Understanding the Doping Effect on NiO: Toward High‐Performance Inverted Perovskite Solar Cells

High‐quality hole transport layers are prepared by spin‐coating copper doped nickel oxide (Cu:NiO) nanoparticle inks at room temperature without further processing. In agreement with theoretical calculations predicting that Cu doping results in acceptor energy levels closer to the valence band maximum compared to gap states of nickel vacancies in undoped NiO, an increase in the conductivity in Cu:NiO films compared to NiO is observed. Cu in Cu:NiO can be found in both Cu⁺ and Cu²⁺ states, and the substitution of Ni²⁺ with Cu⁺ contributes to both increased carrier concentration and carrier mobility. In addition, the films exhibit increased work function, which together with the conductivity increase, enables improved charge transfer and extraction. Furthermore, recombination losses due to lower monomolecular Shockley‐Read‐Hall recombination are reduced. These factors result in an improvement of all photovoltaic performance parameters and consequently an increased efficiency of the inverted planar perovskite solar cells. A power conversion efficiency (PCE) exceeding 20% could be achieved for small‐area devices, while PCE values of 17.41 and 18.07% are obtained for flexible devices and large area (1 cm²) devices on rigid substrates, respectively.     

Spatial Distribution Recast for Organic Bulk Heterojunctions for High‐Performance All‐Inorganic Perovskite/Organic Integrated Solar Cells

All‐inorganic CsPbIBr₂ perovskite solar cells (pero‐SCs) exhibit excellent overall stability, but their power conversion efficiencies (PCEs) are greatly limited by their wide bandgaps. Integrated solar cells (ISCs) are considered to be an emergent technology that could extend their photoresponse by directly stacking two distinct photoactive layers with complementary bandgaps. However, rising photocurrents always sacrifice other photovoltaic parameters, thereby leading to an unsatisfactory PCE. Here, a recast strategy is proposed to optimize the spatial distribution components of low‐bandgap organic bulk‐heterojunction (BHJ) film, and is combined with an all‐inorganic perovskite to construct perovskite/BHJ ISCs. With this strategy, the integrated perovskite/BHJ film with a top‐enriched donor‐material spatial distribution is shown to effectively improve ambipolar charge transport behavior and suppress charge carrier recombination. For the first time, the ISC is not only significantly extended and enhanced the photoresponse achieving a 20% increase in current density, but also exhibits a high open‐circuit voltage and fill factor at the same time. As a result, a record PCE of 11.08% based on CsPbIBr₂ pero‐SCs is realized; it simultaneously shows excellent long‐term stability against heat and ultraviolet light.     

Anomalous Charge‐Extraction Behavior for Graphene‐Oxide (GO) and Reduced Graphene‐Oxide (rGO) Films as Efficient p‐Contact Layers for High‐Performance Perovskite Solar Cells

Reduced graphene oxides (rGO) are synthesized via reduction of GO with reducing agents as a hole‐extraction layer for high‐performance inverted planar heterojunction perovskite solar cells. The best efficiencies of power conversion (PCE) of these rGO cells exceed 16%, much greater than those made of GO and poly(3,4‐ethenedioxythiophene):poly(styrenesulfonate) films. A flexible rGO device shows PCE 13.8% and maintains 70% of its initial performance over 150 bending cycles. It is found that the hole‐extraction period is much smaller for the GO/methylammonium lead‐iodide perovskite (PSK) film than for the other rGO/PSK films, which contradicts their device performances. Photoluminescence and transient photoelectric decays are measured and control experiments are performed to prove that the reduction of the oxygen‐containing groups in GO significantly decreases the ability of hole extraction from PSK to rGO and also retards the charge recombination at the rGO/PSK interface. When the hole injection from PSK to GO occurs rapidly, hole propagation from GO to the indium‐doped tin oxide (ITO) substrate becomes a bottleneck to overcome, which leads to a rapid charge recombination that decreases the performance of the GO device relative to the rGO device.     

Rapid Layer‐Specific Annealing Enabled by Ultraviolet LED with Estimation of Crystallization Energy for High‐Performance Perovskite Solar Cells

A rapid layer‐specific annealing on perovskite active layer enabled by ultraviolet (UV) light‐emitting diode (LED) is demonstrated and efficiency close to 19% is achieved in a simple planar inverted structure ITO/PEDOT:PSS/MAPbI₃/PC₇₁BM/Al without any device engineering. These results demonstrate that if the UV dosage is well managed, UV light is capable of annealing perovskite into high‐quality film rather than simply damaging it. Different in principle from other photonic treatment techniques that can heat up and damage underlying films, the UV‐LED‐annealing method enables layer‐specific annealing because LED light source is able to provide a specific UV wavelength for maximum light absorption of target film. Moreover, the layer‐specific photonic treatment allows accurate estimation of the crystallization energy required to form perovskite film at device quality level.     

Carbon Nanoparticles in High‐Performance Perovskite Solar Cells

In the past few years, organic–inorganic metal halide ABX₃ perovskites (A = Rb, Cs, methylammonium, formamidinium (FA); B = Pb, Sn; X = Cl, Br, I) have rapidly emerged as promising materials for photovoltaic applications. Tuning the film morphology by various deposition techniques and additives is crucial to achieve solar cells with high performance and long‐term stability. In this work, carbon nanoparticles (CNPs) containing functional groups are added to the perovskite precursor solution for fabrication of fluorine‐doped tin oxide/TiO₂/perovskite/spiro‐OMeTAD/gold devices. With the addition of CNPs, the perovskite films are thermally more stable, contain larger grains, and become more hydrophobic. NMR experiments provide strong evidence that the functional groups of the CNPs interact with FA cations already in the precursor solution. The fabricated solar cells show a power‐conversion efficiency of 18% and negligible hysteresis.     

High‐Efficiency CsPbI2Br Perovskite Solar Cells with Dopant‐Free Poly(3‐hexylthiophene) Hole Transporting Layers

CsPbI₂Br is emerging as a promising all‐inorganic material for perovskite solar cells (PSCs) due to its more stable lattice structure and moisture resistance compared to CsPbI₃, although its device performance is still much behind this counterpart. Herein, a preannealing process is developed and systematically investigated to achieve high‐quality CsPbI₂Br films by regulating the nucleation and crystallization of perovskite. The preannealing temperature and time are specifically optimized for a dopant‐free poly(3‐hexylthiophene) (P3HT)‐based device to target dopant‐induced drastic performance degradation for spiro‐OMeTAD‐based devices. The resulting P3HT‐based device exhibits comparable power conversion efficiency (PCE) to spiro‐OMeTAD‐based devices but much enhanced ambient stability with over 95% PCE after 1300 h. A diphenylamine derivative is introduced as a buffer layer to improve the energy‐level mismatch between CsPbI₂Br and P3HT. A record‐high PCE of 15.50% for dopant‐free P3HT‐based CsPbI₂Br PSCs is achieved by alleviating the open‐circuit voltage loss with the buffer layer. These results demonstrate that the preannealing processing together with a suitable buffer layer are applicable strategies for developing dopant‐free P3HT PSCs with high efficiency and stability.     

Processing‐Performance Evolution of Perovskite Solar Cells: From Large Grain Polycrystalline Films to Single Crystals

Solution‐processable halide perovskites have emerged as strong contenders for next‐generation solar cells owing to their favorable optoelectronic properties. To maintain the efficiency momentum of perovskite solar cells (PSCs), development of advanced processing techniques, particularly for the perovskite layer, is imperative. There is a close correlation between the quality of the perovskite layer and its photophysical properties: Highly crystalline large grains with uniform morphology of the perovskite layer and their interface with charge transporters are crucial for achieving high performance. Significant efforts have been dedicated to achieve perovskite films with large grains reaching the millimeter‐scale for high‐efficiency PSCs. Recent work showcases a transition from large grain polycrystalline to single‐crystalline (SC) PSCs made possible by the facile growth of perovskite single crystals. In this review, the recent progress of the large grain polycrystalline PSCs and grain boundary‐free SC‐PSCs is reported, particularly focusing on the recent approach of depositing large‐grained perovskite layers and single crystal growth technique, that have been adopted for fabrication of efficient PSCs. In addition, prospects of SC‐PSCs and their further development in terms of efficiency, device design, scalability, and stability are discussed.     

High‐Performance Multilayer Encapsulation for Perovskite Photovoltaics

An encapsulation system comprising of a UV‐curable epoxy, a solution processed polymer interlayer, and a glass cover‐slip, is used to increase the stability of methylammonium lead triiodide (CH₃NH₃PbI₃) perovskite planar inverted architecture photovoltaic (PV) devices. It is found this encapsulation system acts as an efficient barrier to extrinsic degradation processes (ingress of moisture and oxygen), and that the polymer acts as a barrier that protects the PV device from the epoxy before it is fully cured. This results in devices that maintain 80% of their initial power conversion efficiency after 1000 h of AM1.5 irradiation. Such devices are used as a benchmark and are compared with devices having initially enhanced efficiency as a result of a solvent annealing process. It is found that such solvent‐annealed devices undergo enhanced burn‐in and have a reduced long‐term efficiency, a result demonstrating that initially enhanced device efficiency does not necessarily result in long‐term stability.     

Benzylamine‐Treated Wide‐Bandgap Perovskite with High Thermal‐Photostability and Photovoltaic Performance

Mixed iodide‐bromide organolead perovskites with a bandgap of 1.70–1.80 eV have great potential to boost the efficiency of current silicon solar cells by forming a perovskite‐silicon tandem structure. Yet, the stability of the perovskites under various application conditions, and in particular combined light and heat stress, is not well studied. Here, FA_0.15Cs_0.85Pb(I_0.73Br_0.27)₃, with an optical bandgap of ≈1.72 eV, is used as a model system to investigate the thermal‐photostability of wide‐bandgap mixed halide perovskites. It is found that the concerted effect of heat and light can induce both phase segregation and decomposition in a pristine perovskite film. On the other hand, through a postdeposition film treatment with benzylamine (BA) molecules, the highly defective regions (e.g., film surface and grain boundaries) of the film can be well passivated, thus preventing the progression of decomposition or phase segregation in the film. Besides the stability improvement, the BA‐modified perovskite solar cells also exhibit excellent photovoltaic performance, with the champion device reaching a power conversion efficiency of 18.1%, a stabilized power output efficiency of 17.1% and an open‐circuit voltage (V _oc) of 1.24 V.     

Copper Salts Doped Spiro‐OMeTAD for High‐Performance Perovskite Solar Cells

The development of effective and stable hole transporting materials (HTMs) is very important for achieving high‐performance planar perovskite solar cells (PSCs). Herein, copper salts (cuprous thiocyanate (CuSCN) or cuprous iodide (CuI)) doped 2,2,7,7‐tetrakis(N,N‐di‐p‐methoxyphenylamine)‐9,9‐spirobifluorene (spiro‐OMeTAD) based on a solution processing as the HTM in PSCs is demonstrated. The incorporation of CuSCN (or CuI) realizes a p‐type doping with efficient charge transfer complex, which results in improved film conductivity and hole mobility in spiro‐OMeTAD:CuSCN (or CuI) composite films. As a result, the PCE is largely improved from 14.82% to 18.02% due to obvious enhancements in the cell parameters of short‐circuit current density and fill factor. Besides the HTM role, the composite film can suppress the film aggregation and crystallization of spiro‐OMeTAD films with reduced pinholes and voids, which slows down the perovskite decomposition by avoiding the moisture infiltration to some extent. The finding in this work provides a simple method to improve the efficiency and stability of planar perovskite solar cells.     

Fusing Nanowires into Thin Films: Fabrication of Graded‐Heterojunction Perovskite Solar Cells with Enhanced Performance

Perovskite solar cells (PSCs) have recently experienced a rapid rise in power conversion efficiency (PCE), but the prevailing PSCs with conventional mesoscopic or planar device architectures still contain nonideal perovskite/hole‐transporting‐layer (HTL) interfaces, limiting further enhancement in PCE and device stability. In this work, CsPbBr₃ perovskite nanowires are employed for modifying the surface electronic states of bulk perovskite thin films, forming compositionally‐graded heterojunction at the perovskite/HTL interface of PSCs. The nanowire morphology is found to be key to achieving lateral homogeneity in the perovskite film surface states resulting in a near‐ideal graded heterojunction. The hidden role of such lateral homogeneity on the performance of graded‐heterojunction PSCs is revealed for the first time. The resulting PSCs show high PCE up to 21.4%, as well as high operational stability, which is superior to control PSCs fabricated without CsPbBr₃‐nanocrystals modification and with CsPbBr₃‐nanocubes modification. This study demonstrates the promise of controlled hybridization of perovskite nanowires and bulk thin films for more efficient and stable PSCs.     

Solution‐Processed Low‐Bandgap CuIn(S,Se)2 Absorbers for High‐Efficiency Single‐Junction and Monolithic Chalcopyrite‐Perovskite Tandem Solar Cells

A novel molecular‐ink deposition route based on thiourea and N,N‐dimethylformamide (DMF) that results in a certified solar cell efficiency world record for non‐vacuum deposited CuIn(S,Se)₂ (CIS) absorbers and non‐vacuum deposited absorbers with a bandgap of 1.0 eV, is presented. It is found that by substituting the widely employed solvent dimethyl sulfoxide with DMF, the coordination chemistry of InCl₃ could be altered, dramatically improving ink stability, enabling up to tenfold increased concentrations, omitting the necessity for elevated ink temperatures, and radically accelerating the deposition process. Furthermore, it is shown that by introducing compositionally graded precursor films, film porosity, compositional gradients, and the surface roughness of the absorbers are effectively reduced and device conversion efficiencies are increased up to 13.8% (13.1% certified, active area). The reduced roughness is also seen as crucial to realize monolithically interconnected CIS‐perovskite tandem devices, where semitransparent MAPbI₃ devices are directly deposited on the CIS bottom cell. Confirming the feasibility of this approach, monolithic devices with near perfect voltage addition between subcells of up to 1.40 V are presented.     

Reducing Saturation‐Current Density to Realize High‐Efficiency Low‐Bandgap Mixed Tin–Lead Halide Perovskite Solar Cells

The unsatisfactory performance of low‐bandgap mixed tin (Sn)–lead (Pb) halide perovskite subcells has been one of the major obstacles hindering the progress of the power conversion efficiencies (PCEs) of all‐perovskite tandem solar cells. By analyzing dark‐current density and distribution, it is identified that charge recombination at grain boundaries is a key factor limiting the performance of low‐bandgap mixed Sn–Pb halide perovskite subcells. It is further found that bromine (Br) incorporation can effectively passivate grain boundaries and lower the dark current density by two–three orders of magnitude. By optimizing the Br concentration, low‐bandgap (1.272 eV) mixed Sn–Pb halide perovskite solar cells are fabricated with open‐circuit voltage deficits as low as 0.384 V and fill factors as high as 75%. The best‐performing device demonstrates a PCE of >19%. The results suggest an important direction for improving the performance of low‐bandgap mixed Sn–Pb halide perovskite solar cells.     

Light‐Induced Degradation of Perovskite Solar Cells: The Influence of 4‐Tert‐Butyl Pyridine and Gold

Stability is one of the key challenges for industrial scale commercialization of perovskite solar cells. In this work, a degradation mechanism that depends on materials and bias conditions of the device during light‐soaking is proposed. The observed degradation is linked to the additive 4‐tert‐butyl pyridine (tBP), crucial to the hole transport layer of most perovskite solar cells, and gold. This conclusion is reached through the statistical analysis of multiple compositional profiles of light‐soaked and nonlight‐soaked devices and by selective replacement of material layers of the device. Moreover, the rate of the light‐induced degradation is enhanced by operation at forward bias, which is required for power generation. Thus, this work stresses the need for the development of transport layers that do not require tBP, and to replace gold to produce high‐performing devices that are also stable under operating conditions.     

Efficient Indium‐Doped TiOx Electron Transport Layers for High‐Performance Perovskite Solar Cells and Perovskite‐Silicon Tandems

In addition to a good perovskite light absorbing layer, the hole and electron transport layers play a crucial role in achieving high‐efficiency perovskite solar cells. Here, a simple, one‐step, solution‐based method is introduced for fabricating high quality indium‐doped titanium oxide electron transport layers. It is shown that indium‐doping improves both the conductivity of the transport layer and the band alignment at the ETL/perovskite interface compared to pure TiO₂, boosting the fill‐factor and voltage of perovskite cells. Using the optimized transport layers, a high steady‐state efficiency of 17.9% for CH₃NH₃PbI₃‐based cells and 19.3% for Cs_0.05(MA_0.17FA_0.83)_0.95Pb(I_0.83Br_0.17)₃‐based cells is demonstrated, corresponding to absolute efficiency gains of 4.4% and 1.2% respectively compared to TiO₂‐based control cells. In addition, a steady‐state efficiency of 16.6% for a semi‐transparent cell is reported and it is used to achieve a four‐terminal perovskite‐silicon tandem cell with a steady‐state efficiency of 24.5%.