Precursor Engineering for Ambient‐Compatible Antisolvent‐Free Fabrication of High‐Efficiency CsPbI2Br Perovskite Solar Cells

High temperature stable inorganic CsPbX₃ (X: I, Br, or mixed halides) perovskites with their bandgap tailored by tuning the halide composition offer promising opportunities in the design of ideal top cells for high‐efficiency tandem solar cells. Unfortunately, the current high‐efficiency CsPbX₃ perovskite solar cells (PSCs) are prepared in vacuum, a moisture‐free glovebox or other low‐humidity conditions due to their poor moisture stability. Herein, a new precursor system (HCOOCs, HPbI₃, and HPbBr₃) is developed to replace the traditional precursors (CsI, PbI₂, and PbBr₂) commonly used for solar cells of this type. Both the experiments and calculations reveal that a new complex (HCOOH?Cs⁺) is generated in this precursor system. The new complex is not only stable against aging in humid air ambient at 91% relative humidity, but also effectively slows the perovskite crystallization, making it possible to eliminate the popular antisolvent used in the perovskite CsPbI₂Br film deposition. The CsPbI₂Br PSCs based on the new precursor system achieve a champion efficiency of 16.14%, the highest for inorganic PSCs prepared in ambient air conditions. Meanwhile, high air stability is demonstrated for an unencapsulated CsPbI₂Br PSC with 92% of the original efficiency remaining after more than 800 h aging in ambient air.     

Fabrication of Efficient and Stable CsPbI3 Perovskite Solar Cells through Cation Exchange Process

Inorganic lead halide perovskites have attracted attention due to their tolerance to higher processing temperature and higher bandgap suitable for tandem solar cell application. Not only do they improve cell stability and efficiency, they also reveal many interesting and un‐anticipated material qualities. This work reports a simple cation exchange growth (CEG) method for fabricating inorganic high‐quality cesium lead iodide (CsPbI₃) by adding methylammonium iodide (MAI) additive in the precursor. X‐ray diffraction results reveal a multi‐stage film formation process whereby i) MAPbI₃ perovskite first formed that acts as a perovskite template for ii) subsequent ion exchange whereby the MA⁺ ions in the MAPbI₃ are replaced by Cs⁺ (as temperature ramps up) and iii) form g‐phase perovskite CsPbI₃. Optical microscopy, photoluminescence, and electrical characterizations reveal that the CEG process produces high‐quality film with better absorption, uniform and dense film with better interface, lower defects, and better stability. Using the CEG approach, the power conversion efficiency of the best CsPbI₃ solar cell is significantly increased up to 14.1% for the device fabricated using 1.0 m MAI additive. The outcome is beneficial for further improvement of inorganic perovskite solar cells and their application in perovskite‐silicon tandem devices.     

Dual Interfacial Modifications Enable High Performance Semitransparent Perovskite Solar Cells with Large Open Circuit Voltage and Fill Factor

In this work, both anode and cathode interfaces of p‐i‐n CH₃NH₃PbI₃ perovskite solar cells (PVSCs) are simultaneously modified to achieve large open‐circuit voltage (V_oc) and fill factor (FF) for high performance semitransparent PVSCs (ST‐PVSCs). At the anode, modified NiO serves as an efficient hole transport layer with appropriate surface property to promote the formation of smooth perovskite film with high coverage. At the cathode, a fullerene bisadduct, C₆₀(CH₂)(Ind), with a shallow lowest unoccupied molecular orbital level, is introduced to replace the commonly used phenyl‐C₆₁‐butyric acid methyl ester (PCBM) as an alternative electron transport layer in PVSCs for better energy level matching with the conduction band of the perovskite layer. Therefore, the V_oc, FF and power conversion efficiency (PCE) of the PVSCs increase from 1.05 V, 0.74 and 16.2% to 1.13 V, 0.80 and 18.1% when the PCBM is replaced by C₆₀(CH₂)(Ind). With the advantages of high V_oc and FF, ST‐PVSCs are also fabricated using an ultrathin transparent Ag as cathode, showing an encouraging PCEs of 12.6% with corresponding average visible transmittance (AVT) over 20%. These are the highest PCEs reported for ST‐PVSCs with similar AVTs paving the way for using ST‐PVSCs as power generating windows.     

In Situ Grain Boundary Functionalization for Stable and Efficient Inorganic CsPbI2Br Perovskite Solar Cells

The phase instability and large energy loss are two obstacles to achieve stable and efficient inorganic‐CsPbI_3?xBr_x perovskite solar cells. In this work, stable cubic perovskite (α)‐phase CsPbI₂Br is successfully achieved by Pb(Ac)₂ functioning at the grain boundary under low temperature. Ac^? strongly coordinates with CsPbI₂Br to stabilize the α‐phase and also make the grain size smaller and film uniform by fast nucleation. PbO is formed in situ at the grain boundary by decomposing Pb(Ac)₂ at high‐temperature annealing. The semiconducting PbO effectively passivates the surface states, reduces the interface recombination, and promotes the charge transport in CsPbI₂Br perovskite solar cells. A 12% efficiency and good stability are obtained for in situ PbO‐passivated CsPbI₂Br solar cells, while Pb(Ac)₂‐passivated device exhibits 8.7% performance and the highest stability, much better than the control device with 8.5% performance and inferior stability. This article highlights the extrinsic ionic grain boundary functionalization to achieve stable and efficient inorganic CsPbI_3?xBr_x materials and the devices.     

Structurally Reconstructed CsPbI2Br Perovskite for Highly Stable and Square‐Centimeter All‐Inorganic Perovskite Solar Cells

Although all‐inorganic perovskite solar cells (PSCs) demonstrate high thermal stability, cesium‐lead halide perovskites with high iodine content suffer from poor stability of the black phase (α‐phase). In this study, it is demonstrated that incorporating InCl₃ into the host perovskite lattice helps to inhibit the formation of yellow phase (δ‐phase) perovskite and thereby enhances the long‐term ambient stability. The enhanced stability is achieved by a strategy for the structural reconstruction of CsPbI₂Br perovskite by means of In³⁺ and Cl^? codoping, which gives rise to a significant improvement in the overall spatial symmetry with a closely packed atom arrangement due to the crystal structure transformation from orthorhombic (Pnma) to cubic (Pm‐3m). In addition, a novel thermal radiation heating method that further improves the uniformity of the perovskite thin films is presented. This approach enables the construction of all‐inorganic InCl₃:CsPbI₂Br PSCs with a champion power conversion efficiency of 13.74% for a small‐area device (0.09 cm²) and 11.4% for a large‐area device (1.00 cm²).     

High‐Efficiency CsPbI2Br Perovskite Solar Cells with Dopant‐Free Poly(3‐hexylthiophene) Hole Transporting Layers

CsPbI₂Br is emerging as a promising all‐inorganic material for perovskite solar cells (PSCs) due to its more stable lattice structure and moisture resistance compared to CsPbI₃, although its device performance is still much behind this counterpart. Herein, a preannealing process is developed and systematically investigated to achieve high‐quality CsPbI₂Br films by regulating the nucleation and crystallization of perovskite. The preannealing temperature and time are specifically optimized for a dopant‐free poly(3‐hexylthiophene) (P3HT)‐based device to target dopant‐induced drastic performance degradation for spiro‐OMeTAD‐based devices. The resulting P3HT‐based device exhibits comparable power conversion efficiency (PCE) to spiro‐OMeTAD‐based devices but much enhanced ambient stability with over 95% PCE after 1300 h. A diphenylamine derivative is introduced as a buffer layer to improve the energy‐level mismatch between CsPbI₂Br and P3HT. A record‐high PCE of 15.50% for dopant‐free P3HT‐based CsPbI₂Br PSCs is achieved by alleviating the open‐circuit voltage loss with the buffer layer. These results demonstrate that the preannealing processing together with a suitable buffer layer are applicable strategies for developing dopant‐free P3HT PSCs with high efficiency and stability.     

Perovskite Solar Cells on the Way to Their Radiative Efficiency Limit – Insights Into a Success Story of High Open‐Circuit Voltage and Low Recombination

Inorganic‐organic lead‐halide perovskite solar cells have reached efficiencies above 22% within a few years of research. Achieved photovoltages of >1.2 V are outstanding for a material with a bandgap of 1.6 eV – in particular considering that it is solution processed. Such values demand for low non‐radiative recombination rates and come along with high luminescence yields when the solar cell is operated as a light emitting diode. This progress report summarizes the developments on material composition and device architecture, which allowed for such high photovoltages. It critically assesses the term “lifetime”, the theories and experiments behind it, and the different recombination mechanisms present. It attempts to condense reported explanations for the extraordinary optoelectronic properties of the material. Amongst those are an outstanding defect tolerance due to antibonding valence states and the capability of bandgap tuning, which might make the dream of low‐cost highly efficient solution‐processed thin film solar cells come true. Beyond that, the presence of photon recycling will open new opportunities for photonic device design.     

Chlorinated Fullerene Dimers for Interfacial Engineering Toward Stable Planar Perovskite Solar Cells with 22.3% Efficiency

A major limit for planar perovskite solar cells is the trap‐mediated hysteresis and instability, due to the defective metal oxide interface with the perovskite layer. Passivation engineering with fullerenes has been identified as an effective approach to modify this interface. The rational design of fullerene molecules with exceptional electrical properties and versatile chemical moieties for targeted defect passivation is therefore highly demanded. In this work, novel fulleropyrrolidine (NMBF‐X, X?H or Cl) monomers and dimers are synthesized and incorporated between metal oxides (i.e. TiO₂, SnO₂) and perovskites (i.e. MAPbI₃ and (FAPbI₃)_x(MAPbBr₃)_1‐x). The fullerene dimers provide superior stability and efficiency improvements compared to the corresponding monomers, with chlorinated fullerene dimers being most effective at coordinating with both metal oxides and perovskite via the chlorine terminals. The non‐encapsulated planar device delivers a maximum power conversion efficiency of 22.3% without any hysteresis, while maintaining over 98% of initial efficiency after ambient storage for 1000 h, and exhibiting an order of magnitude improvement of the T₈₀ lifetime.     

Inorganic CsPbI3 Perovskite Coating on PbS Quantum Dot for Highly Efficient and Stable Infrared Light Converting Solar Cells

Solution‐processed colloidal quantum dot (CQD) solar cells harvesting the infrared part of the solar spectrum are especially interesting for future use in semitransparent windows or multilayer solar cells. To improve the device power conversion efficiency (PCE) and stability of the solar cells, surface passivation of the quantum dots is vital in the research of CQD solar cells. Herein, inorganic CsPbI₃ perovskite (CsPbI₃‐P) coating on PbS CQDs with a low‐temperature, solution‐processed approach is reported. The PbS CQD solar cell with CsPbI₃‐P coating gives a high PCE of 10.5% and exhibits remarkable stability both under long‐term constant illumination and storage under ambient conditions. Detailed characterization and analysis reveal improved passivation of the PbS CQDs with the CsPbI₃‐P coating, and the results suggest that the lattice coherence between CsPbI₃‐P and PbS results in epitaxial induced growth of the CsPbI₃‐P coating. The improved passivation significantly diminishes the sub‐bandgap trap‐state assisted recombination, leading to improved charge collection and therefore higher photovoltaic performance. This work therefore provides important insight to improve the CQD passivation by coating with an inorganic perovskite ligand for photovoltaics or other optoelectronic applications.     

Pb‐Reduced CsPb0.9Zn0.1I2Br Thin Films for Efficient Perovskite Solar Cells

Fabrication of efficient Pb reduced inorganic CsPbI₂Br perovskite solar cells (PSC) are an important part of environment‐friendly perovskite technology. In this work, 10% Pb reduction in CsPb_0.9Zn_0.1I₂Br promotes the efficiency of PSCs to 13.6% (AM1.5, 1sun), much higher than the 11.8% of the pure CsPbI₂Br solar cell. Zn²⁺ has stronger interaction with the anions to manipulate crystal growth, resulting in size‐enlarged crystallite with enhanced growth orientation. Moreover, the grain boundaries (GBs) are passivated by the Cs‐Zn‐I/Br compound. The high quality CsPb_0.9Zn_0.1I₂Br greatly diminishes the GB trap states and facilitates the charge transport. Furthermore, the Zn4s‐I5p states slightly reduce the energy bandgap, accounting for the wider solar spectrum absorption. Both the crystalline morphology and energy state change benefit the device performance. This work highlights a nontoxic and stable Pb reduction method to achieve efficient inorganic PSCs.     

Polymer Doping for High‐Efficiency Perovskite Solar Cells with Improved Moisture Stability

Each component layer in a perovskite solar cell plays an important role in the cell performance. Here, a few types of polymers including representative p‐type and n‐type semiconductors, and a classical insulator, are chosen to dope into a perovskite film. The long‐chain polymer helps to form a network among the perovskite crystalline grains, as witnessed by the improved film morphology and device stability. The dewetting process is greatly suppressed by the cross‐linking effect of the polymer chains, thereby resulting in uniform perovskite films with large grain sizes. Moreover, it is found that the polymer‐doped perovskite shows a reduced trap‐state density, likely due to the polymer effectively passivating the perovskite grain surface. Meanwhile the doped polymer formed a bridge between grains for efficient charge transport. Using this approach, the solar cell efficiency is improved from 17.43% to as high as 19.19%, with a much improved stability. As it is not required for the polymer to have a strict energy level matching with the perovskite, in principle, one may use a variety of polymers for this type of device design.     

Enhanced Efficiency and Stability of Perovskite Solar Cells Through Nd‐Doping of Mesostructured TiO2

Block‐copolymer templated chemical solution deposition is used to prepare mesoporous Nd‐doped TiO₂ electrodes for perovskite‐based solar cells. X‐ray diffraction and photothermal deflection spectroscopy show substitutional incorporation into the TiO₂ crystal lattice for low Nd concentration, and increasing interstitial doping for higher concentrations. Substitutional Nd‐doping leads to an increase in stability and performance of perovskite solar cells by eliminating defects and thus increasing electron transport and reducing charge recombination in the mesoporous TiO₂. The optimized doping concentration of 0.3% Nd enables the preparation of perovskite solar cells with stabilized power conversion efficiency of >18%.     

Spontaneous Interface Ion Exchange: Passivating Surface Defects of Perovskite Solar Cells with Enhanced Photovoltage

Interface engineering is of great concern in photovoltaic devices. For the solution‐processed perovskite solar cells, the modification of the bottom surface of the perovskite layer is a challenge due to solvent incompatibility. Herein, a Cl‐containing tin‐based electron transport layer; SnO_x‐Cl, is designed to realize an in situ, spontaneous ion‐exchange reaction at the interface of SnO_x‐Cl/MAPbI₃. The interfacial ion rearrangement not only effectively passivates the physical contact defects, but, at the same time, the diffusion of Cl ions in the perovskite film also causes longitudinal grain growth and further reduces the grain boundary density. As a result, an efficiency of 20.32% is achieved with an extremely high open‐circuit voltage of 1.19 V. This versatile design of the underlying carrier transport layer provides a new way to improve the performance of perovskite solar cells and other optoelectronic devices.     

Interface‐Modification‐Induced Gradient Energy Band for Highly Efficient CsPbIBr2 Perovskite Solar Cells

Inorganic cesium lead halide perovskite solar cells (PSCs) have received enormous attention due to their excellent stability compared with that of their organic–inorganic counterparts. However, the lack of optimization strategies leads the inorganic PSCs to suffer from low efficiency arising from significant recombination. To overcome this dilemma, a surface modification of the electron transport layer (ETL)/perovskite interface is undertaken by using SmBr₃ to improve the crystallization and morphology of the perovskite layer for enhanced ETL/perovskite interface interaction. Encouragingly, a gradient energy band is created at the interface with an outstanding hole blocking effect. As a result, both the charge recombination occurring at the interface and the nonradiative recombination inside the perovskite are suppressed, and, simultaneously, the charge extraction is improved successfully. Therefore, the power conversion efficiency of the CsPbIBr₂ PSCs is increased to as high as 10.88% under one sun illumination, which is 30% higher than its counterparts without the modification. It is logically inferred that this valuable optimization strategy can be extended to other analogous structures and materials.     

Defect Suppression in Oriented 2D Perovskite Solar Cells with Efficiency over 18% via Rerouting Crystallization Pathway

Vertically oriented 2D perovskites exhibit promising optoelectronic properties and intrinsic stability, but their photovoltaic application is still limited by the low power conversion efficiency (PCE) compared to 3D analogs. Here, a new crystallization pathway (RCP) is reported to suppress defects in vertically oriented 2D perovskite caused by its over-rapid self-assembly behavior. By controlling the specific adsorption of an ammonium halide additive on different perovskite crystal planes, the dynamic preferred growth of (111) plane is intentionally restrained, and the minority (202) planes emerge as secondary nucleation sites to stimulate the creation of large grains. As the halogen-regulated deprotonation of ammonium proceeds, the (111) crystal plane gradually recovers its growth dominance, and a vertically oriented 2D perovskite film finally forms with high homogeneity, reduced trap density of states, and desired carrier transport/collection kinetics. Solar cells using RCP-2D films show a highly reproducible and stable PCE reaching 18.5% with a high fill factor of 83.4%. These findings provide critical missing information on simultaneously achieving highly oriented and less defective 2D perovskite films for excellent device performance.     

Investigation of Quinquethiophene Derivatives with Different End Groups for High Open Circuit Voltage Solar Cells

Three quinquethiophene derivatives with different end groups of octyl 2‐cyanoacetate (DCAO5T), 3‐ethylrhodanine (DERHD5T) and 2H‐indene‐1,3‐dione (DIN5T) are synthesized in order to obtain higher open circuit voltage (V_oc) than their septithiophene analogs. The photovoltaic performance of these three molecules as donors and fullerene derivatives as the acceptors in bulk heterojunction solar cells are studied by using the simple solution spin‐coating fabrication process. Among them, DERHD5T shows V_oc as high as 1.08 volt and power conversion efficiency of 4.63% under AM 1.5G irradiation (100 mW cm^?2). The reasons for the high V_oc were investigated by the theoretical simulations and consistent results have been obtained in comparison with experimental measurements.     

Simultaneous Improved Performance and Thermal Stability of Planar Metal Ion Incorporated CsPbI2Br All‐Inorganic Perovskite Solar Cells Based on MgZnO Nanocrystalline Electron Transporting Layer

The high thermal stability and facile synthesis of CsPbI₂Br all‐inorganic perovskite solar cells (AI‐PSCs) have attracted tremendous attention. As far as electron‐transporting layers (ETLs) are concerned, low temperature processing and reduced interfacial recombination centers through tunable energy levels determine the feasibility of the perovskite devices. Although the TiO₂ is the most popular ETL used in PSCs, its processing temperature and moderate electron mobility hamper the performance and feasibility. Herein, the highly stable, low‐temperature processed MgZnO nanocrystal‐based ETLs for dynamic hot‐air processed Mn²⁺ incorporated CsPbI2Br AI‐PSCs are reported. By holding its regular planar “n–i–p” type device architecture, the MgZnO ETL and poly(3‐hexylthiophene‐2,5‐diyl) hole transporting layer, 15.52% power conversion efficiency (PCE) is demonstrated. The thermal‐stability analysis reveals that the conventional ZnO ETL‐based AI‐PSCs show a serious instability and poor efficiency than the Mg²⁺ modified MgZnO ETLs. The photovoltaic and stability analysis of this improved photovoltaic performance is attributed to the suitable wide‐bandgap, low ETL/perovskite interface recombination, and interface stability by Mg²⁺ doping. Interestingly, the thermal stability analysis of the unencapsulated AI‐PSCs maintains >95% of initial PCE more than 400 h at 85 °C for MgZnO ETL, revealing the suitability against thermal degradation than conventional ZnO ETL.