Impact of Nanoscale Elemental Distribution in High‐Performance Kesterite Solar Cells

The effort to develop earth‐abundant kesterite solar cells has led to an approximate doubling of the power conversion efficiency over the past five years to 12.6%, primarily due to increases in short‐circuit current and fill factor; open‐circuit voltage has resisted similar change, limiting further efficiency improvement. In the present investigation, Auger nanoprobe spectroscopy, X‐ray/ultraviolet photoelectron spectroscopy, and device characterization are used to provide a comprehensive understanding of the role of grain boundaries and interfaces in limiting performance in kesterite‐based devices. High photovoltaic performance is found to correlate with grain boundaries that are Cu‐depleted and enriched with SnOx. The formation of this bulk‐like oxide at grain boundaries with type I band offset provides a unique effective passivation that limits electron‐hole recombination. Building on these new insights, photovoltaic device simulations are performed that show optimized electrostatic designs can compensate for bulk defects, allowing efficiencies closer to the theoretical limit.     

Overcoming Efficiency Limitations of SnS‐Based Solar Cells

Thin‐film solar cells are made by vapor deposition of Earth‐abundant materials: tin, zinc, oxygen and sulfur. These solar cells had previously achieved an efficiency of about 2%, less than 1/10 of their theoretical potential. Loss mechanisms are systematically investigated and mitigated in solar cells based on p‐type tin monosulfide, SnS, absorber layers combined with n‐type zinc oxysulfide, Zn(O,S) layers that selectively transmit electrons, but block holes. Recombination at grain boundaries is reduced by annealing the SnS films in H₂S to form larger grains with fewer grain boundaries. Recombination near the p‐SnS/n‐Zn(O,S) junction is reduced by inserting a few monolayers of SnO₂ between these layers. Recombination at the junction is also reduced by adjusting the conduction band offset by tuning the composition of the Zn(O,S), and by reducing its free electron concentration with nitrogen doping. The resulting cells have an efficiency over 4.4%, which is more than twice as large as the highest efficiency obtained previously by solar cells using SnS absorber layers.     

Aging Effect of a Cu(In,Ga)(S,Se)2 Absorber on the Photovoltaic Performance of Its Cd‐Free Solar Cell Fabricated by an All‐Dry Process: Its Carrier Recombination Analysis

Cd‐free Cu(In,Ga)(S,Se)₂ (CIGSSe) solar cells are fabricated by an all‐dry process (a Cd‐free and all‐dry process CIGSSe solar cell) with aged CIGSSe thin film absorbers. The aged CIGSSe thin films are kept in a desiccator cabinet under partial pressure of oxygen of ≈200 Pa for aging time up to 10 months. It is reported for the first time that aged CIGSSe thin film with increased aging time results in significant enhancement of photovoltaic performance of Cd‐free and all‐dry process CIGSSe solar cells, regardless of the alkali treatment. Based on carrier recombination analysis, carrier recombination rates at the interface and in the depletion region of the Cd‐free and all‐dry process CIGSSe solar cells are reduced owing to avoidance of sputtering damage on CIGSSe absorber surface, which is consistent with the strong electron beam‐induced current signal near CIGSSe surface after the increased aging time. It is implied that the interface and near‐surface qualities are clearly improved through the increased aging time, which is attributable to the self‐forming of In_x(O,S)_y near CIGSSe surface, which acts as a buffer layer. Ultimately, the 22.0%‐efficient Cd‐free CIGSSe solar cell fabricated by all‐dry process is achieved with the aged Cs‐treated CIGSSe absorber with the aging time of 10 months.     

Simultaneous Contact and Grain‐Boundary Passivation in Planar Perovskite Solar Cells Using SnO2‐KCl Composite Electron Transport Layer

The performance of perovskite solar cells is sensitive to detrimental defects, which are prone to accumulate at the interfaces and grain boundaries of bulk perovskite films. Defect passivation at each region will lead to reduced trap density and thus less nonradiative recombination loss. However, it is challenging to passivate defects at both the grain boundaries and the bottom charge transport layer/perovskite interface, mainly due to the solvent incompatibility and complexity in perovskite formation. Here SnO₂‐KCl composite electron transport layer (ETL) is utilized in planar perovskite solar cells to simultaneously passivate the defects at the ETL/perovskite interface and the grain boundaries of perovskite film. The K and Cl ions at the ETL/perovskite interface passivate the ETL/perovskite contact. Meanwhile, K ions from the ETL can diffuse through the perovskite film and passivate the grain boundaries. An enhancement of open‐circuit voltage from 1.077 to 1.137 V and a corresponding power conversion efficiency increasing from 20.2% to 22.2% are achieved for the devices using SnO₂‐KCl composite ETL. The composite ETL strategy reported herein provides an avenue for defect passivation to further increase the efficiency of perovskite solar cells.     

Advanced Alkali Treatments for High‐Efficiency Cu(In,Ga)Se2 Solar Cells on Flexible Substrates

Flexible, lightweight Cu(In,Ga)Se₂ (CIGS) solar cells grown on polymer substrates are a promising technology with fast growing market prospects. However, power conversion efficiencies of solar cells grown at low temperatures (≈450 °C) remain below the efficiencies of cells grown at high temperature on glass substrates. This contribution discusses the impact on cell efficiency of process improvements of low‐temperature CIGS deposition on flexible polyimide and glass substrates. Different strategies for incorporation of alkali elements into CIGS are evaluated based on a large number of depositions. Postdeposition treatment with heavy alkali (here RbF) enables a thickness reduction of the CdS buffer layer and increases the open‐circuit voltage. Na supply during 3rd stage CIGS deposition positively impacts the cell performance. Coevaporation of heavy alkali (e.g., RbF) during capping layer deposition mitigates the adverse shunting associated with high Cu contents, yielding highest efficiencies with near‐stoichiometric absorber compositions. Furthermore, optimization of the deposition sequence results in absorbers with a 1 µm wide notch region with nearly constant bandgap minimum. The improved processes result in a record cell efficiency of 20.8% for CIGS on flexible substrate.     

Highly stable and Efficient Perovskite Solar Cells Based on FAMA‐Perovskite‐Cu:NiO Composites with 20.7% Efficiency and 80.5% Fill Factor

To solve critical issues related to device stability and performance of perovskite solar cells (PSCs), FA_0.026MA_0.974PbI_3?yCl_y‐Cu:NiO (formamidinium methylammonium (FAMA)‐perovskite‐Cu:NiO) and Al₂O₃/Cu:NiO composites are developed and utilized for fabrication of highly stable and efficient PSCs through fully‐ambient‐air processes. The FAMA‐perovskite‐Cu:NiO composite crystals prepared without using any antisolvents not only improve the perovskite film quality with large‐size crystals and less grain boundaries but also tailor optical and electronic properties and suppress charge recombination with reduction of trap density. A champion device based on the composites as light absorber and Al₂O₃/Cu:NiO interfacial layer between electron transport layer and active layer yields power conversion efficiency (PCE) of 20.67% with V_OC of 1.047 V, J_SC of 24.51 mA cm^?2, and fill factor of 80.54%. More importantly, such composite‐based PSCs without encapsulation show significant enhancement in long‐term air‐stability, thermal‐ and photostability with retaining 97% of PCE over 240 d under ambient conditions (25–30 °C, 45–55% humidity).     

Atomic‐Scale Observation of Oxygen Substitution and Its Correlation with Hole‐Transport Barriers in Cu2ZnSnSe4 Thin‐Film Solar Cells

Kesterite‐type Cu₂ZnSn(S,Se)₄ has been extensively studied over the past several years, with researchers searching for promising candidates for indium‐ and gallium‐free inexpensive absorbers in high‐efficiency thin‐film solar cells. Many notable experimental and theoretical studies have dealt with the effects of intrinsic point defects, Cu/Zn/Sn nonstoichiometry, and cation impurities on cell performance. However, there have been few systematic investigations elucidating the distribution of oxygen at an atomic scale and the correlation between oxygen substitution and charge transport despite unavoidable incorporation of oxygen from the ambient atmosphere during thin‐film fabrication. Using energy‐dispersive X‐ray spectroscopy, scanning transmission electron microscopy, and electron energy‐loss spectroscopy, the presence of nanoscale layers is directly demonstrated in which oxygen is substantially substituted for Se, near grain boundaries in polycrystalline Cu₂ZnSnSe₄ films. Density‐functional theory calculations also show that oxygen substitution remarkably lowers the valence band maximum and subsequently widens the overall bandgap. Consequently, anion modification by oxygen can make a major contribution to the formation of a robust barrier blocking the holes from bulk grains into grain boundaries, thereby efficiently attaining electron?hole separation. The findings provide crucial insights into achieving better energy conversion efficiency in kesterite‐based thin‐film solar cells through optimum control of oxidation during the fabrication process.     

Photovoltaic Materials and Devices Based on the Alloyed Kesterite Absorber (AgxCu1–x)2ZnSnSe4

The photovoltaic absorber Cu₂ZnSn(S_xSe_1–x)₄ (CZTSSe) has attracted interest in recent years due to the earth‐abundance of its constituents and the realization of high performance (12.6% efficiency). The open‐circuit voltage in CZTSSe devices is believed to be limited by absorber band tailing caused by the exceptionally high density of Cu/Zn antisites. By replacing Cu in CZTSSe with Ag, whose covalent radius is ≈15% larger than that of Cu and Zn, the density of I–II antisite defects is predicted to drop. The fundamental properties of the mixed Ag‐Cu kesterite compound are reported as a function of the Ag/(Ag + Cu) ratio. The extent of band tailing is shown to decrease with increasing Ag. This is verified by comparing the optical band gap extrapolated from transmission data with the position of the room‐temperature photoluminescence peak; these values converge for the pure‐Ag compound. Additionally, the pinning of the Fermi level in CZTSSe, attributed to heavy defect compensation and band tailing, is not observed in the pure‐Ag compound, offering further evidence of improved electronic structure. Finally, a device efficiency of 10.2% is reported for a device containing 10% Ag (no antireflection coating); this compares to ≈9% (avg) efficiency for the baseline pure‐Cu CZTSe.     

Ultrathin Perovskite Monocrystals Boost the Solar Cell Performance

Grains and grain boundaries play key roles in determining halide perovskite‐based optoelectronic device performance. Halide perovskite monocrystalline solids with large grains, smaller grain boundaries, and uniform surface morphology improve charge transfer and collection, suppress recombination loss, and thus are highly favorable for developing efficient solar cells. To date, strategies of synthesizing high‐quality thin monocrystals (TMCs) for solar cell applications are still limited. Here, by combining the antisolvent vapor‐assisted crystallization and space‐confinement strategies, high‐quality millimeter sized TMCs of methylammonium lead iodide (MAPbI₃) perovskites with controlled thickness from tens of nanometers to several micrometers have been fabricated. The solar cells based on these MAPbI₃ TMCs show power conversion efficiency (PCE) of 20.1% which is significantly improved compared to their polycrystalline counterparts (PCE) of 17.3%. The MAPbI₃ TMCs show large grain size, uniform surface morphology, high hole mobility (up to 142 cm² V^?1 s^?1), as well as low trap (defect) densities. These properties suggest that TMCs can effectively suppress the radiative and nonradiative recombination loss, thus provide a promising way for maximizing the efficiency of perovskite solar cells.     

Reducing Saturation‐Current Density to Realize High‐Efficiency Low‐Bandgap Mixed Tin–Lead Halide Perovskite Solar Cells

The unsatisfactory performance of low‐bandgap mixed tin (Sn)–lead (Pb) halide perovskite subcells has been one of the major obstacles hindering the progress of the power conversion efficiencies (PCEs) of all‐perovskite tandem solar cells. By analyzing dark‐current density and distribution, it is identified that charge recombination at grain boundaries is a key factor limiting the performance of low‐bandgap mixed Sn–Pb halide perovskite subcells. It is further found that bromine (Br) incorporation can effectively passivate grain boundaries and lower the dark current density by two–three orders of magnitude. By optimizing the Br concentration, low‐bandgap (1.272 eV) mixed Sn–Pb halide perovskite solar cells are fabricated with open‐circuit voltage deficits as low as 0.384 V and fill factors as high as 75%. The best‐performing device demonstrates a PCE of >19%. The results suggest an important direction for improving the performance of low‐bandgap mixed Sn–Pb halide perovskite solar cells.     

Obtaining Large Columnar CdTe Grains and Long Lifetime on Nanocrystalline CdSe,MgZnO, or CdS Layers

CdTe solar cells have reached efficiencies comparable to multicrystalline silicon and produce electricity at costs competitive with traditional energy sources. Recent efficiency gains have come partly from shifting from the traditional CdS window layer to new materials such as CdSe and MgZnO, yet substantial headroom still exists to improve performance. Thin film technologies including Cu(In,Ga)Se₂, perovskites, Cu₂ZnSn(S,Se)₄, and CdTe inherently have many grain boundaries that can form recombination centers and impede carrier transport; however, grain boundary engineering has been difficult and not practical. In this work, it is demonstrated that wide columnar grains reaching through the entire CdTe layer can be achieved by aggressive postdeposition CdTe recrystallization. This reduces the grain structure constraints imposed by nucleation on nanocrystalline window layers and enables diverse window layers to be selected for other properties critical for electro‐optical applications. Computational simulations indicate that increasing grain size from 1 to 7 µm can be equivalent to decreasing grain‐boundary recombination velocity by three orders of magnitude. Here, large high‐quality grains enable CdTe lifetimes exceeding 50 ns.     

Over 14% Efficiency of Directly Sputtered Cu(In,Ga)Se2 Absorbers without Postselenization by Post‐Treatment of Alkali Metals

Direct sputtering of a single quaternary Cu(In,Ga)Se₂ (CIGS) target without postselenization is a promising approach to fabricating CIGS absorbers. However, the device efficiency of the quaternary‐sputtered CIGS is limited to 10%–11% due to the low and uncontrollable Se supply during the quaternary sputtering process. Here, an enhanced efficiency of 14.1% is reported by directly sputtering from a CIGS target without extra Se supply followed by sequential postdeposition treatments (PDT) of NaF and KF. The effects of different post‐treatments of alkali metals on quaternary‐sputtered CIGS thin films are discussed in detail. A Cu‐depleted surface is not observed in the quaternary‐sputtered CIGS thin films after KF‐PDT, different from the observation in the coevaporated CIGS, in which the Cu‐depleted surface layer induced by KF‐PDT enhances the efficiency. On the other hand, it is found that KF‐PDT reduces Se vacancies more effectively than NaF‐PDT, which could be another electrically benign behavior of KF‐PDT. The effective passivation of Se vacancies after KF‐PDT overcomes the Se‐poor nature of the quaternary sputtering process without postselenization. Therefore, KF‐PDT combined with Na doping, which is known to annihilate In_Cu defects, significantly improves minority carrier lifetime and cell performance.     

Direct Imaging of Cl‐ and Cu‐Induced Short‐Circuit Efficiency Changes in CdTe Solar Cells

To achieve high‐efficiency polycrystalline CdTe‐based thin‐film solar cells, the CdTe absorbers must go through a post‐deposition CdCl₂ heat treatment followed by a Cu diffusion step. To better understand the roles of each treatment with regard to improving grains, grain boundaries, and interfaces, CdTe solar cells with and without Cu diffusion and CdCl₂ heat treatments are investigated using cross‐sectional electron beam induced current, electron backscatter diffraction, and scanning transmission electron microscope techniques. The evolution of the cross‐sectional carrier collection profile due to these treatments that cause an increase in short‐circuit current and higher open‐circuit voltage are identified. Additionally, an increased carrier collection in grain boundaries after either/both of these treatments is revealed. The increased current at the grain boundaries is shown to be due to the presence of a space charge region with an intrinsic carrier collection profile width of ≈350 nm. Scanning transmission electron microscope electron‐energy loss spectroscopy shows a decreased Te and increased Cl concentration in grain boundaries after treatment, which causes the inversion. Each treatment improves the overall carrier collection efficiency of the cell separately, and, therefore, the benefits realized by each treatment are shown to be independent of each other.     

Identifying the Impact of Surface Recombination at Electrodes in Organic Solar Cells by Means of Electroluminescence and Modeling

This work reports on combining current‐voltage characteristics, electroluminescence (EL) measurements, and modeling to identify the selectivity of the electrodes in bulk‐heterojunction organic solar cells. Devices with the same photoactive layer but different contact materials are compared and the impact of surface recombination at the contacts on their performance is determined. The open‐circuit voltage, V _OC, depends strongly on the selectivity of the electrodes and it is observed that the EL signal of cells with lower V _OC is dramatically reduced. This is ascribed to an enhanced rate of surface recombination, which is a non‐radiative recombination pathway and does therefore not contribute to the EL yield. In addition, these cells have a lower current in forward direction despite the fact that the surface recombination occurs in addition to the recombination in the bulk. A theoretical model was set up and in the corresponding numerical simulations all three findings (lower V _OC, strongly reduced EL signal and lower forward current) could be clearly reproduced by varying just one single parameter which determines the selectivity of the electrode.     

Interplay of Optical,Morphological, and Electronic Effects of ZnO Optical Spacers in Highly Efficient Polymer Solar Cells

Optical spacers based on metal oxide layers have been intensively studied in poly(3‐hexylthiophene) (P3HT) based polymer solar cells for optimizing light distribution inside the device, but to date, the potential of such a metal oxide spacer to improve the electronic performance of the polymer solar cells simultaneously has not yet be investigated. Here, a detailed study of performance improvement in high efficient polymer solar cells by insertion of solution‐processed ZnO optical spacer using ethanolamine surface modification is reported. Insertion of the modified ZnO optical spacer strongly improves the performance of polymer solar cells even in the absence of an increase in light absorption. The electric improvements of the device are related to improved electron extraction, reduced contact barrier, and reduced recombination at the cathode. Importantly, it is shown for the first time that the morphology of optical spacer layer is a crucial parameter to obtain highly efficient solar cells in normal device structures. By optimizing optical spacer effects, contact resistance, and morphology of ZnO optical spacers, poly[[4,8‐bis[(2‐ethylhexyl)oxy]benzo[1,2‐b:4,5‐b′]dithiophene‐2,6diyl] [3‐fluoro‐2‐[(2‐ethylhexyl)carbonyl] thieno[3,4‐b]thiophenediyl]] (PTB7):[6,6]‐phenyl‐C71‐butyric acid (PC₇₀BM) bulk heterojunction solar cells with conversion efficiency of 7.6% are obtained in normal device structures with all‐solution‐processed interlayers.     

Impact of PbI2 Passivation and Grain Size Engineering in CH3NH3PbI3 Solar Absorbers as Revealed by Carrier‐Resolved Photo‐Hall Technique

With power conversion efficiencies now exceeding 25%, hybrid perovskite solar cells require deeper understanding of defects and processing to further approach the Shockley‐Queisser limit. One approach for processing enhancement and defect reduction involves additive engineering—, e.g., addition of MASCN (MA = methylammonium) and excess PbI₂ have been shown to modify film grain structure and improve performance. However, the underlying impact of these additives on transport and recombination properties remains to be fully elucidated. In this study, a newly developed carrier‐resolved photo‐Hall (CRPH) characterization technique is used that gives access to both majority and minority carrier properties within the same sample and over a wide range of illumination conditions. CRPH measurements on n‐type MAPbI₃ films reveal an order of magnitude increase in carrier recombination lifetime and electron density for 5% excess PbI₂ added to the precursor solution, with little change noted in electron and hole mobility values. Grain size variation (120–2100 nm) and MASCN addition induce no significant change in carrier‐related parameters considered, highlighting the benign nature of the grain boundaries and that excess PbI₂ must predominantly passivate bulk defects rather than defects situated at grain boundaries. This study offers a unique picture of additive impact on MAPbI₃ optoelectronic properties as elucidated by the new CRPH approach.     

Tailoring Impurity Distribution in Polycrystalline CdTe Solar Cells for Enhanced Minority Carrier Lifetime

Passivation of grain boundaries (GBs) and interfaces to suppress recombination and to improve minority carrier lifetime (MCLT) is essential for the functionality of devices based on polycrystalline materials. Improvement of MCLT is believed to be a very promising way to bring CdTe solar cells to the next efficiency level. However, which parameters significantly affect MCLT is not well understood. Here, high‐efficiency CdTe solar cells in an unconventional inverted structure are used to approach this issue. Advanced characterization tools such as secondary ion mass spectroscopy 3D chemical imaging, atom probe tomography, and X‐ray photoelectron spectroscopy are used to detect small amounts of impurities at GBs and are synergetically used together with time resolved photoluminescence measurements to correlate impurity distribution with electronic properties in CdTe solar cells. MCLT increases by an order of magnitude upon sulfur diffusion along GBs of the CdTe layer, which can occur by an elemental exchange with oxygen. Chlorine segregates at GBs and at the CdS/CdTe interface and bonding to cadmium and tellurium is indicated. CdTe solar cells in the inverted structure are presented with a certified efficiency of 13.5%. The results give guidance to further improve the performance of CdTe solar cells.     

Confined and Chemically Flexible Grain Boundaries in Polycrystalline Compound Semiconductors

Grain boundaries (GBs) in polycrystalline Cu(In,Ga)Se₂ thin films exhibit only slightly enhanced recombination, as compared with the grain interiors, allowing for very high power‐conversion efficiencies of more than 20% in the corresponding solar‐cell devices. This work highlights the specific compositional and electrical properties of Cu(In,Ga)Se₂ GBs by application of appropriate subnanometer characterisation techniques: inline electron holography, electron energy‐loss spectroscopy, and atom‐probe tomography. It is found that changes of composition at the GBs are confined to regions of only about 1 nm in width. Therefore, these compositional changes are not due to secondary phases but atomic or ionic redistribution within the atomic planes close to the GBs. For different GBs in the Cu(In,Ga)Se₂ thin film investigated, different atomic or ionic redistributions are also found. This chemical flexibility makes polycrystalline Cu(In,Ga)Se₂ thin films particularly suitable for photovoltaic applications.     

Progress of Surface Science Studies on ABX3‐Based Metal Halide Perovskite Solar Cells

ABX₃ type metal halide perovskite solar cells (PSCs) have shown efficiencies over 25%, rocketing toward their theoretical limit. To gain the full potential of PSCs relies on the understanding of the device working mechanisms and recombination, the material quality, and the match of energy levels in the device stacks. In this review, the importance of designing PSCs from the viewpoint of surface/interface science studies is presented. For this purpose, recent case studies are discussed to demonstrate how probing of local heterogeneities (e.g., grains, grain boundaries, atomic structure, etc.) in perovskites by surface science techniques can help correlate material properties and PSC device performance. At the solar cell device level with active areas larger than millimeter scale, the ensemble average measurement techniques can characterize the overall average properties of perovskite films as well as their adjacent layers and provide clues to understand better the solar cell parameters. How generation and healing of electronic defects in perovskite films limit the device efficiency, reproducibility, and stability, and induce the time‐dependent transient behavior in the current‐voltage curves are also the central focus of this review. On the basis of these studies, strategies to further improve efficiency and stability, as well as reducing hysteresis are presented.     

Quantifying the Nongeminate Recombination Dynamics in Nonfullerene Bulk Heterojunction Organic Solar Cells

In this study, a comprehensive analytical model to quantify the total nongeminate recombination losses, originating from bimolecular as well as bulk and surface trap‐assisted recombination mechanisms in nonfullerene‐based bulk heterojunction organic solar cells is developed. This proposed model is successfully employed to obtain the different contributions to the recombination current of the investigated solar cells under different illumination intensities. Additionally, the model quantitatively describes the experimentally measured open‐circuit voltage versus light intensity dependence. Most importantly, it is possible to calculate the experimental results with the same fitting parameter values from the presented model. The validity of this model is also proven by a combination of other independent, steady‐state, and transient experimental techniques. This new powerful analytical tool will enable researchers in the photovoltaic community to take into account the synergetic contribution from all relevant types of nongeminate recombination losses in different optoelectronic systems and target their analysis of recombination dynamics at any operating voltage.