In Situ Grain Boundary Functionalization for Stable and Efficient Inorganic CsPbI2Br Perovskite Solar Cells

The phase instability and large energy loss are two obstacles to achieve stable and efficient inorganic‐CsPbI_3?xBr_x perovskite solar cells. In this work, stable cubic perovskite (α)‐phase CsPbI₂Br is successfully achieved by Pb(Ac)₂ functioning at the grain boundary under low temperature. Ac^? strongly coordinates with CsPbI₂Br to stabilize the α‐phase and also make the grain size smaller and film uniform by fast nucleation. PbO is formed in situ at the grain boundary by decomposing Pb(Ac)₂ at high‐temperature annealing. The semiconducting PbO effectively passivates the surface states, reduces the interface recombination, and promotes the charge transport in CsPbI₂Br perovskite solar cells. A 12% efficiency and good stability are obtained for in situ PbO‐passivated CsPbI₂Br solar cells, while Pb(Ac)₂‐passivated device exhibits 8.7% performance and the highest stability, much better than the control device with 8.5% performance and inferior stability. This article highlights the extrinsic ionic grain boundary functionalization to achieve stable and efficient inorganic CsPbI_3?xBr_x materials and the devices.     

High‐Efficiency CsPbI2Br Perovskite Solar Cells with Dopant‐Free Poly(3‐hexylthiophene) Hole Transporting Layers

CsPbI₂Br is emerging as a promising all‐inorganic material for perovskite solar cells (PSCs) due to its more stable lattice structure and moisture resistance compared to CsPbI₃, although its device performance is still much behind this counterpart. Herein, a preannealing process is developed and systematically investigated to achieve high‐quality CsPbI₂Br films by regulating the nucleation and crystallization of perovskite. The preannealing temperature and time are specifically optimized for a dopant‐free poly(3‐hexylthiophene) (P3HT)‐based device to target dopant‐induced drastic performance degradation for spiro‐OMeTAD‐based devices. The resulting P3HT‐based device exhibits comparable power conversion efficiency (PCE) to spiro‐OMeTAD‐based devices but much enhanced ambient stability with over 95% PCE after 1300 h. A diphenylamine derivative is introduced as a buffer layer to improve the energy‐level mismatch between CsPbI₂Br and P3HT. A record‐high PCE of 15.50% for dopant‐free P3HT‐based CsPbI₂Br PSCs is achieved by alleviating the open‐circuit voltage loss with the buffer layer. These results demonstrate that the preannealing processing together with a suitable buffer layer are applicable strategies for developing dopant‐free P3HT PSCs with high efficiency and stability.     

Precursor Engineering for Ambient‐Compatible Antisolvent‐Free Fabrication of High‐Efficiency CsPbI2Br Perovskite Solar Cells

High temperature stable inorganic CsPbX₃ (X: I, Br, or mixed halides) perovskites with their bandgap tailored by tuning the halide composition offer promising opportunities in the design of ideal top cells for high‐efficiency tandem solar cells. Unfortunately, the current high‐efficiency CsPbX₃ perovskite solar cells (PSCs) are prepared in vacuum, a moisture‐free glovebox or other low‐humidity conditions due to their poor moisture stability. Herein, a new precursor system (HCOOCs, HPbI₃, and HPbBr₃) is developed to replace the traditional precursors (CsI, PbI₂, and PbBr₂) commonly used for solar cells of this type. Both the experiments and calculations reveal that a new complex (HCOOH?Cs⁺) is generated in this precursor system. The new complex is not only stable against aging in humid air ambient at 91% relative humidity, but also effectively slows the perovskite crystallization, making it possible to eliminate the popular antisolvent used in the perovskite CsPbI₂Br film deposition. The CsPbI₂Br PSCs based on the new precursor system achieve a champion efficiency of 16.14%, the highest for inorganic PSCs prepared in ambient air conditions. Meanwhile, high air stability is demonstrated for an unencapsulated CsPbI₂Br PSC with 92% of the original efficiency remaining after more than 800 h aging in ambient air.     

A Novel Anion Doping for Stable CsPbI2Br Perovskite Solar Cells with an Efficiency of 15.56% and an Open Circuit Voltage of 1.30 V

The Cs‐based inorganic perovskite solar cells (PSCs), such as CsPbI₂Br, have made a striking breakthrough with power conversion efficiency (PCE) over 16% and potential to be used as top cells for tandem devices. Herein, I^? is partially replaced with the acetate anion (Ac^?) in the CsPbI₂Br framework, producing multiple benefits. The Ac^? doping can change the morphology, electronic properties, and band structure of the host CsPbI₂Br film. The obtained CsPbI_2?x Br(Ac)_x perovskite films present lower trap densities, longer carrier lifetimes, and fast charge transportation compared to the host CsPbI₂Br films. Interestingly, the CsPbI_2?x Br(Ac)_x PSCs exhibit a maximum PCE of 15.56% and an ultrahigh open circuit voltage (V_oc) of 1.30 V without sacrificing photocurrent. Notably, such a remarkable V_oc is among the highest values of the previously reported CsPbI₂Br PSCs, while the PCE far exceeds all of them. In addition, the obtained CsPbI_2?x Br(Ac)_x PSCs exhibit high reproducibility and good stability. The stable CsPbI_2?x Br(Ac)_x PSCs with high V_oc and PCE are desirable for tandem solar cell applications.     

Structurally Reconstructed CsPbI2Br Perovskite for Highly Stable and Square‐Centimeter All‐Inorganic Perovskite Solar Cells

Although all‐inorganic perovskite solar cells (PSCs) demonstrate high thermal stability, cesium‐lead halide perovskites with high iodine content suffer from poor stability of the black phase (α‐phase). In this study, it is demonstrated that incorporating InCl₃ into the host perovskite lattice helps to inhibit the formation of yellow phase (δ‐phase) perovskite and thereby enhances the long‐term ambient stability. The enhanced stability is achieved by a strategy for the structural reconstruction of CsPbI₂Br perovskite by means of In³⁺ and Cl^? codoping, which gives rise to a significant improvement in the overall spatial symmetry with a closely packed atom arrangement due to the crystal structure transformation from orthorhombic (Pnma) to cubic (Pm‐3m). In addition, a novel thermal radiation heating method that further improves the uniformity of the perovskite thin films is presented. This approach enables the construction of all‐inorganic InCl₃:CsPbI₂Br PSCs with a champion power conversion efficiency of 13.74% for a small‐area device (0.09 cm²) and 11.4% for a large‐area device (1.00 cm²).     

Enhancing Optical,Electronic, Crystalline,and Morphological Properties of Cesium Lead Halide by Mn Substitution for High‐Stability All‐Inorganic Perovskite Solar Cells with Carbon Electrodes

In this work all‐inorganic perovskite CsPbIBr₂ are doped with Mn to compensate their shortcomings in band structure for the application of perovskite solar cells (PSCs). The novel Mn‐doped all‐inorganic perovskites, CsPb_1?xMn_xI_1+2xBr_2?2x, are prepared in ambient atmosphere. As the concentration of Mn²⁺ ions increases, the bandgaps of CsPb_1?xMn_xI_1+2xBr_2?2x decrease from 1.89 to 1.75 eV. Additionally, when the concentration of Mn dopants is appropriate, this novel Mn‐doped all‐inorganic perovskite film shows better crystallinity and morphology than its undoped counterpart. These advantages alleviate the energy loss in hole transfer and facilitate the charge‐transfer in perovskites, therefore, PSCs based on these novel CsPb_1?xMn_xI_1+2xBr_2?2x perovskite films display better photovoltaic performance than the undoped CsPbIBr₂ perovskite films. The reference CsPbIBr₂ cell reaches a power conversion efficiency (PCE) of 6.14%, comparable with the previous reports. The CsPb_1?xMn_xI_1+2xBr_2?2x cells reach the highest PCE of 7.36% (when x = 0.005), an increase of 19.9% in PCE. Furthermore, the encapsulated CsPb_0.995Mn_0.005I_1.01Br_1.99 cells exhibit good stability in ambient atmosphere. The storage stability measurements on the encapsulated PSCs reveal that PCE is dropped by only 8% of the initial value after >300 h in ambient. Such improved efficiency and stability are achieved using low‐cost carbon electrodes (without expensive hole transport materials and Au electrodes).     

Morphology Controlling of All‐Inorganic Perovskite at Low Temperature for Efficient Rigid and Flexible Solar Cells

All‐inorganic cesium lead halide (CsPbX₃) perovskites have emerged as promising photovoltaic materials owing to their superior thermal stability compared to traditional organic–inorganic hybrid counterparts. However, the CsPbX₃ perovskites generally need to be prepared at high‐temperature, which restricts their application in multilayer or flexible solar cells. Herein, the formation of CsPbX₃ perovskites at room‐temperature (RT) induced by dimethylsulphoxide (DMSO) coordination is reported. It is further found that a RT solvent (DMSO) annealing (RTSA) treatment is valid to control the perovskite crystallization dynamics, leading to uniform and void‐free films, and consequently a maximum power conversion efficiency (PCE) of 6.4% in the device indium tin oxide (ITO)/NiO _x /RT‐CsPbI₂Br/C₆₀/Bathocuproine (BCP)/Ag, which is, as far as it is known, the first report of RT solution‐processed CsPbX₃‐based perovskite solar cells (PSCs). Moreover, the efficiency can be boosted up to 10.4% by postannealing the RTSA‐treated perovskite film at an optimal temperature of 120 °C. Profiting from the moderate temperature, flexible PSCs are also demonstrated with a maximum PCE of 7.3% for the first time. These results may stimulate further development of all‐inorganic CsPbX₃ perovskites and their application in flexible electronics.     

14.1% CsPbI3 Perovskite Quantum Dot Solar Cells via Cesium Cation Passivation

Surface manipulation of quantum dots (QDs) has been extensively reported to be crucial to their performance when applied into optoelectronic devices, especially for photovoltaic devices. In this work, an efficient surface passivation method for emerging CsPbI₃ perovskite QDs using a variety of inorganic cesium salts (cesium acetate (CsAc), cesium idodide (CsI), cesium carbonate (Cs₂CO₃), and cesium nitrate (CsNO₃)) is reported. The Cs‐salts post‐treatment can not only fill the vacancy at the CsPbI₃ perovskite surface but also improve electron coupling between CsPbI₃ QDs. As a result, the free carrier lifetime, diffusion length, and mobility of QD film are simultaneously improved, which are beneficial for fabricating high‐quality conductive QD films for efficient solar cell devices. After optimizing the post‐treatment process, the short‐circuit current density and fill factor are significantly enhanced, delivering an impressive efficiency of 14.10% for CsPbI₃ QD solar cells. In addition, the Cs‐salt‐treated CsPbI₃ QD devices exhibit improved stability against moisture due to the improved surface environment of these QDs. These findings will provide insight into the design of high‐performance and low‐trap‐states perovskite QD films with desirable optoelectronic properties.     

Halogen Engineering for Operationally Stable Perovskite Solar Cells via Sequential Deposition

The performance of perovskite solar cells (PSCs) relies on the synthesis method and chemical composition of the perovskite materials. So far, PSCs that have adopted two‐step sequential deposited perovskite with the state‐of‐art composition (FAPbI₃)_1?x(MAPbBr₃)_x (x < 0.05) have achieved record power conversion efficiency (PCE), while their one‐step antisolvent dripping counterparts with typical composition Cs_0.05FA_0.81MA_0.14Pb(I_0.85Br_0.15)₃ with more bromine have exhibited much better long‐term operational stability. Thus, halogen engineering that aims to elevate bromine content in sequential deposited perovskite film would push operational stability of PSCs toward that of antisolvent dripping deposited perovskite materials. Here, a Br‐rich seeding growth method is devised and perovskite seed solution with high bromine content is introduced into a PbI₂ precursor, leading to bromine incorporation in the resulting perovskite film. Photovoltaic devices fabricated by Br‐rich seeding growth method exhibit a PCE of 21.5%, similar to 21.6% for PSCs having lower bromine content. Whereas, the operational stability of PSCs with higher bromine content is significantly enhanced, with over 80% of initial PCE retained after 500 h tracking at maximum power point under 1‐sun illumination. This work highlights the vital importance of halogen composition for the operational stability of PSCs, and introduces an effective way to incorporate bromine into mixed‐cation‐halide perovskite film via sequential deposition method.     

Inorganic CsPb1−xSnxIBr2 for Efficient Wide‐Bandgap Perovskite Solar Cells

Recently, the stability of organic–inorganic perovskite thin films under thermal, photo, and moisture stresses has become a major concern for further commercialization due to the high volatility of the organic cations in the prototype perovskite composition (CH₃NH₃PbI₃). All inorganic cesium (Cs) based perovskite is an alternative to avoid the release or decomposition of organic cations. Moreover, substituting Pb with Sn in the organic–inorganic lead halide perovskites has been demonstrated to narrow the bandgap to 1.2–1.4 eV for high‐performance perovskite solar cells. In this work, a series of CsPb_1?xSn_xIBr₂ perovskite alloys via one‐step antisolvent method is demonstrated. These perovskite films present tunable bandgaps from 2.04 to 1.64 eV. Consequently, the CsPb_0.75Sn_0.25IBr₂ with homogeneous and densely crystallized morphology shows a remarkable power conversion efficiency of 11.53% and a high V_oc of 1.21 V with a much improved phase stability and illumination stability. This work provides a possibility for designing and synthesizing novel inorganic halide perovskites as the next generation of photovoltaic materials.     

Carrier Interfacial Engineering by Bismuth Modification for Efficient and Thermoresistant Perovskite Solar Cells

Organic–inorganic halide perovskite solar cells (PSCs) have emerged as attractive alternatives to conventional solar cells. It is still a challenge to obtain PSCs with good thermal stability and high permanence, especially at extreme outdoor temperatures. This work systematically studies the effects of Bi³⁺ modification on structural, electrical, and optical properties of perovskite films (FA_0.83MA_0.17Pb(I_0.83Br_0.17)₃) and the performance of corresponding PSCs. The results indicate that Bi³⁺ modified PSCs can achieve better thermal stability, photovoltaic response, and reproducibility compared with control cells due to the decreased grain boundaries, enhanced crystallization, and improved electron extraction from perovskite film. As a result, the modified PSC exhibits an optimized power conversion efficiency (PCE) of 19.4% compared with 18.3% for the optimized control device, accompanied by better thermoresistant ability under 100–180 °C and enhanced long‐term stability. The degradation rate of the modified device is reduced by an order of magnitude due to effective structural defect modification in perovskite photoactive layer. It could maintain more than two months at 60 °C. These results shed light on the origin of crystallization and thermal stability of perovskite films, and provide an approach to solve thermal stability issue of PSCs.     

Simultaneous Improved Performance and Thermal Stability of Planar Metal Ion Incorporated CsPbI2Br All‐Inorganic Perovskite Solar Cells Based on MgZnO Nanocrystalline Electron Transporting Layer

The high thermal stability and facile synthesis of CsPbI₂Br all‐inorganic perovskite solar cells (AI‐PSCs) have attracted tremendous attention. As far as electron‐transporting layers (ETLs) are concerned, low temperature processing and reduced interfacial recombination centers through tunable energy levels determine the feasibility of the perovskite devices. Although the TiO₂ is the most popular ETL used in PSCs, its processing temperature and moderate electron mobility hamper the performance and feasibility. Herein, the highly stable, low‐temperature processed MgZnO nanocrystal‐based ETLs for dynamic hot‐air processed Mn²⁺ incorporated CsPbI2Br AI‐PSCs are reported. By holding its regular planar “n–i–p” type device architecture, the MgZnO ETL and poly(3‐hexylthiophene‐2,5‐diyl) hole transporting layer, 15.52% power conversion efficiency (PCE) is demonstrated. The thermal‐stability analysis reveals that the conventional ZnO ETL‐based AI‐PSCs show a serious instability and poor efficiency than the Mg²⁺ modified MgZnO ETLs. The photovoltaic and stability analysis of this improved photovoltaic performance is attributed to the suitable wide‐bandgap, low ETL/perovskite interface recombination, and interface stability by Mg²⁺ doping. Interestingly, the thermal stability analysis of the unencapsulated AI‐PSCs maintains >95% of initial PCE more than 400 h at 85 °C for MgZnO ETL, revealing the suitability against thermal degradation than conventional ZnO ETL.     

Inorganic CsPbI3 Perovskite Coating on PbS Quantum Dot for Highly Efficient and Stable Infrared Light Converting Solar Cells

Solution‐processed colloidal quantum dot (CQD) solar cells harvesting the infrared part of the solar spectrum are especially interesting for future use in semitransparent windows or multilayer solar cells. To improve the device power conversion efficiency (PCE) and stability of the solar cells, surface passivation of the quantum dots is vital in the research of CQD solar cells. Herein, inorganic CsPbI₃ perovskite (CsPbI₃‐P) coating on PbS CQDs with a low‐temperature, solution‐processed approach is reported. The PbS CQD solar cell with CsPbI₃‐P coating gives a high PCE of 10.5% and exhibits remarkable stability both under long‐term constant illumination and storage under ambient conditions. Detailed characterization and analysis reveal improved passivation of the PbS CQDs with the CsPbI₃‐P coating, and the results suggest that the lattice coherence between CsPbI₃‐P and PbS results in epitaxial induced growth of the CsPbI₃‐P coating. The improved passivation significantly diminishes the sub‐bandgap trap‐state assisted recombination, leading to improved charge collection and therefore higher photovoltaic performance. This work therefore provides important insight to improve the CQD passivation by coating with an inorganic perovskite ligand for photovoltaics or other optoelectronic applications.     

Extrinsic Movable Ions in MAPbI3 Modulate Energy Band Alignment in Perovskite Solar Cells

Ionic movement is considered awful in perovskite solar cells (PSCs) for relating with the hysteresis and long‐term instability. However, the positive role of ions to enhance the energy band bending for high performance PSC is always overlooked, let alone reducing the hysteresis. In this work, LiI is doped in CH₃NH₃PbI₃. It is observed that the aggregation of Li⁺/I^? tunes the energy level of the perovskite and induces n/p doping in CH₃NH₃PbI₃, which makes charge extraction quite efficient from perovskite to both NiO and [6,6]‐phenyl‐C61‐butyric acid methyl ester (PCBM) layer. Therefore, in NiO/LiI doped perovskite/PCBM solar cells, Li⁺ and I^? modulate the interface energy band alignment to facilitate the electron/hole transport and reduce the interface energy loss. On the other hand, n/p doping enlarges Fermi energy level splitting of the PSCs to improve the photovoltage. The performance of LiI doped PSCs is much higher with reduced hysteresis compared to the undoped solar cells. This work highlights the positive effect of selective ionic doping, which is promisingly important to design the stable and efficient PSCs.     

Fabrication of Efficient and Stable CsPbI3 Perovskite Solar Cells through Cation Exchange Process

Inorganic lead halide perovskites have attracted attention due to their tolerance to higher processing temperature and higher bandgap suitable for tandem solar cell application. Not only do they improve cell stability and efficiency, they also reveal many interesting and un‐anticipated material qualities. This work reports a simple cation exchange growth (CEG) method for fabricating inorganic high‐quality cesium lead iodide (CsPbI₃) by adding methylammonium iodide (MAI) additive in the precursor. X‐ray diffraction results reveal a multi‐stage film formation process whereby i) MAPbI₃ perovskite first formed that acts as a perovskite template for ii) subsequent ion exchange whereby the MA⁺ ions in the MAPbI₃ are replaced by Cs⁺ (as temperature ramps up) and iii) form g‐phase perovskite CsPbI₃. Optical microscopy, photoluminescence, and electrical characterizations reveal that the CEG process produces high‐quality film with better absorption, uniform and dense film with better interface, lower defects, and better stability. Using the CEG approach, the power conversion efficiency of the best CsPbI₃ solar cell is significantly increased up to 14.1% for the device fabricated using 1.0 m MAI additive. The outcome is beneficial for further improvement of inorganic perovskite solar cells and their application in perovskite‐silicon tandem devices.     

Highly Air‐Stable Single‐Crystalline β‐CsPbI3 Nanorods: A Platform for Inverted Perovskite Solar Cells

The synthesis of single‐crystalline β‐CsPbI₃ perovskite nanorods (NRs) using a colloidal process is reported, exhibiting their improved photostability under 45–55% humidity. The crystal structure of CsPbI₃ NRs films is investigated using Rietveld refined X‐ray diffraction (XRD) patterns to determine crystallographic parameters and the phase transformation from orthorhombic (γ‐CsPbI₃) to tetragonal (β‐CsPbI₃) on annealing at 150 °C. Atomic resolution transmission electron microscopy images are utilized to determine the probable atomic distribution of Cs, Pb, and I atoms in a single β‐phase CsPbI₃ NR, in agreement with the XRD structure and selected area electron diffraction pattern, indicating the growth of single crystalline β‐CsPbI₃ NR. The calculation of the electronic band structure of tetragonal β‐CsPbI₃ using density functional theory (DFT) reveals a direct transition with a lower band gap and a higher absorption coefficient in the solar spectrum, as compared to its γ‐phase. An air‐stable (45–55% humidity) inverted perovskite solar cell, employing β‐CsPbI₃ NRs without any encapsulation, yields an efficiency of 7.3% with 78% enhancement over the γ‐phase, showing its potential for future low cost photovoltaic devices.     

MACl‐Assisted Ge Doping of Pb‐Hybrid Perovskite: A Universal Route to Stabilize High Performance Perovskite Solar Cells

Interfacial engineering, grain boundary, and surface passivation in organic–inorganic hybrid perovskite solar cells (HyPSCs) are effective in achieving high performance and enhanced durability. Organic additives and inorganic doping are generally used to chemically modify the surface contacting charge transport layers, and/or grain boundaries so as to reduce the defect density. Here, a simple but tricky one‐step method to dope organic–inorganic hybrid perovskite with Ge for the first time is reported. Unlike Ge doping to all‐inorganic perovskites, application of GeI₂ in organic–inorganic perovskite precursors is challenging due to the extremely poor solubility of GeI₂ in hybrid perovskite ink, leading to failure in the formation of uniform films. However, it is found that addition of methylammonium chloride (MACl) into the precursor remarkably increases the solubility of GeI₂. This MACl‐assisted Ge doping of hybrid perovskites produces high‐quality crystalline film with its surface passivated with nonvolatile GeI₂ (GeO₂) and the volatile MACl additive also improves the uniformity of GeO₂ distribution in the perovskite films. The resulting Ge‐doped mixed cation and mixed halide perovskite films with composition FA_0.83MA_0.17Ge_0.03Pb_0.97(I_0.9Br_0.1)₃ show superior photoluminescence lifetime, power conversion efficiency above 22%, and greater stability toward illumination and humidity, outperforming photovoltaic properties of HyPSCs prepared without the Ge doping.     

Interface Modification by Ionic Liquid: A Promising Candidate for Indoor Light Harvesting and Stability Improvement of Planar Perovskite Solar Cells

Organic–inorganic hybrid perovskite solar cells (PSCs) are currently attracting significant interest owing to their promising outdoor performance. However, the ability of indoor light harvesting of the perovskites and corresponding device performance are rarely reported. Here, the potential of planar PSCs in harvesting indoor light for low‐power consumption devices is investigated. Ionic liquid of 1‐butyl‐3‐methylimidazolium tetrafluoroborate ([BMIM]BF₄) is employed as a modification layer of [6,6]‐phenyl‐C61‐butyric acid methyl ester) (PCBM) in the inverted PSCs. The incorporation of [BMIM]BF₄ not only paves the interface contact between PCBM and electrode, but also facilitates the electron transport and extraction owing to the efficient passivation of the surface trap states. Moreover, [BMIM]BF₄ with excellent thermal stability can act as a protective layer by preventing the erosion of moisture and oxygen into the perovskite layer. The resulting devices present a record indoor power conversion efficiency (PCE) of 35.20% under fluorescent lamps of 1000 lux, and an impressive PCE of 19.30% under 1 sun illumination. The finding in this work verifies the excellent indoor performance of PSCs to meet the requirements of eco‐friendly economy.     

Roles of Organic Molecules in Inorganic CsPbX3 Perovskite Solar Cells

Over 25% efficiencies have been achieved by organic–inorganic hybrid perovskite solar cells (PSCs). However, their practical applications are limited by the instability of the hybrid perovskite materials. Replacing hybrid perovskites with inorganic CsPbX₃ perovskites shows great promise to address the above issue and much progress has been made. To achieve high efficiency and stable inorganic CsPbX₃ PSCs, organic molecular engineering has been playing a vital role. Herein, the progress of the organic molecular engineering in inorganic CsPbX₃ PSCs is systematically reviewed. First, structure evolution induced by organic molecular engineering for inorganic CsPbX₃ perovskites is demonstrated. Then, organic molecular engineering in CsPbX₃ PSCs is categorized and reviewed (alloying in perovskite structures, as sacrificial agents, forming 2D structures, and modifying surfaces and interfaces). Finally, future research directions are suggested to further improve the performance of inorganic PSCs.     

Quantum Well Energetics of an n = 2 Ruddlesden–Popper Phase Perovskite

A comprehensive investigation of the electronic energy levels of an n = 2 Ruddlesden–Popper phase perovskite is presented. Ultraviolet and inverse photoemission spectroscopies are used to probe the density of states in the valence and conduction bands, respectively, of the quasi‐2D perovskite, butylammonium cesium lead iodide (BA₂CsPb₂I₇). By comparing experimental spectra with calculated projected density of states, the contributions from Cs, Pb, and I to the quantum well states are identified, and distinguished from those of the organic ligand barrier layer. The ionization energy, electron affinity, and exciton binding energy of this material are derived. The energetics of the quantum well structure are discussed in terms of the number of Pb‐halide layers. The resulting energy diagram suggests that a type‐I heterojunction would be formed with the n = 1 BA₂PbI₄. Finally, surface photovoltage performed via Kelvin probe force microscopy is used to evaluate band bending at the surface of the BA₂CsPb₂I₇ thin films.