Optimization of Dielectric-Coated Silver Nanoparticle Films for Plasmonic-Enhanced Light Trapping in Thin Film Silicon Solar Cells

Surface plasmonic-enhanced light trapping from metal nanoparticles is a promising way of increasing the light absorption in the active silicon layer and, therefore, the photocurrent of the silicon solar cells. In this paper, we applied silver nanoparticles on the rear side of polycrystalline silicon thin film solar cell and systematically studied the dielectric environment effect on the absorption and short-circuit current density (Jsc) of the device. Three different dielectric layers, magnesium fluoride (MgF₂, n?=?1.4), tantalum pentoxide (Ta₂O₅, n?=?2.2), and titanium dioxide (TiO₂, n?=?2.6), were investigated. Experimentally, we found that higher refractive index dielectric coatings results in a redshift of the main plasmonic extinction peak and higher modes were excited within the spectral region that is of interest in our thin film solar cell application. The optical characterization shows that nanoparticles coated with highest refractive index dielectric TiO₂ provides highest absorption enhancement 75.6 %; however, from the external quantum efficiency characterization, highest short-circuit current density Jsc enhancement of 45.8 % was achieved by coating the nanoparticles with lower refractive index MgF₂. We also further optimize the thickness of MgF₂ and a final 50.2 % Jsc enhancement was achieved with a 210-nm MgF₂ coating and a back reflector.     

Metal-Dielectric-Graphene Hybrid Heterostructures with Enhanced Surface Plasmon Resonance Sensitivity Based on Amplitude and Phase Measurements

Metal-dielectric-graphene hybrid heterostructures based on oxides Al₂O₃, HfO₂, and ZrO₂ as well as on complementary metal–oxide–semiconductor compatible dielectric Si₃N₄ covering plasmonic metals Cu and Ag have been fabricated and studied. We show that the characteristics of these heterostructures are important for surface plasmon resonance biosensing (such as minimum reflectivity, sharp phase changes, resonance full width at half minimum and resonance sensitivity to refractive index unit (RIU) changes) can be significantly improved by adding dielectric/graphene layers. We demonstrate maximum plasmon resonance spectral sensitivity of more than 30,000 nm/RIU for Cu/Al₂O₃ (ZrO₂, Si₃N₄), Ag/Si₃N₄ bilayers and Cu/dielectric/graphene three-layers for near-infrared wavelengths. The sensitivities of the fabricated heterostructures were?~?5–8 times higher than those of bare Cu or Ag thin films. We also found that the width of the plasmon resonance reflectivity curves can be reduced by adding dielectric/graphene layers. An unexpected blueshift of the plasmon resonance spectral position was observed after covering noble metals with high-index dielectric/graphene heterostructures. We suggest that the observed blueshift and a large enhancement of surface plasmon resonance sensitivity in metal-dielectric-graphene hybrid heterostructures are produced by stationary surface dipoles which generate a strong electric field concentrated at the very thin top dielectric/graphene layer.

     

Influence of SiO<Subscript>2</Subscript> Spacer Layer Thickness on Performance of Plasmonic Textured Silicon Solar Cell

We investigated the effect of SiO₂ spacer layer thickness between the textured silicon surface and silver nanoparticles (Ag NPs) on solar cell performance using quantum efficiency analysis. Separation of Ag NPs from high index silicon with SiO₂ layer led to modified absorption and scattering cross-sections due to graded refractive index medium. The forward scattering from Ag NPs is very sensitive to SiO₂ layer thickness in plasmonic silicon cell performance due to the evanescent character of generated near-fields around the NPs. With the optimized ～30–40 nm SiO₂ spacer layer, we observed an enhancement of solar cell efficiency from ～8.7 to ～10 %, which is due to the photocurrent enhancement in the off-resonance surface plasmon region. We also estimated minority carrier diffusion lengths (L _eff) from internal quantum efficiency data, which are also sensitive to SiO₂ spacer layer thickness. We observed that the L _eff values are enhanced from ～356 to ～420 μm after placing Ag NPs on ～40 nm spacer layer due to improved forward (angular) scattering of light from the Ag NPs into silicon.     

Optical Absorption Modeling of Plasmonic Organic Solar Cells Embedding Silica-Coated Silver Nanospheres

We numerically study plasmonic solar cells in which a square periodic array of core–shell Ag@SiO₂ nanospheres (NSs) are placed on top of the indium tin oxide (ITO) layer using a 3D finite-difference time-domain (FDTD) method. We investigate the influence of various parameters such as the periodicity of the array, the Ag core diameter, the active layer thickness, the shell thickness, and the refractive index of the shell materials on the optical performance of the organic solar cells (OSC). Our results show that the optimal periodicity of the array of NSs is dependent on the size of Ag core NSs in order to maximize optical absorption in the active layer. A very thin active layer (<70 nm) and an ultrathin (<5 nm) SiO₂ shell are needed in order to obtain the highest optical absorption enhancement. Strong electric field localization is observed around the plasmonic core–shell nanoparticles as a result of localized surface plasmon resonance (LSPR) excited by Ag NSs with and without silica shell. Embedding 50 nm Ag NSs with 1-nm-thick SiO₂ shell thickness on top of ITO leads to an enhanced intrinsic optical absorption in a 40-nm-thick poly(3-hexylthiophene):phenyl-C₆₁-butyric acid methyl ester (P3HT:PCBM) active layer by 24.7% relative to that without the NSs. The use of 1-nm-thick ZnO shell instead of SiO₂ leads to an enhanced intrinsic absorption in a 40-nm-thick P3HT:PCBM active layer by 27%.

     

Highest Efficiency Plasmonic Polycrystalline Silicon Thin-Film Solar Cells by Optimization of Plasmonic Nanoparticle Fabrication

Excitation of surface plasmons in metallic nanoparticles is a promising method for increasing the light absorption in solar cells and hence the cell photocurrent. Comprehensive optimization of a nanoparticle fabrication process for enhanced performance of polycrystalline silicon thin-film solar cells is presented. Three factors were studied: the Ag precursor film thickness, annealing temperature and time. The thickness of the precursor film was 10, 14 and 20 nm; annealing temperature was 190, 200, 230 and 260 °C; and annealing time was varied between 20 and 95 min. Performance enhancement due to light-scattering by nanoparticles was calculated by comparing absorption, short-circuit current density and energy conversion efficiency in solar cells with and without nanoparticles formed under different process conditions. Nanoparticles formed from 14-nm-thick Ag precursor film annealed at 230 °C for 53 min result in the highest absorption enhancement in the 700–1,100 nm wavelength range, in the highest enhancement of total short-circuit current density. The highest photocurrent enhancement was 33.5 %, which was achieved by the cell with the highest absorption enhancement in the 700–1,100 nm range. The plasmonic cell efficiency of 5.32 % was achieved without a back reflector and 5.95 % with the back reflector; which is the highest reported efficiency for plasmonic thin-film solar cells.     

Quantifying the Usefulness of Oxide-Encapsulated Silver Nanoparticles in Semiconducting Films

Incorporating plasmonic nanoparticles (NPs) in an organic solar cell (OSC) can improve device performance. In our simulation studies, at NP resonance, absorption in poly(3-hexythiophene)/phenyl-C61-butyric acid methyl ester (P3HT/PCBM) can be increased by encapsulating 50 nm Ag NPs with Al₂O₃, HfO₂, MoO₃, and SiO₂. At Ag NP resonance, when the oxide thickness is significant enough, oxides with high relative permittivity induces a higher electric field enhancement at the metal/dielectric interface. This is translated to improved absorption in the polymer layer. By integrating against AM1.5G, overall absorption in P3HT/PCBM is improved when incorporating Ag NPs encapsulated with a thin oxide shell into the polymer film. However, polymeric absorption loss is induced for oxide-encapsulated Ag NPs if MoO₃ and SiO₂ shells are more than 5 nm. For Al₂O₃ and HfO₂, Ag NPs should not be encapsulated with shells thicker than 10 nm. Modeling studies are also extended to absorption in a CH₃NH₃PbI₃ perovskite layer. It is revealed that both Al₂O₃ and HfO₂ have an optimal shell thickness of about 20 nm to ensure maximum absorption in CH₃NH₃PbI₃. The results can be utilized as a useful guideline when designing photovoltaics from an optical point of view.     

Significant Efficiency Enhancement in Ultrathin CZTS Solar Cells by Combining Al Plasmonic Nanostructures Array and Antireflective Coatings

In the few past years, the economic and eco-friendly Cu₂ZnSnS₄ (CZTS) solar cells have caught lots of attentions. However, due to rather poor efficiency, identifying deficiencies and making improvements is necessary. In the present study, the performance improvement of ultrathin CZTS solar cells was achieved through (1) incorporation of anti-reflective coating (ARC) on the surface of cell and (2) embedding Al plasmonic nanostructures with different radius, periods, and vertical positions in the absorber layer. Various thicknesses of CZTS absorber layer were simulated optically and electrically using FDTD and DEVICE solver of Lumerical software. The reference solar cell consists of a 1.5-nm-thick CZTS absorber and exhibit an efficiency of up to 5.67%, short-circuit current density (Jsc) of 18.48 mA cm⁻² and open circuit voltage of 0.58 V. Result showed a remarkable performance enhancement of the solar cell in spite of a very thin absorber layer. For a 500-μm-thick CZTS solar cell with the assistance of ARC and embedding Al plasmonic nanostructures, the efficiency is increased to 7.45% due to an increase in Jsc to 22.62 mA cm⁻² with an open circuit voltage of 0.62 V.

     

Optical Absorption of Thin Film Solar Cells with Hybrid Arranged Bottom Grating

Crystalline silicon thin film solar cells with hybrid arranged bottom grating are proposed. Optical absorption efficiency and photocurrent density are calculated to get optimized bottom grating parameters. Compared with mono arranged Ag grating or Al-doped zinc-oxide grating, hybrid arranged bottom grating could couple more near-infrared region lights into the active absorber layer. Optical absorption enhancement profiles are plotted for monolayer grating solar cells with four different bottom grating arrangements, which agree with dispersion characteristics well. The absorption enhancement profiles illustrate the mechanism of the more coupling of near-infrared lights. Electrical modeling is considered in the end and it is found that hybrid arranged bottom grating’s thin film solar cell outperforms the thin film solar cells with mono arranged bottom gratings evidently.     

Improving Efficiency of TiO<Subscript>2</Subscript>:Ag /Si Solar Cell Prepared by Pulsed Laser Deposition

Titanium dioxide (TiO₂) has been extensively studied and demonstrated to be suitable to enhance the efficiency of solar cell. In this work, TiO₂ is doped with silver nanoparticles (AgNP’s) on glass and the Si substrate by using Pulsed Laser Deposition (PLD) technique. UV–vis spectroscopy, X-ray diffraction (XRD), X-ray fluorescence (XRF), Fourier Transform Infrared Spectroscopy (FTIR), Scanning Electron Microscopy (SEM), Atomic Force Microscope (AFM), electrical conductivity (σ _dc), Hall coefficient (R_H), current–voltage (I–V), and capacity–voltage (C–V) characterizations have been used to examine the optical, the morphological, and the electrical properties of the films. It has been found that 5 wt.% (Ag) doped TiO₂ thin film has the most effect on efficiency of TiO₂:Ag /Si solar cell. The (I–V) characteristics showed that the (TiO₂) thin film enhances the efficiency of the (p–n) junction solar cell from 1.26 % pure TiO₂ to 7.19 % with doping of noble metal (Ag) representing improvement in the efficiency of solar cell leading to estimate empirical equations between efficiency, extinction coefficient, and energy band gap which have a total fit with the experimental data.     

Broadband Plasmonic Photocurrent Enhancement in Planar Organic Photovoltaics Embedded in a Metallic Nanocavity

A substantial broadband increase in the external quantum efficiency (EQE) of thin‐film organic photovoltaic (OPV) devices using near‐field coupling to surface plasmons is reported, significantly enhancing absorption at surface plasmon resonance (SPR). The devices tested consist of an archetypal boron subpthalocyanine chloride/fullerene (SubPc/C₆₀) donor/acceptor heterojunction embedded within a planar semitransparent metallic nanocavity. The absorption and EQE are modeled in detail and probed by attenuated total internal reflection spectroscopy with excellent agreement. At SPR, the EQE can be enhanced fourfold relative to normal incidence, due to simulated ninefold enhancement in active layer absorption efficiency. The response at SPR is thickness‐independent, down to a few monolayers, suggesting the ability to excite monolayer‐scale junctions with an EQE of ≈6% and a 16‐fold absorption enhancement over normal incidence. These results potentially impact the future design of plasmonically enhanced thin‐film photovoltaics and photodetectors and enable the direct analysis of the dynamics of photocurrent production at OPV heterojunctions.     

Optical Confinements in Correlated Spectral Characteristics of Vertically Aligned Silicon Nanometric Wires Followed by a Facile Fabrication Thereof

Nanometric wires, in particular, vertically aligned silicon nanowires, possess a huge prospect in current thin film solar cell technologies. A bottom-up process to acquire vertically aligned silicon nanowire (Si-NW) on c-Si wafer was demonstrated and characterized. A well coverage of Si-NWs on c-Si, ca. 6.5 × 10⁸/cm², was obtained. SEM micrograph confirmed a variation in Si-NW size in length as well as in diameter. On the other hand, inherent optical characteristics of nanometric wires define the performance of such nanowire-based thin film solar cell. Therefore, key factors, such as absorption profile, energy flow, electromagnetic (EM) field, and generation rate distribution in typical model, “Si-NW on c-Si slab,” have been observed at different wavelengths of solar spectrum. A single Si-NW of cylindrical shape was modelled on c-Si and optimized to elucidate the aforementioned characteristics. Light absorption at 700 nm was found to be the best in this scenario, and therefore, EM field and Poynting vector distribution were simulated at the same wavelength. It was revealed that at 700 nm, strongest sites of EM field and energy flow became more available and confined. Exciton generation rate was found to be distributed and confined all the way down to the bottom of the wire. A correlated phenomenon such as optical confinements in spectral characteristics in nanoscale is elucidated. Such a focused prediction in spectral optical characteristics and facile fabrication route is indispensable in optoelectronics as well as nanowire-based advanced electronic design.     

Light-Harvesting Properties of Embedded Tin Oxide Nanoparticles for Partial Rear Contact Silicon Solar Cells

In this paper, a novel method of preparation and systematic study of application of low-loss tin oxide (SnO₂) nanospheres located at the rear side of crystalline silicon solar cells having partial rear contact have been presented. The improvement in efficiency due to light harvesting through optical scattering of tin oxide nanospheres is significant for thin silicon solar cells. Finite-difference time-domain (FDTD) simulations reveal that embedding of the rear-located nanospheres is necessary for back scattering of light from the rear surface. An analytical electrical model has been developed utilizing the results of optical simulations to estimate the solar cell parameters and efficiency enhancement of solar cells. The model shows that an absolute efficiency enhancement of ～19% can be achieved for 16% efficient 10-μm thin silicon solar cell with partial rear contact. The enhancement is lower (～6%) for thicker (180 μm) partial rear contact cells. Experimentally, SnO₂ nanospheres have been synthesized and applied at the rear side of partial rear contact solar cell as a proof of experiment to validate the potential of this approach. A relative enhancement of short-circuit current by 2.3% and open-circuit voltage by 2.5% has been achieved experimentally for 180-μm silicon solar cells leading to 5.2% higher efficiency with respect to baseline efficiency validating this concept.     

Polycrystalline Silicon Thin-film Solar cells with Plasmonic-enhanced Light-trapping

One of major approaches to cheaper solar cells is reducing the amount of semiconductor material used for their fabrication and making cells thinner. To compensate for lower light absorption such physically thin devices have to incorporate light-trapping which increases their optical thickness. Light scattering by textured surfaces is a common technique but it cannot be universally applied to all solar cell technologies. Some cells, for example those made of evaporated silicon, are planar as produced and they require an alternative light-trapping means suitable for planar devices. Metal nanoparticles formed on planar silicon cell surface and capable of light scattering due to surface plasmon resonance is an effective approach.The paper presents a fabrication procedure of evaporated polycrystalline silicon solar cells with plasmonic light-trapping and demonstrates how the cell quantum efficiency improves due to presence of metal nanoparticles.To fabricate the cells a film consisting of alternative boron and phosphorous doped silicon layers is deposited on glass substrate by electron beam evaporation. An Initially amorphous film is crystallised and electronic defects are mitigated by annealing and hydrogen passivation. Metal grid contacts are applied to the layers of opposite polarity to extract electricity generated by the cell. Typically, such a ~2 μm thick cell has a short-circuit current density (Jsc) of 14-16 mA/cm², which can be increased up to 17-18 mA/cm² (~25% higher) after application of a simple diffuse back reflector made of a white paint.To implement plasmonic light-trapping a silver nanoparticle array is formed on the metallised cell silicon surface. A precursor silver film is deposited on the cell by thermal evaporation and annealed at 23°C to form silver nanoparticles. Nanoparticle size and coverage, which affect plasmonic light-scattering, can be tuned for enhanced cell performance by varying the precursor film thickness and its annealing conditions. An optimised nanoparticle array alone results in cell Jsc enhancement of about 28%, similar to the effect of the diffuse reflector. The photocurrent can be further increased by coating the nanoparticles by a low refractive index dielectric, like MgF₂, and applying the diffused reflector. The complete plasmonic cell structure comprises the polycrystalline silicon film, a silver nanoparticle array, a layer of MgF₂, and a diffuse reflector. The Jsc for such cell is 21-23 mA/cm², up to 45% higher than Jsc of the original cell without light-trapping or ~25% higher than Jsc for the cell with the diffuse reflector only.

Introduction

Light-trapping in silicon solar cells is commonly achieved via light scattering at textured interfaces. Scattered light travels through a cell at oblique angles for a longer distance and when such angles exceed the critical angle at the cell interfaces the light is permanently trapped in the cell by total internal reflection (Animation 1: Light-trapping). Although this scheme works well for most solar cells, there are developing technologies where ultra-thin Si layers are produced planar (e.g. layer-transfer technologies and epitaxial c-Si layers) ¹ and or when such layers are not compatible with textures substrates (e.g. evaporated silicon) ². For such originally planar Si layer alternative light trapping approaches, such as diffuse white paint reflector ³, silicon plasma texturing ⁴ or high refractive index nanoparticle reflector ⁵ have been suggested.Metal nanoparticles can effectively scatter incident light into a higher refractive index material, like silicon, due to the surface plasmon resonance effect ⁶. They also can be easily formed on the planar silicon cell surface thus offering a light-trapping approach alternative to texturing. For a nanoparticle located at the air-silicon interface the scattered light fraction coupled into silicon exceeds 95% and a large faction of that light is scattered at angles above critical providing nearly ideal light-trapping condition (Animation 2: Plasmons on NP). The resonance can be tuned to the wavelength region, which is most important for a particular cell material and design, by varying the nanoparticle average size, surface coverage and local dielectric environment ^6,7. Theoretical design principles of plasmonic nanoparticle solar cells have been suggested ⁸. In practice, Ag nanoparticle array is an ideal light-trapping partner for poly-Si thin-film solar cells because most of these design principle are naturally met. The simplest way of forming nanoparticles by thermal annealing of a thin precursor Ag film results in a random array with a relatively wide size and shape distribution, which is particularly suitable for light-trapping because such an array has a wide resonance peak, covering the wavelength range of 700-900 nm, important for poly-Si solar cell performance. The nanoparticle array can only be located on the rear poly-Si cell surface thus avoiding destructive interference between incident and scattered light which occurs for front-located nanoparticles ⁹. Moreover, poly-Si thin-film cells do not requires a passivating layer and the flat base-shaped nanoparticles (that naturally result from thermal annealing of a metal film) can be directly placed on silicon further increases plasmonic scattering efficiency due to surface plasmon-polariton resonance ¹⁰.The cell with the plasmonic nanoparticle array as described above can have a photocurrent about 28% higher than the original cell. However, the array still transmits a significant amount of light which escapes through the rear of the cell and does not contribute into the current. This loss can be mitigated by adding a rear reflector to allow catching transmitted light and re-directing it back to the cell. Providing sufficient distance between the reflector and the nanoparticles (a few hundred nanometers) the reflected light will then experience one more plasmonic scattering event while passing through the nanoparticle array on re-entering the cell and the reflector itself can be made diffuse - both effects further facilitating light scattering and hence light-trapping. Importantly, the Ag nanoparticles have to be encapsulated with an inert and low refractive index dielectric, like MgF₂ or SiO₂, from the rear reflector to avoid mechanical and chemical damage ⁷. Low refractive index for this cladding layer is required to maintain a high coupling fraction into silicon and larger scattering angles, which are ensured by the high optical contrast between the media on both sides of the nanoparticle, silicon and dielectric ⁶. The photocurrent of the plasmonic cell with the diffuse rear reflector can be up to 45% higher than the current of the original cell or up to 25% higher than the current of an equivalent cell with the diffuse reflector only.     

Efficiency Enhancement of Ultra-thin CIGS Solar Cells Using Bandgap Grading and Embedding Au Plasmonic Nanoparticles

The objective of this study is to enhance the efficiency of copper indium gallium selenide (CIGS) solar cells. To accomplish that, composition grading of absorber layer was carried out by using SILVACO’s technology aided computer design (TCAD) ATLAS program. Results showed a meaningful improvement of output parameters including open-circuit voltage (V_oc), short-circuit current (I_sc), fill factor (FF), and power conversion efficiency (η). For further performance improvement of the cell, Au plasmonic scattering nanoparticles were loaded on the top of the ZnO window layer. Plasmonic nanoparticles can restrict, absorb, navigate, or scatter the incident light. By using the spherical Au nanoparticles, a very good increase in the light absorption in the cell over the reference planar CIGS solar cell was observed. The highest η = 19.01% was achieved for the designed ultra-thin bandgap-graded CIGS solar cell decorated by Au nanoparticles.

     

Electronic, magnetic and optical properties of Cu, Ag, Au-doped Si clusters

The structural, optical and magnetic properties of Cu, Ag, Au-doped Si₇ Clusters have been systematically investigated using density functional theory calculations. The global optimized structures of Cu, Ag, Au-doped Si clusters are predicted to have a lower HOMO–LUMO gap and higher magnetic moment. M-doping (M?=?Cu, Ag, Au) in Si cluster widens a range of adsorption wavelength, especially Au-doping. The characteristics in electronic density of states (DOSs) show that C_5v-Si₆Cu has a big asymmetrical spin-up and spin-down. The average atomic moment is 0.428 mμ_B per atom for the Si₆Cu cluster with C_5v symmetry, while the average paramagnetic moment is 0.143 mμ_B per atom for other M-doped (M?=?Cu, Ag, Au) Si₇ clusters.     

Rear Surface Passivation for Ink-Based,Submicron CuIn(S,Se)2 Solar Cells

A N, N-dimethylformamide and thiourea-based route is developed to fabricate submicron (0.55 and 0.75 µm) thick CuIn(S,Se)₂ (CISSe) thin films for photovoltaic applications, addressing challenges of material usage, throughput, and manufacturing costs. However, reducing the absorber film thickness below 1 µm in a regular CISSe solar cell decreases the device efficiency due to losses at the highly-recombinative, and mediocre-reflective Mo/CISSe rear interface. For the first time, to mitigate the rear recombination losses, a novel rear contacting structure involving a surface passivation layer and point contact openings is developed for solution processed CISSe films and demonstrated in tangible devices. An atomic layer deposited Al₂O₃ film is employed to passivate the Mo/CISSe rear surface while precipitates formed via chemical bath deposition of CdS are used to generate nanosized point openings. Consequently, Al₂O₃ passivated CISSe solar cells show an increase in the open-circuit voltage (V_OC) and short-circuit current density when compared to reference cells with equivalent absorber thicknesses. Notably, a V_OC increase of 59 mV contributes to active area efficiencies of 14.2% for rear passivated devices with 0.75 µm thick absorber layers, the highest reported value for submicron-based solution processed, low bandgap CISSe solar cells.     

Dopamine-Induced Growth of Au and Ag Nanoparticles on ITO Substrate and Their Application in PCPDTBT-Based Polymer Solar Cell

The direct attachment and growth of gold or silver nanoparticles (NPs) on indium tin oxide (ITO) surfaces was demonstrated using a simple and inexpensive successive ionic layer adsorption and reaction (SILAR) method by chemical reduction of the precursor metal salts with dopamine aqueous solution. Ag NPs on ITO substrate were approximately spherical with an average particle size of about 57 nm, but had a wide particle size distribution. Compared with Ag NPs, under the same 10 SILAR cycles, Au NPs have higher density packing and smaller average particle size of about 36 nm. XRD characterization and surface chemistry analysis confirmed the formation of Ag and Au NPs on ITO substrate with small amounts of dopamine-quinone adsorbed on the surface of them. Although Au NPs showed characteristic plasmon absorption, this did not result in performance enhancement in solar cell with the structure of ITO/ZnO/PCPDTBT:[6,6]-phenyl C₇₁/MoO₃/Ag because of the energy level mismatch between ZnO and dopamine molecules adsorbed on the surface of metal NPs.     

Boosting the Performance of WO3/n‐Si Heterostructures for Photoelectrochemical Water Splitting: from the Role of Si to Interface Engineering

Metal oxide/Si heterostructures make up an exciting design route to high‐performance electrodes for photoelectrochemical (PEC) water splitting. By monochromatic light sources, contributions of the individual layers in WO₃/n‐Si heterostructures are untangled. It shows that band bending near the WO₃/n‐Si interface is instrumental in charge separation and transport, and in generating a photovoltage that drives the PEC process. A thin metal layer inserted at the WO₃/n‐Si interface helps in establishing the relation among the band bending depth, the photovoltage, and the PEC activity. This discovery breaks with the dominant Z‐scheme design idea, which focuses on increasing the conductivity of an interface layer to facilitate charge transport, but ignores the potential profile around the interface. Based on the analysis, a high‐work‐function metal is predicted to provide the best interface layer in WO₃/n‐Si heterojunctions. Indeed, the fabricated WO₃/Pt/n‐Si photoelectrodes exhibit a 2 times higher photocurrent density at 1.23 V versus reversible hydrogen electrode (RHE) and a 10 times enhancement at 1.6 V versus RHE compared to WO₃/n‐Si. Here, it is essential that the native SiO₂ layer at the interface between Si and the metal is kept in order to prevent Fermi level pinning in the Schottky contact between the Si and the metal.     

Silicon Nitride-BP-Based Surface Plasmon Resonance Highly Sensitive Biosensor for Virus SARS-CoV-2 Detection

In this study, we propose a surface plasmon resonance (SPR)-based biosensor using silicon nitride (Si₃N₄), black phosphorous (BP), and thiol-tethered DNA as a ligand for fast detection of the SARS-CoV-2 virus. In the proposed biosensor, we have deposited silver (Ag), Si₃N₄, and BP on the base of the BK-7 prism and investigated the performance parameters on the probe in different combinations of the mentioned materials. Herein, three (Ag, Si₃N₄, and BP) different configurations are introduced and compared for the detection of SARS-CoV-2. Furthermore, with the help of the transfer matrix method (TMM), all the three configurations have been analyzed. Notably, the combination of Ag, Si₃N₄, and BP shows better sensitivity (154°/RIU) when compared with other configurations for the detection of SARS-CoV-2. This work may facilitate a new sensing device to detect SARS-CoV-2, based on the hybrid materials.

     

Broadband Reflection Minimization Using Silver Ultra Thin Film Sandwiched Between Silicon Nitride Layers for c-Si Solar Cell Application

Wafer thickness reduction is the main trend for cost reduction of crystalline silicon (c-Si) solar cells. For better light trapping in lower thickness wafers where traditional texturization method may not be promising, alternative techniques are being explored. Here, reflection minimization using silver ultra thin film sandwiched between silicon nitride (SiN_x) antireflection coating (ARC) layers on c-Si substrate is reported. SiN_x ARC layers were deposited by plasma-enhanced chemical vapor deposition (PECVD) and silver ultra thin film by e-beam evaporation; 41 % reflection reduction for silver ultra thin film sandwiched in SiN_x ARC layers as compared to standard 80 nm thin SiN_x ARC on c-Si substrate is shown. The sandwiched structure gives 8.1 % weighted total reflectance for wavelength range of 300–1,200 nm as compared to standard 80-nm SiN_x-based ARC which gives 13.8 %. Also, comparison of this Ag ultra thin film-based sandwiched geometry is done with randomly distributed nanoparticle (NP)-based ARC geometry. It is shown that optically, the sandwiched Ag ultra thin film-based device geometry is more promising than Ag NP-based device geometry and standard 80-nm SiN_x-based geometry for broad wavelength range of 300–1,200 nm.