p‐Type CuI Islands on TiO2 Electron Transport Layer for a Highly Efficient Planar‐Perovskite Solar Cell with Negligible Hysteresis

Compact TiO₂ is widely used as an electron transport material in planar‐perovskite solar cells. However, TiO₂‐based planar‐perovskite solar cells exhibit low efficiencies due to intrinsic problems such as the unsuitable conduction band energy and low electron extraction ability of TiO₂. Herein, the planar TiO₂ electron transport layer (ETL) of perovskite solar cells is modified with ionic salt CuI via a simple one‐step spin‐coating process. The p‐type nature of the CuI islands on the TiO₂ surface leads to modification of the TiO₂ band alignment, resulting in barrier‐free contacts and increased open‐circuit voltage. It is found that the polarity of the CuI‐modified TiO₂ surface can pull electrons to the interface between the perovskite and the TiO₂, which improves electron extraction and reduces nonradiative recombination. The CuI solution concentration is varied to control the electron extraction of the modified TiO₂ ETL, and the optimized device shows a high efficiency of 19.0%. In addition, the optimized device shows negligible hysteresis, which is believed to be due to the removal of trap sites and effective electron extraction by CuI‐modified TiO₂. These results demonstrate the hitherto unknown effect of p‐type ionic salts on electron transport material.     

Simultaneous Contact and Grain‐Boundary Passivation in Planar Perovskite Solar Cells Using SnO2‐KCl Composite Electron Transport Layer

The performance of perovskite solar cells is sensitive to detrimental defects, which are prone to accumulate at the interfaces and grain boundaries of bulk perovskite films. Defect passivation at each region will lead to reduced trap density and thus less nonradiative recombination loss. However, it is challenging to passivate defects at both the grain boundaries and the bottom charge transport layer/perovskite interface, mainly due to the solvent incompatibility and complexity in perovskite formation. Here SnO₂‐KCl composite electron transport layer (ETL) is utilized in planar perovskite solar cells to simultaneously passivate the defects at the ETL/perovskite interface and the grain boundaries of perovskite film. The K and Cl ions at the ETL/perovskite interface passivate the ETL/perovskite contact. Meanwhile, K ions from the ETL can diffuse through the perovskite film and passivate the grain boundaries. An enhancement of open‐circuit voltage from 1.077 to 1.137 V and a corresponding power conversion efficiency increasing from 20.2% to 22.2% are achieved for the devices using SnO₂‐KCl composite ETL. The composite ETL strategy reported herein provides an avenue for defect passivation to further increase the efficiency of perovskite solar cells.     

Hole Transport Materials in Conventional Structural (n–i–p) Perovskite Solar Cells: From Past to the Future

With the application of organic–inorganic hybrid perovskites to liquid‐type solar cells, the unprecedented development of perovskite solar cells (Per‐SCs) has been boosted by the introduction of solid‐state hole transport materials (HTMs). The removal of liquid electrolyte has lead to improved efficiency and stability. Supported by high‐quality perovskite films, the certified efficiency of Per‐SCs has reached 25.2%. For Per‐SCs assembled in a conventional structure (n–i–p), the hole transport layer (HTL) plays an extra role in preventing the perovskite layer from external stimuli. In summary, the successful design and fabrication of the HTL must meet various requirements in terms of solubility, hole transport, recombination prevention, stability, and reproducibility, to name but a few. Many research strategies are focused on the development of high‐performance HTMs to meet such requirements. Such strategies for the development of HTMs employed in conventional n–i–p solar cells are reviewed herein. A vision of the future HTMs is proposed in this review based on the already proposed solutions and current trends.     

Effect of Photogenerated Dipoles in the Hole Transport Layer on Photovoltaic Performance of Organic–Inorganic Perovskite Solar Cells

Judicious choice of transport layer in organic–inorganic halide perovskite solar cells can be one of the essential parameters in photovoltaic design and fabrication techniques. This article reports the effect of optically generated dipoles in transport layer on the photovoltaic actions in active layer in perovskite solar cells with the architecture of indium tin oxide (ITO)/TiO _x /CH₃NH₃PbI_3–x Cl _x /hole transport layer (HTL)/Au. Here, PTB7‐thieno[3,4‐b]thiophene‐alt‐benzodithiophene and P3HT‐poly(3‐hexylthiophene) are separately used as the HTL with significant and negligible photoinduced dipoles, respectively. Electric field‐induced photoluminescence quenching provides the first‐hand evidence to indicate that the photoinduced dipoles are partially aligned in the amorphous PTB7 layer under the influence of device built‐in field. By monitoring the recombination process through magneto‐photocurrent measurements under device operation condition, it is shown that the photoinduced dipoles in PTB7 layer can decrease the recombination of photogenerated carriers in the active layer in perovskite solar cells. Furthermore, the capacitance measurements suggest that the photoinduced dipoles in PTB7 can decrease charge accumulation at the electrode interface. Therefore, the studies indicate the important role of photoinduced dipoles in the HTL on charge recombination dynamics and provide a fundamental insight on how the polarization in transport layer can influence the device performance in perovskite solar cells.     

Surface Engineering of TiO2 ETL for Highly Efficient and Hysteresis‐Less Planar Perovskite Solar Cell (21.4%) with Enhanced Open‐Circuit Voltage and Stability

Interfacial studies and band alignment engineering on the electron transport layer (ETL) play a key role for fabrication of high‐performance perovskite solar cells (PSCs). Here, an amorphous layer of SnO₂ (a‐SnO₂) between the TiO₂ ETL and the perovskite absorber is inserted and the charge transport properties of the device are studied. The double‐layer structure of TiO₂ compact layer (c‐TiO₂) and a‐SnO₂ ETL leads to modification of interface energetics, resulting in improved charge collection and decreased carrier recombination in PSCs. The optimized device based on a‐SnO₂/c‐TiO₂ ETL shows a maximum power conversion efficiency (PCE) of 21.4% as compared to 19.33% for c‐TiO₂ based device. Moreover, the modified device demonstrates a maximum open‐circuit voltage (V_oc) of 1.223 V with 387 mV loss in potential, which is among the highest reported value for PSCs with negligible hysteresis. The stability results show that the device on c‐TiO₂/a‐SnO₂ retains about 91% of its initial PCE value after 500 h light illumination, which is higher than pure c‐TiO₂ (67%) based devices. Interestingly, using a‐SnO₂/c‐TiO₂ ETL the PCE loss was only 10% of initial value under continuous UV light illumination after 30 h, which is higher than that of c‐TiO₂ based device (28% PCE loss).     

Understanding the Role of Cesium and Rubidium Additives in Perovskite Solar Cells: Trap States,Charge Transport,and Recombination

Adding cesium (Cs) and rubidium (Rb) cations to FA_0.83MA_0.17Pb(I_0.83Br_0.17)₃ hybrid lead halide perovskites results in a remarkable improvement in solar cell performance, but the origin of the enhancement has not been fully understood yet. In this work, time‐of‐flight, time‐resolved microwave conductivity, and thermally stimulated current measurements are performed to elucidate the impact of the inorganic cation additives on the trap landscape and charge transport properties within perovskite solar cells. These complementary techniques allow for the assessment of both local features within the perovskite crystals and macroscopic properties of films and full devices. Strikingly, Cs‐incorporation is shown to reduce the trap density and charge recombination rates in the perovskite layer. This is consistent with the significant improvements in the open‐circuit voltage and fill factor of Cs‐containing devices. By comparison, Rb‐addition results in an increased charge carrier mobility, which is accompanied by a minor increase in device efficiency and reduced current–voltage hysteresis. By mixing Cs and Rb in quadruple cation (Cs‐Rb‐FA‐MA) perovskites, the advantages of both inorganic cations can be combined. This study provides valuable insights into the role of these additives in multiple‐cation perovskite solar cells, which are essential for the design of high‐performance devices.     

Controllable Perovskite Crystallization via Antisolvent Technique Using Chloride Additives for Highly Efficient Planar Perovskite Solar Cells

The presence of surface and grain boundary defects in organic–inorganic halide perovskite films can be detrimental to both the performance and operational stability of perovskite solar cells (PSCs). Here, the effect of chloride additives is studied on the bulk and surface defects of the mixed cation and halide PSCs. It is found that using an antisolvent technique, the perovskite film is divided into two layers, i.e., a bottom layer with large grains and a thin capping layer with small grains. The addition of formamidinium chloride (FACl) into the precursor solution removes the small‐grained perovskite capping layer and suppresses the formation of bulk and surface defects, providing a perovskite film with enhanced crystallinity and large grain size of over 1 µm. Time‐resolved photoluminescence measurements show longer lifetimes for perovskite films modified by FACl and subsequently passivated by 1‐adamantylamine hydrochloride as compared to the reference sample. Impedance spectroscopy measurements show that these treatments reduce the recombination in the PSCs, leading to a champion device with power conversion efficiency (PCE) of 21.2%, an open circuit voltage of 1152 mV and negligible hysteresis. The Cl treated PSC also shows improved operational stability with only 12% PCE loss after 700 h under continuous illumination.     

Perovskite Tandem Solar Cells

The meteoric rise of perovskite single‐junction solar cells has been accompanied by similar stunning developments in perovskite tandem solar cells. Debuting with efficiencies less than 14% in 2014, silicon–perovskite solar cells are now above 25% and will soon surpass record silicon single‐junction efficiencies. Unconstrained by the Shockley–Quiesser single‐junction limit, perovskite tandems suggest a real possibility of true third‐generation thin‐film photovoltaics; monolithic all‐perovskite tandems have reached 18% efficiency and will likely pass perovskite single‐junction efficiencies within the next 5 years. Inorganic–organic metal–halide perovskites are ideal candidates for inclusion in tandem solar cells due to their high radiative recombination efficiencies, excellent absorption, long‐range charge‐transport, and broad ability to tune the bandgap. In this progress report, the development of perovskite tandem cells is reviewed, with presentation of their key motivations and challenges. In detail, it presents an overview of recombination layer materials, bandgap‐tuneability, transparent contact architectures, and perovskite compounds for use in tandems. Theoretical estimates of efficiency for future tandem and triple‐junction perovskite cells are presented, outlining roadmaps for future focused research.     

Simultaneous Improvement of Photovoltaic Performance and Stability by In Situ Formation of 2D Perovskite at (FAPbI3)0.88(CsPbBr3)0.12/CuSCN Interface

To solve the stability issues of perovskite solar cells (PSC), here a novel interface engineering strategy that a versatile ultrathin 2D perovskite (5‐AVA)₂PbI₄ (5‐AVA = 5‐ammoniumvaleric acid) passivation layer that is in situ incorporated at the interface between (FAPbI₃)_0.88(CsPbBr₃)_0.12 and the hole transporting CuSCN is reported. Surface analysis using X‐ray photoelectron spectroscopy confirms the formation of 2D perovskite. Hysteresis is reduced by the interfacial 2D layer, which could be ascribed to improvement of interfacial charge extraction efficiency, associated with suppression of recombination. Moreover, introduction of the interface passivating layer enhances the moisture stability and photostability as compared to the control perovskite film due to hydrophobic nature of 2D perovskite. The unencapsulated device retains 98% of the initial power conversion efficiency (PCE) after 63 d under moisture exposure of about 10% in the dark. A PCE of the control device is boosted from 13.72 to 16.75% as a consequence of enhanced open‐circuit voltage (V_oc) and fill factor along with slightly increased short‐circuit current density (J_sc), which results from reduced trap states of (FAPbI₃)_0.88(CsPbBr₃)_0.12 as evidenced by enhanced carrier lifetimes and charge extraction. The perovskite/hole transport material interface engineering gives insight into simultaneous improvements of PCE and device stability.     

Enhancing the Open‐Circuit Voltage of Perovskite Solar Cells by up to 120 mV Using π‐Extended Phosphoniumfluorene Electrolytes as Hole Blocking Layers

Four π‐extended phosphoniumfluorene electrolytes (π‐PFEs) are introduced as hole‐blocking layers (HBL) in inverted architecture planar perovskite solar cells with the structure of ITO/PEDOT:PSS/MAPbI₃/PCBM/HBL/Ag. The deep‐lying highest occupied molecular orbital energy level of the π‐PFEs effectively blocks holes, decreasing contact recombination. It is demonstrated that the incorporation of π‐PFEs introduces a dipole moment at the PCBM/Ag interface, resulting in significant enhancement of the built‐in potential of the device. This enhancement results in an increase in the open‐circuit voltage of the device by up to 120 mV, when compared to the commonly used bathocuproine HBL. The results are confirmed both experimentally and by numerical simulation. This work demonstrates that interfacial engineering of the transport layer/contact interface by small molecule electrolytes is a promising route to suppress nonradiative recombination in perovskite devices and compensates for a nonideal energetic alignment at the hole‐transport layer/perovskite interface.     

Alkali Chlorides for the Suppression of the Interfacial Recombination in Inverted Planar Perovskite Solar Cells

In this work, significant suppression of the interfacial recombination by facile alkali chloride interface modification of the NiOx hole transport layer in inverted planar perovskite solar cells is achieved. Experimental and theoretical results reveal that the alkali chloride interface modification results in improved ordering of the perovskite films, which in turn reduces defect/trap density, causing reduced interfacial recombination. This leads to a significant improvement in the open‐circuit voltage from 1.07 eV for pristine NiOx to 1.15 eV for KCl‐treated NiOx, resulting in a power conversion efficiency approaching 21%. Furthermore, the suppression of the ion diffusion in the devices is observed, as evidenced by stable photoluminescence (PL) under illumination and high PL quantum efficiency with alkali chloride treatment, as opposed to the luminescence enhancement and low PL quantum efficiency observed for perovskite on pristine NiOx. The suppressed ion diffusion is also consistent with improved stability of the devices with KCl‐treated NiOx. Thus, it is demonstrated that a simple interfacial modification is an effective method to not only suppress interfacial recombination but also to suppress ion migration in the layers deposited on the modified interface due to improved interface ordering and reduced defect density.     

Diffraction‐Grated Perovskite Induced Highly Efficient Solar Cells through Nanophotonic Light Trapping

Achieving light harvesting is crucial for the efficiency of the solar cell. Constructing optical structures often can benefit from micro‐nanophotonic imprinting. Here, a simple and facile strategy is developed to introduce a large area grating structure into the perovskite‐active layer of a solar cell by utilizing commercial optical discs (CD‐R and DVD‐R) and achieve high photovoltaic performance. The constructed diffraction grating on the perovskite active layer realizes nanophotonic light trapping by diffraction and effectively suppresses carrier recombination. Compared to the pristine perovskite solar cells (PSCs), the diffraction‐grating perovskite devices with DVD obtain higher power conversion efficiency and photocurrent density, which are improved from 16.71% and 21.67 mA cm^?2 to 19.71% and 23.11 mA cm^?2. Moreover, the stability of the PSCs with diffraction‐grating‐structured perovskite active layer is greatly enhanced. The method can boost photonics merge into the remarkable perovskite materials for various applications.     

Light Absorption and Recycling in Hybrid Metal Halide Perovskite Photovoltaic Devices

The production of highly efficient single‐ and multijunction metal halide perovskite (MHP) solar cells requires careful optimization of the optical and electrical properties of these devices. Here, precise control of CH₃NH₃PbI₃ perovskite layers is demonstrated in solar cell devices through the use of dual source coevaporation. Light absorption and device performance are tracked for incorporated MHP films ranging from ≈67 nm to ≈1.4 µm thickness and transfer‐matrix optical modeling is utilized to quantify optical losses that arise from interference effects. Based on these results, a device with 19.2% steady‐state power conversion efficiency is achieved through incorporation of a perovskite film with near‐optimum predicted thickness (≈709 nm). Significantly, a clear signature of photon reabsorption is observed in perovskite films that have the same thickness (≈709 nm) as in the optimized device. Despite the positive effect of photon recycling associated with photon reabsorption, devices with thicker (>750 nm) MHP layers exhibit poor performance owing to competing nonradiative charge recombination in a “dead‐volume” of MHP. Overall, these findings demonstrate the need for fine control over MHP thickness to achieve the highest efficiency cells, and accurate consideration of photon reabsorption, optical interference, and charge transport properties.     

Interfaces in Perovskite Solar Cells

Rapid improvement in photoconversion efficiency (PCE) of solution processable organometallic hybrid halide based perovskite solar cells (PSCs) have taken the photovoltaic (PV) community with a surprise and has extended their application in other electronic devices such as light emitting diodes, photo detectors and batteries. Together with efforts to push the PCE of PSCs to record values >22% – now at par with that of crystalline silicon solar cells – origin of their PV action and underlying physical processes are also deeply investigated worldwide in diverse device configurations. A typical PSC consists of a perovskite film sandwiched between an electron and a hole selective contact thereby creating ESC/perovskite and perovskite/HSC interfaces, respectively. The selective contacts and their interfaces determine properties of perovskite layer and also control the performance, origin of PV action, open circuit voltage, device stability, and hysteresis in PSCs. Herein, we define ideal charge selective contacts, and provide an overview on how the choice of interfacing materials impacts charge accumulation, transport, transfer/recombination, band‐alignment, and electrical stability in PSCs. We then discuss device related considerations such as morphology of the selective contacts (planar or mesoporous), energetics and electrical properties (insulating and conducting), and its chemical properties (organic vs inorganic). Finally, the outlook highlights key challenges and future directions for a commercially viable perovskite based PV technology.     

Exploring Inorganic Binary Alkaline Halide to Passivate Defects in Low‐Temperature‐Processed Planar‐Structure Hybrid Perovskite Solar Cells

Planar perovskite solar cells obtained by low‐temperature solution processing are of great promise, given a high compatibility with flexible substrates and perovskite‐based tandem devices, whilst benefitting from relatively simple manufacturing methods. However, ionic defects at surfaces usually cause detrimental carrier recombination, which links to one of dominant losses in device performance, slow transient responses, and notorious hysteresis. Here, it is shown that several different types of ionic defects can be simultaneously passivated by simple inorganic binary alkaline halide salts with their cations and anions. Compared to previous literature reports, this work demonstrates a promising passivation technology for perovskite solar cells. The efficient defect passivation significantly suppresses the recombination at the SnO₂/perovskite interface, contributing to an increase in the open‐circuit voltage, the fast response of steady‐state efficiency, and the elimination of hysteresis. By this strong leveraging of multiple‐element passivation, low‐temperature‐processed, planar‐structured perovskite solar cells of 20.5% efficiencies, having negligible hysteresis, are obtained. Moreover, this defect‐passivation enhances the stability of solar cells with efficiency beyond 20%, retaining 90% of their initial performance after 30 d. This approach aims at developing the concept of defect engineering, which can be expanded to multiple‐element passivation from monoelement counterparts using simple and low‐cost inorganic materials.     

Improving Perovskite Solar Cells: Insights From a Validated Device Model

To improve the efficiency of existing perovskite solar cells (PSCs), a detailed understanding of the underlying device physics during their operation is essential. Here, a device model has been developed and validated that describes the operation of PSCs and quantitatively explains the role of contacts, the electron and hole transport layers, charge generation, drift and diffusion of charge carriers and recombination. The simulation to the experimental data of vacuum‐deposited CH₃NH₃PbI₃ solar cells over multiple thicknesses has been fit and the device behavior under different operating conditions has been studied to delineate the influence of the external bias, charge‐carrier mobilities, energetic barriers for charge injection/extraction and, different recombination channels on the solar cell performance. By doing so, a unique set of material parameters and physical processes that describe these solar cells is identified. Trap‐assisted recombination at material interfaces is the dominant recombination channel limiting device performance and passivation of traps increases the power conversion efficiency (PCE) of these devices by 40%. Finally, guidelines to increase their performance have been issued and it is shown that a PCE beyond 25% is within reach.     

Spontaneous Interface Ion Exchange: Passivating Surface Defects of Perovskite Solar Cells with Enhanced Photovoltage

Interface engineering is of great concern in photovoltaic devices. For the solution‐processed perovskite solar cells, the modification of the bottom surface of the perovskite layer is a challenge due to solvent incompatibility. Herein, a Cl‐containing tin‐based electron transport layer; SnO_x‐Cl, is designed to realize an in situ, spontaneous ion‐exchange reaction at the interface of SnO_x‐Cl/MAPbI₃. The interfacial ion rearrangement not only effectively passivates the physical contact defects, but, at the same time, the diffusion of Cl ions in the perovskite film also causes longitudinal grain growth and further reduces the grain boundary density. As a result, an efficiency of 20.32% is achieved with an extremely high open‐circuit voltage of 1.19 V. This versatile design of the underlying carrier transport layer provides a new way to improve the performance of perovskite solar cells and other optoelectronic devices.     

Reducing Saturation‐Current Density to Realize High‐Efficiency Low‐Bandgap Mixed Tin–Lead Halide Perovskite Solar Cells

The unsatisfactory performance of low‐bandgap mixed tin (Sn)–lead (Pb) halide perovskite subcells has been one of the major obstacles hindering the progress of the power conversion efficiencies (PCEs) of all‐perovskite tandem solar cells. By analyzing dark‐current density and distribution, it is identified that charge recombination at grain boundaries is a key factor limiting the performance of low‐bandgap mixed Sn–Pb halide perovskite subcells. It is further found that bromine (Br) incorporation can effectively passivate grain boundaries and lower the dark current density by two–three orders of magnitude. By optimizing the Br concentration, low‐bandgap (1.272 eV) mixed Sn–Pb halide perovskite solar cells are fabricated with open‐circuit voltage deficits as low as 0.384 V and fill factors as high as 75%. The best‐performing device demonstrates a PCE of >19%. The results suggest an important direction for improving the performance of low‐bandgap mixed Sn–Pb halide perovskite solar cells.     

Solvent‐Mediated Dimension Tuning of Semiconducting Oxide Nanostructures as Efficient Charge Extraction Thin Films for Perovskite Solar Cells with Efficiency Exceeding 16%

The recent surge in efficiency and progress of organohalide perovskite solar cells (PSCs) has been significant. The PSC performance is significantly influenced by nanostructuring as this varies the intrinsic optical, electrical, and electrochemical properties. Diverse TiO₂ electron transport layers (ETLs) are solvothermally grown on the transparent conducting oxide substrate with different dimensionalities, 0D nanoparticles (TNP), 1D nanowires (TNW) to 2D nanosheets (TNS), by varying the organic solvent used. These layers feature enhanced optical transparency (≈2%–5% transmittance improvement compared to pristine fluorine doped tin oxide, FTO, glass) minimizing light absorption losses. PSCs constructed using 1D TNW or 2D TNS yield enhanced photovoltaic performance compared to the 0D TNP counterparts. This is a result of i) improved infiltration of the perovskite in the porous TNW or TNS network and ii) facilitated electron transport and charge extraction at the TNW/perovskite or TNS/perovskite interfaces, thus reduced interfacial recombination loss. Employing a bilayered ETL film consisting of a self‐assembled TiO₂ blocking layer and a subsequent TNW active layer, produces PSC devices with an efficiency exceeding 16%. This bilayered ETL film can simultaneously block the photogenerated holes and enhance electron ­extraction, therefore improving PSC performance.     

Efficient Perovskite Solar Cells by Reducing Interface‐Mediated Recombination: a Bulky Amine Approach

The presence of non‐radiative recombination at the perovskite surface/interface limits the overall efficiency of perovskite solar cells (PSCs). Surface passivation has been demonstrated as an efficient strategy to suppress such recombination in Si cells. Here, 1‐naphthylmethylamine iodide (NMAI) is judiciously selected to passivate the surface of the perovskite film. In contrast to the popular phenylethylammonium iodide, NMAI post‐treatment primarily leaves NMAI salt on the surface of the perovskite film. The formed NMAI layer not only efficiently decreases the defect‐assisted recombination for chemical passivation, but also retards the charge accumulation of energy level mis‐alignment for vacuum level bending and prevents minority carrier recombination due to the charge‐blocking effect. Consequently, planar PSCs with high efficiency of 21.04% and improved long‐term stability (98.9% of the initial efficiency after 3240 h) are obtained. Moreover, open‐circuit voltage as high as 1.20 V is achieved at the absorption threshold of 1.61 eV, which is among the highest reported values in planar PSCs. This work provides new insights into the passivation mechanisms of organic ammonium salts and suggests future guidelines for developing improved passivation layers.