Theoretical study on the initial reaction mechanisms of <Emphasis Type="Italic">ansa</Emphasis>-metallocene zirconium precursor on hydroxylated Si(1 0 0) surface

The initial reaction mechanisms for depositing ZrO₂ thin films using ansa-metallocene zirconium (Cp₂CMe₂)ZrMe₂ precursor were studied by density functional theory (DFT) calculations. The (Cp₂CMe₂)ZrMe₂ precursor could be absorbed on the hydroxylated Si(1 0 0) surface via physisorption. Possible reaction pathways of (Cp₂CMe₂)ZrMe₂ were proposed. For each reaction, the activation energies and reaction energies were compared, and stationary points along the reaction pathways were shown. In addition, the influence of dispersion effects on the reactions was evaluated by non-local dispersion corrected DFT calculations.