Potential Distribution and Ionic Concentration at the Bean Root Surface of the Growing Tip and Lateral Root Emerging Points

The electrical potential distribution has been measured preciselyaround the root surface of the bean sprout Vigna mungo (L) Hepper.A large negative potential well was found at the growth portionof the root tip. Also, in the matured region of the root, wefound a negative potential well at an unspecified position inspite of the fact that nothing was detected on the smooth surface.A lateral root emerge was found to have initiated after 15–20hours just at the position corresponding to the potential well.With the expectation that these potentials can be elucidatedbased on the transport of ions which are released or absorbedby the root as a result of cell activity, we precisely measuredthe concentrations of major ion species (K⁺, H⁺, and Cl^–)around the root. The theoretical potential distribution curvesobtained by putting all the concentration data into the Henderson'sEquation for a liquid junction (diffusion) potential coincidedwell with the experimental curves. (Received October 24, 1994; Accepted March 24, 1995)