Dual Functional Electron‐Selective Contacts Based on Silicon Oxide/Magnesium: Tailoring Heterointerface Band Structures while Maintaining Surface Passivation

Silicon (Si)‐based dopant‐free heterojunction solar cells (SCs) featuring carrier‐selective contacts (CSCs) have attracted considerable interest due to the extreme simplifications in their device structure and manufacturing procedure. However, these SCs are limited by the unsatisfactory contact properties on both sides of the junction, and their efficiencies are not comparable with those of commercially available Si SCs. In this report, a high‐performance silicon‐oxide/magnesium (SiO_x/Mg) electron‐selective contact (ESC) design is described. Combining an ultrathin SiO_x and a low work function Mg layer, the novel ESC simultaneously yields low recombinative and resistive losses. In addition, deposition of Mg on SiO_x relaxes the restriction on the threshold thickness of the SiO_x for electron tunneling and therefore broadens the optimization space for rear‐sided passivation. Meanwhile, hole‐selective contact with boosted light harvesting and suppressed interfacial recombination is achieved by forming a fully conformal contact between the conducting poly(3,4‐ethylene dioxythiophene): poly(styrenesulfonate) (PEDOT: PSS) and periodic Si pyramid arrays. With the double‐sided carrier‐selective contact designs, PEDOT: PSS/Si/SiO_x/Mg SCs with efficiency of 15% are finally obtained via a totally dopant‐free processing. Subsequent calculations further indicate a pathway for the improvement of these contacts toward an efficiency that is competitive with conventionally diffused pn junction SCs.     

A Low Resistance Calcium/Reduced Titania Passivated Contact for High Efficiency Crystalline Silicon Solar Cells

Recent advances in the efficiency of crystalline silicon (c‐Si) solar cells have come through the implementation of passivated contacts that simultaneously reduce recombination and resistive losses within the contact structure. In this contribution, low resistivity passivated contacts are demonstrated based on reduced titania (TiO_x) contacted with the low work function metal, calcium (Ca). By using Ca as the overlying metal in the contact structure we are able to achieve a reduction in the contact resistivity of TiO_x passivated contacts of up to two orders of magnitude compared to previously reported data on Al/TiO_x contacts, allowing for the application of the Ca/TiO_x contact to n‐type c‐Si solar cells with partial rear contacts. Implementing this contact structure on the cell level results in a power conversion efficiency of 21.8% where the Ca/TiO_x contact comprises only ≈6% of the rear surface of the solar cell, an increase of 1.5% absolute compared to a similar device fabricated without the TiO_x interlayer.     

MXene‐Contacted Silicon Solar Cells with 11.5% Efficiency

MXene, a new class of 2D materials, has gained significant attention owing to its attractive electrical conductivity, tunable work function, and metallic nature for wide range of applications. Herein, delaminated few layered Ti₃C₂T_x MXene contacted Si solar cells with a maximum power conversion efficiency (PCE) of ≈11.5% under AM1.5G illumination are demonstrated. The formation of an Ohmic junction of the metallic MXene to n⁺‐Si surface efficiently extracts the photogenerated electrons from n⁺np⁺‐Si, decreases the contact resistance, and suppresses the charge carrier recombination, giving rise to excellent open‐circuit voltage and short‐circuit current density. The rapid thermal annealing process further improves the electrical contact between Ti₃C₂T_x MXene and n⁺‐Si surface by reducing sheet resistance, increasing electrical conductivity, and decreasing cell series resistance, thus leading to a remarkable improvement in fill factor and overall PCE. The work demonstrated here can be extended to other MXene compositions as potential electrodes for developing highly performing solar cells.     

Lithium Fluoride Based Electron Contacts for High Efficiency n‐Type Crystalline Silicon Solar Cells

Low‐resistance contact to lightly doped n‐type crystalline silicon (c‐Si) has long been recognized as technologically challenging due to the pervasive Fermi‐level pinning effect. This has hindered the development of certain devices such as n‐type c‐Si solar cells made with partial rear contacts (PRC) directly to the lowly doped c‐Si wafer. Here, a simple and robust process is demonstrated for achieving mΩ cm² scale contact resistivities on lightly doped n‐type c‐Si via a lithium fluoride/aluminum contact. The realization of this low‐resistance contact enables the fabrication of a first‐of‐its‐kind high‐efficiency n‐type PRC solar cell. The electron contact of this cell is made to less than 1% of the rear surface area, reducing the impact of contact recombination and optical losses, permitting a power conversion efficiency of greater than 20% in the initial proof‐of‐concept stage. The implementation of the LiF_x/Al contact mitigates the need for the costly high‐temperature phosphorus diffusion, typically implemented in such a cell design to nullify the issue of Fermi level pinning at the electron contact. The timing of this demonstration is significant, given the ongoing transition from p‐type to n‐type c‐Si solar cell architectures, together with the increased adoption of advanced PRC device structures within the c‐Si photovoltaic industry.     

Improved Performance and Reliability of p‐i‐n Perovskite Solar Cells via Doped Metal Oxides

Perovskite photovoltaics (PVs) have attracted attention because of their excellent power conversion efficiency (PCE). Critical issues related to large‐area PV performance, reliability, and lifetime need to be addressed. Here, it is shown that doped metal oxides can provide ideal electron selectivity, improved reliability, and stability for perovskite PVs. This study reports p‐i‐n perovskite PVs with device areas ranging from 0.09 cm² to 0.5 cm² incorporating a thick aluminum‐doped zinc oxide (AZO) electron selective contact with hysteresis‐free PCE of over 13% and high fill factor values in the range of 80%. AZO provides suitable energy levels for carrier selectivity, neutralizes the presence of pinholes, and provides intimate interfaces. Devices using AZO exhibit an average PCE increase of over 20% compared with the devices without AZO and maintain the high PCE for the larger area devices reported. Furthermore, the device stability of p‐i‐n perovskite solar cells under the ISOS‐D‐1 is enhanced when AZO is used, and maintains 100% of the initial PCE for over 1000 h of exposure when AZO/Au is used as the top electrode. The results indicate the importance of doped metal oxides as carrier selective contacts to achieve reliable and high‐performance long‐lived large‐area perovskite solar cells.     

Conductive and Stable Magnesium Oxide Electron‐Selective Contacts for Efficient Silicon Solar Cells

A high Schottky barrier (>0.65 eV) for electrons is typically found on lightly doped n‐type crystalline (c‐Si) wafers for a variety of contact metals. This behavior is commonly attributed to the Fermi‐level pinning effect and has hindered the development of n‐type c‐Si solar cells, while its p‐type counterparts have been commercialized for several decades, typically utilizing aluminium alloys in full‐area, and more recently, partial‐area rear contact configurations. Here the authors demonstrate a highly conductive and thermally stable electrode composed of a magnesium oxide/aluminium (MgO_x/Al) contact, achieving moderately low resistivity Ohmic contacts on lightly doped n‐type c‐Si. The electrode, functionalized with nanoscale MgO_x films, significantly enhances the performance of n‐type c‐Si solar cells to a power conversion efficiency of 20%, advancing n‐type c‐Si solar cells with full‐area dopant‐free rear contacts to a point of competitiveness with the standard p‐type architecture. The low thermal budget of the cathode formation, its dopant‐free nature, and the simplicity of the device structure enabled by the MgO_x/Al contact open up new possibilities in designing and fabricating low‐cost optoelectronic devices, including solar cells, thin film transistors, or light emitting diodes.     

Dopant‐Free Partial Rear Contacts Enabling 23% Silicon Solar Cells

Over the past five years, there has been a significant increase in both the intensity of research and the performance of crystalline silicon devices which utilize metal compounds to form carrier‐selective heterocontacts. Such heterocontacts are less fundamentally limited and have the potential for lower costs compared to the current industry dominating heavily doped, directly metalized contacts. A low temperature (≤230 °C), TiO_x/LiF_x/Al electron heterocontact is presented here, which achieves mΩcm² scale contact resistivities ρ_c on lowly doped n‐type substrates. As an extreme demonstration of the potential of this heterocontact, it is trialed in a newly developed, high efficiency n‐type solar cell architecture as a partial rear contact (PRC). Despite only contacting ≈1% of the rear surface area, an efficiency of greater than 23% is achieved, setting a new benchmark for n‐type solar cells featuring undoped PRCs and confirming the unusually low ρ_c of the TiO_x/LiF_x/Al contact. Finally, in contrast to previous versions of the n‐type undoped PRC cell, the performance of this cell is maintained after annealing at 350–400 °C, suggesting its compatibility with conventional surface passivation activation and sintering steps.     

Electron‐Beam‐Evaporated Nickel Oxide Hole Transport Layers for Perovskite‐Based Photovoltaics

High‐quality charge carrier transport materials are of key importance for stable and efficient perovskite‐based photovoltaics. This work reports on electron‐beam‐evaporated nickel oxide (NiO_x) layers, resulting in stable power conversion efficiencies (PCEs) of up to 18.5% when integrated into solar cells employing inkjet‐printed perovskite absorbers. By adding oxygen as a process gas and optimizing the layer thickness, transparent and efficient NiO_x hole transport layers (HTLs) are fabricated, exhibiting an average absorptance of only 1%. The versatility of the material is demonstrated for different absorber compositions and deposition techniques. As another highlight of this work, all‐evaporated perovskite solar cells employing an inorganic NiO_x HTL are presented, achieving stable PCEs of up to 15.4%. Along with good PCEs, devices with electron‐beam‐evaporated NiO_x show improved stability under realistic operating conditions with negligible degradation after 40 h of maximum power point tracking at 75 °C. Additionally, a strong improvement in device stability under ultraviolet radiation is found if compared to conventional perovskite solar cell architectures employing other metal oxide charge transport layers (e.g., titanium dioxide). Finally, an all‐evaporated perovskite solar mini‐module with a NiO_x HTL is presented, reaching a PCE of 12.4% on an active device area of 2.3 cm².     

Overcoming Interfacial Losses in Solution‐Processed Organic Multi‐Junction Solar Cells

Organic solar cells are promising in terms of full‐solution‐processing which enables low‐cost and large‐scale fabrication. While single‐junction solar cells have seen a boost in power conversion efficiency (PCE), multi‐junction solar cells are promising to further enhance the PCE. In all‐solution‐processed multi‐junction solar cells, interfacial losses are often encountered between hole‐transporting layer (HTL) and the active layers and therefore greatly limit the application of newly developed high‐performance donor and acceptor materials in multi‐junction solar cells. Here, the authors report on a systematic study of interface losses in both single‐junction and multi‐junction solar cells based on representative polymer donors and HTLs using electron spectroscopy and time‐of‐flight secondary ion mass spectrometry. It is found that a facile mixed HTL containing poly(3,4‐ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) and MoO _x nanoparticles successfully overcomes the interfacial losses in both single‐ and multi‐junction solar cells based on various active layers by reducing interface protonation, promoting better energy‐level alignment, and forming a dense and smooth layer. Solution‐processed single‐junction solar cells are demonstrated to reach the same performance as with evaporated MoO _x (over 7%). Multi‐junction solar cells with polymers containing nitrogen atoms as the first layer and the mixed PEDOT:PSS and MoO _x nanoparticles as hole extraction layer reach fill factor (FF) of over 60%, and PCE of over 8%, while the identical stack with pristine PEDOT:PSS or MoO _x nanoparticles show FF smaller than 50% and PCE less than 5%.     

Improving Film Formation and Photovoltage of Highly Efficient Inverted‐Type Perovskite Solar Cells through the Incorporation of New Polymeric Hole Selective Layers

Two chemically tailored new conjugated copolymers, HSL1 and HSL2, were developed and applied as hole selective layers to improve the anode interface of fullerene/perovskite planar heterojunction solar cells. The introduction of polar functional groups on the polymer side chains increases the surface energy of the hole selective layers (HSLs), which promote better wetting with the perovskite films and lead to better films with full coverage and high crystallinity. The deep highest occupied molecular orbital levels of the HSLs align well with the valence band of the perovskite semiconductors, resulted in increase photovoltage. The high lying lowest unoccupied molecule orbital level provides sufficient electron blocking ability to prevent electrons from reaching the anode and reduces the interfacial trap‐assisted recombination at the poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate)/perovskite interface, resulting in a longer charge‐recombination lifetime and shorter charge‐extraction time. In the presence of the HSLs, high‐performance CH₃NH₃PbI _x Cl_{3? x} perovskite solar cells with a power conversion efficiency (PCE) of 16.6% (V _oc: 1.07 V) and CH₃NH₃Pb(I_0.3Br_0.7) _x Cl_{3? x} cells with a PCE of 10.3% (V _oc: 1.34 V) can be realized.     

Synergistic Crystal and Interface Engineering for Efficient and Stable Perovskite Photovoltaics

The presence of bulk and surface defects in perovskite light harvesting materials limits the overall efficiency of perovskite solar cells (PSCs). The formation of such defects is suppressed by adding methylammonium chloride (MACl) as a crystallization aid to the precursor solution to realize high‐quality, large‐grain triple A‐cation perovskite films and that are combined with judicious engineering of the perovskite interface with the electron and hole selective contact materials. A planar SnO₂/TiO₂ double layer oxide is introduced to ascertain fast electron extraction and the surface of the perovskite facing the hole conductor is treated with iodine dissolved in isopropanol to passivate surface trap states resulting in a retardation of radiationless carrier recombination. A maximum solar to electric power conversion efficiency (PCE) of 21.65% and open circuit photovoltage (V_oc) of ≈1.24 V with only ≈370 mV loss in potential with respect to the band gap are achieved, by applying these modifications. Additionally, the defect healing enhances the operational stability of the devices that retain 96%, 90%, and 85% of their initial PCE values after 500 h under continuously light illumination at 20, 50, and 65 °C, respectively, demonstrating one of the most stable planar PSCs reported so far.     

Enhanced Light Harvesting in Perovskite Solar Cells by a Bioinspired Nanostructured Back Electrode

Light management holds great promise of realizing high‐performance perovskite solar cells by improving the sunlight absorption with lower recombination current and thus higher power conversion efficiency (PCE). Here, a convenient and scalable light trapping scheme is demonstrated by incorporating bioinspired moth‐eye nanostructures into the metal back electrode via soft imprinting technique to enhance the light harvesting in organic–inorganic lead halide perovskite solar cells. Compared to the flat reference cell with a methylammonium lead halide perovskite (CH₃NH₃PbI_3?x Cl_x ) absorber, 14.3% of short‐circuit current improvement is achieved for the patterned devices with moth‐eye nanostructures, yielding an increased PCE up to 16.31% without sacrificing the open‐circuit voltage and fill factor. The experimental and theoretical characterizations verify that the cell performance enhancement is mainly ascribed by the broadband polarization‐insensitive light scattering and surface plasmonic effects due to the patterned metal back electrode. It is noteworthy that this light trapping strategy is fully compatible with solution‐processed perovskite solar cells and opens up many opportunities toward the future photovoltaic applications.     

The Importance of Fullerene Percolation in the Mixed Regions of Polymer–Fullerene Bulk Heterojunction Solar Cells

Most optimized donor‐acceptor (D‐A) polymer bulk heterojunction (BHJ) solar cells have active layers too thin to absorb greater than ～80% of incident photons with energies above the polymer's band gap. If the thickness of these devices could be increased without sacrificing internal quantum efficiency, the device power conversion efficiency (PCE) could be significantly enhanced. We examine the device characteristics of BHJ solar cells based on poly(di(2‐ethylhexyloxy)benzo[1,2‐b:4,5‐b′]dithiophene‐co‐octylthieno[3,4‐c]pyrrole‐4,6‐dione) (PBDTTPD) and [6,6]‐phenyl‐C₆₁‐butyric acid methyl ester (PCBM) with 7.3% PCE and find that bimolecular recombination limits the active layer thickness of these devices. Thermal annealing does not mitigate these bimolecular recombination losses and drastically decreases the PCE of PBDTTPD BHJ solar cells. We characterize the morphology of these BHJs before and after thermal annealing and determine that thermal annealing drastically reduces the concentration of PCBM in the mixed regions, which consist of PCBM dispersed in the amorphous portions of PBDTTPD. Decreasing the concentration of PCBM may reduce the number of percolating electron transport pathways within these mixed regions and create morphological electron traps that enhance charge‐carrier recombination and limit device quantum efficiency. These findings suggest that (i) the concentration of PCBM in the mixed regions of polymer BHJs must be above the PCBM percolation threshold in order to attain high solar cell internal quantum efficiency, and (ii) novel processing techniques, which improve polymer hole mobility while maintaining PCBM percolation within the mixed regions, should be developed in order to limit bimolecular recombination losses in optically thick devices and maximize the PCE of polymer BHJ solar cells.     

Rapid Aqueous Spray Fabrication of Robust NiOx: A Simple and Scalable Platform for Efficient Perovskite Solar Cells

Organometal halide perovskites have powerful intrinsic potential to drive next‐generation solar technology, but their insufficient thermomechanical reliability and unproven large‐area manufacturability limit competition with incumbent silicon photovoltaics. This work addresses these limitations by leveraging large‐area processing and robust inorganic hole transport layers (HTLs). Inverted perovskite solar cells utilizing NiO_x HTLs deposited by rapid aqueous spray‐coating that outperform spin‐coated NiO_x and lead to a 5× improvement in the fracture energy (G_c), a primary metric of thermomechanical stability, are presented. The morphology, chemical composition, and optoelectronic properties of the NiO_x films are characterized to understand and optimize compatibility with an archetypal double cation perovskite, Cs_.17FA_.83Pb(Br_.17I_.83)₃. Perovskite solar cells with sprayed NiO_x show higher photovoltaic performance, exhibiting up to 82% fill factor and 17.7% power conversion efficiency (PCE)—the highest PCE reported for inverted cell with scalable charge transport layers—as well as excellent stability under full illumination and after 4000 h aging in inert conditions at room temperature. By utilizing open‐air techniques and aqueous precursors, this combination of robust materials and low‐cost processing provides a platform for scaling perovskite modules with long‐term reliability.     

Surface Engineering of TiO2 ETL for Highly Efficient and Hysteresis‐Less Planar Perovskite Solar Cell (21.4%) with Enhanced Open‐Circuit Voltage and Stability

Interfacial studies and band alignment engineering on the electron transport layer (ETL) play a key role for fabrication of high‐performance perovskite solar cells (PSCs). Here, an amorphous layer of SnO₂ (a‐SnO₂) between the TiO₂ ETL and the perovskite absorber is inserted and the charge transport properties of the device are studied. The double‐layer structure of TiO₂ compact layer (c‐TiO₂) and a‐SnO₂ ETL leads to modification of interface energetics, resulting in improved charge collection and decreased carrier recombination in PSCs. The optimized device based on a‐SnO₂/c‐TiO₂ ETL shows a maximum power conversion efficiency (PCE) of 21.4% as compared to 19.33% for c‐TiO₂ based device. Moreover, the modified device demonstrates a maximum open‐circuit voltage (V_oc) of 1.223 V with 387 mV loss in potential, which is among the highest reported value for PSCs with negligible hysteresis. The stability results show that the device on c‐TiO₂/a‐SnO₂ retains about 91% of its initial PCE value after 500 h light illumination, which is higher than pure c‐TiO₂ (67%) based devices. Interestingly, using a‐SnO₂/c‐TiO₂ ETL the PCE loss was only 10% of initial value under continuous UV light illumination after 30 h, which is higher than that of c‐TiO₂ based device (28% PCE loss).     

A Novel Anion Doping for Stable CsPbI2Br Perovskite Solar Cells with an Efficiency of 15.56% and an Open Circuit Voltage of 1.30 V

The Cs‐based inorganic perovskite solar cells (PSCs), such as CsPbI₂Br, have made a striking breakthrough with power conversion efficiency (PCE) over 16% and potential to be used as top cells for tandem devices. Herein, I^? is partially replaced with the acetate anion (Ac^?) in the CsPbI₂Br framework, producing multiple benefits. The Ac^? doping can change the morphology, electronic properties, and band structure of the host CsPbI₂Br film. The obtained CsPbI_2?x Br(Ac)_x perovskite films present lower trap densities, longer carrier lifetimes, and fast charge transportation compared to the host CsPbI₂Br films. Interestingly, the CsPbI_2?x Br(Ac)_x PSCs exhibit a maximum PCE of 15.56% and an ultrahigh open circuit voltage (V_oc) of 1.30 V without sacrificing photocurrent. Notably, such a remarkable V_oc is among the highest values of the previously reported CsPbI₂Br PSCs, while the PCE far exceeds all of them. In addition, the obtained CsPbI_2?x Br(Ac)_x PSCs exhibit high reproducibility and good stability. The stable CsPbI_2?x Br(Ac)_x PSCs with high V_oc and PCE are desirable for tandem solar cell applications.     

A New Interconnecting Layer of Metal Oxide/Dipole Layer/Metal Oxide for Efficient Tandem Organic Solar Cells

A new metal‐oxide‐based interconnecting layer (ICL) structure of all‐solution processed metal oxide/dipole layer/metal oxide for efficient tandem organic solar cell (OSC) is demonstrated. The dipole layer modifies the work function (WF) of molybdenum oxide (MoO _x ) to eliminate preexisted counter diode between MoO _x and TiO₂. Three different amino functionalized water/alcohol soluble conjugated polymers (WSCPs) are studied to show that the WF tuning of MoO _x is controllable. Importantly, the results show that S‐shape current density versus voltage (J–V) characteristics form when operation temperature decreases. This implies that thermionic emission within the dipole layer plays critical role for helping recombination of electrons and holes. Meanwhile, the insignificant homotandem open‐circuit voltage (V _oc) loss dependence on dipole layer thickness shows that the quantum tunneling effect is weak for efficient electron and hole recombination. Based on this ICL, poly(3‐hexylthiophene) (P3HT)‐based homotandem OSC with 1.20 V V _oc and 3.29% power conversion efficiency (PCE) is achieved. Furthermore, high efficiency poly(4,8‐bis(5‐(2‐ethylhexyl)‐thiophene‐2‐yl)‐benzo[1,2‐b54,5‐b9]dithiophene‐alt alkylcarbonylthieno[3,4‐b]thiophene) (PBDTTT‐C‐T)‐based homotandem OSC with 1.54 V V _oc and 8.11% PCE is achieved, with almost 15.53% enhancement compared to its single cell. This metal oxide/dipole layer/metal oxide ICL provides a new strategy to develop other qualified ICL with different hole transporting layer and electron transporting layer in tandem OSCs.     

All‐Oxide MoOx/SnOx Charge Recombination Interconnects for Inverted Organic Tandem Solar Cells

Multijunction solar cells are designed to improve the overlap with the solar spectrum and to minimize losses due to thermalization. Aside from the optimum choice of photoactive materials for the respective sub‐cells, a proper interconnect is essential. This study demonstrates a novel all‐oxide interconnect based on the interface of the high‐work‐function (WF) metal oxide MoO_x and low‐WF tin oxide (SnO_x). In contrast to typical p‐/n‐type tunnel junctions, both the oxides are n‐type semiconductors with a WF of 5.2 and 4.2 eV, respectively. It is demonstrated that the electronic line‐up at the interface of MoO_x and SnO_x comprises a large intrinsic interface dipole (≈0.8 eV), which is key to afford ideal alignment of the conduction band of MoO_x and SnO_x, without the requirement of an additional metal or organic dipole layer. The presented MoO_x/SnO_x interconnect allows for the ideal (loss‐free) addition of the open circuit voltages of the two sub‐cells.     

Enhanced Efficiency in Plastic Solar Cells via Energy Matched Solution Processed NiOx Interlayers

We show enhanced efficiency and stability of a high performance organic solar cell (OPV) when the work‐function of the hole collecting indium‐tin oxide (ITO) contact, modified with a solution‐processed nickel oxide (NiO_x) hole‐transport layer (HTL), is matched to the ionization potential of the donor material in a bulk‐heterojunction solar cell. Addition of the NiO_x HTL to the hole collecting contact results in a power conversion efficiency (PCE) of 6.7%, which is a 17.3% net increase in performance over the 5.7% PCE achieved with a poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) HTL on ITO. The impact of these NiO_x films is evaluated through optical and electronic measurements as well as device modeling. The valence and conduction band energies for the NiO_x HTL are characterized in detail through photoelectron spectroscopy studies while spectroscopic ellipsometry is used to characterize the optical properties. Oxygen plasma treatment of the NiO_x HTL is shown to provide superior contact properties by increasing the ITO/NiO_x contact work‐function by 500 meV. Enhancement of device performance is attributed to reduction of the band edge energy offset at the ITO/NiO_x interface with the poly(N‐9′‐heptadecanyl‐2,7‐carbazole‐alt‐5,5‐(4′,7′‐di‐2‐thienyl‐2′,1′,3′‐benzothidiazole) (PCDTBT):[6,6]‐phenyl‐C61 butyric acid methyl ester PCBM and [6,6]‐phenyl‐C71 butyric acid methyl ester (PC₇₀BM) active layer. A high work‐function hole collecting contact is therefore the appropriate choice for high ionization potential donor materials in order to maximize OPV performance.     

Spontaneous Interface Ion Exchange: Passivating Surface Defects of Perovskite Solar Cells with Enhanced Photovoltage

Interface engineering is of great concern in photovoltaic devices. For the solution‐processed perovskite solar cells, the modification of the bottom surface of the perovskite layer is a challenge due to solvent incompatibility. Herein, a Cl‐containing tin‐based electron transport layer; SnO_x‐Cl, is designed to realize an in situ, spontaneous ion‐exchange reaction at the interface of SnO_x‐Cl/MAPbI₃. The interfacial ion rearrangement not only effectively passivates the physical contact defects, but, at the same time, the diffusion of Cl ions in the perovskite film also causes longitudinal grain growth and further reduces the grain boundary density. As a result, an efficiency of 20.32% is achieved with an extremely high open‐circuit voltage of 1.19 V. This versatile design of the underlying carrier transport layer provides a new way to improve the performance of perovskite solar cells and other optoelectronic devices.