Efficient and Highly Air Stable Planar Inverted Perovskite Solar Cells with Reduced Graphene Oxide Doped PCBM Electron Transporting Layer

Reduced graphene oxide (rGO) is added in the [6,6]‐Phenyl‐C61‐butyric acid methyl ester (PCBM) electron transport layer (ETL) of planar inverted perovskite solar cells (PSCs), resulting in a power conversion efficiency (PCE) improvement of ≈12%, with a hysteresis‐free PCE of 14.5%, compared to 12.9% for the pristine PCBM based device. The universality of the method is demonstrated in PSCs based on CH₃NH₃PbI_3?x Cl_x and CH₃NH₃PbI₃ perovskites, deposited through one step and two step spin coating process, respectively. After a comprehensive spectroscopic characterization of both devices, it is clear that the introduction of rGO in PCBM ETL results in an important increase of the ETL conductivity, together with reduced series resistance and surface roughness. As a result, a significant photoluminescence quenching of such perovskite/ETL is observed, confirming the increased measured short circuit current density. Transient absorption measurements reveal that in the rGO‐based device, the relaxation process of the excited electrons is significantly faster compared to the reference, which implies that the charge injection rate is significantly faster for the first. Furthermore, the light soaking effect is significantly reduced. Finally, aging measurements reveal that the rGO stabilizes the ELT/perovskite interface, which results in the stabilization of perovskite crystal structure after prolonged illumination.     

Metal Oxides as Efficient Charge Transporters in Perovskite Solar Cells

Over the past few years, hybrid halide perovskites have emerged as a highly promising class of materials for photovoltaic technology, and the power conversion efficiency of perovskite solar cells (PSCs) has accelerated at an unprecedented pace, reaching a record value of over 22%. In the context of PSC research, wide‐bandgap semiconducting metal oxides have been extensively studied because of their exceptional performance for injection and extraction of photo‐generated carriers. In this comprehensive review, we focus on the synthesis and applications of metal oxides as electron and hole transporters in efficient PSCs with both mesoporous and planar architectures. Metal oxides and their doped variants with proper energy band alignment with halide perovskites, in the form of nanostructured layers and compact thin films, can not only assist with charge transport but also improve the stability of PSCs under ambient conditions. Strategies for the implementation of metal oxides with tailored compositions and structures, and for the engineering of their interfaces with perovskites will be critical for the future development and commercialization of PSCs.     

Graphene‐Based Electron Transport Layers in Perovskite Solar Cells: A Step‐Up for an Efficient Carrier Collection

The electron transport layer (ETL) plays a fundamental role in perovskite solar cells. Recently, graphene‐based ETLs have been proved to be good candidate for scalable fabrication processes and to achieve higher carrier injection with respect to most commonly used ETLs. Here, the effects of different graphene‐based ETLs in sensitized methylammonium lead iodide (MAPI) solar cells are experimentally studied. By means of time‐integrated and picosecond time‐resolved photoluminescence techniques, the carrier recombination dynamics in MAPI films embedded in different ETLs is investigated. Using graphene doped mesoporous TiO₂ (G+mTiO₂) with the addition of a lithium‐neutralized graphene oxide (GO‐Li) interlayer as ETL, it is found find that the carrier collection efficiency is increased by about a factor two with respect to standard mTiO₂. Taking advantage of the absorption coefficient dispersion, the MAPI layer morphology is probed, along the thickness, finding that the MAPI embedded in the ETL composed by G+mTiO₂ plus GO‐Li brings to a very good crystalline quality of the MAPI layer with a trap density about one order of magnitude lower than that found with the other ETLs. In addition, this ETL freezes MAPI at the tetragonal phase, regardless of the temperature. Graphene‐based ETLs can open the way to significant improvement of perovskite solar cells.     

Spatial Distribution Recast for Organic Bulk Heterojunctions for High‐Performance All‐Inorganic Perovskite/Organic Integrated Solar Cells

All‐inorganic CsPbIBr₂ perovskite solar cells (pero‐SCs) exhibit excellent overall stability, but their power conversion efficiencies (PCEs) are greatly limited by their wide bandgaps. Integrated solar cells (ISCs) are considered to be an emergent technology that could extend their photoresponse by directly stacking two distinct photoactive layers with complementary bandgaps. However, rising photocurrents always sacrifice other photovoltaic parameters, thereby leading to an unsatisfactory PCE. Here, a recast strategy is proposed to optimize the spatial distribution components of low‐bandgap organic bulk‐heterojunction (BHJ) film, and is combined with an all‐inorganic perovskite to construct perovskite/BHJ ISCs. With this strategy, the integrated perovskite/BHJ film with a top‐enriched donor‐material spatial distribution is shown to effectively improve ambipolar charge transport behavior and suppress charge carrier recombination. For the first time, the ISC is not only significantly extended and enhanced the photoresponse achieving a 20% increase in current density, but also exhibits a high open‐circuit voltage and fill factor at the same time. As a result, a record PCE of 11.08% based on CsPbIBr₂ pero‐SCs is realized; it simultaneously shows excellent long‐term stability against heat and ultraviolet light.     

Efficient Solution‐Processed Bulk Heterojunction Perovskite Hybrid Solar Cells

Efficient conventional bulk heterojunction (BHJ) perovskite hybrid solar cells (pero‐HSCs) solution‐processed from a composite of CH₃NH₃PbI₃ mixed with PC₆₁BM ([6,6]‐phenyl‐C61‐butyric acid methyl ester), where CH₃NH₃PbI₃ acts as the electron donor and PC₆₁BM acts as the electron acceptor, are reported for the first time. The efficiency of 12.78% is twofold enhancement in comparison with the conventional planar heterojunction pero‐HSCs (6.90%) fabricated by pristine CH₃NH₃PbI₃. The BHJ pero‐HSCs are further optimized by using PC₆₁BM/TiO₂ bi‐electron‐extraction‐layer (EEL), which are both solution‐processed and then followed with low‐temperature thermal annealing. Due to higher electrical conductivity of PC₆₁BM over that of TiO₂, an efficiency of 14.98%, the highest reported efficiency for the pero‐HSCs without incorporating high‐temperature‐processed mesoporous TiO₂ and Al₂O₃ as the EEL and insulating scaffold, is observed from PC₆₁BM modified BHJ pero‐HSCs. Thus, the findings provide a simple way to approach high efficiency low‐cost pero‐HSCs.     

High‐Efficiency CsPbI2Br Perovskite Solar Cells with Dopant‐Free Poly(3‐hexylthiophene) Hole Transporting Layers

CsPbI₂Br is emerging as a promising all‐inorganic material for perovskite solar cells (PSCs) due to its more stable lattice structure and moisture resistance compared to CsPbI₃, although its device performance is still much behind this counterpart. Herein, a preannealing process is developed and systematically investigated to achieve high‐quality CsPbI₂Br films by regulating the nucleation and crystallization of perovskite. The preannealing temperature and time are specifically optimized for a dopant‐free poly(3‐hexylthiophene) (P3HT)‐based device to target dopant‐induced drastic performance degradation for spiro‐OMeTAD‐based devices. The resulting P3HT‐based device exhibits comparable power conversion efficiency (PCE) to spiro‐OMeTAD‐based devices but much enhanced ambient stability with over 95% PCE after 1300 h. A diphenylamine derivative is introduced as a buffer layer to improve the energy‐level mismatch between CsPbI₂Br and P3HT. A record‐high PCE of 15.50% for dopant‐free P3HT‐based CsPbI₂Br PSCs is achieved by alleviating the open‐circuit voltage loss with the buffer layer. These results demonstrate that the preannealing processing together with a suitable buffer layer are applicable strategies for developing dopant‐free P3HT PSCs with high efficiency and stability.     

Switching Off Hysteresis in Perovskite Solar Cells by Fine‐Tuning Energy Levels of Extraction Layers

Lead halide perovskites often suffer from a strong hysteretic behavior on their j–V response in photovoltaic devices that has been correlated with slow ion migration. The electron extraction layer has frequently been pointed to as the main culprit for the observed hysteretic behavior. In this work three hole transport layers are studied with well‐defined highest occupied molecular orbital (HOMO) levels and interestingly the hysteretic behavior is markedly different. Here it is shown that an adequate energy level alignment between the HOMO level of the extraction layer and the valence band of the perovskite, not only suppresses the hysteresis, avoiding charge accumulation at the interfaces, but also degradation of the hole transport layer is reduced. Numerical simulation suggests that formation of an injection barrier at the organic/perovskite heterointerface could be one mechanism causing hysteresis. The suppression of such barriers may require novel design rules for interface materials. Overall, this work highlights that both external contacts need to be carefully optimized in order to obtain hysteresis‐free perovskite devices.     

Efficient Indium‐Doped TiOx Electron Transport Layers for High‐Performance Perovskite Solar Cells and Perovskite‐Silicon Tandems

In addition to a good perovskite light absorbing layer, the hole and electron transport layers play a crucial role in achieving high‐efficiency perovskite solar cells. Here, a simple, one‐step, solution‐based method is introduced for fabricating high quality indium‐doped titanium oxide electron transport layers. It is shown that indium‐doping improves both the conductivity of the transport layer and the band alignment at the ETL/perovskite interface compared to pure TiO₂, boosting the fill‐factor and voltage of perovskite cells. Using the optimized transport layers, a high steady‐state efficiency of 17.9% for CH₃NH₃PbI₃‐based cells and 19.3% for Cs_0.05(MA_0.17FA_0.83)_0.95Pb(I_0.83Br_0.17)₃‐based cells is demonstrated, corresponding to absolute efficiency gains of 4.4% and 1.2% respectively compared to TiO₂‐based control cells. In addition, a steady‐state efficiency of 16.6% for a semi‐transparent cell is reported and it is used to achieve a four‐terminal perovskite‐silicon tandem cell with a steady‐state efficiency of 24.5%.     

Interface‐Modification‐Induced Gradient Energy Band for Highly Efficient CsPbIBr2 Perovskite Solar Cells

Inorganic cesium lead halide perovskite solar cells (PSCs) have received enormous attention due to their excellent stability compared with that of their organic–inorganic counterparts. However, the lack of optimization strategies leads the inorganic PSCs to suffer from low efficiency arising from significant recombination. To overcome this dilemma, a surface modification of the electron transport layer (ETL)/perovskite interface is undertaken by using SmBr₃ to improve the crystallization and morphology of the perovskite layer for enhanced ETL/perovskite interface interaction. Encouragingly, a gradient energy band is created at the interface with an outstanding hole blocking effect. As a result, both the charge recombination occurring at the interface and the nonradiative recombination inside the perovskite are suppressed, and, simultaneously, the charge extraction is improved successfully. Therefore, the power conversion efficiency of the CsPbIBr₂ PSCs is increased to as high as 10.88% under one sun illumination, which is 30% higher than its counterparts without the modification. It is logically inferred that this valuable optimization strategy can be extended to other analogous structures and materials.     

Aligned and Graded Type‐II Ruddlesden–Popper Perovskite Films for Efficient Solar Cells

Recently, Ruddlesden–Popper perovskites (RPPs) have attracted increasing interests due to their promising stability. However, the efficiency of solar cells based on RPPs is much lower than that based on 3D perovskites, mainly attributed to their poor charge transport. Herein, a simple yet universal method for controlling the quality of RPP films by a synergistic effect of two additives in the precursor solution is presented. RPP films achieved by this method show (a) high quality with uniform morphology, enhanced crystallinity, and reduced density of sub‐bandgap states, (b) vertically oriented perovskite frameworks that facilitate efficient charge transport, and (c) type‐II band alignment that favors self‐driven charge separation. Consequently, a hysteresis‐free RPP solar cell with a power conversion efficiency exceeding 12%, which is much higher than that of the control device (1.5%), is achieved. The findings will spur new developments in the fabrication of high‐quality, aligned, and graded RPP films essential for realizing efficient and stable perovskite solar cells.     

Molecular Engineered Hole‐Extraction Materials to Enable Dopant‐Free,Efficient p‐i‐n Perovskite Solar Cells

Two hole‐extraction materials (HEMs), TPP‐OMeTAD and TPP‐SMeTAD, have been developed to facilitate the fabrication of efficient p‐i‐n perovskite solar cells (PVSCs). By replacing the oxygen atom on HEM with sulfur (from TPP‐OMeTAD to TPP‐SMeTAD), it effectively lowers the highest occupied molecular orbital of the molecule and provides stronger Pb? S interaction with perovskites, leading to efficient charge extraction and surface traps passivation. The TPP‐SMeTAD‐based PVSCs exhibit both improved photovoltaic performance and reduced hysteresis in p‐i‐n PVSCs over those based on TPP‐OMeTAD. This work not only provides new insights on creating perovskite‐HEM heterojunction but also helps in designing new HEM to enable efficient organic–inorganic hybrid PVSCs.     

The Rise of Textured Perovskite Morphology: Revolutionizing the Pathway toward High‐Performance Optoelectronic Devices

Halide perovskite materials have achieved overwhelming success in various optoelectronic applications, especially perovskite solar cells and perovskite‐based light‐emitting diodes (P‐LEDs), owing to their outstanding optical and electric properties. It is widely believed that flat and mirror‐like perovskite films are imperative for achieving high device performance, while the potential of other perovskite morphologies, such as the emerging textured perovskite, is overlooked, which leaves plenty of room for further breakthroughs. Compared to flat and mirror‐like perovskites, textured perovskites with unique structures, e.g., coral‐like, maze‐like, column‐like or quasi‐core@shell assemblies, are more efficient at light harvesting and charge extraction, thus revolutionizing the pathways toward ultrahigh performance in perovskite‐based optoelectronic devices. Employing a textured perovskite morphology, the record of external quantum efficiency for P‐LEDs is demonstrated as 21.6%. In this research news, recent progress in the utilization of textured perovskite is summarized, with the emphasis on the preparation strategies and prominent optoelectronic properties. The impact of the textured morphology on light harvesting, carrier dynamic management, and device performance is highlighted. Finally, the challenges and great potential of employing these innovative morphologies in fabricating more efficient optoelectronic devices, or creating a new energy harvesting and conversion regime are also provided.     

Understanding the Doping Effect on NiO: Toward High‐Performance Inverted Perovskite Solar Cells

High‐quality hole transport layers are prepared by spin‐coating copper doped nickel oxide (Cu:NiO) nanoparticle inks at room temperature without further processing. In agreement with theoretical calculations predicting that Cu doping results in acceptor energy levels closer to the valence band maximum compared to gap states of nickel vacancies in undoped NiO, an increase in the conductivity in Cu:NiO films compared to NiO is observed. Cu in Cu:NiO can be found in both Cu⁺ and Cu²⁺ states, and the substitution of Ni²⁺ with Cu⁺ contributes to both increased carrier concentration and carrier mobility. In addition, the films exhibit increased work function, which together with the conductivity increase, enables improved charge transfer and extraction. Furthermore, recombination losses due to lower monomolecular Shockley‐Read‐Hall recombination are reduced. These factors result in an improvement of all photovoltaic performance parameters and consequently an increased efficiency of the inverted planar perovskite solar cells. A power conversion efficiency (PCE) exceeding 20% could be achieved for small‐area devices, while PCE values of 17.41 and 18.07% are obtained for flexible devices and large area (1 cm²) devices on rigid substrates, respectively.     

Flash Infrared Annealing for Antisolvent‐Free Highly Efficient Perovskite Solar Cells

Organic–inorganic perovskites have demonstrated an impressive potential for the design of the next generation of solar cells. Perovskite solar cells (PSCs) are currently considered for scaling up and commercialization. Many of the lab‐scale preparation methods are however difficult to scale up or are environmentally unfriendly. The highest efficient PSCs are currently prepared using the antisolvent method, which utilizes a significant amount of an organic solvent to induce perovskite crystallization in a thin film. An antisolvent‐free method is developed in this work using flash infrared annealing (FIRA) to prepare methylammonium lead iodide (MAPbI₃) PSCs with a record stabilized power conversion efficiency of 18.3%. With an irradiation time of fewer than 2 s, FIRA enables the coating of glass and plastic substrates with pinhole‐free perovskite films that exhibit micrometer‐size crystalline domains. This work discusses the FIRA‐induced crystallization mechanism and unveils the main parameters controlling the film morphology. The replacement of the antisolvent method and the larger crystalline domains resulting from flash annealing make FIRA a highly promising method for the scale‐up of PSC manufacture.     

Self‐Assembled 2D Perovskite Layers for Efficient Printable Solar Cells

2D organic–inorganic hybrid Ruddlesden–Popper perovskites have emerged recently as candidates for the light‐absorbing layer in solar cell technology due largely to their impressive operational stability compared with their 3D‐perovskite counterparts. The methods reported to date for the preparation of efficient 2D perovksite layers for solar cells involve a nonscalable spin‐coating step. In this work, a facile, spin‐coating‐free, directly scalable drop‐cast method is reported for depositing precursor solutions that self‐assemble into highly oriented, uniform 2D‐perovskite films in air, yielding perovskite solar cells with power conversion efficiencies (PCE) of up to 14.9% (certified PCE of 14.33% ± 0.34 at 0.078 cm²). This is the highest PCE to date for a solar cell with 2D‐perovskite layers fabricated by nonspin‐coating method. The PCEs of the cells display no evidence of degradation after storage in a nitrogen glovebox for more than 5 months. 2D‐perovskite layer deposition using a slot‐die process is also investigated for the first time. Perovskite solar cells fabricated using batch slot‐die coating on a glass substrate or R2R slot‐die coating on a flexible substrate produced PCEs of 12.5% and 8.0%, respectively.     

Processing‐Performance Evolution of Perovskite Solar Cells: From Large Grain Polycrystalline Films to Single Crystals

Solution‐processable halide perovskites have emerged as strong contenders for next‐generation solar cells owing to their favorable optoelectronic properties. To maintain the efficiency momentum of perovskite solar cells (PSCs), development of advanced processing techniques, particularly for the perovskite layer, is imperative. There is a close correlation between the quality of the perovskite layer and its photophysical properties: Highly crystalline large grains with uniform morphology of the perovskite layer and their interface with charge transporters are crucial for achieving high performance. Significant efforts have been dedicated to achieve perovskite films with large grains reaching the millimeter‐scale for high‐efficiency PSCs. Recent work showcases a transition from large grain polycrystalline to single‐crystalline (SC) PSCs made possible by the facile growth of perovskite single crystals. In this review, the recent progress of the large grain polycrystalline PSCs and grain boundary‐free SC‐PSCs is reported, particularly focusing on the recent approach of depositing large‐grained perovskite layers and single crystal growth technique, that have been adopted for fabrication of efficient PSCs. In addition, prospects of SC‐PSCs and their further development in terms of efficiency, device design, scalability, and stability are discussed.