Efficient Indium‐Doped TiOx Electron Transport Layers for High‐Performance Perovskite Solar Cells and Perovskite‐Silicon Tandems

In addition to a good perovskite light absorbing layer, the hole and electron transport layers play a crucial role in achieving high‐efficiency perovskite solar cells. Here, a simple, one‐step, solution‐based method is introduced for fabricating high quality indium‐doped titanium oxide electron transport layers. It is shown that indium‐doping improves both the conductivity of the transport layer and the band alignment at the ETL/perovskite interface compared to pure TiO₂, boosting the fill‐factor and voltage of perovskite cells. Using the optimized transport layers, a high steady‐state efficiency of 17.9% for CH₃NH₃PbI₃‐based cells and 19.3% for Cs_0.05(MA_0.17FA_0.83)_0.95Pb(I_0.83Br_0.17)₃‐based cells is demonstrated, corresponding to absolute efficiency gains of 4.4% and 1.2% respectively compared to TiO₂‐based control cells. In addition, a steady‐state efficiency of 16.6% for a semi‐transparent cell is reported and it is used to achieve a four‐terminal perovskite‐silicon tandem cell with a steady‐state efficiency of 24.5%.     

Electron‐Beam‐Related Studies of Halide Perovskites: Challenges and Opportunities

Electron beam microscopy and related characterization techniques play an important role in revealing the microstructural, morphological, physical, and chemical information of halide perovskites and their impact on associated optoelectronic devices. However, electron beam irradiation usually causes damage to these beam‐sensitive materials, negatively impacting their device performance, and complicating this interpretation. In this article, the electron microscopy and spectroscopy techniques are reviewed that are crucial for the understanding of the crystallization and microstructure of halide perovskites. In addition, special attention is paid to assessing and mitigating the electron beam‐induced damage caused by these techniques. Since the halide perovskites are fragile, a protocol involving delicate control of both electron beam dose and dose rate, coupled with careful data analysis, is key to enable the acquisition of reliable structural and compositional information such as atomic‐resolution images, chemical elemental mapping and electron diffraction patterns. Limiting the electron beam dose is critical parameter enabling the characterization of various halide perovskites. Novel methods to unveil the mechanisms of device operation, including charge carrier generation, diffusion, and extraction are presented in scanning electron microscopy studies combined with electron‐beam‐induced current and cathodoluminescence mapping. Future opportunities for electron‐beam‐related characterizations of halide perovskites are also discussed.     

Reliability of Small Molecule Organic Photovoltaics with Electron‐Filtering Compound Buffer Layers

Electron‐filtering compound buffer layers (EF‐CBLs) improve charge extraction in organic photovoltaic cells (OPVs) by blending an electron‐conducting fullerene with a wide energy gap exciton‐blocking molecule. It is found that devices with EF‐CBLs with high glass transition temperatures and a low crystallization rate produce highly stable morphologies and devices. The most stable OPVs employ 1:1 2,2′,2″‐(1,3,5‐benzenetriyl tris‐[1‐phenyl‐1H‐benzimidazole] TPBi:C₇₀ buffers that lose <20% of their initial power conversion efficiency of 6.6 ± 0.6% after 2700 h under continuous simulated AM1.5G illumination, and show no significant degradation after 100 days of outdoor aging. When exposed to 100‐sun (100 kW m^?2) concentrated solar illumination for 5 h, their power conversion efficiencies decrease by <8%. Moreover, it is found that the reliability of the devices employing stable EF‐CBLs has either reduced or no dependence on operating temperature up to 130 °C compared with BPhen:C₆₀ devices whose fill factors show thermally activated degradation. The robustness of TPBi:C₇₀ devices under extreme aging conditions including outdoor exposure, high temperature, and concentrated illumination is promising for the future of OPV as a stable solar cell technology.     

Efficient Perovskite Solar Cells Based on a Solution Processable Nickel(II) Phthalocyanine and Vanadium Oxide Integrated Hole Transport Layer

An organic–inorganic integrated hole transport layer (HTL) composed of the solution‐processable nickel phthalocyanine (NiPc) abbreviated NiPc‐(OBu)₈ and vanadium(V) oxide (V₂O₅) is successfully incorporated into structured mesoporous perovskite solar cells (PSCs). The optimized PSCs show the highest stabilized power conversion efficiency of up to 16.8% and good stability under dark ambient conditions. These results highlight the potential application of organic–inorganic integrated HTLs in PSCs.     

Graphene‐Based Electron Transport Layers in Perovskite Solar Cells: A Step‐Up for an Efficient Carrier Collection

The electron transport layer (ETL) plays a fundamental role in perovskite solar cells. Recently, graphene‐based ETLs have been proved to be good candidate for scalable fabrication processes and to achieve higher carrier injection with respect to most commonly used ETLs. Here, the effects of different graphene‐based ETLs in sensitized methylammonium lead iodide (MAPI) solar cells are experimentally studied. By means of time‐integrated and picosecond time‐resolved photoluminescence techniques, the carrier recombination dynamics in MAPI films embedded in different ETLs is investigated. Using graphene doped mesoporous TiO₂ (G+mTiO₂) with the addition of a lithium‐neutralized graphene oxide (GO‐Li) interlayer as ETL, it is found find that the carrier collection efficiency is increased by about a factor two with respect to standard mTiO₂. Taking advantage of the absorption coefficient dispersion, the MAPI layer morphology is probed, along the thickness, finding that the MAPI embedded in the ETL composed by G+mTiO₂ plus GO‐Li brings to a very good crystalline quality of the MAPI layer with a trap density about one order of magnitude lower than that found with the other ETLs. In addition, this ETL freezes MAPI at the tetragonal phase, regardless of the temperature. Graphene‐based ETLs can open the way to significant improvement of perovskite solar cells.     

Conductive and Stable Magnesium Oxide Electron‐Selective Contacts for Efficient Silicon Solar Cells

A high Schottky barrier (>0.65 eV) for electrons is typically found on lightly doped n‐type crystalline (c‐Si) wafers for a variety of contact metals. This behavior is commonly attributed to the Fermi‐level pinning effect and has hindered the development of n‐type c‐Si solar cells, while its p‐type counterparts have been commercialized for several decades, typically utilizing aluminium alloys in full‐area, and more recently, partial‐area rear contact configurations. Here the authors demonstrate a highly conductive and thermally stable electrode composed of a magnesium oxide/aluminium (MgO_x/Al) contact, achieving moderately low resistivity Ohmic contacts on lightly doped n‐type c‐Si. The electrode, functionalized with nanoscale MgO_x films, significantly enhances the performance of n‐type c‐Si solar cells to a power conversion efficiency of 20%, advancing n‐type c‐Si solar cells with full‐area dopant‐free rear contacts to a point of competitiveness with the standard p‐type architecture. The low thermal budget of the cathode formation, its dopant‐free nature, and the simplicity of the device structure enabled by the MgO_x/Al contact open up new possibilities in designing and fabricating low‐cost optoelectronic devices, including solar cells, thin film transistors, or light emitting diodes.     

Inkjet‐Printed Micrometer‐Thick Perovskite Solar Cells with Large Columnar Grains

Transferring the high power conversion efficiencies (PCEs) of spin‐coated perovskite solar cells (PSCs) on the laboratory scale to large‐area photovoltaic modules requires a significant advance in scalable fabrication methods. Digital inkjet printing promises scalable, material, and cost‐efficient deposition of perovskite thin films on a wide range of substrates and in arbitrary shapes. In this work, high‐quality inkjet‐printed triple‐cation (methylammonium, formamidinium, and cesium) perovskite layers with exceptional thicknesses of >1 µm are demonstrated, enabling unprecedentedly high PCEs > 21% and stabilized power output efficiencies > 18% for inkjet‐printed PSCs. In‐depth characterization shows that the thick inkjet‐printed perovskite thin films deposited using the process developed herein exhibit a columnar crystal structure, free of horizontal grain boundaries, which extend over the entire thickness. A thin film thickness of around 1.5 µm is determined as optimal for PSC for this process. Up to this layer thickness X‐ray photoemission spectroscopy analysis confirms the expected stoichiometric perovskite composition at the surface and shows strong deviations and inhomogeneities for thicker thin films. The micrometer‐thick perovskite thin films exhibit remarkably long charge carrier lifetimes, highlighting their excellent optoelectronic characteristics. They are particularly promising for next‐generation inkjet‐printed perovskite solar cells, photodetectors, and X‐ray detectors.     

Charge Accumulation and Hysteresis in Perovskite‐Based Solar Cells: An Electro‐Optical Analysis

Organic–inorganic hybrid perovskite solar cells based on CH₃NH₃PbI₃ have achieved great success with efficiencies exceeding 20%. However, there are increasing concerns over some reported efficiencies as the cells are susceptible to current–voltage (I–V) hysteresis effects. It is therefore essential that the origins and mechanisms of the I–V hysteresis can clearly be understood to minimize or eradicate these hysteresis effects completely for reliable quantification. Here, a detailed electro‐optical study is presented that indicates the hysteresis originates from lingering processes persisting from sub‐second to tens of seconds. Photocurrent transients, photoluminescence, electroluminescence, quasi‐steady state photoinduced absorption processes, and X‐ray diffraction in the perovskite solar cell configuration have been monitored. The slow processes originate from the structural response of the CH₃NH₃PbI₃ upon E‐field application and/or charge accumulation, possibly involving methylammonium ions rotation/displacement and lattice distortion. The charge accumulation can arise from inefficient charge transfer at the perovskite interfaces, where it plays a pivotal role in the hysteresis. These findings underpin the significance of efficient charge transfer in reducing the hysteresis effects. Further improvements of CH₃NH₃PbI₃‐based perovskite solar cells are possible through careful surface engineering of existing TiO₂ or through a judicious choice of alternative interfacial layers.     

Metal‐Oxide‐Free Methylammonium Lead Iodide Perovskite‐Based Solar Cells: the Influence of Organic Charge Transport Layers

Metal‐oxide‐free methylammonium lead iodide perovskite‐based solar cells are prepared using a dual‐source thermal evaporation method. This method leads to high quality reproducible films with large crystal domain sizes allowing for an in depth study of the effect of perovskite film thickness and the nature of the electron and hole blocking layers on the device performance. The power conversion efficiency increases from 4.7% for a device with only an organic electron blocking layer to almost 15% when an organic hole blocking layer is also employed. In addition to the in depth study on small area cells, larger area cells (approx. 1 cm^?2) are prepared and exhibit efficiencies in excess of 10%.     

Solution‐Processed Ternary Oxides as Carrier Transport/Injection Layers in Optoelectronics

With the remarkable progress in solution‐processed optoelectronics, high performance is required of the carrier transport/injection layer. Ternary oxides containing a variety of crystal structures, and adjustable composition that results in tunable optical and electrical properties, are one of the promising class of candidates to fulfill the requirements of carrier transport/injection layers for high‐performance and stable optoelectronic devices. Solution‐processed ternary oxides have seen considerable progress in recent decades, due to their advantages in the quest to design low‐cost, high‐performance, large‐scale, and stable optoelectronic devices. Herein, the recent advances of solution‐processed ternary oxides are reviewed. The first section consists of a brief introduction to the topic. In the following section, the fundamentals of the effect of tuning ternary oxide composition are summarized. Section three briefly reviews the synthesis approaches for preparing ternary oxides. Section four discusses the recent progress of solution‐processed ternary oxide as carrier transport/injection layer in optoelectronic devices (such as organic solar cells, perovskite solar cells, organic light emitting diodes, etc.). In this section, the impact of controlling ternary oxide composition on device performance and stability is highlighted. Finally, a brief summary and an outlook are given.     

High‐Efficiency CsPbI2Br Perovskite Solar Cells with Dopant‐Free Poly(3‐hexylthiophene) Hole Transporting Layers

CsPbI₂Br is emerging as a promising all‐inorganic material for perovskite solar cells (PSCs) due to its more stable lattice structure and moisture resistance compared to CsPbI₃, although its device performance is still much behind this counterpart. Herein, a preannealing process is developed and systematically investigated to achieve high‐quality CsPbI₂Br films by regulating the nucleation and crystallization of perovskite. The preannealing temperature and time are specifically optimized for a dopant‐free poly(3‐hexylthiophene) (P3HT)‐based device to target dopant‐induced drastic performance degradation for spiro‐OMeTAD‐based devices. The resulting P3HT‐based device exhibits comparable power conversion efficiency (PCE) to spiro‐OMeTAD‐based devices but much enhanced ambient stability with over 95% PCE after 1300 h. A diphenylamine derivative is introduced as a buffer layer to improve the energy‐level mismatch between CsPbI₂Br and P3HT. A record‐high PCE of 15.50% for dopant‐free P3HT‐based CsPbI₂Br PSCs is achieved by alleviating the open‐circuit voltage loss with the buffer layer. These results demonstrate that the preannealing processing together with a suitable buffer layer are applicable strategies for developing dopant‐free P3HT PSCs with high efficiency and stability.     

Cost-Effective Transparent N-Doped Tin Oxide Electrodes with Excellent Thermal and Chemical Stabilities Enabling Stable Perovskite Photovoltaics Based on Tin Oxide Electron Transport Layer

Perovskite solar cells (PSCs) incorporating chemical-bath-deposited (CBD) SnO₂ layers have garnered considerable attention because they combine high electron mobility and low-temperature processing, affording remarkable photovoltaic performance. However, the acidic conditions of CBD limit its compatibility with front transparent electrodes (FTEs). Herein, cost-effective, thermally stable, and highly transparent nitrogen-doped SnO₂ (NTO) FTEs tailored to integrate with CBD-SnO₂-based PSCs are developed. By precisely controlling the N dopant content in the magnetron sputtering process, a NTO FTE with a sheet resistance of 38.64 Ω/square, an optical transmittance of 86.17%, a smooth surface morphology (1.2 nm), and mechanical flexibility is obtained. Furthermore, doping N in SnO₂ imparts thermal and chemical stability superior to those of conventional Sn-doped In₂O₃ (ITO) electrodes. Additionally, a well-matched energy band of NTO with a SnO₂ electron transport layer (ETL) and homogeneous interfaces is a critical advantage. By implementing this multifaceted strategy using a novel low-cost NTO FTE, CBD-SnO₂-based PSCs with elevated open-circuit voltages and energy-barrier-free characteristics are fabricated. A champion power conversion efficiency of 20.43% is achieved, and 93.30% of the initial efficiency is retained even after 3 000 h without encapsulation. This integration of a NTO FTE with a SnO₂ ETL paves the way for robust and long-lasting high-performance PSCs.     

Cesium Doped NiOx as an Efficient Hole Extraction Layer for Inverted Planar Perovskite Solar Cells

Organic–inorganic hybrid perovskite solar cells have resulted in tremendous interest in developing next generation photovoltaics due to high record efficiency exceeding 22%. For inverted structure perovskite solar cells, the hole extraction layers play a significant role in achieving efficient and stable perovskite solar cell by modifying charge extraction, interfacial recombination losses, and band alignment. Here, cesium doped NiO_x is selected as a hole extraction layer to study the impact of Cs dopant on the optoelectronic properties of NiO_x and the photovoltaic performance. Cs doped NiO_x films are prepared by a simple solution‐based method. Both doped and undoped NiO_x films are smooth and highly transparent, while the Cs doped NiO_x exhibits better electron conductivity and higher work function. Therefore, Cs doping results in a significant improvement in the performance of NiO_x‐based inverted planar perovskite solar cells. The best efficiency of Cs doped NiO_x devices is 19.35%, and those devices show high stability as well. The improved efficiency in devices with Cs:NiO_x is attributed to a significant improvement in the hole extraction and better band alignment compared to undoped NiO_x. This work reveals that Cs doped NiO_x is very promising hole extraction material for high and stable inverted perovskite solar cells.     

High‐Performance Planar Perovskite Solar Cells Using Low Temperature,Solution–Combustion‐Based Nickel Oxide Hole Transporting Layer with Efficiency Exceeding 20%

NiO_x hole transporting layer has been extensively studied in optoelectronic devices. In this paper, the low temperature, solution–combustion‐based method is employed to prepare the NiO_x hole transporting layer. The resulting NiO_x thin films show better quality and preferable energy alignment with perovskite thin film compared to high temperature sol–gel‐processed NiO_x. With this, high‐performance perovskite solar cells are fabricated successfully with power conversion efficiency exceeding 20% using a modified two‐step prepared MA_1?yFA_yPbI_3?xCl_x perovskite. This efficiency value is among the highest values for NiO_x‐based devices. Various characterizations and analyses provide evidence of better film quality, enhanced charge transport and extraction, and suppressed charge recombination. Meanwhile, the device exhibits much better device stability compared to sol–gel‐processed NiO_x and poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate)‐based devices.     

8.9% Single‐Stack Inverted Polymer Solar Cells with Electron‐Rich Polymer Nanolayer‐Modified Inorganic Electron‐Collecting Buffer Layers

Enhanced power conversion efficiency (PCE) is reported in inverted polymer solar cells when an electron‐rich polymer nanolayer (poly(ethyleneimine) (PEI)) is placed on the surface of an electron‐collecting buffer layer (ZnO). The active layer is made with bulk heterojunction films of poly[[4,8‐bis[(2‐ethylhexyl)oxy]benzo[1,2‐b:4,5‐b′]dithiophene‐2,6‐diyl][3‐fluoro‐2‐[(2‐ethylhexyl)carbonyl]thieno[3,4‐b]thiophenediyl]] (PTB7) and [6,6]‐phenyl‐C₇₁‐butyric acid methyl ester (PC₇₁BM). The thickness of the PEI nanolayer is controlled to be 2 nm to minimize its insulating effect, which is confirmed by X‐ray photoelectron spectroscopy and optical absorption measurements. The Kelvin probe and ultraviolet photoelectron spectroscopy measurements demonstrate that the enhanced PCE by introducing the PEI nanolayer is attributed to the lowered conduction band energy of the ZnO layer via the formation of an interfacial dipole layer at the interfaces between the ZnO layer and the PEI nanolayer. The PEI nanolayer also improves the surface roughness of the ZnO layer so that the device series resistance can be noticeably decreased. As a result, all solar cell parameters including short circuit current density, open circuit voltage, fill factor, and shunt resistance are improved, leading to the PCE increase up to ≈8.9%, which is close to the best PCE reported using conjugated polymer electrolyte films.