Cadmium Free Cu2ZnSnS4 Solar Cells with 9.7% Efficiency

Cu₂ZnSnS₄(CZTS) thin‐film solar cell absorbers with different bandgaps can be produced by parameter variation during thermal treatments. Here, the effects of varied annealing time in a sulfur atmosphere and an ordering treatment of the absorber are compared. Chemical changes in the surface due to ordering are examined, and a downshift of the valence band edge is observed. With the goal to obtain different band alignments, these CZTS absorbers are combined with Zn_1?xSn_xO_y (ZTO) or CdS buffer layers to produce complete devices. A high open circuit voltage of 809 mV is obtained for an ordered CZTS absorber with CdS buffer layer, while a 9.7% device is obtained utilizing a Cd free ZTO buffer layer. The best performing devices are produced with a very rapid 1 min sulfurization, resulting in very small grains.     

Nanoscale Microstructure and Chemistry of Cu2ZnSnS4/CdS Interface in Kesterite Cu2ZnSnS4 Solar Cells

Sulfurization with various atmosphere and postheat treatments has been reported for earth abundant kesterite Cu₂ZnSnS₄ (CZTS) preparation as cost‐effective material for next‐generation solar cells. A full understanding of the nanoscale microstructure and chemistry of CZTS/CdS interface obtained from these different fabrication routes is currently lacking, yet is critical to developing optimal processing routes for high‐performance kesterite solar cells. Here, the first detailed investigation of the interfacial microstructure and chemistry of CdS/Cu₂ZnSnS₄ heterojunctions is presented. For CZTS obtained from sulfurization in a sulfur‐only atmosphere where highly defective surfaces are present, air annealing followed by etching in the initial stage of chemical bath deposition (CBD) process can effectively eliminate interfacial defects and allow the epitaxial growth of CBD‐CdS, improving the minority lifetime, open circuit voltage (V_OC), and fill factor (FF) of the devices, while blocking Cd diffusion and deteriorating short circuit current (J_sc). For CZTS from sulfurization in a combined sulfur and SnS atmosphere where CBD‐CdS can directly epitaxially grow on CZTS and Cd‐diffusion is clearly observed, associated devices show the longest lifetime and the highest efficiency of 8.76%. Epitaxial growth of CdS and Cd diffusion into CZTS are found to be two crucial features minimizing interfacial recombination and achieving high‐efficiency devices. This will not only enhance the understanding of the device structure and physics of kesterite based solar cells, but also provide an effective way for designing other chalcogenide heterojunction solar cells.     

Chemical Consequences of Alkali Inhomogeneity in Cu2ZnSnS4 Thin‐Film Solar Cells

This study offers new insight into the role of Na in Cu₂ZnSnS₄ (CZTS) thin film solar cells by studying samples with a spatially varying alkali distribution. This is achieved by omitting a diffusion barrier between the soda‐lime glass substrate and the Mo back contact, where compositional variations of the glass inherently result in non‐uniform alkali distributions in the CZTS. By correlating light beam induced current (LBIC) maps with secondary ion mass spectrometry composition maps, it is shown that samples containing regions of higher Na concentration (“hot spots”) have corresponding LBIC hot spots on comparable length scales. Samples containing an alkali diffusion barrier have lower LBIC dispersion; thus, LBIC can be used to evaluate non‐uniformity in CZTS devices, where a common cause is Na inhomogeneity. Moreover, it is shown that the Na hot spots are strongly correlated with other compositional variations in the device, including increased Cu in‐diffusion with the underlying MoS₂ layer and decreased diffusion of Cd to the back contact. Neither of these effects are well understood in CZTS devices, and neither have previously been correlated with the presence or absence of Na.     

Photovoltaic Materials and Devices Based on the Alloyed Kesterite Absorber (AgxCu1–x)2ZnSnSe4

The photovoltaic absorber Cu₂ZnSn(S_xSe_1–x)₄ (CZTSSe) has attracted interest in recent years due to the earth‐abundance of its constituents and the realization of high performance (12.6% efficiency). The open‐circuit voltage in CZTSSe devices is believed to be limited by absorber band tailing caused by the exceptionally high density of Cu/Zn antisites. By replacing Cu in CZTSSe with Ag, whose covalent radius is ≈15% larger than that of Cu and Zn, the density of I–II antisite defects is predicted to drop. The fundamental properties of the mixed Ag‐Cu kesterite compound are reported as a function of the Ag/(Ag + Cu) ratio. The extent of band tailing is shown to decrease with increasing Ag. This is verified by comparing the optical band gap extrapolated from transmission data with the position of the room‐temperature photoluminescence peak; these values converge for the pure‐Ag compound. Additionally, the pinning of the Fermi level in CZTSSe, attributed to heavy defect compensation and band tailing, is not observed in the pure‐Ag compound, offering further evidence of improved electronic structure. Finally, a device efficiency of 10.2% is reported for a device containing 10% Ag (no antireflection coating); this compares to ≈9% (avg) efficiency for the baseline pure‐Cu CZTSe.     

Preparation and optical properties of alloyed ZnxCd1‐xS/alginate core/shell nanoparticles

Zn_xCd_1‐xS/alginate core/shell nanoparticles were synthesized via a colloidal route by reacting zinc and cadmium ions with sulfide ions, followed by coating with alginate. The crystal structure, morphology, size and optical properties of the core/shell nanoparticles were characterized by X‐ray diffraction, transmission electron microscopy, UV/vis and photoluminescent spectra, respectively. The Zn_xCd_1‐xS nanoparticles are spherical and have a cubic structure with a mean crystalline size of 2–4 nm. The band gap of Zn_xCd_1‐xS/alginate core/shell nanoparticles increases with increasing Zn/Cd molar ratio, and the UV/vis absorption blue‐shifts correspondingly. Two emissions related to zinc and sulfide ion vacancies were observed for the Zn_xCd_1‐xS/alginate core/shell nanoparticles due to the surface changes from the alginate coating. A cadmium‐related emission was observed for both the uncovered Zn_xCd_1‐xS and Zn_xCd_1‐xS/alginate core/shell nanoparticles, which has a significant blue‐shift with increasing Zn/Cd molar ratio. Copyright © 2014 John Wiley & Sons, Ltd.     

Benign Solutions and Innovative Sequential Annealing Processes for High Performance Cu2ZnSn(Se,S)4 Photovoltaics

Solution‐based earth‐abundant Cu₂ZnSn(Se,S)₄ (CZTSSe) is proven to be a promising tool for thin‐film photovoltaic fabrication. Combining fully dissolved copper (Cu) and zinc/tin (Zn/Sn) hydrazinium constituents in an ethanolamine (EA) and dimethylsulfoxide (DMSO) solution mixture forms the CZTS precursor. All solutes in the precursor solution are intermixed on the molecular scale with excellent homogeneity. Sequential annealing steps under chalcogen vapor allow for enhanced grain growth while preventing the back contact from forming an excessively thick Mo(S,Se)₂ layer. The resulting devices achieve power conversion efficiencies of 7.5% under 1 sun conditions.     

Improved Heterojunction Quality in Cu2O-based Solar Cells Through the Optimization of Atmospheric Pressure Spatial Atomic Layer Deposited Zn1-xMgxO

Atmospheric pressure spatial atomic layer deposition (AP-SALD) was used to deposit n-type ZnO and Zn_1-xMg_xO thin films onto p-type thermally oxidized Cu₂O substrates outside vacuum at low temperature. The performance of photovoltaic devices featuring atmospherically fabricated ZnO/Cu₂O heterojunction was dependent on the conditions of AP-SALD film deposition, namely, the substrate temperature and deposition time, as well as on the Cu₂O substrate exposure to oxidizing agents prior to and during the ZnO deposition. Superficial Cu₂O to CuO oxidation was identified as a limiting factor to heterojunction quality due to recombination at the ZnO/Cu₂O interface. Optimization of AP-SALD conditions as well as keeping Cu₂O away from air and moisture in order to minimize Cu₂O surface oxidation led to improved device performance. A three-fold increase in the open-circuit voltage (up to 0.65 V) and a two-fold increase in the short-circuit current density produced solar cells with a record 2.2% power conversion efficiency (PCE). This PCE is the highest reported for a Zn_1-xMg_xO/Cu₂O heterojunction formed outside vacuum, which highlights atmospheric pressure spatial ALD as a promising technique for inexpensive and scalable fabrication of Cu₂O-based photovoltaics.     

Aging Effect of a Cu(In,Ga)(S,Se)2 Absorber on the Photovoltaic Performance of Its Cd‐Free Solar Cell Fabricated by an All‐Dry Process: Its Carrier Recombination Analysis

Cd‐free Cu(In,Ga)(S,Se)₂ (CIGSSe) solar cells are fabricated by an all‐dry process (a Cd‐free and all‐dry process CIGSSe solar cell) with aged CIGSSe thin film absorbers. The aged CIGSSe thin films are kept in a desiccator cabinet under partial pressure of oxygen of ≈200 Pa for aging time up to 10 months. It is reported for the first time that aged CIGSSe thin film with increased aging time results in significant enhancement of photovoltaic performance of Cd‐free and all‐dry process CIGSSe solar cells, regardless of the alkali treatment. Based on carrier recombination analysis, carrier recombination rates at the interface and in the depletion region of the Cd‐free and all‐dry process CIGSSe solar cells are reduced owing to avoidance of sputtering damage on CIGSSe absorber surface, which is consistent with the strong electron beam‐induced current signal near CIGSSe surface after the increased aging time. It is implied that the interface and near‐surface qualities are clearly improved through the increased aging time, which is attributable to the self‐forming of In_x(O,S)_y near CIGSSe surface, which acts as a buffer layer. Ultimately, the 22.0%‐efficient Cd‐free CIGSSe solar cell fabricated by all‐dry process is achieved with the aged Cs‐treated CIGSSe absorber with the aging time of 10 months.     

Electronic structure and band gap engineering of ZnO-based semiconductor alloy films

We have conducted first-principles total-energy density functional calculations to study the atomic structures, band structures and electronic structures of Zn_1 ? xM_xO (M = Be, Mg, Cd, Ag, Cu) semiconductor alloys. The Heyd–Scuseria–Ernzerhof hybrid functional has been performed to yield lattice constants and band gaps of Zn_1 ? xM_xO semiconductor in much better agreement with experimental data than with the standard local exchange correlation functional. We found that the strong coupling between O 2p and Cu 3d or Ag 4d bands plays a key role in narrowing of band gaps and leading to the half-metallic behaviour interpreted with the unique spatial distribution pattern between the highest occupied molecular orbital and the lowest unoccupied molecular orbital.     

Geogrid‐Inspired Nanostructure to Reinforce a CuxZnySnzS Nanowall Electrode for High‐Stability Electrochemical Energy Conversion Devices

Inspired by geogrids commonly applied in construction engineering to reinforce side slopes and retaining walls, the use of a “nano‐geogrid” to reinforce a Cu_x Zn_y Sn_z S (CZTS) nanowall electrode for application in electrochemical reactions is demonstrated. The CZTS nanowall electrode reinforced by the nano‐geogrid (denoted as NWD) shows not only remarkable mechanical and electrochemical stability but also considerable electrochemical performances. The NWD demonstrated as a counter electrode in a dye‐sensitized solar cell shows a power conversion efficiency of 7.44 ± 0.04%, comparable with the device using Pt as electrode, and also significantly improves device stability as compared with that afforded by an electrode comprising a CZTS nanowall without the nano‐geogrid (denoted as NOD). In addition, applying the NWD electrode as a cathode in photo‐electrochemical hydrogen evolution reactions (HERs) yields a photocurrent density of ?10 mA cm^?2 at ?0.162 V (vs RHE) under AM 1.5 illumination. Moreover, when HERs are conducted under extreme conditions, the NWD electrode remains intact, whereas the NOD electrode is completely peeled off after 10 min of reaction. Therefore, the concept of using a mimetic rational nanostructure could pave the way for the possibility of improving the performance and stability of various devices.     

Efficient Perovskite Solar Cells Fabricated by Co Partially Substituted Hybrid Perovskite

In the past years, hybrid perovskite materials have attracted great attention due to their superior optoelectronic properties. In this study, the authors report the utilization of cobalt (Co²⁺) to partially substitute lead (Pb²⁺) for developing novel hybrid perovskite materials, CH₃NH₃Pb_1‐xCo_xI₃ (where x is nominal ratio, x = 0, 0.1, 0.2 and 0.4). It is found that the novel perovskite thin films possess a cubic crystal structure with superior thin film morphology and larger grain size, which is significantly different from pristine thin film, which possesses the tetragonal crystal structure, with smaller grain size. Moreover, it is found that the 3d orbital of Co²⁺ ensures higher electron mobilities and electrical conductivities of the CH₃NH₃Pb_1‐xCo_xI₃ thin films than those of pristine CH₃NH₃Pb₄ thin film. As a result, a power conversion efficiency of 21.43% is observed from perovskite solar cells fabricated by the CH₃NH₃Pb_0.9Co_0.1I₃ thin film. Thus, the utilization of Co, partially substituting for Pb to tune physical properties of hybrid perovskite materials provides a facile way to boost device performance of perovskite solar cells.     

The Role of Hydrogen from ALD‐Al2O3 in Kesterite Cu2ZnSnS4 Solar Cells: Grain Surface Passivation

In this research, a new route of surface passivation is reported by introducing hydrogen from the atomic layer deposited (ALD) Al₂O₃ layer into pure sulfide Cu₂ZnSnS₄ (CZTS) solar cells. Different amounts of hydrogen are incorporated into the Cu₂ZnSnS₄/CdS interface through controlling the thickness of the ALD‐Al₂O₃ layer. The device with three cycles of ALD‐Al₂O₃ yields the highest efficiency of 8.08% (without antireflection coating) with improved open‐circuit voltage of up to 70 mV. With closer examination on the passivation route of ALD‐Al₂O₃, it is revealed by the surface chemisty study that the Al₂O₃ can be etched away by ammonium hydroxide in the CdS buffer deposition process. Instead, the hydrogen is detected within a shallow depth from the CZTS surface, and makes a significant difference in the measured distribution of contact potential difference and device performance. This may be interpreted by the effect of hydrogen passivation of the CZTS surface by curing dangling bonds at the surface of CZTS grains. This work may provide a new direction of further improving the performance of kesterite solar cells.     

Suppressed Deep Traps and Bandgap Fluctuations in Cu2CdSnS4 Solar Cells with ≈8% Efficiency

The identification of performance‐limiting factors is a crucial step in the development of solar cell technologies. Cu₂ZnSn(S,Se)₄‐based solar cells have shown promising power conversion efficiencies in recent years, but their performance remains inferior compared to other thin‐film solar cells. Moreover, the fundamental material characteristics that contribute to this inferior performance are unclear. In this paper, the performance‐limiting role of deep‐trap‐level‐inducing 2Cu_Zn+Sn_Zn defect clusters is revealed by comparing the defect formation energies and optoelectronic characteristics of Cu₂ZnSnS₄ and Cu₂CdSnS₄. It is shown that these deleterious defect clusters can be suppressed by substituting Zn with Cd in a Cu‐poor compositional region. The substitution of Zn with Cd also significantly reduces the bandgap fluctuations, despite the similarity in the formation energy of the Cu_Zn+Zn_Cu and Cu_Cd+Cd_Cu antisites. Detailed investigation of the Cu₂CdSnS₄ series with varying Cu/[Cd+Sn] ratios highlights the importance of Cu‐poor composition, presumably via the presence of V_Cu, in improving the optoelectronic properties of the cation‐substituted absorber. Finally, a 7.96% efficient Cu₂CdSnS₄ solar cell is demonstrated, which shows the highest efficiency among fully cation‐substituted absorbers based on Cu₂ZnSnS₄.     

Kesterite Thin‐Film Solar Cells: Advances in Materials Modelling of Cu2ZnSnS4

Quaternary semiconducting materials based on the kesterite (A₂BCX₄) mineral structure are the most promising candidates to overtake the current generation of light‐absorbing materials for thin‐film solar cells. Cu₂ZnSnS₄ (CZTS), Cu₂ZnSnSe₄ (CZTSe) and their alloy Cu₂ZnSn(Se,S)₄ consist of abundant, low‐cost and non‐toxic elements, unlike current CdTe and Cu(In,Ga)Se₂ based technologies. Zinc‐blende related structures are formed by quaternary compounds, but the complexity associated with the multi‐component system introduces difficulties in material growth, characterization, and application. First‐principles electronic structure simulations, performed over the past five years, that address the structural, electronic, and defect properties of this family of compounds are reviewed. Initial predictions of the bandgaps and crystal structures have recently been verified experimentally. The calculations highlight the role of atomic disorder on the cation sub‐lattice, as well as phase separation of Cu₂ZnSnS₄ into ZnS and CuSnS₃, on the material performance for light‐to‐electricity conversion in photovoltaic devices. Finally, the current grand challenges for materials modeling of thin‐film solar cells are highlighted.     

Is the Cu/Zn Disorder the Main Culprit for the Voltage Deficit in Kesterite Solar Cells?

Photovoltaic thin film solar cells based on kesterite Cu₂ZnSn(S_x,Se_1–x)₄ compounds (CZTSSe) have reached >12% sunlight‐to‐electricity conversion efficiency. This is still far from the >20% record devices known in Cu(In_1–y,Ga_y)Se₂ and CdTe parent technologies. A selection of >9% CZTSSe devices reported in the literature is examined to review the progress achieved over the past few years. These devices suffer from a low open‐circuit voltage (V_oc) never better than 60% of the V_{oc max}, which is expected from the Shockley‐Queisser radiative limit (S‐Q limit). The possible role of anionic (S/Se) distribution and of cationic (Cu/Zn) disorder on the V_oc deficit and on the ultimate photovoltaic performance of kesterite devices, are clarified here. While the S/Se anionic distribution is expected to be homogeneous for any ratio x, some grain‐to‐grain and other non‐uniformity over larger area can be found, as quantified on our CZTSSe films. Nevertheless, these anionic distributions can be considered to have a negligible impact on the V_oc deficit. On the Cu/Zn order side, even though significant bandgap changes (>10%) can be observed, a similar conclusion is brought from experimental devices and from calculations, still within the radiative S‐Q limit. The implications and future ways for improvement are discussed.     

Solution‐Processed TiO2 Nanoparticles as the Window Layer for CuIn(S,Se)2 Devices

As a wide‐bandgap semiconductor, titanium dioxide (TiO₂) with a porous structure has proven useful in dye‐sensitized solar cells, but its application in low‐cost, high‐efficiency inorganic photovoltaic devices based on materials such as Cu(InGa)Se₂ or Cu₂ZnSnS₄ is limited. Here, a thin film made from solution‐processed TiO₂ nanocrystals is demonstrated as an alternative to intrinsic zinc oxide (i‐ZnO) as the window layer of CuInS_xSe_1?x solar cells. The as‐synthesized, well‐dispersed, 6 nm TiO₂ nanocrystals are assembled into thin films with controllable thicknesses of 40, 80, and 160 nm. The TiO₂ nanocrystal films with thicknesses of 40 and 80 nm exhibit conversion efficiencies (6.2% and 6.33%, respectively) that are comparable to that of a layer of the typical sputtered i‐ZnO (6.42%). The conversion efficiency of the devices with a TiO₂ thickness of 160 nm decreases to 2.2%, owing to the large series resistance. A 9‐hour reaction time leads to aggregated nanoparticles with a much‐lower efficiency (2%) than that of the well‐dispersed TiO₂ nanoparticles prepared using a 15‐hour reaction time. Under optimized conditions, the champion TiO₂ nanocrystal‐film‐based device shows even higher efficiency (9.2%) than a control device employing a typical i‐ZnO film (8.6%).     

High‐Performance Planar Perovskite Solar Cells Using Low Temperature,Solution–Combustion‐Based Nickel Oxide Hole Transporting Layer with Efficiency Exceeding 20%

NiO_x hole transporting layer has been extensively studied in optoelectronic devices. In this paper, the low temperature, solution–combustion‐based method is employed to prepare the NiO_x hole transporting layer. The resulting NiO_x thin films show better quality and preferable energy alignment with perovskite thin film compared to high temperature sol–gel‐processed NiO_x. With this, high‐performance perovskite solar cells are fabricated successfully with power conversion efficiency exceeding 20% using a modified two‐step prepared MA_1?yFA_yPbI_3?xCl_x perovskite. This efficiency value is among the highest values for NiO_x‐based devices. Various characterizations and analyses provide evidence of better film quality, enhanced charge transport and extraction, and suppressed charge recombination. Meanwhile, the device exhibits much better device stability compared to sol–gel‐processed NiO_x and poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate)‐based devices.     

In Situ Grain Boundary Functionalization for Stable and Efficient Inorganic CsPbI2Br Perovskite Solar Cells

The phase instability and large energy loss are two obstacles to achieve stable and efficient inorganic‐CsPbI_3?xBr_x perovskite solar cells. In this work, stable cubic perovskite (α)‐phase CsPbI₂Br is successfully achieved by Pb(Ac)₂ functioning at the grain boundary under low temperature. Ac^? strongly coordinates with CsPbI₂Br to stabilize the α‐phase and also make the grain size smaller and film uniform by fast nucleation. PbO is formed in situ at the grain boundary by decomposing Pb(Ac)₂ at high‐temperature annealing. The semiconducting PbO effectively passivates the surface states, reduces the interface recombination, and promotes the charge transport in CsPbI₂Br perovskite solar cells. A 12% efficiency and good stability are obtained for in situ PbO‐passivated CsPbI₂Br solar cells, while Pb(Ac)₂‐passivated device exhibits 8.7% performance and the highest stability, much better than the control device with 8.5% performance and inferior stability. This article highlights the extrinsic ionic grain boundary functionalization to achieve stable and efficient inorganic CsPbI_3?xBr_x materials and the devices.     

Photovoltaic Device with over 5% Efficiency Based on an n‐Type Ag2ZnSnSe4 Absorber

The kesterite material Cu₂ZnSn(S,Se)₄ (CZTSSe) is an attractive earth‐abundant semiconductor for photovoltaics. However, the power conversion efficiency is limited by a large density of I–II antisite defects, which cause severe band tailing and open‐circuit voltage loss. Ag₂ZnSnSe₄ (AZTSe) is a promising alternative to CZTSSe with a substantially lower I–II antisite defect density and smaller band tailing. AZTSe is weakly n‐type, and this study reports for the first time on how the carrier density is impacted by stoichiometry. This study presents the first‐ever photovoltaic device based on AZTSe, which exhibits an efficiency of 5.2%, which is the highest value reported for an n‐type thin‐film absorber. Due to the weakly n‐type nature of the absorber, a new architecture is employed (SnO:F/AZTSe/MoO₃/ITO) to replace conventional contacts and buffer materials. Using this platform, it is shown that the band tailing parameter in AZTSe more closely resembles that of CIGSe than CZTSSe, underscoring the strong promise of this absorber. In demonstrating the ability to collect photogenerated carriers from AZTSe, this study paves the way for novel thin‐film heterojunction architectures where light absorption in the n‐type device layer can supplement absorption in the p‐type layer as opposed to producing a net optical loss.     

Atomic‐Scale Observation of Oxygen Substitution and Its Correlation with Hole‐Transport Barriers in Cu2ZnSnSe4 Thin‐Film Solar Cells

Kesterite‐type Cu₂ZnSn(S,Se)₄ has been extensively studied over the past several years, with researchers searching for promising candidates for indium‐ and gallium‐free inexpensive absorbers in high‐efficiency thin‐film solar cells. Many notable experimental and theoretical studies have dealt with the effects of intrinsic point defects, Cu/Zn/Sn nonstoichiometry, and cation impurities on cell performance. However, there have been few systematic investigations elucidating the distribution of oxygen at an atomic scale and the correlation between oxygen substitution and charge transport despite unavoidable incorporation of oxygen from the ambient atmosphere during thin‐film fabrication. Using energy‐dispersive X‐ray spectroscopy, scanning transmission electron microscopy, and electron energy‐loss spectroscopy, the presence of nanoscale layers is directly demonstrated in which oxygen is substantially substituted for Se, near grain boundaries in polycrystalline Cu₂ZnSnSe₄ films. Density‐functional theory calculations also show that oxygen substitution remarkably lowers the valence band maximum and subsequently widens the overall bandgap. Consequently, anion modification by oxygen can make a major contribution to the formation of a robust barrier blocking the holes from bulk grains into grain boundaries, thereby efficiently attaining electron?hole separation. The findings provide crucial insights into achieving better energy conversion efficiency in kesterite‐based thin‐film solar cells through optimum control of oxidation during the fabrication process.