The Development of Hydrazine‐Processed Cu(In,Ga)(Se,S)2 Solar Cells

The hydrazine‐based deposition of Cu(In,Ga)(S,Se)₂ (CIGS) thin films has attracted considerable attention in recent years due to its potential for the high‐throughput production of photovoltaic devices based on this absorber material. This article provides an introduction as well as presenting a complete picture of the current status of hydrazine‐based CIGS solar‐cell fabrication, including the three major steps of this deposition process: dissolution of the precursor materials in hydrazine, deposition of a film from the resulting precursor solution, and the completion and characterization of a photovoltaic device following absorber deposition. Recent discoveries are then discussed, regarding the dissolution chemistry of the relevant precursor complexes in hydrazine, which together represent the true foundation of this processing method. Recent studies on CIGS film formation are then summarized, including the control and analysis of the crystalline phase, electronic bandgap, and film morphology. Finally, the latest progress in high‐performance device fabrication is highlighted, with a focus on optoelectronic characterization including current–voltage, junction capacitance, and minority carrier lifetime measurements. Finally, a discussion and future outlook is provided.     

Design Meets Nature: Tetrahedrite Solar Absorbers

Computational inverse design and consequent experimental results allow for the identification of new tetrahedrite‐mineral compositions as promising absorber candidates in drift‐based thin‐film solar cells. In device simulations, cell efficiencies above 20% are modeled with absorber layers as thin as 250 nm. These new compositions thus open opportunities for realization of a new class of high‐efficiency thin‐film solar cell.     

CuSbSe2 as a Potential Photovoltaic Absorber Material: Studies from Theory to Experiment

CuSbSe₂ appears to be a promising absorber material for thin‐film solar cells due to its attractive optical and electrical properties, as well as earth‐abundant, low‐cost, and low‐toxic constituent elements. However, no systematic study on the fundamental properties of CuSbSe₂ has been reported, such as defect physics, material, optical, and electrical properties, which are highly relevant for photovoltaic application. First, using density functional theory calculations, CuSbSe₂ is shown to have benign defect properties, i.e., free of recombination‐center defects, and flexible defect and carrier concentration which can be tuned through the control of growth condition. Next, systematic material, optical, and electrical characterizations uncover many unexplored fundamental properties of CuSbSe₂ including band position, temperature‐dependent band gap energy, Raman spectrum, and so on, thus providing a solid foundation for further photovoltaic research. Finally, a prototype CuSbSe₂‐based thin film solar cell is fabricated by a hydrazine solution process. The systematic theoretical and experimental investigation, combined with the preliminary efficiency, confirms the great potential of CuSbSe₂ for thin‐film solar cell applications.     

Solution‐Based Silicon in Thin‐Film Solar Cells

Solution‐based semiconductors give rise to the next generation of thin‐film electronics. Solution‐based silicon as a starting material is of particular interest because of its favorable properties, which are already vastly used in conventional electronics. Here, the application of a silicon precursor based on neopentasilane for the preparation of thin‐film solar cells is reported for the first time, and, for the first time, a performance similar to conventional fabrication methods is demonstrated. Because three different functional layers, n‐type contact layer, intrinsic absorber, and p‐type contact layer, have to be stacked on top of each other, such a device is a very demanding benchmark test of performance of solution‐based semiconductors. Complete amorphous silicon n‐i‐p solar cells with an efficiency of 3.5% are demonstrated, which significantly exceeds previously reported values.     

Thin‐Film Solar Cells with InP Absorber Layers Directly Grown on Nonepitaxial Metal Substrates

The design and performance of solar cells based on InP grown by the nonepitaxial thin‐film vapor–liquid–solid (TF‐VLS) growth technique is investigated. The cell structure consists of a Mo back contact, p‐InP absorber layer, n‐TiO₂ electron selective contact, and indium tin oxide transparent top electrode. An ex situ p‐doping process for TF‐VLS grown InP is introduced. Properties of the cells such as optoelectronic uniformity and electrical behavior of grain boundaries are examined. The power conversion efficiency of first generation cells reaches 12.1% under simulated 1 sun illumination with open‐circuit voltage (V_OC) of 692 mV, short‐circuit current (J_SC) of 26.9 mA cm^?2, and fill factor (FF) of 65%. The FF of the cell is limited by the series resistances in the device, including the top contact, which can be mitigated in the future through device optimization. The highest measured V_OC under 1 sun is 692 mV, which approaches the optically implied V_OC of ≈795 mV extracted from the luminescence yield of p‐InP.     

Engineering Multiphase Metal Halide Perovskites Thin Films for Stable and Efficient Solar Cells

The intrinsic instability of lead halide perovskite semiconductors in an ambient atmosphere is one of the most critical issues that impedes perovskite solar cell commercialization. To overcome it, the use of bulky organic spacers has emerged as a promising solution. The resulting perovskite thin films present complex morphologies, difficult to predict, which can directly affect the device efficiency. Here, by combining in‐depth morphological and spectroscopic characterization, it is shown that both the ionic size and the relative concentration of the organic cation, drive the integration of bulky organic cations into the crystal unit cell and the thin film, inducing different perovskite phases and different vertical distribution, then causing a significant change in the final thin film morphology. Based on these studies, a fine‐engineered perovskite is constructed by employing two different large cations, namely, ethyl ammonium and butyl ammonium. The first one takes part in the 3D perovskite phase formation, the second one works as a surface modifier by forming a passivating layer on top of the thin film. Together they lead to improved photovoltaic performance and device stability when tested in air under continuous illumination. These findings propose a general approach to achieve reliability in perovskite‐based optoelectronic devices.     

Aging Effect of a Cu(In,Ga)(S,Se)2 Absorber on the Photovoltaic Performance of Its Cd‐Free Solar Cell Fabricated by an All‐Dry Process: Its Carrier Recombination Analysis

Cd‐free Cu(In,Ga)(S,Se)₂ (CIGSSe) solar cells are fabricated by an all‐dry process (a Cd‐free and all‐dry process CIGSSe solar cell) with aged CIGSSe thin film absorbers. The aged CIGSSe thin films are kept in a desiccator cabinet under partial pressure of oxygen of ≈200 Pa for aging time up to 10 months. It is reported for the first time that aged CIGSSe thin film with increased aging time results in significant enhancement of photovoltaic performance of Cd‐free and all‐dry process CIGSSe solar cells, regardless of the alkali treatment. Based on carrier recombination analysis, carrier recombination rates at the interface and in the depletion region of the Cd‐free and all‐dry process CIGSSe solar cells are reduced owing to avoidance of sputtering damage on CIGSSe absorber surface, which is consistent with the strong electron beam‐induced current signal near CIGSSe surface after the increased aging time. It is implied that the interface and near‐surface qualities are clearly improved through the increased aging time, which is attributable to the self‐forming of In_x(O,S)_y near CIGSSe surface, which acts as a buffer layer. Ultimately, the 22.0%‐efficient Cd‐free CIGSSe solar cell fabricated by all‐dry process is achieved with the aged Cs‐treated CIGSSe absorber with the aging time of 10 months.     

Quantifying Efficiency Loss of Perovskite Solar Cells by a Modified Detailed Balance Model

A modified detailed balance model is built to understand and quantify efficiency loss of perovskite solar cells. The modified model captures the light‐absorption‐dependent short‐circuit current, contact and transport‐layer‐modified carrier transport, as well as recombination and photon‐recycling‐influenced open‐circuit voltage. The theoretical and experimental results show that for experimentally optimized perovskite solar cells with the power conversion efficiency of 19%, optical loss of 25%, nonradiative recombination loss of 35%, and ohmic loss of 35% are the three dominant loss factors for approaching the 31% efficiency limit of perovskite solar cells. It is also found that the optical loss climbs up to 40% for a thin‐active‐layer design. Moreover, a misconfigured transport layer introduces above 15% of energy loss. Finally, the perovskite‐interface‐induced surface recombination, ohmic loss, and current leakage should be further reduced to upgrade device efficiency and eliminate hysteresis effect. This work contributes to fundamental understanding of device physics of perovskite solar cells. The developed model offers a systematic design and analysis tool to photovoltaic science and technology.     

Heterojunction‐Depleted Lead‐Free Perovskite Solar Cells with Coarse‐Grained B‐γ‐CsSnI3 Thin Films

Perovskite solar cells (PSCs) have been emerging as a breakthrough photovoltaic technology, holding unprecedented promise for low‐cost, high‐efficiency renewable electricity generation. However, potential toxicity associated with the state‐of‐the‐art lead‐containing PSCs has become a major concern. The past research in the development of lead‐free PSCs has met with mixed success. Herein, the promise of coarse‐grained B‐γ‐CsSnI₃ perovskite thin films as light absorber for efficient lead‐free PSCs is demonstrated. Thermally‐driven solid‐state coarsening of B‐γ‐CsSnI₃ perovskite grains employed here is accompanied by an increase of tin‐vacancy concentration in their crystal structure, as supported by first‐principles calculations. The optimal device architecture for the efficient photovoltaic operation of these B‐γ‐CsSnI₃ thin films is identified through exploration of several device architectures. Via modulation of the B‐γ‐CsSnI₃ grain coarsening, together with the use of the optimal PSC architecture, planar heterojunction‐depleted B‐γ‐CsSnI₃ PSCs with power conversion efficiency up to 3.31% are achieved without the use of any additives. The demonstrated strategies provide guidelines and prospects for developing future high‐performance lead‐free PVs.     

Organic Solar Cells: Polythiophene: Perylene Diimide Solar Cells – the Impact of Alkyl‐Substitution on the Photovoltaic Performance (Adv. Energy Mater. 2/2011)

The photovoltaic parameters, i.e., the short‐circuit current, open‐circuit voltage and device fill factor, of bulk heterojunction solar cells that use perylene diimide (PDI) derivatives as electron acceptors are often far below the theoretically expected values for reasons still not entirely understood. This article demonstrates that the photovoltaic characteristics of blend films of regioregular poly(3‐hexylthiophene) (rr‐P3HT) and PDI molecules are improved upon using a core‐alkylated PDI derivative instead of the often used N‐alkylated PDI molecules. A doubling of the power conversion efficiency of P3HT:PDI solar cells by using the core‐alkylated PDI derivative is observed leading to an unprecedented power conversion efficiency of 0.5% for a P3HT:PDI solar cell under AM1.5 solar illumination. Furthermore, the optical properties of the novel PDI derivative are compared to two standard exclusively N‐alkylated PDI derivatives by steady‐state and time‐resolved photoluminescence spectroscopy in solution and solid state. The experiments reveal that aggregation in the solid state determines the photophysics of all PDI derivatives. However, the emission energy and excited state lifetime of the aggregates are clearly influenced by the alkyl‐substitution pattern through its effect on the packing of the PDI molecules. X‐ray diffraction experiments before and after thermal annealing of PDI:polystyrene and PDI:P3HT blends reveal subtle differences in the packing characteristics of the different PDI derivatives and, problematically, that P3HT ordering is suppressed by all of the PDI derivatives.     

Polythiophene:Perylene Diimide Solar Cells – the Impact of Alkyl‐Substitution on the Photovoltaic Performance

The photovoltaic parameters, i.e., the short‐circuit current, open‐circuit voltage and device fill factor, of bulk heterojunction solar cells that use perylene diimide (PDI) derivatives as electron acceptors are often far below the theoretically expected values for reasons still not entirely understood. This article demonstrates that the photovoltaic characteristics of blend films of regioregular poly(3‐hexylthiophene) (rr‐P3HT) and PDI molecules are improved upon using a core‐alkylated PDI derivative instead of the often used N‐alkylated PDI molecules. A doubling of the power conversion efficiency of P3HT:PDI solar cells by using the core‐alkylated PDI derivative is observed leading to an unprecedented power conversion efficiency of 0.5% for a P3HT:PDI solar cell under AM1.5 solar illumination. Furthermore, the optical properties of the novel PDI derivative are compared to two standard exclusively N‐alkylated PDI derivatives by steady‐state and time‐resolved photoluminescence spectroscopy in solution and solid state. The experiments reveal that aggregation in the solid state determines the photophysics of all PDI derivatives. However, the emission energy and excited state lifetime of the aggregates are clearly influenced by the alkyl‐substitution pattern through its effect on the packing of the PDI molecules. X‐ray diffraction experiments before and after thermal annealing of PDI:polystyrene and PDI:P3HT blends reveal subtle differences in the packing characteristics of the different PDI derivatives and, problematically, that P3HT ordering is suppressed by all of the PDI derivatives.     

Efficient Organic Solar Cell with 16.88% Efficiency Enabled by Refined Acceptor Crystallization and Morphology with Improved Charge Transfer and Transport Properties

Single‐layered organic solar cells (OSCs) using nonfullerene acceptors have reached 16% efficiency. Such a breakthrough has inspired new sparks for the development of the next generation of OSC materials. In addition to the optimization of electronic structure, it is important to investigate the essential solid‐state structure that guides the high efficiency of bulk heterojunction blends, which provides insight in understanding how to pair an efficient donor–acceptor mixture and refine film morphology. In this study, a thorough analysis is executed to reveal morphology details, and the results demonstrate that Y6 can form a unique 2D packing with a polymer‐like conjugated backbone oriented normal to the substrate, controlled by the processing solvent and thermal annealing conditions. Such morphology provides improved carrier transport and ultrafast hole and electron transfer, leading to improved device performance, and the best optimized device shows a power conversion efficiency of 16.88% (16.4% certified). This work reveals the importance of film morphology and the mechanism by which it affects device performance. A full set of analytical methods and processing conditions are executed to achieve high efficiency solar cells from materials design to device optimization, which will be useful in future OSC technology development.     

Understanding the Film Formation Kinetics of Sequential Deposited Narrow‐Bandgap Pb–Sn Hybrid Perovskite Films

Developing efficient narrow bandgap Pb–Sn hybrid perovskite solar cells with high Sn‐content is crucial for perovskite‐based tandem devices. Film properties such as crystallinity, morphology, surface roughness, and homogeneity dictate photovoltaic performance. However, compared to Pb‐based analogs, controlling the formation of Sn‐containing perovskite films is much more challenging. A deeper understanding of the growth mechanisms in Pb–Sn hybrid perovskites is needed to improve power conversion efficiencies. Here, in situ optical spectroscopy is performed during sequential deposition of Pb–Sn hybrid perovskite films and combined with ex situ characterization techniques to reveal the temporal evolution of crystallization in Pb–Sn hybrid perovskite films. Using a two‐step deposition method, homogeneous crystallization of mixed Pb–Sn perovskites can be achieved. Solar cells based on the narrow bandgap (1.23 eV) FA_0.66MA_0.34Pb_0.5Sn_0.5I₃ perovskite absorber exhibit the highest efficiency among mixed Pb–Sn perovskites and feature a relatively low dark carrier density compared to Sn‐rich devices. By passivating defect sites on the perovskite surface, the device achieves a power conversion efficiency of 16.1%, which is the highest efficiency reported for sequential solution‐processed narrow bandgap perovskite solar cells with 50% Sn‐content.     

Targeting Ideal Dual‐Absorber Tandem Water Splitting Using Perovskite Photovoltaics and CuInxGa1‐xSe2 Photocathodes

Efficient sunlight‐driven water splitting devices can be achieved by pairing two absorbers of different optimized bandgaps in an optical tandem design. With tunable absorption ranges and cell voltages, organic–inorganic metal halide perovskite solar cells provide new opportunities for tailoring top absorbers for such devices. In this work, semitransparent perovskite solar cells are developed for use as the top cell in tandem with a smaller bandgap photocathode to enable panchromatic harvesting of the solar spectrum. A new CuIn_xGa_1‐xSe₂ multilayer photocathode is designed, exhibiting excellent performance for photoelectrochemical water reduction and representing a near‐ideal bottom absorber. When pairing it below a semitransparent CH₃NH₃PbBr₃‐based solar cell, a solar‐to‐hydrogen efficiency exceeding 6% is achieved, the highest value yet reported for a photovoltaic–photoelectrochemical device utilizing a single‐junction solar cell as the bias source under one sun illumination. The analysis shows that the efficiency can reach more than 20% through further optimization of the perovskite top absorber.     

Melanin–Perovskite Composites for Photothermal Conversion

Biomacromolecular pigments, such as melanin, play an essential role in the survival of all living beings. Melanin absorbs sunlight and transforms it into heat, which is crucial for avoiding damage to skin cells. Light absorption produces excited electrons, which could either fall back to ground states by releasing the heat (photothermal effect) and/or light (photoluminescence), or stay at higher energy levels within its lifetime period, which can be captured through external electronic circuitry (photovoltaic effect). In this study, it is demonstrated that the combination of melanin with halide perovskite light absorber in the form of a composite exhibits high absorbance from the UV to NIR region in the solar spectrum. And the composite displays significantly reduced photoluminescence and minimized density of residual excited states (verified by photovoltaic measurement) owing to the significantly enhanced nonradiant quenching by the melanin. As a result, the composite shows an ultrahigh solar‐thermal quantum yield of 99.56% and solar‐thermal conversion efficiency of ≈81% under one‐sun illumination (AM1.5), which is superior to typical carbon materials such as graphene (≈70%). By coating the photothermal composite film on the hot‐side of thermoelectric devices, a 7000% increase in output power as compared to the blank device under illumination is observed.     

Correlating Structure and Morphology to Device Performance of Molecular Organic Donor–Acceptor Photovoltaic Cells Based on Diindenoperylene (DIP) and C60

The performance of organic photovoltaic cells (OPVCs) shows a critical dependence on morphology and structure of the active layers. In small molecule donor/acceptor (D/A) cells fabrication parameters, like substrate temperature and evaporation rate, play a significant role for crystallization and roughening of the film. In particular, the fraction of mixed material at the interface between donor and acceptor is highly relevant for device performance. While an ideal planar heterojunction (PHJ) exhibits the smallest possible interface area resulting in suppressed recombination losses, mixed layers suffer strongly from recombination but show higher exciton dissociation efficiencies. In this study we investigate PHJ and planar‐mixed heterojunction (PM‐HJ) solar cells based on diindenoperylene (DIP) as donor and C₆₀ as acceptor, fabricated under different growth conditions. Grazing incidence small angle X‐ray scattering (GISAXS), X‐ray reflectometry (XRR) and atomic force microscopy (AFM) are used to obtain detailed information about in‐ and out‐of‐plane structures and topography. In that way we find that surface and bulk domain distances are correlated in size for PHJs, while PM‐HJs show no correlation at all. The resulting solar cell characteristics are strongly affected by the morphology, as reorganizations in structure correlate with changes in the solar cell performance.     

Photovoltaic Device with over 5% Efficiency Based on an n‐Type Ag2ZnSnSe4 Absorber

The kesterite material Cu₂ZnSn(S,Se)₄ (CZTSSe) is an attractive earth‐abundant semiconductor for photovoltaics. However, the power conversion efficiency is limited by a large density of I–II antisite defects, which cause severe band tailing and open‐circuit voltage loss. Ag₂ZnSnSe₄ (AZTSe) is a promising alternative to CZTSSe with a substantially lower I–II antisite defect density and smaller band tailing. AZTSe is weakly n‐type, and this study reports for the first time on how the carrier density is impacted by stoichiometry. This study presents the first‐ever photovoltaic device based on AZTSe, which exhibits an efficiency of 5.2%, which is the highest value reported for an n‐type thin‐film absorber. Due to the weakly n‐type nature of the absorber, a new architecture is employed (SnO:F/AZTSe/MoO₃/ITO) to replace conventional contacts and buffer materials. Using this platform, it is shown that the band tailing parameter in AZTSe more closely resembles that of CIGSe than CZTSSe, underscoring the strong promise of this absorber. In demonstrating the ability to collect photogenerated carriers from AZTSe, this study paves the way for novel thin‐film heterojunction architectures where light absorption in the n‐type device layer can supplement absorption in the p‐type layer as opposed to producing a net optical loss.     

Aerosol‐Jet‐Assisted Thin‐Film Growth of CH3NH3PbI3 Perovskites—A Means to Achieve High Quality,Defect‐Free Films for Efficient Solar Cells

A high level of automation is desirable to facilitate the lab‐to‐fab process transfer of the emerging perovskite‐based solar technology. Here, an automated aerosol‐jet printing technique is introduced for precisely controlling the thin‐film perovskite growth in a planar heterojunction p–i–n solar cell device structure. The roles of some of the user defined parameters from a computer‐aided design file are studied for the reproducible fabrication of pure CH₃NH₃PbI₃ thin films under near ambient conditions. Preliminary power conversion efficiencies up to 15.4% are achieved when such films are incorporated in a poly(3,4‐ethylenedioxythiophene):polystyrene sulfonate‐perovskite‐phenyl‐C71‐butyric acid methyl ester type device format. It is further shown that the deposition of atomized materials in the form of a gaseous mist helps to form a highly uniform and PbI₂ residue‐free CH₃NH₃PbI₃ film and offers advantages over the conventional two‐step solution approach by avoiding the detrimental solid–liquid interface induced perovskite crystallization. Ultimately, by integrating full 3D motion control, the fabrication of perovskite layers directly on a 3D curved surface becomes possible. This work suggests that 3D automation with aerosol‐jet printing, once fully optimized, could form a universal platform for the lab‐to‐fab process transfer of solution‐based perovskite photovoltaics and steer development of new design strategies for numerous embedded structural power applications.     

Hybrid Perovskite‐Organic Flexible Tandem Solar Cell Enabling Highly Efficient Electrocatalysis Overall Water Splitting

Perovskite‐organic tandem solar cells are attracting more attention due to their potential for highly efficient and flexible photovoltaic device. In this work, efficient perovskite‐organic monolithic tandem solar cells integrating the wide bandgap perovskite (1.74 eV) and low bandgap organic active PBDB‐T:SN6IC‐4F (1.30 eV) layer, which serve as the top and bottom subcell, respectively, are developed. The resulting perovskite‐organic tandem solar cells with passivated wide‐bandgap perovskite show a remarkable power conversion efficiency (PCE) of 15.13%, with an open‐circuit voltage (V_oc) of 1.85 V, a short‐circuit photocurrent (J_sc) of 11.52 mA cm^?2, and a fill factor (FF) of 70.98%. Thanks to the advantages of low temperature fabrication processes and the flexibility properties of the device, a flexible tandem solar cell which obtain a PCE of 13.61%, with V_oc of 1.80 V, J_sc of 11.07 mA cm^?2, and FF of 68.31% is fabricated. Moreover, to demonstrate the achieved high V_oc in the tandem solar cells for potential applications, a photovoltaic (PV)‐driven electrolysis system combing the tandem solar cell and water splitting electrocatalysis is assembled. The integrated device demonstrates a solar‐to‐hydrogen efficiency of 12.30% and 11.21% for rigid, and flexible perovskite‐organic tandem solar cell based PV‐driven electrolysis systems, respectively.     

Thin Film Co3O4/TiO2 Heterojunction Solar Cells

Co₃O₄ is investigated as a light absorber for all‐oxide thin‐film photovoltaic cells because of its nearly ideal optical bandgap of around 1.5 eV. Thin film TiO₂/Co₃O₄ heterojunctions are produced by spray pyrolysis of TiO₂ as a window layer, followed by pulsed laser deposition of Co₃O₄ as a light absorbing layer. The photovoltaic performance is investigated as a function of the Co₃O₄ deposition temperature and a direct correlation is found. The deposition temperature seems to affect both the crystallinity and the morphology of the absorber, which affects device performance. A maximum power of 22.7 μW cm^?2 is obtained at the highest deposition temperature (600 °C) with an open circuit photovoltage of 430 mV and a short circuit photocurrent density of 0.2 mA cm^?2. Performing deposition at 600 °C instead of room temperature improves power by an order of magnitude and reduces the tail states (Urbach edge energy). These phenomena can be explained by larger grains that grows at high temperature, as opposed to many nucleation events that occur at lower temperature.