Carrier Interfacial Engineering by Bismuth Modification for Efficient and Thermoresistant Perovskite Solar Cells

Organic–inorganic halide perovskite solar cells (PSCs) have emerged as attractive alternatives to conventional solar cells. It is still a challenge to obtain PSCs with good thermal stability and high permanence, especially at extreme outdoor temperatures. This work systematically studies the effects of Bi³⁺ modification on structural, electrical, and optical properties of perovskite films (FA_0.83MA_0.17Pb(I_0.83Br_0.17)₃) and the performance of corresponding PSCs. The results indicate that Bi³⁺ modified PSCs can achieve better thermal stability, photovoltaic response, and reproducibility compared with control cells due to the decreased grain boundaries, enhanced crystallization, and improved electron extraction from perovskite film. As a result, the modified PSC exhibits an optimized power conversion efficiency (PCE) of 19.4% compared with 18.3% for the optimized control device, accompanied by better thermoresistant ability under 100–180 °C and enhanced long‐term stability. The degradation rate of the modified device is reduced by an order of magnitude due to effective structural defect modification in perovskite photoactive layer. It could maintain more than two months at 60 °C. These results shed light on the origin of crystallization and thermal stability of perovskite films, and provide an approach to solve thermal stability issue of PSCs.     

High‐Efficiency CsPbI2Br Perovskite Solar Cells with Dopant‐Free Poly(3‐hexylthiophene) Hole Transporting Layers

CsPbI₂Br is emerging as a promising all‐inorganic material for perovskite solar cells (PSCs) due to its more stable lattice structure and moisture resistance compared to CsPbI₃, although its device performance is still much behind this counterpart. Herein, a preannealing process is developed and systematically investigated to achieve high‐quality CsPbI₂Br films by regulating the nucleation and crystallization of perovskite. The preannealing temperature and time are specifically optimized for a dopant‐free poly(3‐hexylthiophene) (P3HT)‐based device to target dopant‐induced drastic performance degradation for spiro‐OMeTAD‐based devices. The resulting P3HT‐based device exhibits comparable power conversion efficiency (PCE) to spiro‐OMeTAD‐based devices but much enhanced ambient stability with over 95% PCE after 1300 h. A diphenylamine derivative is introduced as a buffer layer to improve the energy‐level mismatch between CsPbI₂Br and P3HT. A record‐high PCE of 15.50% for dopant‐free P3HT‐based CsPbI₂Br PSCs is achieved by alleviating the open‐circuit voltage loss with the buffer layer. These results demonstrate that the preannealing processing together with a suitable buffer layer are applicable strategies for developing dopant‐free P3HT PSCs with high efficiency and stability.     

Controllable Perovskite Crystallization via Antisolvent Technique Using Chloride Additives for Highly Efficient Planar Perovskite Solar Cells

The presence of surface and grain boundary defects in organic–inorganic halide perovskite films can be detrimental to both the performance and operational stability of perovskite solar cells (PSCs). Here, the effect of chloride additives is studied on the bulk and surface defects of the mixed cation and halide PSCs. It is found that using an antisolvent technique, the perovskite film is divided into two layers, i.e., a bottom layer with large grains and a thin capping layer with small grains. The addition of formamidinium chloride (FACl) into the precursor solution removes the small‐grained perovskite capping layer and suppresses the formation of bulk and surface defects, providing a perovskite film with enhanced crystallinity and large grain size of over 1 µm. Time‐resolved photoluminescence measurements show longer lifetimes for perovskite films modified by FACl and subsequently passivated by 1‐adamantylamine hydrochloride as compared to the reference sample. Impedance spectroscopy measurements show that these treatments reduce the recombination in the PSCs, leading to a champion device with power conversion efficiency (PCE) of 21.2%, an open circuit voltage of 1152 mV and negligible hysteresis. The Cl treated PSC also shows improved operational stability with only 12% PCE loss after 700 h under continuous illumination.     

Interface Modification by Ionic Liquid: A Promising Candidate for Indoor Light Harvesting and Stability Improvement of Planar Perovskite Solar Cells

Organic–inorganic hybrid perovskite solar cells (PSCs) are currently attracting significant interest owing to their promising outdoor performance. However, the ability of indoor light harvesting of the perovskites and corresponding device performance are rarely reported. Here, the potential of planar PSCs in harvesting indoor light for low‐power consumption devices is investigated. Ionic liquid of 1‐butyl‐3‐methylimidazolium tetrafluoroborate ([BMIM]BF₄) is employed as a modification layer of [6,6]‐phenyl‐C61‐butyric acid methyl ester) (PCBM) in the inverted PSCs. The incorporation of [BMIM]BF₄ not only paves the interface contact between PCBM and electrode, but also facilitates the electron transport and extraction owing to the efficient passivation of the surface trap states. Moreover, [BMIM]BF₄ with excellent thermal stability can act as a protective layer by preventing the erosion of moisture and oxygen into the perovskite layer. The resulting devices present a record indoor power conversion efficiency (PCE) of 35.20% under fluorescent lamps of 1000 lux, and an impressive PCE of 19.30% under 1 sun illumination. The finding in this work verifies the excellent indoor performance of PSCs to meet the requirements of eco‐friendly economy.     

Synergistic Crystal and Interface Engineering for Efficient and Stable Perovskite Photovoltaics

The presence of bulk and surface defects in perovskite light harvesting materials limits the overall efficiency of perovskite solar cells (PSCs). The formation of such defects is suppressed by adding methylammonium chloride (MACl) as a crystallization aid to the precursor solution to realize high‐quality, large‐grain triple A‐cation perovskite films and that are combined with judicious engineering of the perovskite interface with the electron and hole selective contact materials. A planar SnO₂/TiO₂ double layer oxide is introduced to ascertain fast electron extraction and the surface of the perovskite facing the hole conductor is treated with iodine dissolved in isopropanol to passivate surface trap states resulting in a retardation of radiationless carrier recombination. A maximum solar to electric power conversion efficiency (PCE) of 21.65% and open circuit photovoltage (V_oc) of ≈1.24 V with only ≈370 mV loss in potential with respect to the band gap are achieved, by applying these modifications. Additionally, the defect healing enhances the operational stability of the devices that retain 96%, 90%, and 85% of their initial PCE values after 500 h under continuously light illumination at 20, 50, and 65 °C, respectively, demonstrating one of the most stable planar PSCs reported so far.     

Heterojunction‐Depleted Lead‐Free Perovskite Solar Cells with Coarse‐Grained B‐γ‐CsSnI3 Thin Films

Perovskite solar cells (PSCs) have been emerging as a breakthrough photovoltaic technology, holding unprecedented promise for low‐cost, high‐efficiency renewable electricity generation. However, potential toxicity associated with the state‐of‐the‐art lead‐containing PSCs has become a major concern. The past research in the development of lead‐free PSCs has met with mixed success. Herein, the promise of coarse‐grained B‐γ‐CsSnI₃ perovskite thin films as light absorber for efficient lead‐free PSCs is demonstrated. Thermally‐driven solid‐state coarsening of B‐γ‐CsSnI₃ perovskite grains employed here is accompanied by an increase of tin‐vacancy concentration in their crystal structure, as supported by first‐principles calculations. The optimal device architecture for the efficient photovoltaic operation of these B‐γ‐CsSnI₃ thin films is identified through exploration of several device architectures. Via modulation of the B‐γ‐CsSnI₃ grain coarsening, together with the use of the optimal PSC architecture, planar heterojunction‐depleted B‐γ‐CsSnI₃ PSCs with power conversion efficiency up to 3.31% are achieved without the use of any additives. The demonstrated strategies provide guidelines and prospects for developing future high‐performance lead‐free PVs.     

High‐Performance Flexible Perovskite Solar Cells via Precise Control of Electron Transport Layer

Flexible perovskite solar cells (f‐PSCs) have attracted great attention due to their promising commercial prospects. However, the performance of f‐PSCs is generally worse than that of their rigid counterparts. Herein, it is found that the unsatisfactory performance of planar heterojunction (PHJ) f‐PSCs can be attributed to the undesirable morphology of electron transport layer (ETL), which results from the rough surface of the flexible substrate. Precise control over the thickness and morphology of ETL tin dioxide (SnO₂) not only reduces the reflectance of the indium tin oxide (ITO) on polyethylene 2,6‐naphthalate (PEN) substrate and enhances photon collection, but also decreases the trap‐state densities of perovskite films and the charge transfer resistance, leading to a great enhancement of device performance. Consequently, the f‐PSCs, with a structure of PEN/ITO/SnO₂/perovskite/Spiro‐OMeTAD/Ag, exhibit a power conversion efficiency (PCE) up to 19.51% and a steady output of 19.01%. Furthermore, the f‐PSCs show a robust bending resistance and maintain about 95% of initial PCE after 6000 bending cycles at a bending radius of 8 mm, and they present an outstanding long‐term stability and retain about 90% of the initial performance after >1000 h storage in air (10% relative humidity) without encapsulation.     

Simultaneous Improvement of Photovoltaic Performance and Stability by In Situ Formation of 2D Perovskite at (FAPbI3)0.88(CsPbBr3)0.12/CuSCN Interface

To solve the stability issues of perovskite solar cells (PSC), here a novel interface engineering strategy that a versatile ultrathin 2D perovskite (5‐AVA)₂PbI₄ (5‐AVA = 5‐ammoniumvaleric acid) passivation layer that is in situ incorporated at the interface between (FAPbI₃)_0.88(CsPbBr₃)_0.12 and the hole transporting CuSCN is reported. Surface analysis using X‐ray photoelectron spectroscopy confirms the formation of 2D perovskite. Hysteresis is reduced by the interfacial 2D layer, which could be ascribed to improvement of interfacial charge extraction efficiency, associated with suppression of recombination. Moreover, introduction of the interface passivating layer enhances the moisture stability and photostability as compared to the control perovskite film due to hydrophobic nature of 2D perovskite. The unencapsulated device retains 98% of the initial power conversion efficiency (PCE) after 63 d under moisture exposure of about 10% in the dark. A PCE of the control device is boosted from 13.72 to 16.75% as a consequence of enhanced open‐circuit voltage (V_oc) and fill factor along with slightly increased short‐circuit current density (J_sc), which results from reduced trap states of (FAPbI₃)_0.88(CsPbBr₃)_0.12 as evidenced by enhanced carrier lifetimes and charge extraction. The perovskite/hole transport material interface engineering gives insight into simultaneous improvements of PCE and device stability.     

Long‐Lasting Nanophosphors Applied to UV‐Resistant and Energy Storage Perovskite Solar Cells

Recently, considerable progress is achieved in lab prototype perovskite solar cells (PSCs); however, the stability of outdoor applications of PSCs remains a challenge due to the high sensitivity of perovskite material under moist and ultraviolet (UV) light conditions. In this work, the UV photostability of PSC devices is improved by incorporating a photon downshifting layer—SrAl₂O₄: Eu²⁺, Dy³⁺ (SAED)—prepared using the pulsed laser deposition approach. Light‐induced deep trap states in the photoactive layer are depressed, and UV light‐induced device degradation is inhibited after the SAED modification. Optimized power conversion efficiency (PCE) of 17.8% is obtained through the enhanced light harvesting and reduced carrier recombination provided by SAED. More importantly, a solar energy storage effect due to the long‐persistent luminescence of SAED is obtained after light illumination is turned off. The introduction of downconverting material with long‐persistent luminescence in PSCs not only represents a new strategy to improve PCE and light stability by photoconversion from UV to visible light but also provides a new paradigm for solar energy storage.     

Surface Engineering of TiO2 ETL for Highly Efficient and Hysteresis‐Less Planar Perovskite Solar Cell (21.4%) with Enhanced Open‐Circuit Voltage and Stability

Interfacial studies and band alignment engineering on the electron transport layer (ETL) play a key role for fabrication of high‐performance perovskite solar cells (PSCs). Here, an amorphous layer of SnO₂ (a‐SnO₂) between the TiO₂ ETL and the perovskite absorber is inserted and the charge transport properties of the device are studied. The double‐layer structure of TiO₂ compact layer (c‐TiO₂) and a‐SnO₂ ETL leads to modification of interface energetics, resulting in improved charge collection and decreased carrier recombination in PSCs. The optimized device based on a‐SnO₂/c‐TiO₂ ETL shows a maximum power conversion efficiency (PCE) of 21.4% as compared to 19.33% for c‐TiO₂ based device. Moreover, the modified device demonstrates a maximum open‐circuit voltage (V_oc) of 1.223 V with 387 mV loss in potential, which is among the highest reported value for PSCs with negligible hysteresis. The stability results show that the device on c‐TiO₂/a‐SnO₂ retains about 91% of its initial PCE value after 500 h light illumination, which is higher than pure c‐TiO₂ (67%) based devices. Interestingly, using a‐SnO₂/c‐TiO₂ ETL the PCE loss was only 10% of initial value under continuous UV light illumination after 30 h, which is higher than that of c‐TiO₂ based device (28% PCE loss).     

Efficient Passivation with Lead Pyridine‐2‐Carboxylic for High‐Performance and Stable Perovskite Solar Cells

Stability has become the main obstacle for the commercialization of perovskite solar cells (PSCs) despite the impressive power conversion efficiency (PCE). Poor crystallization and ion migration of perovskite are the major origins of its degradation under working condition. Here, high‐performance PSCs incorporated with pyridine‐2‐carboxylic lead salt (PbPyA₂) are fabricated. The pyridine and carboxyl groups on PbPyA₂ can not only control crystallization but also passivate grain boundaries (GBs), which result in the high‐quality perovskite film with larger grains and fewer defects. In addition, the strong interaction among the hydrophobic PbPyA₂ molecules and perovskite GBs acts as barriers to ion migration and component volatilization when exposed to external stresses. Consequently, superior optoelectronic perovskite films with improved thermal and moisture stability are obtained. The resulting device shows a champion efficiency of 19.96% with negligible hysteresis. Furthermore, thermal (90 °C) and moisture (RH 40–60%) stability are improved threefold, maintaining 80% of initial efficiency after aging for 480 h. More importantly, the doped device exhibits extraordinary improvement of operational stability and remains 93% of initial efficiency under maximum power point (MPP) tracking for 540 h.     

3D–2D–0D Interface Profiling for Record Efficiency All‐Inorganic CsPbBrI2 Perovskite Solar Cells with Superior Stability

All‐inorganic CsPbBrI₂ perovskite has great advantages in terms of ambient phase stability and suitable band gap (1.91 eV) for photovoltaic applications. However, the typically used structure causes reduced device performance, primarily due to the large recombination at the interface between the perovskite, and the hole‐extraction layer (HEL). In this paper, an efficient CsPbBrI₂ perovskite solar cell (PSC) with a dimensionally graded heterojunction is reported, in which the CsPbBrI₂ material is distributed within bulk–nanosheet–quantum dots or 3D–2D–0D dimension‐profiled interface structure so that the energy alignment is optimized in between the valence and conduction bands of both CsPbBrI₂ and the HEL layers. Specifically, the valence‐/conduction‐band edge is leveraged to bend with synergistic advantages: the graded combination enhances the hole extraction and conduction efficiency with effectively decreased recombination loss during the hole‐transfer process, leading to an enhanced built‐in electric field, hence a high V_OC of as much as 1.19 V. The profiled structure induces continuously upshifted energy levels, resulting in a higher J_SC of as much as 12.93 mA cm^?2 and fill factor as high as 80.5%, and therefore record power conversion efficiency (PCE) of 12.39%. As far as it is known, this is the highest PCE for CsPbBrI₂ perovskite‐based PSC.     

Halogen Engineering for Operationally Stable Perovskite Solar Cells via Sequential Deposition

The performance of perovskite solar cells (PSCs) relies on the synthesis method and chemical composition of the perovskite materials. So far, PSCs that have adopted two‐step sequential deposited perovskite with the state‐of‐art composition (FAPbI₃)_1?x(MAPbBr₃)_x (x < 0.05) have achieved record power conversion efficiency (PCE), while their one‐step antisolvent dripping counterparts with typical composition Cs_0.05FA_0.81MA_0.14Pb(I_0.85Br_0.15)₃ with more bromine have exhibited much better long‐term operational stability. Thus, halogen engineering that aims to elevate bromine content in sequential deposited perovskite film would push operational stability of PSCs toward that of antisolvent dripping deposited perovskite materials. Here, a Br‐rich seeding growth method is devised and perovskite seed solution with high bromine content is introduced into a PbI₂ precursor, leading to bromine incorporation in the resulting perovskite film. Photovoltaic devices fabricated by Br‐rich seeding growth method exhibit a PCE of 21.5%, similar to 21.6% for PSCs having lower bromine content. Whereas, the operational stability of PSCs with higher bromine content is significantly enhanced, with over 80% of initial PCE retained after 500 h tracking at maximum power point under 1‐sun illumination. This work highlights the vital importance of halogen composition for the operational stability of PSCs, and introduces an effective way to incorporate bromine into mixed‐cation‐halide perovskite film via sequential deposition method.     

Lewis‐Adduct Mediated Grain‐Boundary Functionalization for Efficient Ideal‐Bandgap Perovskite Solar Cells with Superior Stability

State‐of‐the‐art perovskite solar cells (PSCs) have bandgaps that are invariably larger than 1.45 eV, which limits their theoretically attainable power conversion efficiency. The emergent mixed‐(Pb, Sn) perovskites with bandgaps of 1.2–1.3 eV are ideal for single‐junction solar cells according to the Shockley–Queisser limit, and they have the potential to deliver higher efficiency. Nevertheless, the high chemical activity of Sn(II) in these perovskites makes it extremely challenging to control their physical properties and chemical stability, thereby leading to PSCs with relatively low PCE and stability. In this work, the authors employ the Lewis‐adduct SnF₂·3FACl additive in the solution‐processing of ideal‐bandgap halide perovskites (IBHPs), and prepare uniform large‐grain perovskite thin films containing continuously functionalized grain boundaries with the stable SnF₂ phase. Such Sn(II)‐rich grain‐boundary networks significantly enhance the physical properties and chemical stability of the IBHP thin films. Based on this approach, PSCs with an ideal bandgap of 1.3 eV are fabricated with a promising efficiency of 15.8%, as well as enhanced stability. The concept of Lewis‐adduct‐mediated grain‐boundary functionalization in IBHPs presented here points to a new chemical route for approaching the Shockley–Queisser limit in future stable PSCs.     

In Situ Formation of MoO3 in PEDOT:PSS Matrix: A Facile Way to Produce a Smooth and Less Hygroscopic Hole Transport Layer for Highly Stable Polymer Bulk Heterojunction Solar Cells

A solution‐processed neutral hole transport layer is developed by in situ formation of MoO₃ in aqueous PEDOT:PSS dispersion (MoO₃‐PEDOT:PSS). This MoO₃‐PEDOT:PSS composite film takes advantage of both the highly conductive PEDOT:PSS and the ambient conditions stability of MoO₃; consequently it possesses a smooth surface and considerably reduced hygroscopicity. The resulting bulk heterojunction polymer solar cells (BHJ PSC) based on poly[2,3‐bis‐(3‐octyloxyphenyl)quinoxaline‐5,8‐diyl‐alt‐thiophene‐2,5‐diyl] (TQ1):[6,6]‐phenyl‐C₇₁‐butyric acid methyl ester (PC₇₀BM) blends using MoO₃‐PEDOT:PSS composite film as hole transport layer (HTL) show considerable improvement in power conversion efficiency (PCE), from 5.5% to 6.4%, compared with the reference pristine PEDOT:PSS‐based device. More importantly, the device with MoO₃‐PEDOT:PSS HTL shows considerably improved stability, with the PCE remaining at 80% of its original value when stored in ambient air in the dark for 10 days. In comparison, the reference solar cell with PEDOT:PSS layer shows complete failure within 10 days. This MoO₃‐PEDOT:PSS implies the potential for low‐cost roll‐to‐roll fabrication of high‐efficiency polymer solar cells with long‐term stability at ambient conditions.     

Solvent Engineering Boosts the Efficiency of Paintable Carbon‐Based Perovskite Solar Cells to Beyond 14%

Carbon‐based hole transport material (HTM)‐free perovskite solar cells (PSCs) have shown much promise for practical applications because of their high stability and low cost. However, the efficiencies of this kind of PSCs are still relatively low, especially for the simplest paintable carbon‐based PSCs, in comparison with the organic HTM‐based PSCs. This can be imputed to the perovskite deposition methods that are not very suitable for this kind of devices. A solvent engineering strategy based on two‐step sequential method is exploited to prepare a high‐quality perovskite layer for the paintable carbon‐based PSCs in which the solvent for CH₃NH₃I (MAI) solution at the second step is changed from isopropanol (IPA) to a mixed solvent of IPA/Cyclohexane (CYHEX). This mixed solvent not only accelerates the conversion of PbI₂ to CH₃NH₃PbI₃ but also suppresses the Ostwald ripening process resulting in a high‐quality perovskite layer, e.g., pure phase, even surface, and compact capping layer. The paintable carbon‐based PSCs fabricated from IPA/CYHEX solvent exhibits a considerable enhancement in photovoltaic performance and performance reproducibility in comparison with that from pure IPA, especially on fill factor (FF), owing mainly to the better contact of perovskite/carbon interface, lower trap density in perovskite, higher light absorption ability, and faster charge transport of perovskite layer. As a result, the highest power conversion efficiency (PCE) of 14.38% is obtained, which is a record value for carbon‐based HTM‐free PSCs. Furthermore, a PCE of as high as 10% is achieved for the large area device (1 cm²), also the highest of its kind.     

High‐Efficiency Polymer Solar Cells Achieved by Doping Plasmonic Metallic Nanoparticles into Dual Charge Selecting Interfacial Layers to Enhance Light Trapping

Significantly increased power conversion efficiency (PCE) of polymer solar cells (PSCs) is achieved by applying a plasmonic enhanced light trapping strategy to a low bandgap conjugated polymer, poly(indacenodithiophene‐ co‐phananthrene‐quinoxaline) (PIDT‐PhanQ) and [6,6]‐phenyl‐C₇₁‐butyric acid methyl ester (PC₇₁BM) based bulk‐heterojunction (BHJ) system. By doping both the rear and front charge‐selecting interfacial layers of the device with different sizes of Au NPs, the PCE of the devices is improved from 6.65% to 7.50% (13% enhancement). A detailed study of processing, characterization, microscopy, and device fabrication is conducted to understand the underlying mechanism for the enhanced device performance. The success of this work provides a simple and generally applicable approach to enhance light harnessing of low bandgap polymers in PSCs.     

Simultaneous Improved Performance and Thermal Stability of Planar Metal Ion Incorporated CsPbI2Br All‐Inorganic Perovskite Solar Cells Based on MgZnO Nanocrystalline Electron Transporting Layer

The high thermal stability and facile synthesis of CsPbI₂Br all‐inorganic perovskite solar cells (AI‐PSCs) have attracted tremendous attention. As far as electron‐transporting layers (ETLs) are concerned, low temperature processing and reduced interfacial recombination centers through tunable energy levels determine the feasibility of the perovskite devices. Although the TiO₂ is the most popular ETL used in PSCs, its processing temperature and moderate electron mobility hamper the performance and feasibility. Herein, the highly stable, low‐temperature processed MgZnO nanocrystal‐based ETLs for dynamic hot‐air processed Mn²⁺ incorporated CsPbI2Br AI‐PSCs are reported. By holding its regular planar “n–i–p” type device architecture, the MgZnO ETL and poly(3‐hexylthiophene‐2,5‐diyl) hole transporting layer, 15.52% power conversion efficiency (PCE) is demonstrated. The thermal‐stability analysis reveals that the conventional ZnO ETL‐based AI‐PSCs show a serious instability and poor efficiency than the Mg²⁺ modified MgZnO ETLs. The photovoltaic and stability analysis of this improved photovoltaic performance is attributed to the suitable wide‐bandgap, low ETL/perovskite interface recombination, and interface stability by Mg²⁺ doping. Interestingly, the thermal stability analysis of the unencapsulated AI‐PSCs maintains >95% of initial PCE more than 400 h at 85 °C for MgZnO ETL, revealing the suitability against thermal degradation than conventional ZnO ETL.     

Electron‐Beam‐Evaporated Nickel Oxide Hole Transport Layers for Perovskite‐Based Photovoltaics

High‐quality charge carrier transport materials are of key importance for stable and efficient perovskite‐based photovoltaics. This work reports on electron‐beam‐evaporated nickel oxide (NiO_x) layers, resulting in stable power conversion efficiencies (PCEs) of up to 18.5% when integrated into solar cells employing inkjet‐printed perovskite absorbers. By adding oxygen as a process gas and optimizing the layer thickness, transparent and efficient NiO_x hole transport layers (HTLs) are fabricated, exhibiting an average absorptance of only 1%. The versatility of the material is demonstrated for different absorber compositions and deposition techniques. As another highlight of this work, all‐evaporated perovskite solar cells employing an inorganic NiO_x HTL are presented, achieving stable PCEs of up to 15.4%. Along with good PCEs, devices with electron‐beam‐evaporated NiO_x show improved stability under realistic operating conditions with negligible degradation after 40 h of maximum power point tracking at 75 °C. Additionally, a strong improvement in device stability under ultraviolet radiation is found if compared to conventional perovskite solar cell architectures employing other metal oxide charge transport layers (e.g., titanium dioxide). Finally, an all‐evaporated perovskite solar mini‐module with a NiO_x HTL is presented, reaching a PCE of 12.4% on an active device area of 2.3 cm².     

Structurally Reconstructed CsPbI2Br Perovskite for Highly Stable and Square‐Centimeter All‐Inorganic Perovskite Solar Cells

Although all‐inorganic perovskite solar cells (PSCs) demonstrate high thermal stability, cesium‐lead halide perovskites with high iodine content suffer from poor stability of the black phase (α‐phase). In this study, it is demonstrated that incorporating InCl₃ into the host perovskite lattice helps to inhibit the formation of yellow phase (δ‐phase) perovskite and thereby enhances the long‐term ambient stability. The enhanced stability is achieved by a strategy for the structural reconstruction of CsPbI₂Br perovskite by means of In³⁺ and Cl^? codoping, which gives rise to a significant improvement in the overall spatial symmetry with a closely packed atom arrangement due to the crystal structure transformation from orthorhombic (Pnma) to cubic (Pm‐3m). In addition, a novel thermal radiation heating method that further improves the uniformity of the perovskite thin films is presented. This approach enables the construction of all‐inorganic InCl₃:CsPbI₂Br PSCs with a champion power conversion efficiency of 13.74% for a small‐area device (0.09 cm²) and 11.4% for a large‐area device (1.00 cm²).