Influence of SiO<Subscript>2</Subscript> Spacer Layer Thickness on Performance of Plasmonic Textured Silicon Solar Cell

We investigated the effect of SiO₂ spacer layer thickness between the textured silicon surface and silver nanoparticles (Ag NPs) on solar cell performance using quantum efficiency analysis. Separation of Ag NPs from high index silicon with SiO₂ layer led to modified absorption and scattering cross-sections due to graded refractive index medium. The forward scattering from Ag NPs is very sensitive to SiO₂ layer thickness in plasmonic silicon cell performance due to the evanescent character of generated near-fields around the NPs. With the optimized ～30–40 nm SiO₂ spacer layer, we observed an enhancement of solar cell efficiency from ～8.7 to ～10 %, which is due to the photocurrent enhancement in the off-resonance surface plasmon region. We also estimated minority carrier diffusion lengths (L _eff) from internal quantum efficiency data, which are also sensitive to SiO₂ spacer layer thickness. We observed that the L _eff values are enhanced from ～356 to ～420 μm after placing Ag NPs on ～40 nm spacer layer due to improved forward (angular) scattering of light from the Ag NPs into silicon.     

Lithium Fluoride Based Electron Contacts for High Efficiency n‐Type Crystalline Silicon Solar Cells

Low‐resistance contact to lightly doped n‐type crystalline silicon (c‐Si) has long been recognized as technologically challenging due to the pervasive Fermi‐level pinning effect. This has hindered the development of certain devices such as n‐type c‐Si solar cells made with partial rear contacts (PRC) directly to the lowly doped c‐Si wafer. Here, a simple and robust process is demonstrated for achieving mΩ cm² scale contact resistivities on lightly doped n‐type c‐Si via a lithium fluoride/aluminum contact. The realization of this low‐resistance contact enables the fabrication of a first‐of‐its‐kind high‐efficiency n‐type PRC solar cell. The electron contact of this cell is made to less than 1% of the rear surface area, reducing the impact of contact recombination and optical losses, permitting a power conversion efficiency of greater than 20% in the initial proof‐of‐concept stage. The implementation of the LiF_x/Al contact mitigates the need for the costly high‐temperature phosphorus diffusion, typically implemented in such a cell design to nullify the issue of Fermi level pinning at the electron contact. The timing of this demonstration is significant, given the ongoing transition from p‐type to n‐type c‐Si solar cell architectures, together with the increased adoption of advanced PRC device structures within the c‐Si photovoltaic industry.     

A Low Resistance Calcium/Reduced Titania Passivated Contact for High Efficiency Crystalline Silicon Solar Cells

Recent advances in the efficiency of crystalline silicon (c‐Si) solar cells have come through the implementation of passivated contacts that simultaneously reduce recombination and resistive losses within the contact structure. In this contribution, low resistivity passivated contacts are demonstrated based on reduced titania (TiO_x) contacted with the low work function metal, calcium (Ca). By using Ca as the overlying metal in the contact structure we are able to achieve a reduction in the contact resistivity of TiO_x passivated contacts of up to two orders of magnitude compared to previously reported data on Al/TiO_x contacts, allowing for the application of the Ca/TiO_x contact to n‐type c‐Si solar cells with partial rear contacts. Implementing this contact structure on the cell level results in a power conversion efficiency of 21.8% where the Ca/TiO_x contact comprises only ≈6% of the rear surface of the solar cell, an increase of 1.5% absolute compared to a similar device fabricated without the TiO_x interlayer.     

Dopant‐Free Partial Rear Contacts Enabling 23% Silicon Solar Cells

Over the past five years, there has been a significant increase in both the intensity of research and the performance of crystalline silicon devices which utilize metal compounds to form carrier‐selective heterocontacts. Such heterocontacts are less fundamentally limited and have the potential for lower costs compared to the current industry dominating heavily doped, directly metalized contacts. A low temperature (≤230 °C), TiO_x/LiF_x/Al electron heterocontact is presented here, which achieves mΩcm² scale contact resistivities ρ_c on lowly doped n‐type substrates. As an extreme demonstration of the potential of this heterocontact, it is trialed in a newly developed, high efficiency n‐type solar cell architecture as a partial rear contact (PRC). Despite only contacting ≈1% of the rear surface area, an efficiency of greater than 23% is achieved, setting a new benchmark for n‐type solar cells featuring undoped PRCs and confirming the unusually low ρ_c of the TiO_x/LiF_x/Al contact. Finally, in contrast to previous versions of the n‐type undoped PRC cell, the performance of this cell is maintained after annealing at 350–400 °C, suggesting its compatibility with conventional surface passivation activation and sintering steps.     

Polycrystalline Silicon Thin-film Solar cells with Plasmonic-enhanced Light-trapping

One of major approaches to cheaper solar cells is reducing the amount of semiconductor material used for their fabrication and making cells thinner. To compensate for lower light absorption such physically thin devices have to incorporate light-trapping which increases their optical thickness. Light scattering by textured surfaces is a common technique but it cannot be universally applied to all solar cell technologies. Some cells, for example those made of evaporated silicon, are planar as produced and they require an alternative light-trapping means suitable for planar devices. Metal nanoparticles formed on planar silicon cell surface and capable of light scattering due to surface plasmon resonance is an effective approach.The paper presents a fabrication procedure of evaporated polycrystalline silicon solar cells with plasmonic light-trapping and demonstrates how the cell quantum efficiency improves due to presence of metal nanoparticles.To fabricate the cells a film consisting of alternative boron and phosphorous doped silicon layers is deposited on glass substrate by electron beam evaporation. An Initially amorphous film is crystallised and electronic defects are mitigated by annealing and hydrogen passivation. Metal grid contacts are applied to the layers of opposite polarity to extract electricity generated by the cell. Typically, such a ~2 μm thick cell has a short-circuit current density (Jsc) of 14-16 mA/cm², which can be increased up to 17-18 mA/cm² (~25% higher) after application of a simple diffuse back reflector made of a white paint.To implement plasmonic light-trapping a silver nanoparticle array is formed on the metallised cell silicon surface. A precursor silver film is deposited on the cell by thermal evaporation and annealed at 23°C to form silver nanoparticles. Nanoparticle size and coverage, which affect plasmonic light-scattering, can be tuned for enhanced cell performance by varying the precursor film thickness and its annealing conditions. An optimised nanoparticle array alone results in cell Jsc enhancement of about 28%, similar to the effect of the diffuse reflector. The photocurrent can be further increased by coating the nanoparticles by a low refractive index dielectric, like MgF₂, and applying the diffused reflector. The complete plasmonic cell structure comprises the polycrystalline silicon film, a silver nanoparticle array, a layer of MgF₂, and a diffuse reflector. The Jsc for such cell is 21-23 mA/cm², up to 45% higher than Jsc of the original cell without light-trapping or ~25% higher than Jsc for the cell with the diffuse reflector only.

Introduction

Light-trapping in silicon solar cells is commonly achieved via light scattering at textured interfaces. Scattered light travels through a cell at oblique angles for a longer distance and when such angles exceed the critical angle at the cell interfaces the light is permanently trapped in the cell by total internal reflection (Animation 1: Light-trapping). Although this scheme works well for most solar cells, there are developing technologies where ultra-thin Si layers are produced planar (e.g. layer-transfer technologies and epitaxial c-Si layers) ¹ and or when such layers are not compatible with textures substrates (e.g. evaporated silicon) ². For such originally planar Si layer alternative light trapping approaches, such as diffuse white paint reflector ³, silicon plasma texturing ⁴ or high refractive index nanoparticle reflector ⁵ have been suggested.Metal nanoparticles can effectively scatter incident light into a higher refractive index material, like silicon, due to the surface plasmon resonance effect ⁶. They also can be easily formed on the planar silicon cell surface thus offering a light-trapping approach alternative to texturing. For a nanoparticle located at the air-silicon interface the scattered light fraction coupled into silicon exceeds 95% and a large faction of that light is scattered at angles above critical providing nearly ideal light-trapping condition (Animation 2: Plasmons on NP). The resonance can be tuned to the wavelength region, which is most important for a particular cell material and design, by varying the nanoparticle average size, surface coverage and local dielectric environment ^6,7. Theoretical design principles of plasmonic nanoparticle solar cells have been suggested ⁸. In practice, Ag nanoparticle array is an ideal light-trapping partner for poly-Si thin-film solar cells because most of these design principle are naturally met. The simplest way of forming nanoparticles by thermal annealing of a thin precursor Ag film results in a random array with a relatively wide size and shape distribution, which is particularly suitable for light-trapping because such an array has a wide resonance peak, covering the wavelength range of 700-900 nm, important for poly-Si solar cell performance. The nanoparticle array can only be located on the rear poly-Si cell surface thus avoiding destructive interference between incident and scattered light which occurs for front-located nanoparticles ⁹. Moreover, poly-Si thin-film cells do not requires a passivating layer and the flat base-shaped nanoparticles (that naturally result from thermal annealing of a metal film) can be directly placed on silicon further increases plasmonic scattering efficiency due to surface plasmon-polariton resonance ¹⁰.The cell with the plasmonic nanoparticle array as described above can have a photocurrent about 28% higher than the original cell. However, the array still transmits a significant amount of light which escapes through the rear of the cell and does not contribute into the current. This loss can be mitigated by adding a rear reflector to allow catching transmitted light and re-directing it back to the cell. Providing sufficient distance between the reflector and the nanoparticles (a few hundred nanometers) the reflected light will then experience one more plasmonic scattering event while passing through the nanoparticle array on re-entering the cell and the reflector itself can be made diffuse - both effects further facilitating light scattering and hence light-trapping. Importantly, the Ag nanoparticles have to be encapsulated with an inert and low refractive index dielectric, like MgF₂ or SiO₂, from the rear reflector to avoid mechanical and chemical damage ⁷. Low refractive index for this cladding layer is required to maintain a high coupling fraction into silicon and larger scattering angles, which are ensured by the high optical contrast between the media on both sides of the nanoparticle, silicon and dielectric ⁶. The photocurrent of the plasmonic cell with the diffuse rear reflector can be up to 45% higher than the current of the original cell or up to 25% higher than the current of an equivalent cell with the diffuse reflector only.     

Optimization of Dielectric-Coated Silver Nanoparticle Films for Plasmonic-Enhanced Light Trapping in Thin Film Silicon Solar Cells

Surface plasmonic-enhanced light trapping from metal nanoparticles is a promising way of increasing the light absorption in the active silicon layer and, therefore, the photocurrent of the silicon solar cells. In this paper, we applied silver nanoparticles on the rear side of polycrystalline silicon thin film solar cell and systematically studied the dielectric environment effect on the absorption and short-circuit current density (Jsc) of the device. Three different dielectric layers, magnesium fluoride (MgF₂, n?=?1.4), tantalum pentoxide (Ta₂O₅, n?=?2.2), and titanium dioxide (TiO₂, n?=?2.6), were investigated. Experimentally, we found that higher refractive index dielectric coatings results in a redshift of the main plasmonic extinction peak and higher modes were excited within the spectral region that is of interest in our thin film solar cell application. The optical characterization shows that nanoparticles coated with highest refractive index dielectric TiO₂ provides highest absorption enhancement 75.6 %; however, from the external quantum efficiency characterization, highest short-circuit current density Jsc enhancement of 45.8 % was achieved by coating the nanoparticles with lower refractive index MgF₂. We also further optimize the thickness of MgF₂ and a final 50.2 % Jsc enhancement was achieved with a 210-nm MgF₂ coating and a back reflector.     

Conductive and Stable Magnesium Oxide Electron‐Selective Contacts for Efficient Silicon Solar Cells

A high Schottky barrier (>0.65 eV) for electrons is typically found on lightly doped n‐type crystalline (c‐Si) wafers for a variety of contact metals. This behavior is commonly attributed to the Fermi‐level pinning effect and has hindered the development of n‐type c‐Si solar cells, while its p‐type counterparts have been commercialized for several decades, typically utilizing aluminium alloys in full‐area, and more recently, partial‐area rear contact configurations. Here the authors demonstrate a highly conductive and thermally stable electrode composed of a magnesium oxide/aluminium (MgO_x/Al) contact, achieving moderately low resistivity Ohmic contacts on lightly doped n‐type c‐Si. The electrode, functionalized with nanoscale MgO_x films, significantly enhances the performance of n‐type c‐Si solar cells to a power conversion efficiency of 20%, advancing n‐type c‐Si solar cells with full‐area dopant‐free rear contacts to a point of competitiveness with the standard p‐type architecture. The low thermal budget of the cathode formation, its dopant‐free nature, and the simplicity of the device structure enabled by the MgO_x/Al contact open up new possibilities in designing and fabricating low‐cost optoelectronic devices, including solar cells, thin film transistors, or light emitting diodes.     

Rear Surface Passivation for Ink-Based,Submicron CuIn(S,Se)2 Solar Cells

A N, N-dimethylformamide and thiourea-based route is developed to fabricate submicron (0.55 and 0.75 µm) thick CuIn(S,Se)₂ (CISSe) thin films for photovoltaic applications, addressing challenges of material usage, throughput, and manufacturing costs. However, reducing the absorber film thickness below 1 µm in a regular CISSe solar cell decreases the device efficiency due to losses at the highly-recombinative, and mediocre-reflective Mo/CISSe rear interface. For the first time, to mitigate the rear recombination losses, a novel rear contacting structure involving a surface passivation layer and point contact openings is developed for solution processed CISSe films and demonstrated in tangible devices. An atomic layer deposited Al₂O₃ film is employed to passivate the Mo/CISSe rear surface while precipitates formed via chemical bath deposition of CdS are used to generate nanosized point openings. Consequently, Al₂O₃ passivated CISSe solar cells show an increase in the open-circuit voltage (V_OC) and short-circuit current density when compared to reference cells with equivalent absorber thicknesses. Notably, a V_OC increase of 59 mV contributes to active area efficiencies of 14.2% for rear passivated devices with 0.75 µm thick absorber layers, the highest reported value for submicron-based solution processed, low bandgap CISSe solar cells.     

Improved SnO2 Electron Transport Layers Solution‐Deposited at Near Room Temperature for Rigid or Flexible Perovskite Solar Cells with High Efficiencies

Electron transport layer (ETL) is a functional layer of great significance for boosting the power conversion efficiency (PCE) of perovskite solar cells (PSCs). To date, it is still a challenge to simultaneously reduce the surface defects and improve the crystallinity in ETLs during their low‐temperature processing. Here, a novel strategy for the mediation of in situ regrowth of SnO₂ nanocrystal ETLs is reported: introduction of controlled trace amounts of surface absorbed water on the fluorinated tin oxide (FTO) or indium–tin oxide (ITO) surfaces of the substrates using ultraviolet ozone (UVO) pretreatment. The optimum amount of adsorbed water plays a key role in balancing the hydrolysis–condensation reactions during the structural evolution of SnO₂ thin films. This new approach results in a full‐coverage SnO₂ ETL with a desirable morphology and crystallinity for superior optical and electrical properties, as compared to the control SnO₂ ETL without the UVO pretreatment. Finally, the rigid and flexible PSC devices based on the new SnO₂ ETLs yield high PCEs of up to 20.5% and 17.5%, respectively.     

Plasmonic Perovskite Solar Cells Utilizing Au@SiO<Subscript>2</Subscript> Core-Shell Nanoparticles

The role of Au@SiO₂ core-shell nanoparticles on optical properties of perovskite solar cells has been explored using both the theoretical computations and the experiments. A quasi-static model is used to study the surface plasmon resonances (SPRs) of Au@SiO₂ core-shell nanospheres. Au@SiO₂ core-shell nanoparticles, with varying shell thickness and core radius, were assumed to be embedded in methylammonium lead triiodide (CH₃NH₃PbI₃) perovskite active layer. Enhanced absorption in the active layer is obtained due to the near-field plasmonic effect of the embedded core-shell nanoparticles. Theoretical modelling shows that a shell thickness of 1 nm and core diameter of 20 nm provide absorption enhancement in the orange-red region of the electromagnetic spectrum. Experiments performed using ～20-nm-sized Au@SiO₂ core-shell nanoparticles (with a shell thickness of ～1 nm) clearly demonstrate the enhanced absorption and the resulting enhancement in photocurrent due to the plasmonic effects. An efficiency enhancement of over 18 % is obtained for the best plasmonic perovskite solar cell containing Au@SiO₂ nanoparticles in Au@SiO₂-TiO₂ weight ratio of ～1 %. Incident photon-to-current conversion efficiency (IPCE) data also showed enhancement in photocurrent for the plasmonic device. The quasi-static modelling approach provides a good correlation between theory and experiment.     

Size-dependent scattering efficiency in dye-sensitized solar cell

Effect of scattering particle size on light scattering efficiency in dye-sensitized solar cell has been investigated with a FTO/semitransparent nano-TiO₂ layer (main-layer)/scattering layer (overlayer) structure, where two different rutile TiO₂ particles of 0.3 μm (G1) and 0.5 μm (G2) were used for a scattering overlayer and 20-nm anatase particle for nano-TiO₂ main-layer. The conversion efficiency of 7.55% for the 7 μm-thick main-layer film is improved to 8.94% and 8.78% when G1 and G2 particulate overlayers are introduced, respectively, corresponding to 18.4% and 16.3% increments. While the conversion efficiency of the 14 μm-thick main-layer is slightly improved from 8.60% to 9.09% and 9.15% upon depositing G1 and G2 particulate overlayers, respectively. Significant improvement and strong size-dependence upon deposition of scattering overlayer on the relatively thinner TiO₂ main-layer film are associated with the quantity and wavelength of transmitted light and the difference in reflectivity of G1 and G2 scattering particles.     

Spontaneous Interface Ion Exchange: Passivating Surface Defects of Perovskite Solar Cells with Enhanced Photovoltage

Interface engineering is of great concern in photovoltaic devices. For the solution‐processed perovskite solar cells, the modification of the bottom surface of the perovskite layer is a challenge due to solvent incompatibility. Herein, a Cl‐containing tin‐based electron transport layer; SnO_x‐Cl, is designed to realize an in situ, spontaneous ion‐exchange reaction at the interface of SnO_x‐Cl/MAPbI₃. The interfacial ion rearrangement not only effectively passivates the physical contact defects, but, at the same time, the diffusion of Cl ions in the perovskite film also causes longitudinal grain growth and further reduces the grain boundary density. As a result, an efficiency of 20.32% is achieved with an extremely high open‐circuit voltage of 1.19 V. This versatile design of the underlying carrier transport layer provides a new way to improve the performance of perovskite solar cells and other optoelectronic devices.     

Simultaneous Contact and Grain‐Boundary Passivation in Planar Perovskite Solar Cells Using SnO2‐KCl Composite Electron Transport Layer

The performance of perovskite solar cells is sensitive to detrimental defects, which are prone to accumulate at the interfaces and grain boundaries of bulk perovskite films. Defect passivation at each region will lead to reduced trap density and thus less nonradiative recombination loss. However, it is challenging to passivate defects at both the grain boundaries and the bottom charge transport layer/perovskite interface, mainly due to the solvent incompatibility and complexity in perovskite formation. Here SnO₂‐KCl composite electron transport layer (ETL) is utilized in planar perovskite solar cells to simultaneously passivate the defects at the ETL/perovskite interface and the grain boundaries of perovskite film. The K and Cl ions at the ETL/perovskite interface passivate the ETL/perovskite contact. Meanwhile, K ions from the ETL can diffuse through the perovskite film and passivate the grain boundaries. An enhancement of open‐circuit voltage from 1.077 to 1.137 V and a corresponding power conversion efficiency increasing from 20.2% to 22.2% are achieved for the devices using SnO₂‐KCl composite ETL. The composite ETL strategy reported herein provides an avenue for defect passivation to further increase the efficiency of perovskite solar cells.     

Tantalum Nitride Electron‐Selective Contact for Crystalline Silicon Solar Cells

Minimizing carrier recombination at contact regions by using carrier‐selective contact materials, instead of heavily doping the silicon, has attracted considerable attention for high‐efficiency, low‐cost crystalline silicon (c‐Si) solar cells. A novel electron‐selective, passivating contact for c‐Si solar cells is presented. Tantalum nitride (TaN _x ) thin films deposited by atomic layer deposition are demonstrated to provide excellent electron‐transporting and hole‐blocking properties to the silicon surface, due to their small conduction band offset and large valence band offset. Thin TaN_x interlayers provide moderate passivation of the silicon surfaces while simultaneously allowing a low contact resistivity to n‐type silicon. A power conversion efficiency (PCE) of over 20% is demonstrated with c‐Si solar cells featuring a simple full‐area electron‐selective TaN_x contact, which significantly improves the fill factor and the open circuit voltage (V_oc) and hence provides the higher PCE. The work opens up the possibility of using metal nitrides, instead of metal oxides, as carrier‐selective contacts or electron transport layers for photovoltaic devices.     

Conductive Hole‐Selective Passivating Contacts for Crystalline Silicon Solar Cells

Defect state passivation and conductivity of materials are always in opposition; thus, it is unlikely for one material to possess both excellent carrier transport and defect state passivation simultaneously. As a result, the use of partial passivation and local contact strategies are required for silicon solar cells, which leads to fabrication processes with technical complexities. Thus, one material that possesses both a good passivation and conductivity is highly desirable in silicon photovoltaic (PV) cells. In this work, a passivation‐conductivity phase‐like diagram is presented and a conductive‐passivating‐carrier‐selective contact is achieved using PEDOT:Nafion composite thin films. A power conversion efficiency of 18.8% is reported for an industrial multicrystalline silicon solar cell with a back PEDOT:Nafion contact, demonstrating a solution‐processed organic passivating contact concept. This concept has the potential advantages of omitting the use of conventional dielectric passivation materials deposited by costly high‐vacuum equipment, energy‐intensive high‐temperature processes, and complex laser opening steps. This work also contributes an effective back‐surface field scheme and a new hole‐selective contact for p‐type and n‐type silicon solar cells, respectively, both for research purposes and as a low‐cost surface engineering strategy for future Si‐based PV technologies.     

Universal Strategy with Structural and Chemical Crosslinking Interface for Efficient and Stable Perovskite Solar Cells

Due to the limited interface contact and weak interfacial interaction, planar heterojunction perovskite solar cells (PSCs) have space for further improvement. Herein, a structural and chemical crosslinking interface is proposed and constructed by introducing an extra layer, which blends tin dioxide (SnO₂) nanoparticles with chloride salts. Since the incorporated materials can be dissolved during the fabrication of perovskite, the quality of perovskite films is improved, leading to larger grain size and reduced trap-state density. Also, more chloride ions at the SnO₂/perovskite interface are observed and the interaction between Cl⁻ and Sn⁴⁺ is confirmed. It results in more pronounced n-type SnO₂ with better conductivity and deeper conduction bands, leading to preferable energy level alignment between SnO₂ and perovskite. Consequently, the open-circuit voltage and fill factor of the devices increase, and target cells present better stability, retaining 98% of initial efficiencies after >10 000 h storage in dry air (≈5% relative humidity) and maintaining 85.50% of the initial efficiency after 1000 h of operation under light. This strategy enables the achievement of 25.28% efficiency with a low bandgap (1.53 eV) perovskite composition, and it is confirmed to be universal when other related materials are utilized.     

Overcoming Efficiency Limitations of SnS‐Based Solar Cells

Thin‐film solar cells are made by vapor deposition of Earth‐abundant materials: tin, zinc, oxygen and sulfur. These solar cells had previously achieved an efficiency of about 2%, less than 1/10 of their theoretical potential. Loss mechanisms are systematically investigated and mitigated in solar cells based on p‐type tin monosulfide, SnS, absorber layers combined with n‐type zinc oxysulfide, Zn(O,S) layers that selectively transmit electrons, but block holes. Recombination at grain boundaries is reduced by annealing the SnS films in H₂S to form larger grains with fewer grain boundaries. Recombination near the p‐SnS/n‐Zn(O,S) junction is reduced by inserting a few monolayers of SnO₂ between these layers. Recombination at the junction is also reduced by adjusting the conduction band offset by tuning the composition of the Zn(O,S), and by reducing its free electron concentration with nitrogen doping. The resulting cells have an efficiency over 4.4%, which is more than twice as large as the highest efficiency obtained previously by solar cells using SnS absorber layers.     

A Surface Design for Enhancement of Light Trapping Efficiencies in Thin Film Silicon Solar Cells

We report on a surface design of thin film silicon solar cells based on silver nanoparticle arrays and blazed grating arrays. The light transmittance is increased at the front surface of the cells, utilizing the surface plasmon resonance effect induced by silver nanoparticle arrays. As a reflection layer structure, blazed gratings are placed at the rear surface to increase the light reflectance at bottom of the thin film cells. With the combination of the silver nanoparticle arrays and the blazed gratings, the light trapping efficiency of the thin film solar cell is characterized by its light absorptance, which is determined from the transmittance at front surface and the reflectance at bottom, via the finite-difference time-domain (FDTD) numerical simulation method. The results reveal that the light trapping efficiency is enhanced as the structural parameters are optimized. This work also shows that the surface plasmon resonance effect induced by the silver nanoparticles and the grating characteristics of the blazed gratings play crucial roles in the design of the thin film silicon solar cells.     

Tin Oxide as a Protective Heterojunction with Silicon for Efficient Photoelectrochemical Water Oxidation in Strongly Acidic or Alkaline Electrolytes

Photoelectrodes without a p–n junction are often limited in efficiency by charge recombination at semiconductor surfaces and slow charge transfer to electrocatalysts. This study reports that tin oxide (SnO_x) layers applied to n‐Si wafers after forming a thin chemically oxidized SiO_x layer can passivate the Si surface while producing ≈620 mV photovoltage under 100 mW cm^?2 of simulated sunlight. The SnO_x layer makes ohmic contacts to Ni, Ir, or Pt films that act as precatalysts for the oxygen‐evolution reaction (OER) in 1.0 m KOH(aq) or 1.0 m H₂SO₄(aq). Ideal regenerative solar‐to‐O₂(g) efficiencies of 4.1% and 3.7%, respectively, are obtained in 1.0 m KOH(aq) with Ni or in 1.0 m H₂SO₄(aq) with Pt/IrO_x layers as OER catalysts. Stable photocurrents for >100 h are obtained for electrodes with patterned catalyst layers in both 1.0 m KOH(aq) and 1.0 m H₂SO₄(aq).     

Surface modification via wet chemical etching of single-crystalline silicon for photovoltaic application

The potential of solar cells have not been fully tapped due to the lack of energy conversion efficiency. There are three important mechanisms in producing high efficiency cells to harvest solar energy; reduction of light reflectance, enhancement of light trapping in the cell and increment of light absorption. The current work represent studies conducted in surface modification of single-crystalline silicon solar cells using wet chemical etching techniques. Two etching types are applied; alkaline etching (KOH:IPA:DI) and acidic etching (HF:HNO₃:DI). The alkaline solution resulted in anisotropic profile that leads to the formation of inverted pyramids. While acidic solution formed circular craters along the front surface of silicon wafer. This surface modification will leads to the reduction of light reflectance via texturizing the surface and thereby increases the short circuit current and conversion rate of the solar cells.