Lithium Doping to Enhance Thermoelectric Performance of MgAgSb with Weak Electron–Phonon Coupling

Despite the unfavorable band structure with twofold degeneracy at the valence band maximum, MgAgSb is still an excellent p‐type thermoelectric material for applications near room temperature. The intrinsically weak electron–phonon coupling, reflected by the low deformation potential E_def ≈ 6.3 eV, plays a crucial role in the relatively high power factor of MgAgSb. More importantly, Li is successfully doped into Mg site to tune the carrier concentration, leading to the resistivity reduction by a factor of 3 and a consequent increase in power factor by ≈30% at 300 K. Low lattice thermal conductivity can be simultaneously achieved by all‐scale hierarchical phonon scattering architecture including high density of dislocations and nanoscale stacking faults, nanoinclusions, and multiscale grain boundaries. Collectively, much higher average power factor ≈25 μW cm^?1 K^?2 with a high average ZT ≈ 1.1 from 300 to 548 K is achieved for 0.01 Li doping, which would result in a high output power density ≈1.56 W cm^?2 and leg efficiency ≈9.2% by calculations assuming cold‐side temperature T_c = 323 K, hot‐side temperature T_h = 548 K, and leg length = 2 mm.     

Controlling Metallurgical Phase Separation Reactions of the Ge0.87Pb0.13Te Alloy for High Thermoelectric Performance

We demonstrate the potential of metallurgical controlling of the phase separation reaction, by means of spark plasma sintering consolidation and subsequently controlled heat treatments sequence, for enhancement the thermoelectric properties of the p‐type Ge_0.87Pb_0.13Te composition. Very high ZTs of up to ～2, attributed to the nucleation of sub‐micron phase separation domains and to comparable sized twinning and dislocation networks features, were observed. Based on the experimentally measured transport properties, combined with the previously reported phase separated n‐type (Pb_0.95Sn_0.05Te)_0.92(PbS)_0.08 composition, a maximal efficiency value of ～11.5% was theoretically calculated. These ZT and efficiency values are among the highest reported for single composition non‐segmented bulk material legs.     

Integrating Band Structure Engineering with All‐Scale Hierarchical Structuring for High Thermoelectric Performance in PbTe System

PbTe_1?x Se_x ‐2%Na‐y%SrTe system is investigated and a high maximum ZT of 2.3 at 923 K for PbTe_0.85Se_0.15‐2%Na‐4%SrTe is reported. This is achieved by performing electronic band structures modifications as well as all‐scale hierarchical structuring and combining the two effects. It is found that high ZTs in PbTe_0.85Se_0.15‐2%Na‐4%SrTe are possible at all temperature from 300 to 873 K with an average ZT_ave of 1.23. The high performance in PbTe_1?x Se_x ‐2%Na‐y%SrTe can be achieved by either choosing PbTe‐2Na‐4SrTe or PbTe_0.85Se_0.15‐2Na as a matrix. At room temperature the carrier mobility shows negligible variations as SrTe fraction is increased, however the lattice thermal conductivity is significantly reduced from ≈1.1 to ≈0.82 W m^?1 K^?1 when 5.0% SrTe is added, correspondingly, the lattice thermal conductivity at 923 K decreases from ≈0.59 to ≈0.43 W m?¹ K^?1. The power factor maxima of PbTe_1?x Se_x ‐2Na‐4SrTe shift systematically to higher temperature with rising Se fractions due to bands divergence. The maximum power factors reach ≈27, ≈30, ≈31 μW cm^?1 K^?2 for the x = 0, 0.05, and 0.15 samples peak at 473, 573, and 623 K, respectively. The results indicate that ZT can be increased by synergistic integration of band structure engineering and all‐scale hierarchical architectures.     

Subtle Roles of Sb and S in Regulating the Thermoelectric Properties of N‐Type PbTe to High Performance

A high ZT (thermoelectric figure of merit) of ≈1.4 at 900 K for n‐type PbTe is reported, through modifying its electrical and thermal properties by incorporating Sb and S, respectively. Sb is confirmed to be an amphoteric dopant in PbTe, filling Te vacancies at low doping levels (<1%), exceeding which it enters into Pb sites. It is found that Sb‐doped PbTe exhibits much higher carrier mobility than similar Bi‐doped materials, and accordingly, delivers higher power factors and superior ZT . The enhanced electronic transport is attributed to the elimination of Te vacancies, which appear to strongly scatter n‐type charge carriers. Building on this result, the ZT of Pb_0.9875Sb_0.0125Te is further enhanced by alloying S into the Te sublattice. The introduction of S opens the bandgap of PbTe, which suppresses bipolar conduction while simultaneously increasing the electron concentration and electrical conductivity. Furthermore, it introduces point defects and induces second phase nanostructuring, which lowers the lattice thermal conductivity to ≈0.5 W m^?1 K^?1 at 900 K, making this material a robust candidate for high‐temperature (500–900 K) thermoelectric applications. It is anticipated that the insights provided here will be an important addition to the growing arsenal of strategies for optimizing the performance of thermoelectric materials.     

n‐Type SnSe2 Oriented‐Nanoplate‐Based Pellets for High Thermoelectric Performance

It is reported that electron doped n‐type SnSe₂ nanoplates show promising thermoelectric performance at medium temperatures. After simultaneous introduction of Se deficiency and Cl doping, the Fermi level of SnSe₂ shifts toward the conduction band, resulting in two orders of magnitude increase in carrier concentration and a transition to degenerate transport behavior. In addition, all‐scale hierarchical phonon scattering centers, such as point defects, nanograin boundaries, stacking faults, and the layered nanostructures, cooperate to produce very low lattice thermal conductivity. As a result, an enhanced in‐plane thermoelectric figure of merit ZT_max of 0.63 is achieved for a 1.5 at% Cl doped SnSe_1.95 pellet at 673 K, which is much higher than the corresponding in‐plane ZT of pure SnSe₂ (0.08).     

Heterogeneous Distribution of Sodium for High Thermoelectric Performance of p‐type Multiphase Lead‐Chalcogenides

Despite the effectiveness of sodium as a p‐type dopant for lead chalcogenides, its solubility is shown to be very limited in these hosts. Here, a high thermoelectric efficiency of ≈2 over a wide temperature range is reported in multiphase quaternary (PbTe)_0.65(PbS)_0.25(PbSe)_0.1 compounds that are doped with sodium at concentrations greater than the solubility limits of the matrix. Although these compounds present room temperature thermoelectric efficiencies similar to sodium doped PbTe, a dramatically enhanced Hall carrier mobility at temperatures above 600 K for heavily doped compounds results in significantly enhanced thermoelectric efficiencies at elevated temperatures. This is achieved through the composition modulation doping mechanism resulting from heterogeneous distribution of the sodium dopant between precipitates and the matrix at elevated temperatures. These results can lead to further advances in designing high performance multiphase thermoelectric materials with intrinsically heterogeneous dopant distributions.     

High Efficiency Half‐Heusler Thermoelectric Materials for Energy Harvesting

Half‐Heusler (HH) compounds have gained ever‐increasing popularity as promising high temperature thermoelectric materials. High figure of merit zT of ≈1.0 above 1000 K has recently been realized for both n‐type and p‐type HH compounds, demonstrating the realistic prospect of these high temperature compounds for high efficiency power generation. Here, recent progress in advanced fabrication techniques and the intrinsic atomic disorders in HH compounds, which are linked to the understanding of the electrical transport, is discussed. Thermoelectric transport features of n‐type ZrNiSn‐based HH alloys are particularly emphasized, which is beneficial to further improving thermoelectric performance and comprehensively understanding the underlying mechanisms in HH thermoelectric materials. The rational design and realization of new high performance p‐type Fe(V,Nb)Sb‐based HH compounds are also demonstrated. The outlook for future research directions of HH thermoelectric materials is also discussed.     

Realizing High Thermoelectric Performance in n‐Type Highly Distorted Sb‐Doped SnSe Microplates via Tuning High Electron Concentration and Inducing Intensive Crystal Defects

In this study, a record high figure of merit (ZT) of ≈1.1 at 773 K is reported in n‐type highly distorted Sb‐doped SnSe microplates via a facile solvothermal method. The pellets sintered from the Sb‐doped SnSe microplates show a high power factor of ≈2.4 µW cm^?1 K^?2 and an ultralow thermal conductivity of ≈0.17 W m^?1 K^?1 at 773 K, leading a record high ZT. Such a high power factor is attributed to a high electron concentration of 3.94 × 10¹⁹ cm^?3 via Sb‐enabled electron doping, and the ultralow thermal conductivity derives from the enhanced phonon scattering at intensive crystal defects, including severe lattice distortions, dislocations, and lattice bent, observed by detailed structural characterizations. This study fills in the gaps of fundamental doping mechanisms of Sb in SnSe system, and provides a new perspective to achieve high thermoelectric performance in n‐type polycrystalline SnSe.     

Improving Thermoelectric Performance of α‐MgAgSb by Theoretical Band Engineering Design

α‐MgAgSb is recently discovered to be a new class of thermoelectric material near room temperature. A competitive ZT of 1.4 at 525 K is achieved in Ni‐doped α‐MgAgSb, and the measured efficiency of energy conversion reaches a record value of 8.5%, which is even higher than that of the commercially applied material bismuth telluride. On the other hand, the band structure of α‐MgAgSb is believed to be unprofitable to the power factor, owing to the less degenerate valence valleys. Here, this paper reports a systematic theoretical study on the thermoelectric properties by using the electron/phonon structure and transport calculations. Based on the careful analysis of Fermi surface, a principled scheme is presented to design band engineering in α‐MgAgSb. Following the given rules, several effective dopants are predicted. As two examples, Zn‐ and Pd‐doped α‐MgAgSb are numerically confirmed to exhibit an extraordinary ZT value of 2.0 at 575 K and a high conversion efficiency of 12.6%, owing to the effects of band convergence. This work develops an applicable scheme for the purposive design of band engineering, and the idea can be simply applied to more thermoelectric materials.     

Studies on Thermoelectric Properties of n‐type Polycrystalline SnSe1‐xSx by Iodine Doping

Iodine‐doped n‐type SnSe polycrystalline by melting and hot pressing is prepared. The prepared material is anisotropic with a peak ZT of ≈0.8 at about 773 K measured along the hot pressing direction. This is the first report on thermoelectric properties of n‐type Sn chalcogenide alloys. With increasing content of iodine, the carrier concentration changed from 2.3 × 10¹⁷ cm^?3 (p‐type) to 5.0 × 10¹⁵ cm^?3 (n‐type) then to 2.0 × 10¹⁷ cm^?3 (n‐type). The decent ZT is mainly attributed to the intrinsically low thermal conductivity due to the high anharmonicity of the chemical bonds like those in p‐type SnSe. By alloying with 10 at% SnS, even lower thermal conductivity and an enhanced Seebeck coefficient were achieved, leading to an increased ZT of ≈1.0 at about 773 K measured also along the hot pressing direction.     

High Thermoelectric Performance in p‐type Polycrystalline Cd‐doped SnSe Achieved by a Combination of Cation Vacancies and Localized Lattice Engineering

Herein, a high figure of merit (ZT) of ≈1.7 at 823 K is reported in p‐type polycrystalline Cd‐doped SnSe by combining cation vacancies and localized‐lattice engineering. It is observed that the introduction of Cd atoms in SnSe lattice induce Sn vacancies, which act as p‐type dopants. A combination of facile solvothermal synthesis and fast spark plasma sintering technique boosts the Sn vacancy to a high level of ≈2.9%, which results in an optimum hole concentration of ≈2.6 × 10¹⁹ cm^?3 and an improved power factor of ≈6.9 µW cm^?1 K^?2. Simultaneously, a low thermal conductivity of ≈0.33 W m^?1 K^?1 is achieved by effective phonon scattering at localized crystal imperfections, as observed by detailed structural characterizations. Density functional theory calculations reveal that the role of Cd atoms in the SnSe lattice is to reduce the formation energy of Sn vacancies, which in turn lower the Fermi level down into the valence bands, generating holes. This work explores the fundamental Cd‐doping mechanisms at the nanoscale in a SnSe matrix and demonstrates vacancy and localized‐lattice engineering as an effective approach to boosting thermoelectric performance. The work provides an avenue in achieving high‐performance thermoelectric properties of materials.     

Increase in the Figure of Merit by Cd‐Substitution in Sn1–xPbxTe and Effect of Pb/Sn Ratio on Thermoelectric Properties

The effects of Cd‐doping on the thermoelectric properties of Sn_1–xPb_xTe are investigated and compared to the properties of the corresponding Sn_1–xPb_xTe solid solutions. The addition of Cd results in a reduction in the carrier concentration and changes in the physical properties, as well as in the conduction type of Sn_1–xPb_xTe. A significant increase in the power factor accompanied by a reduction in the thermal conductivity result in a higher figure of merit (ZT) for (Sn_1–xPb_x)_0.97Cd_0.03Te than that of undoped Sn_1–xPb_xTe. The maximum ZT (～0.7) values are observed for p‐type material with x = 0.36 at 560 K. Much higher values (ZT ～ 1.2 at 560 K for x = 0.73) are obtained on n‐type samples.     

Three‐Stage Inter‐Orthorhombic Evolution and High Thermoelectric Performance in Ag‐Doped Nanolaminar SnSe Polycrystals

The ultrahigh thermoelectric performance of SnSe‐based single crystals has attracted considerable interest in their polycrystalline counterparts. However, the temperature‐dependent structural transition in SnSe‐based thermoelectric materials and its relationship with their thermoelectric performance are not fully investigated and understood. In this work, nanolaminar SnSe polycrystals are prepared and characterized in situ using neutron and synchrotron powder diffraction measurements at various temperatures. Rietveld refinement results indicate that there is a complete inter‐orthorhombic evolution from Pnma to Cmcm by a series of layer slips and stretches along the a‐ and b‐axes over a 200 K temperature range. This phase transition leads to drastic enhancement of the carrier concentration and phonon scattering above 600 K. Moreover, the unique nanolaminar structure effectively enhances the carrier mobility of SnSe. Their grain and layer boundaries further improve the phonon scattering. These favorable factors result in a high ZT of 1.0 at 773 K for pristine SnSe polycrystals. The thermoelectric performances of polycrystalline SnSe are further improved by p‐type and n‐type dopants (i.e., doped with Ag and SnCl₂, respectively), and new records of ZT are achieved in Ag_0.015Sn_0.985Se (ZT of 1.3 at 773 K) and SnSe_0.985Cl_0.015 (ZT of 1.1 at 773 K) polycrystals.     

Significantly Enhanced Thermoelectric Properties of PEDOT:PSS Films through Sequential Post‐Treatments with Common Acids and Bases

Thermoelectric (TE) materials are important for the sustainable development because they enable the direct harvesting of low‐quality heat into electricity. Among them, conducting polymers have attracted great attention arising from their advantages, such as flexibility, nontoxicity, easy availability, and intrinsically low thermal conductivity. In this work, a novel and facile method is reported to significantly enhance the TE property of poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) films through sequential post‐treatments with common acids and bases. Compared with the as‐prepared PEDOT:PSS, both the Seebeck coefficients and electrical conductivities can be remarkably enhanced after the treatments. The oxidation level, which significantly impacts the TE property of the PEDOT:PSS films, can also be well tuned by controlling the experimental conditions during the base treatment. The optimal PEDOT:PSS films can have a Seebeck coefficient of 39.2 µV K^?1 and a conductivity of 2170 S cm^?1 at room temperature, and the corresponding power factor is 334 µW (m^?1 K^?2). The enhancement in the TE properties is attributed to the synergetic effect of high charge mobility by the acid treatment and the optimal oxidation level tuned by the base treatment.     

New Class of Ni‐Rich Cathode Materials Li[NixCoyB1−x−y]O2 for Next Lithium Batteries

A new class of layered cathodes, Li[Ni_xCo_yB_1?x?y]O₂ (NCB), is synthesized. The proposed NCB cathodes have a unique microstructure in which elongated primary particles are tightly packed into spherical secondary particles. The cathodes also exhibit a strong crystallographic texture in which the a–b layer planes are aligned along the radial direction, facilitating Li migration. The microstructure, which effectively suppresses the formation of microcracks, improves the cycling stability of the NCB cathodes. The NCB cathode with 1.5 mol% B delivers a discharge capacity of 234 mAh g^?1 at 0.1 C and retains 91.2% of its initial capacity after 100 cycles (compared to values of 229 mAh g^?1 at 0.1 C and 78.8% for pristine Li[Ni_0.9Co_0.1]O₂). This study shows the importance of controlling the microstructure to obtain the required cycling stability, especially for Ni‐rich layered cathodes, where the main cause of capacity fading is related to mechanical strain in their charged state.     

Bringing Conducting Polymers to High Order: Toward Conductivities beyond 105 S cm−1 and Thermoelectric Power Factors of 2 mW m−1 K−2

Here, an effective design strategy of polymer thermoelectric materials based on structural control in doped polymer semiconductors is presented. The strategy is illustrated for two archetypical polythiophenes, e.g., poly(2,5‐bis(3‐dodecyl‐2‐thienyl)thieno[3,2‐b]thiophene) (C₁₂‐PBTTT) and regioregular poly(3‐hexylthiophene) (P3HT). FeCl₃ doping of aligned films results in charge conductivities up to 2 × 10⁵ S cm^?1 and metallic‐like thermopowers similar to iodine‐doped polyacetylene. The films are almost optically transparent and show strongly polarized near‐infrared polaronic bands (dichroic ratio >10). The comparative study of structure–property correlations in P3HT and C₁₂‐PBTTT identifies three conditions to obtain conductivities beyond 10⁵ S cm^?1: i) achieve high in‐plane orientation of conjugated polymers with high persistence length; ii) ensure uniform chain oxidation of the polymer backbones by regular intercalation of dopant molecules in the polymer structure without disrupting alignment of π‐stacked layers; and iii) maintain a percolating nanomorphology along the chain direction. The highly anisotropic conducting polymer films are ideal model systems to investigate the correlations between thermopower S and charge conductivity σ. A scaling law S ∝ σ^?1/4 prevails along the chain direction, but a different S ∝ ?ln(σ) relation is observed perpendicular to the chains, suggesting different charge transport mechanisms. The simultaneous increase of charge conductivity and thermopower along the chain direction results in a substantial improvement of thermoelectric power factors up to 2 mW m^?1 K^?2 in C₁₂‐PBTTT.     

High Thermoelectric Performance in Polycrystalline SnSe Via Dual‐Doping with Ag/Na and Nanostructuring With Ag8SnSe6

Single crystalline SnSe is one of the most intriguing new thermoelectric materials but the thermoelectric performance of polycrystalline SnSe seems to lag significantly compared to that of a single crystal. Here an effective strategy for enhancing the thermoelectric performance of p‐type polycrystalline SnSe by Ag/Na dual‐doping and Ag₈SnSe₆ (STSe) nanoprecipitates is reported. The Ag/Na dual‐doping leads to a two orders of magnitude increase in carrier concentration and a convergence of valence bands (VBM₁ and VBM₅), which in turn results in sharp enhancement of electrical conductivities and high Seebeck coefficients in the Ag/Na dual‐doped samples. Additionally, the SnSe matrix becomes nanostructured with dispersed nanoprecipitates of the compound Ag₈SnSe₆, which further strengthens the scattering of phonons. Specifically, ≈20% reduction in the already ultralow lattice thermal conductivity is realized for the Sn_0.99Na_0.01Se–STSe sample at 773 K compared to the thermal conductivity of pure SnSe. Consequently, a peak thermoelectric figure of merit ZT of 1.33 at 773 K with a high average ZT (ZT_ave) value of 0.91 (423–823 K) is achieved for the Sn_0.99Na_0.01Se–STSe sample.     

Stabilized Co3+/Co4+ Redox Pair in In Situ Produced CoSe2−x‐Derived Cobalt Oxides for Alkaline Zn Batteries with 10 000‐Cycle Lifespan and 1.9‐V Voltage Plateau

In aqueous alkaline Zn batteries (AZBs), the Co³⁺/Co⁴⁺ redox pair offers a higher voltage plateau than its Co²⁺/Co³⁺ counterpart. However, related studies are scarce, due to two challenges: the Co³⁺/Co⁴⁺ redox pair is more difficult to activate than Co²⁺/Co³⁺; once activated, the Co³⁺/Co⁴⁺ redox pair is unstable, owing to the rapid reduction of surplus Co³⁺ to Co²⁺. Herein, CoSe_2?x is employed as a cathode material in AZBs. Electrochemical analysis recognizes the principal contributions of the Co³⁺/Co⁴⁺ redox pair to the capacity and voltage plateau. Mechanistic studies reveal that CoSe_2?x initially undergoes a phase transformation to derived Co_xO_ySe_z, which has not been observed in other Zn//cobalt oxide batteries. The Se doping effect is conducive to sustaining abundant and stable Co³⁺ species in Co_xO_ySe_z. As a result, the battery achieves a 10 000‐cycle ultralong lifespan with 0.02% cycle^?1 capacity decay, a 1.9‐V voltage plateau, and an immense areal specific capacity compared to its low‐valence oxide counterparts. When used in a quasi‐solid‐state electrolyte, as‐assembled AZB delivers 4200 cycles and excellent tailorability, a promising result for wearable applications. The presented effective strategy for obtaining long‐cyclability cathodes via a phase transformation‐induced heteroatom doping effect may promote high‐valence metal species mediation toward highly stable electrodes.     

Exceptionally High Performance Anode Material Based on Lattice Structure Decorated Double Perovskite Sr2FeMo2/3Mg1/3O6−δ for Solid Oxide Fuel Cells

A novel double perovskite Sr₂FeMo_2/3Mg_1/3O_6?δ is prepared and characterized as an anode material for solid oxide fuel cells (SOFCs). X‐ray diffraction refinement reveals that Mg and Mo cations locate separately in two different B sites (B and B′ in A₂BB′O₆) while Fe occupies both B and B′ sites, forming the lattice structure with the form of Sr₂(Mg_1/3Fe_2/3)(Mo_2/3Fe_1/3)O_6?δ. The inactive element Mg doping not only endows the material with excellent redox structural stability but also triggers the creation of antisite defects in the crystal lattice, which provide the material with excellent electrochemical activity. The anode performance of Sr₂FeMo_2/3Mg_1/3O_6?δ is characterized in an La_0.8Sr_0.2Ga_0.8Mg_0.2O_3?δ electrolyte supported cell with La_0.58Sr_0.4Fe_0.8Co_0.2O_3?δ cathode. A peak power density of 531, 803, 1038, and 1316 mW cm^?2 at 750, 800, 850, and 900 °C, respectively, is achieved in humidified H₂. The Sr₂FeMo_2/3Mg_1/3O_6?δ shows suitable thermal expansion coefficient (16.9(2) × 10^?6 K^?1), high electrical conductivity, and good tolerance to carbon deposition and sulfur poisoning. First‐principle computations demonstrate that the presence of Fe_B? O? Fe_B′ bonds can promote the easy formation and fast migration of oxygen vacancies in the lattice, which are the key to affecting the anode reaction kinetics. The excellent overall performance of Sr₂FeMo_2/3Mg_1/3O_6?δ compound makes it a promising anode material for SOFCs.