Atomic‐Scale Observation of Oxygen Substitution and Its Correlation with Hole‐Transport Barriers in Cu2ZnSnSe4 Thin‐Film Solar Cells

Kesterite‐type Cu₂ZnSn(S,Se)₄ has been extensively studied over the past several years, with researchers searching for promising candidates for indium‐ and gallium‐free inexpensive absorbers in high‐efficiency thin‐film solar cells. Many notable experimental and theoretical studies have dealt with the effects of intrinsic point defects, Cu/Zn/Sn nonstoichiometry, and cation impurities on cell performance. However, there have been few systematic investigations elucidating the distribution of oxygen at an atomic scale and the correlation between oxygen substitution and charge transport despite unavoidable incorporation of oxygen from the ambient atmosphere during thin‐film fabrication. Using energy‐dispersive X‐ray spectroscopy, scanning transmission electron microscopy, and electron energy‐loss spectroscopy, the presence of nanoscale layers is directly demonstrated in which oxygen is substantially substituted for Se, near grain boundaries in polycrystalline Cu₂ZnSnSe₄ films. Density‐functional theory calculations also show that oxygen substitution remarkably lowers the valence band maximum and subsequently widens the overall bandgap. Consequently, anion modification by oxygen can make a major contribution to the formation of a robust barrier blocking the holes from bulk grains into grain boundaries, thereby efficiently attaining electron?hole separation. The findings provide crucial insights into achieving better energy conversion efficiency in kesterite‐based thin‐film solar cells through optimum control of oxidation during the fabrication process.     

Electrochemical Reaction of Lithium with Nanostructured Silicon Anodes: A Study by In‐Situ Synchrotron X‐Ray Diffraction and Electron Energy‐Loss Spectroscopy

Silicon‐based anodes are an appealing alternative to graphite for lithium‐ion batteries because of their extremely high capacity. However, poor cycling stability and slow kinetics continue to limit the widespread use of silicon in commercial batteries. Performance improvement has been often demonstrated in nanostructured silicon electrodes, but the reaction mechanisms involved in the electrochemical lithiation of nanoscale silicon are not well understood. Here, in‐situ synchrotron X‐ray diffraction is used to monitor the subtle structural changes occurring in Si nanoparticles in a Si‐C composite electrode during lithiation. Local analysis by electron energy‐loss spectroscopy and transmission electron microscopy is performed to interrogate the nanoscale morphological changes and phase evolution of Si particles at different depths of discharge. It is shown that upon lithiation, Si nanoparticles behave quite differently than their micrometer‐sized counterparts. Although both undergo an electrochemical amorphization, the micrometer‐sized silicon exhibits a linear transformation during lithiation, while a two‐step process occurs in the nanoscale Si. In the first half of the discharge, lithium reacts with surfaces, grain boundaries and planar defects. As the reaction proceeds and the cell voltage drops, lithium consumes the crystalline core transforming it into amorphous Li_xSi with a primary particle size of just a few nanometers. Unlike the bulk silicon electrode, no Li₁₅Si₄ or other crystalline Li_xSi phases were formed in nanoscale Si at the fully‐lithiated state.     

Fill Factor Losses in Cu2ZnSn(SxSe1−x)4 Solar Cells: Insights from Physical and Electrical Characterization of Devices and Exfoliated Films

Besides the open circuit voltage (V_OC) deficit, fill factor (FF) is the second most significant parameter deficit for earth‐abundant kesterite solar cell technology. Here, various pathways for FF loss are discussed, with focus on the series resistance issue and its various contributing factors. Electrical and physical characterizations of the full range of bandgap (E_g = 1.0–1.5 eV) Cu₂ZnSn(S_xSe_1?x)₄ (CZTSSe) devices, as well as bare and exfoliated films with various S/(S + Se) ratios, are performed. High intensity Suns‐V_OC measurement indicates a nonohmic junction developing in high bandgap CZTSSe. Grazing incidence X‐ray diffraction, Raman mapping, field emission scanning electron microscopy, and X‐ray photoelectron spectroscopy indicate the formation of Sn(S,Se)₂, Mo(S,Se)₂, and Zn(S,Se) at the high bandgap CZTSSe/Mo interface, contributing to the increased series resistance (R_S) and nonohmic back contact characteristics. This study offers some clues as to why the record‐CZTSSe solar cells occur within a bandgap range centered around 1.15 eV and offers some direction for further optimization.     

Suppressed Deep Traps and Bandgap Fluctuations in Cu2CdSnS4 Solar Cells with ≈8% Efficiency

The identification of performance‐limiting factors is a crucial step in the development of solar cell technologies. Cu₂ZnSn(S,Se)₄‐based solar cells have shown promising power conversion efficiencies in recent years, but their performance remains inferior compared to other thin‐film solar cells. Moreover, the fundamental material characteristics that contribute to this inferior performance are unclear. In this paper, the performance‐limiting role of deep‐trap‐level‐inducing 2Cu_Zn+Sn_Zn defect clusters is revealed by comparing the defect formation energies and optoelectronic characteristics of Cu₂ZnSnS₄ and Cu₂CdSnS₄. It is shown that these deleterious defect clusters can be suppressed by substituting Zn with Cd in a Cu‐poor compositional region. The substitution of Zn with Cd also significantly reduces the bandgap fluctuations, despite the similarity in the formation energy of the Cu_Zn+Zn_Cu and Cu_Cd+Cd_Cu antisites. Detailed investigation of the Cu₂CdSnS₄ series with varying Cu/[Cd+Sn] ratios highlights the importance of Cu‐poor composition, presumably via the presence of V_Cu, in improving the optoelectronic properties of the cation‐substituted absorber. Finally, a 7.96% efficient Cu₂CdSnS₄ solar cell is demonstrated, which shows the highest efficiency among fully cation‐substituted absorbers based on Cu₂ZnSnS₄.     

Pathways for Electron Tunneling in Cytochrome c Oxidase

Warburg showed in 1929 that the photochemical action spectrum for CO dissociation from cytochrome c oxidase is that of a heme protein. Keilin had shown that cytochrome a does not react with oxygen, so he did not accept Warburg's view until 1939, when he discovered cytochrome a ₃. The dinuclear cytochrome a ₃-Cu_B unit was found by EPR in 1967, whereas the dinuclear nature of the Cu_A site was not universally accepted until oxidase crystal structures were published in 1995. There are negative redox interactions between cytochrome a and the other redox sites in the oxidase, so that the reduction potential of a particular site depends on the redox states of the other sites. Calculated electron-tunneling pathways for internal electron transfer in the oxidase indicate that the coupling-limited rates are 9×10⁵ (Cu _A a) and 7×10⁶ s^–1 (a a ₃); these calculations are in reasonable agreement with experimental rates, after corrections are made for driving force and reorganization energy. The best Cu_A-a pathway starts from the ligand His204 and not from the bridging sulfur of Cys196, and an efficient a-a ₃ path involves the heme ligands His378 and His376 as well as the intervening Phe377 residue. All direct paths from Cu_A to a ₃ are poor, indicating that direct Cu_A a ₃ electron transfer is much slower than the Cu_A a reaction. The pathways model suggests a means for gating the electron flow in redox-linked proton pumps.     

Defects in Cu(In,Ga)Se2 Chalcopyrite Semiconductors: A Comparative Study of Material Properties,Defect States,and Photovoltaic Performance

Understanding defects in Cu(In,Ga)(Se,S)₂ (CIGS), especially correlating changes in the film formation process with differences in material properties, photovoltaic (PV) device performance, and defect levels extracted from admittance spectroscopy, is a critical but challenging undertaking due to the complex nature of this polycrystalline compound semiconductor. Here we present a systematic comparative study wherein varying defect density levels in CIGS films were intentionally induced by growing CIGS grains using different selenium activity levels. Material characterization results by techniques including X‐ray diffraction, scanning electron microscopy, transmission electron microscopy, secondary ion mass spectrometry, X‐ray photoelectron spectroscopy, and medium energy ion scattering indicate that this process variation, although not significantly affecting CIGS grain structure, crystal orientation, or bulk composition, leads to enhanced formation of a defective chalcopyrite layer with high density of indium or gallium at copper antisite defects ((In, Ga)_Cu) near the CIGS surface, for CIGS films grown with insufficient selenium supply. This defective layer or the film growth conditions associated with it is further linked with observed current‐voltage characteristics, including rollover and crossover behavior, and a defect state at around 110 meV (generally denoted as the N1 defect) commonly observed in admittance spectroscopy. The impact of the (In, Ga)_Cu defects on device PV performance is also established.     

Suppressing Interfacial Dipoles to Minimize Open‐Circuit Voltage Loss in Quantum Dot Photovoltaics

Quantum‐dot (QD) photovoltaics (PVs) offer promise as energy‐conversion devices; however, their open‐circuit‐voltage (V_OC) deficit is excessively large. Previous work has identified factors related to the QD active layer that contribute to V_OC loss, including sub‐bandgap trap states and polydispersity in QD films. This work focuses instead on layer interfaces, and reveals a critical source of V_OC loss: electron leakage at the QD/hole‐transport layer (HTL) interface. Although large‐bandgap organic materials in HTL are potentially suited to minimizing leakage current, dipoles that form at an organic/metal interface impede control over optimal band alignments. To overcome the challenge, a bilayer HTL configuration, which consists of semiconducting alpha‐sexithiophene (α‐6T) and metallic poly(3,4‐ethylenedioxythiphene) polystyrene sulfonate (PEDOT:PSS), is introduced. The introduction of the PEDOT:PSS layer between α‐6T and Au electrode suppresses the formation of undesired interfacial dipoles and a Schottky barrier for holes, and the bilayer HTL provides a high electron barrier of 1.35 eV. Using bilayer HTLs enhances the V_OC by 74 mV without compromising the J_SC compared to conventional MoO₃ control devices, leading to a best power conversion efficiency of 9.2% (>40% improvement relative to relevant controls). Wider applicability of the bilayer strategy is demonstrated by a similar structure based on shallow lowest‐unoccupied‐molecular‐orbital (LUMO) levels.     

Synthesis of ZnSe and ZnSe:Cu quantum dots by a room temperature photochemical (UV‐assisted) approach using Na2SeO3 as Se source and investigating optical properties

In this study, ZnSe and ZnSe:Cu quantum dots (QDs) were synthesized using Na₂SeO₃ as the Se source by a rapid and room temperature photochemical (UV‐assisted) approach. Thioglycolic acid (TGA) was employed as the capping agent and UV illumination activated the chemical reactions. Synthesized QDs were successfully characterized using X‐ray diffraction (XRD), transmission electron microscopy (TEM), photoluminescence (PL) and UV–visible (UV–vis) spectroscopy, Fourier transform‐infrared (FT‐IR), and energy dispersive X‐ray spectroscopy (EDX). XRD analysis demonstrated the cubic zinc blend phase QDs. TEM images indicated that round‐shaped particles were formed, most of which had a diameter of about 4 nm. The band gap of the ZnSe QDs was higher than that for ZnSe in bulk. PL spectra indicated an emission with three peaks related to the excitonic, surface trap states and deep level (DL) states. The band gap and QD emission were tunable only by UV illumination time during synthesis. ZnSe:Cu showed green emission due to transition of electrons from the Conduction band (CB) or surface trap states to the ²T₂ acceptor levels of Cu²⁺. The emission was increased by increasing the Cu²⁺ ion concentration, such that the optimal value of PL intensity was obtained for the nominal mole ratio of Cu:Zn 1.5%.     

Tailoring Triple‐Anion Perovskite Material for Indoor Light Harvesting with Restrained Halide Segregation and Record High Efficiency Beyond 36%

Indoor photovoltaics are promising to enable self‐powered electronic devices for the Internet of Things. Here, reported is a triple‐anion CH₃NH₃PbI_2?xBrCl_x perovskite film, of which the bandgap is specially designed for indoor light harvesting to achieve a record high efficiency of 36.2% with distinctive high open circuit voltage (V_oc) of 1.028 V under standard 1000 lux fluorescent light. The involvement of both bromide and chloride suppresses the trap‐states and nonradiative recombination loss, exhibiting a remarkable ideality factor of 1.097. The introduction of chloride successfully restrains the halide segregation of iodide and bromide, stabilizing the triple‐anion perovskite film. The devices show an excellent long‐term performance, sustaining over 95% of original efficiency under continuous light soaking over 2000 h. These findings show the importance and potential of I/Br/Cl triple‐anion perovskite with tailored bandgap and suppressed trap‐states in stable and efficient indoor light recycling.     

Insights into the Enhanced Cycle and Rate Performances of the F‐Substituted P2‐Type Oxide Cathodes for Sodium‐Ion Batteries

A series of F‐substituted Na_2/3Ni_1/3Mn_2/3O_2?xF_x (x = 0, 0.03, 0.05, 0.07) cathode materials have been synthesized and characterized by solid‐state ¹⁹F and ²³Na NMR, X‐ray photoelectron spectroscopy, and neutron diffraction. The underlying charge compensation mechanism is systematically unraveled by X‐ray absorption spectroscopy and electron energy loss spectroscopy (EELS) techniques, revealing partial reduction from Mn⁴⁺ to Mn³⁺ upon F‐substitution. It is revealed that not only Ni but also Mn participates in the redox reaction process, which is confirmed for the first time by EELS techniques, contributing to an increase in discharge specific capacity. The detailed structural transformations are also revealed by operando X‐ray diffraction experiments during the intercalation and deintercalation process of Na⁺, demonstrating that the biphasic reaction is obviously suppressed in the low voltage region via F‐substitution. Hence, the optimized sample with 0.05 mol f.u.^?1 fluorine substitution delivers an ultrahigh specific capacity of 61 mAh g^?1 at 10 C after 2000 cycles at 30 °C, an extraordinary cycling stability with a capacity retention of 75.6% after 2000 cycles at 10 C and 55 °C, an outstanding full battery performance with 89.5% capacity retention after 300 cycles at 1 C. This research provides a crucial understanding of the influence of F‐substitution on the crystal structure of the P2‐type materials and opens a new avenue for sodium‐ion batteries.     

Why are Hot Holes Easier to Extract than Hot Electrons from Methylammonium Lead Iodide Perovskite?

Charge‐carriers photoexcited above a semiconductor's bandgap rapidly thermalize to the band‐edge. The cooling of these difficult to collect “hot” carriers caps the available photon energy that solar cells–including efficient perovskite solar cells–may utilize. Here, the dynamics and efficiency of hot carrier extraction from MAPbI₃ (MA = methylammonium) perovskite by spiro‐OMeTAD (a hole‐transporting layer) and TiO₂ (an electron‐transporting layer) are investigated and explained using both ultrafast electronic spectroscopy and theoretical modeling. Time‐resolved spectroscopy reveals a quasi‐equilibrium distribution of hot carriers forming upon excess‐energy excitation of the perovskite–a distribution largely unaffected by the presence of TiO₂. In contrast, the quasi‐equilibrium distribution of hot carriers is virtually nonexistent when spiro‐OMeTAD is present, which is indicative of efficient hot hole extraction at the interface of MAPbI₃. Density functional theory calculations predict that deep energy‐levels of MAPbI₃ exhibit electronically delocalized character, with significant overlap with the localized valence band charge of the spiro‐OMeTAD molecules lying on the surface of MAPbI₃. Consequently, hot holes are easily extracted from the deep energy‐levels of MAPbI₃ by spiro‐OMeTAD. These findings uncover the origins of efficient hot hole extraction in perovskites and offer a practical blueprint for optimizing solar cell interlayers to enable hot carrier utilization.     

Improved Performance of Ternary Polymer Solar Cells Based on A Nonfullerene Electron Cascade Acceptor

Efficient ternary polymer solar cells are constructed by incorporating an electron‐deficient chromophore (5Z,5′Z)‐5,5′‐((7,7′‐(4,4,9,9‐tetrakis(4‐hexylphenyl)‐4,9‐dihydro‐s‐indaceno[1,2‐b:5,6‐b′]dithiophene‐2,7‐diyl)bis(6‐fluorobenzo[c][1,2,5]thiadiazole‐7,4‐diyl))bis(methanylylidene))bis(3‐ethyl‐2‐thioxothiazolidin‐4‐one) (IFBR) as an additional component into the bulk‐heterojunction film that consists of a wide‐bandgap conjugated benzodithiophene‐alt‐difluorobenzo[1,2,3]triazole based copolymer and a fullerene acceptor. With respect to the binary blend films, the incorporation of a certain amount of IFBR leads to simultaneously enhanced absorption coefficient, obviously extended absorption band, and improved open‐circuit voltage. Of particular interest is that devices based on ternary blend film exhibit much higher short‐circuit current densities than the binary counterparts, which can be attributed to the extended absorption profiles, enhanced absorption coefficient, favorable film morphology, as well as formation of cascade energy level alignment that is favorable for charge transfer. Further investigation indicates that the ternary blend device exhibits much shorter charge carrier extraction time, obviously reduced trap density and suppressed trap‐assisted recombination, which is favorable for achieving high short‐circuit current. The combination of these beneficial aspects leads to a significantly improved power conversion efficiency of 8.11% for the ternary device, which is much higher than those obtained from the binary counterparts. These findings demonstrate that IFBR can be a promising electron‐accepting material for the construction of ternary blend films toward high‐performance polymer solar cells.     

Targeting Ideal Dual‐Absorber Tandem Water Splitting Using Perovskite Photovoltaics and CuInxGa1‐xSe2 Photocathodes

Efficient sunlight‐driven water splitting devices can be achieved by pairing two absorbers of different optimized bandgaps in an optical tandem design. With tunable absorption ranges and cell voltages, organic–inorganic metal halide perovskite solar cells provide new opportunities for tailoring top absorbers for such devices. In this work, semitransparent perovskite solar cells are developed for use as the top cell in tandem with a smaller bandgap photocathode to enable panchromatic harvesting of the solar spectrum. A new CuIn_xGa_1‐xSe₂ multilayer photocathode is designed, exhibiting excellent performance for photoelectrochemical water reduction and representing a near‐ideal bottom absorber. When pairing it below a semitransparent CH₃NH₃PbBr₃‐based solar cell, a solar‐to‐hydrogen efficiency exceeding 6% is achieved, the highest value yet reported for a photovoltaic–photoelectrochemical device utilizing a single‐junction solar cell as the bias source under one sun illumination. The analysis shows that the efficiency can reach more than 20% through further optimization of the perovskite top absorber.     

Energy Dispersive X-ray Tomography for 3D Elemental Mapping of Individual Nanoparticles

Energy dispersive X-ray spectroscopy within the scanning transmission electron microscope (STEM) provides accurate elemental analysis with high spatial resolution, and is even capable of providing atomically resolved elemental maps. In this technique, a highly focused electron beam is incident upon a thin sample and the energy of emitted X-rays is measured in order to determine the atomic species of material within the beam path. This elementally sensitive spectroscopy technique can be extended to three dimensional tomographic imaging by acquiring multiple spectrum images with the sample tilted along an axis perpendicular to the electron beam direction.Elemental distributions within single nanoparticles are often important for determining their optical, catalytic and magnetic properties. Techniques such as X-ray tomography and slice and view energy dispersive X-ray mapping in the scanning electron microscope provide elementally sensitive three dimensional imaging but are typically limited to spatial resolutions of > 20 nm. Atom probe tomography provides near atomic resolution but preparing nanoparticle samples for atom probe analysis is often challenging. Thus, elementally sensitive techniques applied within the scanning transmission electron microscope are uniquely placed to study elemental distributions within nanoparticles of dimensions 10-100 nm.Here, energy dispersive X-ray (EDX) spectroscopy within the STEM is applied to investigate the distribution of elements in single AgAu nanoparticles. The surface segregation of both Ag and Au, at different nanoparticle compositions, has been observed.     

Microstructure of Nanoscaled La0.6Sr0.4CoO3‐δ Cathodes for Intermediate‐Temperature Solid Oxide Fuel Cells

Nanocrystalline La_1‐xSr_xCoO_3‐δ (LSC) thin films with a nominal Sr‐content of x = 0.4 were deposited on Ce_0.9Gd_0.1O_1.95 electrolyte substrates using a low temperature sol‐gel process. The structural and chemical properties of the LSC thin films were studied after thermal treatment, which included a calcination step and a variable, extended annealing time at 700 °C or 800 °C. Transmission electron microscopy combined with selected‐area electron diffraction, energy‐dispersive X‐ray spectrometry, and scanning transmission electron microscopy tomography was applied for the investigation of grain size, porosity, microstructure, and analysis of the local chemical composition and element distribution on the nanoscale. The area specific resistance (ASR) values of the thin film LSC cathodes, which include the lowest ASR value reported so far (ASR_chem = 0.023 Ωcm² at 600 °C) can be interpreted on the basis of the structural and chemical characterization.     

A Small Molecule Non‐fullerene Electron Acceptor for Organic Solar Cells

Organic bulk heterojunction photovoltaic devices predominantly use the fullerene derivatives [C60]PCBM and [C70]PCBM as the electron accepting component. This report presents a new organic electron accepting small molecule 2‐[{7‐(9,9‐di‐n‐propyl‐9H‐fluoren‐2‐yl)benzo[c][1,2,5]thiadiazol‐4‐yl}methylene]malononitrile (K12) for organic solar cell applications. It can be processed by evaporation under vacuum or by solution processing to give amorphous thin films and can be annealed at a modest temperature to give films with much greater order and enhanced charge transport properties. The molecule can efficiently quench the photoluminescence of the donor polymer poly(3‐n‐hexylthiophene‐2,5‐diyl) (P3HT) and time resolved microwave conductivity measurements show that mobile charges are generated indicating that a truly charge separated state is formed. The power conversion efficiencies of the photovoltaic devices are found to depend strongly on the acceptor packing. Optimized K12:P3HT bulk heterojunction devices have efficiencies of 0.73±0.01% under AM1.5G simulated sunlight. The efficiencies of the devices are limited by the level of crystallinity and nanoscale morphology that was achievable in the blend with P3HT.     

Nanoscale Microstructure and Chemistry of Cu2ZnSnS4/CdS Interface in Kesterite Cu2ZnSnS4 Solar Cells

Sulfurization with various atmosphere and postheat treatments has been reported for earth abundant kesterite Cu₂ZnSnS₄ (CZTS) preparation as cost‐effective material for next‐generation solar cells. A full understanding of the nanoscale microstructure and chemistry of CZTS/CdS interface obtained from these different fabrication routes is currently lacking, yet is critical to developing optimal processing routes for high‐performance kesterite solar cells. Here, the first detailed investigation of the interfacial microstructure and chemistry of CdS/Cu₂ZnSnS₄ heterojunctions is presented. For CZTS obtained from sulfurization in a sulfur‐only atmosphere where highly defective surfaces are present, air annealing followed by etching in the initial stage of chemical bath deposition (CBD) process can effectively eliminate interfacial defects and allow the epitaxial growth of CBD‐CdS, improving the minority lifetime, open circuit voltage (V_OC), and fill factor (FF) of the devices, while blocking Cd diffusion and deteriorating short circuit current (J_sc). For CZTS from sulfurization in a combined sulfur and SnS atmosphere where CBD‐CdS can directly epitaxially grow on CZTS and Cd‐diffusion is clearly observed, associated devices show the longest lifetime and the highest efficiency of 8.76%. Epitaxial growth of CdS and Cd diffusion into CZTS are found to be two crucial features minimizing interfacial recombination and achieving high‐efficiency devices. This will not only enhance the understanding of the device structure and physics of kesterite based solar cells, but also provide an effective way for designing other chalcogenide heterojunction solar cells.     

Simultaneous Contact and Grain‐Boundary Passivation in Planar Perovskite Solar Cells Using SnO2‐KCl Composite Electron Transport Layer

The performance of perovskite solar cells is sensitive to detrimental defects, which are prone to accumulate at the interfaces and grain boundaries of bulk perovskite films. Defect passivation at each region will lead to reduced trap density and thus less nonradiative recombination loss. However, it is challenging to passivate defects at both the grain boundaries and the bottom charge transport layer/perovskite interface, mainly due to the solvent incompatibility and complexity in perovskite formation. Here SnO₂‐KCl composite electron transport layer (ETL) is utilized in planar perovskite solar cells to simultaneously passivate the defects at the ETL/perovskite interface and the grain boundaries of perovskite film. The K and Cl ions at the ETL/perovskite interface passivate the ETL/perovskite contact. Meanwhile, K ions from the ETL can diffuse through the perovskite film and passivate the grain boundaries. An enhancement of open‐circuit voltage from 1.077 to 1.137 V and a corresponding power conversion efficiency increasing from 20.2% to 22.2% are achieved for the devices using SnO₂‐KCl composite ETL. The composite ETL strategy reported herein provides an avenue for defect passivation to further increase the efficiency of perovskite solar cells.     

Absence of Charge Transfer State Enables Very Low VOC Losses in SWCNT:Fullerene Solar Cells

Current state‐of‐the‐art organic solar cells (OSCs) still suffer from high losses of open‐circuit voltage (V_OC). Conventional polymer:fullerene solar cells usually exhibit bandgap to V_OC losses greater than 0.8 V. Here a detailed investigation of V_OC is presented for solution‐processed OSCs based on (6,5) single‐walled carbon nanotube (SWCNT): [6,6]‐phenyl‐C₇₁‐butyric acid methyl ester active layers. Considering the very small optical bandgap of only 1.22 eV of (6,5) SWCNTs, a high V_OC of 0.59 V leading to a low E_gap/q ? V_OC = 0.63 V loss is observed. The low voltage losses are partly due to the lack of a measurable charge transfer state and partly due to the narrow absorption edge of SWCNTs. Consequently, V_OC losses attributed to a broadening of the band edge are very small, resulting in V_OC,SQ ? V_OC,rad = 0.12 V. Interestingly, this loss is mainly caused by minor amounts of SWCNTs with smaller bandgaps as well as (6,5) SWCNT trions, all of which are experimentally well resolved employing Fourier transform photocurrent spectroscopy. In addition, the low losses due to band edge broadening, a very low voltage loss are also found due to nonradiative recombination, ΔV_OC,nonrad = 0.26 V, which is exceptional for fullerene‐based OSCs.     

Extended Light Harvesting with Dual Cu2O‐Based Photocathodes for High Efficiency Water Splitting

Cu₂O is one of the most promising light absorbing materials for solar energy conversion. Previous studies with Cu₂O for water splitting usually deliver high photocurrent or high photovoltage, but not both. Here, a Cu₂O/Ga₂O₃/TiO₂/RuO_x photocathode that benefits from a high quality thermally oxidized Cu₂O layer and good band alignment of the Ga₂O₃ buffer layer is reported, yielding a photocurrent of 6 mA cm^?2 at 0 V versus reversible hydrogen electrode (RHE), an onset potential of 0.9 V versus RHE, and 3.5 mA cm^?2 at 0.5 V versus RHE. The quantum efficiency spectrum (incident photon to current efficiency, IPCE) reveals a dramatically improved green/red response and a decreased blue response compared with electrodeposited Cu₂O films. Light intensity dependence and photocurrent transient studies enable the identification of the limitations in the performance. Due to the complementary IPCE curves of thermally oxidized and electrodeposited Cu₂O photocathodes, a dual photocathode is fabricated to maximize the absorption over the entire range of above band gap radiation. Photocurrents of 7 mA cm^?2 at 0 V versus RHE are obtained in the dual photocathodes, with an onset potential of 0.9 V versus RHE and a thermodynamically based energy conversion efficiency of 1.9%.