Infrared Light Management Using a Nanocrystalline Silicon Oxide Interlayer in Monolithic Perovskite/Silicon Heterojunction Tandem Solar Cells with Efficiency above 25%

Perovskite/silicon tandem solar cells are attractive for their potential for boosting cell efficiency beyond the crystalline silicon (Si) single‐junction limit. However, the relatively large optical refractive index of Si, in comparison to that of transparent conducting oxides and perovskite absorber layers, results in significant reflection losses at the internal junction between the cells in monolithic (two‐terminal) devices. Therefore, light management is crucial to improve photocurrent absorption in the Si bottom cell. Here it is shown that the infrared reflection losses in tandem cells processed on a flat silicon substrate can be significantly reduced by using an optical interlayer consisting of nanocrystalline silicon oxide. It is demonstrated that 110 nm thick interlayers with a refractive index of 2.6 (at 800 nm) result in 1.4 mA cm^?² current gain in the silicon bottom cell. Under AM1.5G irradiation, the champion 1 cm² perovskite/silicon monolithic tandem cell exhibits a top cell + bottom cell total current density of 38.7 mA cm^?2 and a certified stabilized power conversion efficiency of 25.2%.     

Perovskite Tandem Solar Cells

The meteoric rise of perovskite single‐junction solar cells has been accompanied by similar stunning developments in perovskite tandem solar cells. Debuting with efficiencies less than 14% in 2014, silicon–perovskite solar cells are now above 25% and will soon surpass record silicon single‐junction efficiencies. Unconstrained by the Shockley–Quiesser single‐junction limit, perovskite tandems suggest a real possibility of true third‐generation thin‐film photovoltaics; monolithic all‐perovskite tandems have reached 18% efficiency and will likely pass perovskite single‐junction efficiencies within the next 5 years. Inorganic–organic metal–halide perovskites are ideal candidates for inclusion in tandem solar cells due to their high radiative recombination efficiencies, excellent absorption, long‐range charge‐transport, and broad ability to tune the bandgap. In this progress report, the development of perovskite tandem cells is reviewed, with presentation of their key motivations and challenges. In detail, it presents an overview of recombination layer materials, bandgap‐tuneability, transparent contact architectures, and perovskite compounds for use in tandems. Theoretical estimates of efficiency for future tandem and triple‐junction perovskite cells are presented, outlining roadmaps for future focused research.     

Four‐Terminal Perovskite/Silicon Multijunction Solar Modules

Multijunction solar cells employing perovskite and crystalline‐silicon (c‐Si) light absorbers bear the exciting potential to surpass the efficiency limit of market‐leading single‐junction c‐Si solar cells. However, scaling up this technology and maintaining high efficiency over large areas are challenging as evidenced by the small‐area perovskite/c‐Si multijunction solar cells reported so far. In this work, a scalable four‐terminal multijunction solar module design employing a 4 cm² semitransparent methylammonium lead triiodide perovskite solar module stacked on top of an interdigitated back contact c‐Si solar cell of identical area is demonstrated. With a combination of optimized transparent electrodes and efficient module design, the perovskite/c‐Si multijunction solar modules exhibit power conversion efficiencies of 22.6% on 0.13 cm² and 20.2% on 4 cm² aperture area. Furthermore, a detailed optoelectronic loss analysis along with strategies to enhance the performance is discussed.     

Hybrid Perovskite‐Organic Flexible Tandem Solar Cell Enabling Highly Efficient Electrocatalysis Overall Water Splitting

Perovskite‐organic tandem solar cells are attracting more attention due to their potential for highly efficient and flexible photovoltaic device. In this work, efficient perovskite‐organic monolithic tandem solar cells integrating the wide bandgap perovskite (1.74 eV) and low bandgap organic active PBDB‐T:SN6IC‐4F (1.30 eV) layer, which serve as the top and bottom subcell, respectively, are developed. The resulting perovskite‐organic tandem solar cells with passivated wide‐bandgap perovskite show a remarkable power conversion efficiency (PCE) of 15.13%, with an open‐circuit voltage (V_oc) of 1.85 V, a short‐circuit photocurrent (J_sc) of 11.52 mA cm^?2, and a fill factor (FF) of 70.98%. Thanks to the advantages of low temperature fabrication processes and the flexibility properties of the device, a flexible tandem solar cell which obtain a PCE of 13.61%, with V_oc of 1.80 V, J_sc of 11.07 mA cm^?2, and FF of 68.31% is fabricated. Moreover, to demonstrate the achieved high V_oc in the tandem solar cells for potential applications, a photovoltaic (PV)‐driven electrolysis system combing the tandem solar cell and water splitting electrocatalysis is assembled. The integrated device demonstrates a solar‐to‐hydrogen efficiency of 12.30% and 11.21% for rigid, and flexible perovskite‐organic tandem solar cell based PV‐driven electrolysis systems, respectively.     

High Efficiency Perovskite‐Silicon Tandem Solar Cells: Effect of Surface Coating versus Bulk Incorporation of 2D Perovskite

Mixed‐dimensional perovskite solar cells combining 3D and 2D perovskites have recently attracted wide interest owing to improved device efficiency and stability. Yet, it remains unclear which method of combining 3D and 2D perovskites works best to obtain a mixed‐dimensional system with the advantages of both types. To address this, different strategies of combining 2D perovskites with a 3D perovskite are investigated, namely surface coating and bulk incorporation. It is found that through surface coating with different aliphatic alkylammonium bulky cations, a Ruddlesden–Popper “quasi‐2D” perovskite phase is formed on the surface of the 3D perovskite that passivates the surface defects and significantly improves the device performance. In contrast, incorporating those bulky cations into the bulk induces the formation of the pure 2D perovskite phase throughout the bulk of the 3D perovskite, which negatively affects the crystallinity and electronic structure of the 3D perovskite framework and reduces the device performance. Using the surface‐coating strategy with n‐butylammonium bromide to fabricate semitransparent perovskite cells and combining with silicon cells in four‐terminal tandem configuration, 27.7% tandem efficiency with interdigitated back contact silicon bottom cells (size‐unmatched) and 26.2% with passivated emitter with rear locally diffused silicon bottom cells is achieved in a 1 cm² size‐matched tandem.     

Efficient Indium‐Doped TiOx Electron Transport Layers for High‐Performance Perovskite Solar Cells and Perovskite‐Silicon Tandems

In addition to a good perovskite light absorbing layer, the hole and electron transport layers play a crucial role in achieving high‐efficiency perovskite solar cells. Here, a simple, one‐step, solution‐based method is introduced for fabricating high quality indium‐doped titanium oxide electron transport layers. It is shown that indium‐doping improves both the conductivity of the transport layer and the band alignment at the ETL/perovskite interface compared to pure TiO₂, boosting the fill‐factor and voltage of perovskite cells. Using the optimized transport layers, a high steady‐state efficiency of 17.9% for CH₃NH₃PbI₃‐based cells and 19.3% for Cs_0.05(MA_0.17FA_0.83)_0.95Pb(I_0.83Br_0.17)₃‐based cells is demonstrated, corresponding to absolute efficiency gains of 4.4% and 1.2% respectively compared to TiO₂‐based control cells. In addition, a steady‐state efficiency of 16.6% for a semi‐transparent cell is reported and it is used to achieve a four‐terminal perovskite‐silicon tandem cell with a steady‐state efficiency of 24.5%.     

Over 17% Efficiency Stand‐Alone Solar Water Splitting Enabled by Perovskite‐Silicon Tandem Absorbers

Realizing solar‐to‐hydrogen (STH) efficiencies close to 20% using low‐cost semiconductors remains a major step toward accomplishing the practical viability of photoelectrochemical (PEC) hydrogen generation technologies. Dual‐absorber tandem cells combining inexpensive semiconductors are a promising strategy to achieve high STH efficiencies at a reasonable cost. Here, a perovskite photovoltaic biased silicon (Si) photoelectrode is demonstrated for highly efficient stand‐alone solar water splitting. A p⁺nn⁺ ‐Si/Ti/Pt photocathode is shown to present a remarkable photon‐to‐current efficiency of 14.1% under biased condition and stability over three days under continuous illumination. Upon pairing with a semitransparent mixed perovskite solar cell of an appropriate bandgap with state‐of‐the‐art performance, an unprecedented 17.6% STH efficiency is achieved for self‐driven solar water splitting. Modeling and analysis of the dual‐absorber PEC system reveal that further work into replacing the noble‐metal catalyst materials with earth‐abundant elements and improvement of perovskite fill factor will pave the way for the realization of a low‐cost high‐efficiency PEC system.     

Monolithic Perovskite/Si Tandem Solar Cells: Pathways to Over 30% Efficiency

The article commences with a review focusing on three critical aspects of the perovskite/Si tandem technology: the evolution of efficiencies to date, comparisons of Si subcell choices, and the interconnection design strategies. Building on this review, a clear route is provided for minimizing optical losses aided by optical simulations of a recently reported high‐efficiency perovskite/Si tandem system, optimizations which result in tandem current densities of ≈20 mAcm^?2 with front‐side texture. The primary focus is on electrical modeling on the Si‐subcell, in order to understand the efficiency potential of this cell under filtered light in a tandem configuration. The possibility of increasing the Si subcell efficiency by 1% absolute is offered through joint improvements to the bulk lifetime, which exceeds 4 ms, and improves surface passivation quality to saturation current densities below 10 fA cm^?2. Polycrystalline‐Si/SiO_x passivating contacts are proposed as a promising alternative to partial‐area rear contacts, with the potential for further simplifying cell fabrication and improving device performance. A combination of optical modeling of the complete tandem structure alongside electrical modeling of the Si‐subcell, both with state‐of‐the‐art modeling tools, provides the first complete picture of the practical efficiency potential of perovskite/Si tandems.     

Vacuum‐Assisted Growth of Low‐Bandgap Thin Films (FA0.8MA0.2Sn0.5Pb0.5I3) for All‐Perovskite Tandem Solar Cells

All‐perovskite multijunction photovoltaics, combining a wide‐bandgap (WBG) perovskite top solar cell (E_G ≈1.6–1.8 eV) with a low‐bandgap (LBG) perovskite bottom solar cell (E_G < 1.3 eV), promise power conversion efficiencies (PCEs) >33%. While the research on WBG perovskite solar cells has advanced rapidly over the past decade, LBG perovskite solar cells lack PCE as well as stability. In this work, vacuum‐assisted growth control (VAGC) of solution‐processed LBG perovskite thin films based on mixed Sn–Pb perovskite compositions is reported. The reported perovskite thin films processed by VAGC exhibit large columnar crystals. Compared to the well‐established processing of LBG perovskites via antisolvent deposition, the VAGC approach results in a significantly enhanced charge‐carrier lifetime. The improved optoelectronic characteristics enable high‐performance LBG perovskite solar cells (1.27 eV) with PCEs up to 18.2% as well as very efficient four‐terminal all‐perovskite tandem solar cells with PCEs up to 23%. Moreover, VAGC leads to promising reproducibility and potential in the fabrication of larger active‐area solar cells up to 1 cm².     

Rubidium Multication Perovskite with Optimized Bandgap for Perovskite‐Silicon Tandem with over 26% Efficiency

Rubidium (Rb) is explored as an alternative cation to use in a novel multication method with the formamidinium/methylammonium/cesium (Cs) system to obtain 1.73 eV bangap perovskite cells with negligible hysteresis and steady state efficiency as high as 17.4%. The study shows the beneficial effect of Rb in improving the crystallinity and suppressing defect migration in the perovskite material. The light stability of the cells examined under continuous illumination of 12 h is improved upon the addition of Cs and Rb. After several cycles of 12 h light–dark, the cell retains 90% of its initial efficiency. In parallel, sputtered transparent conducting oxide thin films are developed to be used as both rear and front transparent contacts on quartz substrate with less than 5% parasitic absorption of near infrared wavelengths. Using these developments, semi‐transparent perovskite cells are fabricated with steady state efficiency of up to 16.0% and excellent average transparency of ≈84% between 720 and 1100 nm. In a tandem configuration using a 23.9% silicon cell, 26.4% efficiency (10.4% from the silicon cell) in a mechanically stacked tandem configuration is demonstrated which is very close to the current record for a single junction silicon cell of 26.6%.     

Breakthrough Carbon Nanotube–Silicon Heterojunction Solar Cells

The latest advances in carbon nanotube–silicon heterojunction solar cells are combined with a new doping protocol based on the outstanding electron withdrawing properties and excellent silicon surface passivation ability of sulfonated polytetrafluoroethylene (Nafion). Using this new dopant for carbon nanotube–silicon solar cells, advanced substrate design, and an optimized antireflective texture fast etch with organic base, breakthrough performance is obtained from research grade devices with active areas of 1 and 5 cm², which yield power conversion efficiencies of 17.2 and 15.5%, respectively.     

Exploring Inorganic Binary Alkaline Halide to Passivate Defects in Low‐Temperature‐Processed Planar‐Structure Hybrid Perovskite Solar Cells

Planar perovskite solar cells obtained by low‐temperature solution processing are of great promise, given a high compatibility with flexible substrates and perovskite‐based tandem devices, whilst benefitting from relatively simple manufacturing methods. However, ionic defects at surfaces usually cause detrimental carrier recombination, which links to one of dominant losses in device performance, slow transient responses, and notorious hysteresis. Here, it is shown that several different types of ionic defects can be simultaneously passivated by simple inorganic binary alkaline halide salts with their cations and anions. Compared to previous literature reports, this work demonstrates a promising passivation technology for perovskite solar cells. The efficient defect passivation significantly suppresses the recombination at the SnO₂/perovskite interface, contributing to an increase in the open‐circuit voltage, the fast response of steady‐state efficiency, and the elimination of hysteresis. By this strong leveraging of multiple‐element passivation, low‐temperature‐processed, planar‐structured perovskite solar cells of 20.5% efficiencies, having negligible hysteresis, are obtained. Moreover, this defect‐passivation enhances the stability of solar cells with efficiency beyond 20%, retaining 90% of their initial performance after 30 d. This approach aims at developing the concept of defect engineering, which can be expanded to multiple‐element passivation from monoelement counterparts using simple and low‐cost inorganic materials.     

Charge Transfer from Methylammonium Lead Iodide Perovskite to Organic Transport Materials: Efficiencies,Transfer Rates,and Interfacial Recombination

Perovskite‐based photovoltaics have been rapidly developed, with record power conversion efficiencies now exceeding 22%. In order to rationally design efficient and stable perovskite solar cells, it is important to understand not only charge trapping and recombination events, but also processes occurring at the perovskite/transport material (TM) interface, such as charge transfer and interfacial recombination. In this work, time‐resolved microwave conductivity measurements are performed to investigate these interfacial processes for methylammonium lead iodide and various state‐of‐the‐art organic TMs. A global kinetic model is developed, which accurately describes both the dynamics of excess charges in the perovskite layer and transfer to charge‐specific TMs. The authors conclude that for state‐of‐the‐art materials, such as Spiro‐OMeTAD and PCBM, the charge extraction efficiency is not significantly affected by intra‐band gap traps for trap densities under 10¹⁵ cm^–3. Finally, the transfer rates to C60, PCBM, EDOT‐OMeTPA, and Spiro‐OMeTAD are sufficient to outcompete second order recombination under excitation densities representative for illumination by AM1.5.     

Dual Functional Electron‐Selective Contacts Based on Silicon Oxide/Magnesium: Tailoring Heterointerface Band Structures while Maintaining Surface Passivation

Silicon (Si)‐based dopant‐free heterojunction solar cells (SCs) featuring carrier‐selective contacts (CSCs) have attracted considerable interest due to the extreme simplifications in their device structure and manufacturing procedure. However, these SCs are limited by the unsatisfactory contact properties on both sides of the junction, and their efficiencies are not comparable with those of commercially available Si SCs. In this report, a high‐performance silicon‐oxide/magnesium (SiO_x/Mg) electron‐selective contact (ESC) design is described. Combining an ultrathin SiO_x and a low work function Mg layer, the novel ESC simultaneously yields low recombinative and resistive losses. In addition, deposition of Mg on SiO_x relaxes the restriction on the threshold thickness of the SiO_x for electron tunneling and therefore broadens the optimization space for rear‐sided passivation. Meanwhile, hole‐selective contact with boosted light harvesting and suppressed interfacial recombination is achieved by forming a fully conformal contact between the conducting poly(3,4‐ethylene dioxythiophene): poly(styrenesulfonate) (PEDOT: PSS) and periodic Si pyramid arrays. With the double‐sided carrier‐selective contact designs, PEDOT: PSS/Si/SiO_x/Mg SCs with efficiency of 15% are finally obtained via a totally dopant‐free processing. Subsequent calculations further indicate a pathway for the improvement of these contacts toward an efficiency that is competitive with conventionally diffused pn junction SCs.     

Efficient Organic Solar Cells with Extremely High Open‐Circuit Voltages and Low Voltage Losses by Suppressing Nonradiative Recombination Losses

One of the most important factors that limits the efficiencies of bulk‐heterojunction organic solar cells (OSCs) is the modest open‐circuit voltage (V_oc) due to their large voltage loss (V_loss) caused by significant nonradiative recombination loss. To boost the performance of OSCs toward their theoretical limit, developing high‐performance donor: acceptor systems featuring low V_loss with suppressed nonradiative recombination losses (<0.30 V) is desired. Herein, high performance OSCs based on a polymer donor benzodithiophene‐difluorobenzoxadiazole‐2‐decyltetradecyl (BDT‐ffBX‐DT) and perylenediimide‐based acceptors (PDI dimer with spirofluorene linker (SFPDI), PDI4, and PDI6) are reported which offer a high power conversion efficiency (PCE) of 7.5%, 56% external quantum efficiency associated with very high V_oc (>1.10 V) and low V_loss (<0.60 V). A high V_oc up to 1.23 V is achieved, which is among the highest values reported for OSCs with a PCE beyond 6%, to date. These attractive results are benefit from the suppressed nonradiative recombination voltage loss, which is as low as 0.20 V. This value is the lowest value for OSCs so far and is comparable to high performance crystalline silicon and perovskite solar cells. These results show that OSCs have the potential to achieve comparable V_oc and voltage loss as inorganic photovoltaic technologies.     

Enhanced Efficiency of Hot‐Cast Large‐Area Planar Perovskite Solar Cells/Modules Having Controlled Chloride Incorporation

Organic–inorganic perovskite photovoltaics are an emerging solar technology. Developing materials and processing techniques that can be implemented in large‐scale manufacturing is extremely important for realizing the potential of commercialization. Here we report a hot‐casting process with controlled Cl^? incorporation which enables high stability and high power‐conversion‐efficiencies (PCEs) of 18.2% for small area (0.09 cm²) and 15.4% for large‐area (≈1 cm²) single solar cells. The enhanced performance versus tri‐iodide perovskites can be ascribed to longer carrier diffusion lengths, improved uniformity of the perovskite film morphology, favorable perovskite crystallite orientation, a halide concentration gradient in the perovskite film, and reduced recombination by introducing Cl^?. Additionally, Cl^? improves the device stability by passivating the reaction between I^? and the silver electrode. High‐quality thin films deployed over a large‐area 5 cm × 5 cm eight‐cell module have been fabricated and exhibit an active‐area PCE of 12.0%. The feasibility of material and processing strategies in industrial large‐scale coating techniques is then shown by demonstrating a “dip‐coating” process which shows promise for large throughput production of perovskite solar modules.     

High‐Efficiency Large‐Area Carbon Nanotube‐Silicon Solar Cells

Currently studied carbon nanotube‐silicon (CNT‐Si) solar cells are based on relatively small active areas (typically <0.15 cm²); increasing the active area generally leads to reduced power conversion efficiencies. This study reports CNT‐Si solar cells with active areas of more than 2 cm² for single cells, yet still achieving cell efficiencies of about 10%, which is the first time for CNT‐Si solar cells with an active area more than 1 cm² to reach the level for real applications. In this work, a controlled number of flattened highly conductive CNT strips is added, in simple arrangement, to form a CNT‐Si solar cell with CNT strips in which the middle film makes heterojunctions with Si while the top strips act as self‐similar top electrodes, like conventional metal grids. The CNT strips, directly condensed from as‐grown CNT films, not only improve the CNT‐Si junctions, but also enhance the conductivity of top electrodes without introducing contact barrier when the CNT strips are added onto the film. This property may facilitate the development of large‐area high‐performance CNT or graphene‐Si solar cells.     

3D–2D–0D Interface Profiling for Record Efficiency All‐Inorganic CsPbBrI2 Perovskite Solar Cells with Superior Stability

All‐inorganic CsPbBrI₂ perovskite has great advantages in terms of ambient phase stability and suitable band gap (1.91 eV) for photovoltaic applications. However, the typically used structure causes reduced device performance, primarily due to the large recombination at the interface between the perovskite, and the hole‐extraction layer (HEL). In this paper, an efficient CsPbBrI₂ perovskite solar cell (PSC) with a dimensionally graded heterojunction is reported, in which the CsPbBrI₂ material is distributed within bulk–nanosheet–quantum dots or 3D–2D–0D dimension‐profiled interface structure so that the energy alignment is optimized in between the valence and conduction bands of both CsPbBrI₂ and the HEL layers. Specifically, the valence‐/conduction‐band edge is leveraged to bend with synergistic advantages: the graded combination enhances the hole extraction and conduction efficiency with effectively decreased recombination loss during the hole‐transfer process, leading to an enhanced built‐in electric field, hence a high V_OC of as much as 1.19 V. The profiled structure induces continuously upshifted energy levels, resulting in a higher J_SC of as much as 12.93 mA cm^?2 and fill factor as high as 80.5%, and therefore record power conversion efficiency (PCE) of 12.39%. As far as it is known, this is the highest PCE for CsPbBrI₂ perovskite‐based PSC.     

Elucidating the Role of a Tetrafluoroborate‐Based Ionic Liquid at the n‐Type Oxide/Perovskite Interface

Halide perovskites are currently one of the most heavily researched emerging photovoltaic materials. Despite achieving remarkable power conversion efficiencies, perovskite solar cells have not yet achieved their full potential, with the interfaces between the perovskite and the charge‐selective layers being where most recombination losses occur. In this study, a fluorinated ionic liquid (IL) is employed to modify the perovskite/SnO₂ interface. Using Kelvin probe and photoelectron spectroscopy measurements, it is shown that depositing the perovskite onto an IL‐treated substrate results in the crystallization of a perovskite film which has a more n‐type character, evidenced by a decrease of the work function and a shift of the Fermi level toward the conduction band. Photoluminescence spectroscopy and time‐resolved microwave conductivity are used to investigate the optoelectronic properties of the perovskite grown on neat and IL‐modified surfaces and it is found that the modified substrate yields a perovskite film which exhibits an order of magnitude lower trap density than the control. When incorporated into solar cells, this interface modification results in a reduction in the current–voltage hysteresis and an improvement in device performance, with the best performing devices achieving steady‐state PCEs exceeding 20%.     

Lithium Fluoride Based Electron Contacts for High Efficiency n‐Type Crystalline Silicon Solar Cells

Low‐resistance contact to lightly doped n‐type crystalline silicon (c‐Si) has long been recognized as technologically challenging due to the pervasive Fermi‐level pinning effect. This has hindered the development of certain devices such as n‐type c‐Si solar cells made with partial rear contacts (PRC) directly to the lowly doped c‐Si wafer. Here, a simple and robust process is demonstrated for achieving mΩ cm² scale contact resistivities on lightly doped n‐type c‐Si via a lithium fluoride/aluminum contact. The realization of this low‐resistance contact enables the fabrication of a first‐of‐its‐kind high‐efficiency n‐type PRC solar cell. The electron contact of this cell is made to less than 1% of the rear surface area, reducing the impact of contact recombination and optical losses, permitting a power conversion efficiency of greater than 20% in the initial proof‐of‐concept stage. The implementation of the LiF_x/Al contact mitigates the need for the costly high‐temperature phosphorus diffusion, typically implemented in such a cell design to nullify the issue of Fermi level pinning at the electron contact. The timing of this demonstration is significant, given the ongoing transition from p‐type to n‐type c‐Si solar cell architectures, together with the increased adoption of advanced PRC device structures within the c‐Si photovoltaic industry.