Highly Passivated n‐Type Colloidal Quantum Dots for Solution‐Processed Thermoelectric Generators with Large Output Voltage

Colloidal quantum dots (CQDs) are attractive materials for thermoelectric applications due to their simple and low‐cost processing; advantageously, they also offer low thermal conductivity and high Seebeck coefficient. To date, the majority of CQD thermoelectric films reported upon have been p‐type, while only a few reports are available on n‐type films. High‐performing n‐ and p‐type films are essential for thermoelectric generators (TEGs) with large output voltage and power. Here, high‐thermoelectric‐performance n‐type CQD films are reported and showcased in high‐performance all‐CQD TEGs. By engineering the electronic coupling in the films, a thorough removal of insulating ligands is achieved and this is combined with excellent surface trap passivation. This enables a high thermoelectric power factor of 24 µW m^?1 K^?2, superior to previously reported n‐type lead chalcogenide CQD films operating near room temperature (<1 µW m^?1 K^?2). As a result, an all‐CQD film TEG with a large output voltage of 0.25 V and a power density of 0.63 W m^?2 at ?T = 50 K is demonstrated, which represents an over fourfold enhancement to previously reported p‐type only CQD TEGs.     

Flexible Quasi‐Solid State Ionogels with Remarkable Seebeck Coefficient and High Thermoelectric Properties

Thermoelectric materials can be used to harvest low‐grade heat that is otherwise dissipated to the environment. But the conventional thermoelectric materials that are semiconductors or semimetals, usually exhibit a Seebeck coefficient of much less than 1 mV K^?1. They are expensive and consist of toxic elements as well. Here, it is demonstrated environmental benign flexible quasi‐solid state ionogels with giant Seebeck coefficient and ultrahigh thermoelectric properties. The ionogels made of ionic liquids and poly(vinylidene fluoride‐co‐hexafluoropropylene) (PVDF‐HFP) can exhibit a giant Seebeck coefficient up to 26.1 mV K^?1, the highest for electronic and ionic conductors. In addition, they have a high ionic conductivity of 6.7 mS cm^?1 and a low thermal conductivity of 0.176 W m^?1 K^?1. Their thermoelectric figure of merit (ZT) is thus 0.75. The giant Seebeck coefficient is related to the ion‐dipole interaction between PVDF‐HFP and ionic liquids. Their application in ionic thermoelectric capacitors is also demonstrated for the conversion of intermittent heat into electricity. They are especially important to harvest the low‐grade thermal energy that is abundant on earth.     

Optimization of Electrodeposited p‐Doped Sb2Te3 Thermoelectric Films by Millisecond Potentiostatic Pulses

A systematic optimization of p‐type Sb₂Te₃ thermoelectric films made by potentiostatic electrodeposition on Au and stainless steel substrates is presented. The influence of the preparative parameters of deposition voltage, concentration, and the deposition method are investigated in a nitric acid solution. As a postdeposition step, the influence of annealing the films is investigated. The use of a potential‐controlled millisecond‐pulsed deposition method could improve both the morphology and the composition of the films. The samples are characterized in terms of composition, crystallinity, Seebeck coefficient, and electrical resistivity. Pulsed‐deposited films exhibit Seebeck coefficients of up to 160 μV K^?1 and an electrical conductivity of 280 S cm^?1 at room temperature, resulting in power factors of about 700 μW m^?1 K^?2. After annealing, power factors of maximum 852 μW m^?1 K^?2 are achieved. Although the annealing of DC‐deposited films significantly increased the power factor, they do not reach the values of the pulsed‐deposited films in the preannealing state. Structural analysis is performed with X‐ray diffraction and shows the crystalline structure of Sb₂Te₃ films. The performance is tuned by annealing of deposited films up to 300 °C under He atmosphere while performing in‐situ X‐ray diffraction and resistivity measurements. The chemical analysis of the films is performed by inductively coupled plasma optical emission spectroscopy (ICP‐OES) as well as scanning electron microscope energy dispersive X‐ray analysis (SEM‐EDX).     

Flexible Thermoelectric Generators Composed of n‐and p‐Type Silicon Nanowires Fabricated by Top‐Down Method

This study demonstrates the fabrication and characterization of a flexible thermoelectric (TE) power generator composed of silicon nanowires (SiNWs) fabricated by top‐down method and discusses its strain‐dependence analysis. The Seebeck coefficients of the p‐ and n‐type SiNWs used to form a pn‐module are 156.4 and ?146.1 µV K^?1, respectively. The maximum power factors of the p‐ and n‐type SiNWs are obtained as 8.79 and 8.87 mW (m K²)^?1, respectively, under a convex bending of 1.11%, respectively; these are the largest values among the power factors hitherto reported for SiNWs. The dimensionless figure of merit (ZT ) values of the SiNWs at room temperature are 6.8 × 10^?2 and 6.7 × 10^?2 for the convex bent p‐ and n‐type SiNWs, respectively, with a strain of 1.11%. The thermoelectric properties of the pn‐module and its component SiNWs are characterized under strain conditions ranging from ?1.11% to 1.11%. The maximum Seebeck coefficient and power factor of the pn‐module are obtained as 448 µV K^?1 and 14.2 mW (m K²)^?1, respectively, under convex bending of 1.11%. Moreover, the mechanical stability of the TE characteristics of the pn‐module is demonstrated through a continuous bending test of 3000 cycles under convex bending of 0.66%.     

Optimizations of Pulsed Plated p and n‐type Bi2Te3‐Based Ternary Compounds by Annealing in Different Ambient Atmospheres

This work presents a comprehensive study of the fabrication and optimization of electrodeposited p‐ and n‐type thermoelectric films. The films are deposited on Au and stainless steel substrates over a wide range of deposition potentials. The influence of the preparative parameters such as the composition of the electrolyte bath and the deposition potential are investigated. Furthermore, the p‐doped (Bi_xSb_1‐x)₂Te₃ and the n‐doped Bi₂(Te_xSe_1‐x)₃ films are annealed for a period of about 1 h under helium and under tellurium atmosphere at 250 °C for 60h. Annealing in He already leads to significant improvements in the thermoelectric performance. Furthermore, due to the equilibrium conditions during the process, annealing in Te atmosphere leads to a strongly improved film composition, charge carrier density and mobility. The Seebeck coefficients increase to values up to +182 μV K^?1 for p‐doped and–130 μV K^?1 for n‐doped materials at room temperature. The power factors also exhibit improvements with 1320 μW m^?1 K^?2 and 820 μW m^?1 K^?2 for p‐doped and n‐doped films, respectively. Additionally, in‐situ XRD measurements performed during annealing of the films up to 600K under He atmosphere show stepwise improvements of the crystal structure leading to the improvements in thermoelectric parameters. The thermal conductivity is between 1.2 W m^?1 K^?1 and 1.0 W m^?1 K^?1.     

Engineering the Thermoelectric Transport in Half‐Heusler Materials through a Bottom‐Up Nanostructure Synthesis

Half‐Heusler (HH) alloys are among the best promising thermoelectric (TE) materials applicable for the middle‐to‐high temperature power generation. Despite of the large thermoelectric power factor and decent figure‐of‐merit ZT (≈1), their broad applications and enhancement on TE performance are limited by the high intrinsic lattice thermal conductivity (κ_L) due to insufficiencies of phonon scattering mechanisms, and the fewer powerful strategies associated with the microstructural engineering for HH materials. This study reports a bottom‐up nanostructure synthesis approach for these HH materials based on the displacement reaction between metal chlorides/bromides and magnesium (or lithium), followed by vacuum‐assisted spark plasma sintering process. The samples are featured with dense dislocation arrays at the grain boundaries, leading to a minimum κ_L of ≈1 W m^?1 K^?1 at 900 K and one of the highest ZT (≈1) and predicted η (≈11%) for n‐type Hf_0.25Zr_0.75NiSn_0.97Sb_0.03. Further manipulation on the dislocation defects at the grain boundaries of p‐type Nb_0.8Ti_0.2FeSb leads to enhanced maximum power factor of 47 × 10^?4 W m^?1 K^?2 and the predicted η of ≈7.5%. Moreover, vanadium substitution in FeNb_0.56V_0.24Ti_0.2Sb significantly promotes the η to ≈11%. This strategy can be extended to a broad range of advanced alloys and compounds for improved properties.     

Subtle Roles of Sb and S in Regulating the Thermoelectric Properties of N‐Type PbTe to High Performance

A high ZT (thermoelectric figure of merit) of ≈1.4 at 900 K for n‐type PbTe is reported, through modifying its electrical and thermal properties by incorporating Sb and S, respectively. Sb is confirmed to be an amphoteric dopant in PbTe, filling Te vacancies at low doping levels (<1%), exceeding which it enters into Pb sites. It is found that Sb‐doped PbTe exhibits much higher carrier mobility than similar Bi‐doped materials, and accordingly, delivers higher power factors and superior ZT . The enhanced electronic transport is attributed to the elimination of Te vacancies, which appear to strongly scatter n‐type charge carriers. Building on this result, the ZT of Pb_0.9875Sb_0.0125Te is further enhanced by alloying S into the Te sublattice. The introduction of S opens the bandgap of PbTe, which suppresses bipolar conduction while simultaneously increasing the electron concentration and electrical conductivity. Furthermore, it introduces point defects and induces second phase nanostructuring, which lowers the lattice thermal conductivity to ≈0.5 W m^?1 K^?1 at 900 K, making this material a robust candidate for high‐temperature (500–900 K) thermoelectric applications. It is anticipated that the insights provided here will be an important addition to the growing arsenal of strategies for optimizing the performance of thermoelectric materials.     

Progressive Regulation of Electrical and Thermal Transport Properties to High‐Performance CuInTe2 Thermoelectric Materials

p‐type CuInTe₂ thermoelectric (TE) materials are of great interest for applications in the middle temperature range because of their environmentally benign chemical component and stable phase under operating temperatures. In order to enhance their TE performance to compete with the Pb based TE materials, a progressive regulation of electrical and thermal transport properties has been employed in this work. Anion P and Sb substitution is used to tune the electrical transport properties of CuInTe₂ for the first time, leading to a sharp enhancement in power factor due to the reduction of electrical resistivity by acceptor doping and the increase of the Seebeck coefficient resulted from the improvement of density of states. Concurrently, In₂O₃ nanoinclusions are introduced through an in situ oxidation between CuInTe₂ and ZnO additives, rendering a great reduction in the thermal conductivity of CuInTe₂ by the extra phonon scattering. Then, by integrating the anion substitution and nanoinclusions, a high power factor of 1445 μW m^?1 K^?2 and enhanced ZT of 1.61 at 823 K are achieved in the CuInTe₂ based TE material. This implies that the synergistic regulation of electrical and thermal transport properties by anion substitution and in situ nanostructure is a very effective approach to improve the TE performance of CuInTe₂ compounds.     

Large Voltage Generation of Flexible Thermoelectric Nanocrystal Thin Films by Finger Contact

This paper demonstrates that thermal energy radiated from a human finger can be converted efficiently into electricity by a nanocrystal (NC) thin film that substantially suppresses thermal conduction, but still allows electric conduction. The converting efficiencies of the chalcogenide NC thin films with dimensions 40 µm × 20 µm × 20 nm, prepared on flexible substrates by a solution process, are maximized by adjusting the NC size. A Seebeck coefficient of S = 1829 µV K^?1, and a dimensionless thermoelectric figure‐of‐merit, ZT = 0.68 are achieved at ambient temperature for p‐ and n‐type NC thin films, respectively. A thermoelectric array consisting of p‐ and n‐type NC thin films generates a voltage of 645 mV for a temperature gradient of 10 K. Furthermore, the donut‐shaped pn array can generate a voltage of 170 mV from the heat supplied by an individual's finger.     

High Thermoelectric zT in n‐Type Silver Selenide films at Room Temperature

In this work, a zT value as high as 1.2 at room temperature for n‐type Ag₂Se films is reported grown by pulsed hybrid reactive magnetron sputtering (PHRMS). PHRMS is a novel technique developed in the lab that allows to grow film of selenides with different compositions in a few minutes with great quality. The improved zT value reported for room temperature results from the combination of the high power factors, similar to the best values reported for bulk Ag₂Se (2440 ± 192 µW m^?1 K^?2), along with a reduced thermoelectric conductivity as low as 0.64 ± 0.1 W m^?1 K^?1. The maximum power factor for these films is of 4655 ± 407 µW m^?1 K^?2 at 103 °C. This material shows promise to work for room temperature applications. Obtaining high zT or, in other words, high power factor and low thermal conductivity values close to room temperature for thin films is of high importance to develop a new generation of wearable devices based on thermoelectric heat recovery.     

Conductive,Solution‐Processed Dioxythiophene Copolymers for Thermoelectric and Transparent Electrode Applications

Conjugated polymers with high electrical conductivities are attractive for applications in capacitors, biosensors, organic thermoelectrics, and transparent electrodes. Here, a series of solution processable dioxythiophene copolymers based on 3,4‐propylenedioxythiophene (ProDOT) and 3,4‐ethylenedioxythiophene (EDOT) is investigated as thermoelectric and transparent electrode materials. Through structural manipulation of the polymer repeat unit, the conductivity of the polymers upon oxidative solution doping is tuned from 1 × 10^?3 to 3 S cm^?1, with a polymer consisting of a solubilizing alkylated ProDOT unit and an electron‐rich biEDOT unit (referred to as PE₂) showing the highest electrical conductivity. Optimization of the film casting method and screening of dopants result in AgPF₆‐doped PE₂ achieving a high electrical conductivity of over 250 S cm^?1 and a thermoelectric power factor of 7 μW m^?1 K^?2. Oxidized spray cast films of PE₂ are also assessed as a transparent electrode material for use with another electrochromic polymer. This bilayer shows reversible electrochemical switching from a colored charge‐neutral state to a highly transmissive color‐neutral, oxidized state. These results demonstrate that dioxythiophene‐based copolymers are a promising class of materials, with ProDOT–biEDOT serving as a soluble analog to the well‐studied PEDOT as a p‐type thermoelectric and electrode material.     

Sodium‐Doped Tin Sulfide Single Crystal: A Nontoxic Earth‐Abundant Material with High Thermoelectric Performance

Lead‐free tin sulfide (SnS), with an analogous structure to SnSe, has attracted increasing attention because of its theoretically predicted high thermoelectric performance. In practice, however, polycrystalline SnS performs rather poorly as a result of its low power factor. In this work, bulk sodium (Na)‐doped SnS single crystals are synthesized using a modified Bridgman method and a detailed transport evaluation is conducted. The highest zT value of ≈1.1 is reached at 870 K in a 2 at% Na‐doped SnS single crystal along the b‐axis direction, in which high power factors (2.0 mW m^?1 K^?2 at room temperature) are realized. These high power factors are attributed to the high mobility associated with the single crystalline nature of the samples as well as to the enhanced carrier concentration achieved through Na doping. An effective single parabolic band model coupled with first‐principles calculations is used to provide theoretical insight into the electronic transport properties. This work demonstrates that SnS‐based single crystals composed of earth‐abundant, low‐cost, and nontoxic chemical elements can exhibit high thermoelectric performance and thus hold potential for application in the area of waste heat recovery.     

Grain Boundary Engineering for Achieving High Thermoelectric Performance in n‐Type Skutterudites

Grain or phase boundaries play a critical role in the carrier and phonon transport in bulk thermoelectric materials. Previous investigations about controlling boundaries primarily focused on the reducing grain size or forming nanoinclusions. Herein, liquid phase compaction method is first used to fabricate the Yb‐filled CoSb₃ with excess Sb content, which shows the typical feature of low‐angle grain boundaries with dense dislocation arrays. Seebeck coefficients show a dramatic increase via energy filtering effect through dislocation arrays with little deterioration on the carrier mobility, which significantly enhances the power factor over a broad temperature range with a high room‐temperature value around 47 μW cm^?2 K^?1. Simultaneously, the lattice thermal conductivity could be further suppressed via scattering phonons via dense dislocation scattering. As a result, the highest average figure of merit ZT of ≈1.08 from 300 to 850 K could be realized, comparable to the best reported result of single or triple‐filled Skutterudites. This work clearly points out that low‐angle grain boundaries fabricated by liquid phase compaction method could concurrently optimize the electrical and thermal transport properties leading to an obvious enhancement of both power factor and ZT .     

Graphite oxide‐dispersed CdTe quantum dots nanocomposite for flexible display luminescent membranes

A quantum dot (QD) dispersant material was prepared using graphite oxide (GO). Luminescent films were prepared using polyvinyl alcohol as the polymer matrix. First, water‐soluble CdTe QDs were prepared by wet chemistry and GO was synthesized using a modified Hummers method. X‐Ray diffraction tests showed that the GO reflection peak [001] was 11.9°, which indicates that the d‐spacing is 0.7431 nm; atomic force microscopy showed a GO thickness of 200 nm. Fourier transform infrared spectra showed vibrations at 1624 cm^?1 for the carbonyl groups, and 3260 cm^?1 for the GO samples; the ‐C–O vibration was at 1320 cm^?1 and ‐COOH, ?OH vibrations were at 950 cm^?1. Fluorescent tests showed that pH had an impact on the QD colloidal stability. GO was neutralized before use as the host media for the GO/QDs nanocomposite. The results proved that the resultant nanocomposite is promising for use in brightness enhancement films in flexible displays.     

High Thermoelectric Performance in Polycrystalline SnSe Via Dual‐Doping with Ag/Na and Nanostructuring With Ag8SnSe6

Single crystalline SnSe is one of the most intriguing new thermoelectric materials but the thermoelectric performance of polycrystalline SnSe seems to lag significantly compared to that of a single crystal. Here an effective strategy for enhancing the thermoelectric performance of p‐type polycrystalline SnSe by Ag/Na dual‐doping and Ag₈SnSe₆ (STSe) nanoprecipitates is reported. The Ag/Na dual‐doping leads to a two orders of magnitude increase in carrier concentration and a convergence of valence bands (VBM₁ and VBM₅), which in turn results in sharp enhancement of electrical conductivities and high Seebeck coefficients in the Ag/Na dual‐doped samples. Additionally, the SnSe matrix becomes nanostructured with dispersed nanoprecipitates of the compound Ag₈SnSe₆, which further strengthens the scattering of phonons. Specifically, ≈20% reduction in the already ultralow lattice thermal conductivity is realized for the Sn_0.99Na_0.01Se–STSe sample at 773 K compared to the thermal conductivity of pure SnSe. Consequently, a peak thermoelectric figure of merit ZT of 1.33 at 773 K with a high average ZT (ZT_ave) value of 0.91 (423–823 K) is achieved for the Sn_0.99Na_0.01Se–STSe sample.     

Significantly Enhanced Thermoelectric Properties of PEDOT:PSS Films through Sequential Post‐Treatments with Common Acids and Bases

Thermoelectric (TE) materials are important for the sustainable development because they enable the direct harvesting of low‐quality heat into electricity. Among them, conducting polymers have attracted great attention arising from their advantages, such as flexibility, nontoxicity, easy availability, and intrinsically low thermal conductivity. In this work, a novel and facile method is reported to significantly enhance the TE property of poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) films through sequential post‐treatments with common acids and bases. Compared with the as‐prepared PEDOT:PSS, both the Seebeck coefficients and electrical conductivities can be remarkably enhanced after the treatments. The oxidation level, which significantly impacts the TE property of the PEDOT:PSS films, can also be well tuned by controlling the experimental conditions during the base treatment. The optimal PEDOT:PSS films can have a Seebeck coefficient of 39.2 µV K^?1 and a conductivity of 2170 S cm^?1 at room temperature, and the corresponding power factor is 334 µW (m^?1 K^?2). The enhancement in the TE properties is attributed to the synergetic effect of high charge mobility by the acid treatment and the optimal oxidation level tuned by the base treatment.     

Bringing Conducting Polymers to High Order: Toward Conductivities beyond 105 S cm−1 and Thermoelectric Power Factors of 2 mW m−1 K−2

Here, an effective design strategy of polymer thermoelectric materials based on structural control in doped polymer semiconductors is presented. The strategy is illustrated for two archetypical polythiophenes, e.g., poly(2,5‐bis(3‐dodecyl‐2‐thienyl)thieno[3,2‐b]thiophene) (C₁₂‐PBTTT) and regioregular poly(3‐hexylthiophene) (P3HT). FeCl₃ doping of aligned films results in charge conductivities up to 2 × 10⁵ S cm^?1 and metallic‐like thermopowers similar to iodine‐doped polyacetylene. The films are almost optically transparent and show strongly polarized near‐infrared polaronic bands (dichroic ratio >10). The comparative study of structure–property correlations in P3HT and C₁₂‐PBTTT identifies three conditions to obtain conductivities beyond 10⁵ S cm^?1: i) achieve high in‐plane orientation of conjugated polymers with high persistence length; ii) ensure uniform chain oxidation of the polymer backbones by regular intercalation of dopant molecules in the polymer structure without disrupting alignment of π‐stacked layers; and iii) maintain a percolating nanomorphology along the chain direction. The highly anisotropic conducting polymer films are ideal model systems to investigate the correlations between thermopower S and charge conductivity σ. A scaling law S ∝ σ^?1/4 prevails along the chain direction, but a different S ∝ ?ln(σ) relation is observed perpendicular to the chains, suggesting different charge transport mechanisms. The simultaneous increase of charge conductivity and thermopower along the chain direction results in a substantial improvement of thermoelectric power factors up to 2 mW m^?1 K^?2 in C₁₂‐PBTTT.     

µ‐Graphene Crosslinked CsPbI3 Quantum Dots for High Efficiency Solar Cells with Much Improved Stability

All‐inorganic perovskite CsPbI₃ quantum dots (QDs) offer much better stability for photovoltaic applications. Unfortunately, their cell efficiencies are hindered by the low carrier transport efficiency of QD‐assembled films. In addition, agglomeration‐induced phase change of QDs poses another problem for material and device degradation. Herein, the use of µ‐graphene (µGR) to crosslink QDs to form µGR/CsPbI₃ film is demonstrated. It is found that the resultant QDs film provides not only an effective channel for carrier transport, as witnessed by much improved conductivity but also significantly better stability against moisture, humidity, and high temperature stresses. The µGR/CsPbI₃ based solar cell shows increased device performance. More specifically, compared to the solar cell without the µGR treatment, V_OC is improved to 1.18 from 1.16 V, J_SC to 13.59 from 13.17 mA cm^?2, and FF to 72.6 from 68.1%, and overall power conversion efficiency to as high as 11.40 from 10.41%, a 12% increase. In addition, the instability originating from the thermal/moisture‐induced QD agglomeration is also greatly suppressed by the µGR crosslinking. The optimized device retains >98% of its initial efficiency after being stored in N₂ atmosphere for one month. Importantly, under 60% humidity and 100 °C thermal stresses, the µGR/CsPbI₃ devices show much better stability.     

High Performance Colloidal Quantum Dot Photovoltaics by Controlling Protic Solvents in Ligand Exchange

Colloidal quantum dots (CQDs) are promising light harvesting materials for realization of solution processible, highly efficient multipurpose photovoltaics (PVs). Here, PbS CQD solar cells are reported with improved certified power conversion efficiency performance of 10.4% by simply controlling protic solvents (alcohols) in ligand exchange process. With shorter chain alcohols, the mobility of charge carriers is an order‐of‐magnitude improved due to the enhanced interparticle coupling; on the other hand, excessive removal of passivating ligands by very protic solvent, methanol (MeOH) induced undesirable traps on CQD surface. Consequently, it has been found that high performance CQD PVs require a solvent engineering for balance between native leaving ligands with incoming ligands during ligand exchange process for well‐controlled surfaces of CQDs and enhanced carrier concentration of conductive CQD films.     

Thermal–Electric Nanogenerator Based on the Electrokinetic Effect in Porous Carbon Film

Converting low‐grade thermal energy with small temperature gradient into electricity is challenging due to the low efficiency and high cost. Here, a new type of thermal–electric nanogenerator is reported that utilizes electrokinetic effect for effective harvesting thermal energy. The nanogenerator is based on an evaporation‐driven water flow in porous medium with small temperature gradient. With a piece of porous carbon film and deionized water, a maximum open‐circuit voltage of 0.89 V under a temperature difference of 4.2 °C is obtained, having a corresponding pseudo‐Seebeck coefficient of 210 mV K^?1. The large pseudo‐Seebeck coefficient endows the nanogenerator sufficient power output for powering existing electronics directly. Furthermore, a wearable bracelet nanogenerator utilizing body heat is also demonstrated. The unique properties of such conversion process offer great potential for ultra‐low temperature‐gradient thermal energy recovery, wearable electronics, and self‐powered sensor systems.