Device Characteristics of an 11.4% CZTSe Solar Cell Fabricated from Sputtered Precursors

Kesterite is an attractive material for absorber layers in thin film photovoltaics. Solar cells based on kesterite have shown a substantial progress over the last decade; nevertheless, further improvements in device efficiency are pending due to the open‐circuit voltage (V_oc) deficit (i.e., difference between the maximum V _oc that can be achieved according to Shockley–Queisser limit and actual V _oc from the device). In this study, the optoelectronic properties of the author's internal record Cu₂ZnSnSe₄ solar cell, which shows a power conversion efficiency of 11.4%, are presented. The device measurements reveal a V_oc deficit of 337 mV, which is one of the lowest V _oc deficits in the literature. Moreover, an unusual behavior for kesterite is observed: (i) photon energy of the photoluminescence emission and (ii) the extrapolated V _oc for 0 K are both matching the band gap region of the absorber. These results indicate a significant improvement in the recombination characteristics and absorber quality in comparison to other kesterite devices in literature.