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Bis(cyclopentadienyl) zirconium(IV) amides as possible precursors for low pressure CVD and plasma-enhanced ALD |
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| Authors: | Stephen E. Potts,Claire J. Carmalt,Christopher S. Blackman,Noé mi Leick,Hywel O. Davies |
| Affiliation: | a Materials Chemistry Centre, Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ, UK b Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands c SAFC Hitech Ltd., Power Road, Bromborough, Wirral CH62 3QF, UK |
| Abstract: | Low pressure chemical vapour deposition (LPCVD) of [ZrCp2(NMe2)2] (1), [ZrCp2(η2-MeNCH2CH2NMe)] (2), [ZrCp′2(NMe2)2] (3) and [ZrCp′2(NEt2)2] (4) (Cp = η5-cyclopentadienyl, Cp′ = η5-monomethylcyclopentadienyl), onto glass substrates at 600 °C, afforded highly reflective and adhesive films of zirconium carbide and amorphous carbon. Powder XRD indicated that the films were largely amorphous, although small, broad peaks accounting for ZrC and ZrO2 were present, suggesting that the remaining carbon was due to amorphous deposits from the cyclopentadienyl ligands. SEM images showed an island-growth mechanism with distinct crevices between the concentric nodules. Plasma-enhanced atomic layer deposition (PEALD) of compounds 1 and 2 showed that the precursors were not sufficiently stable or volatile to give a good rate of film growth. |
| Keywords: | Zirconium amide CVD ALD Zirconium carbide Zirconium nitride |
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