Atomic Layer Deposition of Tin Monosulfide Thin Films

Thin film solar cells made from earth‐abundant, non‐toxic materials are needed to replace the current technology that uses Cu(In,Ga)(S,Se)₂ and CdTe, which contain scarce and toxic elements. One promising candidate absorber material is tin monosulfide (SnS). In this report, pure, stoichiometric, single‐phase SnS films were obtained by atomic layer deposition (ALD) using the reaction of bis(N,N′‐diisopropylacetamidinato)tin(II) [Sn(MeC(N‐ⁱPr)₂)₂] and hydrogen sulfide (H₂S) at low temperatures (100 to 200 °C). The direct optical band gap of SnS is around 1.3 eV and strong optical absorption (α > 10⁴ cm^?1) is observed throughout the visible and near‐infrared spectral regions. The films are p‐type semiconductors with carrier concentration on the order of 10¹⁶ cm^?3 and hole mobility 0.82–15.3 cm²V^?1s^?1 in the plane of the films. The electrical properties are anisotropic, with three times higher mobility in the direction through the film, compared to the in‐plane direction.     

Atomic Layer Deposition of CdS Quantum Dots for Solid‐State Quantum Dot Sensitized Solar Cells

Functioning quantum dot (QD) sensitized solar cells have been fabricated using the vacuum deposition technique atomic layer deposition (ALD). Utilizing the incubation period of CdS growth by ALD on TiO₂, we are able to grow QDs of adjustable size which act as sensitizers for solid‐state QD‐sensitized solar cells (ssQDSSC). The size of QDs, studied with transmission electron microscopy (TEM), varied with the number of ALD cycles from 1‐10 nm. Photovoltaic devices with the QDs were fabricated and characterized using a ssQDSSC device architecture with 2,2',7,7'‐tetrakis‐(N,N‐di‐p methoxyphenylamine) 9,9'‐spirobifluorene (spiro‐OMeTAD) as the solid‐state hole conductor. The ALD approach described here can be applied to fabrication of quantum‐confined structures for a variety of applications, including solar electricity and solar fuels. Because ALD provides the ability to deposit many materials in very high aspect ratio substrates, this work introduces a strategy by which material and optical properties of QD sensitizers may be adjusted not only by the size of the particles but also in the future by the composition.     

Interfacial Effects of Tin Oxide Atomic Layer Deposition in Metal Halide Perovskite Photovoltaics

Metal halide perovskites offer a wide and tunable bandgap, making them promising candidates for top‐cell absorbers in tandem photovoltaics. In this work, the authors aim to understand the atomic layer deposition (ALD) precursor–perovskite interactions of the tin oxide ALD system and the role of organic fullerenes at the perovskite–tin oxide interface while establishing a framework for developing alternative perovskite‐compatible ALD processes in the future. It is shown, in the case of tin oxide ALD growth with tetrakis(dimethylamino)tin(IV) and water on FA_0.83Cs_0.17Pb(I_0.83Br_0.17)₃ perovskite, that perovskite stability is most sensitive to metal–organic exposure at elevated temperatures with an onset near 110 °C, resulting in removal of the formamidinium cation. Transitioning from ALD to pulsed‐chemical vapor deposition tin oxide growth can minimize the degradation effects. Investigation of fullerenes at the perovskite interface shows that thin fullerene layers offer minor improvements to perovskite stability under ALD conditions, but significant enhancement in carrier extraction. Fullerene materials are undesirable due to fabrication cost and poor mechanical stability. Compositional tuning of the perovskite material can improve the fullerene‐free device performance. This method is demonstrated with a bromine‐rich perovskite phase to enable an 8.2% efficient perovskite device with all‐inorganic extraction layers.     

Enhanced Nucleation of Atomic Layer Deposited Contacts Improves Operational Stability of Perovskite Solar Cells in Air

Metal‐halide perovskites show promise as highly efficient solar cells, light‐emitting diodes, and other optoelectronic devices. Ensuring long‐term stability is now a major priority. In this study, an ultrathin (2 nm) layer of polyethylenimine ethoxylated (PEIE) is used to functionalize the surface of C₆₀ for the subsequent deposition of atomic layer deposition (ALD) SnO₂, a commonly used electron contact bilayer for p–i–n devices. The enhanced nucleation results in a more continuous initial ALD SnO₂ layer that exhibits superior barrier properties, protecting Cs_0.25FA_0.75Pb(Br_0.20I_0.80)₃ films upon direct exposure to high temperatures (200 °C) and water. This surface modification with PEIE translates to more stable solar cells under aggressive testing conditions in air at 60 °C under illumination. This type of “built‐in” barrier layer mitigates degradation pathways not addressed by external encapsulation, such as internal halide or metal diffusion, while maintaining high device efficiency up to 18.5%. This nucleation strategy is also extended to ALD VO_x films, demonstrating its potential to be broadly applied to other metal oxide contacts and device architectures.     

Atomic Layer Deposition of Highly Transparent Platinum Counter Electrodes for Metal/Polymer Flexible Dye‐Sensitized Solar Cells

Atomic layer deposition (ALD) is used to deposit Pt nanoparticles at low temperature (25–150 °C) to fabricate highly transparent counter electrodes (CEs) for flexible dye‐sensitized solar cells (DSCs). The Pt nanoparticles (NPs) are deposited for different number of ALD cycles on indium tin oxide (ITO)/polyethylene naphthalate (PEN) substrates. Rutherford backscattering spectroscopy (RBS) and transmission electron microscopy (TEM) are used to assess the Pt NP loading, density, and size. There is a trade‐off between transparency and catalytic activity of the CE, and the best cell performances of back‐side‐illuminated DSCs (≈3.7% efficiency) are achieved for Pt ALD at temperatures in the range of 100–150 °C, even though deposition at 25 °C is also viable. The best cell produced with ALD platinized CE (100 cycles at 100 °C) outperforms the reference cells fabricated with electrodeposited and sputtered Pt CEs, with relative improvements in efficiency of 19% and 29%, respectively. In addition, these parameters are used to fabricate a large area CE for a sub‐module (active area of 17.6 cm²), resulting in an efficiency of 3.1%, which demonstrates the scalability of the process.     

Overcoming Efficiency Limitations of SnS‐Based Solar Cells

Thin‐film solar cells are made by vapor deposition of Earth‐abundant materials: tin, zinc, oxygen and sulfur. These solar cells had previously achieved an efficiency of about 2%, less than 1/10 of their theoretical potential. Loss mechanisms are systematically investigated and mitigated in solar cells based on p‐type tin monosulfide, SnS, absorber layers combined with n‐type zinc oxysulfide, Zn(O,S) layers that selectively transmit electrons, but block holes. Recombination at grain boundaries is reduced by annealing the SnS films in H₂S to form larger grains with fewer grain boundaries. Recombination near the p‐SnS/n‐Zn(O,S) junction is reduced by inserting a few monolayers of SnO₂ between these layers. Recombination at the junction is also reduced by adjusting the conduction band offset by tuning the composition of the Zn(O,S), and by reducing its free electron concentration with nitrogen doping. The resulting cells have an efficiency over 4.4%, which is more than twice as large as the highest efficiency obtained previously by solar cells using SnS absorber layers.     

Creating Highly Active Atomic Layer Deposited NiO Electrocatalysts for the Oxygen Evolution Reaction

Atomic layer deposition (ALD) provides a promising route for depositing uniform thin coatings of electrocatalysts useful in many technologies, including the splitting of water. For materials such as NiO _x that readily form hydrous oxides, however, the smooth, compact films deposited by ALD may result in higher overpotentials due to low catalyst surface area compared to other deposition methods. Here, the use of ALD–NiO thin films as oxygen evolution reaction (OER) electrocatalysts is explored. Thin films of crystalline ALD­–NiO are deposited and OER activity is tested using cyclic voltammetry (CV). Fe incorporated from the electrolyte can increase the activity of NiO, and it is shown that the turnover frequency (TOF) increases tenfold by going from an Fe‐poor to Fe‐rich KOH electrolyte. Applying a potential exfoliates the NiO, increasing the number of electrochemically accessible Ni sites. Interestingly, by X‐ray photoelectron spectroscopy (XPS) and CV, it is found that an Fe‐rich electrolyte reduces the amount of restructuring and oxidation is found. It is shown that a high surface area, high TOF catalyst may be created by using a two‐step process in which the sample is sequentially conditioned in Fe‐poor then Fe‐rich KOH. This work highlights the importance of pretreatment on catalytic activity for compact NiO films deposited by ALD.     

Active MnOx Electrocatalysts Prepared by Atomic Layer Deposition for Oxygen Evolution and Oxygen Reduction Reactions

The ability to deposit conformal catalytic thin films enables opportunities to achieve complex nanostructured designs for catalysis. Atomic layer deposition (ALD) is capable of creating conformal thin films over complex substrates. Here, ALD‐MnO_x on glassy carbon is investigated as a catalyst for the oxygen evolution reaction (OER) and the oxygen reduction reaction (ORR), two reactions that are of growing interest due to their many applications in alternative energy technologies. The films are characterized by X‐ray photoelectron spectroscopy, X‐ray diffraction, scanning electron microscopy, ellipsometry, and cyclic voltammetry. The as‐deposited films consist of Mn(II)O, which is shown to be a poor catalyst for the ORR, but highly active for the OER. By controllably annealing the samples, Mn₂O₃ catalysts with good activity for both the ORR and OER are synthesized. Hypotheses are presented to explain the large difference in the activity between the MnO and Mn₂O₃ catalysts for the ORR, but similar activity for the OER, including the effects of surface oxidation under experimental conditions. These catalysts synthesized though ALD compare favorably to the best MnO_x catalysts in the literature, demonstrating a viable way to produce highly active, conformal thin films from earth‐abundant materials for the ORR and the OER.     

Kinetically Controlled Growth of Phase‐Pure SnS Absorbers for Thin Film Solar Cells: Achieving Efficiency Near 3% with Long‐Term Stability Using an SnS/CdS Heterojunction

Facile control over the morphology of phase pure tin monosulfide (SnS) thin films, a promising future absorber for thin film solar cells, is enabled by controlling the growth kinetics in vapor transport deposition of congruently evaporated SnS. The pressure during growth is found to be a key factor in modifying the final shape of the SnS grains. The optimized cube‐like SnS shows p‐type with the apparent carrier concentration of ≈10¹⁷ cm^?3 with an optical bandgap of 1.32 eV. The dense and flat surface morphology of 1 µm thick SnS combined with the minimization of pinholes directly leads to improved diode quality and increased shunt resistance of the SnS/CdS heterojunction (cell area of 0.30 cm²). An open‐circuit voltage of up to 0.3068 V is achieved, which is independently characterized at the Korea Institute of Energy Research (KIER). Detailed high‐resolution transmission electron microscopy analysis confirms the absence of detrimental secondary phases such as Sn₂S₃ or SnS₂ in the SnS grains or at intergrain boundaries. The initial efficiency level of 98.5% is maintained even after six months of storage in air, and the final efficiency of the champion SnS/CdS cell, certified at the KIER, is 2.938% with an open‐circuit voltage of 0.2912 V.     

All‐Oxide MoOx/SnOx Charge Recombination Interconnects for Inverted Organic Tandem Solar Cells

Multijunction solar cells are designed to improve the overlap with the solar spectrum and to minimize losses due to thermalization. Aside from the optimum choice of photoactive materials for the respective sub‐cells, a proper interconnect is essential. This study demonstrates a novel all‐oxide interconnect based on the interface of the high‐work‐function (WF) metal oxide MoO_x and low‐WF tin oxide (SnO_x). In contrast to typical p‐/n‐type tunnel junctions, both the oxides are n‐type semiconductors with a WF of 5.2 and 4.2 eV, respectively. It is demonstrated that the electronic line‐up at the interface of MoO_x and SnO_x comprises a large intrinsic interface dipole (≈0.8 eV), which is key to afford ideal alignment of the conduction band of MoO_x and SnO_x, without the requirement of an additional metal or organic dipole layer. The presented MoO_x/SnO_x interconnect allows for the ideal (loss‐free) addition of the open circuit voltages of the two sub‐cells.     

Interface Modification of Tin Oxide Electron-Transport Layer for the Efficiency and Stability Enhancement of Organic Solar Cells

A small molecular phenanthroline derivative Phen-NaDPO (3-[6-(diphenylphosphinyl)-2-naphthalenyl]-1,10-Phenanthroline) to modify tin oxide (SnO₂) electron-transport layer (ETL) in organic solar cells is employed. Quantum chemistry calculations and experimental results show that Phen-NaDPO can interact with SnO₂, thereby effectively passivating the surface defects, reducing the work function and improving the electrical conductivity of SnO₂, leading to more efficient electron extraction and transport in the organic solar cells (OSCs). Moreover, upon the Phen-NaDPO modification, the decreased surface energy of SnO₂ ETL accounts for enhanced exciton dissociation and charge transport, due to the more ordered molecular organizations of the active layers. Consequently, the inverted OSCs involving Phen-NaDPO/SnO₂ ETLs exhibit an enhanced power conversion efficiency of 17.06% (PM6:Y6) and 18.31% (PM6:L8-BO), which is the highest efficiency for SnO₂ ETL-based binary solar cells to date. Furthermore, the devices based on Phen-NaDPO/SnO₂ ETL show better device stability (storage stability, photostability and humid stability), with T₈₀ exceeding 200 h encapsulated under light irradiation and 400 h without encapsulation in high-humidity ambient condition. These results demonstrate that the modification of SnO₂ using wide-band highly stable conjugated small molecules is very promising for simultaneously improve the efficiencies and device stability of OSCs.     

Aquointermediate Assisted Highly Orientated Perovskite Thin Films toward Thermally Stable and Efficient Solar Cells

The stability of single‐crystalline/monocrystalline‐like perovskite film is expected to be better than its microcrystalline counterparts. In the present work, highly orientated perovskite thin films (CH₃NH₃PbI_3–xCl_x) are prepared by means of aquointermediates assisted solution process. It displays super‐duper preferred‐orientation along <110> direction that is close to the single crystal, and its diffraction intensity ratio of (110)/(310) is nearly two orders of magnitude higher in contrast to the films that prepared by traditional way. Owing to its superior performances, e.g., highly crystallized quality, stress‐free inside films, longer electron lifetime, faster temporal response time, etc., the highly orientated perovskite‐based solar cells accordingly allow realizing high efficiency while improving its thermal stability.