Direct protein detection with a nano-interdigitated array gate MOSFET |
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Authors: | Xiaohui Tang Alain M Jonas Bernard Nysten Sophie Demoustier-Champagne Franoise Blondeau Pierre-Paul Prvot Rmi Pampin Edmond Godfroid Benjamin Iiguez Jean-Pierre Colinge Jean-Pierre Raskin Denis Flandre Vincent Bayot |
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Institution: | Xiaohui Tang, Alain M. Jonas, Bernard Nysten, Sophie Demoustier-Champagne, Franoise Blondeau, Pierre-Paul Prévot, Rémi Pampin, Edmond Godfroid, Benjamin Iñiguez, Jean-Pierre Colinge, Jean-Pierre Raskin, Denis Flandre,Vincent Bayot |
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Abstract: | A new protein sensor is demonstrated by replacing the gate of a metal oxide semiconductor field effect transistor (MOSFET) with a nano-interdigitated array (nIDA). The sensor is able to detect the binding reaction of a typical antibody Ixodes ricinus immunosuppressor (anti-Iris) protein at a concentration lower than 1 ng/ml. The sensor exhibits a high selectivity and reproducible specific detection. We provide a simple model that describes the behavior of the sensor and explains the origin of its high sensitivity. The simulated and experimental results indicate that the drain current of nIDA-gate MOSFET sensor is significantly increased with the successive binding of the thiol layer, Iris and anti-Iris protein layers. It is found that the sensor detection limit can be improved by well optimizing the geometrical parameters of nIDA-gate MOSFET. This nanobiosensor, with real-time and label-free capabilities, can easily be used for the detection of other proteins, DNA, virus and cancer markers. Moreover, an on-chip associated electronics nearby the sensor can be integrated since its fabrication is compatible with complementary metal oxide semiconductor (CMOS) technology. |
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Keywords: | Nano-interdigitated array gate MOSFET Gate oxide capacitance Threshold voltage shift Protein binding reaction Ixodes ricinus immunosuppressor |
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