High‐Efficiency CsPbI2Br Perovskite Solar Cells with Dopant‐Free Poly(3‐hexylthiophene) Hole Transporting Layers

CsPbI₂Br is emerging as a promising all‐inorganic material for perovskite solar cells (PSCs) due to its more stable lattice structure and moisture resistance compared to CsPbI₃, although its device performance is still much behind this counterpart. Herein, a preannealing process is developed and systematically investigated to achieve high‐quality CsPbI₂Br films by regulating the nucleation and crystallization of perovskite. The preannealing temperature and time are specifically optimized for a dopant‐free poly(3‐hexylthiophene) (P3HT)‐based device to target dopant‐induced drastic performance degradation for spiro‐OMeTAD‐based devices. The resulting P3HT‐based device exhibits comparable power conversion efficiency (PCE) to spiro‐OMeTAD‐based devices but much enhanced ambient stability with over 95% PCE after 1300 h. A diphenylamine derivative is introduced as a buffer layer to improve the energy‐level mismatch between CsPbI₂Br and P3HT. A record‐high PCE of 15.50% for dopant‐free P3HT‐based CsPbI₂Br PSCs is achieved by alleviating the open‐circuit voltage loss with the buffer layer. These results demonstrate that the preannealing processing together with a suitable buffer layer are applicable strategies for developing dopant‐free P3HT PSCs with high efficiency and stability.     

The Rise of Textured Perovskite Morphology: Revolutionizing the Pathway toward High‐Performance Optoelectronic Devices

Halide perovskite materials have achieved overwhelming success in various optoelectronic applications, especially perovskite solar cells and perovskite‐based light‐emitting diodes (P‐LEDs), owing to their outstanding optical and electric properties. It is widely believed that flat and mirror‐like perovskite films are imperative for achieving high device performance, while the potential of other perovskite morphologies, such as the emerging textured perovskite, is overlooked, which leaves plenty of room for further breakthroughs. Compared to flat and mirror‐like perovskites, textured perovskites with unique structures, e.g., coral‐like, maze‐like, column‐like or quasi‐core@shell assemblies, are more efficient at light harvesting and charge extraction, thus revolutionizing the pathways toward ultrahigh performance in perovskite‐based optoelectronic devices. Employing a textured perovskite morphology, the record of external quantum efficiency for P‐LEDs is demonstrated as 21.6%. In this research news, recent progress in the utilization of textured perovskite is summarized, with the emphasis on the preparation strategies and prominent optoelectronic properties. The impact of the textured morphology on light harvesting, carrier dynamic management, and device performance is highlighted. Finally, the challenges and great potential of employing these innovative morphologies in fabricating more efficient optoelectronic devices, or creating a new energy harvesting and conversion regime are also provided.     

Tin Halide Perovskites: Progress and Challenges

The chemical composition engineering of lead halide perovskites via a partial or complete replacement of toxic Pb with tin has been widely reported as a feasible process due to the suitable ionic radius of Sn and its possibility of existing in the +2 state. Interestingly, a complete replacement narrows the bandgap while a partial replacement gives an anomalous phenomenon involving a further narrowing of bandgap relative to the pure Pb and Sn halide perovskite compounds. Unfortunately, the merits of this anomalous behavior have not been properly harnessed. Although promising progress has been made to advance the properties and performance of Sn‐based perovskite systems, their photovoltaic (PV) parameters are still significantly inferior to those of the Pb‐based analogs. This review summarizes the current progress and challenges in the preparation, morphological and photophysical properties of Sn‐based halide perovskites, and how these affect their PV performance. Although it can be argued that the Pb halide perovskite systems may remain the most sought after technology in the field of thin film perovskite PV, prospective research directions are suggested to advance the properties of Sn halide perovskite materials for improved device performance.     

Lead Halide Perovskite Nanocrystals: Room Temperature Syntheses toward Commercial Viability

In this progress report, recent improvements to the room temperaturesyntheses of lead halide perovskite nanocrystals (APbX₃, X = Cl, Br, I) are assessed, focusing on various aspects which influence the commercial viability of the technology. Perovskite nanocrystals can be prepared easily from low‐cost precursors under ambient conditions, yet they have displayed near‐unity photoluminescence quantum yield with narrow, highly tunable emission peaks. In addition to their impressive ambipolar charge carrier mobilities, these properties make lead halide perovskite nanocrystals very attractive for light‐emitting diode (LED) applications. However, there are still many practical hurdles preventing commercialization. Recent developments in room temperature synthesis and purification protocols are reviewed, closely evaluating the suitability of particular techniques for industry. This is followed by an assessment of the wide range of ligands deployed on perovskite nanocrystal surfaces, analyzing their impact on colloidal stability, as well as LED efficiency. Based on these observations, a perspective on important future research directions that can expedite the industrial adoption of perovskite nanocrystals is provided.     

Replacement of Ca by Ni in a Perovskite Titanate to Yield a Novel Perovskite Exsolution Architecture for Oxygen‐Evolution Reactions

For efficient catalysis and electrocatalysis well‐designed, high‐surface‐area support architectures covered with highly dispersed metal nanoparticles with good catalyst‐support interactions are required. In situ grown Ni nanoparticles on perovskites have been recently reported to enhance catalytic activities in high‐temperature systems such as solid oxide cells (SOCs). However, the micrometer‐scale primary particles prepared by conventional solid‐state reactions have limited surface area and tend to retain much of the active catalytic element within the bulk, limiting efficacy of such exsolution processes in low‐temperature systems. Here, a new, highly efficient, solvothermal route is demonstrated to exsolution from smaller scale primary particles. Furthermore, unlike previous reports of B‐site exsolution, it seems that the metal nanoparticles are exsolved from the A‐site of these perovskites. The catalysts show large active site areas and strong metal‐support interaction (SMSI), leading to ≈26% higher geometric activity (25 times higher mass activity with 1.4 V of E_on‐set) and stability for oxygen‐evolution reaction (OER) with only 0.72 µg base metal contents compared to typical 20 wt% Ni/C and even commercial 20 wt% Ir/C. The findings obtained here demonstrate the potential design and development of heterogeneous catalysts in various low‐temperature electrochemical systems including alkaline fuel cells and metal–air batteries.     

The Application of Electron Backscatter Diffraction on Halide Perovskite Materials

Recently, the application of electron backscatter diffraction (EBSD) in halide perovskites has enabled the correlation of the micro‐structural arrangement of polycrystalline grains with other properties (optical, electrical, mechanical, and chemical) in a “pixel‐by‐pixel” approach. Most studies so far have used an ultra‐sensitive electron beam detector that has sensitivity thousands of times higher than a traditional scintillator screen and charge coupled device camera, enabling much lower beam currents. An alternative approach has been the use of low vacuum measurement conditions to avoid charge buildup that leads to damage. This review focuses on introducing the classical EBSD technique to the halide perovskite community, where it has been highly underutilized due to beaminduced damage in these relatively unstable materials. Recent research is used to dispel some common misconceptions about grain boundaries in halide perovskites and highlight what has been learned by comparing and correlating EBSD with other techniques. Additionally, the remaining limitations, development challenges, and future of the EBSD technique for halide perovskites are discussed. Successful utilization of the EBSD technique as a common characterization tool in the halide perovskite community will enable scientists and engineers to develop maps of cross correlated properties, helping to unlock the full potential of this complex material system.     

Indoor Thin‐Film Photovoltaics: Progress and Challenges

Energy generation and consumption have always been an important component of social development. Interests in this field are beginning to shift to indoor photovoltaics (IPV) which can serve as power sources under low light conditions to meet the energy needs of rapidly growing fields, such as intelligence gathering and information processing which usually operate via the Internet‐of‐things (IoT). Since the power requirements for this purpose continue to decrease, IPV systems under low light may facilitate the realization of self‐powered high‐tech electronic devices connected through the IoT. This review discusses and compares the characteristics of different types of IPV devices such as those based on silicon, dye, III‐V semiconductors, organic compounds, and halide perovskites. Among them, specific attention is paid to perovskite photovoltaics which may potentially become a high performing IPV system due to the fascinating photophysics of the halide perovskite active layer. The limitations of such indoor application as they relate to the toxicity, stability, and electronic structure of halide perovskites are also discussed. Finally, strategies which could produce highly functional, nontoxic, and stable perovskite photovoltaics devices for indoor applications are proposed.     

Impact of PbI2 Passivation and Grain Size Engineering in CH3NH3PbI3 Solar Absorbers as Revealed by Carrier‐Resolved Photo‐Hall Technique

With power conversion efficiencies now exceeding 25%, hybrid perovskite solar cells require deeper understanding of defects and processing to further approach the Shockley‐Queisser limit. One approach for processing enhancement and defect reduction involves additive engineering—, e.g., addition of MASCN (MA = methylammonium) and excess PbI₂ have been shown to modify film grain structure and improve performance. However, the underlying impact of these additives on transport and recombination properties remains to be fully elucidated. In this study, a newly developed carrier‐resolved photo‐Hall (CRPH) characterization technique is used that gives access to both majority and minority carrier properties within the same sample and over a wide range of illumination conditions. CRPH measurements on n‐type MAPbI₃ films reveal an order of magnitude increase in carrier recombination lifetime and electron density for 5% excess PbI₂ added to the precursor solution, with little change noted in electron and hole mobility values. Grain size variation (120–2100 nm) and MASCN addition induce no significant change in carrier‐related parameters considered, highlighting the benign nature of the grain boundaries and that excess PbI₂ must predominantly passivate bulk defects rather than defects situated at grain boundaries. This study offers a unique picture of additive impact on MAPbI₃ optoelectronic properties as elucidated by the new CRPH approach.