Compositional and Solvent Engineering in Dion–Jacobson 2D Perovskites Boosts Solar Cell Efficiency and Stability

Hybrid halide 2D perovskites deserve special attention because they exhibit superior environmental stability compared with their 3D analogs. The closer interlayer distance discovered in 2D Dion–Jacobson (DJ) type of halide perovskites relative to 2D Ruddlesden–Popper (RP) perovskites implies better carrier charge transport and superior performance in solar cells. Here, the structure and properties of 2D DJ perovskites employing 3‐(aminomethyl)piperidinium (3AMP²⁺) as the spacing cation and a mixture of methylammonium (MA⁺) and formamidinium (FA⁺) cations in the perovskite cages are presented. Using single‐crystal X‐ray crystallography, it is found that the mixed‐cation (3AMP)(MA_0.75FA_0.25)₃Pb₄I₁₃ perovskite has a narrower bandgap, less distorted inorganic framework, and larger Pb? I? Pb angles than the single‐cation (3AMP)(MA)₃Pb₄I₁₃. Furthermore, the (3AMP)(MA_0.75FA_0.25)₃Pb₄I₁₃ films made by a solvent‐engineering method with a small amount of hydriodic acid have a much better film morphology and crystalline quality and more preferred perpendicular orientation. As a result, the (3AMP)(MA_0.75FA_0.25)₃Pb₄I₁₃‐based solar cells exhibit a champion power conversion efficiency of 12.04% with a high fill factor of 81.04% and a 50% average efficiency improvement compared to the pristine (3AMP)(MA)₃Pb₄I₁₃ cells. Most importantly, the 2D DJ 3AMP‐based perovskite films and devices show better air and light stability than the 2D RP butylammonium‐based perovskites and their 3D analogs.     

Increase in the Figure of Merit by Cd‐Substitution in Sn1–xPbxTe and Effect of Pb/Sn Ratio on Thermoelectric Properties

The effects of Cd‐doping on the thermoelectric properties of Sn_1–xPb_xTe are investigated and compared to the properties of the corresponding Sn_1–xPb_xTe solid solutions. The addition of Cd results in a reduction in the carrier concentration and changes in the physical properties, as well as in the conduction type of Sn_1–xPb_xTe. A significant increase in the power factor accompanied by a reduction in the thermal conductivity result in a higher figure of merit (ZT) for (Sn_1–xPb_x)_0.97Cd_0.03Te than that of undoped Sn_1–xPb_xTe. The maximum ZT (～0.7) values are observed for p‐type material with x = 0.36 at 560 K. Much higher values (ZT ～ 1.2 at 560 K for x = 0.73) are obtained on n‐type samples.     

n‐Type SnSe2 Oriented‐Nanoplate‐Based Pellets for High Thermoelectric Performance

It is reported that electron doped n‐type SnSe₂ nanoplates show promising thermoelectric performance at medium temperatures. After simultaneous introduction of Se deficiency and Cl doping, the Fermi level of SnSe₂ shifts toward the conduction band, resulting in two orders of magnitude increase in carrier concentration and a transition to degenerate transport behavior. In addition, all‐scale hierarchical phonon scattering centers, such as point defects, nanograin boundaries, stacking faults, and the layered nanostructures, cooperate to produce very low lattice thermal conductivity. As a result, an enhanced in‐plane thermoelectric figure of merit ZT_max of 0.63 is achieved for a 1.5 at% Cl doped SnSe_1.95 pellet at 673 K, which is much higher than the corresponding in‐plane ZT of pure SnSe₂ (0.08).     

Modern Processing and Insights on Selenium Solar Cells: The World's First Photovoltaic Device

The first solid‐state solar cells, fabricated ≈140 years ago, were based on selenium; these early studies initiated the modern research on photovoltaic materials. Selenium shows high absorption coefficient and mobility, making it an attractive absorber for high bandgap thin film solar cells. Moreover, the simplicity of a single element absorber, its low‐temperature processing, and intrinsic environmental stability enable the utilization of selenium in extremely cheap and scalable solar cells. In this paper, a detailed study of selenium solar cell fabrication is presented, and the key factors that affect the selenium film morphology and the resulting device efficiency are presented. Specifically, the crystallization process from amorphous film into functional crystalline device is studied. The importance of controlling the process is shown, and methods to align the growth orientation are suggested. Finally, the crystallization process under illumination, which has general importance for the fabrication of thin film photovoltaics, is investigated. Specifically for selenium, the illumination significantly improves the film morphology and leads to device efficiency of 5.2%, with open‐circuit voltage of 0.911 V, short‐circuit current density of 10.2 mA cm^?2, and fill factor of 55.0%. These findings form a solid foundation for future improvements of the photovoltaic material and device architecture.     

Lead‐Free Thermoelectrics: High Figure of Merit in p‐type AgSnmSbTem+2

Thermoelectric materials based on Pb‐free compositions are of considerable current interest in environmentally friendly power‐generation applications derived from waste‐heat sources. Here, a new study of the thermoelectric properties of the tin‐based compositions with the general formula AgSn_mSbTe_m+2 (m = 2, 4, 5, 7, 10, 14, 18) is presented, where the m value is used as the tuning parameter of the thermoelectric properties. The electrical conductivity, Seebeck coefficient, and thermal conductivity are measured from 300 K to 723 K and the resulting thermoelectric figure of merit is determined as a function of the SnTe/AgSbTe₂ ratio. A thermoelectric figure of merit ZT ≈1 is obtained at 710 K for m = 4, indicating that the system AgSn_mSbTe_m+2 holds great promise as an alternative p‐type, lead‐free, thermoelectric material.     

Enhancement of Thermoelectric Figure of Merit by the Insertion of MgTe Nanostructures in p‐type PbTe Doped with Na2Te

The thermoelectric properties of crystalline melt‐grown ingots of p‐type PbTe–xMgTe (x = 1–3 mol%) doped with Na₂Te (1–2 mol%) were investigated over the temperature range of 300 K to 810 K. While the powder X‐ray diffraction patterns show that all samples crystallize in the NaCl‐type structure with no MgTe or other phases present, transmission electron microscopy reveals ubiquitous MgTe nanoprecipitates in the PbTe. The very small amounts of MgTe in PbTe have only a small effect on the electrical transport properties of the system, while they have a large effect on thermal transport significantly reducing the lattice thermal conductivity. A ZT of 1.6 at 780 K is achieved for the PbTe containing 2% MgTe doped with 2% Na₂Te.     

Synthesis of [Tl4Se16]: a novel tetranuclear Tl polyselenide

(Ph₄P)₄[Tl₄Se₁₆] was prepared hydrothermally in a sealed pyrex tube by the reaction of TlCl, K₂Se₄ and Ph₄PCl in a 1:1:1 molar ratio at 110 °C for one day. The red crystals were obtained in 50% yield. Crystals of (Ph₄P)₄[Tl₄Se₁₆]: triclinic P (No. 2), Z=1, a=12.054(9), b=19.450(10), c=11.799(6) Å, α=104.63(4), β=98.86(6), γ=101.99(6)° and V=2555(3) ų at 23 °C, 2θ_max=40.0°, μ=120.7 cm⁻¹, D_calc=2.23. The structure was solved by direct methods. Number of data collected: 5206. Number of unique data having F_o²>3σ(F_o²): 1723. Final R=0.075 and R_w=0.089. [Tl₄Se₁₆]⁴⁻ consists of four, almost already linearly arranged, tetrahedral thallium centers which are coordinated by two chelating Se₄²⁻, two bridging Se₂²⁻ and four bridging Se²⁻ ligands. [Tl₄Se₁₆]⁴⁻ sits on an inversion center and possesses a central {Tl₂Se₂}²⁺ planar core. The Tl(1)–Tl(1)′ distance in this core is 3.583(6) Å. These two thallium atoms are then each linked to two cyclic Tl(Se₄) fragments via bridging Se₂²⁻ and Se²⁻ ligands forming Tl₂Se(Se₂) five-membered rings.     

Subtle Roles of Sb and S in Regulating the Thermoelectric Properties of N‐Type PbTe to High Performance

A high ZT (thermoelectric figure of merit) of ≈1.4 at 900 K for n‐type PbTe is reported, through modifying its electrical and thermal properties by incorporating Sb and S, respectively. Sb is confirmed to be an amphoteric dopant in PbTe, filling Te vacancies at low doping levels (<1%), exceeding which it enters into Pb sites. It is found that Sb‐doped PbTe exhibits much higher carrier mobility than similar Bi‐doped materials, and accordingly, delivers higher power factors and superior ZT . The enhanced electronic transport is attributed to the elimination of Te vacancies, which appear to strongly scatter n‐type charge carriers. Building on this result, the ZT of Pb_0.9875Sb_0.0125Te is further enhanced by alloying S into the Te sublattice. The introduction of S opens the bandgap of PbTe, which suppresses bipolar conduction while simultaneously increasing the electron concentration and electrical conductivity. Furthermore, it introduces point defects and induces second phase nanostructuring, which lowers the lattice thermal conductivity to ≈0.5 W m^?1 K^?1 at 900 K, making this material a robust candidate for high‐temperature (500–900 K) thermoelectric applications. It is anticipated that the insights provided here will be an important addition to the growing arsenal of strategies for optimizing the performance of thermoelectric materials.