The Effect of Carrier Distribution on Performance of ENZ-Based Electro-Absorption Modulator

Recently, epsilon-near-zero (ENZ) has been emerging as an important field of research which is the study of light-matter interactions in the presence of materials with zero permittivity. Since in many scientific works the uniform model of carrier distribution of Indium tin oxide (ITO) has been utilized, we want to investigate ENZ effect in ITO material and the effect of accurate carrier distribution on the performance of a modulator. For this reason, an electro-absorption (EA) modulators with a new configuration based on silicon slot modulator with indium thin oxide material is proposed. To study the effect of ENZ effect in ITO, the semiconductor model (realistic model) is utilized to model the carrier distribution in the ITO material. In this model, there is not any assumption. As a result, by applying the gate voltage, the insertion loss is increased 1.61 dB/μm in comparison with unbiased conditions. Also, the uniform model is used. Compared with the realistic model, the extinction ratio and figure-of-merit significantly enhance based on the uniform model, but the trends of results like insertion loss are so far from the realistic model. It can be found that the realistic model is reliable and the results are closer to reality.