Changes in DNA base sequences in the mutant of Arabidopsis thaliana induced by low-energy N+ implantation |
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Authors: | CHANG Fengqi LIU Xuanming LI Yinxin JIA Gengxiang MA Jingjing LIU Gongshe ZHU Zhiqing |
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Institution: | (1) Key Laboratory of Photosynthesis and Environmental Molecular Physiology, Institute of Botany, Chinese Academy of Sciences, 100093 Beijing, China |
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Abstract: | To reveal the mutation effect of low-energy ion implantation on Ambidopsis thaliana in vivo, T80II, a stable dwarf mutant, derived from the seeds irradiated by 30 keV N+ with the dose of 80 X 1015 ions/cm2 was used for Random Amplified Polymorphic DNA (RAPD) and base sequence analysis. The results indicated that among total 397
RAPD bands observed, 52 bands in T80II were different from those of wild type showing a variation frequency 13.1%. In comparison
with the sequences of A. thaliana in GenBank, the RAPD fragments in T80II were changed greatly in base sequences with an average rate of one base change per
16.8 bases. The types of base changes included base transition, transversion, deletion and insertion. Among the 275 base changes
detected, single base substitutions (97.09%) occurred more frequently than base deletions and insertions (2.91%). And the
frequency of base transitions (66.55%) was higher than that of base transversions (30.55%). Adenine, thymine, guanine or cytosine
could be replaced by any of other three bases in cloned DNA fragments in T80II. It seems that thymine was more sensitive to
the irradiation than other bases. The flanking sequences of the base changes in RAPD fragments in T80II were analyzed and
the mutational “hotspot” induced by low-energy ion implantation was discussed. |
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Keywords: | low-energy N+ beam mutagenesis Arabidopsis thaliana RAPD base changes sequence analysis |
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