Self‐Assembled 2D Perovskite Layers for Efficient Printable Solar Cells

2D organic–inorganic hybrid Ruddlesden–Popper perovskites have emerged recently as candidates for the light‐absorbing layer in solar cell technology due largely to their impressive operational stability compared with their 3D‐perovskite counterparts. The methods reported to date for the preparation of efficient 2D perovksite layers for solar cells involve a nonscalable spin‐coating step. In this work, a facile, spin‐coating‐free, directly scalable drop‐cast method is reported for depositing precursor solutions that self‐assemble into highly oriented, uniform 2D‐perovskite films in air, yielding perovskite solar cells with power conversion efficiencies (PCE) of up to 14.9% (certified PCE of 14.33% ± 0.34 at 0.078 cm²). This is the highest PCE to date for a solar cell with 2D‐perovskite layers fabricated by nonspin‐coating method. The PCEs of the cells display no evidence of degradation after storage in a nitrogen glovebox for more than 5 months. 2D‐perovskite layer deposition using a slot‐die process is also investigated for the first time. Perovskite solar cells fabricated using batch slot‐die coating on a glass substrate or R2R slot‐die coating on a flexible substrate produced PCEs of 12.5% and 8.0%, respectively.     

A Low‐Temperature Thin‐Film Encapsulation for Enhanced Stability of a Highly Efficient Perovskite Solar Cell

The stability of a perovskite solar cell (PSC) is enhanced significantly by applying a customized thin‐film encapsulation (TFE). The TFE is composed of a multilayer stack of organic/inorganic layers deposited by initiated chemical vapor deposition and atomic layer deposition, respectively, whose water vapor transmission rate is on the order of 10^?4 g m^?2 d^?1 at an accelerated condition of 38 °C and 90% relative humidity (RH). The TFE is optimized, taking into consideration various aspects of thermosensitive PSCs. Lowering the process temperature is one of the most effective methods for minimizing the thermal damage to the PSC during the monolithic integration of the TFE onto PSC. The direct deposition of TFE onto a PSC causes less than 0.3% degradation (from 18.5% to 18.2%) in the power conversion efficiency, while the long‐term stability is substantially improved; the PSC retains 97% of its original efficiency after a 300 h exposure to an accelerated condition of 50 °C and 50% RH, confirming the enhanced stability of the PSC against moisture. This is the first demonstration of a TFE applied directly onto PSCs in a damage‐free manner, which will be a powerful tool for the development of highly stable PSCs with high efficiency.     

Reducing Saturation‐Current Density to Realize High‐Efficiency Low‐Bandgap Mixed Tin–Lead Halide Perovskite Solar Cells

The unsatisfactory performance of low‐bandgap mixed tin (Sn)–lead (Pb) halide perovskite subcells has been one of the major obstacles hindering the progress of the power conversion efficiencies (PCEs) of all‐perovskite tandem solar cells. By analyzing dark‐current density and distribution, it is identified that charge recombination at grain boundaries is a key factor limiting the performance of low‐bandgap mixed Sn–Pb halide perovskite subcells. It is further found that bromine (Br) incorporation can effectively passivate grain boundaries and lower the dark current density by two–three orders of magnitude. By optimizing the Br concentration, low‐bandgap (1.272 eV) mixed Sn–Pb halide perovskite solar cells are fabricated with open‐circuit voltage deficits as low as 0.384 V and fill factors as high as 75%. The best‐performing device demonstrates a PCE of >19%. The results suggest an important direction for improving the performance of low‐bandgap mixed Sn–Pb halide perovskite solar cells.     

Polymer Doping for High‐Efficiency Perovskite Solar Cells with Improved Moisture Stability

Each component layer in a perovskite solar cell plays an important role in the cell performance. Here, a few types of polymers including representative p‐type and n‐type semiconductors, and a classical insulator, are chosen to dope into a perovskite film. The long‐chain polymer helps to form a network among the perovskite crystalline grains, as witnessed by the improved film morphology and device stability. The dewetting process is greatly suppressed by the cross‐linking effect of the polymer chains, thereby resulting in uniform perovskite films with large grain sizes. Moreover, it is found that the polymer‐doped perovskite shows a reduced trap‐state density, likely due to the polymer effectively passivating the perovskite grain surface. Meanwhile the doped polymer formed a bridge between grains for efficient charge transport. Using this approach, the solar cell efficiency is improved from 17.43% to as high as 19.19%, with a much improved stability. As it is not required for the polymer to have a strict energy level matching with the perovskite, in principle, one may use a variety of polymers for this type of device design.     

Efficient Indium‐Doped TiOx Electron Transport Layers for High‐Performance Perovskite Solar Cells and Perovskite‐Silicon Tandems

In addition to a good perovskite light absorbing layer, the hole and electron transport layers play a crucial role in achieving high‐efficiency perovskite solar cells. Here, a simple, one‐step, solution‐based method is introduced for fabricating high quality indium‐doped titanium oxide electron transport layers. It is shown that indium‐doping improves both the conductivity of the transport layer and the band alignment at the ETL/perovskite interface compared to pure TiO₂, boosting the fill‐factor and voltage of perovskite cells. Using the optimized transport layers, a high steady‐state efficiency of 17.9% for CH₃NH₃PbI₃‐based cells and 19.3% for Cs_0.05(MA_0.17FA_0.83)_0.95Pb(I_0.83Br_0.17)₃‐based cells is demonstrated, corresponding to absolute efficiency gains of 4.4% and 1.2% respectively compared to TiO₂‐based control cells. In addition, a steady‐state efficiency of 16.6% for a semi‐transparent cell is reported and it is used to achieve a four‐terminal perovskite‐silicon tandem cell with a steady‐state efficiency of 24.5%.     

Simultaneous Improvement in Efficiency and Stability of Low‐Temperature‐Processed Perovskite Solar Cells by Interfacial Control

In most current state‐of‐the‐art perovskite solar cells (PSCs), high‐temperature (≈500 °C)‐sintered metal oxides are employed as electron‐transporting layers (ETLs). To lower the device processing temperature, the development of low‐temperature‐processable ETL materials (such as solution‐processed ZnO) has received growing attention. However, thus far, the use of solution‐processed ZnO is limited because the reverse decomposition reaction that occurs at ZnO/perovskite interfaces significantly degrades the charge collection and stability of PSCs. In this work, the reverse decomposition reaction is successfully retarded by sulfur passivation of solution‐processed ZnO. The sulfur passivation of ZnO by a simple chemical means, efficiently reduces the oxygen‐deficient defects and surface oxygen‐containing groups, thus effectively preventing reverse decomposition reactions during and after formation of the perovskite active layers. Using the low‐temperature‐processed sulfur‐passivated ZnO (ZnO–S), perovskite layers with higher crystallinity and larger grain size are obtained, while the charge extraction at the ZnO/perovskite interface is significantly improved. As a result, the ZnO–S‐based PSCs achieve substantially improved power‐conversion‐efficiency (PCE) (19.65%) and long‐term air‐storage stability (90% retention after 40 d) compared with pristine ZnO‐based PSCs (16.51% and 1% retention after 40 d). Notably, the PCE achieved is the highest recorded (19.65%) for low‐temperature ZnO‐based PSCs.     

High‐Performance Flexible Perovskite Solar Cells via Precise Control of Electron Transport Layer

Flexible perovskite solar cells (f‐PSCs) have attracted great attention due to their promising commercial prospects. However, the performance of f‐PSCs is generally worse than that of their rigid counterparts. Herein, it is found that the unsatisfactory performance of planar heterojunction (PHJ) f‐PSCs can be attributed to the undesirable morphology of electron transport layer (ETL), which results from the rough surface of the flexible substrate. Precise control over the thickness and morphology of ETL tin dioxide (SnO₂) not only reduces the reflectance of the indium tin oxide (ITO) on polyethylene 2,6‐naphthalate (PEN) substrate and enhances photon collection, but also decreases the trap‐state densities of perovskite films and the charge transfer resistance, leading to a great enhancement of device performance. Consequently, the f‐PSCs, with a structure of PEN/ITO/SnO₂/perovskite/Spiro‐OMeTAD/Ag, exhibit a power conversion efficiency (PCE) up to 19.51% and a steady output of 19.01%. Furthermore, the f‐PSCs show a robust bending resistance and maintain about 95% of initial PCE after 6000 bending cycles at a bending radius of 8 mm, and they present an outstanding long‐term stability and retain about 90% of the initial performance after >1000 h storage in air (10% relative humidity) without encapsulation.     

High‐Efficiency CsPbI2Br Perovskite Solar Cells with Dopant‐Free Poly(3‐hexylthiophene) Hole Transporting Layers

CsPbI₂Br is emerging as a promising all‐inorganic material for perovskite solar cells (PSCs) due to its more stable lattice structure and moisture resistance compared to CsPbI₃, although its device performance is still much behind this counterpart. Herein, a preannealing process is developed and systematically investigated to achieve high‐quality CsPbI₂Br films by regulating the nucleation and crystallization of perovskite. The preannealing temperature and time are specifically optimized for a dopant‐free poly(3‐hexylthiophene) (P3HT)‐based device to target dopant‐induced drastic performance degradation for spiro‐OMeTAD‐based devices. The resulting P3HT‐based device exhibits comparable power conversion efficiency (PCE) to spiro‐OMeTAD‐based devices but much enhanced ambient stability with over 95% PCE after 1300 h. A diphenylamine derivative is introduced as a buffer layer to improve the energy‐level mismatch between CsPbI₂Br and P3HT. A record‐high PCE of 15.50% for dopant‐free P3HT‐based CsPbI₂Br PSCs is achieved by alleviating the open‐circuit voltage loss with the buffer layer. These results demonstrate that the preannealing processing together with a suitable buffer layer are applicable strategies for developing dopant‐free P3HT PSCs with high efficiency and stability.     

New Strategy for Two‐Step Sequential Deposition: Incorporation of Hydrophilic Fullerene in Second Precursor for High‐Performance p‐i‐n Planar Perovskite Solar Cells

In p‐i‐n planar perovskite solar cells (pero‐SCs) based on methylammonium lead iodide (MAPbI₃) perovskite, high‐quality MAPbI₃ film, perfect interfacial band alignment and efficient charge extracting ability are critical for high photovoltaic performance. In this work, a hydrophilic fullerene derivative [6,6]‐phenyl‐C₆₁‐butyric acid‐(3,4,5‐tris(2‐(2‐(2‐methoxyethoxy)ethoxy)ethoxy)phenyl)methanol ester (PCBB‐OEG) is introduced as additive in the methylammonium iodide precursor solution in the preparation of MAPbI₃ perovskite film by two‐step sequential deposition method, and obtained a top‐down gradient distribution with an ultrathin top layer of PCBB‐OEG. Meanwhile, a high‐quality perovskite film with high crystallinity, less trap‐states, and dense‐grained uniform morphology can well grow on both hydrophilic (poly(3,4‐ethylenedioxythiophene)/poly(styrenesulfonic acid)) and hydrophobic (polytriarylamine, PTAA) hole transport layers. When the PCBB‐OEG‐containing perovskite film (pero‐0.1) is prepared in a p‐i‐n planar pero‐SC with the configuration of ITO/PTAA/pero‐0.1/[6,6]‐phenyl‐C₆₁‐butyric acid methyl ester/Al, the device delivers a promising power conversion efficiency (PCE) of 20.2% without hysteresis, which is one of the few PCE over 20% for the p‐i‐n planar pero‐SCs. Importantly, the pero‐0.1‐based device shows an excellent stability that can retain 98.4% of its initial PCE after being exposed for 300 h under ambient atmosphere with a high humidity, and the flexible pero‐SCs based on pero‐0.1 also demonstrate a promising PCE of 18.1%.     

Highly Reproducible Sn‐Based Hybrid Perovskite Solar Cells with 9% Efficiency

The low power conversion efficiency (PCE) of tin‐based hybrid perovskite solar cells (HPSCs) is mainly attributed to the high background carrier density due to a high density of intrinsic defects such as Sn vacancies and oxidized species (Sn⁴⁺) that characterize Sn‐based HPSCs. Herein, this study reports on the successful reduction of the background carrier density by more than one order of magnitude by depositing near‐single‐crystalline formamidinium tin iodide (FASnI₃) films with the orthorhombic a‐axis in the out‐of‐plane direction. Using these highly crystalline films, obtained by mixing a very small amount (0.08 m ) of layered (2D) Sn perovskite with 0.92 m (3D) FASnI₃, for the first time a PCE as high as 9.0% in a planar p–i–n device structure is achieved. These devices display negligible hysteresis and light soaking, as they benefit from very low trap‐assisted recombination, low shunt losses, and more efficient charge collection. This represents a 50% improvement in PCE compared to the best reference cell based on a pure FASnI₃ film using SnF₂ as a reducing agent. Moreover, the 2D/3D‐based HPSCs show considerable improved stability due to the enhanced robustness of the perovskite film compared to the reference cell.     

Molecular Engineering Using an Anthanthrone Dye for Low‐Cost Hole Transport Materials: A Strategy for Dopant‐Free,High‐Efficiency,and Stable Perovskite Solar Cells

In this report, highly efficient and humidity‐resistant perovskite solar cells (PSCs) using two new small molecule hole transporting materials (HTM) made from a cost‐effective precursor anthanthrone (ANT) dye, namely, 4,10‐bis(1,2‐dihydroacenaphthylen‐5‐yl)‐6,12‐bis(octyloxy)‐6,12‐dihydronaphtho[7,8,1,2,3‐nopqr]tetraphene (ACE‐ANT‐ACE) and 4,4′‐(6,12‐bis(octyloxy)‐6,12‐dihydronaphtho[7,8,1,2,3‐nopqr]tetraphene‐4,10‐diyl)bis(N,N‐bis(4‐methoxyphenyl)aniline) (TPA‐ANT‐TPA) are presented. The newly developed HTMs are systematically compared with the conventional 2,2′,7,7′‐tetrakis(N,N′‐di‐p‐methoxyphenylamino)‐9,9′‐spirbiuorene (Spiro‐OMeTAD). ACE‐ANT‐ACE and TPA‐ANT‐TPA are used as a dopant‐free HTM in mesoscopic TiO₂/CH₃NH₃PbI₃/HTM solid‐state PSCs, and the performance as well as stability are compared with Spiro‐OMeTAD‐based PSCs. After extensive optimization of the metal oxide scaffold and device processing conditions, dopant‐free novel TPA‐ANT‐TPA HTM‐based PSC devices achieve a maximum power conversion efficiency (PCE) of 17.5% with negligible hysteresis. An impressive current of 21 mA cm^?2 is also confirmed from photocurrent density with a higher fill factor of 0.79. The obtained PCE of 17.5% utilizing TPA‐ANT‐TPA is higher performance than the devices prepared using doped Spiro‐OMeTAD (16.8%) as hole transport layer at 1 sun condition. It is found that doping of LiTFSI salt increases hygroscopic characteristics in Spiro‐OMeTAD; this leads to the fast degradation of solar cells. While, solar cells prepared using undoped TPA‐ANT‐TPA show dewetting and improved stability. Additionally, the new HTMs form a fully homogeneous and completely covering thin film on the surface of the active light absorbing perovskite layers that acts as a protective coating for underlying perovskite films. This breakthrough paves the way for development of new inexpensive, more stable, and highly efficient ANT core based lower cost HTMs for cost‐effective, conventional, and printable PSCs.     

Graphene‐Based Electron Transport Layers in Perovskite Solar Cells: A Step‐Up for an Efficient Carrier Collection

The electron transport layer (ETL) plays a fundamental role in perovskite solar cells. Recently, graphene‐based ETLs have been proved to be good candidate for scalable fabrication processes and to achieve higher carrier injection with respect to most commonly used ETLs. Here, the effects of different graphene‐based ETLs in sensitized methylammonium lead iodide (MAPI) solar cells are experimentally studied. By means of time‐integrated and picosecond time‐resolved photoluminescence techniques, the carrier recombination dynamics in MAPI films embedded in different ETLs is investigated. Using graphene doped mesoporous TiO₂ (G+mTiO₂) with the addition of a lithium‐neutralized graphene oxide (GO‐Li) interlayer as ETL, it is found find that the carrier collection efficiency is increased by about a factor two with respect to standard mTiO₂. Taking advantage of the absorption coefficient dispersion, the MAPI layer morphology is probed, along the thickness, finding that the MAPI embedded in the ETL composed by G+mTiO₂ plus GO‐Li brings to a very good crystalline quality of the MAPI layer with a trap density about one order of magnitude lower than that found with the other ETLs. In addition, this ETL freezes MAPI at the tetragonal phase, regardless of the temperature. Graphene‐based ETLs can open the way to significant improvement of perovskite solar cells.     

Carbon Nanoparticles in High‐Performance Perovskite Solar Cells

In the past few years, organic–inorganic metal halide ABX₃ perovskites (A = Rb, Cs, methylammonium, formamidinium (FA); B = Pb, Sn; X = Cl, Br, I) have rapidly emerged as promising materials for photovoltaic applications. Tuning the film morphology by various deposition techniques and additives is crucial to achieve solar cells with high performance and long‐term stability. In this work, carbon nanoparticles (CNPs) containing functional groups are added to the perovskite precursor solution for fabrication of fluorine‐doped tin oxide/TiO₂/perovskite/spiro‐OMeTAD/gold devices. With the addition of CNPs, the perovskite films are thermally more stable, contain larger grains, and become more hydrophobic. NMR experiments provide strong evidence that the functional groups of the CNPs interact with FA cations already in the precursor solution. The fabricated solar cells show a power‐conversion efficiency of 18% and negligible hysteresis.     

New Strategies for Defect Passivation in High‐Efficiency Perovskite Solar Cells

Lead halide perovskite solar cells now show excellent efficiencies and encouraging levels of stability. Further improvements in performance require better control of the trap states which are considered to be associated with vacancies and defects at crystallite surfaces. Herein, a reflection on the ways in which these traps can be mitigated is presented by improving the quality of the perovskite layer and interfaces in fully assembled device configurations. In this review, the most recent design strategies reported in the literature, which have been explored to tune grain orientation, to passivate defects, and to improve charge‐carrier lifetimes, are presented. Specifically, the advances made with single‐cation, mixed‐cation and/or mixed‐halide, and 3D/2D bilayer‐based light absorbers are discussed. The interfacial, compositional, and band alignment engineering along with their consequent effects on the open‐circuit voltage, power conversion efficiency, and stability are a particular focus.