3D‐Printed Cathodes of LiMn1−xFexPO4 Nanocrystals Achieve Both Ultrahigh Rate and High Capacity for Advanced Lithium‐Ion Battery

A 3D‐printing technology and printed 3D lithium‐ion batteries (3D‐printed LIBs) based on LiMn_0.21Fe_0.79PO₄@C (LMFP) nanocrystal cathodes are developed to achieve both ultrahigh rate and high capacity. Coin cells with 3D‐printed cathodes show impressive electrochemical performance: a capacity of 108.45 mAh g^?1 at 100 C and a reversible capacity of 150.21 mAh g^?1 at 10 C after 1000 cycles. In combination with simulation using a pseudo 2D hidden Markov model and experimental data of 3D‐printed and traditional electrodes, for the first time deep insight into how to achieve the ultrahigh rate performance for a cathode with LMFP nanocrystals is obtained. It is estimated that the Li‐ion diffusion in LMFP nanocrystal is not the rate‐limitation step for the rate to 100 C, however, that the electrolyte diffusion factors, such as solution intrinsic diffusion coefficient, efficiency porosity, and electrode thickness, will dominate ultrahigh rate performance of the cathode. Furthermore, the calculations indicate that the above factors play important roles in the equivalent diffusion coefficient with the electrode beyond a certain thickness, which determines the whole kinetic process in LIBs. This fundamental study should provide helpful guidance for future design of LIBs with superior electrochemical performance.     

Conservation genetics of rare trees restricted to subtropical montane cloud forests in southern China: a case study from <Emphasis Type="Italic">Quercus arbutifolia</Emphasis> (Fagaceae)

Montane cloud forests (MCFs), with their isolated nature, offer excellent opportunities to study the long-term effects of habitat fragmentation and the impacts of climate change. Quercus arbutifolia is a rare oak in MCFs of southern China and Vietnam. Its isolated populations, small population size and unique ecological niche make this species vulnerable to climate change and habitat loss. In this study, we used chloroplast (cpDNA) and nuclear (ITS) DNA sequences to investigate genetic divergence patterns and demographic history of five of the six known populations of Q. arbutifolia. Considering its small population size and fragmentation, Q. arbutifolia has unexpectedly high genetic diversity. The time since the most recent common ancestor of all cpDNA haplotypes was c. 10.25 Ma, and the rapid diversification of haplotypes occurred during the Quaternary. The maximum clade credibility chronogram of cpDNA haplotypes suggests that the DM population (Daming Mountain, Guangxi province) diverged early and rapidly became isolated from other populations. The Pearl River drainage system may have been the main geographic barrier between DM and other populations since the late Miocene. ITS data suggests that population expansion occurred during the last interglacial of the Quaternary. The combined effects of pre-Quaternary and Quaternary climatic and geological changes were the main drivers to the current genetic diversity and distribution pattern of Q. arbutifolia. Because of the high between-population genetic differentiation and high within-population genetic diversity of Q. arbutifolia, conservation efforts should be implemented for all populations, but if conservation resources are limited, populations DM, YZ (Mang Mountain, Hunan province) and ZZ (Daqin Mountain, Fujian province) should have priority.     

Lithium Fluoride Based Electron Contacts for High Efficiency n‐Type Crystalline Silicon Solar Cells

Low‐resistance contact to lightly doped n‐type crystalline silicon (c‐Si) has long been recognized as technologically challenging due to the pervasive Fermi‐level pinning effect. This has hindered the development of certain devices such as n‐type c‐Si solar cells made with partial rear contacts (PRC) directly to the lowly doped c‐Si wafer. Here, a simple and robust process is demonstrated for achieving mΩ cm² scale contact resistivities on lightly doped n‐type c‐Si via a lithium fluoride/aluminum contact. The realization of this low‐resistance contact enables the fabrication of a first‐of‐its‐kind high‐efficiency n‐type PRC solar cell. The electron contact of this cell is made to less than 1% of the rear surface area, reducing the impact of contact recombination and optical losses, permitting a power conversion efficiency of greater than 20% in the initial proof‐of‐concept stage. The implementation of the LiF_x/Al contact mitigates the need for the costly high‐temperature phosphorus diffusion, typically implemented in such a cell design to nullify the issue of Fermi level pinning at the electron contact. The timing of this demonstration is significant, given the ongoing transition from p‐type to n‐type c‐Si solar cell architectures, together with the increased adoption of advanced PRC device structures within the c‐Si photovoltaic industry.