Grain Boundary Scattering of Charge Transport in n‐Type (Hf,Zr)CoSb Half‐Heusler Thermoelectric Materials

High thermoelectric figure of merit zT of ≈1.0 has been reported in both n‐ and p‐type (Hf,Zr)CoSb‐based half‐Heusler compounds, and further improvement of thermoelectric performance relies on the insightful understanding of electron and phonon transport mechanisms. In this work, the thermoelectric transport features are analyzed for (Hf_0.3Zr_0.7)_1?xNb_xCoSb (x = 0.02–0.3) with a wide range of carrier concentration. It is found that, although both temperature and energy dependencies of charge transport resemble ionized impurity scattering, the grain boundary scattering is the dominant scattering mechanism near room temperature. With increasing carrier concentration and grain size, the influence of the grain boundary scattering on electron transport weakens. The dominant scattering mechanism changes from grain boundary scattering to acoustic phonon scattering as temperature rises. The lattice thermal conductivity decreases with increasing Nb doping content due to the increased strain field fluctuations. These results provide an in‐depth understanding of the transport mechanisms and guidance for further optimizing thermoelectric properties of half‐Heusler alloys and other thermoelectric systems.     

Tuning Multiscale Microstructures to Enhance Thermoelectric Performance of n‐Type Bismuth‐Telluride‐Based Solid Solutions

Microstructure manipulation plays an important role in enhancing physical and mechanical properties of materials. Here a high figure of merit zT of 1.2 at 357 K for n‐type bismuth‐telluride‐based thermoelectric (TE) materials through directly hot deforming the commercial zone melted (ZM) ingots is reported. The high TE performance is attributed to a synergistic combination of reduced lattice thermal conductivity and maintained high power factor. The lattice thermal conductivity is substantially decreased by broad wavelength phonon scattering via tuning multiscale microstructures, which includes microscale grain size reduction and texture loss, nanoscale distorted regions, and atomic scale lattice distotions and point defects. The high power factor of ZM ingots is maintained by the offset between weak donor‐like effect and texture loss during the hot deformation. The resulted high zT highlights the role of multiscale microstructures in improving Bi₂Te₃‐based materials and demonstrates the effective strategy in enhancing TE properties.     

High Band Degeneracy Contributes to High Thermoelectric Performance in p‐Type Half‐Heusler Compounds

Half‐Heusler (HH) compounds are important high temperature thermoelectric (TE) materials and have attracted considerable attention in the recent years. High figure of merit zT values of 0.8 to 1.0 have been obtained in n‐type ZrNiSn‐based HH compounds. However, developing high performance p‐type HH compounds are still a big challenge. Here, it is shown that a new p‐type HH alloy with a high band degeneracy of 8, Ti‐doped FeV_0.6Nb_0.4Sb, can achieve a high zT of 0.8, which is one of the highest reported values in the p‐type HH compounds. Although the band effective mass of this system is found to be high, which may lead to a low mobility, its low deformation potential and low alloy scattering potential both contribute to a reasonably high mobility. The enhanced phonon scattering by alloying leads to a reduced lattice thermal conductivity. The achieved high zT demonstrates that the p‐type Ti doped FeV_0.6Nb_0.4Sb HH alloys are promising as TE materials and offer an excellent TE performance match with n‐type ones for high temperature power generation.     

Improved Bulk Materials with Thermoelectric Figure‐of‐Merit Greater than 1: Tl10–xSnxTe6 and Tl10–xPbxTe6

Noting the steadily worsening problem of depleted fossil fuel sources, alternate energy sources have become increasingly important; these include thermoelectrics, which may use waste heat to generate electricity. To be economically viable, the thermoelectric figure‐of‐merit, zT, which is related to the energy conversion efficiency, needs to be in excess of unity (zT > 1). Tl₄SnTe₃ and Tl₄PbTe₃ were reported to attain a thermoelectric figure‐of‐merit zT _max = 0.74 and 0.71, respectively, at 673 K. Here, the thermoelectric properties of both materials are presented as a function of x in Tl_10–x Sn _x Te₆ and Tl_10–x Pb _x Te₆, with x varying between 1.9 and 2.05, culminating in zT values in excess of 1.2. These materials are charge balanced when x = 2, according to (Tl⁺)₈(Sn²⁺)₂(Te^2?)₆ and (Tl⁺)₈(Pb²⁺)₂(Te^2?)₆ (or: (Tl⁺)₄Pb²⁺(Te^2?)₃). Increasing x causes an increase in valence electrons, and thus a decrease in the dominating p‐type charge carriers. Larger x values occur with a smaller electrical conductivity and a larger Seebeck coefficient. In each case, the lattice thermal conductivity remains under 0.5 W m^?1 K^?1, resulting in several samples attaining the desired zT _max > 1. The highest values thus far are exhibited by Tl_8.05Sn_1.95Te₆ with zT = 1.26 and Tl_8.10Pb_1.90Te₆ with zT = 1.46 around 685 K.     

High Thermoelectric Efficiency of n‐type PbS

PbS shares several features with the other lead chalcogenides PbX (X: Te, Se), which are good thermoelectric materials. PbS has a potential advantage in that it is quite earth abundant and inexpensive. In this work we tune the transport properties in n‐type, single‐phase polycrystalline PbS_1‐xCl_x (x ≤ 0.008) with different carrier densities. Lead chloride provides a nearly 100% efficient doping control up to 1.2 × 10²⁰ cm^?3. The maximum zT achieved at 850 K is 0.7 with a predicted zT ～ 1 at 1000 K. This is about twice as high as what was previously reported (～0.4) for binary PbS. Compared with the other lead chalcogenides the higher effective mass and higher lattice thermal conductivity makes binary PbS an inferior thermoelectric material. However this study also predicts greater potential of zT improvement in PbS by material engineering such as alloying or nanostructuring compared to PbSe or PbTe. Considering their abundance and low cost, PbS based materials are quite competitive among the lead chalcogenides for thermoelectric applications.     

Crystal Structure Induced Ultralow Lattice Thermal Conductivity in Thermoelectric Ag9AlSe6

Recent discoveries of novel thermoelectric materials largely rely on an intrinsic low lattice thermal conductivity. This results from various mechanisms including low sound velocity, complex crystal structure, liquid‐like ions, and lattice anharmonicity. Here semiconducting Ag₉AlSe₆ with many weakly bonded and highly disordered cations is shown to be a promising novel thermoelectric material, due to its ultralow lattice thermal conductivity (κ_L) of ≈0.3 W m^?1 K^?1 in the entire temperature range. Such a low κ_L is believed to be a result of its (1) complex crystal structure for a small population of acoustic phonons, (2) soft bonding for an overall low sound velocity (1300 m s^?1), and (3) massive disordering of Ag ions. Its electronic transport properties can be well understood by a single parabolic band model with acoustic scattering. The achieved thermoelectric figure of merit (zT) can be as high as unity, which is unlike conventional thermoelectric materials, which rely heavily on a high power factor. This work not only demonstrates Ag₉AlSe₆ as a promising thermoelectric material, but also paves the way for the exploration of novel thermoelectrics with a complex crystal structure with weakly bonded and highly disordered constituent elements in the structure.     

Optimum Carrier Concentration in n‐Type PbTe Thermoelectrics

Taking La‐ and I‐doped PbTe as an example, the current work shows the effects of optimizing the thermoelectric figure of merit, zT, by controlling the doping level. The high doping effectiveness allows the carrier concentration to be precisely designed and prepared to control the Fermi level. In addition to the Fermi energy tuning, La‐doping modifies the conduction band, leading to an increase in the density of states effective mass that is confirmed by transport, infrared reflectance and hard X‐ray photoelectron spectroscopy measurements. Taking such a band structure modification effect into account, the electrical transport properties can then be well‐described by a self‐consistent single non‐parabolic Kane band model that yields an approximate (m*T)^1.5 dependence of the optimal carrier concentration for a peak power factor in both doping cases. Such a simple temperature dependence also provides an effective approximation of carrier concentration for a peak zT and helps to explain, the effects of other strategies such as lowering the lattice thermal conductivity by nanostructuring or alloying in n‐PbTe, which demonstrates a practical guide for fully optimizing thermoelectric materials in the entire temperature range. The principles used here should be equally applicable to other thermoelectric materials.     

Approaching the Minimum Thermal Conductivity in Rhenium‐Substituted Higher Manganese Silicides

Higher manganese silicides (HMS) made of earth‐abundant and non‐toxic elements are regarded as promising p‐type thermoelectric materials because their complex crystal structure results in low lattice thermal conductivity. It is shown here that the already low thermal conductivity of HMS can be reduced further to approach the minimum thermal conductivity via partial substitution of Mn with heavier rhenium (Re) to increase point defect scattering. The solubility limit of Re in the obtained Re_xMn_1‐xSi_1.8 is determined to be about x = 0.18. Elemental inhomogeneity and the formation of ReSi_1.75 inclusions with 50?200 nm size are found within the HMS matrix. It is found that the power factor does not change markedly at low Re content of x ≤ 0.04 before it drops considerably at higher Re contents. Compared to pure HMS, the reduced lattice thermal conductivity in Re_xMn_1‐xSi_1.8 results in a 25% increase of the peak figure of merit ZT to reach 0.57 ± 0.08 at 800 K for x = 0.04. The suppressed thermal conductivity in the pure Re_xMn_1‐xSi_1.8 can enable further investigations of the ZT limit of this system by exploring different impurity doping strategies to optimize the carrier concentration and power factor.     

Low Electron Scattering Potentials in High Performance Mg2Si0.45Sn0.55 Based Thermoelectric Solid Solutions with Band Convergence

Understanding the electron and phonon transport characteristics is crucial for designing and developing high performance thermoelectric materials. Weak scattering effects on charge carriers, characterized by deformation potential and alloy scattering potential, are favorable for thermoelectric solid solutions to enable high carrier mobility and thereby promising thermoelectric performance. Mg₂(Si,Sn) solid solutions have attracted much attention due to their low cost and environmental compatibility. Usually, their high thermoelectric performance with ZT ～ 1 is ascribed to the band convergence and reduced lattice thermal conductivity caused by alloying. In this work, both a low deformation potential Ξ = 13 eV and a low alloy scattering potential U = 0.7 eV are found for the thermoelectric alloys by characterizing and modeling of thermoelectric transport properties. The band convergence is also verified by the increased density‐of‐states effective mass. It is proposed that, in addition to band convergence and reduced lattice thermal conductivity, the low deformation potential and alloy scattering potential are additional intrinsic features that contribute to the high thermoelectric performance of the solid solutions.     

Lead‐Free Thermoelectrics: High Figure of Merit in p‐type AgSnmSbTem+2

Thermoelectric materials based on Pb‐free compositions are of considerable current interest in environmentally friendly power‐generation applications derived from waste‐heat sources. Here, a new study of the thermoelectric properties of the tin‐based compositions with the general formula AgSn_mSbTe_m+2 (m = 2, 4, 5, 7, 10, 14, 18) is presented, where the m value is used as the tuning parameter of the thermoelectric properties. The electrical conductivity, Seebeck coefficient, and thermal conductivity are measured from 300 K to 723 K and the resulting thermoelectric figure of merit is determined as a function of the SnTe/AgSbTe₂ ratio. A thermoelectric figure of merit ZT ≈1 is obtained at 710 K for m = 4, indicating that the system AgSn_mSbTe_m+2 holds great promise as an alternative p‐type, lead‐free, thermoelectric material.     

Increase in the Figure of Merit by Cd‐Substitution in Sn1–xPbxTe and Effect of Pb/Sn Ratio on Thermoelectric Properties

The effects of Cd‐doping on the thermoelectric properties of Sn_1–xPb_xTe are investigated and compared to the properties of the corresponding Sn_1–xPb_xTe solid solutions. The addition of Cd results in a reduction in the carrier concentration and changes in the physical properties, as well as in the conduction type of Sn_1–xPb_xTe. A significant increase in the power factor accompanied by a reduction in the thermal conductivity result in a higher figure of merit (ZT) for (Sn_1–xPb_x)_0.97Cd_0.03Te than that of undoped Sn_1–xPb_xTe. The maximum ZT (～0.7) values are observed for p‐type material with x = 0.36 at 560 K. Much higher values (ZT ～ 1.2 at 560 K for x = 0.73) are obtained on n‐type samples.     

High Efficiency Half‐Heusler Thermoelectric Materials for Energy Harvesting

Half‐Heusler (HH) compounds have gained ever‐increasing popularity as promising high temperature thermoelectric materials. High figure of merit zT of ≈1.0 above 1000 K has recently been realized for both n‐type and p‐type HH compounds, demonstrating the realistic prospect of these high temperature compounds for high efficiency power generation. Here, recent progress in advanced fabrication techniques and the intrinsic atomic disorders in HH compounds, which are linked to the understanding of the electrical transport, is discussed. Thermoelectric transport features of n‐type ZrNiSn‐based HH alloys are particularly emphasized, which is beneficial to further improving thermoelectric performance and comprehensively understanding the underlying mechanisms in HH thermoelectric materials. The rational design and realization of new high performance p‐type Fe(V,Nb)Sb‐based HH compounds are also demonstrated. The outlook for future research directions of HH thermoelectric materials is also discussed.     

n‐Type SnSe2 Oriented‐Nanoplate‐Based Pellets for High Thermoelectric Performance

It is reported that electron doped n‐type SnSe₂ nanoplates show promising thermoelectric performance at medium temperatures. After simultaneous introduction of Se deficiency and Cl doping, the Fermi level of SnSe₂ shifts toward the conduction band, resulting in two orders of magnitude increase in carrier concentration and a transition to degenerate transport behavior. In addition, all‐scale hierarchical phonon scattering centers, such as point defects, nanograin boundaries, stacking faults, and the layered nanostructures, cooperate to produce very low lattice thermal conductivity. As a result, an enhanced in‐plane thermoelectric figure of merit ZT_max of 0.63 is achieved for a 1.5 at% Cl doped SnSe_1.95 pellet at 673 K, which is much higher than the corresponding in‐plane ZT of pure SnSe₂ (0.08).     

Enhancement in Thermoelectric Figure‐Of‐Merit of an N‐Type Half‐Heusler Compound by the Nanocomposite Approach

An enhancement in the dimensionless thermoelectric figure‐of‐merit (ZT) of an n‐type half‐Heusler material is reported using a nanocomposite approach. A peak ZT value of 1.0 was achieved at 600 °C–700 °C, which is about 25% higher than the previously reported highest value. The samples were made by ball‐milling ingots of composition Hf_0.75Zr_0.25NiSn_0.99Sb_0.01 into nanopowders and hot‐pressing the powders into dense bulk samples. The ingots were formed by arc‐melting the elements. The ZT enhancement mainly comes from reduction of thermal conductivity due to increased phonon scattering at grain boundaries and crystal defects, and optimization of antimony doping.     

Eco‐Friendly Higher Manganese Silicide Thermoelectric Materials: Progress and Future Challenges

As a promising thermoelectric material, higher manganese silicides are composed of earth‐abundant and eco‐friendly elements, and have attracted extensive attention for future commercialization. In this review, the authors first summarize the crystal structure, band structure, synthesis method, and pristine thermoelectric performance of different higher manganese silicides. After that, the strategies for enhancing electrical performance and reducing lattice thermal conductivity of higher manganese silicides as well as their synergism are highlighted. The application potentials including the chemical and mechanical stability of higher manganese silicides and their energy conversion efficiency of the assembled thermoelectric modules are also summarized. By analyzing the current advances in higher manganese silicides, this review proposes that potential methods of further enhancing zT of higher manganese silicides, lie in enhancing electrical performance while simultaneously reducing lattice thermal conductivity via reducing effective mass, optimizing carrier concentration, and nanostructure engineering.     

Subtle Roles of Sb and S in Regulating the Thermoelectric Properties of N‐Type PbTe to High Performance

A high ZT (thermoelectric figure of merit) of ≈1.4 at 900 K for n‐type PbTe is reported, through modifying its electrical and thermal properties by incorporating Sb and S, respectively. Sb is confirmed to be an amphoteric dopant in PbTe, filling Te vacancies at low doping levels (<1%), exceeding which it enters into Pb sites. It is found that Sb‐doped PbTe exhibits much higher carrier mobility than similar Bi‐doped materials, and accordingly, delivers higher power factors and superior ZT . The enhanced electronic transport is attributed to the elimination of Te vacancies, which appear to strongly scatter n‐type charge carriers. Building on this result, the ZT of Pb_0.9875Sb_0.0125Te is further enhanced by alloying S into the Te sublattice. The introduction of S opens the bandgap of PbTe, which suppresses bipolar conduction while simultaneously increasing the electron concentration and electrical conductivity. Furthermore, it introduces point defects and induces second phase nanostructuring, which lowers the lattice thermal conductivity to ≈0.5 W m^?1 K^?1 at 900 K, making this material a robust candidate for high‐temperature (500–900 K) thermoelectric applications. It is anticipated that the insights provided here will be an important addition to the growing arsenal of strategies for optimizing the performance of thermoelectric materials.     

High-Entropy Cubic Pseudo-Ternary Ag2(S,Se, Te) Materials With Excellent Ductility and Thermoelectric Performance

The discovery of ductile Ag₂(S, Se, Te) materials opens a new avenue toward high-performance flexible/hetero-shaped thermoelectrics. Specifically, the cubic-structured materials are quite attractive by combining remarkable plasticity, decent thermoelectric figure of merit (zT), and no phase transition above room temperature. However, such materials are quite few and the understanding is inadequate on their mechanical and thermoelectric properties. Enlightened by the high-entropy principles, a series of pseudo-ternary Ag₂S-Ag₂Se-Ag₂Te alloys is designed and comprehensive diagrams of composition-structure-plasticity-zT are compiled. Subsequently, the compositional region for the cubic phase is outlined. As a high-entropy example featuring with anion-site alloying and disordered Ag ions, Ag_2-xS_1/3Se_1/3Te_1/3 materials exhibit impressively large elongations of 60–97%, ultralow lattice thermal conductivities of ≈0.2 W m⁻¹ K⁻¹, and decent zT values of 0.45 at 300 K, 0.8 at 460 K. The materials can be readily rolled into thin foils, showing excellent flexibility. Finally, a six-leg in-plane device is fabricated, achieving an output voltage of 13.6 mV, a maximal power of 12.8 µW, and a power density of 14.3 W m⁻² under the temperature difference of 30 K, much higher than the organic counterparts. This study largely enriches the members of cubic ductile inorganic materials for the applications in flexible and hetero-shaped energy and electronic devices.     

An Integrated Approach to Thermoelectrics: Combining Phonon Dynamics,Nanoengineering, Novel Materials Development,Module Fabrication,and Metrology

This review discusses the longstanding efforts to develop advanced thermoelectrics through a multidisciplinary approach by combining condensed matter physics, nanotechnology, solid‐state chemistry, electrical engineering, mechanical engineering, and metrology. The phonon dynamics of skutterudites, clathrates, tetrahedrites, and layered LaOBiSSe are investigated through inelastic neutron scattering, allowing insights into their low lattice thermal conductivity due to rattling in a cage as well as under planar coordination. The electrical resistivity, Seebeck coefficient, and Hall coefficient of Bi‐nanowires are successfully measured with a home‐made system, demonstrating a size effect in thermoelectric and galvanomagnetic phenomena. For PbTe‐based bulk thermoelectrics, an exceptionally high figure of merit ZT (≈1.8 at 800 K) is achieved through nanostructuring. Moreover, correspondingly high conversion efficiency (≈11% for a temperature difference of 590 K) is demonstrated in nanostructured PbTe‐based modules. Sulfides (tetrahedrite, colusite, and CdI₂‐type layered systems) and arsenides (LnFeAsO and BaZn₂As₂) are developed as environmentally friendly and emerging thermoelectric materials, respectively. The output power and efficiency of modules with novel materials, including nanostructured PbTe, Zn₄Sb₃, and clathrates, are measured with the highly accurate self‐made system. Future opportunities and challenges for the widespread use of thermoelectric waste heat recovery and energy harvesting are also discussed.     

Achieving zT > 2 in p‐Type AgSbTe2−xSex Alloys via Exploring the Extra Light Valence Band and Introducing Dense Stacking Faults

Through simultaneously enhancing the power factor by engineering the extra light band and enhancing phonon scatterings by introducing a high density of stacking faults, a record figure‐of‐merit over 2.0 is achieved in p‐type AgSbTe_2?xSe_x alloys. Density functional theory calculations confirm the presence of the light valence band with large degeneracy in AgSbTe₂, and that alloying with Se decreases the energy offset between the light valence band and the valence band maximum. Therefore, a significantly enhanced power factor is realized in p‐type AgSbTe_2?xSe_x alloys. In addition, transmission electron microscopy studies indicate the appearance of stacking faults and grain boundaries, which together with grain boundaries and point defects significantly strengthen phonon scatterings, leading to an ultralow thermal conductivity. The synergetic strategy of simultaneously enhancing power factor and strengthening phonon scattering developed in this study opens up a robust pathway to tailor thermoelectric performance.     

High Thermoelectric Performance in Polycrystalline SnSe Via Dual‐Doping with Ag/Na and Nanostructuring With Ag8SnSe6

Single crystalline SnSe is one of the most intriguing new thermoelectric materials but the thermoelectric performance of polycrystalline SnSe seems to lag significantly compared to that of a single crystal. Here an effective strategy for enhancing the thermoelectric performance of p‐type polycrystalline SnSe by Ag/Na dual‐doping and Ag₈SnSe₆ (STSe) nanoprecipitates is reported. The Ag/Na dual‐doping leads to a two orders of magnitude increase in carrier concentration and a convergence of valence bands (VBM₁ and VBM₅), which in turn results in sharp enhancement of electrical conductivities and high Seebeck coefficients in the Ag/Na dual‐doped samples. Additionally, the SnSe matrix becomes nanostructured with dispersed nanoprecipitates of the compound Ag₈SnSe₆, which further strengthens the scattering of phonons. Specifically, ≈20% reduction in the already ultralow lattice thermal conductivity is realized for the Sn_0.99Na_0.01Se–STSe sample at 773 K compared to the thermal conductivity of pure SnSe. Consequently, a peak thermoelectric figure of merit ZT of 1.33 at 773 K with a high average ZT (ZT_ave) value of 0.91 (423–823 K) is achieved for the Sn_0.99Na_0.01Se–STSe sample.