Synthesis and photoluminescence characteristics of Sm3+‐doped Bi4Si3O12 red‐emitting phosphor |
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| Authors: | Gonggong Lu Kehui Qiu Junfeng Li Wentao Zhang Xiqiang Yuan |
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| Affiliation: | 1. Institute of Materials Science and Technology, Chengdu University of Technology, Chengdu, People's Republic of China;2. College of Materials and Chemistry & Chemical Engineering, Chengdu University of Technology, Chengdu, People's Republic of China |
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| Abstract: | A series of novel red‐emitting Sm3+‐doped bismuth silicate phosphors, Bi4Si3O12:xSm3+ (0.01 ≤ x ≤ 0.06), were prepared via the sol–gel route. The phase of the synthesized samples calcinated at 800 °C is isostructural with Bi4Si3O12 according to X‐ray diffraction results. Under excitation with 405 nm light, some typical peaks of Sm3+ ions centered at 566, 609, 655 and 715 nm are found in the emission spectra of the Sm3+‐doped Bi4Si3O12 phosphors. The strongest peak located at 609 nm is due to 4G5/2–6H7/2 transition of Sm3+. The luminescence intensity reaches its maximum value when the Sm3+ ion content is 4 mol%. The results suggest that Bi4Si3O12:Sm3+ may be a potential red phosphor for white light‐emitting diodes. Copyright © 2016 John Wiley & Sons, Ltd. |
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| Keywords: | red‐emitting phosphors Bi4Si3O12:Sm3+ luminescence properties concentration quenching white LEDs |
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