All‐Oxide MoOx/SnOx Charge Recombination Interconnects for Inverted Organic Tandem Solar Cells

Multijunction solar cells are designed to improve the overlap with the solar spectrum and to minimize losses due to thermalization. Aside from the optimum choice of photoactive materials for the respective sub‐cells, a proper interconnect is essential. This study demonstrates a novel all‐oxide interconnect based on the interface of the high‐work‐function (WF) metal oxide MoO_x and low‐WF tin oxide (SnO_x). In contrast to typical p‐/n‐type tunnel junctions, both the oxides are n‐type semiconductors with a WF of 5.2 and 4.2 eV, respectively. It is demonstrated that the electronic line‐up at the interface of MoO_x and SnO_x comprises a large intrinsic interface dipole (≈0.8 eV), which is key to afford ideal alignment of the conduction band of MoO_x and SnO_x, without the requirement of an additional metal or organic dipole layer. The presented MoO_x/SnO_x interconnect allows for the ideal (loss‐free) addition of the open circuit voltages of the two sub‐cells.     

Interface Modification of Tin Oxide Electron-Transport Layer for the Efficiency and Stability Enhancement of Organic Solar Cells

A small molecular phenanthroline derivative Phen-NaDPO (3-[6-(diphenylphosphinyl)-2-naphthalenyl]-1,10-Phenanthroline) to modify tin oxide (SnO₂) electron-transport layer (ETL) in organic solar cells is employed. Quantum chemistry calculations and experimental results show that Phen-NaDPO can interact with SnO₂, thereby effectively passivating the surface defects, reducing the work function and improving the electrical conductivity of SnO₂, leading to more efficient electron extraction and transport in the organic solar cells (OSCs). Moreover, upon the Phen-NaDPO modification, the decreased surface energy of SnO₂ ETL accounts for enhanced exciton dissociation and charge transport, due to the more ordered molecular organizations of the active layers. Consequently, the inverted OSCs involving Phen-NaDPO/SnO₂ ETLs exhibit an enhanced power conversion efficiency of 17.06% (PM6:Y6) and 18.31% (PM6:L8-BO), which is the highest efficiency for SnO₂ ETL-based binary solar cells to date. Furthermore, the devices based on Phen-NaDPO/SnO₂ ETL show better device stability (storage stability, photostability and humid stability), with T₈₀ exceeding 200 h encapsulated under light irradiation and 400 h without encapsulation in high-humidity ambient condition. These results demonstrate that the modification of SnO₂ using wide-band highly stable conjugated small molecules is very promising for simultaneously improve the efficiencies and device stability of OSCs.     

Linking Vertical Bulk‐Heterojunction Composition and Transient Photocurrent Dynamics in Organic Solar Cells with Solution‐Processed MoOx Contact Layers

It is demonstrated that a combination of microsecond transient photocurrent measurements and film morphology characterization can be used to identify a charge‐carrier blocking layer within polymer:fullerene bulk‐heterojunction solar cells. Solution‐processed molybdenum oxide (s‐MoO_x) interlayers are used to control the morphology of the bulk‐heterojunction. By selecting either a low‐ or high‐temperature annealing (70 °C or 150 °C) for the s‐MoO_x layer, a well‐performing device is fabricated with an ideally interconnected, high‐efficiency morphology, or a device is fabricated in which the fullerene phase segregates near the hole extracting contact preventing efficient charge extraction. By probing the photocurrent dynamics of these two contrasting model systems as a function of excitation voltage and light intensity, the optoelectronic responses of the solar cells are correlated with the vertical phase composition of the polymer:fullerene active layer, which is known from dynamic secondary‐ion mass spectroscopy (DSIMS). Numerical simulations are used to verify and understand the experimental results. The result is a method to detect poor morphologies in operating organic solar cells.     

Improving the Performance and Stability of Inverted Planar Flexible Perovskite Solar Cells Employing a Novel NDI‐Based Polymer as the Electron Transport Layer

A new naphthalene diimide (NDI)‐based polymer with strong electron withdrawing dicyanothiophene (P(NDI2DT‐TTCN)) is developed as the electron transport layer (ETL) in place of the fullerene‐based ETL in inverted perovskite solar cells (Pero‐SCs). A combination of characterization techniques, including atomic force microscopy, scanning electron microscopy, grazing‐incidence wide‐angle X‐ray scattering, near‐edge X‐ray absorption fine‐structure spectroscopy, space‐charge‐limited current, electrochemical impedance spectroscopy, photoluminescence (PL), and time‐resolved PL decay, is used to demonstrate the interface phenomena between perovskite and P(NDI2DT‐TTCN) or [6,6]‐phenyl‐C61‐butyric acid methyl ester (PCBM). It is found that P(NDI2DT‐TTCN) not only improves the electron extraction ability but also prevents ambient condition interference by forming a hydrophobic ETL surface. In addition, P(NDI2DT‐TTCN) has excellent mechanical stability compared to PCBM in flexible Pero‐SCs. With these improved functionalities, the performance of devices based on P(NDI2DT‐TTCN) significantly outperform those based on PCBM from 14.3 to 17.0%, which is the highest photovoltaic performance with negligible hysteresis in the field of polymeric ETLs.     

Efficient and Highly Air Stable Planar Inverted Perovskite Solar Cells with Reduced Graphene Oxide Doped PCBM Electron Transporting Layer

Reduced graphene oxide (rGO) is added in the [6,6]‐Phenyl‐C61‐butyric acid methyl ester (PCBM) electron transport layer (ETL) of planar inverted perovskite solar cells (PSCs), resulting in a power conversion efficiency (PCE) improvement of ≈12%, with a hysteresis‐free PCE of 14.5%, compared to 12.9% for the pristine PCBM based device. The universality of the method is demonstrated in PSCs based on CH₃NH₃PbI_3?x Cl_x and CH₃NH₃PbI₃ perovskites, deposited through one step and two step spin coating process, respectively. After a comprehensive spectroscopic characterization of both devices, it is clear that the introduction of rGO in PCBM ETL results in an important increase of the ETL conductivity, together with reduced series resistance and surface roughness. As a result, a significant photoluminescence quenching of such perovskite/ETL is observed, confirming the increased measured short circuit current density. Transient absorption measurements reveal that in the rGO‐based device, the relaxation process of the excited electrons is significantly faster compared to the reference, which implies that the charge injection rate is significantly faster for the first. Furthermore, the light soaking effect is significantly reduced. Finally, aging measurements reveal that the rGO stabilizes the ELT/perovskite interface, which results in the stabilization of perovskite crystal structure after prolonged illumination.     

Efficient Indium‐Doped TiOx Electron Transport Layers for High‐Performance Perovskite Solar Cells and Perovskite‐Silicon Tandems

In addition to a good perovskite light absorbing layer, the hole and electron transport layers play a crucial role in achieving high‐efficiency perovskite solar cells. Here, a simple, one‐step, solution‐based method is introduced for fabricating high quality indium‐doped titanium oxide electron transport layers. It is shown that indium‐doping improves both the conductivity of the transport layer and the band alignment at the ETL/perovskite interface compared to pure TiO₂, boosting the fill‐factor and voltage of perovskite cells. Using the optimized transport layers, a high steady‐state efficiency of 17.9% for CH₃NH₃PbI₃‐based cells and 19.3% for Cs_0.05(MA_0.17FA_0.83)_0.95Pb(I_0.83Br_0.17)₃‐based cells is demonstrated, corresponding to absolute efficiency gains of 4.4% and 1.2% respectively compared to TiO₂‐based control cells. In addition, a steady‐state efficiency of 16.6% for a semi‐transparent cell is reported and it is used to achieve a four‐terminal perovskite‐silicon tandem cell with a steady‐state efficiency of 24.5%.     

Overcoming the “Light‐Soaking” Issue in Inverted Organic Solar Cells by the Use of Al:ZnO Electron Extraction Layers

A common phenomenon of organic solar cells (OSCs) incorporating metal‐oxide electron extraction layers is the requirement to expose the devices to UV light in order to improve device characteristics – known as the so‐called “light‐soaking” issue. This behaviour appears to be of general validity for various metal‐oxide layers, various organic donor/acceptor systems, and regardless if single junction devices or multi stacked cells are considered. The requirement of UV exposure of OSCs may impose severe problems if substrates with limited UV transmission, UV blocking filters or UV to VIS down‐conversion concepts are applied. In this paper, we will demonstrate that this issue can be overcome by the use of Al doped ZnO (AZO) as electron extraction interlayer. In contrast to devices based on TiO_x and ZnO, the AZO devices show well‐behaved solar cell characteristics with a high fill factor (FF) and power conversion efficiency (PCE) even without the UV spectral components of the AM1.5 solar spectrum. As opposed to previous claims, our results indicate that the origin of s‐shaped characteristics of the OSCs is the metal‐oxide/organic interface. The electronic structures of the TiO_x/fullerene and AZO/fullerene interfaces are studied by photoelectron spectroscopy, revealing an electron extraction barrier for the TiO_x/fullerene case and facilitated electron extraction for AZO/fullerene. These results are of general relevance for organic solar cells based on various donor acceptor active systems.     

Boosting Organic–Metal Oxide Heterojunction via Conjugated Small Molecules for Efficient and Stable Nonfullerene Polymer Solar Cells

Charge events across organic–metal oxide heterointerfaces routinely occur in organic electronics, yet strongly influence their overall performance and stability. They become even more complicated and challenging for the heterojunction conditions in polymer solar cells (PSCs), especially when nonfullerene acceptors with varied energetics are employed. In this work, an effective interfacial strategy that utilizes novel small molecule self‐assembled monolayers (SAMs) is developed to improve the electronic and electric, as well as chemical properties of organic–zinc oxide (ZnO) interfaces for nonfullerene PSCs. It is revealed that the tailored SAMs with well‐controlled energy levels and molecular dipoles can effectively optimize the energetic barrier and work function (WF) of heterointerface for optimal electron extraction. In addition, the introduction of SAMs atop of ZnO facilitates not only acceptor segregation near the n‐contact interface, but also passivation of the photocatalytic activities for ZnO, to improve overall performance and photo stability of the derived nonfullerene PSCs. Overall, the methodology and structure–property relationship revealed herein would be beneficial for a wide range of hybrid electronics.     

Polymer Solar Cells with Efficiency >10% Enabled via a Facile Solution‐Processed Al‐Doped ZnO Electron Transporting Layer

A facile and low‐temperature (125 °C) solution‐processed Al‐doped ZnO (AZO) buffer layer functioning very effectively as electron accepting/hole blocking layer for a wide range of polymer:fullerene bulk heterojunction systems, yielding power conversion efficiency in excess of 10% (8%) on glass (plastic) substrates is described. The ammonia‐treatment of the aqueous AZO nanoparticle solution produces compact, crystalline, and smooth thin films, which retain the aluminum doping, and eliminates/reduces the native defects by nitrogen incorporation, making them good electron transporters and energetically matched with the fullerene acceptor. It is demonstrated that highly efficient solar cells can be achieved without the need for additional surface chemical modifications of the buffer layer, which is a common requirement for many metal oxide buffer layers to yield efficient solar cells. Also highly efficient solar cells are achieved with thick AZO films (>50 nm), highlighting the suitability of this material for roll‐to‐roll coating. Preliminary results on the applicability of AZO as electron injection layer in F8BT‐based polymer light emitting diode are also presented.     

8.9% Single‐Stack Inverted Polymer Solar Cells with Electron‐Rich Polymer Nanolayer‐Modified Inorganic Electron‐Collecting Buffer Layers

Enhanced power conversion efficiency (PCE) is reported in inverted polymer solar cells when an electron‐rich polymer nanolayer (poly(ethyleneimine) (PEI)) is placed on the surface of an electron‐collecting buffer layer (ZnO). The active layer is made with bulk heterojunction films of poly[[4,8‐bis[(2‐ethylhexyl)oxy]benzo[1,2‐b:4,5‐b′]dithiophene‐2,6‐diyl][3‐fluoro‐2‐[(2‐ethylhexyl)carbonyl]thieno[3,4‐b]thiophenediyl]] (PTB7) and [6,6]‐phenyl‐C₇₁‐butyric acid methyl ester (PC₇₁BM). The thickness of the PEI nanolayer is controlled to be 2 nm to minimize its insulating effect, which is confirmed by X‐ray photoelectron spectroscopy and optical absorption measurements. The Kelvin probe and ultraviolet photoelectron spectroscopy measurements demonstrate that the enhanced PCE by introducing the PEI nanolayer is attributed to the lowered conduction band energy of the ZnO layer via the formation of an interfacial dipole layer at the interfaces between the ZnO layer and the PEI nanolayer. The PEI nanolayer also improves the surface roughness of the ZnO layer so that the device series resistance can be noticeably decreased. As a result, all solar cell parameters including short circuit current density, open circuit voltage, fill factor, and shunt resistance are improved, leading to the PCE increase up to ≈8.9%, which is close to the best PCE reported using conjugated polymer electrolyte films.