electrochemical and mechanical conditions while maintaining an impressive rate performance and long cycle life. Successful achievement of an ultrahigh volumetric energy density (1.14 W h cm^?3) using an organic electrolyte with a wide cell voltage of ≈3.5 V is demonstrated.     

Thin‐Film Solar Cells with InP Absorber Layers Directly Grown on Nonepitaxial Metal Substrates

The design and performance of solar cells based on InP grown by the nonepitaxial thin‐film vapor–liquid–solid (TF‐VLS) growth technique is investigated. The cell structure consists of a Mo back contact, p‐InP absorber layer, n‐TiO₂ electron selective contact, and indium tin oxide transparent top electrode. An ex situ p‐doping process for TF‐VLS grown InP is introduced. Properties of the cells such as optoelectronic uniformity and electrical behavior of grain boundaries are examined. The power conversion efficiency of first generation cells reaches 12.1% under simulated 1 sun illumination with open‐circuit voltage (V_OC) of 692 mV, short‐circuit current (J_SC) of 26.9 mA cm^?2, and fill factor (FF) of 65%. The FF of the cell is limited by the series resistances in the device, including the top contact, which can be mitigated in the future through device optimization. The highest measured V_OC under 1 sun is 692 mV, which approaches the optically implied V_OC of ≈795 mV extracted from the luminescence yield of p‐InP.     

Ultrasmall Nanoplatelets: The Ultimate Tuning of Optoelectronic Properties

2D semiconducting nanoplatelets (NPLs) are an emerging class of photoactive materials. They can be used as building blocks in optoelectronic devices thanks to their large absorption coefficient, high carrier mobility, and unique thickness‐dependent optical transitions. The main drawback of NPLs is their large lateral size, which results in unfavorable band energy levels and low quantum yield (QY). Here, ultrasmall lead chalcogenide PbSe_1–x S_x NPLs are prepared, which exhibit an unprecedented QY of ≈60%, the highest ever reported for this structure. The NPLs are applied as light absorber in a photoelectrochemical system, leading to a saturated photocurrent density of ≈5.0 mA cm^?2 (44 mL cm^?2 d^?1), which is a record for NPL‐based photoelectrodes in solar‐driven hydrogen generation. Ultrasmall NPLs hold the potential for breakthrough developments in the field of optically active nanomaterials.     

Dual‐Functional N Dopants in Edges and Basal Plane of MoS2 Nanosheets Toward Efficient and Durable Hydrogen Evolution

Herein, the authors explicitly reveal the dual‐functions of N dopants in molybdenum disulfide (MoS₂) catalyst through a combined experimental and first‐principles approach. The authors achieve an economical, ecofriendly, and most efficient MoS₂‐based hydrogen evolution reaction (HER) catalyst of N‐doped MoS₂ nanosheets, exhibiting an onset overpotential of 35 mV, an overpotential of 121 mV at 100 mA cm^?2 and a Tafel slope of 41 mV dec^?1. The dual‐functions of N dopants are (1) activating the HER catalytic activity of MoS₂ S‐edge and (2) enhancing the conductivity of MoS₂ basal plane to promote rapid charge transfer. Comprehensive electrochemical measurements prove that both the amount of active HER sites and the conductivity of N‐doped MoS₂ increase as a result of doping N. Systematic first‐principles calculations identify the active HER sites in N‐doped MoS₂ edges and also illustrate the conducting charges spreading over N‐doped basal plane induced by strong Mo 3d –S 2p –N 2p hybridizations at Fermi level. The experimental and theoretical research on the efficient HER catalysis of N‐doped MoS₂ nanosheets possesses great potential for future sustainable hydrogen production via water electrolysis and will stimulate further development on nonmetal‐doped MoS₂ systems to bring about novel high‐performance HER catalysts.     

Aqueous Solution‐Processable Small Molecular Metal‐Chelate Complex Electrolyte for Flexible All‐Solid State Energy Storage Devices

A small molecular metal‐chelate complex, tris(8‐hydroxyquinoline‐5‐sulfonic acid) aluminum (AlQSA₃), that has three sulfonic acid groups per molecule leading to an excellent solubility in water is reported as a liquid‐free perfect solid‐state electrolyte for flexible film‐type all‐solid‐state energy storage devices. The AlQSA₃ material is synthesized by one‐step reaction of aluminum triisopropoxide and 8‐hydroxyquinoline‐5‐sulfonic acid. The aqueous solutions of AlQSA₃ are applied to fabricate flexible film‐type all‐solid state electric double layer capacitors with indium‐tin oxide thin film electrodes. The ion conductivity of the AlQSA₃ film reaches 0.116 mS cm^?1, while a pronounced hysteresis are obtained in the cyclic voltammetry measurement. The AlQSA₃ film capacitors exhibit an output voltage of 1.5 V at 20 μA cm^?2, which is considerably stable by the repeated operation. In particular, the peak output voltage is well kept even after 180° bending for 500 times in the case of the flexible AlQSA₃ film capacitors.     

Enhancement of Thermoelectric Performance of n‐Type PbSe by Cr Doping with Optimized Carrier Concentration

Ti, V, Cr, Nb, and Mo are found to be effective at increasing the Seebeck coefficient and power factor of n‐type PbSe at temperatures below 600 K. It is found that the higher Seebeck coefficients and power factors are due to higher Hall mobility ≈1000 cm² V^?1s^?1 at lower carrier concentration. A larger average ZT value (relevant for applications) can be obtained by an optimization of carrier concentration to ≈10¹⁸–10¹⁹ cm^?3. Even though the highest room temperature power factor ≈3.3 × 10^?3 W m^?1 K^?2 is found in 1 at% Mo‐doped PbSe, the highest ZT is achieved in Cr‐doped PbSe. Combined with the lower thermal conductivity, ZT is improved to ≈0.4 at room temperature and peak ZTs of ≈1.0 are observed at ≈573 K for Pb_0.9925Cr_0.0075Se and ≈673 K for Pb_0.995Cr_0.005Se. The calculated device efficiency of Pb_0.995Cr_0.005Se is as high as ≈12.5% with cold side 300 K and hot side 873 K, higher than those of all the n‐type PbSe materials reported in the literature.     

Realizing Reversible Conversion‐Alloying of Sb(V) in Polyantimonic Acid for Fast and Durable Lithium‐ and Potassium‐Ion Storage

Finding suitable electrode materials for alkali‐metal‐ion storage is vital to the next‐generation energy‐storage technologies. Polyantimonic acid (PAA, H₂Sb₂O₆ · nH₂O), having pentavalent antimony species and an interconnected tunnel‐like pyrochlore crystal framework, is a promising high‐capacity energy‐storage material. Fabricating electrochemically reversible PAA electrode materials for alkali‐metal‐ion storage is a challenge and has never been reported due to the extremely poor intrinsic electronic conductivity of PAA associated with the highest oxidation state Sb(V). Combining nanostructure engineering with a conductive‐network construction strategy, here is reported a facile one‐pot synthesis protocol for crafting uniform internal‐void‐containing PAA nano‐octahedra in a composite with nitrogen‐doped reduced graphene oxide nanosheets (PAA?N‐RGO), and for the first time, realizing the reversible storage of both Li⁺ and K⁺ ions in PAA?N‐RGO. Such an architecture, as validated by theoretical calculations and ex/in situ experiments, not only fully takes advantage of the large‐sized tunnel transport pathways (0.37 nm²) of PAA for fast solid‐phase ionic diffusion but also leads to exponentially increased electrical conductivity (3.3 S cm^?1 in PAA?N‐RGO vs 4.8 × 10^?10 S cm^?1 in bare‐PAA) and yields an inside‐out buffer function for accommodating volume expansion. Compared to electrochemically irreversible bare‐PAA, PAA?N‐RGO manifests reversible conversion‐alloying of Sb(V) toward fast and durable Li⁺‐ and K⁺‐ion storage.     

Charge Transport Anisotropy in Highly Oriented Thin Films of the Acceptor Polymer P(NDI2OD‐T2)

The nanomorphology of the high mobility polymer poly{[N,N′‐bis(2‐octyldodecyl)‐1,4,5,8‐naphthalenedicarboximide‐2,6‐diyl]‐alt‐5,5′‐(2,2′‐bithiophene)} P(NDI2OD‐T2) in thin films is explored as a function of different annealing conditions and correlated to optical and electrical properties. While nanofibrils with face‐on orientation in form I are obtained directly after spin‐coating and annealing below the melt transition temperature, clear evidence of lamellar structures is found after melt‐annealing followed by slow cooling to room temperature. Interestingly these structural changes are accompanied by distinct changes in the absorption patterns. Electron diffraction measurements further show clear transitions towards predominant edge‐on oriented chains in form II upon melt‐annealing. Large‐scale alignment with dichroic ratios up to 10 and improved order is achieved by high temperature rubbing and subsequent post‐rubbing annealing. These highly oriented morphologies allow anisotropic in‐plane charge transport to be probed with top‐gate transistors parallel and perpendicular to the polymer chain direction. Mobilities up to 0.1 cm² V^‐1 s^‐1 are observed parallel to the polymer chain, which is up to 10 times higher than those perpendicular to the polymer chain.     

Engineered MoSe2‐Based Heterostructures for Efficient Electrochemical Hydrogen Evolution Reaction

2D transition metal‐dichalcogenides are emerging as efficient and cost‐effective electrocatalysts for the hydrogen evolution reaction (HER). However, only the edge sites of their trigonal prismatic phase show HER‐electrocatalytic properties, while the basal plane, which is absent of defective/unsaturated sites, is inactive. Herein, the authors tackle the key challenge of increasing the number of electrocatalytic sites by designing and engineering heterostructures composed of single‐/few‐layer MoSe₂ flakes and carbon nanomaterials (graphene or single‐wall carbon nanotubes) produced by solution processing. The electrochemical coupling between the materials that comprise the heterostructure effectively enhances the HER‐electrocatalytic activity of the native MoSe₂ flakes. The optimization of the mass loading of MoSe₂ flakes and their electrode assembly via monolithic heterostructure stacking provides a cathodic current density of 10 mA cm^?2 at overpotential of 100 mV, a Tafel slope of 63 mV dec^?1, and an exchange current density (j₀) of 0.203 µA cm^?2. In addition, thermal and chemical treatments are exploited to texturize the basal planes of the MoSe₂ flakes (through Se‐vacancies creation) and to achieve in situ semiconducting‐to‐metallic phase conversion, respectively, thus they activate new HER‐electrocatalytic sites. The as‐engineered electrodes show a 4.8‐fold enhancement of j₀ and a decrease in the Tafel slope to 54 mV dec^?1.     

A Cu‐Based Nanoparticulate Film as Super‐Active and Robust Catalyst Surpasses Pt for Electrochemical H2 Production from Neutral and Weak Acidic Aqueous Solutions

Electrocatalysts that are stable and highly active at low overpotential (η) under mild conditions as well as cost‐effective and scalable are eagerly desired for potential use in photo‐ and electro‐driven hydrogen evolution devices. Here the fabrication and characterization of a super‐active and robust Cu‐Cu_xO‐Pt nanoparticulate electrocatalyst is reported, which displays a small Tafel slope (44 mV dec^?1) and a large exchange current density (1.601 mA cm^?2) in neutral buffer solution. The catalytic current density of this catalyst film reaches 500 mA cm^?2 at η = ?390 ± 12 mV and 20 mA cm^?2 at η = ?45 ± 3 mV, which are significantly higher than the values displayed by Pt foil and Pt/C electrodes in neutral buffer solution and even comparable with the activity of Pt electrode in 0.5 m H₂SO₄ solution.     

Electrokinetic Phenomena Enhanced Lithium‐Ion Transport in Leaky Film for Stable Lithium Metal Anodes

The application of lithium (Li) metal anodes in Li metal batteries has been hindered by growth of Li dendrites, which lead to short cycling life. Here a Li‐ion‐affinity leaky film as a protection layer is reported to promote a dendrite‐free Li metal anode. The leaky film induces electrokinetic phenomena to enhance Li‐ion transport, leading to a reduced Li‐ion concentration polarization and homogeneous Li‐ion distribution. As a result, the dendrite‐free Li metal anode during Li plating/stripping is demonstrated even at an extremely high deposition capacity (6 mAh cm^?2) and current density (40 mA cm^?2) with improved Coulombic efficiencies. A full cell battery with the leaky‐film protected Li metal as the anode and high‐areal‐capacity LiNi_0.8Co_0.1Mn_0.1O₂ (NCM‐811) (≈4.2 mAh cm^?2) or LiFePO₄ (≈3.8 mAh cm^?2) as the cathode shows improved cycling stability and capacity retention, even at lean electrolyte conditions.