Interfacing Pristine C60 onto TiO2 for Viable Flexibility in Perovskite Solar Cells by a Low‐Temperature All‐Solution Process

A low‐temperature solution‐processed strategy is critical for cost‐effective manufacture of flexible perovskite solar cells (PSCs). Based on an aqueous‐processed TiO₂ layer, and conventional fullerene derivatives replaced by a pristine fullerene interlayer of C₆₀, herein a facile interface engineering for making all‐solution‐processed TiO₂/C₆₀ layers in flexible n‐i‐p PSCs is reported. Due to the improvement of the perovskite grain quality, promotion of interfacial charge transfer and suppression of interfacial charge recombination, the stabilized power conversion efficiency for the flexible PSCs reaches as high as 16% with high bending resistance retention (≈80% after 1500 cycles) and high light‐soaking retention (≈100% after 100 min). In addition, the stabilized efficiency is over 19% for the rigid TiO₂/C₆₀‐based PSCs. The present work with the facile low‐temperature solution process renders the practicability for high‐performance flexible PSCs applied to wearable devices, portable equipment, and electric vehicles.     

Simultaneous Improved Performance and Thermal Stability of Planar Metal Ion Incorporated CsPbI2Br All‐Inorganic Perovskite Solar Cells Based on MgZnO Nanocrystalline Electron Transporting Layer

The high thermal stability and facile synthesis of CsPbI₂Br all‐inorganic perovskite solar cells (AI‐PSCs) have attracted tremendous attention. As far as electron‐transporting layers (ETLs) are concerned, low temperature processing and reduced interfacial recombination centers through tunable energy levels determine the feasibility of the perovskite devices. Although the TiO₂ is the most popular ETL used in PSCs, its processing temperature and moderate electron mobility hamper the performance and feasibility. Herein, the highly stable, low‐temperature processed MgZnO nanocrystal‐based ETLs for dynamic hot‐air processed Mn²⁺ incorporated CsPbI2Br AI‐PSCs are reported. By holding its regular planar “n–i–p” type device architecture, the MgZnO ETL and poly(3‐hexylthiophene‐2,5‐diyl) hole transporting layer, 15.52% power conversion efficiency (PCE) is demonstrated. The thermal‐stability analysis reveals that the conventional ZnO ETL‐based AI‐PSCs show a serious instability and poor efficiency than the Mg²⁺ modified MgZnO ETLs. The photovoltaic and stability analysis of this improved photovoltaic performance is attributed to the suitable wide‐bandgap, low ETL/perovskite interface recombination, and interface stability by Mg²⁺ doping. Interestingly, the thermal stability analysis of the unencapsulated AI‐PSCs maintains >95% of initial PCE more than 400 h at 85 °C for MgZnO ETL, revealing the suitability against thermal degradation than conventional ZnO ETL.     

Hot‐Substrate Deposition of Hole‐ and Electron‐Transport Layers for Enhanced Performance in Perovskite Solar Cells

Charge transport layers play an important role in determining the power conversion efficiencies (PCEs) of perovskite solar cells (PSCs). However, it has proven challenging to produce thin and compact charge transport layers via solution processing techniques. Herein, a hot substrate deposition method capable of improving the morphology of high‐coverage hole‐transport layers (HTLs) and electron‐transport layers (ETLs) is reported. PSC devices using HTLs deposited on a hot substrate show improvement in the open‐circuit voltage (V_oc) from 1.041 to 1.070 V and the PCE from 17.00% to 18.01%. The overall device performance is then further enhanced with the hot substrate deposition of ETLs as the V_oc and PCE reach 1.105 V and 19.16%, respectively. The improved performance can be explained by the decreased current leakage and series resistance, which are present in PSCs with rough and discontinuous HTLs and ETLs.     

Simultaneous Improvement in Efficiency and Stability of Low‐Temperature‐Processed Perovskite Solar Cells by Interfacial Control

In most current state‐of‐the‐art perovskite solar cells (PSCs), high‐temperature (≈500 °C)‐sintered metal oxides are employed as electron‐transporting layers (ETLs). To lower the device processing temperature, the development of low‐temperature‐processable ETL materials (such as solution‐processed ZnO) has received growing attention. However, thus far, the use of solution‐processed ZnO is limited because the reverse decomposition reaction that occurs at ZnO/perovskite interfaces significantly degrades the charge collection and stability of PSCs. In this work, the reverse decomposition reaction is successfully retarded by sulfur passivation of solution‐processed ZnO. The sulfur passivation of ZnO by a simple chemical means, efficiently reduces the oxygen‐deficient defects and surface oxygen‐containing groups, thus effectively preventing reverse decomposition reactions during and after formation of the perovskite active layers. Using the low‐temperature‐processed sulfur‐passivated ZnO (ZnO–S), perovskite layers with higher crystallinity and larger grain size are obtained, while the charge extraction at the ZnO/perovskite interface is significantly improved. As a result, the ZnO–S‐based PSCs achieve substantially improved power‐conversion‐efficiency (PCE) (19.65%) and long‐term air‐storage stability (90% retention after 40 d) compared with pristine ZnO‐based PSCs (16.51% and 1% retention after 40 d). Notably, the PCE achieved is the highest recorded (19.65%) for low‐temperature ZnO‐based PSCs.     

Halogen Engineering for Operationally Stable Perovskite Solar Cells via Sequential Deposition

The performance of perovskite solar cells (PSCs) relies on the synthesis method and chemical composition of the perovskite materials. So far, PSCs that have adopted two‐step sequential deposited perovskite with the state‐of‐art composition (FAPbI₃)_1?x(MAPbBr₃)_x (x < 0.05) have achieved record power conversion efficiency (PCE), while their one‐step antisolvent dripping counterparts with typical composition Cs_0.05FA_0.81MA_0.14Pb(I_0.85Br_0.15)₃ with more bromine have exhibited much better long‐term operational stability. Thus, halogen engineering that aims to elevate bromine content in sequential deposited perovskite film would push operational stability of PSCs toward that of antisolvent dripping deposited perovskite materials. Here, a Br‐rich seeding growth method is devised and perovskite seed solution with high bromine content is introduced into a PbI₂ precursor, leading to bromine incorporation in the resulting perovskite film. Photovoltaic devices fabricated by Br‐rich seeding growth method exhibit a PCE of 21.5%, similar to 21.6% for PSCs having lower bromine content. Whereas, the operational stability of PSCs with higher bromine content is significantly enhanced, with over 80% of initial PCE retained after 500 h tracking at maximum power point under 1‐sun illumination. This work highlights the vital importance of halogen composition for the operational stability of PSCs, and introduces an effective way to incorporate bromine into mixed‐cation‐halide perovskite film via sequential deposition method.     

Efficient and Hysteresis‐Free Perovskite Solar Cells Based on a Solution Processable Polar Fullerene Electron Transport Layer

Fullerene derivatives, which possess extraordinary geometric shapes and high electron affinity, have attracted significant attention for thin film technologies. This study demonstrates an important photovoltaic application using carboxyl‐functionalized carbon buckyballs, C60 pyrrolidine tris‐acid (CPTA), to fabricate electron transport layers (ETLs) that replace traditional metal oxide‐based ETLs in efficient and stable n‐i‐p‐structured planar perovskite solar cells (PSCs). The uniform CPTA film is covalently anchored onto the surface of indium tin oxide (ITO), significantly suppressing hysteresis and enhancing the flexural strength in the CPTA‐modified PSCs. Moreover, solution‐processable CPTA‐based ETLs also enable the fabrication of lightweight flexible PSCs. The maximum‐performing device structures composed of ITO/CPTA/CH₃NH₃PbI₃/2,2′,7,7′‐tetrakis‐(N,N‐di‐p‐methoxyphenylamine)‐9,9′‐spirobifluorene (spiro‐OMeTAD)/Au yield power conversion efficiencies of more than 18% on glass substrates and up to 17% on flexible substrates. These results indicate that the CPTA layers provide new opportunities for solution‐processed organic ETLs by substantially simplifying the procedure for fabricating PSCs for portable applications.     

Solvent Engineering Boosts the Efficiency of Paintable Carbon‐Based Perovskite Solar Cells to Beyond 14%

Carbon‐based hole transport material (HTM)‐free perovskite solar cells (PSCs) have shown much promise for practical applications because of their high stability and low cost. However, the efficiencies of this kind of PSCs are still relatively low, especially for the simplest paintable carbon‐based PSCs, in comparison with the organic HTM‐based PSCs. This can be imputed to the perovskite deposition methods that are not very suitable for this kind of devices. A solvent engineering strategy based on two‐step sequential method is exploited to prepare a high‐quality perovskite layer for the paintable carbon‐based PSCs in which the solvent for CH₃NH₃I (MAI) solution at the second step is changed from isopropanol (IPA) to a mixed solvent of IPA/Cyclohexane (CYHEX). This mixed solvent not only accelerates the conversion of PbI₂ to CH₃NH₃PbI₃ but also suppresses the Ostwald ripening process resulting in a high‐quality perovskite layer, e.g., pure phase, even surface, and compact capping layer. The paintable carbon‐based PSCs fabricated from IPA/CYHEX solvent exhibits a considerable enhancement in photovoltaic performance and performance reproducibility in comparison with that from pure IPA, especially on fill factor (FF), owing mainly to the better contact of perovskite/carbon interface, lower trap density in perovskite, higher light absorption ability, and faster charge transport of perovskite layer. As a result, the highest power conversion efficiency (PCE) of 14.38% is obtained, which is a record value for carbon‐based HTM‐free PSCs. Furthermore, a PCE of as high as 10% is achieved for the large area device (1 cm²), also the highest of its kind.     

Outstanding Performance of Hole‐Blocking Layer‐Free Perovskite Solar Cell Using Hierarchically Porous Fluorine‐Doped Tin Oxide Substrate

Perovskite solar cells (PSCs) are of great interest in current photovoltaic research due to their extraordinary power conversion efficiency of ≈20% and boundless potentialities. The high efficiency has been mostly obtained from TiO₂‐based PSCs, where TiO₂ is utilized as a hole‐blocking, mesoporous layer. However, trapped charges and the light‐induced photocatalytic effect of TiO₂ seriously degrade the perovskite and preclude PSCs from being immediately commercialized. Herein, a simplified PSC is successfully fabricated by eliminating the problematic TiO₂ layers, using instead a fluorine‐doped tin oxide (FTO)/perovskite/hole–conductor/Au design. Simultaneously, the sluggish charge extraction at the FTO/perovskite interface is overcome by modifying the surface of the FTO to a porous structure using electrochemical etching. This surface engineering enables a substantial increase in the photocurrent density and mitigation of the hysteretic behavior of the pristine FTO‐based PSC; a remarkable 19.22% efficiency with a low level of hysteresis is obtained. This performance is closely approaching that of conventional PSCs and may facilitate their commercialization due to improved convenience, lower cost, greater stability, and potentially more efficient mass production.     

2‐Thiopheneformamidinium‐Based 2D Ruddlesden–Popper Perovskite Solar Cells with Efficiency of 16.72% and Negligible Hysteresis

Formamidinium (FA)‐based 3D perovskite solar cells (PSCs) have been widely studied and they show reduced bandgap, enhanced stability, and improved efficiency compared to MAPbI₃‐based devices. Nevertheless, the FA‐based spacers have rarely been studied for 2D Ruddlesden–Popper (RP) perovskites, which have drawn wide attention due to their enormous potential for fabricating efficient and stable photovoltaic devices. Here, for the first time, FA‐based derivative, 2‐thiopheneformamidinium (ThFA), is successfully synthesized and employed as an organic spacer for 2D RP PSCs. A precursor organic salts‐assisted crystal growth technique is further developed to prepare high quality 2D (ThFA)₂(MA)_n?1Pb_nI_3n+1 (nominal n = 3) perovskite films, which shows preferential vertical growth orientations, high charge carrier mobilities, and reduced trap density. As a result, the 2D RP PSCs with an inverted planar p‐i‐n structure exhibit a dramatically improved power conversion efficiency (PCE) from 7.23% to 16.72% with negligible hysteresis, which is among the highest PCE in 2D RP PSCs with low nominal n‐value of 3. Importantly, the optimized 2D PSCs exhibit a dramatically improved stability with less than 1% degradation after storage in N₂ for 3000 h without encapsulation. These findings provide an effective strategy for developing FA‐based organic spacers toward highly efficient and stable 2D PSCs.     

Long‐Lasting Nanophosphors Applied to UV‐Resistant and Energy Storage Perovskite Solar Cells

Recently, considerable progress is achieved in lab prototype perovskite solar cells (PSCs); however, the stability of outdoor applications of PSCs remains a challenge due to the high sensitivity of perovskite material under moist and ultraviolet (UV) light conditions. In this work, the UV photostability of PSC devices is improved by incorporating a photon downshifting layer—SrAl₂O₄: Eu²⁺, Dy³⁺ (SAED)—prepared using the pulsed laser deposition approach. Light‐induced deep trap states in the photoactive layer are depressed, and UV light‐induced device degradation is inhibited after the SAED modification. Optimized power conversion efficiency (PCE) of 17.8% is obtained through the enhanced light harvesting and reduced carrier recombination provided by SAED. More importantly, a solar energy storage effect due to the long‐persistent luminescence of SAED is obtained after light illumination is turned off. The introduction of downconverting material with long‐persistent luminescence in PSCs not only represents a new strategy to improve PCE and light stability by photoconversion from UV to visible light but also provides a new paradigm for solar energy storage.     

Development of Next‐Generation Organic‐Based Solar Cells: Studies on Dye‐Sensitized and Perovskite Solar Cells

Next‐generation organic solar cells such as dye‐sensitized solar cells (DSSCs) and perovskite solar cells (PSCs) are studied at the National Institute of Advanced Industrial Science and Technology (AIST), and their materials, electronic properties, and fabrication processes are investigated. To enhance the performance of DSSCs, the basic structure of an electron donor, π‐electron linker, and electron acceptor, i.e., D–π–A, is suggested. In addition, special organic dyes containing coumarin, carbazole, and triphenylamine electron donor groups are synthesized to find an effective dye structure that avoids charge recombination at electrode surfaces. Meanwhile, PSCs are manufactured using both a coating method and a laser deposition technique. The results of interfacial studies demonstrate that the level of the conduction band edge (CBE) of a compact TiO₂ layer is shifted after TiCl₄ treatment, which strongly affects the solar cell performance. Furthermore, a special laser deposition system is developed for the fabrication of the perovskite layers of PSCs, which facilitates the control over the deposition rate of methyl ammonium iodide used as their precursor.     

Stability and Dark Hysteresis Correlate in NiO‐Based Perovskite Solar Cells

In perovskite solar cells (PSCs), the interfaces are a weak link with respect to degradation. Electrochemical reactivity of the perovskite's halides has been reported for both molecular and polymeric hole selective layers (HSLs), and here it is shown that also NiO brings about this decomposition mechanism. Employing NiO as an HSL in p–i–n PSCs with power conversion efficiency (PCE) of 16.8%, noncapacitive hysteresis is found in the dark, which is attributable to the bias‐induced degradation of perovskite/NiO interface. The possibility of electrochemically decoupling NiO from the perovskite via the introduction of a buffer layer is explored. Employing a hybrid magnesium‐organic interlayer, the noncapacitive hysteresis is entirely suppressed and the device's electrical stability is improved. At the same time, the PCE is improved up to 18% thanks to reduced interfacial charge recombination, which enables more efficient hole collection resulting in higher V_oc and FF.     

Fusing Nanowires into Thin Films: Fabrication of Graded‐Heterojunction Perovskite Solar Cells with Enhanced Performance

Perovskite solar cells (PSCs) have recently experienced a rapid rise in power conversion efficiency (PCE), but the prevailing PSCs with conventional mesoscopic or planar device architectures still contain nonideal perovskite/hole‐transporting‐layer (HTL) interfaces, limiting further enhancement in PCE and device stability. In this work, CsPbBr₃ perovskite nanowires are employed for modifying the surface electronic states of bulk perovskite thin films, forming compositionally‐graded heterojunction at the perovskite/HTL interface of PSCs. The nanowire morphology is found to be key to achieving lateral homogeneity in the perovskite film surface states resulting in a near‐ideal graded heterojunction. The hidden role of such lateral homogeneity on the performance of graded‐heterojunction PSCs is revealed for the first time. The resulting PSCs show high PCE up to 21.4%, as well as high operational stability, which is superior to control PSCs fabricated without CsPbBr₃‐nanocrystals modification and with CsPbBr₃‐nanocubes modification. This study demonstrates the promise of controlled hybridization of perovskite nanowires and bulk thin films for more efficient and stable PSCs.     

A Low‐Temperature Thin‐Film Encapsulation for Enhanced Stability of a Highly Efficient Perovskite Solar Cell

The stability of a perovskite solar cell (PSC) is enhanced significantly by applying a customized thin‐film encapsulation (TFE). The TFE is composed of a multilayer stack of organic/inorganic layers deposited by initiated chemical vapor deposition and atomic layer deposition, respectively, whose water vapor transmission rate is on the order of 10^?4 g m^?2 d^?1 at an accelerated condition of 38 °C and 90% relative humidity (RH). The TFE is optimized, taking into consideration various aspects of thermosensitive PSCs. Lowering the process temperature is one of the most effective methods for minimizing the thermal damage to the PSC during the monolithic integration of the TFE onto PSC. The direct deposition of TFE onto a PSC causes less than 0.3% degradation (from 18.5% to 18.2%) in the power conversion efficiency, while the long‐term stability is substantially improved; the PSC retains 97% of its original efficiency after a 300 h exposure to an accelerated condition of 50 °C and 50% RH, confirming the enhanced stability of the PSC against moisture. This is the first demonstration of a TFE applied directly onto PSCs in a damage‐free manner, which will be a powerful tool for the development of highly stable PSCs with high efficiency.     

SrTiO3/Al2O3‐Graphene Electron Transport Layer for Highly Stable and Efficient Composites‐Based Perovskite Solar Cells with 20.6% Efficiency

For practical use of perovskite solar cells (PSCs) the instability issues of devices, attributed to degradation of perovskite molecules by moisture, ions migration, and thermal‐ and light‐instability, have to be solved. Herein, highly efficient and stable PSCs based on perovskite/Ag‐reduced graphene oxide (Ag‐rGO) and mesoporous Al₂O₃/graphene (mp‐AG) composites are reported. The mp‐AG composite is conductive with one‐order of magnitude higher mobility than mp‐TiO₂ and used for electron transport layer (ETL). Compared to the mp‐TiO₂ ETL based cells, the champion device based on perovskite/Ag‐rGO and SrTiO₃/mp‐AG composites shows overall a best performance (i.e., V_OC = 1.057 V, J_SC = 25.75 mA cm^?2, fill factor (FF) = 75.63%, and power conversion efficiency (PCE) = 20.58%). More importantly, the champion device without encapsulation exhibits not only remarkable thermal‐ and photostability but also long‐term stability, retaining 97–99% of the initial values of photovoltaic parameters and sustaining ≈93% of initial PCE over 300 d under ambient conditions.     

High‐Performance Flexible Perovskite Solar Cells via Precise Control of Electron Transport Layer

Flexible perovskite solar cells (f‐PSCs) have attracted great attention due to their promising commercial prospects. However, the performance of f‐PSCs is generally worse than that of their rigid counterparts. Herein, it is found that the unsatisfactory performance of planar heterojunction (PHJ) f‐PSCs can be attributed to the undesirable morphology of electron transport layer (ETL), which results from the rough surface of the flexible substrate. Precise control over the thickness and morphology of ETL tin dioxide (SnO₂) not only reduces the reflectance of the indium tin oxide (ITO) on polyethylene 2,6‐naphthalate (PEN) substrate and enhances photon collection, but also decreases the trap‐state densities of perovskite films and the charge transfer resistance, leading to a great enhancement of device performance. Consequently, the f‐PSCs, with a structure of PEN/ITO/SnO₂/perovskite/Spiro‐OMeTAD/Ag, exhibit a power conversion efficiency (PCE) up to 19.51% and a steady output of 19.01%. Furthermore, the f‐PSCs show a robust bending resistance and maintain about 95% of initial PCE after 6000 bending cycles at a bending radius of 8 mm, and they present an outstanding long‐term stability and retain about 90% of the initial performance after >1000 h storage in air (10% relative humidity) without encapsulation.     

Electron‐Beam‐Evaporated Nickel Oxide Hole Transport Layers for Perovskite‐Based Photovoltaics

High‐quality charge carrier transport materials are of key importance for stable and efficient perovskite‐based photovoltaics. This work reports on electron‐beam‐evaporated nickel oxide (NiO_x) layers, resulting in stable power conversion efficiencies (PCEs) of up to 18.5% when integrated into solar cells employing inkjet‐printed perovskite absorbers. By adding oxygen as a process gas and optimizing the layer thickness, transparent and efficient NiO_x hole transport layers (HTLs) are fabricated, exhibiting an average absorptance of only 1%. The versatility of the material is demonstrated for different absorber compositions and deposition techniques. As another highlight of this work, all‐evaporated perovskite solar cells employing an inorganic NiO_x HTL are presented, achieving stable PCEs of up to 15.4%. Along with good PCEs, devices with electron‐beam‐evaporated NiO_x show improved stability under realistic operating conditions with negligible degradation after 40 h of maximum power point tracking at 75 °C. Additionally, a strong improvement in device stability under ultraviolet radiation is found if compared to conventional perovskite solar cell architectures employing other metal oxide charge transport layers (e.g., titanium dioxide). Finally, an all‐evaporated perovskite solar mini‐module with a NiO_x HTL is presented, reaching a PCE of 12.4% on an active device area of 2.3 cm².     

Incorporating CsF into the PbI2 Film for Stable Mixed Cation‐Halide Perovskite Solar Cells

Adding a small amount of CsI into mixed cation‐halide perovskite film via a one‐step method has been demonstrated as an excellent strategy for high‐performance perovskite solar cells (PSCs). However, the one‐step method generally relies on an antisolvent washing process, which is hard to control and not suitable for fabricating large‐area devices. Here, CsF is employed and Cs is incorporated into perovskite film via a two‐step method. It is revealed that CsF can effectively diffuse into the PbI₂ seed film, and drastically enhances perovskite crystallization, leading to high‐quality Cs‐doped perovskite film with a very long photoluminescence carrier lifetime (1413 ns), remarkable light stability, thermal stability, and humidity stability. The fabricated PSCs show power conversion efficiency (PCE) of over 21%, and they are highly thermally stable: in the aging test at 60 °C for 300 h, 96% of the original PCE remains. The CsF incorporation process provides a new avenue for stable high‐performance PSCs.     

Precursor Engineering for Ambient‐Compatible Antisolvent‐Free Fabrication of High‐Efficiency CsPbI2Br Perovskite Solar Cells

High temperature stable inorganic CsPbX₃ (X: I, Br, or mixed halides) perovskites with their bandgap tailored by tuning the halide composition offer promising opportunities in the design of ideal top cells for high‐efficiency tandem solar cells. Unfortunately, the current high‐efficiency CsPbX₃ perovskite solar cells (PSCs) are prepared in vacuum, a moisture‐free glovebox or other low‐humidity conditions due to their poor moisture stability. Herein, a new precursor system (HCOOCs, HPbI₃, and HPbBr₃) is developed to replace the traditional precursors (CsI, PbI₂, and PbBr₂) commonly used for solar cells of this type. Both the experiments and calculations reveal that a new complex (HCOOH?Cs⁺) is generated in this precursor system. The new complex is not only stable against aging in humid air ambient at 91% relative humidity, but also effectively slows the perovskite crystallization, making it possible to eliminate the popular antisolvent used in the perovskite CsPbI₂Br film deposition. The CsPbI₂Br PSCs based on the new precursor system achieve a champion efficiency of 16.14%, the highest for inorganic PSCs prepared in ambient air conditions. Meanwhile, high air stability is demonstrated for an unencapsulated CsPbI₂Br PSC with 92% of the original efficiency remaining after more than 800 h aging in ambient air.     

Low‐Cost N,N′‐Bicarbazole‐Based Dopant‐Free Hole‐Transporting Materials for Large‐Area Perovskite Solar Cells

Despite the recent unprecedented development of efficient dopant‐free hole transporting materials (HTMs) for high‐performance perovskite solar cells (PSCs) on small‐area devices (≤0.1 cm²), low‐cost dopant‐free HTMs for large‐area PSCs (≥1 cm²) with high power conversion efficiencies (PCEs) have rarely been reported. Herein, two novel HTMs, 3,3′,6,6′ (or 2,2′,7,7′)‐tetrakis(N,N′‐di‐p‐methoxyphenylamine)‐N,N′‐bicarbazole (3,6 BCz‐OMeTAD or 2,7 BCz‐OMeTAD), are synthesized via an extremely simple route from very cheap raw materials. Owing to their excellent film‐forming abilities and matching energy levels, 3,6 BCz‐OMeTAD and 2,7 BCz‐OMeTAD can be successfully employed as a perfect ultrathin (≈30 nm) hole transporting layer in large‐area PSCs up to 1 cm². The 3,6 BCz‐OMeTAD and 2,7 BCz‐OMeTAD based large‐area PSCs show highest PCEs up to 17.0% and 17.6%, respectively. More importantly, high performance large‐area PSCs based on 2,7 BCz‐OMeTAD retain 90% of the initial efficiency after 2000 h storage in an ambient environment without encapsulation.