Enhancing the Open‐Circuit Voltage of Perovskite Solar Cells by up to 120 mV Using π‐Extended Phosphoniumfluorene Electrolytes as Hole Blocking Layers

Four π‐extended phosphoniumfluorene electrolytes (π‐PFEs) are introduced as hole‐blocking layers (HBL) in inverted architecture planar perovskite solar cells with the structure of ITO/PEDOT:PSS/MAPbI₃/PCBM/HBL/Ag. The deep‐lying highest occupied molecular orbital energy level of the π‐PFEs effectively blocks holes, decreasing contact recombination. It is demonstrated that the incorporation of π‐PFEs introduces a dipole moment at the PCBM/Ag interface, resulting in significant enhancement of the built‐in potential of the device. This enhancement results in an increase in the open‐circuit voltage of the device by up to 120 mV, when compared to the commonly used bathocuproine HBL. The results are confirmed both experimentally and by numerical simulation. This work demonstrates that interfacial engineering of the transport layer/contact interface by small molecule electrolytes is a promising route to suppress nonradiative recombination in perovskite devices and compensates for a nonideal energetic alignment at the hole‐transport layer/perovskite interface.     

Improved Open‐ Circuit Voltage in ZnO–PbSe Quantum Dot Solar Cells by Understanding and Reducing Losses Arising from the ZnO Conduction Band Tail

Colloidal quantum dot solar cells (CQDSCs) are attracting growing attention owing to significant improvements in efficiency. However, even the best depleted‐heterojunction CQDSCs currently display open‐circuit voltages (V_OCs) at least 0.5 V below the voltage corresponding to the bandgap. We find that the tail of states in the conduction band of the metal oxide layer can limit the achievable device efficiency. By continuously tuning the zinc oxide conduction band position via magnesium doping, we probe this critical loss pathway in ZnO–PbSe CQDSCs and optimize the energetic position of the tail of states, thereby increasing both the V_OC (from 408 mV to 608 mV) and the device efficiency.     

Molecular Engineering in Hole Transport π‐Conjugated Polymers to Enable High Efficiency Colloidal Quantum Dot Solar Cells

Organic p‐type materials are potential candidates as solution processable hole transport materials (HTMs) for colloidal quantum dot solar cells (CQDSCs) because of their good hole accepting/electron blocking characteristics and synthetic versatility. However, organic HTMs have still demonstrated inferior performance compared to conventional p‐type CQD HTMs. In this work, organic π‐conjugated polymer (π‐CP) based HTMs, which can achieve performance superior to that of state‐of‐the‐art HTM, p‐type CQDs, are developed. The molecular engineering of the π‐CPs alters their optoelectronic properties, and the charge generation and collection in CQDSCs using them are substantially improved. A device using PBDTTPD‐HT achieves power conversion efficiency (PCE) of 11.53% with decent air‐storage stability. This is the highest reported PCE among CQDSCs using organic HTMs, and even higher than the reported best solid‐state ligand exchange‐free CQDSC using pCQD‐HTM. From the viewpoint of device processing, device fabrication does not require any solid‐state ligand exchange step or layer‐by‐layer deposition process, which is favorable for exploiting commercial processing techniques.     

Simultaneous Open‐Circuit Voltage Enhancement and Short‐Circuit Current Loss in Polymer: Fullerene Solar Cells Correlated by Reduced Quantum Efficiency for Photoinduced Electron Transfer

The limits of maximizing the open‐circuit voltage V_oc in solar cells based on poly[2,7‐(9,9‐didecylfluorene)‐alt‐5,5‐(4,7‐di‐2‐thienyl‐2,1,3‐benzothiadiazole)] (PF10TBT) as a donor using different fullerene derivatives as acceptor are investigated. Bulk heterojunction solar cells with PF10TBT and [6,6]‐phenyl‐C₆₁‐butyric acid methyl ester (PCBM) give a V_oc over 1 V and a power conversion efficiency of 4.2%. Devices in which PF10TBT is blended with fullerene bisadduct derivatives give an even higher V_oc, but also a strong decrease in short circuit current (J_sc). The higher V_oc is attributed to the higher LUMO of the acceptors in comparison to PCBM. By investigating the photophysics of PF10TBT:fullerene blends using near‐IR photo‐ and electroluminescence, time‐resolved photoluminescence, and photoinduced absorption we find that the charge transfer (CT) state is not formed efficiently when using fullerene bisadducts. Hence, engineering acceptor materials with a LUMO level that is as high as possible can increase V_oc, but will only provide a higher power conversion efficiency, when the quantum efficiency for charge transfer is preserved. To quantify this, we determine the CT energy (E_CT) and optical band gap (E_g), defined as the lowest first singlet state energy E_S1 of either the donor or acceptor, for each of the blends and find a clear correlation between the free energy for photoinduced electron transfer and J_sc. We find that E_g ? qV_oc > 0.6 eV is a simple, but general criterion for efficient charge generation in donor‐acceptor blends.     

High Performance Colloidal Quantum Dot Photovoltaics by Controlling Protic Solvents in Ligand Exchange

Colloidal quantum dots (CQDs) are promising light harvesting materials for realization of solution processible, highly efficient multipurpose photovoltaics (PVs). Here, PbS CQD solar cells are reported with improved certified power conversion efficiency performance of 10.4% by simply controlling protic solvents (alcohols) in ligand exchange process. With shorter chain alcohols, the mobility of charge carriers is an order‐of‐magnitude improved due to the enhanced interparticle coupling; on the other hand, excessive removal of passivating ligands by very protic solvent, methanol (MeOH) induced undesirable traps on CQD surface. Consequently, it has been found that high performance CQD PVs require a solvent engineering for balance between native leaving ligands with incoming ligands during ligand exchange process for well‐controlled surfaces of CQDs and enhanced carrier concentration of conductive CQD films.     

Understanding Open‐Circuit Voltage Loss through the Density of States in Organic Bulk Heterojunction Solar Cells

The field of organic photovoltaics has recently produced highly efficient single‐junction cells with power conversion efficiency >10%, yet the open‐circuit voltage (V_OC) remains relatively low in many high performing systems. An accurate picture of the density of states (DOS) in working solar cells is crucial to understanding the sources of voltage loss, but remains difficult to obtain experimentally. Here, the tail of the DOS is characterized in a number of small molecule bulk heterojunction solar cells from the charge density dependence of V_OC, and is directly compared to the disorder present within donor and acceptor components as measured by Kelvin probe. Using these DOS distributions, the total energy loss relative to the charge transfer state energy (E_CT)—ranging from ≈0.5 to 0.7 eV—is divided into contributions from energetic disorder and from charge recombination, and the extent to which these factors limit the V_OC is assessed.     

Atomic Layer Deposition of CdS Quantum Dots for Solid‐State Quantum Dot Sensitized Solar Cells

Functioning quantum dot (QD) sensitized solar cells have been fabricated using the vacuum deposition technique atomic layer deposition (ALD). Utilizing the incubation period of CdS growth by ALD on TiO₂, we are able to grow QDs of adjustable size which act as sensitizers for solid‐state QD‐sensitized solar cells (ssQDSSC). The size of QDs, studied with transmission electron microscopy (TEM), varied with the number of ALD cycles from 1‐10 nm. Photovoltaic devices with the QDs were fabricated and characterized using a ssQDSSC device architecture with 2,2',7,7'‐tetrakis‐(N,N‐di‐p methoxyphenylamine) 9,9'‐spirobifluorene (spiro‐OMeTAD) as the solid‐state hole conductor. The ALD approach described here can be applied to fabrication of quantum‐confined structures for a variety of applications, including solar electricity and solar fuels. Because ALD provides the ability to deposit many materials in very high aspect ratio substrates, this work introduces a strategy by which material and optical properties of QD sensitizers may be adjusted not only by the size of the particles but also in the future by the composition.     

Efficient Organic Solar Cells with Extremely High Open‐Circuit Voltages and Low Voltage Losses by Suppressing Nonradiative Recombination Losses

One of the most important factors that limits the efficiencies of bulk‐heterojunction organic solar cells (OSCs) is the modest open‐circuit voltage (V_oc) due to their large voltage loss (V_loss) caused by significant nonradiative recombination loss. To boost the performance of OSCs toward their theoretical limit, developing high‐performance donor: acceptor systems featuring low V_loss with suppressed nonradiative recombination losses (<0.30 V) is desired. Herein, high performance OSCs based on a polymer donor benzodithiophene‐difluorobenzoxadiazole‐2‐decyltetradecyl (BDT‐ffBX‐DT) and perylenediimide‐based acceptors (PDI dimer with spirofluorene linker (SFPDI), PDI4, and PDI6) are reported which offer a high power conversion efficiency (PCE) of 7.5%, 56% external quantum efficiency associated with very high V_oc (>1.10 V) and low V_loss (<0.60 V). A high V_oc up to 1.23 V is achieved, which is among the highest values reported for OSCs with a PCE beyond 6%, to date. These attractive results are benefit from the suppressed nonradiative recombination voltage loss, which is as low as 0.20 V. This value is the lowest value for OSCs so far and is comparable to high performance crystalline silicon and perovskite solar cells. These results show that OSCs have the potential to achieve comparable V_oc and voltage loss as inorganic photovoltaic technologies.     

Disorder‐Induced Open‐Circuit Voltage Losses in Organic Solar Cells During Photoinduced Burn‐In

The photoinduced open‐circuit voltage (V_oc) loss commonly observed in bulk heterojunction organic solar cells made from amorphous polymers is investigated. It is observed that the total charge carrier density and, importantly, the recombination dynamics are unchanged by photoinduced burn‐in. Charge extraction is used to monitor changes in the density of states (DOS) during degradation of the solar cells, and a broadening over time is observed. It is proposed that the V_oc losses observed during burn‐in are caused by a redistribution of charge carriers in a broader DOS. The temperature and light intensity dependence of the V_oc losses can be described with an analytical model that contains the amount of disorder broadening in a Gaussian DOS as the only fit parameter. Finally, the V_oc loss in solar cells made from amorphous and crystalline polymers is compared and an increased stability observed in crystalline polymer solar cells is investigated. It is found that solar cells made from crystalline materials have a considerably higher charge carrier density than those with amorphous materials. The effects of a DOS broadening upon aging are suppressed in solar cells with crystalline materials due to their higher carrier density, making crystalline materials more stable against V_oc losses during burn‐in.     

Low‐Temperature‐Processed 9% Colloidal Quantum Dot Photovoltaic Devices through Interfacial Management of p–n Heterojunction

Low‐temperature solution‐processed high‐efficiency colloidal quantum dot (CQD) photovoltaic devices are developed by improving the interfacial properties of p–n heterojunctions. A unique conjugated polyelectrolyte, WPF‐6‐oxy‐F, is used as an interface modification layer for ZnO/PbS‐CQD heterojunctions. With the insertion of this interlayer, the device performance is dramatically improved. The origins of this improvement are determined and it is found that the multifunctionality of the WPF‐6‐oxy‐F interlayer offers the following essential benefits for the improved CQD/ZnO junctions: (i) the dipole induced by the ionic substituents enhances the quasi‐Fermi level separation at the heterojunction through favorable energy band‐bending, (ii) the ethylene oxide groups containing side chains can effectively passivate the interfacial defect sites of the heterojunction, and (iii) these effects occur without deterioration in the intrinsic depletion region or the series resistance of the device. All of the figures‐of‐merit of the devices are improved as a result of the enhanced built‐in potential (electric field) and the reduced interfacial charge recombination at the heterojunction. The benefits due to the WPF‐6‐oxy‐F interlayer are generally applicable to various types of PbS/ZnO heterojunctions. Finally, CQD photovoltaic devices with a power conversion efficiency of 9% are achievable, even by a solution process at room temperature in an air atmosphere. The work suggests a useful strategy to improve the interfacial properties of p–n heterojunctions by using polymeric interlayers.     

Open‐Circuit Voltage in Organic Solar Cells: The Impacts of Donor Semicrystallinity and Coexistence of Multiple Interfacial Charge‐Transfer Bands

In organic solar cells (OSCs), the energy of the charge‐transfer (CT) complexes at the donor–acceptor interface, E _CT, determines the maximum open‐circuit voltage (V _OC). The coexistence of phases with different degrees of order in the donor or the acceptor, as in blends of semi‐crystalline donors and fullerenes in bulk heterojunction layers, influences the distribution of CT states and the V _OC enormously. Yet, the question of how structural heterogeneities alter CT states and the V _OC is seldom addressed systematically. In this work, we combine experimental measurements of vacuum‐deposited rubrene/C₆₀ bilayer OSCs, with varying microstructure and texture, with density functional theory calculations to determine how relative molecular orientations and extents of structural order influence E _CT and V _OC. We find that varying the microstructure of rubrene gives rise to CT bands with varying energies. The CT band that originates from crystalline rubrene lies up to ≈0.4 eV lower in energy compared to the one that arises from amorphous rubrene. These low‐lying CT states contribute strongly to V _OC losses and result mainly from hole delocalization in aggregated rubrene. This work points to the importance of realizing interfacial structural control that prevents the formation of low E _CT configurations and maximizes V _OC.     

Improved Processability and Efficiency of Colloidal Quantum Dot Solar Cells Based on Organic Hole Transport Layers

High‐efficiency solid‐state‐ligand‐exchange (SSE) step‐free colloidal quantum dot photovoltaic (CQDPV) devices are developed by employing CQD ink based active layers and organic (Polythieno[3,4‐b]‐thiophene‐co‐benzodithiophene (PTB7) and poly(3‐hexylthiophene) (P3HT)) based hole transport layers (HTLs). The device using PTB7 as an HTL exhibits superior performance to that using the current leading organic HTL, P3HT, because of favorable energy levels, higher hole mobility, and facilitated interfacial charge transfer. The PTB7 based device achieves power conversion efficiency (PCE) of 9.60%, which is the highest among reported CQDPVs using organic HTLs. This result is also comparable to the PCE of an optimized device based on a thiol‐exchanged p‐type CQD, the current‐state‐of‐the‐art HTL. From the viewpoint of device processing, the fabrication of CQDPVs is achieved by direct single‐coating of CQD active layers and organic HTLs at low temperature without SSE steps. The experimental results and device simulation results in this work suggest that further engineering of organic HTL materials can open new doors to improve the performance and processing of CQDPVs.