Spontaneously Self‐Assembly of a 2D/3D Heterostructure Enhances the Efficiency and Stability in Printed Perovskite Solar Cells

As perovskite solar cells (PSCs) are highly efficient, demonstration of high‐performance printed devices becomes important. 2D/3D heterostructures have recently emerged as an attractive way to relieving the film inhomogeneity and instability in perovskite devices. In this work, a 2D/3D ensemble with 2D perovskites self‐assembled atop 3D methylammonium lead triiodide (MAPbI₃) via a one‐step printing process is shown. A clean and flat interface is observed in the 2D/3D bilayer heterostructure for the first time. The 2D perovskite capping layer significantly suppresses nonradiative charge recombination, resulting in a marked increase in open‐circuit voltage (V_OC) of the devices by up to 100 mV. An ultrahigh V_OC of 1.20 V is achieved for MAPbI₃ PSCs, corresponding to 91% of the Shockley–Queisser limit. Moreover, notable enhancement in light, thermal, and moisture stability is obtained as a result of the protective barrier of the 2D perovskites. These results suggest a viable approach for scalable fabrication of highly efficient perovskite solar cells with enhanced environmental stability.     

Simultaneous Improvement of Photovoltaic Performance and Stability by In Situ Formation of 2D Perovskite at (FAPbI3)0.88(CsPbBr3)0.12/CuSCN Interface

To solve the stability issues of perovskite solar cells (PSC), here a novel interface engineering strategy that a versatile ultrathin 2D perovskite (5‐AVA)₂PbI₄ (5‐AVA = 5‐ammoniumvaleric acid) passivation layer that is in situ incorporated at the interface between (FAPbI₃)_0.88(CsPbBr₃)_0.12 and the hole transporting CuSCN is reported. Surface analysis using X‐ray photoelectron spectroscopy confirms the formation of 2D perovskite. Hysteresis is reduced by the interfacial 2D layer, which could be ascribed to improvement of interfacial charge extraction efficiency, associated with suppression of recombination. Moreover, introduction of the interface passivating layer enhances the moisture stability and photostability as compared to the control perovskite film due to hydrophobic nature of 2D perovskite. The unencapsulated device retains 98% of the initial power conversion efficiency (PCE) after 63 d under moisture exposure of about 10% in the dark. A PCE of the control device is boosted from 13.72 to 16.75% as a consequence of enhanced open‐circuit voltage (V_oc) and fill factor along with slightly increased short‐circuit current density (J_sc), which results from reduced trap states of (FAPbI₃)_0.88(CsPbBr₃)_0.12 as evidenced by enhanced carrier lifetimes and charge extraction. The perovskite/hole transport material interface engineering gives insight into simultaneous improvements of PCE and device stability.     

Record Open‐Circuit Voltage Wide‐Bandgap Perovskite Solar Cells Utilizing 2D/3D Perovskite Heterostructure

In this work, the authors realize stable and highly efficient wide‐bandgap perovskite solar cells that promise high power conversion efficiencies (PCE) and are likely to play a key role in next generation multi‐junction photovoltaics (PV). This work reports on wide‐bandgap (≈1.72 eV) perovskite solar cells exhibiting stable PCEs of up to 19.4% and a remarkably high open‐circuit voltage (V_OC) of 1.31 V. The V_OC‐to‐bandgap ratio is the highest reported for wide‐bandgap organic?inorganic hybrid perovskite solar cells and the V_OC also exceeds 90% of the theoretical maximum, defined by the Shockley–Queisser limit. This advance is based on creating a hybrid 2D/3D perovskite heterostructure. By spin coating n‐butylammonium bromide on the double‐cation perovskite absorber layer, a thin 2D Ruddlesden–Popper perovskite layer of intermediate phases is formed, which mitigates nonradiative recombination in the perovskite absorber layer. As a result, V_OC is enhanced by 80 mV.     

Thermodynamically Self‐Healing 1D–3D Hybrid Perovskite Solar Cells

Thermal degradation in perovskite solar cells is still an unsettled issue that limits its further development. In this study, 2‐(1H‐pyrazol‐1‐yl)pyridine is introduced into lead halide 3D perovskites, which allows 1D–3D hybrid perovskite materials to be obtained. The heterostructural 1D–3D perovskites are proved to be capable of remarkably prolonging the photoluminescence decay lifetime and suppressing charge carrier recombination in comparison to conventional 3D perovskites. The intrinsic properties of thermodynamically stable yet kinetically labile 1D materials allow the system to alleviate the lattice mismatch and passivate the interface traps of heterojunction region of 1D–3D hybrid perovskites that may occur during the crystal growth process. Importantly, the as‐fabricated 1D–3D perovskite solar cells display a thermodynamic self‐healing ability, which is induced through blocking the ion‐migration channels of A‐site ions by the flexible 1D perovskite with less densely close‐packed structure. Particularly, the power conversion efficiency of as‐fabricated unencapsulated 1D–3D perovskite solar cells is demonstrated to be reversible under temperature cycling (25–85 °C) at 55% relative humidity, which largely outperforms the pure 3D perovskite solar cell. The present study provides a facile approach to fabricate 1D–3D perovskite solar cells with high efficiency and long‐term stability.     

Highly Reproducible Sn‐Based Hybrid Perovskite Solar Cells with 9% Efficiency

The low power conversion efficiency (PCE) of tin‐based hybrid perovskite solar cells (HPSCs) is mainly attributed to the high background carrier density due to a high density of intrinsic defects such as Sn vacancies and oxidized species (Sn⁴⁺) that characterize Sn‐based HPSCs. Herein, this study reports on the successful reduction of the background carrier density by more than one order of magnitude by depositing near‐single‐crystalline formamidinium tin iodide (FASnI₃) films with the orthorhombic a‐axis in the out‐of‐plane direction. Using these highly crystalline films, obtained by mixing a very small amount (0.08 m ) of layered (2D) Sn perovskite with 0.92 m (3D) FASnI₃, for the first time a PCE as high as 9.0% in a planar p–i–n device structure is achieved. These devices display negligible hysteresis and light soaking, as they benefit from very low trap‐assisted recombination, low shunt losses, and more efficient charge collection. This represents a 50% improvement in PCE compared to the best reference cell based on a pure FASnI₃ film using SnF₂ as a reducing agent. Moreover, the 2D/3D‐based HPSCs show considerable improved stability due to the enhanced robustness of the perovskite film compared to the reference cell.     

Enhancing the Open‐Circuit Voltage of Perovskite Solar Cells by up to 120 mV Using π‐Extended Phosphoniumfluorene Electrolytes as Hole Blocking Layers

Four π‐extended phosphoniumfluorene electrolytes (π‐PFEs) are introduced as hole‐blocking layers (HBL) in inverted architecture planar perovskite solar cells with the structure of ITO/PEDOT:PSS/MAPbI₃/PCBM/HBL/Ag. The deep‐lying highest occupied molecular orbital energy level of the π‐PFEs effectively blocks holes, decreasing contact recombination. It is demonstrated that the incorporation of π‐PFEs introduces a dipole moment at the PCBM/Ag interface, resulting in significant enhancement of the built‐in potential of the device. This enhancement results in an increase in the open‐circuit voltage of the device by up to 120 mV, when compared to the commonly used bathocuproine HBL. The results are confirmed both experimentally and by numerical simulation. This work demonstrates that interfacial engineering of the transport layer/contact interface by small molecule electrolytes is a promising route to suppress nonradiative recombination in perovskite devices and compensates for a nonideal energetic alignment at the hole‐transport layer/perovskite interface.     

In Situ Tin(II) Complex Antisolvent Process Featuring Simultaneous Quasi‐Core–Shell Structure and Heterojunction for Improving Efficiency and Stability of Low‐Bandgap Perovskite Solar Cells

Unlike Pb‐based perovskites, it is still a challenge for realizing the targets of high performance and stability in mixed Pb–Sn perovskite solar cells owing to grain boundary traps and chemical changes in the perovskites. In this work, proposed is the approach of in‐situ tin(II) inorganic complex antisolvent process for specifically tuning the perovskite nucleation and crystal growth process. Interestingly, uniquely formed is the quasi‐core–shell structure of Pb–Sn perovskite–tin(II) complex as well as heterojunction perovskite structure at the same time for achieving the targets. The core–shell structure of Pb–Sn perovskite crystals covered by a tin(II) complex at the grain boundaries effectively passivates the trap states and suppresses the nonradiative recombination, leading to longer carrier lifetime. Equally important, the perovskite heterostructure is intentionally formed at the perovskite top region for enhancing the carrier extraction. As a result, the mixed Pb–Sn low‐bandgap perovskite device achieves a high power conversion efficiency up to 19.03% with fill factor over 0.8, which is among the highest fill factor in high‐performance Pb–Sn perovskite solar cells. Remarkably, the device fail time under continuous light illumination is extended by over 18.5‐folds from 30 to 560 h, benefitting from the protection of the quasi‐core–shell structure.     

Simultaneous Contact and Grain‐Boundary Passivation in Planar Perovskite Solar Cells Using SnO2‐KCl Composite Electron Transport Layer

The performance of perovskite solar cells is sensitive to detrimental defects, which are prone to accumulate at the interfaces and grain boundaries of bulk perovskite films. Defect passivation at each region will lead to reduced trap density and thus less nonradiative recombination loss. However, it is challenging to passivate defects at both the grain boundaries and the bottom charge transport layer/perovskite interface, mainly due to the solvent incompatibility and complexity in perovskite formation. Here SnO₂‐KCl composite electron transport layer (ETL) is utilized in planar perovskite solar cells to simultaneously passivate the defects at the ETL/perovskite interface and the grain boundaries of perovskite film. The K and Cl ions at the ETL/perovskite interface passivate the ETL/perovskite contact. Meanwhile, K ions from the ETL can diffuse through the perovskite film and passivate the grain boundaries. An enhancement of open‐circuit voltage from 1.077 to 1.137 V and a corresponding power conversion efficiency increasing from 20.2% to 22.2% are achieved for the devices using SnO₂‐KCl composite ETL. The composite ETL strategy reported herein provides an avenue for defect passivation to further increase the efficiency of perovskite solar cells.     

Spontaneous Interface Ion Exchange: Passivating Surface Defects of Perovskite Solar Cells with Enhanced Photovoltage

Interface engineering is of great concern in photovoltaic devices. For the solution‐processed perovskite solar cells, the modification of the bottom surface of the perovskite layer is a challenge due to solvent incompatibility. Herein, a Cl‐containing tin‐based electron transport layer; SnO_x‐Cl, is designed to realize an in situ, spontaneous ion‐exchange reaction at the interface of SnO_x‐Cl/MAPbI₃. The interfacial ion rearrangement not only effectively passivates the physical contact defects, but, at the same time, the diffusion of Cl ions in the perovskite film also causes longitudinal grain growth and further reduces the grain boundary density. As a result, an efficiency of 20.32% is achieved with an extremely high open‐circuit voltage of 1.19 V. This versatile design of the underlying carrier transport layer provides a new way to improve the performance of perovskite solar cells and other optoelectronic devices.     

Elucidating the Role of a Tetrafluoroborate‐Based Ionic Liquid at the n‐Type Oxide/Perovskite Interface

Halide perovskites are currently one of the most heavily researched emerging photovoltaic materials. Despite achieving remarkable power conversion efficiencies, perovskite solar cells have not yet achieved their full potential, with the interfaces between the perovskite and the charge‐selective layers being where most recombination losses occur. In this study, a fluorinated ionic liquid (IL) is employed to modify the perovskite/SnO₂ interface. Using Kelvin probe and photoelectron spectroscopy measurements, it is shown that depositing the perovskite onto an IL‐treated substrate results in the crystallization of a perovskite film which has a more n‐type character, evidenced by a decrease of the work function and a shift of the Fermi level toward the conduction band. Photoluminescence spectroscopy and time‐resolved microwave conductivity are used to investigate the optoelectronic properties of the perovskite grown on neat and IL‐modified surfaces and it is found that the modified substrate yields a perovskite film which exhibits an order of magnitude lower trap density than the control. When incorporated into solar cells, this interface modification results in a reduction in the current–voltage hysteresis and an improvement in device performance, with the best performing devices achieving steady‐state PCEs exceeding 20%.     

2‐Thiopheneformamidinium‐Based 2D Ruddlesden–Popper Perovskite Solar Cells with Efficiency of 16.72% and Negligible Hysteresis

Formamidinium (FA)‐based 3D perovskite solar cells (PSCs) have been widely studied and they show reduced bandgap, enhanced stability, and improved efficiency compared to MAPbI₃‐based devices. Nevertheless, the FA‐based spacers have rarely been studied for 2D Ruddlesden–Popper (RP) perovskites, which have drawn wide attention due to their enormous potential for fabricating efficient and stable photovoltaic devices. Here, for the first time, FA‐based derivative, 2‐thiopheneformamidinium (ThFA), is successfully synthesized and employed as an organic spacer for 2D RP PSCs. A precursor organic salts‐assisted crystal growth technique is further developed to prepare high quality 2D (ThFA)₂(MA)_n?1Pb_nI_3n+1 (nominal n = 3) perovskite films, which shows preferential vertical growth orientations, high charge carrier mobilities, and reduced trap density. As a result, the 2D RP PSCs with an inverted planar p‐i‐n structure exhibit a dramatically improved power conversion efficiency (PCE) from 7.23% to 16.72% with negligible hysteresis, which is among the highest PCE in 2D RP PSCs with low nominal n‐value of 3. Importantly, the optimized 2D PSCs exhibit a dramatically improved stability with less than 1% degradation after storage in N₂ for 3000 h without encapsulation. These findings provide an effective strategy for developing FA‐based organic spacers toward highly efficient and stable 2D PSCs.     

Alkali Chlorides for the Suppression of the Interfacial Recombination in Inverted Planar Perovskite Solar Cells

In this work, significant suppression of the interfacial recombination by facile alkali chloride interface modification of the NiOx hole transport layer in inverted planar perovskite solar cells is achieved. Experimental and theoretical results reveal that the alkali chloride interface modification results in improved ordering of the perovskite films, which in turn reduces defect/trap density, causing reduced interfacial recombination. This leads to a significant improvement in the open‐circuit voltage from 1.07 eV for pristine NiOx to 1.15 eV for KCl‐treated NiOx, resulting in a power conversion efficiency approaching 21%. Furthermore, the suppression of the ion diffusion in the devices is observed, as evidenced by stable photoluminescence (PL) under illumination and high PL quantum efficiency with alkali chloride treatment, as opposed to the luminescence enhancement and low PL quantum efficiency observed for perovskite on pristine NiOx. The suppressed ion diffusion is also consistent with improved stability of the devices with KCl‐treated NiOx. Thus, it is demonstrated that a simple interfacial modification is an effective method to not only suppress interfacial recombination but also to suppress ion migration in the layers deposited on the modified interface due to improved interface ordering and reduced defect density.     

Self‐Assembly Atomic Stacking Transport Layer of 2D Layered Titania for Perovskite Solar Cells with Extended UV Stability

A novel atomic stacking transporting layer (ASTL) based on 2D atomic sheets of titania (Ti_1?δO₂) is demonstrated in organic–inorganic lead halide perovskite solar cells. The atomically thin ASTL of 2D titania, which is fabricated using a solution‐processed self‐assembly atomic layer‐by‐layer deposition technique, exhibits the unique features of high UV transparency and negligible (or very low) oxygen vacancies, making it a promising electron transporting material in the development of stable and high‐performance perovskite solar cells. In particular, the solution‐processable atomically thin ASTL of 2D titania atomic sheets shows superior inhibition of UV degradation of perovskite solar cell devices, compared to the conventional high‐temperature sintered TiO₂ counterpart, which usually causes the notorious instability of devices under UV irradiation. The discovery opens up a new dimension to utilize the 2D layered materials with a great variety of homostructrual or heterostructural atomic stacking architectures to be integrated with the fabrication of large‐area photovoltaic or optoelectronic devices based on the solution processes.     

Highly Efficient and Stable Solar Cells with 2D MA3Bi2I9/3D MAPbI3 Heterostructured Perovskites

Organic–inorganic hybrid lead halide perovskites are emerging as highly promising candidates for highly efficient thin film photovoltaics due to their excellent optoelectronic properties and low‐temperature process capability. However, the long‐term stability in ambient air still is a key issue limiting their further practical applications. Herein, the enhancement of both performance and stability of perovskite solar cells is reported by employing 2D and 3D heterostructured perovskite films with unique nanoplate/nanocrystalline morphology. The 2D/3D heterostructured perovskites combine advantages of the high‐performance lead‐based perovskite 3D CH₃NH₃PbI₃ (MAPbI₃) and the air‐stable bismuth‐based quasi‐perovskite 2D MA₃Bi₂I₉. In the 2D/3D heterostructure, the hydrophobic MA₃Bi₂I₉ platelets vertically situate between the MAPbI₃ grains, forming a lattice‐like structure to tightly enclose the 3D MAPbI₃ perovskite grains. The solar cell based on the optimal 2D/3D (9.2%) heterostructured film achieves a high efficiency of 18.97%, with remarkably reduced hysteresis and significantly improved stability. The work demonstrates that construction of 2D/3D heterostructured films by hybridizing different species of perovskite materials is a feasible way to simultaneously enhance both efficiency and stability of perovskite solar cells.     

High‐Performance Perovskite Solar Cells with Enhanced Environmental Stability Based on a (p‐FC6H4C2H4NH3)2[PbI4] Capping Layer

Supported by the density functional theory (DFT) calculations, for the first time, a fluorinated aromatic cation, 2‐(4‐fluorophenyl)ethyl ammonium iodide (FPEAI), is introduced to grow in situ a low dimensional perovskite layer atop 3D perovskite film with excess PbI₂. The resulted (p‐FC₆H₄C₂H₄NH₃)₂[PbI₄] perovskite functions as a protective capping layer to protect the 3D perovskite from moisture. In the meantime, the thin layer facilitates charge transfer at the interfaces, thereby reducing the nonradiative recombination pathways. Laser scanning confocal microscopy unveils visually the distribution of the 2D perovskite layer on top of the 3D perovskite. When employing the 3D–2D perovskite as the absorbing layer in the photovoltaic cells, a high power conversion efficiency of 20.54% is realized. Superior device performance and moisture stability are observed with the modified perovskite over the whole stability test period.     

Efficient Defect Passivation for Perovskite Solar Cells by Controlling the Electron Density Distribution of Donor‐π‐Acceptor Molecules

Organic–inorganic hybrid perovskite solar cells (PSCs) are a promising photovoltaic technology that has rapidly developed in recent years. Nevertheless, a large number of ionic defects within perovskite absorber can serve as non‐radiative recombination center to limit the performance of PSCs. Here, organic donor‐π‐acceptor (D‐π‐A) molecules with different electron density distributions are employed to efficiently passivate the defects in the perovskite films. The X‐ray photoelectron spectroscopy (XPS) analysis shows that the strong electron donating N,N‐dibutylaminophenyl unit in a molecule causes an increase in the electron density of the passivation site that is a carboxylate group, resulting in better binding with the defects of under‐coordinated Pb²⁺ cations. Carrier lifetime in the perovskite films measured by the time‐resolved photoluminescence spectrum is also prolonged by an increase in donation ability of the D‐π‐A molecules. As a consequence, these benefits contribute to an increase of 80 mV in the open circuit voltage of the devices, enabling a maximum power conversion efficiency (PCE) of 20.43%, in comparison with PCE of 18.52% for the control device. The authors' findings provide a novel strategy for efficient defect passivation in the perovskite solar cells based on controlling the electronic configuration of passivation molecules.     

Localized Traps Limited Recombination in Lead Bromide Perovskites

Traps exert an omnipotent influence over the performance of halide perovskite optoelectronic devices. A clear understanding of the origin and nature of the traps in halide perovskites is the key to controlling them and realizing optimal devices. Herein, the role of localized traps on the optical properties of lead bromide perovskite films is investigated. In the low‐temperature orthorhombic phase of CH₃NH₃PbBr₃ perovskite, band‐edge carrier dynamics exhibit a power‐law decay due to the presence of structural‐disorder‐induced localized traps, which has a depth of ≈40 meV. The continuous distribution of these localized traps gives rise to a broad sub‐band‐gap emission that becomes more prominent in thicker films with a larger trap density. The presence of this emission only from the hybrid organic–inorganic perovskites points to the vital role of organic dipoles in localized trap states formation. This study explicates the nature of these localized traps as well as their nontrivial role in carrier recombination kinetics, which is of fundamental importance in perovskites optoelectronics.     

Diffraction‐Grated Perovskite Induced Highly Efficient Solar Cells through Nanophotonic Light Trapping

Achieving light harvesting is crucial for the efficiency of the solar cell. Constructing optical structures often can benefit from micro‐nanophotonic imprinting. Here, a simple and facile strategy is developed to introduce a large area grating structure into the perovskite‐active layer of a solar cell by utilizing commercial optical discs (CD‐R and DVD‐R) and achieve high photovoltaic performance. The constructed diffraction grating on the perovskite active layer realizes nanophotonic light trapping by diffraction and effectively suppresses carrier recombination. Compared to the pristine perovskite solar cells (PSCs), the diffraction‐grating perovskite devices with DVD obtain higher power conversion efficiency and photocurrent density, which are improved from 16.71% and 21.67 mA cm^?2 to 19.71% and 23.11 mA cm^?2. Moreover, the stability of the PSCs with diffraction‐grating‐structured perovskite active layer is greatly enhanced. The method can boost photonics merge into the remarkable perovskite materials for various applications.     

Graded Bandgap Perovskite with Intrinsic n–p Homojunction Expands Photon Harvesting Range and Enables All Transport Layer‐Free Perovskite Solar Cells

Organic–inorganic halide perovskites are promising materials for next‐generation photovoltaic device due to their attractive photoelectrical properties such as strong light absorption, high carrier mobility, and tunable bandgap. Generally, perovskite solar cells require carrier transport layers (CTL) to provide a built‐in electric field and reduce the recombination rate. However, the construction of suitable electron‐ and hole‐transport layers is not cost effective, impairing the commercial application of the devices. An n–p perovskite homojunction absorber with a graded bandgap is developed by introducing a three‐step dynamic spin‐coating strategy and variable valence Sn elements. The bandgap of the perovskite absorber is gradually manipulated from 1.53 eV (the bottom) to 1.27 eV (the top). The electronic behavior is also transformed from n‐type (excess PbI₂, the bottom) to p‐type (Sn vacancy, the top) in a very short distance (50 nm). This designed perovskite homojunction electronic structure not only expands the light harvesting range from 800 to 970 nm which provides potential to break the PCE limits, but also promotes oriented carrier transportation and weakens the dependence on CTL. The demonstrated asymmetrical active layer shows a brand‐new approach to simplify the device structure and boost the performance of CTL‐free perovskite solar cells.     

Dimensional Engineering of a Graded 3D–2D Halide Perovskite Interface Enables Ultrahigh Voc Enhanced Stability in the p‐i‐n Photovoltaics

2D halide perovskite materials have shown great advantages in terms of stability when applied in a photovoltaic device. However, the impediment of charge transport within the layered structure drags down the device performance. Here for the first time, a 3D–2D (MAPbI₃‐PEA₂Pb₂I₄) graded perovskite interface is demonstrated with synergistic advantages. In addition to the significantly improved ambient stability, this graded combination modifies the interface energy level in such a way that reduces interface charge recombination, leading to an ultrahigh V _oc at 1.17 V, a record for NiO‐based p‐i‐n photovoltaic devices. Moreover, benefiting from the graded structure induced continuously upshifts energy level, the photovoltaic device attains a high J _sc of 21.80 mA cm^?2 and a high fill factor of 0.78, resulting in an overall power conversion efficiency (PCE) of 19.89%. More importantly, it is showed that such a graded interface structure also suppresses ion migration in the device, accounting for its significantly enhanced thermal stability.