SrTiO3/Al2O3‐Graphene Electron Transport Layer for Highly Stable and Efficient Composites‐Based Perovskite Solar Cells with 20.6% Efficiency

For practical use of perovskite solar cells (PSCs) the instability issues of devices, attributed to degradation of perovskite molecules by moisture, ions migration, and thermal‐ and light‐instability, have to be solved. Herein, highly efficient and stable PSCs based on perovskite/Ag‐reduced graphene oxide (Ag‐rGO) and mesoporous Al₂O₃/graphene (mp‐AG) composites are reported. The mp‐AG composite is conductive with one‐order of magnitude higher mobility than mp‐TiO₂ and used for electron transport layer (ETL). Compared to the mp‐TiO₂ ETL based cells, the champion device based on perovskite/Ag‐rGO and SrTiO₃/mp‐AG composites shows overall a best performance (i.e., V_OC = 1.057 V, J_SC = 25.75 mA cm^?2, fill factor (FF) = 75.63%, and power conversion efficiency (PCE) = 20.58%). More importantly, the champion device without encapsulation exhibits not only remarkable thermal‐ and photostability but also long‐term stability, retaining 97–99% of the initial values of photovoltaic parameters and sustaining ≈93% of initial PCE over 300 d under ambient conditions.     

A Dopant‐Free Polymeric Hole‐Transporting Material Enabled High Fill Factor Over 81% for Highly Efficient Perovskite Solar Cells

Although perovskite solar cells (PVSCs) have achieved rapid progress in the past few years, most of the high‐performance device results are based on the doped small molecule hole‐transporting material (HTM), spiro‐OMeTAD, which affects their long‐term stability. In addition, some defects from under‐coordinated Pb atoms on the surface of perovskite films can also result in nonradiative recombination to affect device performance. To alleviate these problems, a dopant‐free HTM based on a donor‐acceptor polymer, PBT1‐C, synthesized from the copolymerization between the benzodithiophene and 1,3‐bis(4‐(2‐ethylhexyl)thiophen‐2‐yl)‐5,7‐bis(2‐alkyl)benzo[1,2‐c:4,5‐c′]dithiophene‐4,8‐dione units is introduced. PBT1‐C not only possesses excellent hole mobility, but is also able to passivate the surface traps of the perovskite films. The derived PVSC shows a high power conversion efficiency of 19.06% with a very high fill factor of 81.22%, which is the highest reported for dopant‐free polymeric HTMs. The results from photoluminescence and trap density of states measurements validate that PBT1‐C can effectively passivate both surface and grain boundary traps of the perovskite.     

Simultaneous Improvement in Efficiency and Stability of Low‐Temperature‐Processed Perovskite Solar Cells by Interfacial Control

In most current state‐of‐the‐art perovskite solar cells (PSCs), high‐temperature (≈500 °C)‐sintered metal oxides are employed as electron‐transporting layers (ETLs). To lower the device processing temperature, the development of low‐temperature‐processable ETL materials (such as solution‐processed ZnO) has received growing attention. However, thus far, the use of solution‐processed ZnO is limited because the reverse decomposition reaction that occurs at ZnO/perovskite interfaces significantly degrades the charge collection and stability of PSCs. In this work, the reverse decomposition reaction is successfully retarded by sulfur passivation of solution‐processed ZnO. The sulfur passivation of ZnO by a simple chemical means, efficiently reduces the oxygen‐deficient defects and surface oxygen‐containing groups, thus effectively preventing reverse decomposition reactions during and after formation of the perovskite active layers. Using the low‐temperature‐processed sulfur‐passivated ZnO (ZnO–S), perovskite layers with higher crystallinity and larger grain size are obtained, while the charge extraction at the ZnO/perovskite interface is significantly improved. As a result, the ZnO–S‐based PSCs achieve substantially improved power‐conversion‐efficiency (PCE) (19.65%) and long‐term air‐storage stability (90% retention after 40 d) compared with pristine ZnO‐based PSCs (16.51% and 1% retention after 40 d). Notably, the PCE achieved is the highest recorded (19.65%) for low‐temperature ZnO‐based PSCs.     

Highly Reproducible Sn‐Based Hybrid Perovskite Solar Cells with 9% Efficiency

The low power conversion efficiency (PCE) of tin‐based hybrid perovskite solar cells (HPSCs) is mainly attributed to the high background carrier density due to a high density of intrinsic defects such as Sn vacancies and oxidized species (Sn⁴⁺) that characterize Sn‐based HPSCs. Herein, this study reports on the successful reduction of the background carrier density by more than one order of magnitude by depositing near‐single‐crystalline formamidinium tin iodide (FASnI₃) films with the orthorhombic a‐axis in the out‐of‐plane direction. Using these highly crystalline films, obtained by mixing a very small amount (0.08 m ) of layered (2D) Sn perovskite with 0.92 m (3D) FASnI₃, for the first time a PCE as high as 9.0% in a planar p–i–n device structure is achieved. These devices display negligible hysteresis and light soaking, as they benefit from very low trap‐assisted recombination, low shunt losses, and more efficient charge collection. This represents a 50% improvement in PCE compared to the best reference cell based on a pure FASnI₃ film using SnF₂ as a reducing agent. Moreover, the 2D/3D‐based HPSCs show considerable improved stability due to the enhanced robustness of the perovskite film compared to the reference cell.     

Dominating Energy Losses in NiO p‐Type Dye‐Sensitized Solar Cells

Nickel oxide based p‐type dye‐sensitized solar cells (DSCs) are limited in their efficiencies by poor fill factors (FFs). This work explores the origins of this limitation. Transient absorption spectroscopy identifies fast recombination between the injected hole and the dye anion under applied load as one of the predominant reasons for the poor FF of NiO‐based DSCs. A reduced hole injection efficiency, η_INJ, under applied load is found to play an equally important role. Both, the dye regeneration yield, Φ_REG, and η_INJ decrease by approximately 40%–50% when moving from short‐ to open‐circuit conditions. Spectroelectrochemical measurements reveal that the electrochromic properties of NiO are a further limiting factor for the device performance leading to variable light‐harvesting efficiencies, η_LH, under applied load. The peak light‐harvesting efficiency decreases from 63% at short circuit to 57% at 600 mV reducing the FF of NiO DSCs by 5%. This effect is expected to be more pronounced for future devices with higher operating voltages. Incident, photon‐to‐electron conversion efficiency front–back analysis at applied bias is utilized to characterize the interfacial charge recombination. It is found that the recombination between the injected hole and the redox mediator has a surprisingly small effect on the FF.     

Structurally Reconstructed CsPbI2Br Perovskite for Highly Stable and Square‐Centimeter All‐Inorganic Perovskite Solar Cells

Although all‐inorganic perovskite solar cells (PSCs) demonstrate high thermal stability, cesium‐lead halide perovskites with high iodine content suffer from poor stability of the black phase (α‐phase). In this study, it is demonstrated that incorporating InCl₃ into the host perovskite lattice helps to inhibit the formation of yellow phase (δ‐phase) perovskite and thereby enhances the long‐term ambient stability. The enhanced stability is achieved by a strategy for the structural reconstruction of CsPbI₂Br perovskite by means of In³⁺ and Cl^? codoping, which gives rise to a significant improvement in the overall spatial symmetry with a closely packed atom arrangement due to the crystal structure transformation from orthorhombic (Pnma) to cubic (Pm‐3m). In addition, a novel thermal radiation heating method that further improves the uniformity of the perovskite thin films is presented. This approach enables the construction of all‐inorganic InCl₃:CsPbI₂Br PSCs with a champion power conversion efficiency of 13.74% for a small‐area device (0.09 cm²) and 11.4% for a large‐area device (1.00 cm²).     

Stability and Dark Hysteresis Correlate in NiO‐Based Perovskite Solar Cells

In perovskite solar cells (PSCs), the interfaces are a weak link with respect to degradation. Electrochemical reactivity of the perovskite's halides has been reported for both molecular and polymeric hole selective layers (HSLs), and here it is shown that also NiO brings about this decomposition mechanism. Employing NiO as an HSL in p–i–n PSCs with power conversion efficiency (PCE) of 16.8%, noncapacitive hysteresis is found in the dark, which is attributable to the bias‐induced degradation of perovskite/NiO interface. The possibility of electrochemically decoupling NiO from the perovskite via the introduction of a buffer layer is explored. Employing a hybrid magnesium‐organic interlayer, the noncapacitive hysteresis is entirely suppressed and the device's electrical stability is improved. At the same time, the PCE is improved up to 18% thanks to reduced interfacial charge recombination, which enables more efficient hole collection resulting in higher V_oc and FF.     

Lattice‐Matching Structurally‐Stable 1D@3D Perovskites toward Highly Efficient and Stable Solar Cells

The stability of perovskite solar cells (PSCs) has been identified to be the bottleneck toward their industrialization. With the aim of tackling this challenge, a 1D PbI₂‐bipyridine (BPy)(II) perovskite is fabricated, which is shown to be capable of in situ assembly of a 1D@3D perovskite that is promoted by a PbI₂‐dimethyl sulfoxide complex with a skeletal linear chain structure. The as‐prepared 1D@3D perovskite is observed to demonstrate extremely high stability under external large electric fields in humid environments by means of an in situ characterization technique. This stability is associated with its well lattice‐matching heterojunction structure between 1D and 3D heterojunction domains. Importantly, ion migration is alleviated through blocking of the ion‐migration channels. Accordingly, the 1D@3D hybrid PSC shows a power conversion efficiency of 21.18% maintaining remarkably high long‐term stability in the presence of water, illumination, and external electric fields. This rational design and microstructure study of 1D@3D perovskites provides a new paradigm that may enable higher efficiency and stability of PSCs.     

Metal Halide Perovskite Materials for Solar Cells with Long‐Term Stability

Metal halide perovskite solar cells (PSCs) have emerged as promising candidates for photovoltaic technology with their power conversion efficiencies over 23%. For prototypical organic–inorganic metal halide perovskites, their intrinsic instability poses significant challenges to the commercialization of PSCs. Recently, the scientific community has done tremendous work in composition engineering to develop more robust light‐absorbing layers, including mixed‐ion hybrid perovskites, low‐dimensional hybrid perovskites, and all‐inorganic perovskites. This review provides an overview of the impact of these perovskites on the efficiency and long‐term stability of PSCs.     

Aquointermediate Assisted Highly Orientated Perovskite Thin Films toward Thermally Stable and Efficient Solar Cells

The stability of single‐crystalline/monocrystalline‐like perovskite film is expected to be better than its microcrystalline counterparts. In the present work, highly orientated perovskite thin films (CH₃NH₃PbI_3–xCl_x) are prepared by means of aquointermediates assisted solution process. It displays super‐duper preferred‐orientation along <110> direction that is close to the single crystal, and its diffraction intensity ratio of (110)/(310) is nearly two orders of magnitude higher in contrast to the films that prepared by traditional way. Owing to its superior performances, e.g., highly crystallized quality, stress‐free inside films, longer electron lifetime, faster temporal response time, etc., the highly orientated perovskite‐based solar cells accordingly allow realizing high efficiency while improving its thermal stability.     

Efficient Indium‐Doped TiOx Electron Transport Layers for High‐Performance Perovskite Solar Cells and Perovskite‐Silicon Tandems

In addition to a good perovskite light absorbing layer, the hole and electron transport layers play a crucial role in achieving high‐efficiency perovskite solar cells. Here, a simple, one‐step, solution‐based method is introduced for fabricating high quality indium‐doped titanium oxide electron transport layers. It is shown that indium‐doping improves both the conductivity of the transport layer and the band alignment at the ETL/perovskite interface compared to pure TiO₂, boosting the fill‐factor and voltage of perovskite cells. Using the optimized transport layers, a high steady‐state efficiency of 17.9% for CH₃NH₃PbI₃‐based cells and 19.3% for Cs_0.05(MA_0.17FA_0.83)_0.95Pb(I_0.83Br_0.17)₃‐based cells is demonstrated, corresponding to absolute efficiency gains of 4.4% and 1.2% respectively compared to TiO₂‐based control cells. In addition, a steady‐state efficiency of 16.6% for a semi‐transparent cell is reported and it is used to achieve a four‐terminal perovskite‐silicon tandem cell with a steady‐state efficiency of 24.5%.     

Stable Inverted Planar Perovskite Solar Cells with Low‐Temperature‐Processed Hole‐Transport Bilayer

Low‐temperature‐processed perovskite solar cells (PSCs), which can be fabricated on rigid or flexible substrates, are attracting increasing attention because they have a wide range of potential applications. In this study, the stability of reduced graphene oxide and the ability of a poly(triarylamine) underlayer to improve the quality of overlying perovskite films to construct hole‐transport bilayer by means of a low‐temperature method are taken advantage of. The bilayer is used in both flexible and rigid inverted planar PSCs with the following configuration: substrate/indium tin oxide/reduced graphene oxide/polytriarylamine/CH₃NH₃PbI₃/PCBM/bathocuproine/Ag (PCBM = [6,6]‐phenyl‐C₆₁‐butyric acid methyl ester). The flexible and rigid PSCs show power conversion efficiencies of 15.7 and 17.2%, respectively, for the aperture area of 1.02 cm². Moreover, the PSC based the bilayer shows outstanding light‐soaking stability, retaining ≈90% of its original efficiency after continuous illumination for 500 h at 100 mW cm^?2.     

Di‐Spiro‐Based Hole‐Transporting Materials for Highly Efficient Perovskite Solar Cells

Hole‐transporting materials (HTMs) are essential for enabling highly efficient perovskite solar cells (PVSCs) to extract and transport the hole carriers. Among numerous HTMs that are studied so far, the single‐spiro‐based compounds are the most frequently used HTMs for achieving highly efficient PVSCs. In fact, all the new spiro‐based HTMs reported so far that render PVSCs over 20% are based on spiro[fluorene‐9,9′‐xanthene] or spiro [cyclopenta [2,1‐b:3,4b′]dithiophene‐4,9′‐fluorene] cores; therefore, there is a need to diversify the design of their structures for further improving their function and performance. In addition, the fundamental understanding of structure–performance relationships for the spiro‐based HTMs is still lagging, for example, how molecular configuration, spiro numbers, and heteroatoms in spiro‐rings impact the efficacy of HTMs. To address these needs, two novel H‐shaped HTMs, G1 and G2 based on the di‐spiro‐rings as the cores are designed and synthesized. The combined good film‐forming properties, better interactions with perovskite, slightly deeper highest occupied molecular orbital, higher mobility and conductivity, as well as more efficient charge transfer for G2 help devices reach a very impressive power conversion efficiency of 20.2% and good stability. This is the first report of demonstrating the feasibility of using di‐spiro‐based HTMs for highly efficient PVSCs.     

Rubidium Multication Perovskite with Optimized Bandgap for Perovskite‐Silicon Tandem with over 26% Efficiency

Rubidium (Rb) is explored as an alternative cation to use in a novel multication method with the formamidinium/methylammonium/cesium (Cs) system to obtain 1.73 eV bangap perovskite cells with negligible hysteresis and steady state efficiency as high as 17.4%. The study shows the beneficial effect of Rb in improving the crystallinity and suppressing defect migration in the perovskite material. The light stability of the cells examined under continuous illumination of 12 h is improved upon the addition of Cs and Rb. After several cycles of 12 h light–dark, the cell retains 90% of its initial efficiency. In parallel, sputtered transparent conducting oxide thin films are developed to be used as both rear and front transparent contacts on quartz substrate with less than 5% parasitic absorption of near infrared wavelengths. Using these developments, semi‐transparent perovskite cells are fabricated with steady state efficiency of up to 16.0% and excellent average transparency of ≈84% between 720 and 1100 nm. In a tandem configuration using a 23.9% silicon cell, 26.4% efficiency (10.4% from the silicon cell) in a mechanically stacked tandem configuration is demonstrated which is very close to the current record for a single junction silicon cell of 26.6%.     

Interface Engineering for Highly Efficient and Stable Planar p‐i‐n Perovskite Solar Cells

Organic‐inorganic halide perovskite materials have become a shining star in the photovoltaic field due to their unique properties, such as high absorption coefficient, optimal bandgap, and high defect tolerance, which also lead to the breathtaking increase in power conversion efficiency from 3.8% to over 22% in just seven years. Although the highest efficiency was obtained from the TiO₂ mesoporous structure, there are increasing studies focusing on the planar structure device due to its processibility for large‐scale production. In particular, the planar p‐i‐n structure has attracted increasing attention on account of its tremendous advantages in, among other things, eliminating hysteresis alongside a competitive certified efficiency of over 20%. Crucial for the device performance enhancement has been the interface engineering for the past few years, especially for such planar p‐i‐n devices. The interface engineering aims to optimize device properties, such as charge transfer, defect passivation, band alignment, etc. Herein, recent progress on the interface engineering of planar p‐i‐n structure devices is reviewed. This review is mainly focused on the interface design between each layer in p‐i‐n structure devices, as well as grain boundaries, which are the interfaces between polycrystalline perovskite domains. Promising research directions are also suggested for further improvements.