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Exploiting Edge Effect to Control Generation Rate and Breakdown Voltage in Graphene Nanoribbon Field Effect Transistors |
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| Authors: | Ghadiry Mahdiar Ahmad Harith Hivechi Alieh Tavakoli Fatemeh Manaf Asrulnizam Abd |
| Affiliation: | 1.Photonic Research Center, University of Malaya, Kuala Lumpur, 50600, Malaysia ;2.Department of Computer Engineering, Faculty of Engineering, Islamic Azad University, Arak Branch, Arak, Iran ;3.Department of Computer Engineering, Faculty of Engineering, Islamic Azad University, Aligoudarz Branch, Aligoudarz, Iran ;4.School of Electrical and Electronics Engineering, Universiti Sains Malaysia, Penang, Malaysia ; |
| Abstract: | Plasmonics - Based on the influence of edge effect and channel shape, two new graphene nanoribbon field effect transistors are presented being useful in high-voltage and highly sensitive optical... |
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