Hybrid Heterojunction and Solid‐State Photoelectrochemical Solar Cells

A hybrid heterojunction and solid‐state photoelectrochemical solar cell based on graphene woven fabrics (GWFs) and silicon is designed and fabricated. The GWFs are transferred onto n‐Si to form a Schottky junction with an embedded polyvinyl alcohol based solid electrolyte. In the hybrid solar cell, solid electrolyte serves three purposes simutaneously; it is an anti‐reflection layer, a chemical modification carrier, and a photoelectrochemical channel. The open‐circuit voltage, short‐circuit current density, and fill factor are all significantly improved, achieving an impressive power conversion efficiency of 11%. Solar cell models are constructed to confirm the hybrid working mechanism, with the heterojunction junction and photoelectrochemical effect functioning synergistically.     

Doping‐Free Asymmetrical Silicon Heterocontact Achieved by Integrating Conjugated Molecules for High Efficient Solar Cell

Organic conjugated molecule/silicon (Si) heterojunction has been widely investigated to build up an asymmetrical heterocontact for efficient photovoltaics. However, it is still unclear how the organic molecular structures can affect their electronic coupling interaction with Si. Here, two widely explored electron acceptors of poly{[N,N′‐bis(2‐octyldodecyl)‐naphthalene‐1,4,5,8‐bis(dicarboximide)‐2,6‐diyl]‐alt‐5,5′‐(2,2′‐bithiophene)} (N2200) and [6,6]‐phenyl‐C₆₁‐butyric acid methyl ester (PCBM) are used to build up asymmetrical Si heterocontact to investigate their electronic coupling interaction. It is found that PCBM displays different electronic coupling with Si from N2200, which is ascribed to their various physical distance with Si based on a systematic and detailed density functional theory calculation. Organic layer incorporation not only suppresses the surface charge recombination velocity but also leads to an Ohmic contact between Si and Al. Therefore, a doping‐free organic/Si heterojunction photovoltaic with a power conversion efficiency of 14.9% is achieved with PCBM layer. This work discloses a key factor affecting organic/Si electronic coupling interaction, which helps build up high quality Si heterocontact for solar cells and other optoelectronic devices. Furthermore, the simplified heterocontact achieved by a low temperature, solution processed, and lithography‐free steps has a dramatic improvement on conventional diffusion doped‐silicon one at high temperature.     

Conductive Hole‐Selective Passivating Contacts for Crystalline Silicon Solar Cells

Defect state passivation and conductivity of materials are always in opposition; thus, it is unlikely for one material to possess both excellent carrier transport and defect state passivation simultaneously. As a result, the use of partial passivation and local contact strategies are required for silicon solar cells, which leads to fabrication processes with technical complexities. Thus, one material that possesses both a good passivation and conductivity is highly desirable in silicon photovoltaic (PV) cells. In this work, a passivation‐conductivity phase‐like diagram is presented and a conductive‐passivating‐carrier‐selective contact is achieved using PEDOT:Nafion composite thin films. A power conversion efficiency of 18.8% is reported for an industrial multicrystalline silicon solar cell with a back PEDOT:Nafion contact, demonstrating a solution‐processed organic passivating contact concept. This concept has the potential advantages of omitting the use of conventional dielectric passivation materials deposited by costly high‐vacuum equipment, energy‐intensive high‐temperature processes, and complex laser opening steps. This work also contributes an effective back‐surface field scheme and a new hole‐selective contact for p‐type and n‐type silicon solar cells, respectively, both for research purposes and as a low‐cost surface engineering strategy for future Si‐based PV technologies.     

Improved Optics in Monolithic Perovskite/Silicon Tandem Solar Cells with a Nanocrystalline Silicon Recombination Junction

Perovskite/silicon tandem solar cells are increasingly recognized as promi­sing candidates for next‐generation photovoltaics with performance beyond the single‐junction limit at potentially low production costs. Current designs for monolithic tandems rely on transparent conductive oxides as an intermediate recombination layer, which lead to optical losses and reduced shunt resistance. An improved recombination junction based on nanocrystalline silicon layers to mitigate these losses is demonstrated. When employed in monolithic perovskite/silicon heterojunction tandem cells with a planar front side, this junction is found to increase the bottom cell photocurrent by more than 1 mA cm^?2. In combination with a cesium‐based perovskite top cell, this leads to tandem cell power‐conversion efficiencies of up to 22.7% obtained from J–V measurements and steady‐state efficiencies of up to 22.0% during maximum power point tracking. Thanks to its low lateral conductivity, the nanocrystalline silicon recombination junction enables upscaling of monolithic perovskite/silicon heterojunction tandem cells, resulting in a 12.96 cm² monolithic tandem cell with a steady‐state efficiency of 18%.     

Lithium Fluoride Based Electron Contacts for High Efficiency n‐Type Crystalline Silicon Solar Cells

Low‐resistance contact to lightly doped n‐type crystalline silicon (c‐Si) has long been recognized as technologically challenging due to the pervasive Fermi‐level pinning effect. This has hindered the development of certain devices such as n‐type c‐Si solar cells made with partial rear contacts (PRC) directly to the lowly doped c‐Si wafer. Here, a simple and robust process is demonstrated for achieving mΩ cm² scale contact resistivities on lightly doped n‐type c‐Si via a lithium fluoride/aluminum contact. The realization of this low‐resistance contact enables the fabrication of a first‐of‐its‐kind high‐efficiency n‐type PRC solar cell. The electron contact of this cell is made to less than 1% of the rear surface area, reducing the impact of contact recombination and optical losses, permitting a power conversion efficiency of greater than 20% in the initial proof‐of‐concept stage. The implementation of the LiF_x/Al contact mitigates the need for the costly high‐temperature phosphorus diffusion, typically implemented in such a cell design to nullify the issue of Fermi level pinning at the electron contact. The timing of this demonstration is significant, given the ongoing transition from p‐type to n‐type c‐Si solar cell architectures, together with the increased adoption of advanced PRC device structures within the c‐Si photovoltaic industry.     

Tantalum Nitride Electron‐Selective Contact for Crystalline Silicon Solar Cells

Minimizing carrier recombination at contact regions by using carrier‐selective contact materials, instead of heavily doping the silicon, has attracted considerable attention for high‐efficiency, low‐cost crystalline silicon (c‐Si) solar cells. A novel electron‐selective, passivating contact for c‐Si solar cells is presented. Tantalum nitride (TaN _x ) thin films deposited by atomic layer deposition are demonstrated to provide excellent electron‐transporting and hole‐blocking properties to the silicon surface, due to their small conduction band offset and large valence band offset. Thin TaN_x interlayers provide moderate passivation of the silicon surfaces while simultaneously allowing a low contact resistivity to n‐type silicon. A power conversion efficiency (PCE) of over 20% is demonstrated with c‐Si solar cells featuring a simple full‐area electron‐selective TaN_x contact, which significantly improves the fill factor and the open circuit voltage (V_oc) and hence provides the higher PCE. The work opens up the possibility of using metal nitrides, instead of metal oxides, as carrier‐selective contacts or electron transport layers for photovoltaic devices.     

Ordered Nanoscale Heterojunction Architecture for Enhanced Solution‐Based CuInGaS2 Thin Film Solar Cell Performance

Nanopatterned CuInGaS₂ (CIGS) thin films synthesized by a sol‐gel‐based solution method and a nanoimprint lithography technique to achieve simultaneous photonic and electrical enhancements in thin film solar cell applications are demonstrated. The interdigitated CIGS nanopatterns in adjacent CdS layer form an ordered nanoscale heterojunction of optical contrast to create a light trapping architecture. This architecture concomitantly leads to increased junction area between the p‐CIGS/n‐CdS interface, and thereby influences effective charge transport. The electron beam induced current and capacitance–voltage characterization further supports the large carrier collection area and small depletion region of the nanopatterned CIGS solar cell devices. This strategic geometry affords localization of incident light inside and between the nanopatterns, where created excitons are easily dissociated, and it leads to the enhanced current generation of absorbed light. Ultimately, this approach improves the efficiency of the nanopatterned CIGS solar cell by 55% compared to its planar counterpart, and offers the possibility of simultaneous management for absorption and charge transport through a nanopatterning process.     

Solution‐Based Silicon in Thin‐Film Solar Cells

Solution‐based semiconductors give rise to the next generation of thin‐film electronics. Solution‐based silicon as a starting material is of particular interest because of its favorable properties, which are already vastly used in conventional electronics. Here, the application of a silicon precursor based on neopentasilane for the preparation of thin‐film solar cells is reported for the first time, and, for the first time, a performance similar to conventional fabrication methods is demonstrated. Because three different functional layers, n‐type contact layer, intrinsic absorber, and p‐type contact layer, have to be stacked on top of each other, such a device is a very demanding benchmark test of performance of solution‐based semiconductors. Complete amorphous silicon n‐i‐p solar cells with an efficiency of 3.5% are demonstrated, which significantly exceeds previously reported values.     

Dual Functional Electron‐Selective Contacts Based on Silicon Oxide/Magnesium: Tailoring Heterointerface Band Structures while Maintaining Surface Passivation

Silicon (Si)‐based dopant‐free heterojunction solar cells (SCs) featuring carrier‐selective contacts (CSCs) have attracted considerable interest due to the extreme simplifications in their device structure and manufacturing procedure. However, these SCs are limited by the unsatisfactory contact properties on both sides of the junction, and their efficiencies are not comparable with those of commercially available Si SCs. In this report, a high‐performance silicon‐oxide/magnesium (SiO_x/Mg) electron‐selective contact (ESC) design is described. Combining an ultrathin SiO_x and a low work function Mg layer, the novel ESC simultaneously yields low recombinative and resistive losses. In addition, deposition of Mg on SiO_x relaxes the restriction on the threshold thickness of the SiO_x for electron tunneling and therefore broadens the optimization space for rear‐sided passivation. Meanwhile, hole‐selective contact with boosted light harvesting and suppressed interfacial recombination is achieved by forming a fully conformal contact between the conducting poly(3,4‐ethylene dioxythiophene): poly(styrenesulfonate) (PEDOT: PSS) and periodic Si pyramid arrays. With the double‐sided carrier‐selective contact designs, PEDOT: PSS/Si/SiO_x/Mg SCs with efficiency of 15% are finally obtained via a totally dopant‐free processing. Subsequent calculations further indicate a pathway for the improvement of these contacts toward an efficiency that is competitive with conventionally diffused pn junction SCs.     

MXene‐Contacted Silicon Solar Cells with 11.5% Efficiency

MXene, a new class of 2D materials, has gained significant attention owing to its attractive electrical conductivity, tunable work function, and metallic nature for wide range of applications. Herein, delaminated few layered Ti₃C₂T_x MXene contacted Si solar cells with a maximum power conversion efficiency (PCE) of ≈11.5% under AM1.5G illumination are demonstrated. The formation of an Ohmic junction of the metallic MXene to n⁺‐Si surface efficiently extracts the photogenerated electrons from n⁺np⁺‐Si, decreases the contact resistance, and suppresses the charge carrier recombination, giving rise to excellent open‐circuit voltage and short‐circuit current density. The rapid thermal annealing process further improves the electrical contact between Ti₃C₂T_x MXene and n⁺‐Si surface by reducing sheet resistance, increasing electrical conductivity, and decreasing cell series resistance, thus leading to a remarkable improvement in fill factor and overall PCE. The work demonstrated here can be extended to other MXene compositions as potential electrodes for developing highly performing solar cells.     

Improving Interfacial Charge Recombination in Planar Heterojunction Perovskite Photovoltaics with Small Molecule as Electron Transport Layer

Although perovskite solar cells (PSCs) have emerged as a promising alternative to widely used fossil fuels, the involved high‐temperature preparation of metal oxides as a charge transport layer in most state‐of‐the‐art PSCs has been becoming a big stumbling block for future low‐temperature and large‐scale R2R manufacturing process. Such an issue strongly encourages scientists to find new type of materials to replace metal oxides. Except for expensive PC₆₁BM with unmanageable morphology and electrical properties, the past investigation on the development of low‐temperature‐processed and highly efficient electron transport layers (ETLs) has met some mixed success. In order to further enhance the performance of all‐solution‐processed PSCs, we propose a novel n‐type sulfur‐containing small molecule hexaazatrinaphtho[2,3‐c][1,2,5]thiadiazole (HATNT) with high electron mobility up to 1.73 × 10^?2 cm² V^?1 s^?1 as an ETL in planar heterojunction PSCs. A high power conversion efficiency of 18.1% is achieved, which is fully comparable with the efficiency from the control device fabricated with PC₆₁BM as ETL. This superior performance mainly attributes from more effective suppression of charge recombination at the perovskite/HATNT interface than that between the perovskite and PC₆₁ BM. Moreover, high electron mobility and strong interfacial interaction via S? I or S? Pb bonding should be also positive factors. Significantly, our results undoubtedly enable new guidelines in exploring n‐type organic small molecules for high‐performance PSCs.     

Polymer Solar Cells with Efficiency >10% Enabled via a Facile Solution‐Processed Al‐Doped ZnO Electron Transporting Layer

A facile and low‐temperature (125 °C) solution‐processed Al‐doped ZnO (AZO) buffer layer functioning very effectively as electron accepting/hole blocking layer for a wide range of polymer:fullerene bulk heterojunction systems, yielding power conversion efficiency in excess of 10% (8%) on glass (plastic) substrates is described. The ammonia‐treatment of the aqueous AZO nanoparticle solution produces compact, crystalline, and smooth thin films, which retain the aluminum doping, and eliminates/reduces the native defects by nitrogen incorporation, making them good electron transporters and energetically matched with the fullerene acceptor. It is demonstrated that highly efficient solar cells can be achieved without the need for additional surface chemical modifications of the buffer layer, which is a common requirement for many metal oxide buffer layers to yield efficient solar cells. Also highly efficient solar cells are achieved with thick AZO films (>50 nm), highlighting the suitability of this material for roll‐to‐roll coating. Preliminary results on the applicability of AZO as electron injection layer in F8BT‐based polymer light emitting diode are also presented.     

Temperature and Humidity Stable Alkali/Alkaline‐Earth Metal Carbonates as Electron Heterocontacts for Silicon Photovoltaics

Nanometer scale interfacial layers between the metal cathode and the n‐type semiconductor play a critical role in enhancing the transport of charge carriers in and out of optoelectronic devices. Here, a range of nanoscale alkali and alkaline earth metal carbonates (i.e., potassium, rubidium, caesium, calcium, strontium, and barium) are shown to function effectively as electron heterocontacts to lightly doped n‐type crystalline silicon (c‐Si), which is particularly challenging to contact with common metals. These carbonate interlayers are shown to enhance the performance of n‐type c‐Si proof‐of‐concept solar cells up to a power conversion efficiency of ≈19%. Furthermore, these devices are thermally stable up to 350 °C and both the caesium and barium carbonates pass a standard 1000 h damp heat test, with >95% of their initial performance maintained. The temperature and humidity stable electron heterocontacts based on alkali and alkaline earth metal carbonates show a high potential for industrial feasibility and longevity for deployment in the field.     

Multifunctional Effect of p‐Doping,Antireflection, and Encapsulation by Polymeric Acid for High Efficiency and Stable Carbon Nanotube‐Based Silicon Solar Cells

Silicon solar cells among different types of solar energy harvesters have entered the commercial market owing to their high power conversion efficiency and stability. By replacing the electrode and the p‐type layer by a single layer of carbon nanotubes, the device can be further simplified. This greatly augments the attractiveness of silicon solar cells in the light of raw material shortages and the solar payback period, as well as lowering the fabrication costs. However, carbon nanotube‐based silicon solar cells still lack device efficiency and stability. These can be improved by chemical doping, antireflection coating, and encapsulation. In this work, the multifunctional effects of p‐doping, antireflection, and encapsulation are observed simultaneously, by applying a polymeric acid. This method increases the power conversion efficiency of single‐walled carbon nanotube‐based silicon solar cells from 9.5% to 14.4% and leads to unprecedented device stability of more than 120 d under severe conditions. In addition, the polymeric acid‐applied carbon nanotube‐based silicon solar cells show excellent chemical and mechanical robustness. The obtained stable efficiency stands the highest among the reported carbon nanotube‐based silicon solar cells.     

Design and Fabrication of a Precious Metal‐Free Tandem Core–Shell p+n Si/W‐Doped BiVO4 Photoanode for Unassisted Water Splitting

Tandem photoelectrochemical water splitting cells utilizing crystalline Si and metal oxide photoabsorbers are promising for low‐cost solar hydrogen production. This study presents a device design and a scalable fabrication scheme for a tandem heterostructure photoanode: p⁺n black silicon (Si)/SnO₂ interface/W‐doped bismuth vanadate (BiVO₄)/cobalt phosphate (CoPi) catalyst. The black‐Si not only provides a substantial photovoltage of 550 mV, but it also serves as a conductive scaffold to decrease charge transport pathlengths within the W‐doped BiVO₄ shell. When coupled with cobalt phosphide (CoP) nanoparticles as hydrogen evolution catalysts, the device demonstrates spontaneous water splitting without employing any precious metals, achieving an average solar‐to‐hydrogen efficiency of 0.45% over the course of an hour at pH 7. This fabrication scheme offers the modularity to optimize individual cell components, e.g., Si nanowire dimensions and metal oxide film thickness, involving steps that are compatible with fabricating monolithic devices. This design is general in nature and can be readily adapted to novel, higher performance semiconducting materials beyond BiVO₄ as they become available, which will accelerate the process of device realization.     

Quantitative Analysis and Visualized Evidence for High Charge Separation Efficiency in a Solid‐Liquid Bulk Heterojunction

In the past few decades, some novel low‐cost nanostructured devices have been explored for converting solar energy into electrical or chemical energy, such as organic photovoltaic cells, photoelectrochemical solar cells, and solar water splitting cells. Generally, higher light absorption and/or charge separation efficiency are considered as the main reasons for improved performance in a nanostructured device versus a planar structure. However, quantitative analysis and definite experimental evidence remain elusive. Here, using BiVO₄ as an example, comparable samples with porous and dense structures have been prepared by a simple method. The porous and dense films are assembled into a solid‐electrolyte bulk and planar heterojunction, respectively. Some quantitative results are obtained by decoupling photon absorption, interfacial charge transfer, and charge separation processes. These results suggest that higher charge separation efficiency is mainly responsible for enhanced performance in a solid‐electrolyte bulk heterojunction. Moreover, we also present visualized evidence to show higher charge separation efficiency comes from a shorter photo‐generated hole diffusion distance in a bulk heterojunction. These results can deepen understanding charge transfer in a bulk heterojunction and offer guidance to design a more efficient low‐cost device for solar conversion and storage.     

Four‐Terminal Perovskite/Silicon Multijunction Solar Modules

Multijunction solar cells employing perovskite and crystalline‐silicon (c‐Si) light absorbers bear the exciting potential to surpass the efficiency limit of market‐leading single‐junction c‐Si solar cells. However, scaling up this technology and maintaining high efficiency over large areas are challenging as evidenced by the small‐area perovskite/c‐Si multijunction solar cells reported so far. In this work, a scalable four‐terminal multijunction solar module design employing a 4 cm² semitransparent methylammonium lead triiodide perovskite solar module stacked on top of an interdigitated back contact c‐Si solar cell of identical area is demonstrated. With a combination of optimized transparent electrodes and efficient module design, the perovskite/c‐Si multijunction solar modules exhibit power conversion efficiencies of 22.6% on 0.13 cm² and 20.2% on 4 cm² aperture area. Furthermore, a detailed optoelectronic loss analysis along with strategies to enhance the performance is discussed.     

The Role of Photon Energy in Free Charge Generation in Bulk Heterojunction Solar Cells

To determine the role of photon energy on charge generation in bulk heterojunction solar cells, the bias voltage dependence of photocurrent for excitation with photon energies below and above the optical band gap is investigated in two structurally related polymer solar cells. Charges generated in (poly[2,6‐(4,4‐bis(2‐ethylhexyl)‐4H‐cyclopenta[2,1‐b;3,4‐b′′]dithiophene)‐alt‐4,7‐(2,1,3‐benzothia­diazole)] (C‐PCPDTBT):[6,6]‐phenyl‐C61‐butyric acid methyl ester (PCBM) solar cells via excitation of the low‐energy charge transfer (CT) state, situated below the optical band gap, need more voltage to be extracted than charges generated with excitation above the optical band gap. This indicates a lower effective binding energy of the photogenerated electrons and holes when the excitation is above the optical band gap than when excitation is to the bottom of the CT state. In blends of PCBM with the silicon‐analogue, poly[(4,4‐bis(2‐ethylhexyl)dithieno[3,2‐b:2′,3′‐d]silole)‐2,6‐diyl‐alt‐(2,1,3‐benzothiadiazole)‐4,7‐diyl] (Si‐PCPDTBT), there is no effect of the photon energy on the electric field dependence of the dissociation efficiency of the CT state. C‐PCPDTBT and Si‐PCPDTBT have very similar electronic properties, but their blends with PCBM differ in the nanoscale phase separation. The morphology is coarser and more crystalline in Si‐PCPDTBT:PCBM blends. The results demonstrate that the nanomorphological properties of the bulk heterojunction are important for determining the effective binding energy in the generation of free charges at the heterojunction.     

A Strategy to Design a Donor–π–Acceptor Polymeric Hole Conductor for an Efficient Perovskite Solar Cell

A strategy for developing a novel donor–π–acceptor conducting polymeric hole transport material ( TTB–TTQ ) based on thiophene and benzothiadiazole as an alternative to spiro‐MeOTAD is reported. The resulting polymer is highly soluble in many organic solvents and exhibits excellent film formability. The addition of lithium bis(trifluoromethanesulfonyl) imide salt and tert‐butylpyridine to TTB–TTQ results in a rough film surface with a fibril structure and improved charge transport. A perovskite solar cell with the highest power conversion efficiency (η) yet achieved in such cells, 14.1%, which is 22.6% greater than that of a device employing a spiro‐MeOTAD is demonstrated. This strategy provides a novel approach to developing solar cell materials for efficient perovskite solar cells.     

Over 17% Efficiency Stand‐Alone Solar Water Splitting Enabled by Perovskite‐Silicon Tandem Absorbers

Realizing solar‐to‐hydrogen (STH) efficiencies close to 20% using low‐cost semiconductors remains a major step toward accomplishing the practical viability of photoelectrochemical (PEC) hydrogen generation technologies. Dual‐absorber tandem cells combining inexpensive semiconductors are a promising strategy to achieve high STH efficiencies at a reasonable cost. Here, a perovskite photovoltaic biased silicon (Si) photoelectrode is demonstrated for highly efficient stand‐alone solar water splitting. A p⁺nn⁺ ‐Si/Ti/Pt photocathode is shown to present a remarkable photon‐to‐current efficiency of 14.1% under biased condition and stability over three days under continuous illumination. Upon pairing with a semitransparent mixed perovskite solar cell of an appropriate bandgap with state‐of‐the‐art performance, an unprecedented 17.6% STH efficiency is achieved for self‐driven solar water splitting. Modeling and analysis of the dual‐absorber PEC system reveal that further work into replacing the noble‐metal catalyst materials with earth‐abundant elements and improvement of perovskite fill factor will pave the way for the realization of a low‐cost high‐efficiency PEC system.