Atomic‐Scale Observation of Oxygen Substitution and Its Correlation with Hole‐Transport Barriers in Cu2ZnSnSe4 Thin‐Film Solar Cells

Kesterite‐type Cu₂ZnSn(S,Se)₄ has been extensively studied over the past several years, with researchers searching for promising candidates for indium‐ and gallium‐free inexpensive absorbers in high‐efficiency thin‐film solar cells. Many notable experimental and theoretical studies have dealt with the effects of intrinsic point defects, Cu/Zn/Sn nonstoichiometry, and cation impurities on cell performance. However, there have been few systematic investigations elucidating the distribution of oxygen at an atomic scale and the correlation between oxygen substitution and charge transport despite unavoidable incorporation of oxygen from the ambient atmosphere during thin‐film fabrication. Using energy‐dispersive X‐ray spectroscopy, scanning transmission electron microscopy, and electron energy‐loss spectroscopy, the presence of nanoscale layers is directly demonstrated in which oxygen is substantially substituted for Se, near grain boundaries in polycrystalline Cu₂ZnSnSe₄ films. Density‐functional theory calculations also show that oxygen substitution remarkably lowers the valence band maximum and subsequently widens the overall bandgap. Consequently, anion modification by oxygen can make a major contribution to the formation of a robust barrier blocking the holes from bulk grains into grain boundaries, thereby efficiently attaining electron?hole separation. The findings provide crucial insights into achieving better energy conversion efficiency in kesterite‐based thin‐film solar cells through optimum control of oxidation during the fabrication process.     

Reducing Saturation‐Current Density to Realize High‐Efficiency Low‐Bandgap Mixed Tin–Lead Halide Perovskite Solar Cells

The unsatisfactory performance of low‐bandgap mixed tin (Sn)–lead (Pb) halide perovskite subcells has been one of the major obstacles hindering the progress of the power conversion efficiencies (PCEs) of all‐perovskite tandem solar cells. By analyzing dark‐current density and distribution, it is identified that charge recombination at grain boundaries is a key factor limiting the performance of low‐bandgap mixed Sn–Pb halide perovskite subcells. It is further found that bromine (Br) incorporation can effectively passivate grain boundaries and lower the dark current density by two–three orders of magnitude. By optimizing the Br concentration, low‐bandgap (1.272 eV) mixed Sn–Pb halide perovskite solar cells are fabricated with open‐circuit voltage deficits as low as 0.384 V and fill factors as high as 75%. The best‐performing device demonstrates a PCE of >19%. The results suggest an important direction for improving the performance of low‐bandgap mixed Sn–Pb halide perovskite solar cells.     

Interface Engineering for Highly Efficient and Stable Planar p‐i‐n Perovskite Solar Cells

Organic‐inorganic halide perovskite materials have become a shining star in the photovoltaic field due to their unique properties, such as high absorption coefficient, optimal bandgap, and high defect tolerance, which also lead to the breathtaking increase in power conversion efficiency from 3.8% to over 22% in just seven years. Although the highest efficiency was obtained from the TiO₂ mesoporous structure, there are increasing studies focusing on the planar structure device due to its processibility for large‐scale production. In particular, the planar p‐i‐n structure has attracted increasing attention on account of its tremendous advantages in, among other things, eliminating hysteresis alongside a competitive certified efficiency of over 20%. Crucial for the device performance enhancement has been the interface engineering for the past few years, especially for such planar p‐i‐n devices. The interface engineering aims to optimize device properties, such as charge transfer, defect passivation, band alignment, etc. Herein, recent progress on the interface engineering of planar p‐i‐n structure devices is reviewed. This review is mainly focused on the interface design between each layer in p‐i‐n structure devices, as well as grain boundaries, which are the interfaces between polycrystalline perovskite domains. Promising research directions are also suggested for further improvements.     

In Situ Characterization of Lifetime and Morphology in Operating Bulk Heterojunction Organic Photovoltaic Devices by Impedance Spectroscopy

Time‐dependent charge transport in operating poly(3‐hexylthiophene):[6,6]‐phenyl‐C₆₁‐butyric acid methyl ester (P3HT:PCBM) bulk heterojunction organic photovoltaic (OPV) devices has been characterized with impedance spectroscopy. Devices with varied composition and morphology were measured over a range of illumination intensities ranging from dark conditions to 1 sun and applied bias voltages ranging from 0.0 V to 0.75 V. Using an equivalent circuit model, materials properties such as dielectric constant and conductivity were determined and found to be in agreement with values measured by other methods. Average carrier lifetimes were also extracted from the model and found to correlate with measured power conversion efficiencies. At the short circuit condition and ～1 sun illumination, the average electron lifetime was found to vary from 7.8 to 22 μs for devices with power conversion efficiencies ranging from 2.0 to 2.5%. These results suggest that impedance spectroscopy is an effective tool for predicting how processing parameters can impact device performance in organic bulk heterojunction photovoltaic devices.     

Organic Solar Cells: Polythiophene: Perylene Diimide Solar Cells – the Impact of Alkyl‐Substitution on the Photovoltaic Performance (Adv. Energy Mater. 2/2011)

The photovoltaic parameters, i.e., the short‐circuit current, open‐circuit voltage and device fill factor, of bulk heterojunction solar cells that use perylene diimide (PDI) derivatives as electron acceptors are often far below the theoretically expected values for reasons still not entirely understood. This article demonstrates that the photovoltaic characteristics of blend films of regioregular poly(3‐hexylthiophene) (rr‐P3HT) and PDI molecules are improved upon using a core‐alkylated PDI derivative instead of the often used N‐alkylated PDI molecules. A doubling of the power conversion efficiency of P3HT:PDI solar cells by using the core‐alkylated PDI derivative is observed leading to an unprecedented power conversion efficiency of 0.5% for a P3HT:PDI solar cell under AM1.5 solar illumination. Furthermore, the optical properties of the novel PDI derivative are compared to two standard exclusively N‐alkylated PDI derivatives by steady‐state and time‐resolved photoluminescence spectroscopy in solution and solid state. The experiments reveal that aggregation in the solid state determines the photophysics of all PDI derivatives. However, the emission energy and excited state lifetime of the aggregates are clearly influenced by the alkyl‐substitution pattern through its effect on the packing of the PDI molecules. X‐ray diffraction experiments before and after thermal annealing of PDI:polystyrene and PDI:P3HT blends reveal subtle differences in the packing characteristics of the different PDI derivatives and, problematically, that P3HT ordering is suppressed by all of the PDI derivatives.     

Polythiophene:Perylene Diimide Solar Cells – the Impact of Alkyl‐Substitution on the Photovoltaic Performance

The photovoltaic parameters, i.e., the short‐circuit current, open‐circuit voltage and device fill factor, of bulk heterojunction solar cells that use perylene diimide (PDI) derivatives as electron acceptors are often far below the theoretically expected values for reasons still not entirely understood. This article demonstrates that the photovoltaic characteristics of blend films of regioregular poly(3‐hexylthiophene) (rr‐P3HT) and PDI molecules are improved upon using a core‐alkylated PDI derivative instead of the often used N‐alkylated PDI molecules. A doubling of the power conversion efficiency of P3HT:PDI solar cells by using the core‐alkylated PDI derivative is observed leading to an unprecedented power conversion efficiency of 0.5% for a P3HT:PDI solar cell under AM1.5 solar illumination. Furthermore, the optical properties of the novel PDI derivative are compared to two standard exclusively N‐alkylated PDI derivatives by steady‐state and time‐resolved photoluminescence spectroscopy in solution and solid state. The experiments reveal that aggregation in the solid state determines the photophysics of all PDI derivatives. However, the emission energy and excited state lifetime of the aggregates are clearly influenced by the alkyl‐substitution pattern through its effect on the packing of the PDI molecules. X‐ray diffraction experiments before and after thermal annealing of PDI:polystyrene and PDI:P3HT blends reveal subtle differences in the packing characteristics of the different PDI derivatives and, problematically, that P3HT ordering is suppressed by all of the PDI derivatives.     

Photovoltaic Materials and Devices Based on the Alloyed Kesterite Absorber (AgxCu1–x)2ZnSnSe4

The photovoltaic absorber Cu₂ZnSn(S_xSe_1–x)₄ (CZTSSe) has attracted interest in recent years due to the earth‐abundance of its constituents and the realization of high performance (12.6% efficiency). The open‐circuit voltage in CZTSSe devices is believed to be limited by absorber band tailing caused by the exceptionally high density of Cu/Zn antisites. By replacing Cu in CZTSSe with Ag, whose covalent radius is ≈15% larger than that of Cu and Zn, the density of I–II antisite defects is predicted to drop. The fundamental properties of the mixed Ag‐Cu kesterite compound are reported as a function of the Ag/(Ag + Cu) ratio. The extent of band tailing is shown to decrease with increasing Ag. This is verified by comparing the optical band gap extrapolated from transmission data with the position of the room‐temperature photoluminescence peak; these values converge for the pure‐Ag compound. Additionally, the pinning of the Fermi level in CZTSSe, attributed to heavy defect compensation and band tailing, is not observed in the pure‐Ag compound, offering further evidence of improved electronic structure. Finally, a device efficiency of 10.2% is reported for a device containing 10% Ag (no antireflection coating); this compares to ≈9% (avg) efficiency for the baseline pure‐Cu CZTSe.     

Quantitative Analysis and Visualized Evidence for High Charge Separation Efficiency in a Solid‐Liquid Bulk Heterojunction

In the past few decades, some novel low‐cost nanostructured devices have been explored for converting solar energy into electrical or chemical energy, such as organic photovoltaic cells, photoelectrochemical solar cells, and solar water splitting cells. Generally, higher light absorption and/or charge separation efficiency are considered as the main reasons for improved performance in a nanostructured device versus a planar structure. However, quantitative analysis and definite experimental evidence remain elusive. Here, using BiVO₄ as an example, comparable samples with porous and dense structures have been prepared by a simple method. The porous and dense films are assembled into a solid‐electrolyte bulk and planar heterojunction, respectively. Some quantitative results are obtained by decoupling photon absorption, interfacial charge transfer, and charge separation processes. These results suggest that higher charge separation efficiency is mainly responsible for enhanced performance in a solid‐electrolyte bulk heterojunction. Moreover, we also present visualized evidence to show higher charge separation efficiency comes from a shorter photo‐generated hole diffusion distance in a bulk heterojunction. These results can deepen understanding charge transfer in a bulk heterojunction and offer guidance to design a more efficient low‐cost device for solar conversion and storage.     

Si‐Doped Cu(In,Ga)Se2 Photovoltaic Devices with Energy Conversion Efficiencies Exceeding 16.5% without a Buffer Layer

In this communication, novel and simplified structure Cu(In,Ga)Se₂ (CIGS) solar cells, which nominally consist of only a CIGS photoabsorber layer sandwiched between back and front contact layers but yet demonstrate high photovoltaic efficiencies, are reported. To realize this accomplishment, Si‐doped CIGS films grown by the three‐stage coevaporation method, B‐doped ZnO transparent conductive oxide front contact layers deposited by chemical vapor deposition, and heat–light soaking treatments are used. Si‐doping of CIGS films is found to modify the film surfaces and grain boundary properties and also affect the alkali metal distribution profiles in CIGS films. These effects are expected to contribute to improvements in buffer‐free CIGS device performance. Heat–light soaking treatments, which are occasionally performed to improve conventional buffer‐based CIGS device performance, are found to be also effective in enhancing buffer‐free CIGS photovoltaic efficiencies. This result suggests that the mechanism behind the beneficial effects of heat–light soaking treatments originates from CIGS bulk issues and is independent of the buffer materials. Consequently, over 16.5% efficiencies, including an independently certified value, are demonstrated from completely buffer‐free CIGS photovoltaic devices.     

Efficient Hybrid Tandem Solar Cells Based on Optical Reinforcement of Colloidal Quantum Dots with Organic Bulk Heterojunctions

While colloidal quantum dot photovoltaic devices (CQDPVs) can achieve a power conversion efficiency (PCE) of ≈12%, their insufficient optical absorption in the near‐infrared (NIR) regime impairs efficient utilization of the full spectrum of visible light. Here, high‐efficiency, solution‐processed, hybrid series, tandem photovoltaic devices are developed featuring CQDs and organic bulk heterojunction (BHJ) photoactive materials for front‐ and back‐cells, respectively. The organic BHJ back‐cell efficiently harvests the transmitted NIR photons from the CQD front‐cell, which reinforces the photon‐to‐current conversion at 350–1000 nm wavelengths. Optimizing the short‐circuit current density balance of each sub‐cell and creating a near ideal series connection using an intermediate layer achieve a PCE (12.82%) that is superior to that of each single‐junction device (11.17% and 11.02% for the CQD and organic BHJ device, respectively). Notably, the PCE of the hybrid tandem device is the highest among the reported CQDPVs, including single‐junction devices and tandem devices. The hybrid tandem device also exhibits almost negligible degradation after air storage for 3 months. This study suggests a potential route to improve the performance of CQDPVs by proper hybridization with NIR‐absorbing photoactive materials.     

Heterojunction‐Depleted Lead‐Free Perovskite Solar Cells with Coarse‐Grained B‐γ‐CsSnI3 Thin Films

Perovskite solar cells (PSCs) have been emerging as a breakthrough photovoltaic technology, holding unprecedented promise for low‐cost, high‐efficiency renewable electricity generation. However, potential toxicity associated with the state‐of‐the‐art lead‐containing PSCs has become a major concern. The past research in the development of lead‐free PSCs has met with mixed success. Herein, the promise of coarse‐grained B‐γ‐CsSnI₃ perovskite thin films as light absorber for efficient lead‐free PSCs is demonstrated. Thermally‐driven solid‐state coarsening of B‐γ‐CsSnI₃ perovskite grains employed here is accompanied by an increase of tin‐vacancy concentration in their crystal structure, as supported by first‐principles calculations. The optimal device architecture for the efficient photovoltaic operation of these B‐γ‐CsSnI₃ thin films is identified through exploration of several device architectures. Via modulation of the B‐γ‐CsSnI₃ grain coarsening, together with the use of the optimal PSC architecture, planar heterojunction‐depleted B‐γ‐CsSnI₃ PSCs with power conversion efficiency up to 3.31% are achieved without the use of any additives. The demonstrated strategies provide guidelines and prospects for developing future high‐performance lead‐free PVs.     

Defect Engineering in Multinary Earth‐Abundant Chalcogenide Photovoltaic Materials

Application of zinc‐blende‐related chalcogenide absorbers such as CdTe and Cu(In,Ga)Se₂ (CIGSe) has enabled remarkable advancement in laboratory‐ and commercial‐scale thin‐film photovoltaic performance; however concerns remain regarding the toxicity (CdTe) and scarcity (CIGSe/CdTe) of the constituent elements. Recently, kesterite‐based Cu₂ZnSn(S,Se)₄ (CZTSSe) materials have emerged as attractive non‐toxic and earth‐abundant absorber candidates. Despite the similarities between CZTSSe and CIGSe/CdTe, the record power conversion efficiency of CZTSSe solar cells (12.6%) remains significantly lower than that of CIGSe (22.6%) and CdTe (22.1%) devices, with the performance gap primarily being attributed to cationic disordering and associated band tailing. To capture the promise of kesterite‐like materials as prospective “drop‐in” earth‐abundant replacements for closely‐related CIGSe, current research has focused on several key directions to control disorder, including: (i) examination of the interaction between processing conditions and atomic site disorder, (ii) isoelectronic cation substitution to introduce ionic size mismatch, and (iii) structural diversification beyond the zinc‐blende‐type coordination environment. In this review, recent efforts targeting accurate identification and engineering of anti‐site disorder in kesterite‐based CZTSSe are considered. Lessons learned from CZTSSe are applied to other complex chalcogenide semiconductors, in an effort to develop promising pathways to avoid anti‐site disordering and associated band tailing in future high‐performance earth‐abundant photovoltaic technologies.     

Benzylamine‐Treated Wide‐Bandgap Perovskite with High Thermal‐Photostability and Photovoltaic Performance

Mixed iodide‐bromide organolead perovskites with a bandgap of 1.70–1.80 eV have great potential to boost the efficiency of current silicon solar cells by forming a perovskite‐silicon tandem structure. Yet, the stability of the perovskites under various application conditions, and in particular combined light and heat stress, is not well studied. Here, FA_0.15Cs_0.85Pb(I_0.73Br_0.27)₃, with an optical bandgap of ≈1.72 eV, is used as a model system to investigate the thermal‐photostability of wide‐bandgap mixed halide perovskites. It is found that the concerted effect of heat and light can induce both phase segregation and decomposition in a pristine perovskite film. On the other hand, through a postdeposition film treatment with benzylamine (BA) molecules, the highly defective regions (e.g., film surface and grain boundaries) of the film can be well passivated, thus preventing the progression of decomposition or phase segregation in the film. Besides the stability improvement, the BA‐modified perovskite solar cells also exhibit excellent photovoltaic performance, with the champion device reaching a power conversion efficiency of 18.1%, a stabilized power output efficiency of 17.1% and an open‐circuit voltage (V _oc) of 1.24 V.     

Photovoltaic Device with over 5% Efficiency Based on an n‐Type Ag2ZnSnSe4 Absorber

The kesterite material Cu₂ZnSn(S,Se)₄ (CZTSSe) is an attractive earth‐abundant semiconductor for photovoltaics. However, the power conversion efficiency is limited by a large density of I–II antisite defects, which cause severe band tailing and open‐circuit voltage loss. Ag₂ZnSnSe₄ (AZTSe) is a promising alternative to CZTSSe with a substantially lower I–II antisite defect density and smaller band tailing. AZTSe is weakly n‐type, and this study reports for the first time on how the carrier density is impacted by stoichiometry. This study presents the first‐ever photovoltaic device based on AZTSe, which exhibits an efficiency of 5.2%, which is the highest value reported for an n‐type thin‐film absorber. Due to the weakly n‐type nature of the absorber, a new architecture is employed (SnO:F/AZTSe/MoO₃/ITO) to replace conventional contacts and buffer materials. Using this platform, it is shown that the band tailing parameter in AZTSe more closely resembles that of CIGSe than CZTSSe, underscoring the strong promise of this absorber. In demonstrating the ability to collect photogenerated carriers from AZTSe, this study paves the way for novel thin‐film heterojunction architectures where light absorption in the n‐type device layer can supplement absorption in the p‐type layer as opposed to producing a net optical loss.     

Simultaneous Contact and Grain‐Boundary Passivation in Planar Perovskite Solar Cells Using SnO2‐KCl Composite Electron Transport Layer

The performance of perovskite solar cells is sensitive to detrimental defects, which are prone to accumulate at the interfaces and grain boundaries of bulk perovskite films. Defect passivation at each region will lead to reduced trap density and thus less nonradiative recombination loss. However, it is challenging to passivate defects at both the grain boundaries and the bottom charge transport layer/perovskite interface, mainly due to the solvent incompatibility and complexity in perovskite formation. Here SnO₂‐KCl composite electron transport layer (ETL) is utilized in planar perovskite solar cells to simultaneously passivate the defects at the ETL/perovskite interface and the grain boundaries of perovskite film. The K and Cl ions at the ETL/perovskite interface passivate the ETL/perovskite contact. Meanwhile, K ions from the ETL can diffuse through the perovskite film and passivate the grain boundaries. An enhancement of open‐circuit voltage from 1.077 to 1.137 V and a corresponding power conversion efficiency increasing from 20.2% to 22.2% are achieved for the devices using SnO₂‐KCl composite ETL. The composite ETL strategy reported herein provides an avenue for defect passivation to further increase the efficiency of perovskite solar cells.     

Conformational Disorder Enhances Solubility and Photovoltaic Performance of a Thiophene–Quinoxaline Copolymer

The side‐chain architecture of alternating copolymers based on thiophene and quinoxaline (TQ) is found to strongly influence the solubility and photovoltaic performance. In particular, TQ polymers with different linear or branched alkyloxy‐phenyl side chains on the quinoxaline unit are compared. Attaching the linear alkyloxy side‐chain segment at the meta‐ instead of the para‐position of the phenyl ring reduces the planarity of the backbone as well as the ability to order. However, the delocalisation across the backbone is not affected, which permits the design of high‐performance TQ polymers that do not aggregate in solution. The use of branched meta‐(2‐ethylhexyl)oxy‐phenyl side‐chains results in a TQ polymer with an intermediate degree of order. The reduced tendency for aggregation of TQ polymers with linear meta‐alkyloxy‐phenyl persists in the solid state. As a result, it is possible to avoid the decrease in charge‐transfer state energy that is observed for bulk‐heterojunction blends of more ordered TQ polymers and fullerenes. The associated gain in open‐circuit voltage of disordered TQ:fullerene solar cells, accompanied by a higher short‐circuit current density, leads to a higher power conversion efficiency overall. Thus, in contrast to other donor polymers, for TQ polymers there is no need to compromise between solubility and photovoltaic performance.     

Nanoscale Microstructure and Chemistry of Cu2ZnSnS4/CdS Interface in Kesterite Cu2ZnSnS4 Solar Cells

Sulfurization with various atmosphere and postheat treatments has been reported for earth abundant kesterite Cu₂ZnSnS₄ (CZTS) preparation as cost‐effective material for next‐generation solar cells. A full understanding of the nanoscale microstructure and chemistry of CZTS/CdS interface obtained from these different fabrication routes is currently lacking, yet is critical to developing optimal processing routes for high‐performance kesterite solar cells. Here, the first detailed investigation of the interfacial microstructure and chemistry of CdS/Cu₂ZnSnS₄ heterojunctions is presented. For CZTS obtained from sulfurization in a sulfur‐only atmosphere where highly defective surfaces are present, air annealing followed by etching in the initial stage of chemical bath deposition (CBD) process can effectively eliminate interfacial defects and allow the epitaxial growth of CBD‐CdS, improving the minority lifetime, open circuit voltage (V_OC), and fill factor (FF) of the devices, while blocking Cd diffusion and deteriorating short circuit current (J_sc). For CZTS from sulfurization in a combined sulfur and SnS atmosphere where CBD‐CdS can directly epitaxially grow on CZTS and Cd‐diffusion is clearly observed, associated devices show the longest lifetime and the highest efficiency of 8.76%. Epitaxial growth of CdS and Cd diffusion into CZTS are found to be two crucial features minimizing interfacial recombination and achieving high‐efficiency devices. This will not only enhance the understanding of the device structure and physics of kesterite based solar cells, but also provide an effective way for designing other chalcogenide heterojunction solar cells.     

Dominating Energy Losses in NiO p‐Type Dye‐Sensitized Solar Cells

Nickel oxide based p‐type dye‐sensitized solar cells (DSCs) are limited in their efficiencies by poor fill factors (FFs). This work explores the origins of this limitation. Transient absorption spectroscopy identifies fast recombination between the injected hole and the dye anion under applied load as one of the predominant reasons for the poor FF of NiO‐based DSCs. A reduced hole injection efficiency, η_INJ, under applied load is found to play an equally important role. Both, the dye regeneration yield, Φ_REG, and η_INJ decrease by approximately 40%–50% when moving from short‐ to open‐circuit conditions. Spectroelectrochemical measurements reveal that the electrochromic properties of NiO are a further limiting factor for the device performance leading to variable light‐harvesting efficiencies, η_LH, under applied load. The peak light‐harvesting efficiency decreases from 63% at short circuit to 57% at 600 mV reducing the FF of NiO DSCs by 5%. This effect is expected to be more pronounced for future devices with higher operating voltages. Incident, photon‐to‐electron conversion efficiency front–back analysis at applied bias is utilized to characterize the interfacial charge recombination. It is found that the recombination between the injected hole and the redox mediator has a surprisingly small effect on the FF.     

Direct Imaging of Cl‐ and Cu‐Induced Short‐Circuit Efficiency Changes in CdTe Solar Cells

To achieve high‐efficiency polycrystalline CdTe‐based thin‐film solar cells, the CdTe absorbers must go through a post‐deposition CdCl₂ heat treatment followed by a Cu diffusion step. To better understand the roles of each treatment with regard to improving grains, grain boundaries, and interfaces, CdTe solar cells with and without Cu diffusion and CdCl₂ heat treatments are investigated using cross‐sectional electron beam induced current, electron backscatter diffraction, and scanning transmission electron microscope techniques. The evolution of the cross‐sectional carrier collection profile due to these treatments that cause an increase in short‐circuit current and higher open‐circuit voltage are identified. Additionally, an increased carrier collection in grain boundaries after either/both of these treatments is revealed. The increased current at the grain boundaries is shown to be due to the presence of a space charge region with an intrinsic carrier collection profile width of ≈350 nm. Scanning transmission electron microscope electron‐energy loss spectroscopy shows a decreased Te and increased Cl concentration in grain boundaries after treatment, which causes the inversion. Each treatment improves the overall carrier collection efficiency of the cell separately, and, therefore, the benefits realized by each treatment are shown to be independent of each other.