Fine‐Grained and Nanostructured AgPbmSbTem+2 Alloys with High Thermoelectric Figure of Merit at Medium Temperature

AgPb_mSbTe_m+2 (abbreviated as LAST) has received tremendous attention as a promising thermoelectric material at medium temperature. It can be synthesized by a simple process combining mechanical alloying (MA) and spark plasma sintering (SPS). This work reveals that the thermoelectric figure of merit (ZT value) of LAST can be increased by 50%, benefiting from enhanced electrical conductivity and thermopower due to refined grains and from nanostructuring realized by repeating the milling and SPS processes. This modified process and further compositional optimization enables ZT values of the LAST alloys up to 1.54 at 723 K. This supports the potential of the LAST alloy as a promising medium‐temperature thermoelectric material and reveals the validity of ZT enhancement by a simple microstructural refining and nanostructuring method.     

High Thermoelectric Figure of Merit in PbTe Alloys Demonstrated in PbTe–CdTe

PbTe alloys have been the most efficient materials for thermoelectric power generation since the 1950s. In addition to the observed lattice thermal conductivity reduction by alloy scattering, recent efforts targeting electronic‐transport enhancement through band structure engineering have demonstrated a design route to achieve extraordinary thermoelectric performance. Guided by these recent results, the current work discusses the influence of alloying CdTe in p‐type PbTe where the solubility is strongly temperature‐dependent. Beneficial changes to the band structure and effective scattering of phonons are concurrently inferred when the PbTe–CdTe precipitate composite is expected to become a solid solution at high temperature, enhancing the peak thermoelectric figure of merit to ~1.7. This work emphasizes the importance of solid solution alloys of PbTe for thermoelectric power‐generation applications and also provides an upper limit of about 1 micrometer to the average distance between interfaces above which phonon scattering by composite interfaces is ineffectual.     

Thermoelectric Property Study of Nanostructured p‐Type Half‐Heuslers (Hf,Zr, Ti)CoSb0.8Sn0.2

Based on the best peak theromoelectric figure‐of‐merit value (ZT) of ca. 0.8 in Hf_0.5Zr_0.5CoSb_0.8Sn_0.2 and ca. 1 in Hf_0.8Ti_0.2CoSb_0.8Sn_0.2, the effect of Ti on thermoelectric properties is studied in (Hf, Zr, Ti)CoSb_0.8Sn_0.2, with the aim of further improving the ZT and reducing the usage of Hf. By either partial replacement of Hf and Zr with Ti in Hf_0.5Zr_0.5CoSb_0.8Sn_0.2 or partial replacement of Hf and Ti with Zr in Hf_0.8Ti_0.2CoSb_0.8Sn_0.2, a peak ZT of ≥1 is achieved at 800°C in Hf_0.44Zr_0.44Ti_0.12CoSb_0.8Sn_0.2. This composition has two advantages over the previous two best compositions: higher ZT than Hf_0.5Zr_0.5CoSb_0.8Sn_0.2 and less Hf than in Hf_0.8Ti_0.2CoSb_0.8Sn_0.2. A higher ZT with less Hf is very much desired since Hf is much more expensive than other constituent elements. The ZT improvement is the result of thermal conductivity reduction due to phonon scattering by both alloy and the nanostructure effect.     

n‐Type SnSe2 Oriented‐Nanoplate‐Based Pellets for High Thermoelectric Performance

It is reported that electron doped n‐type SnSe₂ nanoplates show promising thermoelectric performance at medium temperatures. After simultaneous introduction of Se deficiency and Cl doping, the Fermi level of SnSe₂ shifts toward the conduction band, resulting in two orders of magnitude increase in carrier concentration and a transition to degenerate transport behavior. In addition, all‐scale hierarchical phonon scattering centers, such as point defects, nanograin boundaries, stacking faults, and the layered nanostructures, cooperate to produce very low lattice thermal conductivity. As a result, an enhanced in‐plane thermoelectric figure of merit ZT_max of 0.63 is achieved for a 1.5 at% Cl doped SnSe_1.95 pellet at 673 K, which is much higher than the corresponding in‐plane ZT of pure SnSe₂ (0.08).     

High Thermoelectric zT in n‐Type Silver Selenide films at Room Temperature

In this work, a zT value as high as 1.2 at room temperature for n‐type Ag₂Se films is reported grown by pulsed hybrid reactive magnetron sputtering (PHRMS). PHRMS is a novel technique developed in the lab that allows to grow film of selenides with different compositions in a few minutes with great quality. The improved zT value reported for room temperature results from the combination of the high power factors, similar to the best values reported for bulk Ag₂Se (2440 ± 192 µW m^?1 K^?2), along with a reduced thermoelectric conductivity as low as 0.64 ± 0.1 W m^?1 K^?1. The maximum power factor for these films is of 4655 ± 407 µW m^?1 K^?2 at 103 °C. This material shows promise to work for room temperature applications. Obtaining high zT or, in other words, high power factor and low thermal conductivity values close to room temperature for thin films is of high importance to develop a new generation of wearable devices based on thermoelectric heat recovery.     

Grain Boundary Engineering for Achieving High Thermoelectric Performance in n‐Type Skutterudites

Grain or phase boundaries play a critical role in the carrier and phonon transport in bulk thermoelectric materials. Previous investigations about controlling boundaries primarily focused on the reducing grain size or forming nanoinclusions. Herein, liquid phase compaction method is first used to fabricate the Yb‐filled CoSb₃ with excess Sb content, which shows the typical feature of low‐angle grain boundaries with dense dislocation arrays. Seebeck coefficients show a dramatic increase via energy filtering effect through dislocation arrays with little deterioration on the carrier mobility, which significantly enhances the power factor over a broad temperature range with a high room‐temperature value around 47 μW cm^?2 K^?1. Simultaneously, the lattice thermal conductivity could be further suppressed via scattering phonons via dense dislocation scattering. As a result, the highest average figure of merit ZT of ≈1.08 from 300 to 850 K could be realized, comparable to the best reported result of single or triple‐filled Skutterudites. This work clearly points out that low‐angle grain boundaries fabricated by liquid phase compaction method could concurrently optimize the electrical and thermal transport properties leading to an obvious enhancement of both power factor and ZT .     

High Efficiency Half‐Heusler Thermoelectric Materials for Energy Harvesting

Half‐Heusler (HH) compounds have gained ever‐increasing popularity as promising high temperature thermoelectric materials. High figure of merit zT of ≈1.0 above 1000 K has recently been realized for both n‐type and p‐type HH compounds, demonstrating the realistic prospect of these high temperature compounds for high efficiency power generation. Here, recent progress in advanced fabrication techniques and the intrinsic atomic disorders in HH compounds, which are linked to the understanding of the electrical transport, is discussed. Thermoelectric transport features of n‐type ZrNiSn‐based HH alloys are particularly emphasized, which is beneficial to further improving thermoelectric performance and comprehensively understanding the underlying mechanisms in HH thermoelectric materials. The rational design and realization of new high performance p‐type Fe(V,Nb)Sb‐based HH compounds are also demonstrated. The outlook for future research directions of HH thermoelectric materials is also discussed.     

Studies on Thermoelectric Properties of n‐type Polycrystalline SnSe1‐xSx by Iodine Doping

Iodine‐doped n‐type SnSe polycrystalline by melting and hot pressing is prepared. The prepared material is anisotropic with a peak ZT of ≈0.8 at about 773 K measured along the hot pressing direction. This is the first report on thermoelectric properties of n‐type Sn chalcogenide alloys. With increasing content of iodine, the carrier concentration changed from 2.3 × 10¹⁷ cm^?3 (p‐type) to 5.0 × 10¹⁵ cm^?3 (n‐type) then to 2.0 × 10¹⁷ cm^?3 (n‐type). The decent ZT is mainly attributed to the intrinsically low thermal conductivity due to the high anharmonicity of the chemical bonds like those in p‐type SnSe. By alloying with 10 at% SnS, even lower thermal conductivity and an enhanced Seebeck coefficient were achieved, leading to an increased ZT of ≈1.0 at about 773 K measured also along the hot pressing direction.     

Thermoelectric Property Studies on Cu‐Doped n‐type CuxBi2Te2.7Se0.3 Nanocomposites

Combining high energy ball‐milling and hot‐pressing, significant enhancements of the thermoelectric figure‐of‐merit (ZT) have been reported for p‐type Bi_0.4Sb_1.6Te₃ nanocomposites. However, applying the same technique to n‐type Bi₂Te_2.7Se_0.3 showed no improvement on ZT values, due to the anisotropic nature of the thermoelectric properties of n‐type Bi₂Te_2.7Se_0.3. Even though texturing was effective in improving peak ZT of Bi₂Te_2.7Se_0.3 from 0.85 to 1.04, reproducibility from batch to batch remains unsatisfactory. Here, we show that good reproducibility can be achieved by introducing an optimal concentration of 0.01 copper (Cu) per Bi₂Te_2.7Se_0.3 to make Cu_0.01Bi₂Te_2.7Se_0.3 samples. A peak ZT value of 0.99 was achieved in Cu_0.01Bi₂Te_2.7Se_0.3 samples without texturing. With texturing by re‐pressing, the peak ZT was increased to 1.06. Aging in air for over 5 months did not deteriorate but further improved the peak ZT to 1.10. The mechanism by which copper improves the reproducibility, enhances the carrier mobility, and reduces the lattice thermal conductivity is also discussed.     

Half‐Heusler Thermoelectric Module with High Conversion Efficiency and High Power Density

Half‐Heusler (HH) compounds have shown great potential in waste heat recovery. Among them, p‐type NbFeSb and n‐type ZrNiSn based alloys have exhibited the best thermoelectric (TE) performance. However, TE devices based on NbFeSb‐based HH compounds are rarely studied. In this work, bulk volumes of p‐type (Nb_0.8Ta_0.2)_0.8Ti_0.2FeSb and n‐type Hf_0.5Zr_0.5NiSn_0.98Sb_0.02 compounds are successfully prepared with good phase purity, compositional homogeneity, and matchable TE performance. The peak zTs are higher than 1.0 at 973 K for Hf_0.5Zr_0.5NiSn_0.98Sb_0.02 and at 1200 K for (Nb_0.8Ta_0.2)_0.8Ti_0.2FeSb. Based on an optimal design by a full‐parameters 3D finite element model, a single stage TE module with 8 n‐p HH couples is assembled. A high conversion efficiency of 8.3% and high power density of 2.11 W cm^?2 are obtained when hot and cold side temperatures are 997 and 342 K, respectively. Compared to the previous TE module assembled by the same materials, the conversion efficiency is enhanced by 33%, while the power density is almost the same. Given the excellent mechanical robustness and thermal stability, matchable thermal expansion coefficient and TE properties of NbFeSb and ZrNiSn based HH alloys, this work demonstrates their great promise for power generation with both high conversion efficiency and high power density.     

Heterogeneous Distribution of Sodium for High Thermoelectric Performance of p‐type Multiphase Lead‐Chalcogenides

Despite the effectiveness of sodium as a p‐type dopant for lead chalcogenides, its solubility is shown to be very limited in these hosts. Here, a high thermoelectric efficiency of ≈2 over a wide temperature range is reported in multiphase quaternary (PbTe)_0.65(PbS)_0.25(PbSe)_0.1 compounds that are doped with sodium at concentrations greater than the solubility limits of the matrix. Although these compounds present room temperature thermoelectric efficiencies similar to sodium doped PbTe, a dramatically enhanced Hall carrier mobility at temperatures above 600 K for heavily doped compounds results in significantly enhanced thermoelectric efficiencies at elevated temperatures. This is achieved through the composition modulation doping mechanism resulting from heterogeneous distribution of the sodium dopant between precipitates and the matrix at elevated temperatures. These results can lead to further advances in designing high performance multiphase thermoelectric materials with intrinsically heterogeneous dopant distributions.     

Realizing High Thermoelectric Performance in n‐Type Highly Distorted Sb‐Doped SnSe Microplates via Tuning High Electron Concentration and Inducing Intensive Crystal Defects

In this study, a record high figure of merit (ZT) of ≈1.1 at 773 K is reported in n‐type highly distorted Sb‐doped SnSe microplates via a facile solvothermal method. The pellets sintered from the Sb‐doped SnSe microplates show a high power factor of ≈2.4 µW cm^?1 K^?2 and an ultralow thermal conductivity of ≈0.17 W m^?1 K^?1 at 773 K, leading a record high ZT. Such a high power factor is attributed to a high electron concentration of 3.94 × 10¹⁹ cm^?3 via Sb‐enabled electron doping, and the ultralow thermal conductivity derives from the enhanced phonon scattering at intensive crystal defects, including severe lattice distortions, dislocations, and lattice bent, observed by detailed structural characterizations. This study fills in the gaps of fundamental doping mechanisms of Sb in SnSe system, and provides a new perspective to achieve high thermoelectric performance in n‐type polycrystalline SnSe.     

Understanding the Effects of Molecular Dopant on n‐Type Organic Thermoelectric Properties

Molecular doping is a powerful method to fine‐tune the thermoelectric properties of organic semiconductors, in particular to impart the requisite electrical conductivity. The incorporation of molecular dopants can, however, perturb the microstructure of semicrystalline organic semiconductors, which complicates the development of a detailed understanding of structure–property relationships. To better understand how the doping pathway and the resulting dopant counterion influence the thermoelectric performance and transport properties, a new dimer dopant, (N‐DMBI)₂, is developed. Subsequently, FBDPPV is then n‐doped with dimer dopants (N‐DMBI)₂, (RuCp*mes)₂, and the hydride‐donor dopant N‐DMBI‐H. By comparing the UV–vis–NIR absorption spectra and morphological characteristics of the doped polymers, it is found that not only the doping mechanism, but also the shape of the counterion strongly influence the thermoelectric properties and transport characteristics. (N‐DMBI)₂, which is a direct electron‐donating dopant with a comparatively small, relatively planar counterion, gives the best power factor among the three systems studied here. Additionally, temperature‐dependent conductivity and Seebeck coefficient measurements differ between the three dopants with (N‐DMBI)₂ yielding the best thermoelectric properties. The results of this study of dopant effects on thermoelectric properties provide insight into guidelines for future organic thermoelectrics.     

Lithium Fluoride Based Electron Contacts for High Efficiency n‐Type Crystalline Silicon Solar Cells

Low‐resistance contact to lightly doped n‐type crystalline silicon (c‐Si) has long been recognized as technologically challenging due to the pervasive Fermi‐level pinning effect. This has hindered the development of certain devices such as n‐type c‐Si solar cells made with partial rear contacts (PRC) directly to the lowly doped c‐Si wafer. Here, a simple and robust process is demonstrated for achieving mΩ cm² scale contact resistivities on lightly doped n‐type c‐Si via a lithium fluoride/aluminum contact. The realization of this low‐resistance contact enables the fabrication of a first‐of‐its‐kind high‐efficiency n‐type PRC solar cell. The electron contact of this cell is made to less than 1% of the rear surface area, reducing the impact of contact recombination and optical losses, permitting a power conversion efficiency of greater than 20% in the initial proof‐of‐concept stage. The implementation of the LiF_x/Al contact mitigates the need for the costly high‐temperature phosphorus diffusion, typically implemented in such a cell design to nullify the issue of Fermi level pinning at the electron contact. The timing of this demonstration is significant, given the ongoing transition from p‐type to n‐type c‐Si solar cell architectures, together with the increased adoption of advanced PRC device structures within the c‐Si photovoltaic industry.     

Tuning Multiscale Microstructures to Enhance Thermoelectric Performance of n‐Type Bismuth‐Telluride‐Based Solid Solutions

Microstructure manipulation plays an important role in enhancing physical and mechanical properties of materials. Here a high figure of merit zT of 1.2 at 357 K for n‐type bismuth‐telluride‐based thermoelectric (TE) materials through directly hot deforming the commercial zone melted (ZM) ingots is reported. The high TE performance is attributed to a synergistic combination of reduced lattice thermal conductivity and maintained high power factor. The lattice thermal conductivity is substantially decreased by broad wavelength phonon scattering via tuning multiscale microstructures, which includes microscale grain size reduction and texture loss, nanoscale distorted regions, and atomic scale lattice distotions and point defects. The high power factor of ZM ingots is maintained by the offset between weak donor‐like effect and texture loss during the hot deformation. The resulted high zT highlights the role of multiscale microstructures in improving Bi₂Te₃‐based materials and demonstrates the effective strategy in enhancing TE properties.     

Flexible Thermoelectric Generators Composed of n‐and p‐Type Silicon Nanowires Fabricated by Top‐Down Method

This study demonstrates the fabrication and characterization of a flexible thermoelectric (TE) power generator composed of silicon nanowires (SiNWs) fabricated by top‐down method and discusses its strain‐dependence analysis. The Seebeck coefficients of the p‐ and n‐type SiNWs used to form a pn‐module are 156.4 and ?146.1 µV K^?1, respectively. The maximum power factors of the p‐ and n‐type SiNWs are obtained as 8.79 and 8.87 mW (m K²)^?1, respectively, under a convex bending of 1.11%, respectively; these are the largest values among the power factors hitherto reported for SiNWs. The dimensionless figure of merit (ZT ) values of the SiNWs at room temperature are 6.8 × 10^?2 and 6.7 × 10^?2 for the convex bent p‐ and n‐type SiNWs, respectively, with a strain of 1.11%. The thermoelectric properties of the pn‐module and its component SiNWs are characterized under strain conditions ranging from ?1.11% to 1.11%. The maximum Seebeck coefficient and power factor of the pn‐module are obtained as 448 µV K^?1 and 14.2 mW (m K²)^?1, respectively, under convex bending of 1.11%. Moreover, the mechanical stability of the TE characteristics of the pn‐module is demonstrated through a continuous bending test of 3000 cycles under convex bending of 0.66%.     

New Insight on Tuning Electrical Transport Properties via Chalcogen Doping in n‐type Mg3Sb2‐Based Thermoelectric Materials

n‐type Mg₃Sb_1.5Bi_0.5 has recently been discovered to be a promising thermoelectric material, yet the effective n‐type dopants are mainly limited to the chalcogens. This may be attributed to the limited chemical insight into the effects from different n‐type dopants. By comparing the effects of different chalcogen dopants Q (Q = S, Se, and Te) on thermoelectric properties, it is found that the chalcogen dopants Q become more efficient with decreasing electronegativity difference between Q and Mg, which is mainly due to the increasing carrier concentration and mobility. Using density functional theory calculations, it is shown that the improving carrier concentration originates from the increasing doping limit induced by the stabilizing extrinsic defect. Moreover, the increasing electron mobility with decreasing electronegativity difference between Q and Mg is attributed to the smaller effective mass resulting from the enhancing chemical bond covalency, which is supported by the decreasing theoretical density of states. According to the above trends, a simple guiding principle based on electronegativity is proposed to shed new light on n‐type doping in Zintl antimonides.